P-type Doping in Large-Area Monolayer MoS2 by Chemical Vapor Deposition

Two-Dimensional Semiconductors for State-of-the-Art Complementary Field-Effect Transistors and Integrated Circuits

As the trajectory of transistor scaling defined by Moore's law encounters challenges, the paradigm of ever-evolving integrated circuit technology shifts to explore unconventional materials and architectures to sustain progress. Two-dimensional (2D) semiconductors, characterized by their atomic-scale thickness and exceptional electronic properties, have emerged as a beacon of promise in this quest for the continued advancement of field-effect transistor (FET) technology. The energy-efficient complementary circuit integration necessitates strategic engineering of both n-channel and p-channel 2D FETs to achieve symmetrical high performance. This intricate process mandates the realization of demanding device characteristics, including low contact resistance, precisely controlled doping schemes, high mobility, and seamless incorporation of high- κ dielectrics. Furthermore, the uniform growth of wafer-scale 2D film is imperative to mitigate defect density, minimize device-to-device variation, and establish pristine interfaces within the integrated circuits. This review examines the latest breakthroughs with a focus on the preparation of 2D channel materials and device engineering in advanced FET structures. It also extensively summarizes critical aspects such as the scalability and compatibility of 2D FET devices with existing manufacturing technologies, elucidating the synergistic relationships crucial for realizing efficient and high-performance 2D FETs. These findings extend to potential integrated circuit applications in diverse functionalities.

Transfer of 2D Films: From Imperfection to Perfection

Atomically thin 2D films and their van der Waals heterostructures have demonstrated immense potential for breakthroughs and innovations in science and technology. Integrating 2D films into electronics and optoelectronics devices and their applications in electronics and optoelectronics can lead to improve device efficiencies and tunability. Consequently, there has been steady progress in large-area 2D films for both front- and back-end technologies, with a keen interest in optimizing different growth and synthetic techniques. Parallelly, a significant amount of attention has been directed toward efficient transfer techniques of 2D films on different substrates. Current methods for synthesizing 2D films often involve high-temperature synthesis, precursors, and growth stimulants with highly chemical reactivity. This limitation hinders the widespread applications of 2D films. As a result, reports concerning transfer strategies of 2D films from bare substrates to target substrates have proliferated, showcasing varying degrees of cleanliness, surface damage, and material uniformity. This review aims to evaluate, discuss, and provide an overview of the most advanced transfer methods to date, encompassing wet, dry, and quasi-dry transfer methods. The processes, mechanisms, and pros and cons of each transfer method are critically summarized. Furthermore, we discuss the feasibility of these 2D film transfer methods, concerning their applications in devices and various technology platforms.

Mitigating substrate effects of van der Waals semiconductors using perfluoropolyether self-assembled monolayers

The properties of transition metal dichalcogenides (TMDCs) are critically dependent on the dielectric constant of substrates, which significantly limits their application. To address this issue, we used a perfluorinated polyether (PFPE) self-assembled monolayer (SAM) with low surface energy to increase the van der Waals (vdW) gap between TMDCs and the substrate, thereby reducing the interaction between them. This resulted in a reduction in the subthreshold swing value, an increase in the photoluminescence intensity of excitons, and a decrease in the doping effect by the substrate. This work will provide a new way to control the TMDC/dielectric interface and contribute to expanding the applicability of TMDCs.

Elucidating the Role of Electron Transfer in the Photoluminescence of MoS2 Quantum Dots Synthesized by fs-Pulse Ablation

Herein, MoS2 quantum dots (QDs) with controlled optical, structural, and electronic properties are synthesized using the femtosecond pulsed laser ablation in liquid (fs-PLAL) technique by varying the pulse width, ablation power, and ablation time to harness the potential for next-generation optoelectronics and quantum technology. Furthermore, this work elucidates key aspects of the mechanisms underlying the near-UV and blue emissions the accompanying large Stokes shift, and the consequent change in sample color with laser exposure parameters pertaining to MoS2 QDs. Through spectroscopic analysis, including UV-visible absorption, photoluminescence, and Raman spectroscopy, we successfully unraveled the mechanisms for the change in optoelectronic properties of MoS2 QDs with laser parameters. We realize that the occurrence of a secondary phase, specifically MoO3-x, is responsible for the significant Stokes shift and blue emission observed in this QD system. The primary factor influencing these activities is the electron transfer observed between these two phases, as validated by excitation-dependent photoluminescence and XPS and Raman spectroscopies.

Band Gap Engineering of MoxW1-xS2 Alloy Monolayers with Wafer-Scale Uniformity

Modulating the band gap of two-dimensional (2D) transition metal dichalcogenide (TMDC) semiconductors is critical for their application in a wider spectral range. Alloying has been demonstrated as an effective method for regulating the band gap of 2D TMDC semiconductors. The fabrication of large-area 2D TMDC alloy films with centimeter-scale uniformity is fundamental to the application of integrated devices. Herein, we report a liquid-phase precursor one-step chemical vapor deposition (CVD) method for fabricating a MoxW1-xS2 alloy monolayer with a large size and an adjustable band gap. Good crystalline quality and high uniformity on a wafer scale enable the continuous adjustment of its band gap in the range of 1.8-2.0 eV. Density functional theory calculations provided a deep understanding of the Raman-active vibration modes of the MoxW1-xS2 alloy monolayer and the change in the conductivity of the alloy with photon energy. The synthesis of large-area MoxW1-xS2 alloy monolayers is a critical step toward the application of 2D layered semiconductors in practical optoelectronic devices.

