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Liu B, Shen H, Zhang J, Chen D, Mao W. CuSCN/Si heterojunction near-infrared photodetector based on micro/nano light-trapping structure. NANOTECHNOLOGY 2023; 34:235501. [PMID: 36857771 DOI: 10.1088/1361-6528/acc039] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/04/2022] [Accepted: 02/28/2023] [Indexed: 06/18/2023]
Abstract
In this paper, high-performance CuSCN/Si heterojunction near-infrared photodetectors were successfully prepared using nanoscale light-trapping optical structures. Various light-trapping structures of ortho-pyramids, inverted pyramids and silicon nanowires were prepared on silicon substrates. Then, CuSCN films were spin-coated on silicon substrates with high crystalline properties for the assembly of CuSCN/Si photodetectors. Their reflectance spectra and interfacial passivation properties were characterized, demonstrating their superiority of light-trapping structures in high light response. Under the irradiation of 980 nm near-infrared light, a maximum responsivity of 2.88 A W-1at -4 V bias and a specific detectivity of 5.427 × 1010Jones were obtained in the CuSCN/Si heterojunction photodetectors prepared on planner silicon due to 3.6 eV band gap of CuSCN. The substrates of the light-trapping structure were then applied to the CuSCN/Si heterojunction photodetectors. A maximum responsivity of 10.16 A W-1and a maximum specific detectivity of 1.001 × 1011Jones were achieved under the 980 nm near-infrared light irradiation and -4 V bias, demonstrating the advanced performance of CuSCN/Si heterojunction photodetectors with micro-nano light-trapping substrates in the field of near-infrared photodetection compared to other silicon-based photodetectors.
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Affiliation(s)
- Biao Liu
- College of Materials Science & Technology, Jiangsu Provincial Key Laboratory of Materials and Technology for Energy Conversion, Nanjing University of Aeronautics & Astronautics, 29 Jiangjun Avenue, Nanjing 211106, People's Republic of China
| | - Honglie Shen
- College of Materials Science & Technology, Jiangsu Provincial Key Laboratory of Materials and Technology for Energy Conversion, Nanjing University of Aeronautics & Astronautics, 29 Jiangjun Avenue, Nanjing 211106, People's Republic of China
- Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering, Changzhou University, Changzhou, 213164, People's Republic of China
| | - Jingzhe Zhang
- College of Materials Science & Technology, Jiangsu Provincial Key Laboratory of Materials and Technology for Energy Conversion, Nanjing University of Aeronautics & Astronautics, 29 Jiangjun Avenue, Nanjing 211106, People's Republic of China
| | - Dewen Chen
- College of Materials Science & Technology, Jiangsu Provincial Key Laboratory of Materials and Technology for Energy Conversion, Nanjing University of Aeronautics & Astronautics, 29 Jiangjun Avenue, Nanjing 211106, People's Republic of China
| | - Weibiao Mao
- College of Materials Science & Technology, Jiangsu Provincial Key Laboratory of Materials and Technology for Energy Conversion, Nanjing University of Aeronautics & Astronautics, 29 Jiangjun Avenue, Nanjing 211106, People's Republic of China
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Sakamoto M, Saitow KI. Fast, Economical, and Reproducible Sensing from a 2D Si Wire Array: Accurate Characterization by Single Wire Spectroscopy. Anal Chem 2022; 94:6672-6680. [PMID: 35475623 DOI: 10.1021/acs.analchem.1c05001] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
Silicon (Si) is promising as a field enhancement material because of its high abundance, low toxicity, and high refractive index. The field enhancement effect intensifies light-matter interactions, which improves photocatalysis, solar cell performance, and sensor sensitivity. To manufacture field enhancement materials on a production scale, the fabrication technique must be simple, cost-effective, fast, and highly reproducible and must produce a high enhancement factor (EF). Herein, we report on an economical and efficient fabrication method for a field enhancement substrate consisting of a two-dimensional Si wire array (2D-SiWA). This substrate was demonstrated as a fluorescence sensor with high sensitivity (EF > 200) and composed of a large area (6.0 mm2). In addition, single wire spectroscopy was used to identify very high reproducibility of the sensor sensitivity in regular regions (97%) and a mixture of regular and irregular regions (87%) of the 2D-SiWA. The large-area Si fluorescence sensor fabrication was cost-effective and rapid and was 50× less expensive, 20×faster, and 60,000×larger than the typical electron beam lithography method.
