Identifying Performance-Limiting Deep Traps in Ta3N5 for Solar Water Splitting

Precise analyses of photoelectrochemical reactions on particulate Zn0.25Cd0.75Se photoanodes in nonaqueous electrolytes using Ru bipyridyl complexes as a probe

Recombination of photoexcited carriers at interface states is generally believed to strongly govern the photoelectrochemical (PEC) performance of semiconductors in electrolytes. Sacrificial reagents (e.g., methanol or Na2SO3) are often used to assess the ideal PEC performance of photoanodes in cases of minimised interfacial recombination kinetics as well as accelerated surface reaction kinetics. However, varying the sacrificial reagents in the electrolyte means simultaneously changing the equilibrium potential and the number of electrons required to perform the sacrificial reaction, and thus the thermodynamic and kinetic aspects of the PEC reactions cannot be distinguished. In the present study, we propose an alternative methodology to experimentally evaluate the energy levels of interfacial recombination centres that can reduce PEC performance. We prepare nonaqueous electrolytes containing three different Ru complexes with different bipyridyl ligands; redox reactions of Ru complexes represent one-electron processes with similar charge transfer rates and diffusion coefficients. Therefore, the Ru complexes can serve as a probe to isolate and evaluate only the thermodynamic aspects of PEC reactions. Recombination centres at the interface between a nonaqueous electrolyte and a Zn0.25Cd0.75Se particulate photoanode are elucidated using this method as a model case. The energy level at which photocorrosion proceeds is also determined.

Polysulfide regulation by defect-modulated Ta3N5-x electrocatalyst toward superior room-temperature sodium-sulfur batteries

Resolving low sulfur reaction activity and severe polysulfide dissolution remains challenging in metal-sulfur batteries. Motivated by a theoretical prediction, herein, we strategically propose nitrogen-vacancy tantalum nitride (Ta3N5-x) impregnated inside the interconnected nanopores of nitrogen-decorated carbon matrix as a new electrocatalyst for regulating sulfur redox reactions in room-temperature sodium-sulfur batteries. Through a pore-constriction mechanism, the nitrogen vacancies are controllably constructed during the nucleation of Ta3N5-x. The defect manipulation on the local environment enables well-regulated Ta 5d-orbital energy level, not only modulating band structure toward enhanced intrinsic conductivity of Ta-based materials, but also promoting polysulfide stabilization and achieving bifunctional catalytic capability toward completely reversible polysulfide conversion. Moreover, the interconnected continuous Ta3N5-x-in-pore structure facilitates electron and sodium-ion transport and accommodates volume expansion of sulfur species while suppressing their shuttle behavior. Due to these attributes, the as-developed Ta3N5-x-based electrode achieves superior rate capability of 730 mAh g-1 at 3.35 A g-1, long-term cycling stability over 2000 cycles, and high areal capacity over 6 mAh cm-2 under high sulfur loading of 6.2 mg cm-2. This work not only presents a new sulfur electrocatalyst candidate for metal-sulfur batteries, but also sheds light on the controllable material design of defect structure in hopes of inspiring new ideas and directions for future research.

Oxygen evolution reaction (OER) active sites in BiVO4 studied using density functional theory and XPS experiments

Bismuth vanadate (BiVO4/BVO) has been widely studied as a photocatalytic water splitting semiconductor material in recent years because of its many advantages, such as its ease of synthesis and suitable band gap (2.4 eV). However, BVO still has some disadvantages, one of which is the low photocatalytic water oxidation activity. It is intriguing and unexpected to note that in the current literature, Bi atoms are taken as the oxygen evolution reaction (OER) active sites, while V metal atoms are not investigated in the OER, and the underlying reason for this remains unknown. In this work, using density functional theory (DFT) calculations and ab initio molecular dynamics simulations, we found that in BVO, the VO4 tetrahedron structure is very stable and there is strong surface reconstruction that leads to the V atoms on the surface having the same coordinates as in the bulk. For some high index surfaces, there are some theoretically predicted unsaturated V sites, but it is very easy to form a VO4 tetrahedron structure again by taking oxygen atoms from water. The other intermediates of OER are difficult to adsorb or desorb on this VO4 structure, which makes the V sites in BVO unsuitable as OER active sites. This VO4 structure remained stable during the molecular dynamics simulation at 300 and 673 K. The XPS characterization of various BVO morphologies validates our primary findings from DFT and molecular dynamics simulations. It reveals the presence of unsaturated Bi sites on the BVO surface, while unsaturated V sites are not observed. This study provides novel insights into the enhancement of OER activity of BVO and offers a fundamental understanding of OER activity in other photocatalysts containing V atoms.

