Layer-Dependent Interlayer Antiferromagnetic Spin Reorientation in Air-Stable Semiconductor CrSBr

Controlling Coulomb correlations and fine structure of quasi-one-dimensional excitons by magnetic order

Many surprising properties of quantum materials result from Coulomb correlations defining electronic quasiparticles and their interaction chains. In van der Waals layered crystals, enhanced correlations have been tailored in reduced dimensions, enabling excitons with giant binding energies and emergent phases including ferroelectric, ferromagnetic and multiferroic orders. Yet, correlation design has primarily relied on structural engineering. Here we present quantitative experiment-theory proof that excitonic correlations can be switched through magnetic order. By probing internal Rydberg-like transitions of excitons in the magnetic semiconductor CrSBr, we reveal their binding energy and a dramatic anisotropy of their quasi-one-dimensional orbitals manifesting in strong fine-structure splitting. We switch the internal structure from strongly bound, monolayer-localized states to weakly bound, interlayer-delocalized states by pushing the system from antiferromagnetic to paramagnetic phases. Our analysis connects this transition to the exciton's spin-controlled effective quantum confinement, supported by the exciton's dynamics. In future applications, excitons or even condensates may be interfaced with spintronics; extrinsically switchable Coulomb correlations could shape phase transitions on demand.

Intrinsic Localized Excitons in MoSe2/CrSBr Heterostructure

Despite extensive studies on magnetic proximity effects, the fundamental excitonic properties of the 2D semiconductor-magnet heterostructures remain elusive. Here, the presence of localized excitons in MoSe2/CrSBr heterostructures is unveiled, represented by a new photoluminescence emission feature, X*. Our findings reveal that X* originates from excitons confined by intrinsic defects in the CrSBr layer. Additionally, the degrees of valley polarization of the X* and trion peaks exhibit opposite polarities under a magnetic field and closely correlate with the magnetic order of CrSBr. This is attributed to spin-dependent charge transfer across the heterointerface, supported by density functional theory calculations which reveal a type-II band alignment. Furthermore, the strong in-plane anisotropy of CrSBr induces unique polarization-dependent responses in MoSe2 emissions. This study highlights the crucial role of defects in shaping excitonic properties and offers valuable insights into spectrally resolved proximity effects in semiconductor-magnet van der Waals heterostructures.

Programmable Magnetic Hysteresis in Orthogonally-Twisted 2D CrSBr Magnets via Stacking Engineering

Twisting 2D van der Waals magnets allows the formation and control of different spin-textures, as skyrmions or magnetic domains. Beyond the rotation angle, different spin reversal processes can be engineered by increasing the number of magnetic layers forming the twisted van der Waals heterostructure. Here, pristine monolayers and bilayers of the A-type antiferromagnet CrSBr are considered as building blocks. By rotating 90 degrees these units, symmetric (monolayer/monolayer and bilayer/bilayer) and asymmetric (monolayer/bilayer) heterostructures are fabricated. The magneto-transport properties reveal the appearance of magnetic hysteresis, which is highly dependent upon the magnitude and direction of the applied magnetic field and is determined not only by the twist-angle but also by the number of layers forming the stack. This high tunability allows switching between volatile and non-volatile magnetic memory at zero-field and controlling the appearance of abrupt magnetic reversal processes at either negative or positive field values on demand. The phenomenology is rationalized based on the different spin-switching processes occurring in the layers, as supported by micromagnetic simulations. The results highlight the combination between twist-angle and number of layers as key elements for engineering spin-switching reversals in twisted magnets, of interest toward the miniaturization of spintronic devices and realizing novel spin textures.

Lattice thermal conductivity in CrSBr: the effects of interlayer interaction, magnetic ordering and external strain

With the continuous development of digital information and big data technologies, the ambient temperature and heat generation during the operation of magnetic storage devices play an increasingly crucial role in ensuring data security and device stability. In this study, we conducted a thorough investigation on in-plane lattice thermal conductivity of the van der Waals (vdWs) magnetic semiconductor CrSBr from bulk to monolayer using first-principles calculations and phonon Boltzmann transport equation. Our findings indicated that CrSBr show strong anisotropic thermal transport behaviors and layer number and magnetic ordering dependent lattice thermal conductivity. The lowest thermal conductivity is observed in y direction of antiferromagnetic CrSBr bilayer at all temperatures. Through the analysis of phonon spectra, phonon lifetime, heat capacity, scattering probability, phonon-phonon interaction strength, we demonstrated that out of plane acoustic phonon modes soften, the shift of Cr-Br antisymmetrical stretching vibrations, and large phonon band gap are the main factors. These results offer a comprehensive insight into phonon transport phenomena in vdWs magnetic materials.

