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Luo X, Liu Y, Zheng T, Huang L, Zheng Z, Huang J, Lan Z, Zhao L, Ma J, Huo N, Yan Y, Berencén Y, Gao W, Li J. Two-Dimensional SnSe 2(1-x)S 2x/MoTe 2 Antiambipolar Transistors with Composition Modulation for Multivalued Inverters. ACS APPLIED MATERIALS & INTERFACES 2024; 16:42491-42501. [PMID: 39099453 DOI: 10.1021/acsami.4c08740] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/06/2024]
Abstract
Two-dimensional (2D) van der Waals heterostructures that embody the electronic characteristics of each constituent material have found extensive applications. Alloy engineering further enables the modulation of the electronic properties in these structures. Consequently, we envisage the construction and modulation of composition-dependent antiambipolar transistors (AATs) using van der Waals heterostructures and alloy engineering to advance multivalued inverters. In this work, we calculate the electron structures of SnSe2(1-x)S2x alloys and determine the energy band alignment between SnSe2(1-x)S2x and 2H-MoTe2. We present a series of vertical AATs based on the SnSe2(1-x)S2x/MoTe2 type-III van der Waals heterostructure. These transistors exhibit composition-dependent antiambipolar characteristics through the van der Waals heterostructure, except for the SnSe2/MoTe2 transistor. The peak current (Ipeak) decreases from 43 nA (x = 0.25) to 0.8 nA (x = 1) at Vds = -2 V, while the peak-to-valley current ratio (PVR) increases from 4.5 (x = 0.25) to 6.7 × 103 (x = 1) with a work window ranging from 30 to 47 V. Ultimately, we successfully apply several specific SnSe2(1-x)S2x/MoTe2 devices in binary and ternary logic inverters. Our results underscore the efficacy of alloy engineering in modulating the characteristics of AATs, offering a promising strategy for the development of multivalued logic devices.
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Affiliation(s)
- Xin Luo
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan 528225, P.R. China
| | - Yongsi Liu
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Tao Zheng
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan 528225, P.R. China
| | - Le Huang
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Zhaoqiang Zheng
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Jianming Huang
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan 528225, P.R. China
| | - Zhibin Lan
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan 528225, P.R. China
| | - Lei Zhao
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan 528225, P.R. China
| | - Jingyi Ma
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan 528225, P.R. China
| | - Nengjie Huo
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan 528225, P.R. China
| | - Yong Yan
- School of Microelectronics, University of Science and Technology of China, Hefei 230029, P. R. China
| | - Yonder Berencén
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany
| | - Wei Gao
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan 528225, P.R. China
| | - Jingbo Li
- College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, China
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Meng Y, Wang W, Wang W, Li B, Zhang Y, Ho J. Anti-Ambipolar Heterojunctions: Materials, Devices, and Circuits. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2306290. [PMID: 37580311 DOI: 10.1002/adma.202306290] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/29/2023] [Revised: 07/31/2023] [Indexed: 08/16/2023]
Abstract
Anti-ambipolar heterojunctions are vital in constructing high-frequency oscillators, fast switches, and multivalued logic (MVL) devices, which hold promising potential for next-generation integrated circuit chips and telecommunication technologies. Thanks to the strategic material design and device integration, anti-ambipolar heterojunctions have demonstrated unparalleled device and circuit performance that surpasses other semiconducting material systems. This review aims to provide a comprehensive summary of the achievements in the field of anti-ambipolar heterojunctions. First, the fundamental operating mechanisms of anti-ambipolar devices are discussed. After that, potential materials used in anti-ambipolar devices are discussed with particular attention to 2D-based, 1D-based, and organic-based heterojunctions. Next, the primary device applications employing anti-ambipolar heterojunctions, including anti-ambipolar transistors (AATs), photodetectors, frequency doublers, and synaptic devices, are summarized. Furthermore, alongside the advancements in individual devices, the practical integration of these devices at the circuit level, including topics such as MVL circuits, complex logic gates, and spiking neuron circuits, is also discussed. Lastly, the present key challenges and future research directions concerning anti-ambipolar heterojunctions and their applications are also emphasized.
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Affiliation(s)
- You Meng
- Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Weijun Wang
- Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Wei Wang
- Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Bowen Li
- Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Yuxuan Zhang
- Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Johnny Ho
- Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
- Institute for Materials Chemistry and Engineering, Kyushu University, Fukuoka, 816-8580, Japan
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Xing R, Li Z, Zhao W, Wang D, Xie R, Chen Y, Wu L, Fang X. Waterproof and Flexible Perovskite Photodetector Enabled By P-type Organic Molecular Rubrene with High Moisture and Mechanical Stability. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2310248. [PMID: 38118456 DOI: 10.1002/adma.202310248] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/03/2023] [Revised: 12/16/2023] [Indexed: 12/22/2023]
Abstract
Metal halide perovskite films have gained significant attention because of their remarkable optoelectronic performances. However, their poor stability upon the severe environment appears to be one of the main facets that impedes their further commercial applications. Herein, a method to improve the stability of flexible photodetectors under water and humidity environment without encapsulation is reported. The devices are fabricated using the physical vapor deposition method (Pulse Laser Deposition & Thermal Evaporation) under high-vacuum conditions. An amorphous organic Rubrene film with low molecular polarity and high elastic modulus serves as both a protective layer and hole transport layer. After immersed in water for 6000 min, the photoluminescence intensity attenuation of films only decreased by a maximum of 10%. The demonstrator device, based on Rubrene/CsPbBr3 /ZnO heterojunction confirms that the strategy not only enhances device moisture and mechanical stability but also achieves high sensitivity in optoelectronic detection. In self-powered mode, it has a fast response time of 79.4 µs /207.6 µs and a responsivity 124 mA W-1 . Additionally, the absence of encapsulation simplifies the fabrication of complex electrodes, making it suitable for various applications. This study highlights the potential use of amorphous organic films in improving the stability of perovskite-based flexible devices.
