Universal Approach for Predicting Crystallography of Heterogeneous Epitaxial Nanocrystals with Multiple Orientation Relationships

Phases and Interfaces in the Cr–Fe–Si Ternary System: X-ray Diffraction and Electron Microscopy Study

The ternary Cr-Fe-Si system was investigated with X-ray diffraction, energy dispersive X-ray spectrometry, scanning and transmission electron microscopy, and electron diffraction. Samples melted at 1723 K were examined right after cooling or after annealing at 1073 K for 3 days to determine phases, grain sizes, and interphase interfaces. During annealing, a polymorphic transformation of the tetragonal α-FeSi2 to the orthorhombic β-FeSi2 phase occurs, while CrSi2 retains its hexagonal structure at high-temperature treatment. Thin layers of ε-FeSi with a cubic structure were observed and identified within the CrSi2 grains. Crystallographic orientation relationships are determined at the interphase interfaces. The contributions of lattice mismatch and thermal expansion coefficient misfit to deformation are discussed.

On the growth morphology and crystallography of the epitaxial Cu7Te4/CdTe interface

The manipulation of interface structures in the epitaxial growth of thin films is very essential, especially for some special heterogeneous structures. Crystallographic calculation method is a powerful tool when analyzing and predicting the structures of the coherent interfaces.