Vanadium Metal Doping of Monolayer MoS2 for p-Type Transistors and Fast-Speed Phototransistors

Modulating the electrical properties of two-dimensional (2D) materials is a fundamental prerequisite for their development to advanced electronic and optoelectronic devices. Substitutional doping has been demonstrated as an effective method for tuning the band structure in monolayer 2D materials. Here, we demonstrate a facile selective-area growth of vanadium-doped molybdenum disulfide (V-doped MoS2) flakes via pre-patterned vanadium-metal-assisted chemical vapor deposition (CVD). Optical microscopy characterization revealed the presence of flake arrays. Transmission electron microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy were employed to identify the chemical composition and crystalline structure of as-grown flakes. Electrical measurements indicated a light p-type conduction behavior in monolayer V-doped MoS2. Furthermore, the response time of phototransistors based on V-doped MoS2 monolayers exhibited a remarkable capability of 3 ms, representing approximately 3 orders of magnitude faster response than that observed in pure MoS2 phototransistors. This work hereby provides a feasible approach to doping of 2D materials, promising a scalable pathway for the integration of these materials into emerging electronic and optoelectronic devices.

Anisotropic charge transfer and gate tuning for p-SnS/n-MoS2 vertical van der Waals diodes

2D-material-based van der Waals heterostructures (vdWhs) have shown great potential in next-generation multi-functional microelectronic devices. Thanks to their sharp interface and ultrathin thickness, 2D p-n junctions with high rectification properties have been established by combining p-type monochalcogenides with n-type transition metal dichalcogenides. However, the anisotropic rectification together with the charge transfer and gate effect has not been clarified. Herein, the electrical anisotropy of p-SnS/n-MoS2 diodes was studied. Optimum ideality factors within 1.08-1.18 have been achieved for the diode with 6.6 nm thick SnS on monolayer MoS2, and a high rectification ratio of 3.1 × 104 with strong in-plane anisotropy is observed along the zigzag direction of SnS. A strong gate effect on the anisotropic series resistance has been verified and an effective tuning over the transport length of the SnS channel can be established through adjustment of the current orientation and gate voltage. A thickness-dependent minority carrier transport mechanism has also been demonstrated for the reverse drain current, and Fowler-Nordheim tunneling and direct tunneling are proposed for the increase of the reverse current of the thicker and thinner diodes, respectively. This work will provide another strategy for high-performance diodes based on vdWhs via the control of the current orientation and the gate effect.

Phase Engineering and Synchrotron-Based Study on Two-Dimensional Energy Nanomaterials

In recent years, there has been significant interest in the development of two-dimensional (2D) nanomaterials with unique physicochemical properties for various energy applications. These properties are often derived from the phase structures established through a range of physical and chemical design strategies. A concrete analysis of the phase structures and real reaction mechanisms of 2D energy nanomaterials requires advanced characterization methods that offer valuable information as much as possible. Here, we present a comprehensive review on the phase engineering of typical 2D nanomaterials with the focus of synchrotron radiation characterizations. In particular, the intrinsic defects, atomic doping, intercalation, and heterogeneous interfaces on 2D nanomaterials are introduced, together with their applications in energy-related fields. Among them, synchrotron-based multiple spectroscopic techniques are emphasized to reveal their intrinsic phases and structures. More importantly, various in situ methods are employed to provide deep insights into their structural evolutions under working conditions or reaction processes of 2D energy nanomaterials. Finally, conclusions and research perspectives on the future outlook for the further development of 2D energy nanomaterials and synchrotron radiation light sources and integrated techniques are discussed.

Heteroatom-Doped Molybdenum Disulfide Nanomaterials for Gas Sensors, Alkali Metal-Ion Batteries and Supercapacitors

Molybdenum disulfide (MoS2) is the second two-dimensional material after graphene that received a lot of attention from the research community. Strong S-Mo-S bonds make the sandwich-like layer mechanically and chemically stable, while the abundance of precursors and several developed synthesis methods allow obtaining various MoS2 architectures, including those in combinations with a carbon component. Doping of MoS2 with heteroatom substituents can occur by replacing Mo and S with other cations and anions. This creates active sites on the basal plane, which is important for the adsorption of reactive species. Adsorption is a key step in the gas detection and electrochemical energy storage processes discussed in this review. The literature data were analyzed in the light of the influence of a substitutional heteroatom on the interaction of MoS2 with gas molecules and electrolyte ions. Theory predicts that the binding energy of molecules to a MoS2 surface increases in the presence of heteroatoms, and experiments showed that such surfaces are more sensitive to certain gases. The best electrochemical performance of MoS2-based nanomaterials is usually achieved by including foreign metals. Heteroatoms improve the electrical conductivity of MoS2, which is a semiconductor in a thermodynamically stable hexagonal form, increase the distance between layers, and cause lattice deformation and electronic density redistribution. An analysis of literature data showed that co-doping with various elements is most attractive for improving the performance of MoS2 in sensor and electrochemical applications. This is the first comprehensive review on the influence of foreign elements inserted into MoS2 lattice on the performance of a nanomaterial in chemiresistive gas sensors, lithium-, sodium-, and potassium-ion batteries, and supercapacitors. The collected data can serve as a guide to determine which elements and combinations of elements can be used to obtain a MoS2-based nanomaterial with the properties required for a particular application.

