Domain Evolution and Piezoelectric Response across Thermotropic Phase Boundary in (K,Na)NbO3-Based Epitaxial Thin Films

Structure, Properties, Preparation, and Application of Layered Titanates

As a typical cation-exchangeable layered compound, layered titanate has a unique open layered structure. Its excellent physical and chemical properties allow its wide use in the energy, environmental protection, electronics, biology, and other fields. This paper reviews the recent progress in the research on the structure, synthesis, properties, and application of layered titanates. Various reactivities, as well as the advantages and disadvantages, of different synthetic methods are discussed. The reaction mechanism and influencing factors of the ion exchange reaction, intercalation reaction, and exfoliation reaction are analyzed. The latest research progress on layered titanates and their modified products in the fields of photocatalysis, adsorption, electrochemistry, and other applications is summarized. Finally, the future development of layered titanate and its exfoliated product two-dimensional nanosheets is proposed.

A van der Waals Ferroelectric Tunnel Junction for Ultrahigh-Temperature Operation Memory

Facing the constant scaling down and thus increasingly severe self-heating effect, developing ultrathin and heat-insensitive ferroelectric devices is essential for future electronics. However, conventional ultrathin ferroelectrics and most 2D ferroelectric materials (2DFMs) are not suitable for high-temperature operation due to their low Curie temperature. Here, by using few-layer α-In₂ Se₃ , a special 2DFM with high Curie temperature, van der Waals (vdW) ferroelectric tunnel junction (FTJ) memories that deliver outstanding and reliable performance at both room and high temperatures are constructed. The vdW FTJs offer a large on/off ratio of 10⁴ at room temperature and still reveal excellent on/off ratio at an ultrahigh temperature of 470 K, which will fail down other 2DFMs. Moreover, long retention and reliable cyclic endurance at high temperature are achieved, showing robust thermal stability of the vdW FTJ memory. The observations of this work demonstrate an exciting promise of α-In₂ Se₃ for reliable service in high temperature either from self-heating or harsh environments.

All-Inorganic Flexible (K, Na)NbO3-Based Lead-Free Piezoelectric Thin Films Spin-Coated on Metallic Foils

Flexible piezoelectric thin films are raising interest in energy harvesting and wearable electronics, although their direct fabrication is challenging in the selection of substrates and thermal processing. In this work, we developed direct fabrication of flexible lead-free (K, Na)NbO₃ (KNN)-based piezoelectric films on commercially available metallic foils by sol-gel processing. Stainless steel and platinum foils are selected as flexible substrates because of their good thermal stability, robust flexibility, and cost-efficiency. The sol-gel-processed KNN-based thin films on both of the metallic foils show good flexibility, with the bending radii reaching ±3 mm. The flexible thin films grown on stainless steel and platinum foils present high breakdown electric fields that reach 1760 and 2530 kV/cm, respectively, resulting from the fine-grained dense structure, limited leakage current density, and suppressed mobility of charged carriers. Improved effective piezoelectric coefficient d_33, eff* (75.4 pm/V) with a slight decrease after bending was obtained in the flexible thin films on Pt when compared to their rigid counterparts. The flexible lead-free piezoelectric thin films with combined high breakdown electric fields and piezoelectric and energy storage properties may pave the way for integrating KNN-based multifunctional thin films into flexible electronics.

Nanointerfacial Layer Effect on Dielectric and Piezoelectric Responses in Chemical Solution-Derived Lead-Free Alkaline Niobate-Based Thin Films

