Ultralow-Temperature Solution-Processed Aluminum Oxide Dielectrics via Local Structure Control of Nanoclusters

Observation of alumina nanoparticles generated from aqueous solutions of a "flat" aluminum-13 cluster

Amorphous alumina nanoparticles were synthesized via dynamic processes during the dissolution of aluminum hydroxide by nitric acid, a method commonly used to produce aqueous solutions of aluminum oxide molecular clusters. These particles were characterized by DLS measurements, and corroborated by other solution and solid state analyses. The methods used represent a highly tuneable, facile synthetic pathway that allows for size targeting and scalability for industrial purposes, and provides insight into pH- and temperature-dependent alumina speciation and aggregation.

Breaking the Trade-Off Between Polymer Dielectric Constant and Loss via Aluminum Oxo Macrocycle Dopants for High-Performance Neuromorphic Electronics

The dielectric layer is crucial in regulating the overall performance of field-effect transistors (FETs), the key component in central processing units, sensors, and displays. Despite considerable efforts being devoted to developing high-permittivity (k) dielectrics, limited progress is made due to the inherent trade-off between dielectric constant and loss. Here, a solution is presented by designing a monodispersed disk-shaped Ce-Al-O-macrocycle as a dopant in polymer dielectrics. The molecule features a central Ce(III) core connected with eight Al atoms through sixteen bridging hydroxyls and eight 3-aminophenyl peripheries. The incorporation of this macrocycle in polymer dielectrics results in an up to sevenfold increase in dielectric constants and up to 89% reduction in dielectric loss at low frequencies. Moreover, the leakage-current densities decrease, and the breakdown strengths are improved by 63%. Relying on the above merits, FETs bearing cluster-doped polymer dielectrics give near three-orders source-drain current increments while maintaining low-level leakage/off currents, resulting in much higher charge-carrier mobilities (up to 2.45 cm2  V-1  s-1 ) and on/off ratios. This cluster-doping strategy is generalizable and shows great promise for ultralow-power photoelectric synapses and neuromorphic retinas. This work successfully breaks the trade-off between dielectric constant and loss and offers a unique design for polymer composite dielectrics.

A scalable, eco-friendly ultralow-temperature approach to forming Al2O3 water-repellent cotton coatings via UV photo-annealing

Hydrophobic coatings on cotton fabrics were successfully prepared via solution deposition of a “flat” nanoscale aluminum hydroxo cluster and a photo-assisted anneal using ultraviolet light. The coatings have a low...

Effect of alkali atom doping on the electronic structure and aromatic character of planar and quasi-planar Al13+ clusters

A set of three Al₁₃⁺ clusters, one perfectly planar, and two quasi-planar structures, have been recently reported by our group (Guin et al. Journal of Molecular Graphics and Modeling, 2020, 97, 107544). All three clusters possess bilateral symmetry with identical structural features-a set of ten aluminum atoms encircle a triangular core. The symmetry axis passes through one of the Al atoms of the central triangular core and two Al atoms located on the periphery at two opposite ends of the cluster. This set of three aluminum clusters is an example of a rare metallo-aromatic system where highly anti-aromatic islands are embedded within an aromatic sea. In the present study, we have explored the effect of doping alkali atoms (Li, Na, and K) at the positions of the Al atoms that lie on the symmetry axis of the cluster intending to understand the structural stability and the effect on the aromatic character as compared to the undoped parent clusters. Besides the electronic structural analysis, NICS and ELF studies have also been carried out to characterize the aromatic nature of the doped clusters. Interestingly, it has been found that even with the incorporation of the alkali atoms, the bilateral symmetry of the clusters remains intact, but the alkali atoms are pushed out of the original location toward the edge of the cluster, whereas the aluminum atoms remain grouped. The dipole moment of the clusters systematically increases, and the overall aromaticity of the cluster systematically decreases with the increase in the atomic number of the doped alkali atoms. Effect of alkali atom doping to Al₁₃⁺ cluster.