Spin Canting Promoted Manipulation of Exchange Bias in a Perpendicular Coupled Fe3GaTe2/CrSBr Magnetic van der Waals Heterostructure

Recently, two-dimensional (2D) van der Waals (vdW) magnetic materials have emerged as a promising platform for studying exchange bias (EB) phenomena due to their atomically flat surfaces and highly versatile stacking configurations. Although complex spin configurations between 2D vdW interfaces introduce challenges in understanding their underlying mechanisms, they can offer more possibilities in realizing effective manipulations. In this study, we present a spin-orthogonal arranged 2D Fe3GaTe2 (FGaT)/CrSBr vdW heterostructure, realizing the EB effect with the bias field as large as 1730 Oe at 2 K. Interestingly, this structure induces a positive EB under low cooling field, in contrast to conventional phenomena. Moreover, by employing asymmetric field sweeping methods, we effectively manipulate the zero-field cooling EB of the device with a switchable sign and a tunable magnitude. Thus, these findings not only elucidate a distinct mechanism analysis for EB phenomena with perpendicular coupled spin configurations but also hold promise for promoting contemporary 2D spintronic device applications.

Proximity-Induced Exchange Interaction and Prolonged Valley Lifetime in MoSe2/CrSBr Van-Der-Waals Heterostructure with Orthogonal Spin Textures

Heterostructures, composed of semiconducting transition-metal dichalcogenides (TMDC) and magnetic van-der-Waals materials, offer exciting prospects for the manipulation of the TMDC valley properties via proximity interaction with the magnetic material. We show that the atomic proximity of monolayer MoSe2 and the antiferromagnetic van-der-Waals crystal CrSBr leads to an unexpected breaking of time-reversal symmetry, with originally perpendicular spin directions in both materials. The observed effect can be traced back to a proximity-induced exchange interaction via first-principles calculations. The resulting spin splitting in MoSe2 is determined experimentally and theoretically to be on the order of a few meV. Moreover, we find a more than 2 orders of magnitude longer valley lifetime of spin-polarized charge carriers in the heterostructure, as compared to monolayer MoSe2/SiO2, driven by a Mott transition in the type-III band-aligned heterostructure.

Spin-Mechanical Coupling in 2D Antiferromagnet CrSBr

Spin-mechanical coupling is vital in diverse fields including spintronics, sensing, and quantum transduction. Two-dimensional (2D) magnetic materials provide a unique platform for investigating spin-mechanical coupling, attributed to their mechanical flexibility and novel spin orderings. However, studying their spin-mechanical coupling presents challenges in probing mechanical deformation and thermodynamic property changes at the nanoscale. Here we use nano-optoelectromechanical interferometry to mechanically detect the phase transition and magnetostriction effect in multilayer CrSBr, an air-stable antiferromagnet with large magnon-exciton coupling. The transitions among antiferromagnetism, spin-canted ferromagnetism, and paramagnetism are visualized. Nontrivial magnetostriction coefficient 2.3 × 10-5 and magnetoelastic coupling strength on the order of 106 J/m3 have been found. Moreover, we demonstrate the substantial tunability of the magnetoelastic constant by nearly 50% via gate-induced strain. Our findings demonstrate the strong spin-mechanical coupling in CrSBr and pave the way for developing sensitive magnetic sensing and efficient quantum transduction at the atomically thin limit.

