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Li M, Fang Y, Shao S, Wang X, Chen Z, Li J, Gu W, Yang W, Xu W, Wang H, Zhao J. Fully-Solution-Processed Enhancement-Mode Complementary Metal-Oxide-Semiconductor Carbon Nanotube Thin Film Transistors Based on BiI 3 -Doped Crosslinked Poly(4-Vinylphenol) Dielectrics for Ultralow-Power Flexible Electronics. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2207311. [PMID: 36782084 DOI: 10.1002/smll.202207311] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/23/2022] [Revised: 02/02/2023] [Indexed: 05/18/2023]
Abstract
The threshold voltage (Vth ) adjustment of complementary metal-oxide-semiconductor (CMOS) thin film transistors (TFTs) is one of the research hotspots due to its key role in energy consumption control of CMOS circuits. Here, ultralow-power flexible CMOS circuits based on well-matched enhancement-mode (E-mode) CMOS single-walled carbon nanotube (SWCNT) TFTs are successfully achieved through tuning the work function of gate electrodes, electron doping, and printing techniques. E-mode P-type CMOS SWCNT TFTs with the full-solution procedure are first obtained through decreasing the work function of Ag gate electrodes directly caused by the deposition of bismuth iodide (BiI3 )-doped solid-state electrolyte dielectrics. After synthetic optimization of dielectric compositions and semiconductor printing process, the flexible printed E-mode SWCNT TFTs show the high Ion /Ioff ratios of ≈106 , small subthreshold swing (SS) of 70-85 mV dec-1 , low operating voltages of ≈0.5 to -1.5 V, good stability and excellent mechanical flexibility during 10 000 bending cycles. E-mode N-type SWCNT TFTs are then selectively achieved via printing the polarity conversion ink (2-Amino-2-methyl-1-propanol (AMP) as electron doping agent) in P- type TFT channels. Last, printed SWCNT CMOS inverters are successfully constructed with full rail-to-rail output characteristics and the record unit static power consumption of 6.75 fW µm-1 at VDD of 0.2 V.
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Affiliation(s)
- Min Li
- Key Laboratory of Interface Science and Engineering in Advanced Materials of Ministry of Education, Taiyuan University of Technology, NO.79, Yingze West Main Street, Taiyuan, Shanxi, 030024, P. R. China
- Printable Electronics Research Center, Division of Nanodevices and Related Nanomaterials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu, 215123, P. R. China
| | - Yuxiao Fang
- Printable Electronics Research Center, Division of Nanodevices and Related Nanomaterials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu, 215123, P. R. China
- School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei, Anhui, 230026, P. R. China
| | - Shuangshuang Shao
- Printable Electronics Research Center, Division of Nanodevices and Related Nanomaterials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu, 215123, P. R. China
- School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei, Anhui, 230026, P. R. China
| | - Xin Wang
- Printable Electronics Research Center, Division of Nanodevices and Related Nanomaterials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu, 215123, P. R. China
| | - Zhaofeng Chen
- Printable Electronics Research Center, Division of Nanodevices and Related Nanomaterials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu, 215123, P. R. China
| | - Jiaqi Li
- Printable Electronics Research Center, Division of Nanodevices and Related Nanomaterials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu, 215123, P. R. China
- School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei, Anhui, 230026, P. R. China
| | - Weibing Gu
- Printable Electronics Research Center, Division of Nanodevices and Related Nanomaterials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu, 215123, P. R. China
- School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei, Anhui, 230026, P. R. China
| | - Wenming Yang
- School of Materials Science and Engineering, Jiangsu University, Zhenjiang, Jiangsu, 212013, P. R. China
| | - Wanzhen Xu
- School of the Environment and Safety Engineering, Jiangsu University, Zhenjiang, Jiangsu, 212013, P. R. China
| | - Hua Wang
- Key Laboratory of Interface Science and Engineering in Advanced Materials of Ministry of Education, Taiyuan University of Technology, NO.79, Yingze West Main Street, Taiyuan, Shanxi, 030024, P. R. China
| | - Jianwen Zhao
- Printable Electronics Research Center, Division of Nanodevices and Related Nanomaterials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu, 215123, P. R. China
- School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei, Anhui, 230026, P. R. China
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Lu S, Smith BN, Meikle H, Therien MJ, Franklin AD. All-Carbon Thin-Film Transistors Using Water-Only Printing. NANO LETTERS 2023; 23:2100-2106. [PMID: 36853199 DOI: 10.1021/acs.nanolett.2c04196] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Printing thin-film transistors (TFTs) using nanomaterials is a promising approach for future electronics. Yet, most inks rely on environmentally harmful solvents for solubilizing and postprint processing the nanomaterials. In this work, we demonstrate water-only TFTs printed from all-carbon inks of semiconducting carbon nanotubes (CNTs), conducting graphene, and insulating crystalline nanocellulose (CNC). While suspending these nanomaterials into aqueous inks is readily achieved, printing the inks into thin films of sufficient surface coverage and in multilayer stacks to form TFTs has proven elusive without high temperatures, hazardous chemicals, and/or lengthy postprocessing. Using aerosol jet printing, our approach involves a maximum temperature of 70 °C and no hazardous chemicals─all inks are aqueous and only water is used for processing. An intermittent rinsing technique was utilized to address the surface adhesion challenges that limit film density of printed aqueous CNTs. These findings provide promising steps toward an environmentally friendly realization of thin-film electronics.