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Affiliation(s)
- Ruofei Xing
- Department of Materials Science and State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200433, P. R. China
| | - Ziqing Li
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, P. R. China
| | - Wenxiao Zhao
- School of Physics, and State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Dong Wang
- School of Physics, and State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Ranran Xie
- School of Physics, and State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Yanxue Chen
- School of Physics, and State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Limin Wu
- Department of Materials Science and State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200433, P. R. China
- College of Chemistry and Chemical Engineering Inner Mongolia University, Hohhot, 010021, P. R. China
| | - Xiaosheng Fang
- Department of Materials Science and State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200433, P. R. China
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, P. R. China
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Obaidulla SM, Supina A, Kamal S, Khan Y, Kralj M. van der Waals 2D transition metal dichalcogenide/organic hybridized heterostructures: recent breakthroughs and emerging prospects of the device. NANOSCALE HORIZONS 2023; 9:44-92. [PMID: 37902087 DOI: 10.1039/d3nh00310h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/31/2023]
Abstract
The near-atomic thickness and organic molecular systems, including organic semiconductors and polymer-enabled hybrid heterostructures, of two-dimensional transition metal dichalcogenides (2D-TMDs) can modulate their optoelectronic and transport properties outstandingly. In this review, the current understanding and mechanism of the most recent and significant breakthrough of novel interlayer exciton emission and its modulation by harnessing the band energy alignment between TMDs and organic semiconductors in a TMD/organic (TMDO) hybrid heterostructure are demonstrated. The review encompasses up-to-date device demonstrations, including field-effect transistors, detectors, phototransistors, and photo-switchable superlattices. An exploration of distinct traits in 2D-TMDs and organic semiconductors delves into the applications of TMDO hybrid heterostructures. This review provides insights into the synthesis of 2D-TMDs and organic layers, covering fabrication techniques and challenges. Band bending and charge transfer via band energy alignment are explored from both structural and molecular orbital perspectives. The progress in emission modulation, including charge transfer, energy transfer, doping, defect healing, and phase engineering, is presented. The recent advancements in 2D-TMDO-based optoelectronic synaptic devices, including various 2D-TMDs and organic materials for neuromorphic applications are discussed. The section assesses their compatibility for synaptic devices, revisits the operating principles, and highlights the recent device demonstrations. Existing challenges and potential solutions are discussed. Finally, the review concludes by outlining the current challenges that span from synthesis intricacies to device applications, and by offering an outlook on the evolving field of emerging TMDO heterostructures.
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Affiliation(s)
- Sk Md Obaidulla
- Center of Excellence for Advanced Materials and Sensing Devices, Institute of Physics, Bijenička Cesta 46, HR-10000 Zagreb, Croatia.
- Department of Condensed Matter and Materials Physics, S. N. Bose National Centre for Basic Sciences, Sector III, Block JD, Salt Lake, Kolkata 700106, India
| | - Antonio Supina
- Center of Excellence for Advanced Materials and Sensing Devices, Institute of Physics, Bijenička Cesta 46, HR-10000 Zagreb, Croatia.
- Chair of Physics, Montanuniversität Leoben, Franz Josef Strasse 18, 8700 Leoben, Austria
| | - Sherif Kamal
- Center of Excellence for Advanced Materials and Sensing Devices, Institute of Physics, Bijenička Cesta 46, HR-10000 Zagreb, Croatia.
| | - Yahya Khan
- Department of Physics, Karakoram International university (KIU), Gilgit 15100, Pakistan
| | - Marko Kralj
- Center of Excellence for Advanced Materials and Sensing Devices, Institute of Physics, Bijenička Cesta 46, HR-10000 Zagreb, Croatia.
