1
|
Yang MH, Wang CH, Lai YH, Wang CH, Chen YJ, Chen JY, Chu YH, Wu WW. Antiferroelectric Heterostructures Memristors with Unique Resistive Switching Mechanisms and Properties. NANO LETTERS 2024; 24:11482-11489. [PMID: 39158148 DOI: 10.1021/acs.nanolett.4c02705] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/20/2024]
Abstract
A novel antiferroelectric material, PbSnO3 (PSO), was introduced into a resistive random access memory (RRAM) to reveal its resistive switching (RS) properties. It exhibits outstanding electrical performance with a large memory window (>104), narrow switching voltage distribution (±2 V), and low power consumption. Using high-resolution transmission electron microscopy, we observed the antiferroelectric properties and remanent polarization of the PSO thin films. The in-plane shear strains in the monoclinic PSO layer are attributed to oxygen octahedral tilts, resulting in misfit dislocations and grain boundaries at the PSO/SRO interface. Furthermore, the incoherent grain boundaries between the orthorhombic and monoclinic phases are assumed to be the primary paths of Ag+ filaments. Therefore, the RS behavior is primarily dominated by antiferroelectric polarization and defect mechanisms for the PSO structures. The RS behavior of antiferroelectric heterostructures controlled by switching spontaneous polarization and strain, defects, and surface chemistry reactions can facilitate the development of new antiferroelectric device systems.
Collapse
Affiliation(s)
- Meng-Hsuan Yang
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, No. 1001, University Road, East District, Hsinchu City 30010, Taiwan
| | - Che-Hung Wang
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, No. 1001, University Road, East District, Hsinchu City 30010, Taiwan
| | - Yu-Hong Lai
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, No. 1001, University Road, East District, Hsinchu City 30010, Taiwan
| | - Chien-Hua Wang
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, No. 1001, University Road, East District, Hsinchu City 30010, Taiwan
| | - Yen-Jung Chen
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, No. 1001, University Road, East District, Hsinchu City 30010, Taiwan
| | - Jui-Yuan Chen
- Department of Materials Science and Engineering, National United University, No.1, Lienda, Miaoli City 360301, Taiwan
| | - Ying-Hao Chu
- Department of Materials Science and Engineering, National Tsing Hua University, No. 101, Sec. 2, Guangfu Rd., East District, Hsinchu City 300044, Taiwan
| | - Wen-Wei Wu
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, No. 1001, University Road, East District, Hsinchu City 30010, Taiwan
- Future Semiconductor Technology Research Center, National Yang Ming Chiao Tung University, No. 1001, University Road, East District, Hsinchu City 30010, Taiwan
| |
Collapse
|
2
|
Gao P, Duan M, Yang G, Zhang W, Jia C. Ultralow Energy Consumption and Fast Neuromorphic Computing Based on La 0.1Bi 0.9FeO 3 Ferroelectric Tunnel Junctions. NANO LETTERS 2024; 24:10767-10775. [PMID: 39172999 DOI: 10.1021/acs.nanolett.4c01924] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/24/2024]
Abstract
Low-power and fast artificial neural network devices represent the direction in developing analogue neural networks. Here, an ultralow power consumption (0.8 fJ) and rapid (100 ns) La0.1Bi0.9FeO3/La0.7Sr0.3MnO3 ferroelectric tunnel junction artificial synapse has been developed to emulate the biological neural networks. The visual memory and forgetting functionalities have been emulated based on long-term potentiation and depression with good linearity. Moreover, with a single device, logical operations of "AND" and "OR" are implemented, and an artificial neural network was constructed with a recognition accuracy of 96%. Especially for noisy data sets, the recognition speed is faster after preprocessing by the device in the present work. This sets the stage for highly reliable and repeatable unsupervised learning.
Collapse
Affiliation(s)
- Pan Gao
- Henan Key Laboratory of Quantum Materials and Quantum Energy, School of Quantum Information Future Technology, Henan University, Kaifeng 475004, China
| | - Mengyuan Duan
- Henan Key Laboratory of Quantum Materials and Quantum Energy, School of Quantum Information Future Technology, Henan University, Kaifeng 475004, China
| | - Guanghong Yang
- Key Lab for Special Functional Materials of Ministry of Education, School of Materials, Henan University, Kaifeng 475004, P. R. China
| | - Weifeng Zhang
- Henan Key Laboratory of Quantum Materials and Quantum Energy, School of Quantum Information Future Technology, Henan University, Kaifeng 475004, China
- Institute of Quantum Materials and Physics, Henan Academy of Sciences, Zhengzhou 450046, China
| | - Caihong Jia
- Henan Key Laboratory of Quantum Materials and Quantum Energy, School of Quantum Information Future Technology, Henan University, Kaifeng 475004, China
| |
Collapse
|
3
|
Coffineau D, Gariépy N, Manchon B, Dawant R, Jaouad A, Grondin E, Ecoffey S, Alibart F, Beilliard Y, Ruediger A, Drouin D. CMOS-compatible Hf 0.5Zr 0.5O 2-based ferroelectric memory crosspoints fabricated with damascene process. NANOTECHNOLOGY 2024; 35:425701. [PMID: 39019047 DOI: 10.1088/1361-6528/ad644f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/20/2023] [Accepted: 07/17/2024] [Indexed: 07/19/2024]
Abstract
We report the fabrication of Hf0.5Zr0.5O2(HZO) based ferroelectric memory crosspoints using a complementary metal-oxide-semiconductor-compatible damascene process. In this work, we compared 12 and 56µm2crosspoint devices with the 0.02 mm2round devices commonly used as a benchmark. For all devices, a 9 nm thick ferroelectric thin film was deposited by plasma-enhanced atomic layer deposition on planarized bottom electrodes. The wake-up appeared to be longer for the crosspoint memories compared to 0.02 mm2benchmark, while all the devices reached a 2Prvalue of ∼50µC cm-2after 105cycles with 3 V/10µs squared pulses. The crosspoints stand out for their superior endurance, which was increased by an order of magnitude. Nucleation limited switching experiments were performed, revealing a switching time <170 ns for our 12 and 56µm2devices, while it remained in theµs range for the larger round devices. The downscaled devices demonstrate notable advantages with a rise in endurance and switching speed.