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Affiliation(s)
- Shiheng Lu
- Department of Electrical and Computer Engineering, Duke University, Durham, North Carolina 27708, United States
| | - Brittany N Smith
- Department of Electrical and Computer Engineering, Duke University, Durham, North Carolina 27708, United States
| | - Hope Meikle
- Department of Electrical and Computer Engineering, Duke University, Durham, North Carolina 27708, United States
- Department of Chemistry, Duke University, Durham, North Carolina 27708, United States
| | - Michael J Therien
- Department of Chemistry, Duke University, Durham, North Carolina 27708, United States
| | - Aaron D Franklin
- Department of Electrical and Computer Engineering, Duke University, Durham, North Carolina 27708, United States
- Department of Chemistry, Duke University, Durham, North Carolina 27708, United States
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Smith BN, Meikle H, Doherty JL, Lu S, Tutoni G, Becker ML, Therien MJ, Franklin AD. Ionic dielectrics for fully printed carbon nanotube transistors: impact of composition and induced stresses. NANOSCALE 2022; 14:16845-16856. [PMID: 36331392 PMCID: PMC9719746 DOI: 10.1039/d2nr04206a] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
Printed carbon nanotube thin-film transistors (CNT-TFTs) are candidates for flexible electronics with printability on a wide range of substrates. Among the layers comprising a CNT-TFT, the gate dielectric has proven most difficult to additively print owing to challenges in film uniformity, thickness, and post-processing requirements. Printed ionic dielectrics show promise for addressing these issues and yielding devices that operate at low voltages thanks to their high-capacitance electric double layers. However, the printing of ionic dielectrics in their various compositions is not well understood, nor is the impact of certain stresses on these materials. In this work, we studied three compositionally distinct ionic dielectrics in fully printed CNT-TFTs: the polar-fluorinated polymer elastomer PVDF-HFP; an ion gel consisting of triblock polymer PS-PMMA-PS and ionic liquid EMIM-TFSI; and crystalline nanocellulose (CNC) with a salt concentration of 0.05%. Although ion gel has been thoroughly studied, e-PVDF-HFP and CNC printing are relatively new and this study provides insights into their ink formulation, print processing, and performance as gate dielectrics. Using a consistent aerosol jet printing approach, each ionic dielectric was printed into similar CNT-TFTs, allowing for direct comparison through extensive characterization, including mechanical and electrical stress tests. The ionic dielectrics were found to have distinct operational dependencies based on their compositional and ionic attributes. Overall, the results reveal a number of trade-offs that must be managed when selecting a printable ionic dielectric, with CNC showing the strongest performance for low-voltage operation but the ion gel and elastomer exhibiting better stability under bias and mechanical stresses.
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Affiliation(s)
- Brittany N Smith
- Department of Electrical and Computer Engineering, Duke University, Durham, NC 27708, USA.
| | - Hope Meikle
- Department of Electrical and Computer Engineering, Duke University, Durham, NC 27708, USA.