Extraordinary phase transition revealed in a van der Waals antiferromagnet

While the surface-bulk correspondence has been ubiquitously shown in topological phases, the relationship between surface and bulk in Landau-like phases is much less explored. Theoretical investigations since 1970s for semi-infinite systems have predicted the possibility of the surface order emerging at a higher temperature than the bulk, clearly illustrating a counterintuitive situation and greatly enriching phase transitions. But experimental realizations of this prediction remain missing. Here, we demonstrate the higher-temperature surface and lower-temperature bulk phase transitions in CrSBr, a van der Waals (vdW) layered antiferromagnet. We leverage the surface sensitivity of electric dipole second harmonic generation (SHG) to resolve surface magnetism, the bulk nature of electric quadrupole SHG to probe bulk spin correlations, and their interference to capture the two magnetic domain states. Our density functional theory calculations show the suppression of ferromagnetic-antiferromagnetic competition at the surface is responsible for this enhanced surface magnetism. Our results not only show counterintuitive, richer phase transitions in vdW magnets, but also provide viable ways to enhance magnetism in their 2D form.

Imaging nanomagnetism and magnetic phase transitions in atomically thin CrSBr

Since their first observation in 2017, atomically thin van der Waals (vdW) magnets have attracted significant fundamental, and application-driven attention. However, their low ordering temperatures, Tc, sensitivity to atmospheric conditions and difficulties in preparing clean large-area samples still present major limitations to further progress, especially amongst van der Waals magnetic semiconductors. The remarkably stable, high-Tc vdW magnet CrSBr has the potential to overcome these key shortcomings, but its nanoscale properties and rich magnetic phase diagram remain poorly understood. Here we use single spin magnetometry to quantitatively characterise saturation magnetization, magnetic anisotropy constants, and magnetic phase transitions in few-layer CrSBr by direct magnetic imaging. We show pristine magnetic phases, devoid of defects on micron length-scales, and demonstrate remarkable air-stability down the monolayer limit. We furthermore address the spin-flip transition in bilayer CrSBr by imaging the phase-coexistence of regions of antiferromagnetically (AFM) ordered and fully aligned spins. Our work will enable the engineering of exotic electronic and magnetic phases in CrSBr and the realization of novel nanomagnetic devices based on this highly promising vdW magnet.

Layer Dependence of Complex Refractive Index in CrSBr

CrSBr is a recently discovered two-dimensional anti-ferromagnet. It has attracted much attention due to its superior properties for potential optoelectronic and spintronic applications. However, its complex refractive index with layer dependence has not been systematically studied yet. In this work, we studied the room-temperature complex refractive indices of thin CrSBr flakes of different thicknesses in the visible light range. Using micro-reflectance spectroscopy, we measured the optical contrast of thin CrSBr flakes with respect to different substrates. The complex refractive index was extracted by modeling the optical contrast with the Fresnel equations. We extracted the band gap values of CrSBr in the few-layer limit. We determined the band gaps for monolayer, bilayer, and trilayer CrSBr to be 1.88 eV, 1.81 eV, and 1.77 eV, respectively. As a comparison, the band gap for multilayer CrSBr is outside our measured range, that is, below 1.55 eV. Our results suggest that the band gap of CrSBr decreases as thickness increases.

Impact of Spin-Entropy on the Thermoelectric Properties of a 2D Magnet

Heat-to-charge conversion efficiency of thermoelectric materials is closely linked to the entropy per charge carrier. Thus, magnetic materials are promising building blocks for highly efficient energy harvesters as their carrier entropy is boosted by a spin degree of freedom. In this work, we investigate how this spin-entropy impacts heat-to-charge conversion in the A-type antiferromagnet CrSBr. We perform simultaneous measurements of electrical conductance and thermocurrent while changing magnetic order using the temperature and magnetic field as tuning parameters. We find a strong enhancement of the thermoelectric power factor at around the Néel temperature. We further reveal that the power factor at low temperatures can be increased by up to 600% upon applying a magnetic field. Our results demonstrate that the thermoelectric properties of 2D magnets can be optimized by exploiting the sizable impact of spin-entropy and confirm thermoelectric measurements as a sensitive tool to investigate subtle magnetic phase transitions in low-dimensional magnets.