Collapse
Affiliation(s)
- Dorian Coffineau
- Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, J1K 0A5 Sherbrooke, Québec, Canada
- Laboratoire Nanotechnologies Nanosystèmes (LN2)-CNRS UMI-3463, J1K 0A5 Sherbrooke, Québec, Canada
| | - Nicolas Gariépy
- Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, J1K 0A5 Sherbrooke, Québec, Canada
- Laboratoire Nanotechnologies Nanosystèmes (LN2)-CNRS UMI-3463, J1K 0A5 Sherbrooke, Québec, Canada
| | - Benoit Manchon
- Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, J1K 0A5 Sherbrooke, Québec, Canada
- Laboratoire Nanotechnologies Nanosystèmes (LN2)-CNRS UMI-3463, J1K 0A5 Sherbrooke, Québec, Canada
- Univ Lyon, INSA Lyon, ECL, CNRS, UCBL, CPE Lyon, INL, UMR5270, 69621 Villeurbanne, France
| | - Raphaël Dawant
- Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, J1K 0A5 Sherbrooke, Québec, Canada
- Laboratoire Nanotechnologies Nanosystèmes (LN2)-CNRS UMI-3463, J1K 0A5 Sherbrooke, Québec, Canada
| | - Abdelatif Jaouad
- Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, J1K 0A5 Sherbrooke, Québec, Canada
- Laboratoire Nanotechnologies Nanosystèmes (LN2)-CNRS UMI-3463, J1K 0A5 Sherbrooke, Québec, Canada
| | - Etienne Grondin
- Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, J1K 0A5 Sherbrooke, Québec, Canada
- Laboratoire Nanotechnologies Nanosystèmes (LN2)-CNRS UMI-3463, J1K 0A5 Sherbrooke, Québec, Canada
| | - Serge Ecoffey
- Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, J1K 0A5 Sherbrooke, Québec, Canada
- Laboratoire Nanotechnologies Nanosystèmes (LN2)-CNRS UMI-3463, J1K 0A5 Sherbrooke, Québec, Canada
| | - Fabien Alibart
- Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, J1K 0A5 Sherbrooke, Québec, Canada
- Laboratoire Nanotechnologies Nanosystèmes (LN2)-CNRS UMI-3463, J1K 0A5 Sherbrooke, Québec, Canada
| | - Yann Beilliard
- Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, J1K 0A5 Sherbrooke, Québec, Canada
- Laboratoire Nanotechnologies Nanosystèmes (LN2)-CNRS UMI-3463, J1K 0A5 Sherbrooke, Québec, Canada
| | - Andreas Ruediger
- Institut National de la Recherche Scientifique (INRS), centre Énergie, Matériaux, Télécommunications, Varennes, Québec J3X 1S2, Canada
| | - Dominique Drouin
- Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, J1K 0A5 Sherbrooke, Québec, Canada
- Laboratoire Nanotechnologies Nanosystèmes (LN2)-CNRS UMI-3463, J1K 0A5 Sherbrooke, Québec, Canada
| |
Collapse
|
4
|
Lai XC, Tang Z, Fang J, Feng L, Yao DJ, Zhang L, Jiang YP, Liu QX, Tang XG, Zhou YC, Shang J, Zhong GK, Gao J. An adjustable multistage resistance switching behavior of a photoelectric artificial synaptic device with a ferroelectric diode effect for neuromorphic computing. MATERIALS HORIZONS 2024; 11:2886-2897. [PMID: 38563639 DOI: 10.1039/d4mh00064a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/04/2024]
Abstract
Neuromorphic computing, which mimics biological neural networks, is widely regarded as the optimal solution for addressing the limitations of traditional von Neumann computing architecture. In this work, an adjustable multistage resistance switching ferroelectric Bi2FeCrO6 diode artificial synaptic device was fabricated using a sol-gel method with a simple process. The device exhibits nonlinearity in its electrical characteristics, demonstrating tunable multistage resistance switching behavior and a strong ferroelectric diode effect through the manipulation of ferroelectric polarization. One of its salient advantages resides in its capacity to dynamically regulate its polarization state in response to an external electric field, thereby facilitating the fine-tuning of synaptic connection strength while maintaining synaptic stability. The device is capable of accurately simulating the fundamental properties of biological synapses, including long/short-term plasticity, paired-pulse facilitation, and spike-timing-dependent plasticity. Additionally, the device exhibits a distinctive photoelectric response and is capable of inducing synaptic plasticity by light signal activation. The utilization of a femtosecond laser for the scrutiny of carrier transport mechanisms imparts profound insights into the intricate dynamics governing the optical memory effect. Furthermore, utilizing a convolutional neural network (CNN) architecture, the recognition accuracy of the MNIST and fashion MNIST datasets was improved to 95.6% and 78%, respectively, through the implementation of improved random adaptive algorithms. These findings present a new opportunity for utilizing Bi2FeCrO6 materials in the development of artificial synapses for neuromorphic computation.
Collapse
Affiliation(s)
- Xi-Cai Lai
- School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou Higher Education Mega Center, Guangzhou, 510006, P. R. China.
| | - Zhenhua Tang
- School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou Higher Education Mega Center, Guangzhou, 510006, P. R. China.
| | - Junlin Fang
- School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou Higher Education Mega Center, Guangzhou, 510006, P. R. China.
| | - Leyan Feng
- School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou Higher Education Mega Center, Guangzhou, 510006, P. R. China.
| | - Di-Jie Yao
- School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou Higher Education Mega Center, Guangzhou, 510006, P. R. China.
| | - Li Zhang
- School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou Higher Education Mega Center, Guangzhou, 510006, P. R. China.
| | - Yan-Ping Jiang
- School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou Higher Education Mega Center, Guangzhou, 510006, P. R. China.
| | - Qiu-Xiang Liu
- School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou Higher Education Mega Center, Guangzhou, 510006, P. R. China.
| | - Xin-Gui Tang
- School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou Higher Education Mega Center, Guangzhou, 510006, P. R. China.
| | - Yi-Chun Zhou
- School of Advanced Materials and Nanotechnology, Xidian University, Xian 710126, China
| | - Jie Shang
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Gao-Kuo Zhong
- Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
| | - Ju Gao
- Department of Physics, The University of Hong Kong, Hong Kong 999077, P. R. China
| |
Collapse
|
5
|
Jayakrishnan AR, Kim JS, Hellenbrand M, Marques LS, MacManus-Driscoll JL, Silva JPB. Growth of emergent simple pseudo-binary ferroelectrics and their potential in neuromorphic computing devices. MATERIALS HORIZONS 2024; 11:2355-2371. [PMID: 38477152 PMCID: PMC11104485 DOI: 10.1039/d4mh00153b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/09/2024] [Accepted: 02/27/2024] [Indexed: 03/14/2024]
Abstract
Ferroelectric memory devices such as ferroelectric memristors, ferroelectric tunnel junctions, and field-effect transistors are considered among the most promising candidates for neuromorphic computing devices. The promise arises from their defect-independent switching mechanism, low energy consumption and high power efficiency, and important properties being aimed for are reliable switching at high speed, excellent endurance, retention, and compatibility with complementary metal-oxide-semiconductor (CMOS) technology. Binary or doped binary materials have emerged over conventional complex-composition ferroelectrics as an optimum solution, particularly in terms of CMOS compatibility. The current state-of-the-art route to achieving superlative ferroelectric performance of binary oxides is to induce ferroelectricity at the nanoscale, e.g., in ultra-thin films of doped HfO2, ZrO2, Zn1-xMgxO, Al-xScxN, and Bi1-xSmxO3. This short review article focuses on the materials science of emerging new ferroelectric materials, including their different properties such as remanent polarization, coercive field, endurance, etc. The potential of these materials is discussed for neuromorphic applications.
Collapse
Affiliation(s)
- Ampattu R Jayakrishnan
- Physics Center of Minho and Porto Universities (CF-UM-UP), University of Minho, Campus de Gualtar, 4710-057 Braga, Portugal.
- Laboratory of Physics for Materials and Emergent Technologies, LapMET, University of Minho, 4710-057 Braga, Portugal
| | - Ji S Kim
- Dept. of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Rd., Cambridge, CB3 OFS, UK.
| | - Markus Hellenbrand
- Dept. of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Rd., Cambridge, CB3 OFS, UK.
| | - Luís S Marques
- Physics Center of Minho and Porto Universities (CF-UM-UP), University of Minho, Campus de Gualtar, 4710-057 Braga, Portugal.
- Laboratory of Physics for Materials and Emergent Technologies, LapMET, University of Minho, 4710-057 Braga, Portugal
| | - Judith L MacManus-Driscoll
- Dept. of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Rd., Cambridge, CB3 OFS, UK.
| | - José P B Silva
- Physics Center of Minho and Porto Universities (CF-UM-UP), University of Minho, Campus de Gualtar, 4710-057 Braga, Portugal.
