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Fu Q, Dai J, Huang X, Dai Y, Pan Y, Yang L, Sun Z, Miao T, Zhou M, Zhao L, Zhao W, Han X, Lu J, Gao H, Zhou X, Wang Y, Ni Z, Ji W, Huang Y. One-Step Exfoliation Method for Plasmonic Activation of Large-Area 2D Crystals. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2204247. [PMID: 36104244 PMCID: PMC9661865 DOI: 10.1002/advs.202204247] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/08/2022] [Indexed: 06/01/2023]
Abstract
Advanced exfoliation techniques are crucial for exploring the intrinsic properties and applications of 2D materials. Though the recently discovered Au-enhanced exfoliation technique provides an effective strategy for the preparation of large-scale 2D crystals, the high cost of gold hinders this method from being widely adopted in industrial applications. In addition, direct Au contact could significantly quench photoluminescence (PL) emission in 2D semiconductors. It is therefore crucial to find alternative metals that can replace gold to achieve efficient exfoliation of 2D materials. Here, the authors present a one-step Ag-assisted method that can efficiently exfoliate many large-area 2D monolayers, where the yield ratio is comparable to Au-enhanced exfoliation method. Differing from Au film, however, the surface roughness of as-prepared Ag films on SiO2 /Si substrate is much higher, which facilitates the generation of surface plasmons resulting from the nanostructures formed on the rough Ag surface. More interestingly, the strong coupling between 2D semiconductor crystals (e.g., MoS2 , MoSe2 ) and Ag film leads to a unique PL enhancement that has not been observed in other mechanical exfoliation techniques, which can be mainly attributed to enhanced light-matter interaction as a result of extended propagation of surface plasmonic polariton (SPP). This work provides a lower-cost and universal Ag-assisted exfoliation method, while at the same time offering enhanced SPP-matter interactions.
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Affiliation(s)
- Qiang Fu
- Advanced Research Institute of Multidisciplinary ScienceBeijing Institute of TechnologyBeijing100081P. R. China
- School of Physics and Key Laboratory of MEMS of the Ministry of EducationSoutheast UniversityNanjing211189P. R. China
- Institute of PhysicsChinese Academy of ScienceBeijing100190P. R. China
| | - Jia‐Qi Dai
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro‐Nano DevicesRenmin University of ChinaBeijing100872P. R. China
| | - Xin‐Yu Huang
- Advanced Research Institute of Multidisciplinary ScienceBeijing Institute of TechnologyBeijing100081P. R. China
| | - Yun‐Yun Dai
- Advanced Research Institute of Multidisciplinary ScienceBeijing Institute of TechnologyBeijing100081P. R. China
| | - Yu‐Hao Pan
- China North Vehicle Research InstituteBeijing100072P. R. China
| | - Long‐Long Yang
- Institute of PhysicsChinese Academy of ScienceBeijing100190P. R. China
| | - Zhen‐Yu Sun
- Institute of PhysicsChinese Academy of ScienceBeijing100190P. R. China
| | - Tai‐Min Miao
- Institute of PhysicsChinese Academy of ScienceBeijing100190P. R. China
| | - Meng‐Fan Zhou
- School of Physics and Key Laboratory of MEMS of the Ministry of EducationSoutheast UniversityNanjing211189P. R. China
| | - Lin Zhao
- Institute of PhysicsChinese Academy of ScienceBeijing100190P. R. China
- Songshan Lake Materials LaboratoryDongguan523808P. R. China
| | - Wei‐Jie Zhao
- School of Physics and Key Laboratory of MEMS of the Ministry of EducationSoutheast UniversityNanjing211189P. R. China
| | - Xu Han
- Advanced Research Institute of Multidisciplinary ScienceBeijing Institute of TechnologyBeijing100081P. R. China
- Institute of PhysicsChinese Academy of ScienceBeijing100190P. R. China
| | - Jun‐Peng Lu
- School of Physics and Key Laboratory of MEMS of the Ministry of EducationSoutheast UniversityNanjing211189P. R. China
| | - Hong‐Jun Gao
- Institute of PhysicsChinese Academy of ScienceBeijing100190P. R. China
- University of Chinese Academy of SciencesBeijing100049P. R. China
| | - Xing‐Jiang Zhou
- Institute of PhysicsChinese Academy of ScienceBeijing100190P. R. China
- Songshan Lake Materials LaboratoryDongguan523808P. R. China
- University of Chinese Academy of SciencesBeijing100049P. R. China
| | - Ye‐Liang Wang
- Advanced Research Institute of Multidisciplinary ScienceBeijing Institute of TechnologyBeijing100081P. R. China
| | - Zhen‐Hua Ni
- School of Physics and Key Laboratory of MEMS of the Ministry of EducationSoutheast UniversityNanjing211189P. R. China
