Charge-Carrier Mobility and Localization in Semiconducting Cu2AgBiI6 for Photovoltaic Applications

Tailoring Polaron Dimensions in Lead-Tin Hybrid Perovskites

Charge carriers in the soft and polar perovskite lattice form so-called polaron quasiparticles, charge carriers dressed with a lattice deformation. The spatial extent of a polaron is governed by the material's electron-phonon interaction strength, which determines charge carrier effective mass, mobility, and the so-called Mott polaron density, that is, the maximum stable density of charge carriers that a perovskite can support. Despite its significance, controlling polaron dimensions has been challenging. Here, experimental substantial tuning of polaron dimensions is reported by lattice engineering, through Pb/Sn substitution in CH3NH3SnxPb1-xI3. The polaron dimension is deduced from the Mott polaron density, which can be composition-tuned over an order of magnitude, while charge carrier mobility occurs through band transport, and remains substantial across all compositions, ranging from 10 s to 100 s cm2 V s-1 at room temperature. The effective modulation of polaron size can be understood by considering the bond asymmetry after carrier injection as well as the random spatial distribution of Pb/Sn ions. This study underscores the potential for tailoring polaron dimensions, which is crucial for optimizing applications prioritizing either high charge carrier density or high mobility.

Unraveling the Role of 2D Ti3C2Tx MXene Nanosheets in Cu-Based Double Perovskite Active Layer for Enhanced Photovoltaic Performance

Although the atmospheric stability of lead-free inorganic double perovskite (DP) solar cells (PSCs) looks promising, their further development is hampered by inadequate film quality and non-radiative carrier recombination at the interfaces. Herein, the incorporation of a newly developed intriguing class of 2D material Ti3C2Tx MXene nanosheets with the photo-absorbing Cu2AgBiI6 (CABI) active layer of a fully inorganic solar cell is reported. The highly conductive Ti3C2Tx nanosheets work as a multi-functional additive by tuning the band gap, reducing the non-radiative carrier recombination, and inhibiting carrier accumulation. In addition, the presence of Ti3C2Tx MXene increases the surface free energy of the perovskite film, which elevates the energy barrier for nucleation and realizes a highly crystalline CABI perovskite film. Primarily, the MXene modification accelerates the charge extraction and transport at the interfaces of the active layer, utilizing energy level alignment with the charge transport layers. Consequently, the photo-conversion efficiency (PCE) of the device with MXene is substantially enhanced to 1.50%. Moreover, the 2D Ti3C2Tx nanosheets increased the long-term stability of the devices by retaining 70% of the initial PCE after 1680 h. With regard to relieving the severe carrier recombination at the interfaces, this work sets a new paradigm toward imminent solar energy conversion.

Unraveling Defect-Mediated Enhancement of Transient Photoconductivity and Slower Carrier's Mobility Decay in Cu-Doped Cs2AgBiBr6 Nanocrystals Using Ultrafast Pump-Probe Spectroscopy

Lead-free double perovskite nanocrystals (A2B'(III)B″(I)X6 NCs) address the instability and toxicity concerns of lead-based counterparts, but their device performance is limited by subpar absorption and unexplored carrier dynamics. Impurity ion doping offers a route to tune electrical conductivity and charge carrier transport. Herein, we synthesized Cu-doped Cs2AgBiBr6 (CABB) nanocrystals using a hot-injection approach and investigated the charge carrier's dynamics through ultrafast pump-probe spectroscopy. Copper introduction into the CABB lattice enhanced absorption in the near-infrared region and introduced sub-band gap defect states in CABB NCs. The transient absorption study revealed a faster bleach decay with increased copper doping, as a result of charge transfer from the conduction band to copper defect states. Also, an optical pump terahertz probe study displays higher photoconductivity and mobility in Cu-doped CABB NCs. Slower mobility decay in Cu-doped systems was attributed to the charge carrier's entrapment at the defect state. These findings suggest that copper-doped CABB is a superior contender for optoelectronic applications over conventional CABB.