Since nonpiezoelectric interfacial layers even at the nanoscale significantly affect the performance of lead-free piezoelectric thin films, the quantitative characterization of property changes of thin films due to interfacial layers is of great importance and should be precisely undertaken for piezoelectric microelectromechanical system (MEMS) and nanoelectromechanical system (NEMS) devices. In contrast to widely accepted concepts for interfacial layer thickness estimation based on the existing series capacitor model, we find that the interfacial layer thickness at the top and the bottom interfaces is clearly different in chemical solution deposition (CSD)-derived (K_0.5,Na_0.5)(Mn_0.005,Nb_0.995)O₃ (KNMN) thin films. Interestingly, the thickness of the bottom interface increases linearly with increasing thin-film thickness, while the thickness of the top interface is constant regardless of the thin-film thickness. In this work, nanointerfacial layer effects of CSD-derived KNMN thin films are theoretically and experimentally addressed in a combinatorial way using a modified series capacitor model. The obtained information is used to envisage the origins and the mechanisms of nonpiezoelectric interfacial layers and associated dielectric and ferroelectric properties of KNMN thin films. Our research connects macroscopic properties with microscopic origins and is greatly facilitated by separating intrinsic and extrinsic contributions to phenomenological behaviors, as well as engineering interface-related properties of the films. We believe these studies to be crucial for the further development and applications of KNN-based lead-free piezoelectric devices, which also open the door to future studies on other lead-free piezoelectric material systems for practical MEMS and NEMS applications.

Sizing up (K1−xNax)NbO3 films: a review of synthesis routes, properties & applications

This review discusses (K,Na)NbO₃ thin films, with a focus on synthesis, chemically modifying properties, plus piezoelectric and biomedical KNN devices.

Large-scale multiferroic complex oxide epitaxy with magnetically switched polarization enabled by solution processing

Complex oxides with tunable structures have many fascinating properties, though high-quality complex oxide epitaxy with precisely controlled composition is still out of reach. Here we have successfully developed solution-based single-crystalline epitaxy for multiferroic (1-x)BiTi(1-y)/2Fe y Mg(1-y)/2O3-(x)CaTiO3 (BTFM-CTO) solid solution in large area, confirming its ferroelectricity at the atomic scale with strong spontaneous polarization. Careful compositional tuning leads to a bulk magnetization of 0.07 ± 0.035 μB/Fe at room temperature, enabling magnetically induced polarization switching exhibiting a large magnetoelectric coefficient of 2.7-3.0 × 10-7 s/m. This work demonstrates the great potential of solution processing in large-scale complex oxide epitaxy and establishes novel room-temperature magnetoelectric coupling in epitaxial BTFM-CTO film, making it possible to explore a much wider space of composition, phase, and structure that can be easily scaled up for industrial applications.

Effect of Solution Conditions on the Properties of Sol-Gel Derived Potassium Sodium Niobate Thin Films on Platinized Sapphire Substrates

If piezoelectric micro-devices based on K_0.5Na_0.5NbO₃ (KNN) thin films are to achieve commercialization, it is critical to optimize the films’ performance using low-cost scalable processing conditions. Here, sol–gel derived KNN thin films are deposited using 0.2 and 0.4 M precursor solutions with 5% solely potassium excess and 20% alkali (both potassium and sodium) excess on platinized sapphire substrates with reduced thermal expansion mismatch in relation to KNN. Being then rapid thermal annealed at 750 °C for 5 min, the films revealed an identical thickness of ~340 nm but different properties. An average grain size of ~100 nm and nearly stoichiometric KNN films are obtained when using 5% potassium excess solution, while 20% alkali excess solutions give the grain size of 500–600 nm and (Na + K)/Nb ratio of 1.07–1.08 in the prepared films. Moreover, the 5% potassium excess solution films have a perovskite structure without clear preferential orientation, whereas a (100) texture appears for 20% alkali excess solutions, being particularly strong for the 0.4 M solution concentration. As a result of the grain size and (100) texturing competition, the highest room-temperature dielectric permittivity and lowest dissipation factor measured in the parallel-plate-capacitor geometry were obtained for KNN films using 0.2 M precursor solutions with 20% alkali excess. These films were also shown to possess more quadratic-like and less coercive local piezoelectric loops, compared to those from 5% potassium excess solution. Furthermore, KNN films with large (100)-textured grains prepared from 0.4 M precursor solution with 20% alkali excess were found to possess superior local piezoresponse attributed to multiscale domain microstructures.