- Department of Chemistry, Duke University, Durham, NC 27708, USA
| | - James L Doherty
- Department of Electrical and Computer Engineering, Duke University, Durham, NC 27708, USA.
| | - Shiheng Lu
- Department of Electrical and Computer Engineering, Duke University, Durham, NC 27708, USA.
| | - Gianna Tutoni
- Department of Chemistry, Duke University, Durham, NC 27708, USA
| | | | | | - Aaron D Franklin
- Department of Electrical and Computer Engineering, Duke University, Durham, NC 27708, USA.
- Department of Chemistry, Duke University, Durham, NC 27708, USA
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4
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Torricelli F, Adrahtas DZ, Bao Z, Berggren M, Biscarini F, Bonfiglio A, Bortolotti CA, Frisbie CD, Macchia E, Malliaras GG, McCulloch I, Moser M, Nguyen TQ, Owens RM, Salleo A, Spanu A, Torsi L. Electrolyte-gated transistors for enhanced performance bioelectronics. NATURE REVIEWS. METHODS PRIMERS 2021; 1:66. [PMID: 35475166 PMCID: PMC9037952 DOI: 10.1038/s43586-021-00065-8] [Citation(s) in RCA: 102] [Impact Index Per Article: 34.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Accepted: 08/31/2021] [Indexed: 12/31/2022]
Abstract
Electrolyte-gated transistors (EGTs), capable of transducing biological and biochemical inputs into amplified electronic signals and stably operating in aqueous environments, have emerged as fundamental building blocks in bioelectronics. In this Primer, the different EGT architectures are described with the fundamental mechanisms underpinning their functional operation, providing insight into key experiments including necessary data analysis and validation. Several organic and inorganic materials used in the EGT structures and the different fabrication approaches for an optimal experimental design are presented and compared. The functional bio-layers and/or biosystems integrated into or interfaced to EGTs, including self-organization and self-assembly strategies, are reviewed. Relevant and promising applications are discussed, including two-dimensional and three-dimensional cell monitoring, ultra-sensitive biosensors, electrophysiology, synaptic and neuromorphic bio-interfaces, prosthetics and robotics. Advantages, limitations and possible optimizations are also surveyed. Finally, current issues and future directions for further developments and applications are discussed.
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Affiliation(s)
- Fabrizio Torricelli
- Department of Information Engineering, University of Brescia, Brescia, Italy
| | - Demetra Z. Adrahtas
- Department of Chemical Engineering & Materials Science, University of Minnesota, Minneapolis, MN, USA
| | - Zhenan Bao
- Department of Chemical Engineering, Stanford University, Stanford, CA, USA
| | - Magnus Berggren
- Laboratory of Organic Electronics, Department of Science and Technology, Linköping University, Norrköping, Sweden
| | - Fabio Biscarini
- Dipartimento di Scienze della Vita, Università degli Studi di Modena e Reggio Emilia, Modena, Italy
- Center for Translational Neurophysiology of Speech and Communication, Istituto Italiano di Tecnologia, Ferrara, Italy
| | - Annalisa Bonfiglio
- Department of Electrical and Electronic Engineering, University of Cagliari, Cagliari, Italy
| | - Carlo A. Bortolotti
- Dipartimento di Scienze della Vita, Università degli Studi di Modena e Reggio Emilia, Modena, Italy
| | - C. Daniel Frisbie
- Department of Chemical Engineering & Materials Science, University of Minnesota, Minneapolis, MN, USA
| | - Eleonora Macchia
- Faculty of Science and Engineering, Åbo Akademi University, Turku, Finland
| | - George G. Malliaras
- Electrical Engineering Division, Department of Engineering, University of Cambridge, Cambridge, UK
| | - Iain McCulloch
- Physical Sciences and Engineering Division, KAUST Solar Center (KSC), King Abdullah University of Science and Technology (KAUST), Thuwal, Saudi Arabia
- Department of Chemistry, Chemistry Research Laboratory, University of Oxford, Oxford, UK
| | - Maximilian Moser
- Department of Chemistry, Chemistry Research Laboratory, University of Oxford, Oxford, UK
| | - Thuc-Quyen Nguyen
- Department of Chemistry & Biochemistry, University of California Santa Barbara, Santa Barbara, CA, USA
| | - Róisín M. Owens
- Department of Chemical Engineering and Biotechnology, University of Cambridge, Cambridge, UK
| | - Alberto Salleo
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, USA
| | - Andrea Spanu
- Department of Electrical and Electronic Engineering, University of Cagliari, Cagliari, Italy
| | - Luisa Torsi
- Department of Chemistry, University of Bari ‘Aldo Moro’, Bari, Italy