Doping-control of excitons and magnetism in few-layer CrSBr

Magnetism in two-dimensional materials reveals phenomena distinct from bulk magnetic crystals, with sensitivity to charge doping and electric fields in monolayer and bilayer van der Waals magnet CrI3. Within the class of layered magnets, semiconducting CrSBr stands out by featuring stability under ambient conditions, correlating excitons with magnetic order and thus providing strong magnon-exciton coupling, and exhibiting peculiar magneto-optics of exciton-polaritons. Here, we demonstrate that both exciton and magnetic transitions in bilayer and trilayer CrSBr are sensitive to voltage-controlled field-effect charging, exhibiting bound exciton-charge complexes and doping-induced metamagnetic transitions. Moreover, we demonstrate how these unique properties enable optical probes of local magnetic order, visualizing magnetic domains of competing phases across metamagnetic transitions induced by magnetic field or electrostatic doping. Our work identifies few-layer CrSBr as a rich platform for exploring collaborative effects of charge, optical excitations, and magnetism.

Tunable Magnetism in Atomically Thin Itinerant Antiferromagnet with Room-Temperature Ferromagnetic Order

Addressing the need for modulated spin configurations is crucial, as they serve as the foundational building blocks for next-generation spintronics, particularly in atomically thin structures and at room temperature. In this work, we realize intrinsic ferromagnetism in monolayer flakes and tunable ferro-/antiferromagnetism in (Fe0.56Co0.44)5GeTe2 antiferromagnets. Remarkably, the ferromagnetic ordering (≥1 L) and antiferromagnetic ordering (≥4 L) remain discernible up to room temperature. The TC (∼310 K) of the monolayer flakes sets a record high for known exfoliated monolayer van der Waals magnets. Within the framework of A-type antiferromagnetism, a notable odd-even layer-number effect at elevated temperatures (T = 150 K) is observed. Of particular interest is the strong ferromagnetic order in even-layer flakes at low temperatures. The intricate interplay among magnetic field strength, layer number, and temperature gives rise to a diverse array of phenomena, holding promise not only for new physics but also for practical applications.

Enhanced ferromagnetism, perpendicular magnetic anisotropy and high Curie temperature in the van der Waals semiconductor CrSeBr through strain and doping

Two-dimensional (2D) intrinsic van der Waals ferromagnetic semiconductor (FMS) crystals with strong perpendicular magnetic anisotropy and high Curie temperature (TC) are highly desirable and hold great promise for applications in ultrahigh-speed spintronic devices. Here, we systematically investigated the effects of a biaxial strain ranging between -8% and +8% and doping with different charge carrier concentrations (≤0.7 electrons/holes per unit cell) on the electronic structure, magnetic properties, and TC of monolayer CrSeBr by combining first-principles calculations and Monte Carlo (MC) simulations. Our results demonstrate that the pristine CrSeBr monolayer possesses an intrinsic FMS character with a band gap as large as 1.03 eV, an in-plane magnetic anisotropy of 0.131 meV per unit cell, and a TC as high as 164 K. At a biaxial strain of only 0.8% and a hole density of 5.31 × 1013 cm-2, the easy magnetization axis direction transitions from in-plane to out-of-plane. More interestingly, the magnetic anisotropy energy and TC of monolayer CrSeBr are further enhanced to 1.882 meV per unit cell and 279 K, respectively, under application of a tensile biaxial strain of 8%, and the monolayer retains its semiconducting properties throughout the entire range of investigated strains. It was also found that upon doping monolayer CrSeBr with holes with a concentration of 0.7 holes per unit cell, the perpendicular magnetic anisotropy and TC are increased to 0.756 meV per cell and 235 K, respectively, and the system tends to become metallic. These findings will help to advance the application of 2D intrinsic ferromagnetic materials in spintronic devices.

CrSBr: An Air-Stable, Two-Dimensional Magnetic Semiconductor

The discovery of magnetic order at the 2D limit has sparked new exploration of van der Waals magnets for potential use in spintronics, magnonics, and quantum information applications. However, many of these materials feature low magnetic ordering temperatures and poor air stability, limiting their fabrication into practical devices. In this Mini-Review, we present a promising material for fundamental studies and functional use: CrSBr, an air-stable, two-dimensional magnetic semiconductor. Our discussion highlights experimental research on bulk CrSBr, including quasi-1D semiconducting properties, A-type antiferromagnetic order (TN = 132 K), and strong coupling between its electronic and magnetic properties. We then discuss the behavior of monolayer and few-layer flakes and present a perspective on promising avenues for further studies on CrSBr.