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Affiliation(s)
- Masanori Sakamoto
- Department of Chemistry, Graduate School of Science, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8526, Japan
| | - Ken-Ichi Saitow
- Department of Chemistry, Graduate School of Science, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8526, Japan.,Department of Materials Science, Natural Science Center for Basic Research and Development (N-BARD), Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8526, Japan.,Graduate School of Advanced Science and Engineering, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima, Higashi-Hiroshima 739-8526, Japan
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Gao Y, Cui M, Qu S, Zhao H, Shen Z, Tan F, Dong Y, Qin C, Wang Z, Zhang W, Wang Z, Lei Y. Efficient Organic Solar Cells Enabled by Simple Non-Fused Electron Donors with Low Synthetic Complexity. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2104623. [PMID: 34837464 DOI: 10.1002/smll.202104623] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/03/2021] [Revised: 10/08/2021] [Indexed: 06/13/2023]
Abstract
Fused-ring electron donors boost the efficiency of organic solar cells (OSCs), but they suffer from high cost and low yield for their large synthetic complexity (SC > 30%). Herein, the authors develop a series of simple non-fused-ring electron donors, PF1 and PF2, which alternately consist of furan-3-carboxylate and 2,2'-bithiophene. Note that PF1 and PF2 present very small SC of 9.7% for their inexpensive raw materials, facile synthesis, and high synthetic yield. Compared to their all-thiophene-backbone counterpart PT-E, two new polymers feature larger conjugated plane, resulting in higher hole mobility for them, especially a value up to ≈10-4 cm2 V-1 ·s for PF2 with longer alkyl side chain. Meanwhile, PF1 and PF2 exhibit larger dielectric constant and deeper electronic energy level versus PT-E. Benefiting from the better physicochemical properties, the efficiencies of PF1- and PF2-based devices are improved by ≈16.7% and ≈71.3% relative to that PT-E-based devices, respectively. Furthermore, the optimized PF2-based devices with introducing PC71 BM as the third component deliver a higher efficiency of 12.40%. The work not only indicates that furan-3-carboxylate is a simple yet efficient building block for constructing non-fused-ring polymers but also provides a promising electron donor PF2 for the low-cost production of OSCs.
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Affiliation(s)
- Yueyue Gao
- Key Laboratory of Photovoltaic Materials, Henan University, Kaifeng, 475004, P. R. China
| | - Minghuan Cui
- Henan Key Laboratory of Infrared Materials & Spectrum Measures and Applications, Henan Normal University, Xinxiang, 453007, P. R. China
| | - Shengchun Qu
- Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
| | - Huaping Zhao
- Fachgebiet Angewandte Nanophysik, Institut für Physik & IMN MacroNano, Technische Universität Ilmenau, 98693, Ilmenau, Germany
| | - Zhitao Shen
- Key Laboratory of Photovoltaic Materials, Henan University, Kaifeng, 475004, P. R. China
| | - Furui Tan
- Key Laboratory of Photovoltaic Materials, Henan University, Kaifeng, 475004, P. R. China
| | - Yulian Dong
- Fachgebiet Angewandte Nanophysik, Institut für Physik & IMN MacroNano, Technische Universität Ilmenau, 98693, Ilmenau, Germany
| | - Chaochao Qin
- Henan Key Laboratory of Infrared Materials & Spectrum Measures and Applications, Henan Normal University, Xinxiang, 453007, P. R. China
| | - Zhijie Wang
- Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
| | - Weifeng Zhang
- Key Laboratory of Photovoltaic Materials, Henan University, Kaifeng, 475004, P. R. China
| | - Zhangguo Wang
- Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
| | - Yong Lei
- Fachgebiet Angewandte Nanophysik, Institut für Physik & IMN MacroNano, Technische Universität Ilmenau, 98693, Ilmenau, Germany
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