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Sun Q, Gao T, Li X, Li W, Li X, Sakamoto K, Wang Y, Li L, Kanehara M, Liu C, Pang X, Liu X, Zhao J, Minari T. Layer-By-Layer Printing Strategy for High-Performance Flexible Electronic Devices with Low-Temperature Catalyzed Solution-Processed SiO 2. SMALL METHODS 2021; 5:e2100263. [PMID: 34927859 DOI: 10.1002/smtd.202100263] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/09/2021] [Revised: 04/16/2021] [Indexed: 06/14/2023]
Abstract
Additive printing techniques have been widely investigated for fabricating multilayered electronic devices. In this work, a layer-by-layer printing strategy is developed to fabricate multilayered electronics including 3D conductive circuits and thin-film transistors (TFTs) with low-temperature catalyzed, solution-processed SiO2 (LCSS) as the dielectric. Ultrafine, ultrasmooth LCSS films can be facilely formed at 90 °C on a wide variety of organic and inorganic substrates, offering a versatile platform to construct complex heterojunction structures with layer-by-layer fashion at microscale. The high-resolution 3D conductive circuits formed with gold nanoparticles inside the LCSS dielectric demonstrate a high-speed response to the transient voltage in less than 1 µs. The TFTs with semiconducting single-wall carbon nanotubes can be operated with the accumulation mode at a low voltage of 1 V and exhibit average field-effect mobility of 70 cm2 V-1 s-1 , on/off ratio of 107 , small average hysteresis of 0.1 V, and high yield up to 100% as well as long-term stability, high negative-gate bias stability, and good mechanical stability. Therefore, the layer-by-layer printing strategy with the LCSS film is promising to assemble large-scale, high-resolution, and high-performance flexible electronics and to provide a fundamental understanding for correlating dielectric properties with device performance.
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Affiliation(s)
- Qingqing Sun
- School of Materials Science and Engineering, The Key Laboratory of Material Processing and Mold of Ministry of Education, Henan Key Laboratory of Advanced Nylon Materials and Application, National Center for International Joint Research of Micro-nano Moulding Technology, Zhengzhou University, Zhengzhou, 450001, P. R. China
- Printed Electronics Group, Research Center for Functional Materials, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki, 305-0044, Japan
| | - Tianqi Gao
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Sciences, Suzhou, 215123, P. R. China
| | - Xiaomeng Li
- School of Materials Science and Engineering, The Key Laboratory of Material Processing and Mold of Ministry of Education, Henan Key Laboratory of Advanced Nylon Materials and Application, National Center for International Joint Research of Micro-nano Moulding Technology, Zhengzhou University, Zhengzhou, 450001, P. R. China
| | - Wanli Li
- Printed Electronics Group, Research Center for Functional Materials, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki, 305-0044, Japan
| | - Xiaoqian Li
- School of Materials Science and Engineering, The Key Laboratory of Material Processing and Mold of Ministry of Education, Henan Key Laboratory of Advanced Nylon Materials and Application, National Center for International Joint Research of Micro-nano Moulding Technology, Zhengzhou University, Zhengzhou, 450001, P. R. China
| | - Kenji Sakamoto
- Printed Electronics Group, Research Center for Functional Materials, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki, 305-0044, Japan
| | - Yong Wang
- Printed Electronics Group, Research Center for Functional Materials, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki, 305-0044, Japan
| | - Lingying Li
- Printed Electronics Group, Research Center for Functional Materials, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki, 305-0044, Japan
| | | | - Chuan Liu
- Lab of Display Material and Technology School of Electronics and Information Technology, Sun Yat-Sen University, Guangdong, 510275, P. R. China
| | - Xinchang Pang
- School of Materials Science and Engineering, The Key Laboratory of Material Processing and Mold of Ministry of Education, Henan Key Laboratory of Advanced Nylon Materials and Application, National Center for International Joint Research of Micro-nano Moulding Technology, Zhengzhou University, Zhengzhou, 450001, P. R. China
| | - Xuying Liu
- School of Materials Science and Engineering, The Key Laboratory of Material Processing and Mold of Ministry of Education, Henan Key Laboratory of Advanced Nylon Materials and Application, National Center for International Joint Research of Micro-nano Moulding Technology, Zhengzhou University, Zhengzhou, 450001, P. R. China
| | - Jianwen Zhao
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Sciences, Suzhou, 215123, P. R. China
