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Li X, Chen J, Yu F, Chen X, Lu W, Li G. Achieving a Noise Limit with a Few-layer WSe 2 Avalanche Photodetector at Room Temperature. NANO LETTERS 2024. [PMID: 39320324 DOI: 10.1021/acs.nanolett.4c03450] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/26/2024]
Abstract
We engineered a two-dimensional Pt/WSe2/Ni avalanche photodetector (APD) optimized for ultraweak signal detection at room temperature. By fine-tuning the work functions, we achieved an ultralow dark current of 10-14 A under small bias, with a noise equivalent power (NEP) of 8.09 fW/Hz1/2. This performance is driven by effective dark barrier blocking and a record-long electron mean free path (123 nm) in intrinsic WSe2, minimizing dark carrier replenishment and suppressing noise under an ultralow electric field. Our APD exhibits a high gain of 5 × 105 at a modulation frequency of 20 kHz, effectively balancing gain and bandwidth, a common challenge in traditional photovoltaic-based APDs. By addressing the typical challenges of high noise and low gain and minimizing dependence on high electric fields, this work highlights the potential of 2D materials in developing efficient, low-power, and ultrasensitive photodetections.
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Affiliation(s)
- Xin Li
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai, 200083, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- University of Chinese Academy of Science, No. 19A Yuquan Road, Beijing 100049, China
| | - Jin Chen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai, 200083, China
- University of Chinese Academy of Science, No. 19A Yuquan Road, Beijing 100049, China
| | - Feilong Yu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai, 200083, China
- University of Chinese Academy of Science, No. 19A Yuquan Road, Beijing 100049, China
| | - Xiaoshuang Chen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai, 200083, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- University of Chinese Academy of Science, No. 19A Yuquan Road, Beijing 100049, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No.1 Sub-Lane Xiangshan, Hangzhou, 310024, China
- Shanghai Research Center for Quantum Sciences, 99 Xiupu Road, Shanghai, 201315, China
| | - Wei Lu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai, 200083, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- University of Chinese Academy of Science, No. 19A Yuquan Road, Beijing 100049, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No.1 Sub-Lane Xiangshan, Hangzhou, 310024, China
- Shanghai Research Center for Quantum Sciences, 99 Xiupu Road, Shanghai, 201315, China
| | - Guanhai Li
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai, 200083, China
- University of Chinese Academy of Science, No. 19A Yuquan Road, Beijing 100049, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No.1 Sub-Lane Xiangshan, Hangzhou, 310024, China
- Shanghai Research Center for Quantum Sciences, 99 Xiupu Road, Shanghai, 201315, China
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2
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Choi H, Baek S, Jung H, Kang T, Lee S, Jeon J, Jang BC, Lee S. Spiking Neural Network Integrated with Impact Ionization Field-Effect Transistor Neuron and a Ferroelectric Field-Effect Transistor Synapse. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2406970. [PMID: 39233555 DOI: 10.1002/adma.202406970] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/16/2024] [Revised: 08/02/2024] [Indexed: 09/06/2024]
Abstract
The integration of artificial spiking neurons based on steep-switching logic devices and artificial synapses with neuromorphic functions enables an energy-efficient computer architecture that mimics the human brain well, known as a spiking neural network (SNN). 2D materials with impact ionization or ferroelectric characteristics have the potential for use in such devices. However, research on 2D spiking neurons remains limited and investigations of 2D artificial synapses far more common. An innovative 2D spiking neuron is implemented using a WSe2 impact ionization transistor (I2FET), while a spiking neural network is formed by combining it with a 2D ferroelectric synaptic device (FeFET). The suggested 2D spiking neuron demonstrates precise spiking behavior that closely resembles that of actual neurons. In addition, it achieves a low energy consumption of 2 pJ/spike. The better impact ionization properties of WSe2 are responsible for this efficiency. Furthermore, an all-2D SNN consisting of 2D I2FET neurons and 2D FeFET synapses is constructed, which achieves high accuracy of 87.5% in a face classification task by unsupervised learning. The integration of a 2D SNN with 2D steep-switching spiking neuronal devices and 2D synaptic devices shows great potential for the development of neuromorphic systems with improved energy efficiency and computational capabilities.