Substitutional p-Type Doping in NbS2 -MoS2 Lateral Heterostructures Grown by MOCVD

Monolayer MoS2 has attracted significant attention owing to its excellent performance as an n-type semiconductor from the transition metal dichalcogenide (TMDC) family. It is however strongly desired to develop controllable synthesis methods for 2D p-type MoS2 , which is crucial for complementary logic applications but remains difficult. In this work, high-quality NbS2 -MoS2 lateral heterostructures are synthesized by one-step metal-organic chemical vapor deposition (MOCVD) together with monolayer MoS2 substitutionally doped by Nb, resulting in a p-type doped behavior. The heterojunction shows a p-type transfer characteristic with a high on/off current ratio of ≈104 , exceeding previously reported values. The band structure through the NbS2 -MoS2 heterojunction is investigated by density functional theory (DFT) and quantum transport simulations. This work provides a scalable approach to synthesize substitutionally doped TMDC materials and provides an insight into the interface between 2D metals and semiconductors in lateral heterostructures, which is imperative for the development of next-generation nanoelectronics and highly integrated devices.

Electronic sensitization enhanced p-type ammonia gas sensing of zinc doped MoS2/RGO composites

Zinc (Zn) doping induced synergetic effects of defects engineering and heterojunction in Molybdenum disulphide/Reduced graphene oxide (MoS₂/RGO) effectively enhances the p-type Volatile organic compounds (VOC) gas sensing traits and helps in tailoring the over dependence on noble metals for surface sensitization. Through this work, we have successfully prepared Zn doped MoS₂ grafted on RGO employing an in-situ hydrothermal method. Optimal doping concentration of Zn dopants in the MoS₂ lattice triggered more active sites on the basal plane of MoS₂ with the aid of defects promoted by the zinc dopants. Effective intercalation of RGO further boost up the exposed surface area of Zn doped MoS₂ for further interaction of ammonia gas molecules. Besides, smaller crystallite size brought out by 5% Zn dopants aids in efficient charge transfer across the heterojunctions that further amplifies the ammonia sensing traits with a peak response of 32.40% along with a response time of 21.3 s and recovery time of 44.90 s. The as prepared ammonia gas sensor exhibited excellent selectivity and repeatability. The obtained results reveal that transition metal doping into the host lattice proves to be a promising approach for VOC sensing characteristics of p-type gas sensors and gives insight about the importance of dopants and defects for the development of highly efficient gas sensors in the future.

Hysteresis-Free Contact Doping for High-Performance Two-Dimensional Electronics

Contact doping is considered crucial for reducing the contact resistance of two-dimensional (2D) transistors. However, a process for achieving robust contact doping for 2D electronics is lacking. Here, we developed a two-step doping method for effectively doping 2D materials through a defect-repairing process. The method achieves strong and hysteresis-free doping and is suitable for use with the most widely used transition-metal dichalcogenides. Through our method, we achieved a record-high sheet conductance (0.16 mS·sq^-1 without gating) of monolayer MoS₂ and a high mobility and carrier concentration (4.1 × 10¹³ cm^-2). We employed our robust method for the successful contact doping of a monolayer MoS₂ Au-contact device, obtaining a contact resistance as low as 1.2 kΩ·μm. Our method represents an effective means of fabricating high-performance 2D transistors.

Novel Impregnation-Deposition Method to Synthesize a Presulfided MoS2/Al2O3 Catalyst and Its Application in Hydrodesulfurization

A novel impregnation-deposition method was applied to prepare presulfided MoS₂/Al₂O₃ catalysts with large surface areas for the application of hydrodesulfurization (HDS). The synthesized catalysts were characterized systematically, and their catalytic performances were evaluated by the HDS of dibenzothiophene (DBT). It is found that the impregnation-deposition method improves the surface area of the synthesized catalysts by eliminating the micropores of the alumina support and adding mesostructured MoS₂ particles within the support. Moreover, this method enhances the reducibility of the sulfided Mo species, as characterized by temperature-programed reduction (TPR) and X-ray photoelectron spectroscopy. Compared to the impregnation method, the impregnation-deposition method leads to the formation of more active sites as proved by TPR and CO-Fourier-transform infrared analyses. Hence, the reaction conversion rates and the hydrogenation/direct-desulfurization ratios of the DBT on the catalysts synthesized by the impregnation-deposition method are 1.3 times and 1.5 times as high as those of the catalysts made by the conventional impregnation method, respectively.