- Laboratory of Physics for Materials and Emergent Technologies, LapMET, University of Minho, 4710-057 Braga, Portugal
| |
Collapse
|
6
|
Hwang J, Goh Y, Jeon S. Physics, Structures, and Applications of Fluorite-Structured Ferroelectric Tunnel Junctions. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2305271. [PMID: 37863823 DOI: 10.1002/smll.202305271] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/24/2023] [Revised: 09/11/2023] [Indexed: 10/22/2023]
Abstract
The interest in ferroelectric tunnel junctions (FTJ) has been revitalized by the discovery of ferroelectricity in fluorite-structured oxides such as HfO2 and ZrO2 . In terms of thickness scaling, CMOS compatibility, and 3D integration, these fluorite-structured FTJs provide a number of benefits over conventional perovskite-based FTJs. Here, recent developments involving all FTJ devices with fluorite structures are examined. The transport mechanism of fluorite-structured FTJs is explored and contrasted with perovskite-based FTJs and other 2-terminal resistive switching devices starting with the operation principle and essential parameters of the tunneling electroresistance effect. The applications of FTJs, such as neuromorphic devices, logic-in-memory, and physically unclonable function, are then discussed, along with several structural approaches to fluorite-structure FTJs. Finally, the materials and device integration difficulties related to fluorite-structure FTJ devices are reviewed. The purpose of this review is to outline the theories, physics, fabrication processes, applications, and current difficulties associated with fluorite-structure FTJs while also describing potential future possibilities for optimization.
Collapse
Affiliation(s)
- Junghyeon Hwang
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, South Korea
| | - Youngin Goh
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, South Korea
| | - Sanghun Jeon
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, South Korea
| |
Collapse
|
7
|
Sun Q, Zhou X, Liu X, Yuan Y, Sun L, Wang D, Xue F, Luo H, Zhang D, Sun J. Quasi-Zero-Dimensional Ferroelectric Polarization Charges-Coupled Resistance Switching with High-Current Density in Ultrascaled Semiconductors. NANO LETTERS 2024; 24:975-982. [PMID: 38189647 DOI: 10.1021/acs.nanolett.3c04378] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/09/2024]
Abstract
Ferroelectric memristors hold immense promise for advanced memory and neuromorphic computing. However, they face limitations due to low readout current density in conventional designs with low-conductive ferroelectric channels, especially at the nanoscale. Here, we report a ferroelectric-mediated memristor utilizing a 2D MoS2 nanoribbon channel with an ultrascaled cross-sectional area of <1000 nm2, defined by a ferroelectric BaTiO3 nanoribbon stacked on top. Strikingly, the Schottky barrier at the MoS2 contact can be effectively tuned by the charge transfers coupled with quasi-zero-dimensional polarization charges formed at the two ends of the nanoribbon, which results in distinctive resistance switching accompanied by multiple negative differential resistance showing the high-current density of >104 A/cm2. The associated space charges in BaTiO3 are minimized to ∼3.7% of the polarization charges, preserving nonvolatile polarization. This achievement establishes ferroelectric-mediated nanoscale semiconductor memristors with high readout current density as promising candidates for memory and highly energy-efficient in-memory computing applications.
Collapse
Affiliation(s)
- Qi Sun
- School of Physics, Central South University, Changsha, 410083, Hunan, China
| | - Xuefan Zhou
- State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083, Hunan, China
| | - Xiaochi Liu
- School of Physics, Central South University, Changsha, 410083, Hunan, China
| | - Yahua Yuan
- School of Physics, Central South University, Changsha, 410083, Hunan, China
| | - Linfeng Sun
- School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Ding Wang
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, School of Micro-Nano Electronics, Zhejiang University, Hangzhou 311215, China
| | - Fei Xue
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, School of Micro-Nano Electronics, Zhejiang University, Hangzhou 311215, China
| | - Hang Luo
- State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083, Hunan, China
| | - Dou Zhang
- State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083, Hunan, China
| | - Jian Sun
- School of Physics, Central South University, Changsha, 410083, Hunan, China
| |
Collapse
|
8
|
Jeon K, Ryu JJ, Im S, Seo HK, Eom T, Ju H, Yang MK, Jeong DS, Kim GH. Purely self-rectifying memristor-based passive crossbar array for artificial neural network accelerators. Nat Commun 2024; 15:129. [PMID: 38167379 PMCID: PMC10761713 DOI: 10.1038/s41467-023-44620-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/05/2023] [Accepted: 12/21/2023] [Indexed: 01/05/2024] Open
Abstract
Memristor-integrated passive crossbar arrays (CAs) could potentially accelerate neural network (NN) computations, but studies on these devices are limited to software-based simulations owing to their poor reliability. Herein, we propose a self-rectifying memristor-based 1 kb CA as a hardware accelerator for NN computations. We conducted fully hardware-based single-layer NN classification tasks involving the Modified National Institute of Standards and Technology database using the developed passive CA, and achieved 100% classification accuracy for 1500 test sets. We also investigated the influences of the defect-tolerance capability of the CA, impact of the conductance range of the integrated memristors, and presence or absence of selection functionality in the integrated memristors on the image classification tasks. We offer valuable insights into the behavior and performance of CA devices under various conditions and provide evidence of the practicality of memristor-integrated passive CAs as hardware accelerators for NN applications.
Collapse
Affiliation(s)
- Kanghyeok Jeon
- Division of Materials Science and Engineering, Hanyang University, Seoul, 04763, Republic of Korea
- Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT), Daejeon, 34114, Republic of Korea
| | - Jin Joo Ryu
- Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT), Daejeon, 34114, Republic of Korea
- Department of Materials Science and Engineering, Yonsei University, Seoul, 03722, Republic of Korea
| | - Seongil Im
- Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea
| | - Hyun Kyu Seo
- Intelligent Electronic Device Lab, Sahmyook University, 815 Hwarang-ro, Nowon-Gu, Seoul, 01795, Republic of Korea
| | - Taeyong Eom
- Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT), Daejeon, 34114, Republic of Korea
| | - Hyunsu Ju
- Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea.
| | - Min Kyu Yang
- Intelligent Electronic Device Lab, Sahmyook University, 815 Hwarang-ro, Nowon-Gu, Seoul, 01795, Republic of Korea.
| | - Doo Seok Jeong
- Division of Materials Science and Engineering, Hanyang University, Seoul, 04763, Republic of Korea.
| | - Gun Hwan Kim
- Department of Materials Science and Engineering, Yonsei University, Seoul, 03722, Republic of Korea.
- Department of System Semiconductor Engineering, Yonsei University, Seoul, 03722, Republic of Korea.
| |
Collapse
|
9
|
Chouprik A, Mikheev V, Korostylev E, Kozodaev M, Zarubin S, Vinnik D, Gudkova S, Negrov D. Wake-Up Free Ultrathin Ferroelectric Hf 0.5Zr 0.5O 2 Films. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2825. [PMID: 37947671 PMCID: PMC10648811 DOI: 10.3390/nano13212825] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/21/2023] [Revised: 10/16/2023] [Accepted: 10/23/2023] [Indexed: 11/12/2023]
Abstract
The development of the new generation of non-volatile high-density ferroelectric memory requires the utilization of ultrathin ferroelectric films. The most promising candidates are polycrystalline-doped HfO2 films because of their perfect compatibility with silicon technology and excellent ferroelectric properties. However, the remanent polarization of HfO2 films is known to degrade when their thickness is reduced to a few nanometers. One of the reasons for this phenomenon is the wake-up effect, which is more pronounced in the thinner the film. For the ultrathin HfO2 films, it can be so long-lasting that degradation occurs even before the wake-up procedure is completed. In this work, an approach to suppress the wake-up in ultrathin Hf0.5Zr0.5O2 films is elucidated. By engineering internal built-in fields in an as-prepared structure, a stable ferroelectricity without a wake-up effect is induced in 4.5 nm thick Hf0.5Zr0.5O2 film. By analysis of the functional characteristics of ferroelectric structures with a different pattern of internal built-in fields and their comparison with the results of in situ piezoresponse force microscopy and synchrotron X-ray micro-diffraction, the important role of built-in fields in ferroelectricity of ultrathin Hf0.5Zr0.5O2 films as well as the origin of stable ferroelectric properties is revealed.