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Affiliation(s)
- Haeju Choi
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, South Korea
- Department of Nano Science and Technology, Sungkyunkwan University, Suwon, 16419, South Korea
| | - Sungpyo Baek
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, South Korea
- Department of Nano Science and Technology, Sungkyunkwan University, Suwon, 16419, South Korea
| | - Hanggyo Jung
- Department of Semiconductor Convergence Engineering, Sungkyunkwan University, Suwon, 16419, South Korea
| | - Taeho Kang
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, South Korea
- Department of Nano Science and Technology, Sungkyunkwan University, Suwon, 16419, South Korea
| | - Sangmin Lee
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, South Korea
- Department of Nano Science and Technology, Sungkyunkwan University, Suwon, 16419, South Korea
| | - Jongwook Jeon
- School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon, 16419, South Korea
| | - Byung Chul Jang
- School of Electronic and Electrical Engineering, Kyungpook National University, Daegu, 41566, South Korea
| | - Sungjoo Lee
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, South Korea
- Department of Nano Science and Technology, Sungkyunkwan University, Suwon, 16419, South Korea
- Department of Nano Engineering, Sungkyunkwan University, Suwon, 16419, South Korea
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3
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Li L, Li S, Wang W, Zhang J, Sun Y, Deng Q, Zheng T, Lu J, Gao W, Yang M, Wang H, Pan Y, Liu X, Yang Y, Li J, Huo N. Adaptative machine vision with microsecond-level accurate perception beyond human retina. Nat Commun 2024; 15:6261. [PMID: 39048552 PMCID: PMC11269608 DOI: 10.1038/s41467-024-50488-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/10/2024] [Accepted: 07/12/2024] [Indexed: 07/27/2024] Open
Abstract
Visual adaptive devices have potential to simplify circuits and algorithms in machine vision systems to adapt and perceive images with varying brightness levels, which is however limited by sluggish adaptation process. Here, the avalanche tuning as feedforward inhibition in bionic two-dimensional (2D) transistor is proposed for fast and high-frequency visual adaptation behavior with microsecond-level accurate perception, the adaptation speed is over 104 times faster than that of human retina and reported bionic sensors. As light intensity changes, the bionic transistor spontaneously switches between avalanche and photoconductive effect, varying responsivity in both magnitude and sign (from 7.6 × 104 to -1 × 103 A/W), thereby achieving ultra-fast scotopic and photopic adaptation process of 108 and 268 μs, respectively. By further combining convolutional neural networks with avalanche-tuned bionic transistor, an adaptative machine vision is achieved with remarkable microsecond-level rapid adaptation capabilities and robust image recognition with over 98% precision in both dim and bright conditions.
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Affiliation(s)
- Ling Li
- School of Semiconductor Science and Technology, South China Normal University, Foshan, 528225, P.R. China
| | - Shasha Li
- School of Electronic Engineering, Chaohu University, Hefei, 238000, China
| | - Wenhai Wang
- School of Semiconductor Science and Technology, South China Normal University, Foshan, 528225, P.R. China
| | - Jielian Zhang
- School of Semiconductor Science and Technology, South China Normal University, Foshan, 528225, P.R. China
| | - Yiming Sun
- School of Semiconductor Science and Technology, South China Normal University, Foshan, 528225, P.R. China
| | - Qunrui Deng
- School of Semiconductor Science and Technology, South China Normal University, Foshan, 528225, P.R. China
| | - Tao Zheng
- School of Semiconductor Science and Technology, South China Normal University, Foshan, 528225, P.R. China
| | - Jianting Lu
- National Key Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component, China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou, 510610, China
| | - Wei Gao
- School of Semiconductor Science and Technology, South China Normal University, Foshan, 528225, P.R. China
| | - Mengmeng Yang
- School of Semiconductor Science and Technology, South China Normal University, Foshan, 528225, P.R. China
| | - Hanyu Wang
- School of Semiconductor Science and Technology, South China Normal University, Foshan, 528225, P.R. China
| | - Yuan Pan
- School of Semiconductor Science and Technology, South China Normal University, Foshan, 528225, P.R. China
| | - Xueting Liu
- School of Semiconductor Science and Technology, South China Normal University, Foshan, 528225, P.R. China
| | - Yani Yang
- School of Semiconductor Science and Technology, South China Normal University, Foshan, 528225, P.R. China
| | - Jingbo Li
- College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, China
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou, 510631, P.R. China
| | - Nengjie Huo
- School of Semiconductor Science and Technology, South China Normal University, Foshan, 528225, P.R. China.