Filling the Gap between Heteroatom Doping and Edge Enrichment of 2D Electrocatalysts for Enhanced Hydrogen Evolution

Composition modulation and edge enrichment are established protocols to steer the electronic structures and catalytic activities of two-dimensional (2D) materials. It is believed that a heteroatom enhances the catalytic performance by activating the chemically inert basal plane of 2D crystals. However, the edge and basal plane have inherently different electronic states, and how the dopants affect the edge activity remains ambiguous. Here we provide mechanistic insights into this issue by monitoring the hydrogen evolution reaction (HER) performance of phosphorus-doped MoS2 (P-MoS2) nanosheets via on-chip electrocatalytic microdevices. Upon phosphorus doping, MoS2 nanosheet gets catalytically activated and, more importantly, shows higher HER activity in the edge than the basal plane. In situ transport measurement demonstrates that the improved HER performance of P-MoS2 is derived from intrinsic catalytic activity rather than charge transfer. Density functional theory calculations manifest that the edge sites of P-MoS2 are energetically more favorable for HER. The finding guides the rational design of edge-dominant P-MoS2, reaching a minuscule onset potential of ∼30 mV and Tafel slope of 48 mV/dec that are benchmarked against other activation methods. Our results disclose the hitherto overlooked edge activity of 2D materials induced by heteroatom doping that will provide perspectives for preparing next-generation 2D catalysts.

Large-Scale 1T'-Phase Tungsten Disulfide Atomic Layers Grown by Gas-Source Chemical Vapor Deposition

The control of crystal polymorphism and exploration of metastable, two-dimensional, 1T'-phase, transition-metal dichalcogenides (TMDs) have received considerable research attention. 1T'-phase TMDs are expected to offer various opportunities for the study of basic condensed matter physics and for its use in important applications, such as devices with topological states for quantum computing, low-resistance contact for semiconducting TMDs, energy storage devices, and as hydrogen evolution catalysts. However, due to the high energy difference and phase change barrier between 1T' and the more stable 2H-phase, there are few methods that can be used to obtain monolayer 1T'-phase TMDs. Here, we report on the chemical vapor deposition (CVD) growth of 1T'-phase WS₂ atomic layers from gaseous precursors, i.e., H₂S and WF₆, with alkali metal assistance. The gaseous nature of the precursors, reducing properties of H₂S, and presence of Na⁺, which acts as a countercation, provided an optimal environment for the growth of 1T'-phase WS₂, resulting in the formation of high-quality submillimeter-sized crystals. The crystal structure was characterized by atomic-resolution scanning transmission electron microscopy, and the zigzag chain structure of W atoms, which is characteristic of the 1T' structure, was clearly observed. Furthermore, the grown 1T'-phase WS₂ showed superconductivity with the transition temperature in the 2.8-3.4 K range and large upper critical field anisotropy. Thus, alkali metal assisted gas-source CVD growth is useful for realizing large-scale, high-quality, phase-engineered TMD atomic layers via a bottom-up synthesis.

Effective Optical Properties of Laterally Coalescing Monolayer MoS2

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) exhibit compelling dimension-dependent exciton-dominated optical behavior influenced by thickness and lateral quantum confinement effects. Thickness quantum confinement effects have been observed; however, experimental optical property assessment of nanoscale lateral dimension monolayer TMDCs is lacking. Here, we employ ex situ spectroscopic ellipsometry to evaluate laterally coalescing monolayer metalorganic chemical vapor deposited MoS₂. A multisample analysis is used to constrain Bruggeman and Maxwell-Garnett effective medium approximations and the effective dielectric functions are derived for laterally coalesced and uncoalesced MoS₂ films (∼10-94% surface coverage for ∼10-140 nm lateral grain sizes). This analysis demonstrates the ability to probe MoS₂ optical exciton behavior at growth-relevant grain sizes in relation to chemical vapor nucleation density, ripening, and lateral growth conditions. Our analysis is pertinent toward expected in situ epitaxial 2D TMDC film growth metrology to enable the facile development of monolayer films with targeted process-dependent optical properties.

Recent Developments and Future Perspective on Electrochemical Glucose Sensors Based on 2D Materials

Diabetes is a health disorder that necessitates constant blood glucose monitoring. The industry is always interested in creating novel glucose sensor devices because of the great demand for low-cost, quick, and precise means of monitoring blood glucose levels. Electrochemical glucose sensors, among others, have been developed and are now frequently used in clinical research. Nonetheless, despite the substantial obstacles, these electrochemical glucose sensors face numerous challenges. Because of their excellent stability, vast surface area, and low cost, various types of 2D materials have been employed to produce enzymatic and nonenzymatic glucose sensing applications. This review article looks at both enzymatic and nonenzymatic glucose sensors made from 2D materials. On the other hand, we concentrated on discussing the complexities of many significant papers addressing the construction of sensors and the usage of prepared sensors so that readers might grasp the concepts underlying such devices and related detection strategies. We also discuss several tuning approaches for improving electrochemical glucose sensor performance, as well as current breakthroughs and future plans in wearable and flexible electrochemical glucose sensors based on 2D materials as well as photoelectrochemical sensors.