Collapse
Affiliation(s)
- Anastasia Chouprik
- Moscow Institute of Physics and Technology (National Research University), Institutskii per. 9, 141701 Dolgoprudny, Russia; (V.M.); (E.K.); (M.K.); (S.Z.); (D.V.); (S.G.); (D.N.)
| | - Vitalii Mikheev
- Moscow Institute of Physics and Technology (National Research University), Institutskii per. 9, 141701 Dolgoprudny, Russia; (V.M.); (E.K.); (M.K.); (S.Z.); (D.V.); (S.G.); (D.N.)
| | - Evgeny Korostylev
- Moscow Institute of Physics and Technology (National Research University), Institutskii per. 9, 141701 Dolgoprudny, Russia; (V.M.); (E.K.); (M.K.); (S.Z.); (D.V.); (S.G.); (D.N.)
| | - Maxim Kozodaev
- Moscow Institute of Physics and Technology (National Research University), Institutskii per. 9, 141701 Dolgoprudny, Russia; (V.M.); (E.K.); (M.K.); (S.Z.); (D.V.); (S.G.); (D.N.)
| | - Sergey Zarubin
- Moscow Institute of Physics and Technology (National Research University), Institutskii per. 9, 141701 Dolgoprudny, Russia; (V.M.); (E.K.); (M.K.); (S.Z.); (D.V.); (S.G.); (D.N.)
| | - Denis Vinnik
- Moscow Institute of Physics and Technology (National Research University), Institutskii per. 9, 141701 Dolgoprudny, Russia; (V.M.); (E.K.); (M.K.); (S.Z.); (D.V.); (S.G.); (D.N.)
- Material Science and Physics & Chemistry of Materials, South Ural State University (National Research University), Lenin’s Prospect 76, 454080 Chelyabinsk, Russia
- Institute of Chemistry, Saint-Petersburg State University, Universitetskaya Embankment 7-9, 199034 St. Petersburg, Russia
| | - Svetlana Gudkova
- Moscow Institute of Physics and Technology (National Research University), Institutskii per. 9, 141701 Dolgoprudny, Russia; (V.M.); (E.K.); (M.K.); (S.Z.); (D.V.); (S.G.); (D.N.)
- Material Science and Physics & Chemistry of Materials, South Ural State University (National Research University), Lenin’s Prospect 76, 454080 Chelyabinsk, Russia
| | - Dmitrii Negrov
- Moscow Institute of Physics and Technology (National Research University), Institutskii per. 9, 141701 Dolgoprudny, Russia; (V.M.); (E.K.); (M.K.); (S.Z.); (D.V.); (S.G.); (D.N.)
| |
Collapse
|
10
|
Park JY, Choe DH, Lee DH, Yu GT, Yang K, Kim SH, Park GH, Nam SG, Lee HJ, Jo S, Kuh BJ, Ha D, Kim Y, Heo J, Park MH. Revival of Ferroelectric Memories Based on Emerging Fluorite-Structured Ferroelectrics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2204904. [PMID: 35952355 DOI: 10.1002/adma.202204904] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2022] [Revised: 07/25/2022] [Indexed: 06/15/2023]
Abstract
Over the last few decades, the research on ferroelectric memories has been limited due to their dimensional scalability and incompatibility with complementary metal-oxide-semiconductor (CMOS) technology. The discovery of ferroelectricity in fluorite-structured oxides revived interest in the research on ferroelectric memories, by inducing nanoscale nonvolatility in state-of-the-art gate insulators by minute doping and thermal treatment. The potential of this approach has been demonstrated by the fabrication of sub-30 nm electronic devices. Nonetheless, to realize practical applications, various technical limitations, such as insufficient reliability including endurance, retention, and imprint, as well as large device-to-device-variation, require urgent solutions. Furthermore, such limitations should be considered based on targeting devices as well as applications. Various types of ferroelectric memories including ferroelectric random-access-memory, ferroelectric field-effect-transistor, and ferroelectric tunnel junction should be considered for classical nonvolatile memories as well as emerging neuromorphic computing and processing-in-memory. Therefore, from the viewpoint of materials science, this review covers the recent research focusing on ferroelectric memories from the history of conventional approaches to future prospects.
Collapse
Affiliation(s)
- Ju Yong Park
- Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Duk-Hyun Choe
- Beyond Silicon Lab, Samsung Advanced Institute of Technology (SAIT), Suwon, 16678, Republic of Korea
| | - Dong Hyun Lee
- Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 08826, Republic of Korea
| | - Geun Taek Yu
- School of Materials Science and Engineering, Pusan National University, Busan, 46241, Republic of Korea
| | - Kun Yang
- Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 08826, Republic of Korea
| | - Se Hyun Kim
- Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 08826, Republic of Korea
| | - Geun Hyeong Park
- Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 08826, Republic of Korea
| | - Seung-Geol Nam
- Beyond Silicon Lab, Samsung Advanced Institute of Technology (SAIT), Suwon, 16678, Republic of Korea
| | - Hyun Jae Lee
- Beyond Silicon Lab, Samsung Advanced Institute of Technology (SAIT), Suwon, 16678, Republic of Korea
| | - Sanghyun Jo
- Beyond Silicon Lab, Samsung Advanced Institute of Technology (SAIT), Suwon, 16678, Republic of Korea
| | - Bong Jin Kuh
- Semiconductor Research and Development Center, Samsung Electronics, Hwaseong, 18448, Republic of Korea
| | - Daewon Ha
- Semiconductor Research and Development Center, Samsung Electronics, Hwaseong, 18448, Republic of Korea
| | - Yongsung Kim
- Beyond Silicon Lab, Samsung Advanced Institute of Technology (SAIT), Suwon, 16678, Republic of Korea
| | - Jinseong Heo
- Beyond Silicon Lab, Samsung Advanced Institute of Technology (SAIT), Suwon, 16678, Republic of Korea
| | - Min Hyuk Park
- Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
- Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 08826, Republic of Korea
| |
Collapse
|
11
|
Liu G, Wang W, Guo Z, Jia X, Zhao Z, Zhou Z, Niu J, Duan G, Yan X. Silicon based Bi 0.9La 0.1FeO 3 ferroelectric tunnel junction memristor for convolutional neural network application. NANOSCALE 2023; 15:13009-13017. [PMID: 37485606 DOI: 10.1039/d3nr00510k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/25/2023]
Abstract
Computing in memory (CIM) based on memristors is expected to completely solve the dilemma caused by von Neumann architecture. However, the performance of memristors based on traditional conductive filament mechanism is unstable. In this study, we report a nonvolatile high-performance memristor based on ferroelectric tunnel junction (FTJ) Pd/Bi0.9La0.1FeO3 (6.9 nm) (BLFO)/La0.67Sr0.33MnO3 (LSMO) on a silicon substrate. The conductance of this device was adjusted by different pulse stimulation parameter to achieve various synaptic functions because of ferroelectric polarization reversal. Based on the multiple conductance characteristics of the devices and the high linearity and symmetry of weight updating, image processing and VGG8 convolutional neural network (CNN) simulation based on the devices were realized. Excellent results of the image processing are demonstrated. The recognition accuracy of CNN offline learning reached an astonishing 92.07% based on Cifar-10 dataset. This provides a more feasible solution to break through the bottleneck of von Neumann architecture.