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou, 510631, P.R. China.
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4
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Wang H, Xia H, Liu Y, Chen Y, Xie R, Wang Z, Wang P, Miao J, Wang F, Li T, Fu L, Martyniuk P, Xu J, Hu W, Lu W. Room-temperature low-threshold avalanche effect in stepwise van-der-Waals homojunction photodiodes. Nat Commun 2024; 15:3639. [PMID: 38684745 PMCID: PMC11059283 DOI: 10.1038/s41467-024-47958-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/26/2023] [Accepted: 04/16/2024] [Indexed: 05/02/2024] Open
Abstract
Avalanche or carrier-multiplication effect, based on impact ionization processes in semiconductors, has a great potential for enhancing the performance of photodetector and solar cells. However, in practical applications, it suffers from high threshold energy, reducing the advantages of carrier multiplication. Here, we report on a low-threshold avalanche effect in a stepwise WSe2 structure, in which the combination of weak electron-phonon scattering and high electric fields leads to a low-loss carrier acceleration and multiplication. Owing to this effect, the room-temperature threshold energy approaches the fundamental limit, Ethre ≈ Eg, where Eg is the bandgap of the semiconductor. Our findings offer an alternative perspective on the design and fabrication of future avalanche and hot-carrier photovoltaic devices.
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Affiliation(s)
- Hailu Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Hui Xia
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China.
- University of Chinese Academy of Sciences, Beijing, 100049, China.
| | - Yaqian Liu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Yue Chen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Runzhang Xie
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhen Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Peng Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jinshui Miao
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Fang Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Tianxin Li
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Lan Fu
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT, 2601, Australia
| | - Piotr Martyniuk
- Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908, Warsaw, Poland
| | - Jianbin Xu
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China.
- University of Chinese Academy of Sciences, Beijing, 100049, China.
| | - Wei Lu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China.
- University of Chinese Academy of Sciences, Beijing, 100049, China.
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China.
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5
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Yan Z, Xu N, Deng S. Realization of High Current Gain for Van der Waals MoS 2/WSe 2/MoS 2 Bipolar Junction Transistor. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:718. [PMID: 38668212 PMCID: PMC11053443 DOI: 10.3390/nano14080718] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/12/2024] [Revised: 04/10/2024] [Accepted: 04/17/2024] [Indexed: 04/29/2024]
Abstract
Two-dimensional (2D) materials have attracted great attention in the past few years and offer new opportunities for the development of high-performance and multifunctional bipolar junction transistors (BJTs). Here, a van der Waals BJT based on vertically stacked n+-MoS2/WSe2/MoS2 was demonstrated. The electrical performance of the device was investigated under common-base and common-emitter configurations, which show relatively large current gains of α ≈ 0.98 and β ≈ 225. In addition, the breakdown characteristics of the vertically stacked n+-MoS2/WSe2/MoS2 BJT were investigated. An open-emitter base-collector breakdown voltage (BVCBO) of 52.9 V and an open-base collector-emitter breakdown voltage (BVCEO) of 40.3 V were observed under a room-temperature condition. With the increase in the operating temperature, both BVCBO and BVCEO increased. This study demonstrates a promising way to obtain 2D-material-based BJT with high current gains and provides a deep insight into the breakdown characteristics of the device, which may promote the applications of van der Waals BJTs in the fields of integrated circuits.
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Affiliation(s)
| | | | - Shaozhi Deng
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China; (Z.Y.); (N.X.)