Engineering band structuring via dual atom modification for an efficient photoanode

Efficient carrier separation is important for improving photoelectrochemical water splitting. Here, the morphology modification and band structure engineering of Ta3N5 are accomplished by doping it with Cu and Zr using a two-step method for the first time. The initially interstitially-doped Cu atoms act as anchors to interact with subsequently doped Zr atoms under the influence of differences in electronegativity. This interaction results in Cu,Zrg-Ta3N5 having a dense morphology and higher crystallinity, which helps to reduce carrier recombination at grain boundaries. Furthermore, the gradient doping of Zr generates a band edge energy gradient, which significantly enhances bulk charge separation efficiency. Therefore, a photoanode based on Cu,Zrg-Ta3N5 delivers an onset potential of 0.38 VRHE and a photocurrent density of 8.9 mA cm-2 at 1.23 VRHE. Among all the Ta3N5-based photoanodes deposited on FTO, a Cu,Zrg-Ta3N5-based photoanode has the lowest onset potential and highest photocurrent. The novel material morphology regulation and band edge position engineering strategies described herein provide new ideas for the preparation of other semiconductor nanoparticles to improve the photoelectrochemical water splitting performance.

Exploration of the origin of the excellent charge-carrier dynamics in Ruddlesden-Popper oxysulfide perovskite Y2Ti2O5S2

Although the efficient separation of electron-hole (e-h) pairs is one of the most sought-after electronic characteristics of materials, due to thermally induced atomic motion and other factors, they do not remain separated during the carrier transport process, potentially leading to rapid carrier recombination. Here, we utilized real-time time-dependent density functional theory in combination with nonadiabatic molecular dynamics (NAMD) to explore the separated dynamic transport path within Ruddlesden-Popper oxysulfide perovskite Y2Ti2O5S2 caused by the dielectric layer and phonon frequency difference. The underlying origin of the efficient overall water splitting in Y2Ti2O5S2 is systematically explored. We report the existence of the bi-directional e-h separate-path transport, in which, the electrons transport in the Ti2O5 layer and the holes diffuse in the rock-salt layer. This is in contrast to the conventional e-h separated distribution with a crowded transport channel, as observed in SrTiO3 and hybrid perovskites. Such a unique feature finally results in a long carrier lifetime of 321 ns, larger than that in the SrTiO3 perovskite (160 ns) with only one carrier transport channel. This work provides insights into the carrier transport in lead-free perovskites and yields a novel design strategy for next-generation functionalized optoelectronic devices.

Enhanced Spatial Charge Separation in a Niobium and Tantalum Nitride Core-Shell Photoanode: In Situ Interface Bonding for Efficient Solar Water Splitting

Tantalum nitride (Ta3 N5 ) has emerged as a promising photoanode material for photoelectrochemical (PEC) water splitting. However, the inefficient electron-hole separation remains a bottleneck that impedes its solar-to-hydrogen conversion efficiency. Herein, we demonstrate that a core-shell nanoarray photoanode of NbNx -nanorod@Ta3 N5 ultrathin layer enhances light harvesting and forms a spatial charge-transfer channel, which leads to the efficient generation and extraction of charge carriers. Consequently, an impressive photocurrent density of 7 mA cm-2 at 1.23 VRHE is obtained with an ultrathin Ta3 N5 shell thickness of less than 30 nm, accompanied by excellent stability and a low onset potential (0.46 VRHE ). Mechanistic studies reveal the enhanced performance is attributed to the high-conductivity NbNx core, high-crystalline Ta3 N5 mono-grain shell, and the intimate Ta-N-Nb interface bonds, which accelerate the charge-separation capability of the core-shell photoanode. This study demonstrates the key roles of nanostructure design in improving the efficiency of PEC devices.

Imperfect makes perfect: defect engineering of photoelectrodes towards efficient photoelectrochemical water splitting

Photoelectrochemical (PEC) water splitting for hydrogen evolution has been considered as a promising technology to solve the energy and environmental issues. However, the solar-to-hydrogen (STH) conversion efficiencies of current PEC systems are far from meeting the commercial demand (10%) due to the lack of efficient photoelectrode materials. The recent rapid development of defect engineering of photoelectrodes has significantly improved the PEC performance, which is expected to break through the bottleneck of low STH efficiency. In this review, the category and the construction methods of different defects in photoelectrode materials are summarized. Based on the in-depth summary and analysis of existing reports, the PEC performance enhancement mechanism of defect engineering is critically discussed in terms of light absorption, carrier separation and transport, and surface redox reactions. Finally, the application prospects and challenges of defect engineering for PEC water splitting are presented, and the future research directions in this field are also proposed.