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Lee SH, Kim TJ, Lee E, Kwon D, Kim J, Joo J. Observation of aligned dipoles and angular chromism of exciplexes in organic molecular heterostructures. Nat Commun 2023; 14:7190. [PMID: 37938244 PMCID: PMC10632441 DOI: 10.1038/s41467-023-42976-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/09/2023] [Accepted: 10/26/2023] [Indexed: 11/09/2023] Open
Abstract
The dipole characteristics of Frenkel excitons and charge-transfer excitons between donor and acceptor molecules in organic heterostructures such as exciplexes are important in organic photonics and optoelectronics. For the bilayer of the organic donor 4,4',4''-tris[(3-methylphenyl)phenylamino]triphenylamine and acceptor 2,4,6-tris(biphenyl-3-yl)-1,3,5-triazine molecules, the exciplexes form aligned dipoles perpendicular to the Frenkel excitons, as observed in back focal plane photoluminescence images. The angular chromism of exciplexes observed in the 100 meV range indicates possible delocalization and angle-sensing photonic applications. The blue shift of the peak position and increase in the linewidth of photoluminescene spectra with increasing excitation power are caused by the repulsive aligned exciplex dipole moments with a long lifetime (4.65 μs). Electroluminescence spectra of the exciplex from organic light-emitting diodes using the bilayer are blue-shifted with increasing bias, suggesting unidirectional alignment of the exciplex dipole moments. The observation of exciplex dipole moment alignments across molecular interfaces can facilitate the controlled coupling of exciton species and increase efficiency of organic light-emitting diodes.
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Affiliation(s)
- Sang-Hun Lee
- Department of Physics, Korea University, Seoul, 02841, Republic of Korea
| | - Taek Joon Kim
- Department of Physics, Korea University, Seoul, 02841, Republic of Korea
| | - Eunji Lee
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Dayeong Kwon
- Department of Physics, Korea University, Seoul, 02841, Republic of Korea
| | - Jeongyong Kim
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea.
| | - Jinsoo Joo
- Department of Physics, Korea University, Seoul, 02841, Republic of Korea.
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Wang B, He JH, Yu B, He X, Xue F. Piezoelectricity-modulated optical recombination dynamics of monolayer-MoS 2/GaN-film heterostructures. NANOSCALE 2023; 15:2036-2043. [PMID: 36520146 DOI: 10.1039/d2nr05850b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Dynamic manipulation of optoelectronic responses by mechanical stimuli is promising for developing wearable electronics and human-machine interfacing. Although 2D-3D hybrid heterostructures can bring advancements in optoelectronics, their dynamic optical responses to external strains remain rarely studied. Here, we demonstrate the strain-tuned recombination dynamics of monolayer-MoS2 and thin-film-GaN heterostructures. We find that optical excitons in the heterostructures, apart from trions, can be markedly modulated by strains. We argue that MoS2 piezoelectric dipoles across the interfaces lead to curved band diagrams, in which optical excitons dissociate into spatially separated quasi-particles and concurrently relocate to the maxima of valence bands and the minima of conduction bands. With the increase in tensile strains, the photoluminescence (PL) intensity of the heterostructures shows quenched responses. Noticeably, the change in PL spectra strongly depends on the directions of the applied strains because of the lateral piezoelectric periodicity of MoS2 flakes. This work not only helps in understanding the underlying physics of the decreased PL intensities upon applying strains but also demonstrates a feasible way (i.e., strains) to manipulate the PL efficiency of 2D-material-based optoelectronics.
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Affiliation(s)
- Baoyu Wang
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, School of Micro-Nano Electronics, Zhejiang University, Hangzhou 310020, China.
| | - Jr-Hau He
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, China
| | - Bin Yu
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, School of Micro-Nano Electronics, Zhejiang University, Hangzhou 310020, China.
| | - Xin He
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, School of Micro-Nano Electronics, Zhejiang University, Hangzhou 310020, China.
| | - Fei Xue
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, School of Micro-Nano Electronics, Zhejiang University, Hangzhou 310020, China.
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Thompson JJP, Lumsargis V, Feierabend M, Zhao Q, Wang K, Dou L, Huang L, Malic E. Interlayer exciton landscape in WS 2/tetracene heterostructures. NANOSCALE 2023; 15:1730-1738. [PMID: 36594632 DOI: 10.1039/d2nr02055f] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
The vertical stacking of two-dimensional materials into heterostructures gives rise to a plethora of intriguing optoelectronic properties and presents an unprecedented potential for technological development. While much progress has been made combining different monolayers of transition metal dichalcogenides (TMDs), little is known about TMD-based heterostructures including organic layers of molecules. Here, we present a joint theory-experiment study on a TMD/tetracene heterostructure demonstrating clear signatures of spatially separated interlayer excitons in low temperature photoluminescence spectra. Here, the Coulomb-bound electrons and holes are localized either in the TMD or in the molecule layer, respectively. We reveal both in theory and experiment signatures of the entire intra- and interlayer exciton landscape in the photoluminescence spectra. In particular, we find both in theory and experiment a pronounced transfer of intensity from the intralayer TMD exciton to a series of energetically lower interlayer excitons with decreasing temperature. In addition, we find signatures of phonon-sidebands stemming from these interlayer exciton states. Our findings shed light on the microscopic nature of interlayer excitons in TMD/molecule heterostructures and could have important implications for technological applications of these materials.