Collapse
Affiliation(s)
- Gongjie Liu
- Key Laboratory of brain-like neuromorphic devices and Systems of Hebei Province, College of Electron and Information Engineering, Hebei University, Baoding 071002, P. R. China.
| | - Wei Wang
- Key Laboratory of brain-like neuromorphic devices and Systems of Hebei Province, College of Electron and Information Engineering, Hebei University, Baoding 071002, P. R. China.
| | - Zhenqiang Guo
- Key Laboratory of brain-like neuromorphic devices and Systems of Hebei Province, College of Electron and Information Engineering, Hebei University, Baoding 071002, P. R. China.
| | - Xiaotong Jia
- Key Laboratory of brain-like neuromorphic devices and Systems of Hebei Province, College of Electron and Information Engineering, Hebei University, Baoding 071002, P. R. China.
| | - Zhen Zhao
- Key Laboratory of brain-like neuromorphic devices and Systems of Hebei Province, College of Electron and Information Engineering, Hebei University, Baoding 071002, P. R. China.
| | - Zhenyu Zhou
- Key Laboratory of brain-like neuromorphic devices and Systems of Hebei Province, College of Electron and Information Engineering, Hebei University, Baoding 071002, P. R. China.
| | - Jiangzhen Niu
- Key Laboratory of brain-like neuromorphic devices and Systems of Hebei Province, College of Electron and Information Engineering, Hebei University, Baoding 071002, P. R. China.
| | - Guojun Duan
- Key Laboratory of brain-like neuromorphic devices and Systems of Hebei Province, College of Electron and Information Engineering, Hebei University, Baoding 071002, P. R. China.
| | - Xiaobing Yan
- Key Laboratory of brain-like neuromorphic devices and Systems of Hebei Province, College of Electron and Information Engineering, Hebei University, Baoding 071002, P. R. China.
| |
Collapse
|
12
|
Tarkov M, Tikhonenko F, Popov V, Antonov V, Miakonkikh A, Rudenko K. Ferroelectric Devices for Content-Addressable Memory. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:4488. [PMID: 36558341 PMCID: PMC9785747 DOI: 10.3390/nano12244488] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/29/2022] [Revised: 12/10/2022] [Accepted: 12/15/2022] [Indexed: 06/17/2023]
Abstract
In-memory computing is an attractive solution for reducing power consumption and memory access latency cost by performing certain computations directly in memory without reading operands and sending them to arithmetic logic units. Content-addressable memory (CAM) is an ideal way to smooth out the distinction between storage and processing, since each memory cell is a processing unit. CAM compares the search input with a table of stored data and returns the matched data address. The issues of constructing binary and ternary content-addressable memory (CAM and TCAM) based on ferroelectric devices are considered. A review of ferroelectric materials and devices is carried out, including on ferroelectric transistors (FeFET), ferroelectric tunnel diodes (FTJ), and ferroelectric memristors.
Collapse
Affiliation(s)
- Mikhail Tarkov
- Rzhanov Institute of Semiconductor Physics SB RAS, 630090 Novosibirsk, Russia
| | - Fedor Tikhonenko
- Rzhanov Institute of Semiconductor Physics SB RAS, 630090 Novosibirsk, Russia
| | - Vladimir Popov
- Rzhanov Institute of Semiconductor Physics SB RAS, 630090 Novosibirsk, Russia
| | - Valentin Antonov
- Rzhanov Institute of Semiconductor Physics SB RAS, 630090 Novosibirsk, Russia
| | - Andrey Miakonkikh
- Valiev Institute of Physics and Technology RAS, 117218 Moscow, Russia
| | | |
Collapse
|
13
|
George T, Murugan AV. Improved Performance of the Al 2O 3-Protected HfO 2-TiO 2 Base Layer with a Self-Assembled CH 3NH 3PbI 3 Heterostructure for Extremely Low Operating Voltage and Stable Filament Formation in Nonvolatile Resistive Switching Memory. ACS APPLIED MATERIALS & INTERFACES 2022; 14:51066-51083. [PMID: 36397313 DOI: 10.1021/acsami.2c13478] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Herein, we report intriguing observations of an extremely stable nonvolatile bipolar resistive switching (NVBRS) memory device fabricated using HfO2-TiO2 topologically protected by Al2O3 as a stacked base layer for a CH3NH3PbI3 (MAPI) electrolyte layer sandwiched between Ag and fluorine-doped tin oxide (FTO) electrodes. MAPI has been successfully synthesized by a rapid microwave-solvothermal (MW-ST) method within 10 min at 120 °C without requiring any inert gas atmosphere using low-cost precursors and solvents. Subsequently, MAPI powders are dissolved in aprotic solvents (DMF/DMSO = 8:2), and a spin-coated thin film is allowed to recrystallize upon annealing at 120 °C via a solution-based nanoscale self-assembly process. The fabricated memory device with the Ag/MAPI/Al2O3/TiO2-HfO2/FTO configuration shows an enhanced resistance ratio of 105 for >104 s at an extremely lower operating voltage (SET +0.2 V, RESET -0.2 V) when compared to that of the pristine MAPI device (±1 V, 102, 104 s). We show that the memory device also exhibits a remarkable endurance of ≥3500 cycles due to the Al2O3 robust coating on the HfO2-TiO2 layer, facilitating prompt heterojunction formation. Thus, the adopted innovative strategies to prepare structurally and optically stable (∼1.5 years) MAPI under high-humid conditions could offer enhanced performance of NVBRS memory devices for medical, security, internet of things (IoT), and artificial intelligence (AI) applications.
Collapse
Affiliation(s)
- Twinkle George
- Advanced Functional Nanomaterials Research Laboratory, Centre for Nanoscience and Technology, Madanjeet School of Green Energy Technologies, Pondicherry University (A Central University), Dr. R. Vankataraman Nagar, Kalapet, Puducherry605014, India
| | - Arumugam Vadivel Murugan
- Advanced Functional Nanomaterials Research Laboratory, Centre for Nanoscience and Technology, Madanjeet School of Green Energy Technologies, Pondicherry University (A Central University), Dr. R. Vankataraman Nagar, Kalapet, Puducherry605014, India
| |
Collapse
|
14
|
Wang W, Zhou G, Wang Y, Yan B, Sun B, Duan S, Song Q. Multiphotoconductance Levels of the Organic Semiconductor of Polyimide-Based Memristor Induced by Interface Charges. J Phys Chem Lett 2022; 13:9941-9949. [PMID: 36260056 DOI: 10.1021/acs.jpclett.2c02651] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
A memristor with Au/polyimide (PI)/Au structure is prepared by magnetron sputtering to investigate the multiphotoconductance resistive switching (RS) memory behavior. The PI-based memristor presents stable bipolar RS memory and is sensitive to visible light. Four discrete conductance states in both high-resistance state (HRS) and low-resistance state (LRS) are obtained when illuminating by 365, 550, 590, and 780 nm light. Electron trapping and detrapping from the defects distributed at interfaces and the PI switching layer are responsible for the observed RS memory behavior. The enhanced trapping and detrapping process by light illumination is responsible for the multiconductance states. This work provides the possibility for further development of neuromorphic vision sensors using an organic semiconductor-based memristor.
