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Huang H, Peng C, Xu M, Chen L, Li X. Dependence of a Hydrogen Buffer Layer on the Properties of Top-Gate IGZO TFT. MICROMACHINES 2024; 15:722. [PMID: 38930691 PMCID: PMC11205436 DOI: 10.3390/mi15060722] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/14/2024] [Revised: 05/28/2024] [Accepted: 05/28/2024] [Indexed: 06/28/2024]
Abstract
In this paper, the effect of a buffer layer created using different hydrogen-containing ratios of reactive gas on the electrical properties of a top-gate In-Ga-Zn-O thin-film transistor was thoroughly investigated. The interface roughness between the buffer layer and active layer was characterized using atomic force microscopy and X-ray reflection. The results obtained using Fourier transform infrared spectroscopy show that the hydrogen content of the buffer layer increases with the increase in the hydrogen content of the reaction gas. With the increase in the hydrogen-containing materials in the reactive gas, field effect mobility and negative bias illumination stress stability improve nearly twofold. The reasons for these results are explained using technical computer-aided design simulations.
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Affiliation(s)
- Huixue Huang
- Shanghai Collaborative Innovation Center of Intelligent Sensing Chip Technology, Shanghai University, Shanghai 201800, China; (H.H.); (M.X.)
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai 200072, China;
| | - Cong Peng
- Shanghai Collaborative Innovation Center of Intelligent Sensing Chip Technology, Shanghai University, Shanghai 201800, China; (H.H.); (M.X.)
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai 200072, China;
| | - Meng Xu
- Shanghai Collaborative Innovation Center of Intelligent Sensing Chip Technology, Shanghai University, Shanghai 201800, China; (H.H.); (M.X.)
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai 200072, China;
| | - Longlong Chen
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai 200072, China;
| | - Xifeng Li
- Shanghai Collaborative Innovation Center of Intelligent Sensing Chip Technology, Shanghai University, Shanghai 201800, China; (H.H.); (M.X.)
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai 200072, China;
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New Simulation Method for Dependency of Device Degradation on Bending Direction and Channel Length. MATERIALS 2021; 14:ma14206167. [PMID: 34683758 PMCID: PMC8541256 DOI: 10.3390/ma14206167] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/01/2021] [Revised: 10/01/2021] [Accepted: 10/14/2021] [Indexed: 11/17/2022]
Abstract
The dependency of device degradation on bending direction and channel length is analyzed in terms of bandgap states in amorphous indium-gallium-zinc-oxide (a-IGZO) films. The strain distribution in an a-IGZO film under perpendicular and parallel bending of a device with various channel lengths is investigated by conducting a three-dimensional mechanical simulation. Based on the obtained strain distribution, new device simulation structures are suggested in which the active layer is defined as consisting of multiple regions. The different arrangements of a highly strained region and density of states is proportional to the strain account for the measurement tendency. The analysis performed using the proposed structures reveals the causes underlying the effects of different bending directions and channel lengths, which cannot be explained using the existing simulation methods in which the active layer is defined as a single region.
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Han JH, Lee SH, Jeong SG, Kim DY, Yang HL, Lee S, Yoo SY, Park I, Park HB, Lim KS, Yang WJ, Choi HC, Park JS. Atomic-Layer-Deposited SiO x/SnO x Nanolaminate Structure for Moisture and Hydrogen Gas Diffusion Barriers. ACS APPLIED MATERIALS & INTERFACES 2021; 13:39584-39594. [PMID: 34383478 DOI: 10.1021/acsami.1c09901] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
High-density SnOx and SiOx thin films were deposited via atomic layer deposition (ALD) at low temperatures (100 °C) using tetrakis(dimethylamino)tin(IV) (TDMASn) and di-isopropylaminosilane (DIPAS) as precursors and hydrogen peroxide (H2O2) and O2 plasma as reactants, respectively. The thin-film encapsulation (TFE) properties of SnOx and SiOx were demonstrated with thickness dependence measurements of the water vapor transmission rate (WVTR) evaluated at 50 °C and 90% relative humidity, and different TFE performance tendencies were observed between thermal and plasma ALD SnOx. The film density, crystallinity, and pinholes formed in the SnOx film appeared to be closely related to the diffusion barrier properties of the film. Based on the above results, a nanolaminate (NL) structure consisting of SiOx and SnOx deposited using plasma-enhanced ALD was measured using WVTR (H2O molecule diffusion) at 2.43 × 10-5 g/m2 day with a 10/10 nm NL structure and time-lag gas permeation measurement (H2 gas diffusion) for applications as passivation layers in various electronic devices.