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6
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Song J, Lee S, Seok Y, Ko Y, Jang H, Watanabe K, Taniguchi T, Lee K. Drain-Induced Multifunctional Ambipolar Electronics Based on Junctionless MoS 2. ACS NANO 2024; 18:4320-4328. [PMID: 38277645 DOI: 10.1021/acsnano.3c09876] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/28/2024]
Abstract
Applying a drain bias to a strongly gate-coupled semiconductor influences the carrier density of the channel. However, practical applications of this drain-bias-induced effect in the advancement of switching electronics have remained elusive due to the limited capabilities of its current modulation known to date. Here, we show strategies to largely control the current by utilizing drain-bias-induced carrier type switching in an ambipolar molybdenum disulfide (MoS2) field-effect transistor with Pt bottom contacts. Our CMOS-compatible device architecture, incorporating a partially gate-coupled p-n junction, achieves multifunctionality. The ambipolar MoS2 device operates as an ambipolar transistor (on/off ratios exceeding 107 for both NMOS and PMOS), a rectifier (rectification ratio of ∼3 × 106), a reversible negative breakdown diode with an adjustable breakdown voltage (on/off ratio exceeding 109 with a maximum current as high as 10-4 A), and a photodetector. Finally, we demonstrate a complementary inverter (gain of ∼24 at Vdd = 1.5 V), which is highly facile to fabricate without the need for complex heterostructures and doping processes. Our study provides strategies to achieve high-performance ambipolar MoS2 devices and to effectively utilize drain bias for electrical switching.
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Affiliation(s)
- Jungi Song
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
| | - Suyeon Lee
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
| | - Yongwook Seok
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
| | - Yeonghyeon Ko
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
| | - Hanbyeol Jang
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Kayoung Lee
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
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7
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Cao A, Li S, Chen H, Deng M, Xu X, Shang L, Li Y, Cui A, Hu Z. A polar-switchable and controllable negative phototransistor for information encryption. MATERIALS HORIZONS 2023; 10:5099-5109. [PMID: 37691576 DOI: 10.1039/d3mh01120h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/12/2023]
Abstract
Anomalous negative phototransistors have emerged as a distinct research area, characterized by a decrease in channel current under light illumination. Recently, their potential applications have been expanded beyond photodetection. Despite the considerable attention given to negative phototransistors, negative photoconductance (NPC) in particular remains relatively unexplored, with limited research advancements as compared to well-established positive phototransistors. In this study, we designed ferroelectric field-effect transistors (FeFETs) based on the WSe2/CIPS van der Waals (vdW) vertical heterostructures with a buried-gated architecture. The transistor exhibits NPC and positive photoconductance (PPC), demonstrating the significant role of ferroelectric polarization in the distinctive photoresponse. The observed inverse photoconductance can be attributed to the dynamic switching of ferroelectric polarization and interfacial charge transfer processes, which have been investigated experimentally and theoretically using Density Functional Theory (DFT). The unique phenomena enable the coexistence of controllable and polarity-switchable PPC and NPC. The novel feature holds tremendous potential for applications in optical encryption, where the specific gate voltages and light can serve as universal keys to achieve modulation of conductivity. The ability to manipulate conductivity in response to optical stimuli opens up new avenues for developing secure communication systems and data storage technologies. Harnessing this feature enables the design of advanced encryption schemes that rely on the unique properties of our material system. The study not only advances the development of NPC but also paves the way for more robust and efficient methods of optical encryption, ensuring the confidentiality and integrity of critical information in various domains, including data transmission, and information security.
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Affiliation(s)
- Aiping Cao
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Shubing Li
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Hongli Chen
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Menghan Deng
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Xionghu Xu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Liyan Shang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Yawei Li
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Anyang Cui
- Key Laboratory of Optoelectronic Material and Device, Department of Physics, Shanghai Normal University, Shanghai 200234, China
| | - Zhigao Hu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
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8
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Guo Q, Zou Z, Xie Y, Lan X, Zhu G, Xu K, Jin R, Xu W, Huang G, Li Y, Wang T, Du W. In Situ Active Switching of Bipolar Current Rectification in 2D Semiconductor Vertical Diodes. ACS APPLIED MATERIALS & INTERFACES 2023; 15:1583-1591. [PMID: 36537368 DOI: 10.1021/acsami.2c18370] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Two-dimensional semiconducting transition-metal dichalcogenides (TMDCs) have attracted extensive attention as building blocks of miniaturized electronic and optical devices. However, as the characteristics of TMDC devices are predominately determined by their device structures, the function of TMDC devices is fixed once fabricated, leaving the reconfigurable active device and circuit a challenge. Here, we have demonstrated the current rectification switching in TMDC vertical diodes using a liquid metal (EGaIn) top electrode with a reconfigurable contact area. The rectification switching is closely related to the ultrathin gallium oxide layer on the surface of EGaIn. Under the small contact, with the existence of gallium oxide, photocurrent dominates the electrical transport showing a negative rectification, while as the contact increases, the broken gallium oxide leads to rectification switching to the positive bias direction. Such rectification switching applies to thin TMDC flakes down to 3 nm, benefitting from the soft electrical contact between the TMDC and the EGaIn electrode. Our work shows the new possibility of actively reconfigurable TMDC vertical diodes enabled by the liquid metal electrode and will promote promising applications of flexible and tunable TMDC-based nanoelectronic devices.