| | - Takeo Minari
- Printed Electronics Group, Research Center for Functional Materials, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki, 305-0044, Japan
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6
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Cardenas JA, Lu S, Williams NX, Doherty JL, Franklin AD. In-Place Printing of Flexible Electrolyte-Gated Carbon Nanotube Transistors with Enhanced Stability. IEEE ELECTRON DEVICE LETTERS : A PUBLICATION OF THE IEEE ELECTRON DEVICES SOCIETY 2021; 42:367-370. [PMID: 33746353 PMCID: PMC7978402 DOI: 10.1109/led.2021.3055787] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
Ion gel-based dielectrics have long been considered for enabling low-voltage operation in printed thin-film transistors (TFTs), but their compatibility with in-place printing (a streamlined, direct-write printing approach where devices never leave the printer mid- or post-process) remains unexplored. Here, we demonstrate a simple and rapid 4-step in-place printing procedure for producing low-voltage electrolyte-gated carbon nanotube (CNT) thin-film transistors at low temperature (80 °C). This process consists of the use of polymer-wrapped CNT inks for printed channels, silver nanowire inks for printed electrodes, and imidazolium-based ion gel inks for printed gate dielectrics. We find that the efficacy of rinsing CNT films and printing an ion gel in-place is optimized using an elevated platen temperature (as opposed to external rinsing or post-process annealing), where resultant devices exhibited on/off-current ratios exceeding 103, mobilities exceeding 10 cm2V-1s-1, and gate hysteresis of only 0.1 V. Additionally, devices were tested under mechanical strain and long-term bias, showing exceptional flexibility and electrochemical stability over the course of 14-hour bias tests. The findings presented here widen the potential scope of print-in-place (PIP) devices and reveal new avenues of investigation for the improvement of bias stress stability in electrolyte-gated transistors.
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Affiliation(s)
- Jorge A Cardenas
- Department of Electrical & Computer Engineering, Duke University, Durham, NC 27708 USA
| | - Shiheng Lu
- Department of Electrical & Computer Engineering, Duke University, Durham, NC 27708 USA
| | - Nicholas X Williams
- Department of Electrical & Computer Engineering, Duke University, Durham, NC 27708 USA
| | - James L Doherty
- Department of Electrical & Computer Engineering, Duke University, Durham, NC 27708 USA
| | - Aaron D Franklin
- Department of Electrical & Computer Engineering, Duke University, Durham, NC 27708 USA
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7
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Lu S, Franklin AD. Printed carbon nanotube thin-film transistors: progress on printable materials and the path to applications. NANOSCALE 2020; 12:23371-23390. [PMID: 33216106 DOI: 10.1039/d0nr06231f] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Printing technologies have attracted significant attention owing to their potential use in the low-cost manufacturing of custom or large-area flexible electronics. Among the many printable electronic materials that have been explored, semiconducting carbon nanotubes (CNTs) have shown increasing promise based on their exceptional electrical and mechanical properties, relative stability in air, and compatibility with several printing techniques to form semiconducting thin films. These attractive attributes make printed CNT thin films promising for applications including, but not limited to, sensors and display backplanes - at the heart of which is electronics' most versatile device: the transistor. In this review, we present a summary of recent advancements in the field of printed carbon nanotube thin-film transistors (CNT-TFTs). In addition to an introduction of different printing techniques, together with their strengths and limitations, we discuss key aspects of ink/material selection and processing of various device components, including the CNT channels, contacts, and gate insulators. It is clear that printed CNT-TFTs are rapidly advancing, but there remain challenges, which are discussed along with current techniques to resolve them and future developments towards practical applications from these devices. There has been interest in low-cost, printable transistors for many years and the CNT-TFTs show great promise for delivering, but will not become a reality without further research advancement.
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Affiliation(s)
- Shiheng Lu
- Department of Electrical and Computer Engineering, Duke University, Durham, NC 27708, USA.