| | - Wei Ji
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro‐Nano DevicesRenmin University of ChinaBeijing100872P. R. China
| | - Yuan Huang
- Advanced Research Institute of Multidisciplinary ScienceBeijing Institute of TechnologyBeijing100081P. R. China
- Institute of PhysicsChinese Academy of ScienceBeijing100190P. R. China
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Alzakia FI, Tan SC. Liquid-Exfoliated 2D Materials for Optoelectronic Applications. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:e2003864. [PMID: 34105282 PMCID: PMC8188210 DOI: 10.1002/advs.202003864] [Citation(s) in RCA: 33] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/12/2020] [Revised: 01/19/2021] [Indexed: 05/14/2023]
Abstract
Two-dimensional (2D) materials have attracted tremendous research attention in recent days due to their extraordinary and unique properties upon exfoliation from the bulk form, which are useful for many applications such as electronics, optoelectronics, catalysis, etc. Liquid exfoliation method of 2D materials offers a facile and low-cost route to produce large quantities of mono- and few-layer 2D nanosheets in a commercially viable way. Optoelectronic devices such as photodetectors fabricated from percolating networks of liquid-exfoliated 2D materials offer advantages compared to conventional devices, including low cost, less complicated process, and higher flexibility, making them more suitable for the next generation wearable devices. This review summarizes the recent progress on metal-semiconductor-metal (MSM) photodetectors fabricated from percolating network of 2D nanosheets obtained from liquid exfoliation methods. In addition, hybrids and mixtures with other photosensitive materials, such as quantum dots, nanowires, nanorods, etc. are also discussed. First, the various methods of liquid exfoliation of 2D materials, size selection methods, and photodetection mechanisms that are responsible for light detection in networks of 2D nanosheets are briefly reviewed. At the end, some potential strategies to further improve the performance the devices are proposed.
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Affiliation(s)
- Fuad Indra Alzakia
- Department of Materials Science and EngineeringNational University of Singapore9 Engineering drive 1Singapore117574Singapore
| | - Swee Ching Tan
- Department of Materials Science and EngineeringNational University of Singapore9 Engineering drive 1Singapore117574Singapore
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Jang AR, Yoon J, Son SB, Ryu HI, Cho J, Shin KH, Sohn JI, Hong WK. Phase Transition-Induced Temperature-Dependent Phonon Shifts in Molybdenum Disulfide Monolayers Interfaced with a Vanadium Dioxide Film. ACS APPLIED MATERIALS & INTERFACES 2021; 13:3426-3434. [PMID: 33410322 DOI: 10.1021/acsami.0c19555] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
We report the optical phonon shifts induced by phase transition effects of vanadium dioxide (VO2) in monolayer molybdenum disulfide (MoS2) when interfacing with a VO2 film showing a metal-insulator transition coupled with structural phase transition (SPT). To this end, the monolayer MoS2 directly synthesized on a SiO2/Si substrate by chemical vapor deposition was first transferred onto a VO2/c-Al2O3 substrate in which the VO2 film was prepared by a sputtering method. We compared the MoS2 interfaced with the VO2 film with the as-synthesized MoS2 by using Raman spectroscopy. The temperature-dependent Raman scattering characteristics exhibited the distinct phonon behaviors of the E2g1 and A1g modes in the monolayer MoS2. Specifically, for the as-synthesized MoS2, there were no Raman shifts for each mode, but the enhancement in the Raman intensities of E2g1 and A1g modes was clearly observed with increasing temperature, which could be interpreted by the significant contribution of the interface optical interference effect. In contrast, the red-shifts of both the E2g1 and A1g modes for the MoS2 transferred onto VO2 were clearly observed across the phase transition of VO2, which could be explained in terms of the in-plane tensile strain effect induced by the SPT and the enhancement of electron-phonon interactions due to an increased electron density at the MoS2/VO2 interface through the electronic phase transition. This study provides further insights into the influence of interfacial hybridization for the heterogeneous integration of 2D transition-metal dichalcogenides and strongly correlated materials.
