2D PEA2SnI4 Inkjet-Printed Halide Perovskite LEDs on Rigid and Flexible Substrates

Free Charge Carrier Generation by Visible-Light-Absorbing Organic Spacers in Ruddlesden-Popper Layered Perovskites

Incorporating organic semiconductor building blocks as spacer cations into layered hybrid perovskites provides an opportunity to develop new materials with novel optoelectronic properties, including nanoheterojunctions that afford spatial separation of electron and hole transport. However, identifying organics with suitable structure and electronic energy levels to selectively absorb visible light has been a challenge in the field. In this work, we introduce a new lead-halide-based Ruddlesden-Popper perovskite structure based on a visible-light-absorbing naphthalene-iminoimide cation (NDI-DAE). Thin films of (NDI-DAE)2PbI4 show a quenched photoluminescence and transient absorption dynamics consistent with the formation of a charge transfer state or free charge carriers when either the inorganic or organic layer is photoexcited, suggesting the formation of a type II nanoheterostructure. Time-resolved microwave conductivity analysis supports free charge generation with sum mobilities up to 4 × 10-4 cm2 V-1 s-1. Mixed halide (NDI-DAE)2Pb(IxBr1-x)4 films show modified inorganic layer band gaps and a photoluminescent reversed type I nanoheterostructure with high bromide content (e.g., for x = 0). At x = 0.5, transient absorption and microwave conductivity measurements provide strong evidence that selective visible-light absorbance by the NDI-DAE cation generates separated free carriers via hole transfer to the inorganic layer (leaving photogenerated electrons in the organic layer), which represents an important step toward enhancing light harvesting and affording the spatial separation of charge carrier transport in stable layered perovskite-based devices.

Synthesis of Hybrid Tin-Based Perovskite Microcrystals for LED Applications

Considerable focus on tin-based perovskites lies on substitution to leadhalide perovskites for the fabrication of eco-friendly optoelectronic devices. The major concern related to tin-based perovskite devices are mainly the stability and the efficiency. However, thinking on the final commercialization scope, other considerations such as precursor stability and cost are major factors to carry about. In this regard, this work presents a robust and facile synthesis of 2D A2SnX4 (A = 4-fluorophenethylammonium(4-FPEA); X = I, Br, I/Br) and 3D FASnI3 perovskite microcrystals following a developed synthesis strategy with low-cost starting materials. In this developed methodology, acetic acid is used as a solvent, which helps to protect from water by making a hydrophobic network over the perovskite surface, and hence provides sufficient ambient and long-term inert atmosphere stability of the microcrystals. Further, the microcrystals are recrystallized in thin films for LED application, allowing the fabrication of orange, near-infrared and purered emitting LEDs. The two-step recrystallized devices show better performance and stability in comparison to the reference devices made by using commercial precursors. Importantly, the developed synthesis methodology is defined as a generic method for the preparation of varieties of hybrid tin-based perovskites microcrystals and application in optoelectronic devices.

Tailoring Single-Mode Random Lasing of Tin Halide Perovskites Integrated in a Vertical Cavity

The development of random lasing (RL) with predictable and controlled properties is an important step to make these cheap optical sources stable and reliable. However, the design of tailored RL characteristics (emission energy, threshold, number of modes) is only obtained with complex photonic structures, while the simplest optical configurations able to tune the RL are still a challenge. This work demonstrates the tuning of the RL characteristics in spin-coated and inkjet-printed tin-based perovskites integrated into a vertical cavity with low quality factor. When the cavity mode is resonant with the photoluminescence (PL) peak energy, standard vertical lasing is observed. More importantly, single mode RL operation with the lowest threshold and a quality factor as high as 1 000 (twenty times the quality factor of the resonator) is obtained if the cavity mode lies above the PL peak energy due to higher gain. These results can have important technological implications toward the development of low-cost RL sources without chaotic behavior.

Optoelectronic insights of lead-free layered halide perovskites

Two-dimensional organic-inorganic halide perovskites have emerged as promising candidates for a multitude of optoelectronic technologies, owing to their versatile structure and electronic properties. The optical and electronic properties are harmoniously integrated with both the inorganic metal halide octahedral slab, and the organic spacer layer. The inorganic octahedral layers can also assemble into periodically stacked nanoplatelets, which are interconnected by the organic ammonium cation, resulting in the formation of a superlattice or superstructure. In this perspective, we explore the structural, electronic, and optical properties of lead-free hybrid halides, and the layered halide perovskite single crystals and nanostructures, expanding our understanding of the diverse applications enabled by these versatile structures. The optical properties of the layered halide perovskite single crystals and superlattices are a function of the organic spacer layer thickness, the metal center with either divalent or a combination of monovalent and trivalent cations, and the halide composition. The distinct absorption and emission features are guided by the structural deformation, electron-phonon coupling, and the polaronic effect. Among the diverse optoelectronic possibilities, we have focused on the photodetection capability of layered halide perovskite single crystals, and elucidated the descriptors such as excitonic band gap, effective mass, carrier mobility, Rashba splitting, and the spin texture that decides the direct component of the optical transitions.