Nonvolatile Electric Control of Antiferromagnet CrSBr

van der Waals magnets are emerging as a promising material platform for electric field control of magnetism, offering a pathway toward the elimination of external magnetic fields from spintronic devices. A further step is the integration of such magnets with electrical gating components that would enable nonvolatile control of magnetic states. However, this approach remains unexplored for antiferromagnets, despite their growing significance in spintronics. Here, we demonstrate nonvolatile electric field control of magnetoelectric characteristics in van der Waals antiferromagnet CrSBr. We integrate a CrSBr channel in a flash-memory architecture featuring charge trapping graphene multilayers. The electrical gate operation triggers a nonvolatile 200% change in the antiferromagnetic state of CrSBr resistance by manipulating electron accumulation/depletion. Moreover, the nonvolatile gate modulates the metamagnetic transition field of CrSBr and the magnitude of magnetoresistance. Our findings highlight the potential of manipulating magnetic properties of antiferromagnetic semiconductors in a nonvolatile way.

Hole-Doping-Induced Perpendicular Magnetic Anisotropy and High Curie Temperature in a CrSX (X = Cl, Br, I) Semiconductor Monolayer

A large perpendicular magnetic anisotropy and a high Curie temperature (TC) are crucial for the application of two-dimensional (2D) intrinsic ferromagnets to spintronic devices. Here, we investigated the electronic and magnetic properties of carrier-doped Van der Waals layered CrSX (X = Cl, Br, I) ferromagnets using first-principles calculations. It was found that hole doping can increase the magnitude of the magnetic anisotropy energy (MAE) and change the orientation of the easy magnetization axis at small doping amounts of 2.37 × 1013, 3.98 × 1012, and 3.33 × 1012/cm2 for CrSCl, CrSBr, and CrSI monolayers, respectively. The maximum values of the MAE reach 57, 133, and 1597 μeV/u.c. for the critical hole-doped CrSCl, CrSBr, and CrSI with spin orientation along the (001) direction, respectively. Furthermore, the Fermi energy level of lightly hole-doped CrSX (X = Cl, Br, I) moves into the spin-up valence band, leading to the CrSX (X = Cl, Br, I) magnetic semiconductor monolayer becoming first a half-metal and then a metal. In addition, the TC can also be increased up to 305, 317, and 345 K for CrSCl, CrSBr, and CrSI monolayers at doping amounts of 5.94 × 1014, 5.78 × 1014, and 5.55 × 1014/cm2, respectively. These properties suggest that the hole-doping process can render 2D CrSX (X = Cl, Br, I) monolayers remarkable materials for application to electrically controlled spintronic devices.

Charge Transfer and Asymmetric Coupling of MoSe2 Valleys to the Magnetic Order of CrSBr

van der Waals heterostructures composed of two-dimensional (2D) transition metal dichalcogenides and vdW magnetic materials offer an intriguing platform to functionalize valley and excitonic properties in nonmagnetic TMDs. Here, we report magneto photoluminescence (PL) investigations of monolayer (ML) MoSe2 on the layered A-type antiferromagnetic (AFM) semiconductor CrSBr under different magnetic field orientations. Our results reveal a clear influence of the CrSBr magnetic order on the optical properties of MoSe2, such as an anomalous linear-polarization dependence, changes of the exciton/trion energies, a magnetic-field dependence of the PL intensities, and a valley g-factor with signatures of an asymmetric magnetic proximity interaction. Furthermore, first-principles calculations suggest that MoSe2/CrSBr forms a broken-gap (type-III) band alignment, facilitating charge transfer processes. The work establishes that antiferromagnetic-nonmagnetic interfaces can be used to control the valley and excitonic properties of TMDs, relevant for the development of opto-spintronics devices.