Halide Engineering in Mixed Halide Perovskite-Inspired Cu2AgBiI6 for Solar Cells with Enhanced Performance

Cu2AgBiI6 (CABI) is a promising perovskite-inspired absorber for solar cells due to its direct band gap and high absorption coefficient. However, the nonradiative recombination caused by the high extrinsic trap density limits the performance of CABI-based solar cells. In this work, we employ halide engineering by doping bromide anions (Br-) in CABI thin films, in turn significantly improving the power conversion efficiency (PCE). By introducing Br- in the synthetic route of CABI thin films, we identify the optimum composition as CABI-10Br (with 10% Br at the halide site). The tailored composition appears to reduce the deep trap density as shown by time-resolved photoluminescence and transient absorption spectroscopy characterizations. This leads to a dramatic increase in the lifetime of charge carriers, which therefore improves both the external quantum efficiency and the integrated short-circuit current. The photovoltaic performance shows a significant boost since the PCE under standard 1 sun illumination increases from 1.32 to 1.69% (∼30% relative enhancement). Systematic theoretical and experimental characterizations were employed to investigate the effect of Br- incorporation on the optoelectronic properties of CABI. Our results highlight the importance of mitigating trap states in lead-free perovskite-inspired materials and that Br- incorporation at the halide site is an effective strategy for improving the device performance.

Alloying Effects on Charge-Carrier Transport in Silver-Bismuth Double Perovskites

Alloying is widely adopted for tuning the properties of emergent semiconductors for optoelectronic and photovoltaic applications. So far, alloying strategies have primarily focused on engineering bandgaps rather than optimizing charge-carrier transport. Here, we demonstrate that alloying may severely limit charge-carrier transport in the presence of localized charge carriers (e.g., small polarons). By combining reflection-transmission and optical pump-terahertz probe spectroscopy with first-principles calculations, we investigate the interplay between alloying and charge-carrier localization in Cs2AgSbxBi1-xBr6 double perovskite thin films. We show that the charge-carrier transport regime strongly determines the impact of alloying on the transport properties. While initially delocalized charge carriers probe electronic bands formed upon alloying, subsequently self-localized charge carriers probe the energetic landscape more locally, thus turning an alloy's low-energy sites (e.g., Sb sites) into traps, which dramatically deteriorates transport properties. These findings highlight the inherent limitations of alloying strategies and provide design tools for newly emerging and highly efficient semiconductors.

Cation-Disorder Engineering Promotes Efficient Charge-Carrier Transport in AgBiS2 Nanocrystal Films

Efficient charge-carrier transport is critical to the success of emergent semiconductors in photovoltaic applications. So far, disorder has been considered detrimental for charge-carrier transport, lowering mobilities, and causing fast recombination. This work demonstrates that, when properly engineered, cation disorder in a multinary chalcogenide semiconductor can considerably enhance the charge-carrier mobility and extend the charge-carrier lifetime. Here, the properties of AgBiS2 nanocrystals (NCs) are explored as a function of Ag and Bi cation-ordering, which can be modified via thermal-annealing. Local Ag-rich and Bi-rich domains formed during hot-injection synthesis are transformed to induce homogeneous disorder (random Ag-Bi distribution). Such cation-disorder engineering results in a sixfold increase in the charge-carrier mobility, reaching ≈2.7 cm2 V-1 s-1 in AgBiS2 NC thin films. It is further demonstrated that homogeneous cation disorder reduces charge-carrier localization, a hallmark of charge-carrier transport recently observed in silver-bismuth semiconductors. This work proposes that cation-disorder engineering flattens the disordered electronic landscape, removing tail states that would otherwise exacerbate Anderson localization of small polaronic states. Together, these findings unravel how cation-disorder engineering in multinary semiconductors can enhance the efficiency of renewable energy applications.

Antimony-Bismuth Alloying: The Key to a Major Boost in the Efficiency of Lead-Free Perovskite-Inspired Photovoltaics

The perovskite-inspired Cu2 AgBiI6 (CABI) material has been gaining increasing momentum as photovoltaic (PV) absorber due to its low toxicity, intrinsic air stability, direct bandgap, and a high absorption coefficient in the range of 105  cm-1 . However, the power conversion efficiency (PCE) of existing CABI-based PVs is still seriously constrained by the presence of both intrinsic and surface defects. Herein, antimony (III) (Sb3+ ) is introduced into the octahedral lattice sites of the CABI structure, leading to CABI-Sb with larger crystalline domains than CABI. The alloying of Sb3+ with bismuth (III) (Bi3+ ) induces changes in the local structural symmetry that dramatically increase the formation energy of intrinsic defects. Light-intensity dependence and electron impedance spectroscopic studies show reduced trap-assisted recombination in the CABI-Sb PV devices. CABI-Sb solar cells feature a nearly 40% PCE enhancement (from 1.31% to 1.82%) with respect to the CABI devices mainly due to improvement in short-circuit current density. This work will promote future compositional design studies to enhance the intrinsic defect tolerance of next-generation wide-bandgap absorbers for high-performance and stable PVs.