Multicolor vision perception of flexible optoelectronic synapse with high sensitivity for skin sunburn warning

The development of flexible synaptic devices with multicolor signal response is important to exploit advanced artificial visual perception systems. The Sn vacancy-dominant memory and narrow gap characteristics of PEA2SnI4 make it suitable as a functional layer in ultraviolet-visible (UV-Vis) light-stimulated synaptic devices. However, such device tends to have high dark current and poor sensitivity, which is not conducive to subsequent information processing. Here, we proposed a self-powered flexible optoelectronic synapse based on PEA2SnI4 films. By introducing the electron transport layer (ETL), the dark current of the device is decreased by 5 orders of magnitude as compared to the Au/PEA2SnI4/ITO device, and the sensitivity is increased from 10.3% to 99.2% at 1.25 mW cm-2 light illumination (520 nm), indicating the vital role of the introduced ETL in promoting the separation of excitons in the interface and inhibiting the free carrier transfer. On this basis, the optoelectronic synaptic functions with integrated sensing, recognition, and memory features were realized. The array device exhibits UV-Vis light sensitivity and tunable synaptic plasticity, enabling its application for multicolor visual sensing and skin sunburn warning. This work provides an effective strategy for fabricating multicolor intelligent sensors and artificial vision systems, which facilitate the practical application of artificial optoelectronic synapses.

Encapsulation of Pure Water-Stable Perovskite Nanocrystals (PNCs) into Biological Environment-Stable PNCs for Cell Imaging

Recently emerging perovskite nanocrystals (PNCs) are very attractive fluorescence nanomaterials due to their very narrow emission peak, tunable wavelength, and extremely high quantum yield, but their chemosensing, biosensing and bioimaging applications suffer from the poor stability of ordinary PNCs in aqueous media, especially in biological matrices. Recently developed water-stable 2D CsPb2Br5-encapsulated 3D CsPbBr3 PNCs (i.e., CsPbBr3/CsPb2Br5 PNCs) show extremely stable light emission in pure water, but their fluorescence is seriously quenched in aqueous media containing biological molecules due to their chemical reactions. In this work, we used a facile method to encapsulate pure water-stable CsPbBr3/CsPb2Br5 PNCs in water with SiO2 and polyethylene glycol hexadecyl ether (Brij58) into a new kind of biological environment-stable PNCs (CsPbBr3/CsPb2Br5@SiO2-Brij58). The synthesis of the target PNCs can be accomplished in a fast, easy, and green way. The obtained CsPbBr3/CsPb2Br5@SiO2-Brij58 PNCs maintain strong fluorescence emission for a long time, all in pH 7.4 PBS, BSA, and minimum essential medium, exhibiting excellent biological environment stability. Moreover, the developed biological environment-stable PNCs show good biocompatibility and have been successfully used in cell imaging. Overall, the work provides an easy, low-cost, and efficient application of PNCs in bioimaging.

Ligand Engineering Enables Efficient Pure Red Tin-Based Perovskite Light-Emitting Diodes

With increasing ecological and environmental concerns, tin (Sn)-based perovskite light-emitting diodes (PeLEDs) are competitive candidates for future displays because of their environmental friendliness, excellent photoelectric properties, and low-cost solution-processed fabrication. Nonetheless, their electroluminescence (EL) performance still lags behind that of lead (Pb)-based PeLEDs due to the fast crystallization rate of Sn-based perovskite films and undesired oxidation from Sn2+ to Sn4+ , leading to poor film morphology and coverage, as well as high density defects. Here, we propose a ligand engineering strategy to construct high-quality phenethylammonium tin iodide (PEA2 SnI4 ) perovskite films by using L-glutathione reduced (GSH) as surface ligands toward efficient pure red PEA2 SnI4 -based PeLEDs. We show that the hydrogen-bond and coordinate interactions between GSH and PEA2 SnI4 effectively reduce the crystallization rate of the perovskites and suppress the oxidation of Sn2+ and formation of defects. The improved pure red perovskite films not only show excellent uniformity, density, and coverage but also exhibit enhanced optical properties and stability. Finally, state-of-the-art pure red PeLEDs achieve a record external quantum efficiency of 9.32 % in the field of PEA2 SnI4 -based devices. This work demonstrates that ligand engineering represents a feasible route to enhance the EL performance of Sn-based PeLEDs.

Large-Area, Flexible, Lead-Free Sn-Perovskite Solar Modules

For the first time, large-area, flexible organic-inorganic tin perovskite solar modules are fabricated by means of an industry-compatible and scalable blade-coating technique. An 8-cell interconnected mini module with dimensions of 25 cm2 (active area = 8 × 1.5 cm2) reached 5.7% power conversion efficiency under 1000 W/m2 (AM 1.5G) and 9.4% under 2000 lx (white-LED).

Halide Chemistry in Tin Perovskite Optoelectronics: Bottlenecks and Opportunities

Tin halide perovskites (Sn HaPs) are the top lead-free choice for perovskite optoelectronics, but the oxidation of perovskite Sn2+ to Sn4+ remains a key challenge. However, the role of inconspicuous chemical processes remains underexplored. Specifically, the halide component in Sn HaPs (typically iodide) has been shown to play a key role in dictating device performance and stability due to its high reactivity. Here we describe the impact of native halide chemistry on Sn HaPs. Specifically, molecular halogen formation in Sn HaPs and its influence on degradation is reviewed, emphasising the benefits of iodide substitution for improving stability. Next, the ecological impact of halide products of Sn HaP degradation and its mitigation are considered. The development of visible Sn HaP emitters via halide tuning is also summarised. Lastly, halide defect management and interfacial engineering for Sn HaP devices are discussed. These insights will inspire efficient and robust Sn HaP optoelectronics.