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Affiliation(s)
- A-Rang Jang
- Department of Electrical Engineering, Semyung University, Jecheon 27136, Republic of Korea
| | - Jongwon Yoon
- Jeonju Center, Korea Basic Science Institute, Jeonju, Jeollabukdo 54907, Republic of Korea
| | - Seung-Bae Son
- Division of Advanced Materials Engineering, Jeonbuk National University, Jeonju, Jeollabukdo 54896, Republic of Korea
| | - Hyeon Ih Ryu
- Jeonju Center, Korea Basic Science Institute, Jeonju, Jeollabukdo 54907, Republic of Korea
| | - Jiung Cho
- Western Seoul Center, Korea Basic Science Institute, Seoul 03759, Republic of Korea
| | - Ki-Hoon Shin
- Division of Physics and Semiconductor Science, Dongguk University-Seoul, Seoul 04620, Republic of Korea
| | - Jung Inn Sohn
- Division of Physics and Semiconductor Science, Dongguk University-Seoul, Seoul 04620, Republic of Korea
| | - Woong-Ki Hong
- Center for Scientific Instrumentation, Korea Basic Science Institute, Daejeon 34133, Republic of Korea
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Cao Q, Xiao Y, Huang R, Liu N, Chi H, Lin CT, Huang CH, Han G, Wu L. Thiolated poly(aspartic acid)-functionalized two-dimensional MoS 2, chitosan and bismuth film as a sensor platform for cadmium ion detection. RSC Adv 2020; 10:37989-37994. [PMID: 35515180 PMCID: PMC9057193 DOI: 10.1039/d0ra06197b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/16/2020] [Accepted: 10/06/2020] [Indexed: 11/21/2022] Open
Abstract
In this work, a sensitive electrochemical platform for determination of cadmium ions (Cd2+) is obtained using thiolated poly(aspartic acid) (TPA)-functionalized MoS2 as a sensor platform by differential pulse anodic stripping voltammetry (DPASV). The performance of the TPA-MoS2-modified sensor is systemically studied. It demonstrates that the TPA-MoS2 nanocomposite modified sensor exhibits superior analytical performance for Cd2+ over a linear range from 0.5 μg L-1 to 50 μg L-1, with a detection limit of 0.17 μg L-1. Chitosan is able to form a continuous coating film on the surface of the GC electrode. The good sensing performance of the TPA-MoS2-modified sensor may be attributed to the following factors: the large surface area of MoS2 (603 m2 g-1), and the abundant thiol groups of TPA. Thus, the TPA-MoS2-modified sensor proves to be a reliable and environmentally friendly tool for the effective monitoring of Cd2+ existing in aquacultural environments.