Bandlike Transport and Charge-Carrier Dynamics in BiOI Films

Following the emergence of lead halide perovskites (LHPs) as materials for efficient solar cells, research has progressed to explore stable, abundant, and nontoxic alternatives. However, the performance of such lead-free perovskite-inspired materials (PIMs) still lags significantly behind that of their LHP counterparts. For bismuth-based PIMs, one significant reason is a frequently observed ultrafast charge-carrier localization (or self-trapping), which imposes a fundamental limit on long-range mobility. Here we report the terahertz (THz) photoconductivity dynamics in thin films of BiOI and demonstrate a lack of such self-trapping, with good charge-carrier mobility, reaching ∼3 cm² V^-1 s^-1 at 295 K and increasing gradually to ∼13 cm² V^-1 s^-1 at 5 K, indicative of prevailing bandlike transport. Using a combination of transient photoluminescence and THz- and microwave-conductivity spectroscopy, we further investigate charge-carrier recombination processes, revealing charge-specific trapping of electrons at defects in BiOI over nanoseconds and low bimolecular band-to-band recombination. Subject to the development of passivation protocols, BiOI thus emerges as a superior light-harvesting semiconductor among the family of bismuth-based semiconductors.

Lead-free perovskite-inspired semiconductors for indoor light-harvesting - the present and the future

Are lead-free perovskite-inspired materials (PIMs) the wise choice for efficient yet sustainable indoor light harvesting? This feature article outlines how wide-bandgap PIMs can provide a positive answer to this compelling question. The wide band gaps can hinder sunlight absorption, in turn limiting the solar cell performance. However, PIMs based on group VA of the periodic table can theoretically lead to an outstanding indoor power conversion efficiency up to 60% when their band gap is ∼2 eV. Yet, the research on PIM-based indoor photovoltaics (IPVs) is still in an early stage with highest indoor device efficiencies up to 10%. This article reviews the recent advancements on PIMs for IPVs and identifies the main limiting factors of device performance, thus suggesting effective strategies to address them. We emphasize the poor operational stability of the IPV devices of PIMs being the key bottleneck for the vast adoption of this technology. We believe that this report can provide a solid scaffolding for further researching this fascinating class of materials, ultimately supporting our vision that, upon extensive advancement of the stability and efficiency, PIMs with wide bandgap will become a contender for the next-generation absorbers for sustainable indoor light harvesting.

Role of Self-Trapped Excitons in the Broadband Emission of Lead-Free Perovskite-Inspired Cu2AgBiI6

The perovskite-inspired Cu2AgBiI6 (CABI) absorber shows promise for low-toxicity indoor photovoltaics. However, the carrier self-trapping in this material limits its photovoltaic performance. Herein, we examine the self-trapping mechanism in CABI by analyzing the excited-state dynamics of its absorption band at 425 nm, which is responsible for the self-trapped exciton emission, using a combination of photoluminescence and ultrafast transient absorption spectroscopies. Photoexcitation in CABI rapidly generates charge carriers in the silver iodide lattice sites, which localize into the self-trapped states and luminesce. Furthermore, a Cu-Ag-I-rich phase that exhibits similar spectral responses as CABI is synthesized, and a comprehensive structural and photophysical study of this phase provides insights into the nature of the excited states of CABI. Overall, this work explains the origin of self-trapping in CABI. This understanding will play a crucial role in optimizing its optoelectronic properties. It also encourages compositional engineering as the key to suppressing self-trapping in CABI.