Collapse
Affiliation(s)
- Wenhua Wang
- School of Materials and Energy, Southwest University, Chongqing, Chongqing400715, China
| | - Guangdong Zhou
- College of Artificial Intelligence, Southwest University, Chongqing, Chongqing400715, China
| | - Yuchen Wang
- School of Materials and Energy, Southwest University, Chongqing, Chongqing400715, China
| | - Bingtao Yan
- College of Artificial Intelligence, Southwest University, Chongqing, Chongqing400715, China
| | - Bai Sun
- Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University, No.28, Xianning West Road, Xi'an, Shanxi710049, P.R. China
| | - Shukai Duan
- College of Artificial Intelligence, Southwest University, Chongqing, Chongqing400715, China
| | - Qunliang Song
- School of Materials and Energy, Southwest University, Chongqing, Chongqing400715, China
| |
Collapse
|
15
|
Wang J, Zhu Y, Zhu L, Chen C, Wan Q. Emerging Memristive Devices for Brain-Inspired Computing and Artificial Perception. FRONTIERS IN NANOTECHNOLOGY 2022. [DOI: 10.3389/fnano.2022.940825] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022] Open
Abstract
Brain-inspired computing is an emerging field that aims at building a compact and massively parallel architecture, to reduce power consumption in conventional Von Neumann Architecture. Recently, memristive devices have gained great attention due to their immense potential in implementing brain-inspired computing and perception. The conductance of a memristor can be modulated by a voltage pulse, enabling emulations of both essential synaptic and neuronal functions, which are considered as the important building blocks for artificial neural networks. As a result, it is critical to review recent developments of memristive devices in terms of neuromorphic computing and perception applications, waiting for new thoughts and breakthroughs. The device structures, operation mechanisms, and materials are introduced sequentially in this review; additionally, late advances in emergent neuromorphic computing and perception based on memristive devices are summed up. Finally, the challenges that memristive devices toward high-performance brain-inspired computing and perception are also briefly discussed. We believe that the advances and challenges will lead to significant advancements in artificial neural networks and intelligent humanoid robots.
Collapse
|
16
|
Dmitriyeva A, Mikheev V, Zarubin S, Chouprik A, Vinai G, Polewczyk V, Torelli P, Matveyev Y, Schlueter C, Karateev I, Yang Q, Chen Z, Tao L, Tsymbal EY, Zenkevich A. Magnetoelectric Coupling at the Ni/Hf 0.5Zr 0.5O 2 Interface. ACS NANO 2021; 15:14891-14902. [PMID: 34468129 DOI: 10.1021/acsnano.1c05001] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Composite multiferroics containing ferroelectric and ferromagnetic components often have much larger magnetoelectric coupling compared to their single-phase counterparts. Doped or alloyed HfO2-based ferroelectrics may serve as a promising component in composite multiferroic structures potentially feasible for technological applications. Recently, a strong charge-mediated magnetoelectric coupling at the Ni/HfO2 interface has been predicted using density functional theory calculations. Here, we report on the experimental evidence of such magnetoelectric coupling at the Ni/Hf0.5Zr0.5O2(HZO) interface. Using a combination of operando XAS/XMCD and HAXPES/MCDAD techniques, we probe element-selectively the local magnetic properties at the Ni/HZO interface in functional Au/Co/Ni/HZO/W capacitors and demonstrate clear evidence of the ferroelectric polarization effect on the magnetic response of a nanometer-thick Ni marker layer. The observed magnetoelectric effect and the electronic band lineup of the Ni/HZO interface are interpreted based on the results of our theoretical modeling. It elucidates the critical role of an ultrathin NiO interlayer, which controls the sign of the magnetoelectric effect as well as provides a realistic band offset at the Ni/HZO interface, in agreement with the experiment. Our results hold promise for the use of ferroelectric HfO2-based composite multiferroics for the design of multifunctional devices compatible with modern semiconductor technology.
Collapse
Affiliation(s)
- Anna Dmitriyeva
- Moscow Institute of Physics and Technology, 9, Institutskiy lane, Dolgoprudny, Moscow Region, 141700, Russia
| | - Vitalii Mikheev
- Moscow Institute of Physics and Technology, 9, Institutskiy lane, Dolgoprudny, Moscow Region, 141700, Russia
| | - Sergei Zarubin
- Moscow Institute of Physics and Technology, 9, Institutskiy lane, Dolgoprudny, Moscow Region, 141700, Russia
| | - Anastasia Chouprik
- Moscow Institute of Physics and Technology, 9, Institutskiy lane, Dolgoprudny, Moscow Region, 141700, Russia
| | - Giovanni Vinai
- Istituto Officina dei Materiali (IOM)-CNR, Laboratorio TASC, Area Science Park, S.S. 14 km 163.5, Trieste I-34149, Italy
| | - Vincent Polewczyk
- Istituto Officina dei Materiali (IOM)-CNR, Laboratorio TASC, Area Science Park, S.S. 14 km 163.5, Trieste I-34149, Italy
| | - Piero Torelli
- Istituto Officina dei Materiali (IOM)-CNR, Laboratorio TASC, Area Science Park, S.S. 14 km 163.5, Trieste I-34149, Italy
| | - Yury Matveyev
- Deutsches Elektronen-Synchrotron, 85 Notkestraße, Hamburg, D-22607, Germany
| | | | - Igor Karateev
- National Research Center "Kurchatov Institute", Moscow, 123182, Russia
| | - Qiong Yang
- School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan 411105, China
| | - Zhaojin Chen
- School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan 411105, China
| | - Lingling Tao
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States
| | - Evgeny Y Tsymbal
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States
| | - Andrei Zenkevich
- Moscow Institute of Physics and Technology, 9, Institutskiy lane, Dolgoprudny, Moscow Region, 141700, Russia
| |
Collapse
|
17
|
Chouprik A, Negrov D, Tsymbal EY, Zenkevich A. Defects in ferroelectric HfO 2. NANOSCALE 2021; 13:11635-11678. [PMID: 34190282 DOI: 10.1039/d1nr01260f] [Citation(s) in RCA: 17] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The discovery of ferroelectricity in polycrystalline thin films of doped HfO2 has reignited the expectations of developing competitive ferroelectric non-volatile memory devices. To date, it is widely accepted that the performance of HfO2-based ferroelectric devices during their life cycle is critically dependent on the presence of point defects as well as structural phase polymorphism, which mainly originates from defects either. The purpose of this review article is to overview the impact of defects in ferroelectric HfO2 on its functional properties and the resulting performance of memory devices. Starting from the brief summary of defects in classical perovskite ferroelectrics, we then introduce the known types of point defects in dielectric HfO2 thin films. Further, we discuss main analytical techniques used to characterize the concentration and distribution of defects in doped ferroelectric HfO2 thin films as well as at their interfaces with electrodes. The main part of the review is devoted to the recent experimental studies reporting the impact of defects in ferroelectric HfO2 structures on the performance of different memory devices. We end up with the summary and perspectives of HfO2-based ferroelectric competitive non-volatile memory devices.