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8
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Portilla L, Zhao J, Wang Y, Sun L, Li F, Robin M, Wei M, Cui Z, Occhipinti LG, Anthopoulos TD, Pecunia V. Ambipolar Deep-Subthreshold Printed-Carbon-Nanotube Transistors for Ultralow-Voltage and Ultralow-Power Electronics. ACS NANO 2020; 14:14036-14046. [PMID: 32924510 DOI: 10.1021/acsnano.0c06619] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The development of ultralow-power and easy-to-fabricate electronics with potential for large-scale circuit integration (i.e., complementary or complementary-like) is an outstanding challenge for emerging off-the-grid applications, e.g., remote sensing, "place-and-forget", and the Internet of Things. Herein we address this challenge through the development of ambipolar transistors relying on solution-processed polymer-sorted semiconducting carbon nanotube networks (sc-SWCNTNs) operating in the deep-subthreshold regime. Application of self-assembled monolayers at the active channel interface enables the fine-tuning of sc-SWCNTN transistors toward well-balanced ambipolar deep-subthreshold characteristics. The significance of these features is assessed by exploring the applicability of such transistors to complementary-like integrated circuits, with respect to which the impact of the subthreshold slope and flatband voltage on voltage and power requirements is studied experimentally and theoretically. As demonstrated with inverter and NAND gates, the ambipolar deep-subthreshold sc-SWCNTN approach enables digital circuits with complementary-like operation and characteristics including wide noise margins and ultralow operational voltages (≤0.5 V), while exhibiting record-low power consumption (≤1 pW/μm). Among thin-film transistor technologies with minimal material complexity, our approach achieves the lowest energy and power dissipation figures reported to date, which are compatible with and highly attractive for emerging off-the-grid applications.
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Affiliation(s)
- Luis Portilla
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu 215123, China
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu 215123, China
| | - Jianwen Zhao
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu 215123, China
| | - Yan Wang
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu 215123, China
| | - Liping Sun
- iHuman institute, ShanghaiTech University, No. 393 Middle Huaxia Road, Shanghai 201210, China
| | - Fengzhu Li
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu 215123, China
| | - Malo Robin
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu 215123, China
| | - Miaomiao Wei
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu 215123, China
| | - Zheng Cui
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu 215123, China
| | - Luigi G Occhipinti
- Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom
| | - Thomas D Anthopoulos
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal 23955-6900, Saudi Arabia
| | - Vincenzo Pecunia
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu 215123, China
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9
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Corletto A, Shapter JG. Nanoscale Patterning of Carbon Nanotubes: Techniques, Applications, and Future. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2020; 8:2001778. [PMID: 33437571 PMCID: PMC7788638 DOI: 10.1002/advs.202001778] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/13/2020] [Revised: 07/30/2020] [Indexed: 05/09/2023]
Abstract
Carbon nanotube (CNT) devices and electronics are achieving maturity and directly competing or surpassing devices that use conventional materials. CNTs have demonstrated ballistic conduction, minimal scaling effects, high current capacity, low power requirements, and excellent optical/photonic properties; making them the ideal candidate for a new material to replace conventional materials in next-generation electronic and photonic systems. CNTs also demonstrate high stability and flexibility, allowing them to be used in flexible, printable, and/or biocompatible electronics. However, a major challenge to fully commercialize these devices is the scalable placement of CNTs into desired micro/nanopatterns and architectures to translate the superior properties of CNTs into macroscale devices. Precise and high throughput patterning becomes increasingly difficult at nanoscale resolution, but it is essential to fully realize the benefits of CNTs. The relatively long, high aspect ratio structures of CNTs must be preserved to maintain their functionalities, consequently making them more difficult to pattern than conventional materials like metals and polymers. This review comprehensively explores the recent development of innovative CNT patterning techniques with nanoscale lateral resolution. Each technique is critically analyzed and applications for the nanoscale-resolution approaches are demonstrated. Promising techniques and the challenges ahead for future devices and applications are discussed.
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Affiliation(s)
- Alexander Corletto
- Australian Institute for Bioengineering and NanotechnologyThe University of QueenslandBrisbaneQueensland4072Australia
| | - Joseph G. Shapter
- Australian Institute for Bioengineering and NanotechnologyThe University of QueenslandBrisbaneQueensland4072Australia
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