Magnetic Imaging and Domain Nucleation in CrSBr Down to the 2D Limit

Recent advancements in 2D materials have revealed the potential of van der Waals magnets, and specifically of their magnetic anisotropy that allows applications down to the 2D limit. Among these materials, CrSBr has emerged as a promising candidate, because its intriguing magnetic and electronic properties have appeal for both fundamental and applied research in spintronics or magnonics. In this work, nano-SQUID-on-tip (SOT) microscopy is used to obtain direct magnetic imaging of CrSBr flakes with thicknesses ranging from monolayer (N = 1) to few-layer (N = 5). The ferromagnetic order is preserved down to the monolayer, while the antiferromagnetic coupling of the layers starts from the bilayer case. For odd layers, at zero applied magnetic field, the stray field resulting from the uncompensated layer is directly imaged. The progressive spin reorientation along the out-of-plane direction (hard axis) is also measured with a finite applied magnetic field, allowing evaluation of the anisotropy constant, which remains stable down to the monolayer and is close to the bulk value. Finally, by selecting the applied magnetic field protocol, the formation of Néel magnetic domain walls is observed down to the single-layer limit.

Lightning the Spin: Harnessing the Potential of 2D Magnets in Opto-Spintronics

Since the emergence of 2D magnets in 2017, the diversity of these materials has greatly expanded. Their 2D nature (atomic-scale thickness) endows these magnets with strong magnetic anisotropy, layer-dependent and switchable magnetic order, and quantum-confined quasiparticles, which distinguish them from conventional 3D magnetic materials. Moreover, the 2D geometry facilitates light incidence for opto-spintronic applications and potential on-chip integration. In analogy to optoelectronics based on optical-electronic interactions, opto-spintronics use light-spin interactions to process spin information stored in the solid state. In this review, opto-spintronics is divided into three types with respect to the wavelengths of radiation interacting with 2D magnets: 1) GHz (microwave) to THz (mid-infrared), 2) visible, and 3) UV to X-rays. It is focused on the recent research advancements on the newly discovered mechanisms of light-spin interactions in 2D magnets and introduces the potential design of novel opto-spintronic applications based on these interactions.

Exchange Bias Between van der Waals Materials: Tilted Magnetic States and Field-Free Spin-Orbit-Torque Switching

Magnetic van der Waals heterostructures provide a unique platform to study magnetism and spintronics device concepts in the 2D limit. Here, studies of exchange bias from the van der Waals antiferromagnet CrSBr acting on the van der Waals ferromagnet Fe3 GeTe2 (FGT) are reported. The orientation of the exchange bias is along the in-plane easy axis of CrSBr, perpendicular to the out-of-plane anisotropy of the FGT, inducing a strongly tilted magnetic configuration in the FGT. Furthermore, the in-plane exchange bias provides sufficient symmetry breaking to allow deterministic spin-orbit torque switching of the FGT in CrSBr/FGT/Pt samples at zero applied magnetic field. A minimum thickness of the CrSBr of >10 nm is needed to provide a non-zero exchange bias at 30 K.

Ferromagnetic Interlayer Coupling in CrSBr Crystals Irradiated by Ions

Layered magnetic materials are becoming a major platform for future spin-based applications. Particularly, the air-stable van der Waals compound CrSBr is attracting considerable interest due to its prominent magneto-transport and magneto-optical properties. In this work, we observe a transition from antiferromagnetic to ferromagnetic behavior in CrSBr crystals exposed to high-energy, non-magnetic ions. Already at moderate fluences, ion irradiation induces a remanent magnetization with hysteresis adapting to the easy-axis anisotropy of the pristine magnetic order up to a critical temperature of 110 K. Structure analysis of the irradiated crystals in conjunction with density functional theory calculations suggests that the displacement of constituent atoms due to collisions with ions and the formation of interstitials favors ferromagnetic order between the layers.

Origin and regulation of triaxial magnetic anisotropy in the ferromagnetic semiconductor CrSBr monolayer

Magnetic anisotropy plays a vital role in stabilizing the long-range magnetic order of two-dimensional ferromagnetic systems. In this work, using the first-principles method, we systematically explored the triaxial magnetic anisotropic properties of a ferromagnetic semiconductor CrSBr monolayer, which is recently exfoliated from its bulk. Further analysis shows that the triaxial magnetic anisotropic properties originate from the coexistence of the magnetic dipole-dipole interaction (shape anisotropy) and the spin-orbit coupling interaction (magnetocrystalline anisotropy). Interestingly, the shape anisotropy, which has been neglected in most previous works, dominates over the magnetocrystalline anisotropy. Besides, the experimental Curie temperature of the CrSBr monolayer is well reproduced using Monte Carlo simulations. What is more, the easy magnetic axes and ferromagnetism in the CrSBr monolayer can be manipulated by strains and are relatively more susceptible to the uniaxial strain in the x direction. Our study not only explains the mechanism of triaxial magnetic anisotropy of the CrSBr monolayer, but also sheds light on how to tune the magnetic anisotropy and Curie temperature in ferromagnetic monolayers.