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Affiliation(s)
- Joshua J P Thompson
- Department of Physics, Philipps-Universität Marburg, 35037 Marburg, Germany.
| | - Victoria Lumsargis
- Department of Chemistry, Purdue University, West Lafayette, Indiana, 47907, USA
| | - Maja Feierabend
- Department of Physics, Chalmers University of Technology, 412 96 Gothenburg, Sweden
| | - Quichen Zhao
- Department of Chemistry, Purdue University, West Lafayette, Indiana, 47907, USA
- State Key Laboratory of Superhard Materials, Jilin University, Changchun, Jilin, 130012, China
| | - Kang Wang
- Davidson School of Chemical Engineering, Purdue University, West Lafayette, Indiana, 47907, USA
| | - Letian Dou
- Davidson School of Chemical Engineering, Purdue University, West Lafayette, Indiana, 47907, USA
| | - Libai Huang
- Department of Chemistry, Purdue University, West Lafayette, Indiana, 47907, USA
| | - Ermin Malic
- Department of Physics, Philipps-Universität Marburg, 35037 Marburg, Germany.
- Department of Physics, Chalmers University of Technology, 412 96 Gothenburg, Sweden
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Kong Y, Obaidulla SM, Habib MR, Wang Z, Wang R, Khan Y, Zhu H, Xu M, Yang D. Interlayer exciton emission in a MoS 2/VOPc inorganic/organic van der Waals heterostructure. MATERIALS HORIZONS 2022; 9:1253-1263. [PMID: 35099485 DOI: 10.1039/d1mh01622a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Heterostructures built from two-dimensional (2D) materials and organic semiconductors offer a unique platform for addressing many fundamental physics and construction of functional devices by taking advantage of both the 2D materials and organic semiconductors. We report interlayer exciton emission in the near infrared range around 1.54 eV (∼805 nm) from the heterostructure of pyramidal VOPc (p-type) and transition metal dichalcogenide monolayer MoS2 (VOPc/MoS2). This contrasts the observation of photoluminescence (PL) from the SnCl2Pc/MoS2 heterostructure despite both being type-II heterostructures. We attribute the exciton emission to the carrier transition from the generated interface mid-gap states of VOPc to the ground states of MoS2 in the heterostructure system as predicted from density functional theory (DFT) calculations. Furthermore, the observed PL signal of the VOPc/MoS2 heterostructure shows blue shift, while the PL peak of the SnCl2Pc/MoS2 heterostructure shows red shift. Our finding opens up a new avenue to tune the optoelectronic properties of the van der Waals heterojunctions consisting of 2D materials and organic semiconductors for optoelectronic applications.
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Affiliation(s)
- Yuhan Kong
- Department of Polymer Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
- State Key Laboratory of Silicon Materials, School of Micro-Nano Electronics, Zhejiang University, Hangzhou 310027, P. R. China.
| | - Sk Md Obaidulla
- State Key Laboratory of Silicon Materials, School of Micro-Nano Electronics, Zhejiang University, Hangzhou 310027, P. R. China.
- Center of Excellence for Advanced Materials and Sensing Devices, Institute of Physics, Bijenička cesta 46, HR-10000 Zagreb, Croatia
| | - Mohammad Rezwan Habib
- State Key Laboratory of Silicon Materials, School of Micro-Nano Electronics, Zhejiang University, Hangzhou 310027, P. R. China.
| | - Zukun Wang
- Department of Chemistry, Zhejiang University, Hangzhou 310027, P. R. China
| | - Rong Wang
- ZJU Hangzhou Global Sci & Technol Innovat Ctr, Adv Semicond Res Inst, Hangzhou 311215, P. R. China
| | - Yahya Khan
- State Key Laboratory of Silicon Materials, School of Micro-Nano Electronics, Zhejiang University, Hangzhou 310027, P. R. China.
| | - Haiming Zhu
- Department of Chemistry, Zhejiang University, Hangzhou 310027, P. R. China
| | - Mingsheng Xu
- State Key Laboratory of Silicon Materials, School of Micro-Nano Electronics, Zhejiang University, Hangzhou 310027, P. R. China.
| | - Deren Yang
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China.
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Selvaraj P, Li PY, Antony M, Wang YW, Chou JP, Chen ZH, Hsu CJ, Huang CY. Rubbing-free liquid crystal electro-optic device based on organic single-crystal rubrene. OPTICS EXPRESS 2022; 30:9521-9533. [PMID: 35299378 DOI: 10.1364/oe.454130] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/19/2022] [Accepted: 03/01/2022] [Indexed: 06/14/2023]
Abstract
Liquid crystals (LCs) have been a vital component of modern communication and photonic technologies. However, traditional LC alignment on polyimide (PI) requires mechanically rubbing treatment to control LC orientation, suffering from dust particles, surface damage, and electrostatic charges. In this paper, LC alignment on organic single-crystal rubrene (SCR) has been studied and used to fabricate rubbing-free LC devices. A rubrene/toluene solution is spin-coated on the indium-tin-oxide (ITO) substrate and transformed thereafter to the orthorhombic SCR after annealing. Experimental result reveals that SCR-based LC cell has a homogeneous alignment geometry, the pretilt angle of LCs is low and the orientation of LCs is determined with capillary filling action of LCs. LC alignment on SCR performs a wider thermal tolerance than that on PI by virtue of the strong anchoring nature of LCs on SCR due to van der Waals and π-π electron stacking interactions between the rubrene and LCs. SCR-based LC cell performs a lower operation voltage, faster response time, and higher voltage holding ratio than the traditional PI-based LC cell. Organic SCR enables to play a role as weakly conductive alignment layer without rubbing treatment and offers versatile function to develop novel LC devices.