One-Step Gas-Solid-Phase Diffusion-Induced Elemental Reaction for Bandgap-Tunable CuaAgm1Bim2In/CuI Thin Film Solar Cells

Lead-free inorganic copper-silver-bismuth-halide materials have attracted more and more attention due to their environmental friendliness, high element abundance, and low cost. Here, we developed a strategy of one-step gas-solid-phase diffusion-induced reaction to fabricate a series of bandgap-tunable CuaAgm1Bim2In/CuI bilayer films due to the atomic diffusion effect for the first time. By designing and regulating the sputtered Cu/Ag/Bi metal film thickness, the bandgap of CuaAgm1Bim2In could be reduced from 2.06 to 1.78 eV. Solar cells with the structure of FTO/TiO2/CuaAgm1Bim2In/CuI/carbon were constructed, yielding a champion power conversion efficiency of 2.76%, which is the highest reported for this class of materials owing to the bandgap reduction and the peculiar bilayer structure. The current work provides a practical path for developing the next generation of efficient, stable, and environmentally friendly photovoltaic materials.

Total Luminescence Spectroscopy for Quantification of Temperature Effects on Photophysical Properties of Photoluminescent Materials

Quantification of the temperature effects on the optical properties of photoluminescent (PL) materials is important for a fundamental understanding of both materials optical processes and rational PL materials design and applications. However, existing techniques for studying the temperature effects are limited in their information content. Reported herein is a temperature-dependent total photoluminescence (TPL) spectroscopy technique for probing the temperature dependence of materials optical properties. When used in combination with UV-vis measurements, this TPL method enables experimental quantification of temperature effects on fluorophore fluorescence intensity and quantum yield at any combination of excitation and detection wavelengths, including the fluorophore Stokes-shifted and anti-Stokes-shifted fluorescence. All model polyaromatic hydrocarbon (PAH) and xanthene fluorophores exhibited a strong excitation- and emission-wavelength dependence in their temperature effects. However, the heavy-atom effects used for explaining the strong temperature dependence of brominated anthracenes are not operative with xanthene fluorophores that have heavy atom substitutions. The insights from TPL measurements are important not only for enhancing the fundamental understandings of the materials photophysical properties but also for rational measurement design for applications where the temperature sensitivity of the fluorophore fluorescence is critical. An example application is demonstrated for developing a sensitive and robust ratiometric fluorescence thermometric method for in situ real-time monitoring of sample temperatures inside a fluorescence cuvette placed in a temperature-controlled sample holder.

Enhancing the Microstructure of Perovskite-Inspired Cu-Ag-Bi-I Absorber for Efficient Indoor Photovoltaics

Lead-free perovskite-inspired materials (PIMs) are gaining attention in optoelectronics due to their low toxicity and inherent air stability. Their wide bandgaps (≈2 eV) make them ideal for indoor light harvesting. However, the investigation of PIMs for indoor photovoltaics (IPVs) is still in its infancy. Herein, the IPV potential of a quaternary PIM, Cu₂ AgBiI₆ (CABI), is demonstrated upon controlling the film crystallization dynamics via additive engineering. The addition of 1.5 vol% hydroiodic acid (HI) leads to films with improved surface coverage and large crystalline domains. The morphologically-enhanced CABI+HI absorber leads to photovoltaic cells with a power conversion efficiency of 1.3% under 1 sun illumination-the highest efficiency ever reported for CABI cells and of 4.7% under indoor white light-emitting diode lighting-that is, within the same range of commercial IPVs. This work highlights the great potential of CABI for IPVs and paves the way for future performance improvements through effective passivation strategies.

[SMe3]2[Bi2Ag2I10], a silver iodido bismuthate with an unusually small band gap

Iodido metalates of heavy main group elements have seen much research interest in the last years due to their possible application as absorbers in photovoltaics. However, for materials based on the non-toxic element bismuth one challenge lies in narrowing the optical band gap for sufficient solar absorption. Here, we present a new iodido silver bismuthate, [SMe₃]₂[Bi₂Ag₂I₁₀] (1), which is prepared from solution and characterized regarding its structure, thermal stability and optical absorption. While compounds with similar anion compositions are known, the band gap of 1.82 eV is the smallest in chain-like Bi/Ag/I-compounds that has been reported to date. To support our experimental findings we carried out computational investigations and were able to reproduce the surprisingly narrow band gap, highlighting the subtle influence of the connectivity of different building units in multinary bismuthates. We also prepared and characterized the simple iodido pentelates [SMe]₃[E₂I₉] (E = Bi, Sb; 2, 3) to provide a point of comparison.