Characterizing Density and Spatial Distribution of Trap States in Ta3N5 Thin Films for Rational Defect Passivation

Tantalum nitride (Ta₃N₅) has gained significant attention as a potential photoanode material, yet it has been challenged by material quality issues. Defect-induced trap states are detrimental to the performance of any semiconductor material. Beyond influencing the performance of Ta₃N₅ films, defects can also accelerate the degradation in water during desired electrochemical applications. Defect passivation has provided an enormous boost to the development of many semiconductor materials but is currently in its infancy for Ta₃N₅. This is in part due to a lack of experimental understanding regarding the spatial and energetic distribution of trap states throughout Ta₃N₅ thin films. Here, we employ drive-level capacitance profiling (DLCP) to experimentally resolve the spatial and energetic distribution of trap states throughout Ta₃N₅ thin films. The density of deeper energetic traps is found to reach ∼2.5 to 6 × 10²² cm^-3 at the interfaces of neat Ta₃N₅ thin films, over an order of magnitude greater than the bulk. In addition to the spatial profile of deep trap states, we report neat Ta₃N₅ thin films to be highly n-type in nature, owning a free carrier density of ∼9.74 × 10¹⁷ cm^-3. This information, coupled with the present understanding of native oxide layers on Ta₃N₅, has facilitated the rational design of a targeted passivation strategy that simultaneously provides a means for catalyst immobilization. Loading catalyst via silatrane moieties suppresses the density of defects at the surface of Ta₃N₅ thin films by two orders of magnitude, while also reducing the free carrier density of films by over one order of magnitude, effectively dedoping the films to ∼2.40 × 10¹⁶ cm^-3. The surface passivation of Ta₃N₅ films translates to suppressed defect-induced trapping and recombination of photoexcited carriers, as determined through absorption, photoluminescence, and transient photovoltage. This illustrates how developing a deeper understanding of the distribution and influence of defects in Ta₃N₅ thin films has the potential to guide future works and ultimately accelerate the integration and development of high-performance Ta₃N₅ thin film devices.

Ta3N5 Nanobelt-Loaded Ru Nanoparticle Hybrids' Electrocatalysis for Hydrogen Evolution in Alkaline Media

Electrochemical hydrogen evolution is a highly efficient way to produce hydrogen, but since it is limited by high-cost electrocatalysts, the preparation of high-efficiency electrocatalysts with fewer or free noble metals is important. Here, Ta₃N₅ nanobelt (NB)-loaded Ru nanoparticle (NP) hybrids with various ratios, including 1~10 wt% Ru/Ta₃N₅, are constructed to electrocatalyze water splitting for a hydrogen evolution reaction (HER) in alkaline media. The results show that 5 wt% Ru/Ta₃N₅ NBs have good HER properties with an overpotential of 64.6 mV, a Tafel slope of 84.92 mV/dec at 10 mA/cm² in 1 M of KOH solution, and good stability. The overpotential of the HER is lower than that of Pt/C (20 wt%) at current densities of 26.3 mA/cm² or more. The morphologies and structures of the materials are characterized by scanning electron microscopy and high-resolution transmission electron microscopy, respectively. X-ray photoelectron energy spectroscopy (XPS) demonstrates that a good HER performance is generated by the synergistic effect and electronic transfer of Ru to Ta₃N₅. Our electrochemical analyses and theoretical calculations indicate that Ru/Ta₃N₅ interfaces play an important role as real active sites.

Decoupling light absorption and carrier transport via heterogeneous doping in Ta3N5 thin film photoanode

The trade-off between light absorption and carrier transport in semiconductor thin film photoelectrodes is a major limiting factor of their solar-to-hydrogen efficiency for photoelectrochemical water splitting. Herein, we develop a heterogeneous doping strategy that combines surface doping with bulk gradient doping to decouple light absorption and carrier transport in a thin film photoelectrode. Taking La and Mg doped Ta₃N₅ thin film photoanode as an example, enhanced light absorption is achieved by surface La doping through alleviating anisotropic optical absorption, while efficient carrier transport in the bulk is maintained by the gradient band structure induced by gradient Mg doping. Moreover, the homojunction formed between the La-doped layer and the gradient Mg-doped layer further promotes charge separation. As a result, the heterogeneously doped photoanode yields a half-cell solar-to-hydrogen conversion efficiency of 4.07%, which establishes Ta₃N₅ as a leading performer among visible-light-responsive photoanodes. The heterogeneous doping strategy could be extended to other semiconductor thin film light absorbers to break performance trade-offs by decoupling light absorption and carrier transport.