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Paul Inbaraj CR, Mathew RJ, Ulaganathan RK, Sankar R, Kataria M, Lin HY, Chen YT, Hofmann M, Lee CH, Chen YF. A Bi-Anti-Ambipolar Field Effect Transistor. ACS NANO 2021; 15:8686-8693. [PMID: 33970616 DOI: 10.1021/acsnano.1c00762] [Citation(s) in RCA: 15] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Multistate logic is recognized as a promising approach to increase the device density of microelectronics, but current approaches are offset by limited performance and large circuit complexity. We here demonstrate a route toward increased integration density that is enabled by a mechanically tunable device concept. Bi-anti-ambipolar transistors (bi-AATs) exhibit two distinct peaks in their transconductance and can be realized by a single 2D-material heterojunction-based solid-state device. Dynamic deformation of the device reveals the co-occurrence of two conduction pathways to be the origin of this previously unobserved behavior. Initially, carrier conduction proceeds through the junction edge, but illumination and application of strain can increase the recombination rate in the junction sufficiently to support an alternative carrier conduction path through the junction area. Optical characterization reveals a tunable emission pattern and increased optoelectronic responsivity that corroborates our model. Strain control permits the optimization of the conduction efficiency through both pathways and can be employed in quaternary inverters for future multilogic applications.
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Affiliation(s)
- Christy Roshini Paul Inbaraj
- Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan
- Nano-science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei 11529, Taiwan
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Roshan Jesus Mathew
- Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan
- Nano-science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei 11529, Taiwan
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan
| | | | - Raman Sankar
- Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan
- Institute of Physics, Academia Sinica, Taipei 11529, Taiwan
| | - Monika Kataria
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan
| | - Hsia Yu Lin
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Yit-Tsong Chen
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan
- Department of Chemistry, National Taiwan University, Taipei 10617, Taiwan
| | - Mario Hofmann
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Chih-Hao Lee
- Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Yang-Fang Chen
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Centre for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
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11
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Cho SH, Jang H, Im H, Lee D, Lee JH, Watanabe K, Taniguchi T, Seong MJ, Lee BH, Lee K. Bias-controlled multi-functional transport properties of InSe/BP van der Waals heterostructures. Sci Rep 2021; 11:7843. [PMID: 33846520 PMCID: PMC8041794 DOI: 10.1038/s41598-021-87442-1] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/17/2021] [Accepted: 03/25/2021] [Indexed: 11/09/2022] Open
Abstract
Van der Waals (vdW) heterostructures, consisting of a variety of low-dimensional materials, have great potential use in the design of a wide range of functional devices thanks to their atomically thin body and strong electrostatic tunability. Here, we demonstrate multi-functional indium selenide (InSe)/black phosphorous (BP) heterostructures encapsulated by hexagonal boron nitride. At a positive drain bias (VD), applied on the BP while the InSe is grounded, our heterostructures show an intermediate gate voltage (VBG) regime where the current hardly changes, working as a ternary transistor. By contrast, at a negative VD, the device shows strong negative differential transconductance characteristics; the peak current increases up to ~5 μA and the peak-to-valley current ratio reaches 1600 at VD = −2 V. Four-terminal measurements were performed on each layer, allowing us to separate the contributions of contact resistances and channel resistance. Moreover, multiple devices with different device structures and contacts were investigated, providing insight into the operation principle and performance optimization. We systematically investigated the influence of contact resistances, heterojunction resistance, channel resistance, and the thickness of BP on the detailed operational characteristics at different VD and VBG regimes.
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Affiliation(s)
- Sang-Hoo Cho
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju, 61005, Republic of Korea
| | - Hanbyeol Jang
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju, 61005, Republic of Korea
| | - Heungsoon Im
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju, 61005, Republic of Korea
| | - Donghyeon Lee
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju, 61005, Republic of Korea
| | - Je-Ho Lee
- Department of Physics, Chung-Ang University, Seoul, 06974, Republic of Korea
| | - Kenji Watanabe
- National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan
| | - Takashi Taniguchi
- National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan
| | - Maeng-Je Seong
- Department of Physics, Chung-Ang University, Seoul, 06974, Republic of Korea
| | - Byoung Hun Lee
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju, 61005, Republic of Korea.,Center for Semiconductor Technology Convergence (CSTC), Electrical Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, Gyeongbuk, 37673, Republic of Korea
| | - Kayoung Lee
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju, 61005, Republic of Korea. .,School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea.