RF Sputtered Nb-Doped MoS2 Thin Film for Effective Detection of NO2 Gas Molecules: Theoretical and Experimental Studies

Doping plays a significant role in affecting the physical and chemical properties of two-dimensional (2D) dichalcogenide materials. Controllable doping is one of the major factors in the modification of the electronic and mechanical properties of 2D materials. MoS₂ 2D materials have gained significant attention in gas sensing owing to their high surface-to-volume ratio. However, low response and recovery time hinder their application in practical gas sensors. Herein, we report the enhanced gas response and recovery of Nb-doped MoS₂ gas sensor synthesized through physical vapor deposition (PVD) toward NO₂ at different temperatures. The electronic states of MoS₂ and Nb-doped MOS₂ monolayers grown by PVD were analyzed based on their work functions. Doping with Nb increases the work function of MoS₂ and its electronic properties. The Nb-doped MoS₂ showed an ultrafast response and recovery time of t _rec = 30/85 s toward 5 ppm of NO₂ at their optimal operating temperature (100 °C). The experimental results complement the electron difference density functional theory calculation, showing both physisorption and chemisorption of NO₂ gas molecules on niobium substitution doping in MoS₂.

Atomic Vacancies in Transition Metal Dichalcogenides: Properties, Fabrication, and Limits

Structural defects, such as heteroatoms or atomic vacancies, are always present in materials and significantly affect their physical properties, in both positive or unwanted ways. Interestingly, defects generate an impressive range of functionalities in many materials, such as catalysis, electrical and thermal conductivity tuning, thermoelectricity, enhanced ion storage, magnetism, and others. These properties enable the use of defective materials in a great variety of technological applications. Here we review the principal properties generated by atomic vacancies in 2D compounds and thin films of transition metal dichalcogenides and the most consolidated methods for their formation and engineering. Eventually, we critically analysed the most important advantages, the limits and the current open challenges.

Multiscale Photonic Emissivity Engineering for Relativistic Lightsail Thermal Regulation

The Breakthrough Starshot Initiative aims to send a gram-scale probe to our nearest extrasolar neighbors using a laser-accelerated lightsail traveling at relativistic speeds. Thermal management is a key lightsail design objective because of the intense laser powers required but has generally been considered secondary to accelerative performance. Here, we demonstrate nanophotonic photonic crystal slab reflectors composed of 2H-phase molybdenum disulfide and crystalline silicon nitride, highlight the inverse relationship between the thermal band extinction coefficient and the lightsail's maximum temperature, and examine the trade-off between minimizing acceleration distance and setting realistic sail thermal limits, ultimately realizing a thermally endurable acceleration minimum distance of 23.3 Gm. We additionally demonstrate multiscale photonic structures featuring thermal-wavelength-scale Mie resonant geometries and characterize their broadband Mie resonance-driven emissivity enhancement and acceleration distance reduction. More broadly, our results highlight new possibilities for simultaneously controlling optical and thermal response over broad wavelength ranges in ultralight nanophotonic structures.

Wafer-Scale Synthesis of WS2 Films with In Situ Controllable p-Type Doping by Atomic Layer Deposition

Wafer-scale synthesis of p-type TMD films is critical for its commercialization in next-generation electro/optoelectronics. In this work, wafer-scale intrinsic n-type WS₂ films and in situ Nb-doped p-type WS₂ films were synthesized through atomic layer deposition (ALD) on 8-inch α-Al₂O₃/Si wafers, 2-inch sapphire, and 1 cm² GaN substrate pieces. The Nb doping concentration was precisely controlled by altering cycle number of Nb precursor and activated by postannealing. WS₂ n-FETs and Nb-doped p-FETs with different Nb concentrations have been fabricated using CMOS-compatible processes. X-ray photoelectron spectroscopy, Raman spectroscopy, and Hall measurements confirmed the effective substitutional doping with Nb. The on/off ratio and electron mobility of WS₂ n-FET are as high as 10⁵ and 6.85 cm² V⁻¹ s⁻¹, respectively. In WS₂ p-FET with 15-cycle Nb doping, the on/off ratio and hole mobility are 10 and 0.016 cm² V⁻¹ s⁻¹, respectively. The p-n structure based on n- and p- type WS₂ films was proved with a 10⁴ rectifying ratio. The realization of controllable in situ Nb-doped WS₂ films paved a way for fabricating wafer-scale complementary WS₂ FETs.

A Review on Chemical Vapour Deposition of Two-Dimensional MoS2 Flakes

Two-dimensional (2D) materials such as graphene, transition metal dichalcogenides, and boron nitride have recently emerged as promising candidates for novel applications in sensing and for new electronic and photonic devices. Their exceptional mechanical, electronic, optical, and transport properties show peculiar differences from those of their bulk counterparts and may allow for future radical innovation breakthroughs in different applications. Control and reproducibility of synthesis are two essential, key factors required to drive the development of 2D materials, because their industrial application is directly linked to the development of a high-throughput and reliable technique to obtain 2D layers of different materials on large area substrates. Among various methods, chemical vapour deposition is considered an excellent candidate for this goal thanks to its simplicity, widespread use, and compatibility with other processes used to deposit other semiconductors. In this review, we explore the chemical vapour deposition of MoS2, considered one of the most promising and successful transition metal dichalcogenides. We summarize the basics of the synthesis procedure, discussing in depth: (i) the different substrates used for its deposition, (ii) precursors (solid, liquid, gaseous) available, and (iii) different types of promoters that favour the growth of two-dimensional layers. We also present a comprehensive analysis of the status of the research on the growth mechanisms of the flakes.