Strong absorption and ultrafast localisation in NaBiS2 nanocrystals with slow charge-carrier recombination

I-V-VI₂ ternary chalcogenides are gaining attention as earth-abundant, nontoxic, and air-stable absorbers for photovoltaic applications. However, the semiconductors explored thus far have slowly-rising absorption onsets, and their charge-carrier transport is not well understood yet. Herein, we investigate cation-disordered NaBiS₂ nanocrystals, which have a steep absorption onset, with absorption coefficients reaching >10⁵ cm^-1 just above its pseudo-direct bandgap of 1.4 eV. Surprisingly, we also observe an ultrafast (picosecond-time scale) photoconductivity decay and long-lived charge-carrier population persisting for over one microsecond in NaBiS₂ nanocrystals. These unusual features arise because of the localised, non-bonding S p character of the upper valence band, which leads to a high density of electronic states at the band edges, ultrafast localisation of spatially-separated electrons and holes, as well as the slow decay of trapped holes. This work reveals the critical role of cation disorder in these systems on both absorption characteristics and charge-carrier kinetics.

Halide Double-Perovskite Semiconductors beyond Photovoltaics

Halide double perovskites, A₂M^IM^IIIX₆, offer a vast chemical space for obtaining unexplored materials with exciting properties for a wide range of applications. The photovoltaic performance of halide double perovskites has been limited due to the large and/or indirect bandgap of the presently known materials. However, their applications extend beyond outdoor photovoltaics, as halide double perovskites exhibit properties suitable for memory devices, indoor photovoltaics, X-ray detectors, light-emitting diodes, temperature and humidity sensors, photocatalysts, and many more. This Perspective highlights challenges associated with the synthesis and characterization of halide double perovskites and offers an outlook on the potential use of some of the properties exhibited by this so far underexplored class of materials.

Low-Temperature Solution-Processed Cu2AgBiI6 Films for High Performance Photovoltaics and Photodetectors

Recently, Cu₂AgBiI₆ semiconductor has been investigated due to the high absorption coefficient, direct bandgap, and low exciton binding energy, which are promising for eco-friendly photoelectric devices. Herein, pyridine is introduced as solvent additive to completely dissolve the solutes and form clear Cu₂AgBiI₆ precursor solution, which results in high-quality films and may provide a general approach for high-quality film growth of other bismuth-based metal halide semiconductors. In addition, the electronic structure of Cu₂AgBiI₆ has been demonstrated for the first time and shows an intrinsically weak n-type semiconductor. Furthermore, phenethylammonium iodide for surface passivation significantly improves the film quality, slightly n-dopes the material, and shifts up the band level. Finally, the photovoltaics and photodetector performance for n-i-p planar heterojunction devices have been investigated. The efficiency is up to 1%, highest for Cu₂AgBiI₆ solar cells and comparable with other lead-free bismuth based metal halide solar cells. Moreover, photodetectors with fast speed of rising and decaying time, especially the excellent specific photodetectivity of ∼10¹² Jones within the wavelength of ∼350-600 nm, are achieved, which paves an alternative and promising strategy for the design of future commercial photodetectors that are self-powered, stable, nontoxic, etc.

Doping of Sn-based two-dimensional perovskite semiconductor for high-performance field-effect transistors and thermoelectric devices

Doping is an important technique for semiconductor materials and devices, yet effective and controllable doping of organic-inorganic halide perovskites is still a challenge. Here, we demonstrate a facile way to dope two-dimensional Sn-based perovskite (PEA)2SnI4 by incorporating SnI4 in the precursor solutions. It is observed that Sn4+ produces p-doping effect on the perovskite, which increases the electrical conductivity by 105 times. The dopant SnI4 is also found to improve the film morphology of (PEA)2SnI4, leading to reduced trap states. This doping technique allows us to improve the room temperature mobility of (PEA)2SnI4 field-effect transistors from 0.25 to 0.68 cm2 V-1 s-1 thanks to reduced trapping effects in the doped devices. Moreover, the doping technique enables the characterization and improvement of the thermoelectric performance of (PEA)2SnI4 films, which show a high power factor of 3.92 μW m-1 K-2 at doping ratio of 5 mol %.