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Affiliation(s)
- Qianqian Guo
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, Jiangsu, P. R. China
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, Jiangsu, P. R. China
| | - Zhen Zou
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, Jiangsu, P. R. China
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, Jiangsu, P. R. China
| | - Yu Xie
- Key Laboratory of Organic Optoelectronics and Molecular Engineering and Laboratory of Flexible Electronics Technology, Department of Chemistry, Tsinghua University, Beijing 100084, P. R. China
| | - Xinhui Lan
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, Jiangsu, P. R. China
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, Jiangsu, P. R. China
| | - Guangpeng Zhu
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, Jiangsu, P. R. China
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, Jiangsu, P. R. China
| | - Kai Xu
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, Jiangsu, P. R. China
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, Jiangsu, P. R. China
| | - Ran Jin
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, Jiangsu, P. R. China
| | - Wenrui Xu
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, Jiangsu, P. R. China
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, Jiangsu, P. R. China
| | - Guangyan Huang
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, Jiangsu, P. R. China
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, Jiangsu, P. R. China
| | - Yuan Li
- Key Laboratory of Organic Optoelectronics and Molecular Engineering and Laboratory of Flexible Electronics Technology, Department of Chemistry, Tsinghua University, Beijing 100084, P. R. China
| | - Tao Wang
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, Jiangsu, P. R. China
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, Jiangsu, P. R. China
| | - Wei Du
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, Jiangsu, P. R. China
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, Jiangsu, P. R. China
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9
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Son B, Wang Y, Luo M, Lu K, Kim Y, Joo HJ, Yi Y, Wang C, Wang QJ, Chae SH, Nam D. Efficient Avalanche Photodiodes with a WSe 2/MoS 2 Heterostructure via Two-Photon Absorption. NANO LETTERS 2022; 22:9516-9522. [PMID: 36414380 DOI: 10.1021/acs.nanolett.2c03629] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Two-dimensional (2D) materials-based photodetectors in the infrared range hold the key to enabling a wide range of optoelectronics applications including infrared imaging and optical communications. While there exist 2D materials with a narrow bandgap sensitive to infrared photons, a two-photon absorption (TPA) process can also enable infrared photodetection in well-established 2D materials with large bandgaps such as WSe2 and MoS2. However, most of the TPA photodetectors suffer from low responsivity, preventing this method from being widely adopted for infrared photodetection. Herein, we experimentally demonstrate 2D materials-based TPA avalanche photodiodes achieving an ultrahigh responsivity. The WSe2/MoS2 heterostructure absorbs infrared photons with an energy smaller than the material bandgaps via a low-efficiency TPA process. The significant avalanche effect with a gain of ∼1300 improves the responsivity, resulting in the record-high responsivity of 88 μA/W. We believe that this work paves the way toward building practical and high-efficiency 2D materials-based infrared photodetectors.
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Affiliation(s)
- Bongkwon Son
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore639798, Singapore
| | - Yadong Wang
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore639798, Singapore
| | - Manlin Luo
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore639798, Singapore
| | - Kunze Lu
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore639798, Singapore
| | - Youngmin Kim
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore639798, Singapore
| | - Hyo-Jun Joo
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore639798, Singapore
| | - Yu Yi
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore639798, Singapore
| | - Chongwu Wang
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore639798, Singapore
| | - Qi Jie Wang
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore639798, Singapore
| | - Sang Hoon Chae
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore639798, Singapore
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore639798, Singapore
| | - Donguk Nam
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore639798, Singapore
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