Solution synthesis and dielectric properties of alumina thin films: understanding the role of the organic additive in film formation

Alumina thin films are synthesized by combustion synthesis of mixtures of aluminium nitrate (ALN) and methylcarbazate (MCZ). The interdependence of the ratio of oxidizer and reducing agent on composition, microstructure and electronic properties of the resulting oxide layers is investigated. The dielectric and insulating behaviour is improved by addition of different amounts of MCZ (MCZ : ALN = 0.67 or 2.5). In this way films (thickness ∼140 nm) with a dielectric constant κ of 9.7 and a dielectric loss tan δ below 0.015 can be achieved. Medium concentrations of MCZ (MCZ : ALN = 1.0 or 1.5) lead to films with lower performance, though. Our studies indicate two opposing effects of the organic additive. Removal of organic residues during film formation as combustion gases is potentially detrimental. Larger amounts of MCZ, however, cause condensation reactions in the precusor mixture, which improve the microstructure. The porosity of the films can be sucessfully analyzed by positron annihilation liftetime studies. In this way the impact of the organic ligand sphere on the resulting microstructure can be quantified. Samples prepared from ALN alone exhibit mesopores and also larger micropores. In contrast, the formation of mesopores can be inhibited by addition of MCZ.

Investigation of the physical, optical, and chemical properties of phase segregated AlCoOx thin films from a novel hexol-type cluster

The use of a novel inorganic nanoscale cluster (Al[(μ-OH)₂Co(NH₃)₄]₃(NO₃)₆) was investigated for its utility as a precursor for AlCoOx films. Mixed-metal aluminum and cobalt oxide thin films were solution deposited from the novel cluster solution via the spin-coating method on Si (100) and quartz substrates. The films were annealed at increasing temperatures up to 800 °C, and characterization of these films via TEM and XRD confirms binary Co₃O₄ crystalline phase present in an amorphous Al₂O₃ network. Films are relatively smooth (R_rms < 4 nm), polycrystalline, and demonstrate a tunable optical response dominated by Co₃O₄ with two electronic transitions.

Nanocluster-Based Ultralow-Temperature Driven Oxide Gate Dielectrics for High-Performance Organic Electronic Devices

The development of novel dielectric materials with reliable dielectric properties and low-temperature processibility is crucial to manufacturing flexible and high-performance organic thin-film transistors (OTFTs) for next-generation roll-to-roll organic electronics. Here, we investigate the solution-based fabrication of high-k aluminum oxide (Al₂O₃) thin films for high-performance OTFTs. Nanocluster-based Al₂O₃ films fabricated by highly energetic photochemical activation, which allows low-temperature processing, are compared to the conventional nitrate-based Al₂O₃ films. A wide array of spectroscopic and surface analyses show that ultralow-temperature photochemical activation (<60 °C) induces the decomposition of chemical impurities and causes the densification of the metal-oxide film, resulting in a highly dense high-k Al₂O₃ dielectric layer from Al-13 nanocluster-based solutions. The fabricated nanocluster-based Al₂O₃ films exhibit a low leakage current density (<10⁻⁷ A/cm²) at 2 MV/cm and high dielectric breakdown strength (>6 MV/cm). Using this dielectric layer, precisely aligned microrod-shaped 2,7-dioctyl[1]benzothieno [3,2-b][1] benzothiophene (C8-BTBT) single-crystal OTFTs were fabricated via solvent vapor annealing and photochemical patterning of the sacrificial layer.

Light response behaviors of amorphous In–Ga–Zn–O thin-film transistors via in situ interfacial hydrogen doping modulation

Thin-film transistors (TFTs) based on amorphous In–Ga–Zn–O (a-IGZO) channels present high mobility, large-area uniformity, mechanical flexibility and photosensitivity, and thus have extensive applicability in photodetectors, wearable devices, etc. However, pure a-IGZO based photosensors only exhibit a UV light response with limited sensitivity performance. By utilizing in situ interfacial hydrogen doping, it is demonstrated that the a-IGZO TFTs with the Al₂O₃ dielectric deposited by plasma-enhanced atomic layer deposition at room temperature (RT) have excellent photosensing performance, such as a photoresponsivity of over 6 × 10⁵ A W⁻¹ and a light to dark current ratio up to 10⁷. This is attributed to spontaneous interfacial hydrogen doping into the a-IGZO channel during sputtering deposition of a-IGZO on hydrogen-rich Al₂O₃ films, thus generating subgap states in the band gap of IGZO. Further, color pattern imaging was achieved by employing an array of the color distinguishable devices, and flexibility was demonstrated by fabricating the TFTs onto polymer substrates. Moreover, it is also found that both the RT and 150 °C Al₂O₃ a-IGZO TFTs exhibit typical light-stimulated synaptic behaviors, including excitatory post-synaptic current and pair-pules facilitation, etc., and the memory time of the synaptic devices can be easily modulated by the degree of the interfacial hydrogen doping.

Thin-film transistors (TFTs) based on amorphous In–Ga–Zn–O (a-IGZO) channels present high mobility, large-area uniformity, mechanical flexibility and photosensitivity, and thus have extensive applicability in photodetectors, wearable devices, etc.