Collapse
Affiliation(s)
- Anastasia Chouprik
- Moscow Institute of Physics and Technology, Dolgoprudny, Moscow region, Russia.
| | | | | | | |
Collapse
|
18
|
Nukala P, Ahmadi M, Wei Y, de Graaf S, Stylianidis E, Chakrabortty T, Matzen S, Zandbergen HW, Björling A, Mannix D, Carbone D, Kooi B, Noheda B. Reversible oxygen migration and phase transitions in hafnia-based ferroelectric devices. Science 2021; 372:630-635. [PMID: 33858991 DOI: 10.1126/science.abf3789] [Citation(s) in RCA: 60] [Impact Index Per Article: 20.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/22/2020] [Accepted: 04/02/2021] [Indexed: 01/25/2023]
Abstract
Unconventional ferroelectricity exhibited by hafnia-based thin films-robust at nanoscale sizes-presents tremendous opportunities in nanoelectronics. However, the exact nature of polarization switching remains controversial. We investigated a La0.67Sr0.33MnO3/Hf0.5Zr0.5O2 capacitor interfaced with various top electrodes while performing in situ electrical biasing using atomic-resolution microscopy with direct oxygen imaging as well as with synchrotron nanobeam diffraction. When the top electrode is oxygen reactive, we observe reversible oxygen vacancy migration with electrodes as the source and sink of oxygen and the dielectric layer acting as a fast conduit at millisecond time scales. With nonreactive top electrodes and at longer time scales (seconds), the dielectric layer also acts as an oxygen source and sink. Our results show that ferroelectricity in hafnia-based thin films is unmistakably intertwined with oxygen voltammetry.
Collapse
Affiliation(s)
- Pavan Nukala
- Zernike Institute of Advanced Materials, University of Groningen, 9747 AG Groningen, Netherlands. .,Centre for Nano Science and Engineering, Indian Institute of Science, Bengaluru, 560012, India
| | - Majid Ahmadi
- Zernike Institute of Advanced Materials, University of Groningen, 9747 AG Groningen, Netherlands.,CogniGron (Groningen Cognitive Systems and Materials Center), University of Groningen, 9747 AG Groningen, Netherlands
| | - Yingfen Wei
- Zernike Institute of Advanced Materials, University of Groningen, 9747 AG Groningen, Netherlands.,CogniGron (Groningen Cognitive Systems and Materials Center), University of Groningen, 9747 AG Groningen, Netherlands
| | - Sytze de Graaf
- Zernike Institute of Advanced Materials, University of Groningen, 9747 AG Groningen, Netherlands
| | - Evgenios Stylianidis
- Zernike Institute of Advanced Materials, University of Groningen, 9747 AG Groningen, Netherlands.,Department of Physics and Astronomy, University College London, London WC1E 6BT, UK
| | - Tuhin Chakrabortty
- Centre for Nano Science and Engineering, Indian Institute of Science, Bengaluru, 560012, India
| | - Sylvia Matzen
- Center for Nanoscience and Nanotechnology, Paris-Saclay University, CNRS, 91120 Palaiseau, France
| | - Henny W Zandbergen
- Kavli Institute of Nanoscience, Faculty of Applied Sciences, Delft University of Technology, 2628 CJ Delft, Netherlands
| | | | - Dan Mannix
- University Grenoble Alpes, CNRS, Institut Néel, 38042 Grenoble, France.,European Spallation Source, SE-221 00 Lund, Sweden.,Department of Chemistry, Aarhus University, DK-8000 Aarhus, Denmark
| | - Dina Carbone
- MAX IV Laboratory, Lund University, SE-221 00 Lund, Sweden
| | - Bart Kooi
- Zernike Institute of Advanced Materials, University of Groningen, 9747 AG Groningen, Netherlands.,CogniGron (Groningen Cognitive Systems and Materials Center), University of Groningen, 9747 AG Groningen, Netherlands
| | - Beatriz Noheda
- Zernike Institute of Advanced Materials, University of Groningen, 9747 AG Groningen, Netherlands. .,CogniGron (Groningen Cognitive Systems and Materials Center), University of Groningen, 9747 AG Groningen, Netherlands
| |
Collapse
|
19
|
Athle R, Persson AEO, Irish A, Menon H, Timm R, Borg M. Effects of TiN Top Electrode Texturing on Ferroelectricity in Hf 1-xZr xO 2. ACS APPLIED MATERIALS & INTERFACES 2021; 13:11089-11095. [PMID: 33625827 PMCID: PMC8027987 DOI: 10.1021/acsami.1c01734] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/17/2023]
Abstract
Ferroelectric memories based on hafnium oxide are an attractive alternative to conventional memory technologies due to their scalability and energy efficiency. However, there are still many open questions regarding the optimal material stack and processing conditions for reliable device performance. Here, we report on the impact of the sputtering process conditions of the commonly used TiN top electrode on the ferroelectric properties of Hf1-xZrxO2. By manipulating the deposition pressure and chemistry, we control the preferential orientation of the TiN grains between (111) and (002). We observe that (111) textured TiN is superior to (002) texturing for achieving high remanent polarization (Pr). Furthermore, we find that additional nitrogen supply during TiN deposition leads to >5× greater endurance, possibly by limiting the scavenging of oxygen from the Hf1-xZrxO2 film. These results help explain the large Pr variation reported in the literature for Hf1-xZrxO2/TiN and highlights the necessity of tuning the top electrode of the ferroelectric stack for successful device implementation.
Collapse
Affiliation(s)
- Robin Athle
- Electrical
and Information Technology, Lund University, Box 118, 22 100 Lund, Sweden
- NanoLund
Lund University, Box 118, 22 100 Lund, Sweden
| | - Anton E. O. Persson
- Electrical
and Information Technology, Lund University, Box 118, 22 100 Lund, Sweden
| | - Austin Irish
- Division
of Synchrotron Radiation Research, Lund
University, Box 118, 22
100 Lund, Sweden
- NanoLund
Lund University, Box 118, 22 100 Lund, Sweden
| | - Heera Menon
- Electrical
and Information Technology, Lund University, Box 118, 22 100 Lund, Sweden
- NanoLund
Lund University, Box 118, 22 100 Lund, Sweden
| | - Rainer Timm
- Division
of Synchrotron Radiation Research, Lund
University, Box 118, 22
100 Lund, Sweden
- NanoLund
Lund University, Box 118, 22 100 Lund, Sweden
| | - Mattias Borg
- Electrical
and Information Technology, Lund University, Box 118, 22 100 Lund, Sweden
- NanoLund
Lund University, Box 118, 22 100 Lund, Sweden
| |
Collapse
|
20
|
Choi S, Yang J, Wang G. Emerging Memristive Artificial Synapses and Neurons for Energy-Efficient Neuromorphic Computing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2004659. [PMID: 33006204 DOI: 10.1002/adma.202004659] [Citation(s) in RCA: 77] [Impact Index Per Article: 19.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/08/2020] [Revised: 08/12/2020] [Indexed: 06/11/2023]
Abstract
Memristors have recently attracted significant interest due to their applicability as promising building blocks of neuromorphic computing and electronic systems. The dynamic reconfiguration of memristors, which is based on the history of applied electrical stimuli, can mimic both essential analog synaptic and neuronal functionalities. These can be utilized as the node and terminal devices in an artificial neural network. Consequently, the ability to understand, control, and utilize fundamental switching principles and various types of device architectures of the memristor is necessary for achieving memristor-based neuromorphic hardware systems. Herein, a wide range of memristors and memristive-related devices for artificial synapses and neurons is highlighted. The device structures, switching principles, and the applications of essential synaptic and neuronal functionalities are sequentially presented. Moreover, recent advances in memristive artificial neural networks and their hardware implementations are introduced along with an overview of the various learning algorithms. Finally, the main challenges of the memristive synapses and neurons toward high-performance and energy-efficient neuromorphic computing are briefly discussed. This progress report aims to be an insightful guide for the research on memristors and neuromorphic-based computing.