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12
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Liu F, Zhang Y, Wang J, Chen Y, Wang L, Wang G, Dong J, Jiang C. MoS 2/pentacene hybrid complementary inverter based photodetector with amplified voltage-output. NANOTECHNOLOGY 2021; 32:015203. [PMID: 32947272 DOI: 10.1088/1361-6528/abb9da] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
A sensitive photodetection based on a novel hybrid CMOS inverter has been demonstrated. Unlike common photo-current type photodetectors, which convert optical signals to current, the CMOS inverter realizes voltage-output, overcoming the difficulty to monitor current signal in the range of nA. The hybrid CMOS logic inverter employs n-channel MoS2 nanosheet/perovskite heterojunction FET and p-channel organic pentacene FET in a planar architecture. In order to obtain high performance, we adopt the interdigital electrodes for the pentacene FET to enhance the current density of the p-channel, and stack perovskite on the MoS2 channel to modify the threshold voltage of the n-channel. As a result, a CMOS inverter with a voltage gain of more than ten is obtained. When VIN is around the transition voltage (-38 V), the inverter can obtain stable optical detection signal, the VOUT changes from 6 V in dark to 1 V under 633 nm light exposure. This finding indicates the potential to fabricate visible light detecting devices with voltage-output based on the inverter and may be further applicable for a photo-logic circuit.
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Affiliation(s)
- Fengjing Liu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology & CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Yiwei Zhang
- Faculty of Science, School of Physics and Optoelectronics, Beijing University of Technology, Beijing 100124, People's Republic of China
| | - Jiawei Wang
- Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, People's Republic of China
| | - Yiyi Chen
- School of Physics and Electronics, Shandong Normal University, Jinan 250358, People's Republic of China
| | - Liang Wang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology & CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
| | - Gongtang Wang
- School of Physics and Electronics, Shandong Normal University, Jinan 250358, People's Republic of China
| | - Ji Dong
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology & CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
| | - Chao Jiang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology & CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
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13
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Kim JY, Park HJ, Lee SH, Seo C, Kim J, Joo J. Distinctive Field-Effect Transistors and Ternary Inverters Using Cross-Type WSe 2/MoS 2 Heterojunctions Treated with Polymer Acid. ACS APPLIED MATERIALS & INTERFACES 2020; 12:36530-36539. [PMID: 32672032 DOI: 10.1021/acsami.0c09706] [Citation(s) in RCA: 13] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The electrical and optical characteristics of two-dimensional (2D) transition-metal dichalcogenides (TMDCs) can be improved by surface modification. In this study, distinctive field-effect transistors (FETs) were realized by forming cross-type 2D WSe2/MoS2 p-n heterojunctions through surface treatment using poly(methyl methacrylate-co-methacrylic acid) (PMMA-co-PMAA). The FETs were applied to new ternary inverters as multivalued logic circuits (MVLCs). Laser confocal microscope photoluminescence spectroscopy indicated the generation of trions in the WSe2 and MoS2 layers, and the intensity decreased after PMMA-co-PMAA treatment. For the cross-type WSe2/MoS2 p-n heterojunction FETs subjected to PMMA-co-PMAA treatment, the channel current and the region of anti-ambipolar transistor characteristics increased considerably, and ternary inverter characteristics with three stable logic states, "1", "1/2", and "0", were realized. Interestingly, the intermediate logic state 1/2, which results from the negative differential transconductance characteristics, was realized by the turn-on of all component FETs, as the current of the FETs increased after PMMA-co-PMAA treatment. The electron-rich carboxyl acid moieties in PMMA-co-PMAA can undergo coordination with the metal Mo or W atoms present in the Se or S vacancies, respectively, resulting in the modulation of charge density. These features yielded distinctive FETs and ternary inverters for MVLCs using cross-type WSe2/MoS2 heterojunctions.
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Affiliation(s)
- Jun Young Kim
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
| | - Hyeon Jung Park
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
| | - Sang-Hun Lee
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
| | - Changwon Seo
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jeongyong Kim
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jinsoo Joo
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
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14
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Pei K, Wang F, Han W, Yang S, Liu K, Liu K, Li H, Zhai T. Suppression of Persistent Photoconductivity of Rubrene Crystals using Gate-Tunable Rubrene/Bi 2 Se 3 Diodes with Photoinduced Negative Differential Resistance. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e2002312. [PMID: 32627927 DOI: 10.1002/smll.202002312] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/10/2020] [Revised: 06/01/2020] [Indexed: 05/08/2023]
Abstract
Organic single-crystalline semiconductors show great potential in high-performance photodetectors. However, they suffer from persistent photoconductivity (PPC) due to the charge trapping, which has severely hindered high-speed imaging applications. Here, a universal strategy of solving the PPC by integrating with topological insulator Bi2 Se3 is provided. The rubrene/Bi2 Se3 heterojunctions are selected as an example for general demonstration due to the reproducibly high mobility and broad optoelectronic applications of rubrene crystals. By virtue of high carrier concentration on Bi2 Se3 surface and the strong built-in electrical field, the photoresponse of the heterotransistor is significantly reduced for more than two orders (from over 10 s to 54 ms), meanwhile the photoresponsivity can reach 124 A W-1 . To the best of knowledge, this operating speed is among the fastest responses in organic-inorganic heterojunctions. The heterotransistor also shows unique negative differential resistance under positive gate bias, which can be explained by photoinduced de-trapping of electron trap states in the bulk rubrene crystals. Besides, the rubrene/Bi2 Se3 heterojunction behaves as a gate-tunable backward-like diode due to the inhomogenous carrier distribution in the thick rubrene crystal and inversion of relative Fermi level positions. The findings demonstrate versatile functionalities of the rubrene/Bi2 Se3 heterojunctions for various emerging optoelectronic applications.