High-Performance a-InGaZnO Thin-Film Transistors with Extremely Low Thermal Budget by Using a Hydrogen-Rich Al2O3 Dielectric

Electrical characteristics of amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) are compared by using O2 plasma-enhanced atomic layer deposition Al2O3 dielectrics at different temperatures. High-performance a-IGZO TFTs are demonstrated successfully with an Al2O3 dielectric deposited at room temperature, which exhibit a high field-effect mobility of 19.5 cm2 V- 1 s- 1, a small subthreshold swing of 160 mV/dec, a low threshold voltage of 0.1 V, a large on/off current ratio of 4.5 × 108, and superior negative and positive gate bias stabilities. This is attributed to the hydrogen-rich Al2O3 dielectric deposited at room temperature in comparison with higher deposition temperatures, thus efficiently passivating the interfacial states of a-IGZO/Al2O3 and the oxygen vacancies and improving conductivity of the a-IGZO channel by generating additional electrons because of enhanced hydrogen doping during sputtering of IGZO. Such an extremely low thermal budget for high-performance a-IGZO TFTs is very attractive for flexible electronic application.

Recent Advances of Solution-Processed Metal Oxide Thin-Film Transistors

Solution-processed metal oxide thin-film transistors (TFTs) are considered as one of the most promising transistor technologies for future large-area flexible electronics. This work surveys the recent advances in solution-processed metal oxide TFTs, including n-type oxide semiconductors, oxide dielectrics, and p-type oxide semiconductors. We first deliver a review on the history and present status of metal oxide TFTs. Then, we present the recent progress in solution-processed n-type oxide semiconductors, with a special focus on low-temperature and large-area solution-based approaches as well as emerging nondisplay applications. Next, we give a detailed analysis of the state-of-the-art solution-processed oxide dielectrics for low-power electronics. We further discuss the recent advances in solution-based p-type oxide semiconductors, which will enable the highly desirable future low-cost large-area complementary circuits. Finally, we draw conclusions and outline the perspectives over the research field.

Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor

A room-temperature flexible amorphous indium-gallium-zinc oxide thin film transistor (a-IGZO TFT) technology is developed on plastic substrates, in which both the gate dielectric and passivation layers of the TFTs are formed by an anodic oxidation (anodization) technique. While the gate dielectric Al₂O₃ is grown with a conventional anodization on an Al:Nd gate electrode, the channel passivation layer Al₂O₃ is formed using a localized anodization technique. The anodized Al₂O₃ passivation layer shows a superior passivation effect to that of PECVD SiO₂. The room-temperature-processed flexible a-IGZO TFT exhibits a field-effect mobility of 7.5 cm²/V·s, a subthreshold swing of 0.44 V/dec, an on-off ratio of 3.1 × 10⁸, and an acceptable gate-bias stability with threshold voltage shifts of 2.65 and -1.09 V under positive gate-bias stress and negative gate-bias stress, respectively. Bending and fatigue tests confirm that the flexible a-IGZO TFT also has a good mechanical reliability, with electrical performances remaining consistent up to a strain of 0.76% as well as after 1200 cycles of fatigue testing.

Solution Processed Metal Oxide High-κ Dielectrics for Emerging Transistors and Circuits

The electronic functionalities of metal oxides comprise conductors, semiconductors, and insulators. Metal oxides have attracted great interest for construction of large-area electronics, particularly thin-film transistors (TFTs), for their high optical transparency, excellent chemical and thermal stability, and mechanical tolerance. High-permittivity (κ) oxide dielectrics are a key component for achieving low-voltage and high-performance TFTs. With the expanding integration of complementary metal oxide semiconductor transistors, the replacement of SiO2 with high-κ oxide dielectrics has become urgently required, because their provided thicker layers suppress quantum mechanical tunneling. Toward low-cost devices, tremendous efforts have been devoted to vacuum-free, solution processable fabrication, such as spin coating, spray pyrolysis, and printing techniques. This review focuses on recent progress in solution processed high-κ oxide dielectrics and their applications to emerging TFTs. First, the history, basics, theories, and leakage current mechanisms of high-κ oxide dielectrics are presented, and the underlying mechanism for mobility enhancement over conventional SiO2 is outlined. Recent achievements of solution-processed high-κ oxide materials and their applications in TFTs are summarized and traditional coating methods and emerging printing techniques are introduced. Finally, low temperature approaches, e.g., ecofriendly water-induced, self-combustion reaction, and energy-assisted post treatments, for the realization of flexible electronics and circuits are discussed.