Hole doping effect of MoS2 via electron capture of He+ ion irradiation

Beyond the general purpose of noble gas ion sputtering, which is to achieve functional defect engineering of two-dimensional (2D) materials, we herein report another positive effect of low-energy (100 eV) He⁺ ion irradiation: converting n-type MoS₂ to p-type by electron capture through the migration of the topmost S atoms. The electron capture ability via He⁺ ion irradiation is valid for supported bilayer MoS₂; however, it is limited at supported monolayer MoS₂ because the charges on the underlying substrates transfer into the monolayer under the current condition for He⁺ ion irradiation. Our technique provides a stable and universal method for converting n-type 2D transition metal dichalcogenides (TMDs) into p-type semiconductors in a controlled fashion using low-energy He⁺ ion irradiation.

Hybrid Thin-Film Materials Combinations for Complementary Integration Circuit Implementation

Beyond conventional silicon, emerging semiconductor materials have been actively investigated for the development of integrated circuits (ICs). Considerable effort has been put into implementing complementary circuits using non-silicon emerging materials, such as organic semiconductors, carbon nanotubes, metal oxides, transition metal dichalcogenides, and perovskites. Whereas shortcomings of each candidate semiconductor limit the development of complementary ICs, an approach of hybrid materials is considered as a new solution to the complementary integration process. This article revisits recent advances in hybrid-material combination-based complementary circuits. This review summarizes the strong and weak points of the respective candidates, focusing on their complementary circuit integrations. We also discuss the opportunities and challenges presented by the prospect of hybrid integration.

Advanced Strategies to Improve Performances of Molybdenum-Based Gas Sensors

Molybdenum-based materials have been intensively investigated for high-performance gas sensor applications. Particularly, molybdenum oxides and dichalcogenides nanostructures have been widely examined due to their tunable structural and physicochemical properties that meet sensor requirements. These materials have good durability, are naturally abundant, low cost, and have facile preparation, allowing scalable fabrication to fulfill the growing demand of susceptible sensor devices. Significant advances have been made in recent decades to design and fabricate various molybdenum oxides- and dichalcogenides-based sensing materials, though it is still challenging to achieve high performances. Therefore, many experimental and theoretical investigations have been devoted to exploring suitable approaches which can significantly enhance their gas sensing properties. This review comprehensively examines recent advanced strategies to improve the nanostructured molybdenum-based material performance for detecting harmful pollutants, dangerous gases, or even exhaled breath monitoring. The summary and future challenges to advance their gas sensing performances will also be presented.

Reversing the Polarity of MoS2 with PTFE

Pristine monolayer molybdenum disulfide (MoS₂) demonstrates predominant and persistent n-type semiconducting polarity due to the natural sulfur vacancy, which hinders its electronic and optoelectronic applications in the rich bipolarity area of semiconductors. Current doping strategies in single-layer MoS₂ are either too mild to reverse the heavily n-doped polarity or too volatile to create a robust electronic device meeting the requirements of both a long lifetime and compatibility for mass production. Herein, we demonstrate that MoS₂ can be transferred onto polytetrafluoroethylene (PTFE), one of the most electronegative substrates. After transfer, the MoS₂ photoluminescence exhibits an obvious blueshift from 1.83 to 1.89 eV and a prolonged lifetime, from 0.13 to 3.19 ns. The Fermi level of MoS₂ experiences a remarkable 510 meV decrease, transforming its electronic structure into that of a hole-rich p-type semiconductor. Our work reveals a strong p-doping effect and charge transfer between MoS₂ and PTFE, shedding light on a new nonvolatile strategy to fabricate p-type MoS₂ devices.

Modulation Doping: A Strategy for 2D Materials Electronics

It remains a remarkable challenge to develop practical techniques for controllable and nondestructive doping in two-dimensional (2D) materials for their use in electronics and optoelectronics. Here, we propose a modulation doping strategy, wherein the perfect n-/p-type channel layer is achieved by accepting/donating electrons from/to the defects inside an adjacent encapsulation layer. We demonstrate this strategy in the heterostructures of BN/graphene, BN/MoS₂, where the previously believed useless deep defects, such as the nitrogen vacancy in BN, can provide free carriers to the graphene and MoS₂. The carrier density is further modulated by engineering the surroundings of the encapsulation layer. Moreover, the defects and carriers are naturally separated in space, eliminating the effects of Coulomb impurity scattering and thus allowing high mobility in the 2D limit. This doping strategy provides a highly viable route to tune 2D channel materials without inducing any structural damage, paving the way for high-performance 2D nanoelectronic devices.

Substrate Materials for Biomolecular Immobilization within Electrochemical Biosensors

Electrochemical biosensors have potential applications for agriculture, food safety, environmental monitoring, sports medicine, biomedicine, and other fields. One of the primary challenges in this field is the immobilization of biomolecular probes atop a solid substrate material with adequate stability, storage lifetime, and reproducibility. This review summarizes the current state of the art for covalent bonding of biomolecules onto solid substrate materials. Early research focused on the use of Au electrodes, with immobilization of biomolecules through ω-functionalized Au-thiol self-assembled monolayers (SAMs), but stability is usually inadequate due to the weak Au-S bond strength. Other noble substrates such as C, Pt, and Si have also been studied. While their nobility has the advantage of ensuring biocompatibility, it also has the disadvantage of making them relatively unreactive towards covalent bond formation. With the exception of Sn-doped In2O3 (indium tin oxide, ITO), most metal oxides are not electrically conductive enough for use within electrochemical biosensors. Recent research has focused on transition metal dichalcogenides (TMDs) such as MoS2 and on electrically conductive polymers such as polyaniline, polypyrrole, and polythiophene. In addition, the deposition of functionalized thin films from aryldiazonium cations has attracted significant attention as a substrate-independent method for biofunctionalization.

