Control of Multilevel Resistance in Vanadium Dioxide by Electric Field Using Hybrid Dielectrics

Reversible Entropy-Driven Defect Migration and Insulator-Metal Transition Suppression in VO2 Nanostructures for Phase-Change Electronic Switching

Oxygen defects are among essential issues and required to be manipulated in correlated electronic oxides with insulator-metal transition (IMT). Besides, surface and interface control are necessary but challenging in field-induced electronic switching towards advanced IMT-triggered transistors and optical modulators. Herein, we demonstrated reversible entropy-driven oxygen defect migrations and reversible IMT suppression in vanadium dioxide (VO₂ ) phase-change electronic switching. The initial IMT was suppressed with oxygen defects, which is caused by the entropy change during reversed surface oxygen ionosorption on the VO₂ nanostructures. This IMT suppression is reversible and reverts when the adsorbed oxygen extracts electrons from the surface and heals defects again. The reversible IMT suppression observed in the VO₂ nanobeam with M2 phase is accompanied by large variations in the IMT temperature. We also achieved irreversible and stable IMT by exploiting an Al₂ O₃ partition layer prepared by atomic layer deposition (ALD) to disrupt the entropy-driven defect migration. We expected that such reversible modulations would be helpful for understanding the origin of surface-driven IMT in correlated vanadium oxides, and constructing functional phase-change electronic and optical devices.

Recent Progress on Vanadium Dioxide Nanostructures and Devices: Fabrication, Properties, Applications and Perspectives

Vanadium dioxide (VO₂) is a typical metal-insulator transition (MIT) material, which changes from room-temperature monoclinic insulating phase to high-temperature rutile metallic phase. The phase transition of VO₂ is accompanied by sudden changes in conductance and optical transmittance. Due to the excellent phase transition characteristics of VO₂, it has been widely studied in the applications of electric and optical devices, smart windows, sensors, actuators, etc. In this review, we provide a summary about several phases of VO₂ and their corresponding structural features, the typical fabrication methods of VO₂ nanostructures (e.g., thin film and low-dimensional structures (LDSs)) and the properties and related applications of VO₂. In addition, the challenges and opportunities for VO₂ in future studies and applications are also discussed.

Influence of micro-structure on modulation properties in VO2 composite terahertz memory metamaterials

We have grown VO₂ films and combined with terahertz metamaterials to manipulate the memory effect during the insulator-to-metal transition. The temperature-dependent resonant frequency of hybrid structure shows a thermal hysteresis accompanied with frequency shift and bandwidth variation due to the presence of a VO₂ dielectric layer. This frequency memory effect significantly depends on the metallic micro-structure. Further theoretical calculation demonstrates this phenomenon mainly originates from the different coupling strength between VO₂ and metallic structures. Our findings could facilitate the application of VO₂ films in the smart window and dynamical terahertz modulators.

Nonvolatile ferroelectric field effect transistor based on a vanadium dioxide nanowire with large on- and off-field resistance switching

We fabricate a ferroelectric field effect transistor (FeFET) based on a semiconducting vanadium dioxide (VO₂) nanowire (NW), and we investigate its electron transport characteristics modulated by the ferroelectric effects.