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Affiliation(s)
- Ke Pei
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Fakun Wang
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Wei Han
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Sanjun Yang
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Kailang Liu
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Kewei Liu
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, P. R. China
| | - Huiqiao Li
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
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15
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Beck ME, Hersam MC. Emerging Opportunities for Electrostatic Control in Atomically Thin Devices. ACS NANO 2020; 14:6498-6518. [PMID: 32463222 DOI: 10.1021/acsnano.0c03299] [Citation(s) in RCA: 19] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
Electrostatic control of charge carrier concentration underlies the field-effect transistor (FET), which is among the most ubiquitous devices in the modern world. As transistors and related electronic devices have been miniaturized to the nanometer scale, electrostatics have become increasingly important, leading to progressively sophisticated device geometries such as the finFET. With the advent of atomically thin materials in which dielectric screening lengths are greater than device physical dimensions, qualitatively different opportunities emerge for electrostatic control. In this Review, recent demonstrations of unconventional electrostatic modulation in atomically thin materials and devices are discussed. By combining low dielectric screening with the other characteristics of atomically thin materials such as relaxed requirements for lattice matching, quantum confinement of charge carriers, and mechanical flexibility, high degrees of electrostatic spatial inhomogeneity can be achieved, which enables a diverse range of gate-tunable properties that are useful in logic, memory, neuromorphic, and optoelectronic technologies.
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Affiliation(s)
- Megan E Beck
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Mark C Hersam
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208, United States
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16
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Lee J, Duong NT, Bang S, Park C, Nguyen DA, Jeon H, Jang J, Oh HM, Jeong MS. Modulation of Junction Modes in SnSe 2/MoTe 2 Broken-Gap van der Waals Heterostructure for Multifunctional Devices. NANO LETTERS 2020; 20:2370-2377. [PMID: 32031411 DOI: 10.1021/acs.nanolett.9b04926] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
We study the electronic and optoelectronic properties of a broken-gap heterojunction composed of SnSe2 and MoTe2 with gate-controlled junction modes. Owing to the interband tunneling current, our device can act as an Esaki diode and a backward diode with a peak-to-valley current ratio approaching 5.7 at room temperature. Furthermore, under an 811 nm laser irradiation the heterostructure exhibits a photodetectivity of up to 7.5 × 1012 Jones. In addition, to harness the electrostatic gate bias, Voc can be tuned from negative to positive by switching from the accumulation mode to the depletion mode of the heterojunction. Additionally, a photovoltaic effect with a fill factor exceeding 41% was observed, which highlights the significant potential for optoelectronic applications. This study not only demonstrates high-performance multifunctional optoelectronics based on the SnSe2/MoTe2 heterostructure but also provides a comprehensive understanding of broken-band alignment and its applications.
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Affiliation(s)
- Juchan Lee
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Ngoc Thanh Duong
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Seungho Bang
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Chulho Park
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Duc Anh Nguyen
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Hobeom Jeon
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jiseong Jang
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Hye Min Oh
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Mun Seok Jeong
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
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17
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Xie XY, Liu XY, Fang Q, Fang WH, Cui G. Photoinduced Carrier Dynamics at the Interface of Pentacene and Molybdenum Disulfide. J Phys Chem A 2019; 123:7693-7703. [PMID: 31419385 DOI: 10.1021/acs.jpca.9b04728] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/07/2023]
Abstract
Understanding of photoinduced interfacial carrier dynamics in organic-transition metal dichalcogenides heterostructures is very important for the enhancement of their potential photoelectronic conversion efficiencies. In this work we have used density functional theory (DFT) calculations and DFT-based fewest-switches surface-hopping dynamics simulations to explore the photoinduced hole transfer and subsequent nonadiabatic electron-hole recombination dynamics taking place at the interface of pentacene and MoS2 in pentacene@MoS2. Upon photoexcitation the electronic transition mainly occurs on the MoS2 monolayer, which corresponds to moving an electron to the MoS2 conduction band. As a result, a hole is left in the valence band. This hole state is energetically lower than certain occupied states of the pentacene molecule; thus, the interfacial hole transfer from MoS2 to pentacene is favorable in energy. In terms of nonadiabatic dynamics simulations, the hole transfer time to the HOMO-1 state of the pentacene is estimated to be about 600 fs; however, the following hole relaxation process from HOMO-1 to HOMO takes much longer time of ca. 15 ps due to the large energy gap between HOMO-1 and HOMO. Moreover, our results also show that the subsequent radiationless recombination process between the hole transferred to the pentacene molecule and the remaining electron on the MoS2 CBM needs about 10.2 ns. The computational results shed important mechanistic insights on the interfacial carrier dynamics of mixed-dimensional pentacene@MoS2. These insights could help to design excellent interfaces for organic-TMDs heterostructures.