Enhanced Overall Water Splitting by a Zirconium-Doped TaON-Based Photocatalyst

Solar-powered one-step-excitation overall water splitting (OWS) using semiconducting materials is a simple means of achieving scalable and sustainable hydrogen production. While tantalum oxynitride (TaON) is one of the few photocatalysts capable of promoting OWS via single-step visible-light excitation, the efficiency of this process remains extremely poor. The present work employed 15 nm amorphous Ta₂ O₅ ⋅3.3 H₂ O nanoparticles as a new precursor together with Zr doping and an optimized nitridation duration to synthesize a TaON-based photocatalyst with reduced particle sizes and low defect densities. Upon loading with Ru/Cr₂ O₃ /IrO₂ cocatalysts, this material exhibited stoichiometric water splitting into hydrogen and oxygen, with an order of magnitude improvement in efficiency. Our findings demonstrate the importance of inventing/selecting the appropriate synthetic precursor and of defect control for fabricating active OWS photocatalysts.

Interface engineering of Ta3N5 thin film photoanode for highly efficient photoelectrochemical water splitting

Interface engineering is a proven strategy to improve the efficiency of thin film semiconductor based solar energy conversion devices. Ta₃N₅ thin film photoanode is a promising candidate for photoelectrochemical (PEC) water splitting. Yet, a concerted effort to engineer both the bottom and top interfaces of Ta₃N₅ thin film photoanode is still lacking. Here, we employ n-type In:GaN and p-type Mg:GaN to modify the bottom and top interfaces of Ta₃N₅ thin film photoanode, respectively. The obtained In:GaN/Ta₃N₅/Mg:GaN heterojunction photoanode shows enhanced bulk carrier separation capability and better injection efficiency at photoanode/electrolyte interface, which lead to a record-high applied bias photon-to-current efficiency of 3.46% for Ta₃N₅-based photoanode. Furthermore, the roles of the In:GaN and Mg:GaN layers are distinguished through mechanistic studies. While the In:GaN layer contributes mainly to the enhanced bulk charge separation efficiency, the Mg:GaN layer improves the surface charge inject efficiency. This work demonstrates the crucial role of proper interface engineering for thin film-based photoanode in achieving efficient PEC water splitting.

Solar-to-fuel energy conversion requires well-designed materials properties to ensure favorable charge carrier movement. Here, authors employ interface engineering of Ta₃N₅ thin film to enhance bulk carrier separation and interface carrier injection to improve the water-splitting efficiency.

LaTaON2 Mesoporous Single Crystals for Efficient Photocatalytic Water Oxidation and Z-Scheme Overall Water Splitting

LaTaON₂ porous single crystals (PSCs), integrating structural coherence and porous microstructures, will warrant promising photocatalytic performance. The absence of grain boundaries in PSCs ensures rapid photocarrier transportation from bulk to the surface, thereby mitigating photocarriers' recombination. Porous microstructures not only provide ample reachable surface to host photochemical reactions but also reinforce photon-matter interactions by additional photon reflection/scattering. Here, we have synthesized LaTaON₂ PSCs via a topotactic route and show significantly improved photocatalytic performance. Efficient water oxidation into O₂ has been realized by LaTaON₂ PSCs with an apparent quantum efficiency as high as 5.7% at 420 ± 20 nm. Stable overall water splitting into stoichiometric H₂ and O₂ has also been achieved in a Z-scheme setup using LaTaON₂ PSCs as the O₂ evolution photocatalyst. These results not only prove that PSCs facilitate photocarrier migrations, which in turn deliver exceptional photocatalytic performance, but also imply that PSCs are useful to reinvigorate conventional semiconductor photocatalysts toward efficient solar energy conversions.