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Affiliation(s)
- Ju-Hwan Han
- Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea
| | - Seong-Hyeon Lee
- Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea
| | - Seok-Goo Jeong
- Division of Nanoscale Semiconductor Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea
| | - Dong-Yeon Kim
- Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea
| | - Hae Lin Yang
- Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea
| | - Seunghwan Lee
- Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea
| | - Seung Yeon Yoo
- Department of Energy Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea
| | - Inho Park
- Department of Energy Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea
| | - Ho Bum Park
- Department of Energy Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea
| | - Kwang-Su Lim
- E2 Block LG Science Park (LG Display), 30, Magokjungang 10-ro, Gangseo-gu, Seoul 07796, Republic of Korea
| | - Won-Jae Yang
- E2 Block LG Science Park (LG Display), 30, Magokjungang 10-ro, Gangseo-gu, Seoul 07796, Republic of Korea
| | - Hyun-Chul Choi
- E2 Block LG Science Park (LG Display), 30, Magokjungang 10-ro, Gangseo-gu, Seoul 07796, Republic of Korea
| | - Jin-Seong Park
- Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea
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Stallings K, Smith J, Chen Y, Zeng L, Wang B, Di Carlo G, Bedzyk MJ, Facchetti A, Marks TJ. Self-Assembled Nanodielectrics for Solution-Processed Top-Gate Amorphous IGZO Thin-Film Transistors. ACS APPLIED MATERIALS & INTERFACES 2021; 13:15399-15408. [PMID: 33779161 DOI: 10.1021/acsami.1c00249] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Metal oxide semiconductors, such as amorphous indium gallium zinc oxide (a-IGZO), have made impressive strides as alternatives to amorphous silicon for electronics applications. However, to achieve the full potential of these semiconductors, compatible unconventional gate dielectric materials must also be developed. To this end, solution-processable self-assembled nanodielectrics (SANDs) composed of structurally well-defined and durable nanoscopic alternating organic (e.g., stilbazolium) and inorganic oxide (e.g., ZrOx and HfOx) layers offer impressive capacitances and low processing temperatures (T ≤ 200 °C). While SANDs have been paired with diverse semiconductors and have yielded excellent device metrics, they have never been implemented in the most technologically relevant top-gate thin-film transistor (TFT) architecture. Here, we combine solution-processed a-IGZO with solution-processed four-layer Hf-SAND to fabricate top-gate TFTs, which exhibit impressive electron mobilities (μSAT = 19.4 cm2 V-1 s-1) and low threshold voltages (Vth = 0.83 V), subthreshold slopes (SS = 293 mV/dec), and gate leakage currents (10-10 A) as well as high bias stress stability.
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Affiliation(s)
- Katie Stallings
- Department of Chemistry and Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Jeremy Smith
- Department of Chemistry and Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Yao Chen
- Department of Chemistry and Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Li Zeng
- Applied Physics Program and the Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Binghao Wang
- Department of Chemistry and Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Gabriele Di Carlo
- Department of Chemistry and Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Michael J Bedzyk
- Department of Materials Science and Engineering, Applied Physics Program and the Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Antonio Facchetti
- Department of Chemistry and Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
- Flexterra Inc., 8025 Lamon Avenue, Skokie, Illinois 60077, United States
| | - Tobin J Marks
- Department of Chemistry and Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
- Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
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Kim KT, Moon S, Kim M, Jo JW, Park CY, Kang SH, Kim YH, Park SK. Highly Scalable and Robust Mesa-Island-Structure Metal-Oxide Thin-Film Transistors and Integrated Circuits Enabled by Stress-Diffusive Manipulation. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2003276. [PMID: 32875685 DOI: 10.1002/adma.202003276] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/13/2020] [Revised: 07/23/2020] [Indexed: 06/11/2023]
Abstract
The increasing interest in flexible and wearable electronics has demanded a dramatic improvement of mechanical robustness in electronic devices along with high-resolution implemented architectures. In this study, a site-specific stress-diffusive manipulation is demonstrated to fulfill highly robust and ultraflexible amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) and integrated circuits. The photochemically activated combustion sol-gel a-IGZO TFTs on a mesa-structured polyimide show an average saturation mobility of 6.06 cm2 V-1 s-1 and a threshold voltage of -0.99 V with less than 9% variation, followed by 10 000 bending cycles with a radius of 125 μm. More importantly, the site-specific monolithic formation of mesa pillar-structured devices can provide fully integrated logic circuits such as seven-stage ring-oscillators, meeting the industrially needed device density and scalability. To exploit the underlying stress-diffusive mechanism, a physical model is provided by using a variety of chemical, structural, and electrical characterizations along with multidomain finite-element analysis simulation. The physical models reveal that a highly scalable and robust device can be achieved via the site-specific mesa architecture, by enabling generation of multineutral layers and fine-tuning the accumulated stresses on specific element of devices with their diffusion out into the boundary of the mesa regions.
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Affiliation(s)
- Kyung-Tae Kim
- School of Electrical and Electronics Engineering, Chung-Ang University, Seoul, 156-756, South Korea
| | - Sanghee Moon
- School of Electrical and Electronics Engineering, Chung-Ang University, Seoul, 156-756, South Korea
| | - Minho Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 16419, South Korea
| | - Jeong-Wan Jo
- Electrical Engineering Division, Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge, CB3 0FA, UK
| | - Chan-Yong Park
- School of Electrical and Electronics Engineering, Chung-Ang University, Seoul, 156-756, South Korea
| | - Seung-Han Kang
- School of Electrical and Electronics Engineering, Chung-Ang University, Seoul, 156-756, South Korea
| | - Yong-Hoon Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 16419, South Korea
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, South Korea
| | - Sung Kyu Park
- School of Electrical and Electronics Engineering, Chung-Ang University, Seoul, 156-756, South Korea
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