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Affiliation(s)
- Xiao-Ying Xie
- Key Laboratory of Theoretical and Computational Photochemistry, Ministry of Education, College of Chemistry , Beijing Normal University , Beijing 100875 , China
| | - Xiang-Yang Liu
- Key Laboratory of Theoretical and Computational Photochemistry, Ministry of Education, College of Chemistry , Beijing Normal University , Beijing 100875 , China
| | - Qiu Fang
- Key Laboratory of Theoretical and Computational Photochemistry, Ministry of Education, College of Chemistry , Beijing Normal University , Beijing 100875 , China
| | - Wei-Hai Fang
- Key Laboratory of Theoretical and Computational Photochemistry, Ministry of Education, College of Chemistry , Beijing Normal University , Beijing 100875 , China
| | - Ganglong Cui
- Key Laboratory of Theoretical and Computational Photochemistry, Ministry of Education, College of Chemistry , Beijing Normal University , Beijing 100875 , China
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18
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Shin J, Cho K, Kim TY, Pak J, Kim JK, Lee W, Kim J, Chung S, Hong WK, Lee T. Dose-dependent effect of proton irradiation on electrical properties of WSe 2 ambipolar field effect transistors. NANOSCALE 2019; 11:13961-13967. [PMID: 31305825 DOI: 10.1039/c9nr03345a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The irradiation effect of high energy proton beams on tungsten diselenide (WSe2) ambipolar field-effect transistors was investigated. We measured the electrical characteristics of the fabricated WSe2 FETs before and after the 10 MeV proton beam irradiation with different doses of 1012, 1013, 1014, and 1015 cm-2. For low dose conditions (1012, 1013, and 1014 cm-2), the threshold voltages shifted to the negative gate voltage direction, and the current in the hole and electron accumulation regimes decreased and increased, respectively. However, the trends were opposite for the high dose condition (1015 cm-2); the threshold voltages shifted to the positive gate voltage direction, and the current in the hole and electron accumulation regimes increased and decreased, respectively. These phenomena can be explained by the combined effect of proton irradiation-induced traps and the applied gate bias condition. Specifically, irradiation-induced positive oxide traps in SiO2 dielectrics play a role in enhancing electron accumulation and reducing hole accumulation in the WSe2 channel, whereas the irradiation-induced holes near the WSe2/SiO2 interface act as electron trapping sites, with enhancing hole accumulation and reducing electron accumulation in the WSe2 channel. This work will help improve the understanding of the effect of high energy irradiation on WSe2-based and other ambipolar nanoelectronic devices. In addition, this work shows the possibility of tuning the electrical properties of WSe2-based devices.
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Affiliation(s)
- Jiwon Shin
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea.
| | - Kyungjune Cho
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea.
| | - Tae-Young Kim
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea.
| | - Jinsu Pak
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea.
| | - Jae-Keun Kim
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea.
| | - Woocheol Lee
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea.
| | - Jaeyoung Kim
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea.
| | - Seungjun Chung
- Photo-Electronic Hybrids Research Center, Korea Institute of Science and Technology, Seoul 02792, Korea
| | - Woong-Ki Hong
- Jeonju Center, Korea Basic Science Institute, Jeonju, Jeollabuk-do 54907, Korea.
| | - Takhee Lee
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea.
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19
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Sun J, Choi Y, Choi YJ, Kim S, Park JH, Lee S, Cho JH. 2D-Organic Hybrid Heterostructures for Optoelectronic Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1803831. [PMID: 30786064 DOI: 10.1002/adma.201803831] [Citation(s) in RCA: 39] [Impact Index Per Article: 7.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/17/2018] [Revised: 01/10/2019] [Indexed: 05/08/2023]
Abstract
The unique properties of hybrid heterostructures have motivated the integration of two or more different types of nanomaterials into a single optoelectronic device structure. Despite the promising features of organic semiconductors, such as their acceptable optoelectronic properties, availability of low-cost processes for their fabrication, and flexibility, further optimization of both material properties and device performances remains to be achieved. With the emergence of atomically thin 2D materials, they have been integrated with conventional organic semiconductors to form multidimensional heterostructures that overcome the present limitations and provide further opportunities in the field of optoelectronics. Herein, a comprehensive review of emerging 2D-organic heterostructures-from their synthesis and fabrication to their state-of-the-art optoelectronic applications-is presented. Future challenges and opportunities associated with these heterostructures are highlighted.
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Affiliation(s)
- Jia Sun
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 440-746, Republic of Korea
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan, 410083, P. R. China
| | - Yongsuk Choi
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 440-746, Republic of Korea
| | - Young Jin Choi
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 440-746, Republic of Korea
| | - Seongchan Kim
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 440-746, Republic of Korea
| | - Jin-Hong Park
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 440-746, Republic of Korea
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, 440-746, Republic of Korea
| | - Sungjoo Lee
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, 440-746, Republic of Korea
- Department of Nano Engineering, Sungkyunkwan University, Suwon, 440-746, Republic of Korea
| | - Jeong Ho Cho
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 440-746, Republic of Korea
- Department of Nano Engineering, Sungkyunkwan University, Suwon, 440-746, Republic of Korea
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