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Affiliation(s)
- Qiang Cao
- Key Laboratory of Control of Quality and Safety for Aquatic Products, Chinese Academy of Fishery Sciences Beijing 100141 China +86-10-68690712 +86-10-68690712
- Shanghai Ocean University Shanghai 201306 China
| | - Yushi Xiao
- Key Laboratory of Control of Quality and Safety for Aquatic Products, Chinese Academy of Fishery Sciences Beijing 100141 China +86-10-68690712 +86-10-68690712
- Shanghai Ocean University Shanghai 201306 China
| | - Rong Huang
- Key Laboratory of Control of Quality and Safety for Aquatic Products, Chinese Academy of Fishery Sciences Beijing 100141 China +86-10-68690712 +86-10-68690712
- Beijing Engineering and Technology Research Center of Food Additives, Beijing Technology and Business University (BTBU) Beijing 100048 China
| | - Na Liu
- Key Laboratory of Control of Quality and Safety for Aquatic Products, Chinese Academy of Fishery Sciences Beijing 100141 China +86-10-68690712 +86-10-68690712
- Shanghai Ocean University Shanghai 201306 China
| | - Hai Chi
- East China Sea Fisheries Research Institute, Chinese Academy of Fishery Sciences Shanghai 201306 China
| | - Cheng-Te Lin
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences Ningbo 315201 China
| | - Chi-Hsien Huang
- Department of Materials Engineering, Mingchi University of Technology 243303 Taiwan
| | - Gang Han
- Key Laboratory of Control of Quality and Safety for Aquatic Products, Chinese Academy of Fishery Sciences Beijing 100141 China +86-10-68690712 +86-10-68690712
| | - Lidong Wu
- Key Laboratory of Control of Quality and Safety for Aquatic Products, Chinese Academy of Fishery Sciences Beijing 100141 China +86-10-68690712 +86-10-68690712
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Alzakia FI, Jonhson W, Ding J, Tan SC. Ultrafast Exfoliation of 2D Materials by Solvent Activation and One-Step Fabrication of All-2D-Material Photodetectors by Electrohydrodynamic Printing. ACS APPLIED MATERIALS & INTERFACES 2020; 12:28840-28851. [PMID: 32469199 DOI: 10.1021/acsami.0c06279] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Large-scale liquid exfoliation of two-dimensional materials such as molybdenum disulfide, tungsten disulfide, and graphene for the synthesis of printable inks is still inefficient due to many hours of exfoliation time needed to achieve a highly concentrated dispersion that is useful for printing. Here, we report that soaking the bulk 2D material powders in a variety of solvents (water, ethanol, isopropanol, acetone, methanol, dimethylformamide, N-methyl pyrrolidone, and hexane) briefly as short as 5 min "activates" them to be much more easily exfoliated afterward. The unsoaked powder yielded a negligible concentration of dispersed nanosheets (less than 0.01 mg/mL) even after long hours of sonication, while the powders soaked in water resulted in dispersed nanosheets of 1.21 mg/mL for MoS2 and 1.28 mg/mL for WS2 after 6 and 4 h of sonication, respectively, a more than 100 time increase. For graphene, soaking in methanol for 5 min prior to sonication for 6 h yielded an increase in the dispersed nanosheet concentration to 0.13 mg/mL, a more than 10 time increase in concentration. The enhanced exfoliation is originated not from the intercalated solvent molecules but from the slightly increased d-spacing of the bulk powders during soaking due to the different dielectric environments in the solvents, which assists in the exfoliation afterward. We further fabricated MoS2 and WS2 photodetectors with graphene as electrodes by one-step electrohydrodynamic (EHD) printing using highly concentrated inks (>2 mg/mL) obtained by ultrafast liquid exfoliation, which have light sensitivity down to 0.05 sun. We believe that this ultrafast exfoliation technique combined with the one-step device printing technique enables a big step toward the mass production of functional devices fabricated from solution-processed 2D material inks.
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Affiliation(s)
- Fuad Indra Alzakia
- Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117574
| | - Win Jonhson
- Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117574
| | - Jun Ding
- Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117574
| | - Swee Ching Tan
- Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117574
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