Identifying Reactive Sites and Surface Traps in Chalcopyrite Photocathodes

Gathering information on the atomic nature of reactive sites and trap states is key to fine tuning catalysis and suppressing deleterious surface voltage losses in photoelectrochemical technologies. Here, spectroelectrochemical and computational methods were combined to investigate a model photocathode from the promising chalcopyrite family: CuIn_0.3Ga_0.7S₂. We found that voltage losses are linked to traps induced by surface Ga and In vacancies, whereas operando Raman spectroscopy revealed that catalysis occurred at Ga, In, and S sites. This study allows establishing a bridge between the chalcopyrite's performance and its surface's chemistry, where avoiding formation of Ga and In vacancies is crucial for achieving high activity.

Indirect bandgap, optoelectronic properties, and photoelectrochemical characteristics of high-purity Ta3N5 photoelectrodes

The (opto)electronic properties of Ta3N5 photoelectrodes are often dominated by defects, such as oxygen impurities, nitrogen vacancies, and low-valent Ta cations, impeding fundamental studies of its electronic structure, chemical stability, and photocarrier transport. Here, we explore the role of ammonia annealing following direct reactive magnetron sputtering of tantalum nitride thin films, achieving near-ideal stoichiometry, with significantly reduced native defect and oxygen impurity concentrations. By analyzing structural, optical, and photoelectrochemical properties as a function of ammonia annealing temperature, we provide new insights into the basic semiconductor properties of Ta3N5, as well as the role of defects on its optoelectronic characteristics. Both the crystallinity and material quality improve up to 940 °C, due to elimination of oxygen impurities. Even higher annealing temperatures cause material decomposition and introduce additional disorder within the Ta3N5 lattice, leading to reduced photoelectrochemical performance. Overall, the high material quality enables us to unambiguously identify the nature of the Ta3N5 bandgap as indirect, thereby resolving a long-standing controversy regarding the most fundamental characteristic of this material as a semiconductor. The compact morphology, low defect content, and high optoelectronic quality of these films provide a basis for further optimization of photoanodes and may open up further application opportunities beyond photoelectrochemical energy conversion.

Simultaneously Tuning the Defects and Surface Properties of Ta3N5 Nanoparticles by Mg-Zr Codoping for Significantly Accelerated Photocatalytic H2 Evolution

The simultaneous control of the defect species and surface properties of semiconducting materials is a crucial aspect of improving photocatalytic performance, yet it remains challenging. Here, we synthesized Mg-Zr-codoped single-crystalline Ta₃N₅ (Ta₃N₅:Mg+Zr) nanoparticles by a brief NH₃ nitridation process, exhibiting photocatalytic water reduction activity 45 times greater than that of pristine Ta₃N₅ under visible light. A coherent picture of the relations between the defect species (comprising reduced Ta, nitrogen vacancies and oxygen impurities), surface properties (associated with dispersion of the Pt cocatalyst), charge carrier dynamics, and photocatalytic activities was drawn. The tuning of defects and simultaneous optimization of surface properties resulting from the codoping evidently resulted in the generation of high concentrations of long-lived electrons in this material as well as the efficient migration of these electrons to evenly distributed surface Pt sites. These effects greatly enhanced the photocatalytic activity. This work highlights the importance and feasibility of improving multiple properties of a catalytic material via a one-step strategy.

Metastable Ta2N3 with highly tunable electrical conductivity via oxygen incorporation

The binary Ta-N chemical system includes several compounds with notable prospects in microelectronics, solar energy harvesting, and catalysis. Among these, metallic TaN and semiconducting Ta3N5 have garnered significant interest, in part due to their synthetic accessibility. However, tantalum sesquinitride (Ta2N3) possesses an intermediate composition and largely unknown physical properties owing to its metastable nature. Herein, Ta2N3 is directly deposited by reactive magnetron sputtering and its optoelectronic properties are characterized. Combining these results with density functional theory provides insights into the critical role of oxygen in both synthesis and electronic structure. While the inclusion of oxygen in the process gas is critical to Ta2N3 formation, the resulting oxygen incorporation in structural vacancies drastically modifies the free electron concentration in the as-grown material, thus leading to a semiconducting character with a 1.9 eV bandgap. Reducing the oxygen impurity concentration via post-synthetic ammonia annealing increases the conductivity by seven orders of magnitude and yields the metallic characteristics of a degenerate semiconductor, consistent with theoretical predictions. Thus, this inverse oxygen doping approach - by which the carrier concentration is reduced by the oxygen impurity - offers a unique opportunity to tailor the optoelectronic properties of Ta2N3 for applications ranging from photochemical energy conversion to advanced photonics.