Controlling Phase Purity and Texture of K0.5Na0.5NbO3 Thin Films by Aqueous Chemical Solution Deposition

Aqueous chemical solution deposition (CSD) of lead-free ferroelectric K0.5Na0.5NbO3 (KNN) thin films has a great potential for cost-effective and environmentally friendly components in microelectronics. Phase purity of KNN is, however, a persistent challenge due to the volatility of alkali metal oxides, usually countered by using excess alkali metals in the precursor solutions. Here, we report on the development of two different aqueous precursor solutions for CSD of KNN films, and we demonstrate that the decomposition process during thermal processing of the films is of detrimental importance for promoting nucleation of KNN and suppressing the formation of secondary phases. Based on thermal analysis, X-ray diffraction and IR spectroscopy of films as well as powders prepared from the solutions, it was revealed that the decomposition temperature can be controlled by chemistry resulting in phase pure KNN films. A columnar microstructure with out-of-plane texturing was observed in the phase pure KNN films, demonstrating that the microstructure is directly coupled to the thermal processing of the films.

Epitaxial K0.5Na0.5NbO3 thin films by aqueous chemical solution deposition

We report on an environmentally friendly and versatile aqueous chemical solution deposition route to epitaxial K0.5Na0.5NbO3 (KNN) thin films. The route is based on the spin coating of an aqueous solution of soluble precursors on SrTiO3 single crystal substrates followed by pyrolysis at 400°C and annealing at 800°C using rapid thermal processing. Strongly textured films with homogeneous thickness were obtained on three different crystallographic orientations of SrTiO3. Epitaxial films were obtained on (111) SrTiO3 substrates, while films consisting of an epitaxial layer close to the substrate followed by an oriented polycrystalline layer were obtained on (100) and (110) SrTiO3 substrates. A K2Nb4O11 secondary phase was observed on the surface of the thin films due to the evaporation of alkali species, while the use of an NaCl/KCl flux reduced the amount of the secondary phase. Ferroelectric behaviour of the films was investigated by PFM, and almost no dependence on the film crystallographic orientation was observed. The permittivity and loss tangent of the films with the NaCl/KCl flux were 870 and 0.04 (100-orientation) and 2250 and 0.025 (110-orientation), respectively, at 1 kHz.

Structure and piezo-ferroelectricity relationship study of (K0.5Na0.5)0.985La0.005NbO3 epitaxial films deposited on SrTiO3 by sputtering

This work demonstrates that the rf-sputtering technique, combined with appropriate heat treatments, is potentially effective to develop new materials and devices based on oxide-interface and strain engineering. We report a study of the structural-physical properties relationship of high crystalline quality, highly oriented and epitaxial thin films of the lead-free (K_0.5Na_0.5)_0.985La_0.005NbO₃ (KNNLa) compound which were successfully deposited on Nb-doped SrTiO₃ substrates, with orientations [100] (NSTO100) and [110] (NSTO110). The crystalline growth and the local ferroelectric and piezoelectric properties were evaluated by piezoresponse force microscopy combined with transmission electron microscopy and texture analysis by X-ray diffraction. Conditioned by the STO surface parameters, in the KNNLa films on NSTO100 coexist a commensurate [001]-tetragonal phase and two incommensurate [010]-monoclinic phases; while on NSTO110 the KNNLa films grew only in an incommensurate [101]-monoclinic phase. Both samples show excellent out-of-plane polarization switching patterns consistent with 180° domains walls; while for KNNLa/NSTO100 ferroelectric domains grow with the polarization pointing down, for KNNLa/NSTO110 they prefer to grow with the polarization pointing up. Comparing with previous reports on epitaxial KNN films, we find our samples to be of very high quality regarding their crystalline growth with highly ordered ferroelectric domains arrangements and, consequently, great potential for domain engineering.