Collapse
Affiliation(s)
- Sanghyeon Choi
- KU-KIST Graduate School of Converging Science and Technology, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
| | - Jehyeon Yang
- KU-KIST Graduate School of Converging Science and Technology, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
| | - Gunuk Wang
- KU-KIST Graduate School of Converging Science and Technology, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
| |
Collapse
|
21
|
Wang H, Lu W, Hou S, Yu B, Zhou Z, Xue Y, Guo R, Wang S, Zeng K, Yan X. A 2D-SnSe film with ferroelectricity and its bio-realistic synapse application. NANOSCALE 2020; 12:21913-21922. [PMID: 33112322 DOI: 10.1039/d0nr03724a] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Catering to the general trend of artificial intelligence development, simulating humans' learning and thinking behavior has become the research focus. Second-order memristors, which are more analogous to biological synapses, are the most promising devices currently used in neuromorphic/brain-like computing. However, few second-order memristors based on two-dimensional (2D) materials have been reported, and the inherent bionic physics needs to be explored. In this work, a second-order memristor based on 2D SnSe films was fabricated by the pulsed laser deposition technique. The continuously adjustable conductance of Au/SnSe/NSTO structures was achieved by gradually switching the polarization of a ferroelectric SnSe layer. The experimental results show that the bio-synaptic functions, including spike-timing-dependent plasticity, short-term plasticity and long-term plasticity, can be simulated using this two-terminal devices. Moreover, stimulus pulses with nanosecond pulse duration were applied to the device to emulate rapid learning and long-term memory in the human brain. The observed memristive behavior is mainly attributed to the modulation of the width of the depletion layer and barrier height is affected, at the SnSe/NSTO interface, by the reversal of ferroelectric polarization of SnSe materials. The device energy consumption is as low as 66 fJ, being expected to be applied to miniaturized, high-density, low-power neuromorphic computing.
Collapse
Affiliation(s)
- Hong Wang
- Key Laboratory of Optoelectronic Information Materials of Hebei Province, Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, Hebei University, Baoding 071002, China.
| | | | | | | | | | | | | | | | | | | |
Collapse
|
22
|
Guo J, Liu Y, Li Y, Li F, Huang F. Bienenstock-Cooper-Munro Learning Rule Realized in Polysaccharide-Gated Synaptic Transistors with Tunable Threshold. ACS APPLIED MATERIALS & INTERFACES 2020; 12:50061-50067. [PMID: 33105079 DOI: 10.1021/acsami.0c14325] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
With reference to the organization of the human brain nervous system, a hardware-based approach that builds massively parallel neuromorphic circuits is of great significance to neuromorphic computing. The Bienenstock-Cooper-Munro (BCM) learning rule, which describes that the synaptic weight modulation exhibits frequency-dependent and tunable frequency threshold characteristics, is more compatible with the working principle of neuromorphic computing systems than spike-timing-dependent plasticity. Therefore, it is interesting to simulate the BCM learning rule on solid-state synaptic devices. Here, we have prepared λ-carrageenan (λ-car) electrolyte-gated oxide synaptic transistors, which exhibit good transistor performances, including a low subthreshold swing of 125 mV/dec, an on/off ratio larger than 106, and a mobility of 9.5 cm2 V-1 s-1. By modulating the initial channel current and spike frequency, the simulation of the BCM rule was successfully realized. The competitive relationship between the drift of protons under an electric field and the spontaneous diffusion of protons can explain this mechanism. The proposed λ-car-gated synaptic transistor has a great significance to neuromorphic computing.
Collapse
Affiliation(s)
- Jianmiao Guo
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Guangzhou, Guangdong 510275, China
| | - Yanghui Liu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Guangzhou, Guangdong 510275, China
| | - Yingtao Li
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Guangzhou, Guangdong 510275, China
| | - Fangzhou Li
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Guangzhou, Guangdong 510275, China
| | - Feng Huang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Guangzhou, Guangdong 510275, China
| |
Collapse
|
23
|
Ebenhoch C, Kalb J, Lim J, Seewald T, Scheu C, Schmidt-Mende L. Hydrothermally Grown TiO 2 Nanorod Array Memristors with Volatile States. ACS APPLIED MATERIALS & INTERFACES 2020; 12:23363-23369. [PMID: 32321245 DOI: 10.1021/acsami.0c05164] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
In the present study, the memristive characteristics of hydrothermally grown TiO2 nanorod arrays, particularly, the difference in the retention time of the resistance state, are investigated in dependence of the array growth temperature. A volatile behavior is observed and related to a redistribution of oxygen vacancies over time. It is shown that the retention time increases for increasing array growth temperatures from several seconds up to 20 min. The relaxation behavior is also seen in the current-voltage characteristics, which do not show the common unipolar, bipolar, or complementary switching behavior. Instead, the temporal evolution depends on the duration of the applied voltage and on the nanowire growth temperature. Therefore, electronic measurements are combined with scanning electron and scanning transmission electron microscopy, so that the amount of oxygen defect-rich grain boundaries in the upper part of the nanowires can be linked to the differences in the current-voltage behavior and retention time.
Collapse
Affiliation(s)
- Carola Ebenhoch
- Department of Physics, University of Konstanz, 78457 Konstanz, Germany
| | - Julian Kalb
- Department of Physics, University of Konstanz, 78457 Konstanz, Germany
| | - Joohyun Lim
- Max-Planck-Institut für Eisenforschung GmbH, Max-Planck-Straße 1, 40237 Düsseldorf, Germany
| | - Tobias Seewald
- Department of Physics, University of Konstanz, 78457 Konstanz, Germany
| | - Christina Scheu
- Max-Planck-Institut für Eisenforschung GmbH, Max-Planck-Straße 1, 40237 Düsseldorf, Germany
| | | |
Collapse
|
24
|
Mikheev V, Chouprik A, Lebedinskii Y, Zarubin S, Markeev AM, Zenkevich AV, Negrov D. Memristor with a ferroelectric HfO 2 layer: in which case it is a ferroelectric tunnel junction. NANOTECHNOLOGY 2020; 31:215205. [PMID: 32040945 DOI: 10.1088/1361-6528/ab746d] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
New interest in the implementation of ferroelectric tunnel junctions has emerged following the discovery of ferroelectric properties in HfO2 films, which are fully compatible with silicon microelectronics technology. The coercive electric field to switch polarization direction in ferroelectric HfO2 is relatively high compared to classical perovskite materials, and thus it can cause the migration of non-ferroelectric charges in HfO2, namely charged oxygen vacancies. The charge redistribution would cause the change of the tunnel barrier shape and following change of the electroresistance effect. In the case of ambiguous ferroelectric properties of HfO2 ultrathin films, this oxygen-driven resistive switching effect can mimic the tunnel electroresistance effect. Here, we demonstrate two separate resistive switching regimes, depending on the applied voltage, in the same memristor device employing a ferroelectric Hf0.5Zr0.5O2 (4.5 nm) layer. The first regime originates from the polarization reversal, whereas the second one is attributed to the accumulation/depletion of the oxygen vacancies at the electrode interface. The modulation of the tunnel barrier causes the enhancement of R OFF/R ON ratio in ∼20 times compared to the tunnel electroresistance effect. The developed device was used to formulate the criteria for unambiguous discrimination between the ferroelectric-and non-ferroelectric resistive switching effects in HfO2-based ferroelectric tunnel junctions.
Collapse
Affiliation(s)
- V Mikheev
- Moscow Institute of Physics and Technology, Dolgoprudny, Russia
| | | | | | | | | | | | | |
Collapse
|