Identification of Point Defects in Atomically Thin Transition-Metal Dichalcogenide Semiconductors as Active Dopants

Selective doping in semiconductors is essential not only for monolithic integrated circuity fabrications but also for tailoring their properties including electronic, optical, and catalytic activities. Such active dopants are essentially point defects in the host lattice. In atomically thin two-dimensional (2D) transition-metal dichalcogenides (TMDCs), the roles of such point defects are particularly critical in addition to their large surface-to-volume ratio, because their bond dissociation energy is relatively weaker, compared to elemental semiconductors. In this Mini Review, we review recent advances in the identifications of diverse point defects in 2D TMDC semiconductors, as active dopants, toward the tunable doping processes, along with the doping methods and mechanisms in literature. In particular, we discuss key issues in identifying such dopants both at the atomic scales and the device scales with selective examples. Fundamental understanding of these point defects can hold promise for tunability doping of atomically thin 2D semiconductor platforms.

MoS2 Based Photodetectors: A Review

Photodetectors based on transition metal dichalcogenides (TMDs) have been widely reported in the literature and molybdenum disulfide (MoS2) has been the most extensively explored for photodetection applications. The properties of MoS2, such as direct band gap transition in low dimensional structures, strong light-matter interaction and good carrier mobility, combined with the possibility of fabricating thin MoS2 films, have attracted interest for this material in the field of optoelectronics. In this work, MoS2-based photodetectors are reviewed in terms of their main performance metrics, namely responsivity, detectivity, response time and dark current. Although neat MoS2-based detectors already show remarkable characteristics in the visible spectral range, MoS2 can be advantageously coupled with other materials to further improve the detector performance Nanoparticles (NPs) and quantum dots (QDs) have been exploited in combination with MoS2 to boost the response of the devices in the near ultraviolet (NUV) and infrared (IR) spectral range. Moreover, heterostructures with different materials (e.g., other TMDs, Graphene) can speed up the response of the photodetectors through the creation of built-in electric fields and the faster transport of charge carriers. Finally, in order to enhance the stability of the devices, perovskites have been exploited both as passivation layers and as electron reservoirs.

Concurrent Vacancy and Adatom Defects of Mo1-xNbxSe2 Alloy Nanosheets Enhance Electrochemical Performance of Hydrogen Evolution Reaction

Earth-abundant transition metal dichalcogenide nanosheets have emerged as an excellent catalyst for electrochemical water splitting to generate H₂. Alloying the nanosheets with heteroatoms is a promising strategy to enhance their catalytic performance. Herein, we synthesized hexagonal (2H) phase Mo_1-xNb_xSe₂ nanosheets over the whole composition range using a solvothermal reaction. Alloying results in a variety of atomic-scale crystal defects such as Se vacancies, metal vacancies, and adatoms. The defect content is maximized when x approaches 0.5. Detailed structure analysis revealed that the NbSe₂ bonding structures in the alloy phase are more disordered than the MoSe₂ ones. Compared to MoSe₂ and NbSe₂, Mo_0.5Nb_0.5Se₂ exhibits much higher electrocatalytic performance for hydrogen evolution reaction. First-principles calculation was performed for the formation energy in the models for vacancies and adatoms, supporting that the alloy phase has more defects than either NbSe₂ or MoSe₂. The calculation predicted that the separated NbSe₂ domain at x = 0.5 favors the concurrent formation of Nb/Se vacancies and adatoms in a highly cooperative way. Moreover, the Gibbs free energy along the reaction path suggests that the enhanced HER performance of alloy nanosheets originates from the higher concentration of defects that favor H atom adsorption.

Molybdenum disulfide-based materials with enzyme-like characteristics for biological applications

Nanozyme, a kind of nanomaterials with enzymatic activity, has been developing vigorously over the past years owing to its advantages such as low-cost, easy storage, ease of use in harsh environments and so on, compared with natural enzymes. At present, as a typical two-dimensional nanomaterial, molybdenum disulfide (MoS₂) and their hybrids with unexpected enzyme-like activities have caused wide attention. In this review, we mainly investigated the enzyme-like activities of MoS₂ based nanomaterials, including peroxidase-like activity, catalase-like activity and superoxide dismutase-like activity. Furthermore, we systematically introduce recent research progress of MoS₂ based nanomaterials in the fields of biological applications such as radiation protection, cancer therapy, antibacterial, and wound healing. Finally, the current challenges and perspectives of MoS₂ based nanomaterials in the future are also discussed and proposed. We expect this review may be significant to understand the properties of MoS₂ based nanomaterials and the development of two-dimensional nanomaterials with enzyme mimicking activities.