Photoinduced Transformation of Cs2Au2Br6 into CsPbBr3 Nanocrystals

Lead-free halide double perovskites offer an environmentally friendly alternative to lead halide perovskites for designing optoelectronic solar cell devices. One simple approach to synthesize such double halide perovskites is through metal ion exchange. CsPbBr₃ nanocrystals undergo exchange of Pb²⁺ with Au(I)/Au(III) to form double perovskite Cs₂Au₂Br₆. When excited, a majority of the charge carriers undergo quick recombination in contrast to long-lived charge carries of excited CsPbBr₃ nanocrystals. This metal ion exchange process is reversible as one can regenerate CsPbBr₃ by adding excess PbBr₂ to the suspension. Interestingly, when subjected to visible light irradiation, Cs₂Au₂Br₆ nanocrystals eject reduced Au from the lattice as evidenced from the formation of larger gold nanoparticles. The presence of residual Pb²⁺ ions in the suspension restores the original CsPbBr₃ composition. The results presented here provide insight into the dynamic nature of Au within the perovskite lattice under both chemical and light stimuli.

White light emission from lead-free mixed-cation doped Cs2SnCl6 nanocrystals

We have designed a synthesis procedure to obtain Cs₂SnCl₆ nanocrystals (NCs) doped with metal ion(s) to emit visible light. Cs₂SnCl₆ NCs doped with Bi³⁺, Te⁴⁺ and Sb³⁺ ions emitted blue, yellow and red light, respectively. In addition, NCs simultaneously doped with Bi³⁺ and Te⁴⁺ ions were synthesized in a single run. Combination of both dopant ions together gives rise to the white emission. The photoluminescence quantum yields of the blue, yellow and white emissions are up to 26.5, 28, and 16.6%, respectively under excitation at 350, 390, and 370 nm. Pure white-light emission with CIE chromaticity coordinates of (0.32, 0.33) and (0.32, 0.32) at 340 and 370 nm excitation wavelength, respectively, was obtained. The as-prepared NCs were found to demonstrate a long-time stability, resistance to humidity, and an ability to be well-dispersed in polar solvents without property degradation due to their hydrophilicity, which could be of significant interest for wide application purposes.

Chemical Control of the Dimensionality of the Octahedral Network of Solar Absorbers from the CuI-AgI-BiI3 Phase Space by Synthesis of 3D CuAgBiI5

A newly reported compound, CuAgBiI₅, is synthesized as powder, crystals, and thin films. The structure consists of a 3D octahedral Ag⁺/Bi³⁺ network as in spinel, but occupancy of the tetrahedral interstitials by Cu⁺ differs from those in spinel. The 3D octahedral network of CuAgBiI₅ allows us to identify a relationship between octahedral site occupancy (composition) and octahedral motif (structure) across the whole CuI–AgI–BiI₃ phase field, giving the ability to chemically control structural dimensionality. To investigate composition–structure–property relationships, we compare the basic optoelectronic properties of CuAgBiI₅ with those of Cu₂AgBiI₆ (which has a 2D octahedral network) and reveal a surprisingly low sensitivity to the dimensionality of the octahedral network. The absorption onset of CuAgBiI₅ (2.02 eV) barely changes compared with that of Cu₂AgBiI₆ (2.06 eV) indicating no obvious signs of an increase in charge confinement. Such behavior contrasts with that for lead halide perovskites which show clear confinement effects upon lowering dimensionality of the octahedral network from 3D to 2D. Changes in photoluminescence spectra and lifetimes between the two compounds mostly derive from the difference in extrinsic defect densities rather than intrinsic effects. While both materials show good stability, bulk CuAgBiI₅ powder samples are found to be more sensitive to degradation under solar irradiation compared to Cu₂AgBiI₆.

We describe a way to chemically control the octahedral network of potentially useful photovoltaic solar absorbers in the CuI−AgI−BiI₃ phase space by the synthesis of CuAgBiI₅ with a 3D octahedral network. We compare the photostability of CuAgBiI₅ bulk samples and the absorption coefficient and photoluminescence of solution processed thin films with those of Cu₂AgBiI₆, which has a 2D octahedral network. This helps to understand structure−property relationships to direct further materials optimization.