Interplay between Optical Emission and Magnetism in the van der Waals Magnetic Semiconductor CrSBr in the Two-Dimensional Limit

The van der Waals semiconductor metamagnet CrSBr offers an ideal platform for studying the interplay between optical and magnetic properties in the two-dimensional limit. Here, we carried out an exhaustive optical characterization of this material by means of temperature- and magnetic-field-dependent photoluminescence (PL) on flakes of different thicknesses down to the monolayer. We found a characteristic emission peak that is quenched upon switching the ferromagnetic layers from an antiparallel to a parallel configuration and exhibits a temperature dependence different from that of the peaks commonly ascribed to excitons. The contribution of this peak to the PL is boosted around 30-40 K, coinciding with the hidden order magnetic transition temperature. Our findings reveal the connection between the optical and magnetic properties via the ionization of magnetic donor vacancies. This behavior enables a useful tool for the optical reading of the magnetic states in atomically thin layers of CrSBr and shows the potential of the design of 2D heterostructures with magnetic and excitonic properties.

Tailoring Bulk Photovoltaic Effects in Magnetic Sliding Ferroelectric Materials

The bulk photovoltaic effect that is intimately associated with crystalline symmetry has been extensively studied in various nonmagnetic materials, especially ferroelectrics with a switchable electric polarization. In order to further engineer the symmetry, one could resort to spin-polarized systems possessing an extra magnetic degree of freedom. Here, we investigate the bulk photovoltaic effect in two-dimensional magnetic sliding ferroelectric (MSFE) systems, illustrated in VSe₂, FeCl₂, and CrI₃ bilayers. The transition metal elements in these systems exhibit intrinsic spin polarization, and the stacking mismatch between the two layers produces a finite out-of-plane electric dipole. Through symmetry analyses and first-principles calculations, we show that photoinduced in-plane bulk photovoltaic current can be effectively tuned by their magnetic order and the out-of-plane dipole moment. The underlying mechanism is elucidated from the quantum metric dipole distribution in the reciprocal space. The ease of the fabrication and manipulation of MSFEs guarantee practical optoelectronic applications.

Probing the Spin Dimensionality in Single-Layer CrSBr Van Der Waals Heterostructures by Magneto-Transport Measurements

2D magnetic materials offer unprecedented opportunities for fundamental and applied research in spintronics and magnonics. Beyond the pioneering studies on 2D CrI₃ and Cr₂ Ge₂ Te₆ , the field has expanded to 2D antiferromagnets exhibiting different spin anisotropies and textures. Of particular interest is the layered metamagnet CrSBr, a relatively air-stable semiconductor formed by antiferromagnetically-coupled ferromagnetic layers (T_c ∼150 K) that can be exfoliated down to the single-layer. It presents a complex magnetic behavior with a dynamic magnetic crossover, exhibiting a low-temperature hidden-order below T*∼40 K. Here, the magneto-transport properties of CrSBr vertical heterostructures in the 2D limit are inspected. The results demonstrate the marked low-dimensional character of the ferromagnetic monolayer, with short-range correlations above T_c and an Ising-type in-plane anisotropy, being the spins spontaneously aligned along the easy axis b below T_c . By applying moderate magnetic fields along a and c axes, a spin-reorientation occurs, leading to a magnetoresistance enhancement below T*. In multilayers, a spin-valve behavior is observed, with negative magnetoresistance strongly enhanced along the three directions below T*. These results show that CrSBr monolayer/bilayer provides an ideal platform for studying and controlling field-induced phenomena in two-dimensions, offering new insights regarding 2D magnets and their integration into vertical spintronic devices.