Hysteresis-reversible MoS2 transistor

Sulfur vacancy dominant hysteresis in MoS₂ transistors is observed. By decorating with Pt, the hysteresis behavior could switch from sulfur vacancy dominant to interfacial dominant, thereby realizing a hysteresis-reversible MoS₂ transistor.

Ambipolar 2D Semiconductors and Emerging Device Applications

With the rise of 2D materials, new physics and new processing techniques have emerged, triggering possibilities for the innovation of electronic and optoelectronic devices. Among them, ambipolar 2D semiconductors are of excellent gate-controlled capability and distinctive physical characteristic that the major charge carriers can be dynamically, reversibly and rapidly tuned between holes and electrons by electrostatic field. Based on such properties, novel devices, like ambipolar field-effect transistors, light-emitting transistors, electrostatic-field-charging PN diodes, are developed and show great advantages in logic and reconfigurable circuits, integrated optoelectronic circuits, and artificial neural network image sensors, enriching the functions of conventional devices and bringing breakthroughs to build new architectures. This review first focuses on the basic knowledge including fundamental principle of ambipolar semiconductors, basic material preparation techniques, and how to obtain the ambipolar behavior through electrical contact engineering. Then, the current ambipolar 2D semiconductors and their preparation approaches and main properties are summarized. Finally, the emerging new device structures are overviewed in detail, along with their novel electronic and optoelectronic applications. It is expected to shed light on the future development of ambipolar 2D semiconductors, exploring more new devices with novel functions and promoting the applications of 2D materials.

Lateral monolayer MoS2 homojunction devices prepared by nitrogen plasma doping

Monolayer MoS₂ possesses good electron mobility, structural flexibility and a direct band gap, enabling it to be a promising candidate for flexible and wearable optoelectronic devices. In this article, the lateral monolayer MoS₂ homojunctions were prepared by a nitrogen plasma selective doping technique. The monolayer MoS₂ thin films were synthesized by chemical vapor deposition and characterized by photoluminescence, atom force microscope and Raman spectroscopy. The electronic and photoelectric properties of the lateral pn and npn homojunctions were discussed. The results showed that the rectifying ratio of the pn homojunction diode is ∼10³. As a photodetector of pn homojunction, the optical responsivity is up to 48.5 A W^-1, the external quantum efficiency is 11 301%, the detectivity is ∼10⁹ Jones and the response time is 20 ms with the laser of 532 nm and the reverse bias voltage of 10 V. As a bipolar junction transistor of npn homojunction, the amplification coefficient reached ∼10². A controllable plasma doping technique, compatible with traditional CMOS process, is utilized to realize the monolayer MoS₂ based pn and npn homojunctions, and it propels the potential applications of 2D materials in the electronic, optoelectronic devices and circuits.

Growth and Interlayer Engineering of 2D Layered Semiconductors for Future Electronics

Layered materials that do not form a covalent bond in a vertical direction can be prepared in a few atoms to one atom thickness without dangling bonds. This distinctive characteristic of limiting thickness around the sub-nanometer level allowed scientists to explore various physical phenomena in the quantum realm. In addition to the contribution to fundamental science, various applications were proposed. Representatively, they were suggested as a promising material for future electronics. This is because (i) the dangling-bond-free nature inhibits surface scattering, thus carrier mobility can be maintained at sub-nanometer range; (ii) the ultrathin nature allows the short-channel effect to be overcome. In order to establish fundamental discoveries and utilize them in practical applications, appropriate preparation methods are required. On the other hand, adjusting properties to fit the desired application properly is another critical issue. Hence, in this review, we first describe the preparation method of layered materials. Proper growth techniques for target applications and the growth of emerging materials at the beginning stage will be extensively discussed. In addition, we suggest interlayer engineering via intercalation as a method for the development of artificial crystal. Since infinite combinations of the host-intercalant combination are possible, it is expected to expand the material system from the current compound system. Finally, inevitable factors that layered materials must face to be used as electronic applications will be introduced with possible solutions. Emerging electronic devices realized by layered materials are also discussed.

Induced spin polarization in graphene via interactions with halogen doped MoS2 and MoSe2 monolayers by DFT calculations

Magnetic halogen doped MoX2 (X = S and Se) monolayers influenced the electronic structure of graphene through a proximity effect. This process was observed using state-of-the-art calculations. It was found that the substitution of a single chalcogen atom with a halogen atom (F, Cl, Br, and I) results in n-type doping of MoX2. An additional electron from the dopant is localized on binding orbitals with the nearest Mo atoms and leads to the formation of magnetism in the dichalcogenide layer. Detailed analysis of halogen doped MoX2/graphene heterostructures demonstrated the induction of spin polarization in graphene near the Fermi energy. Significant spin polarization near the Fermi energy and n-type doping were observed in the graphene layer of MoSe2/graphene heterostructures with MoSe2 doped with iodine. At the same time, fluorine-doped MoSe2 does not cause n-doping in graphene, while spin polarization still takes place. The possibility for the detection of the arrangement of the halogen impurities at the MoX2 basal plane even with the graphene layer deposited on top was demonstrated through STM measurements which will be undoubtedly useful for the fabrication of electronic schemes and elements based on the proposed heterostructures for their further application in nanoelectronics and spintronics.