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Kim H, Kim T, Chung HK, Jeon J, Kim SC, Won SO, Harada R, Tsugawa T, Kim S, Kim SK. Sustained Area-Selectivity in Atomic Layer Deposition of Ir Films: Utilization of Dual Effects of O 3 in Deposition and Etching. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2402543. [PMID: 39077961 DOI: 10.1002/smll.202402543] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/30/2024] [Revised: 06/14/2024] [Indexed: 07/31/2024]
Abstract
Area-selective deposition (ASD) based on self-aligned technology has emerged as a promising solution for resolving misalignment issues during ultrafine patterning processes. Despite its potential, the problems of area-selectivity losing beyond a certain thickness remain critical in ASD applications. This study reports a novel approach to sustain the area-selectivity of Ir films as the thickness increases. Ir films are deposited on Al2O3 as the growth area and SiO2 as the non-growth area using atomic-layer-deposition with tricarbonyl-(1,2,3-η)-1,2,3-tri(tert-butyl)-cyclopropenyl-iridium and O3. O3 exhibits a dual effect, facilitating both deposition and etching. In the steady-state growth regime, O3 solely contributes to deposition, whereas in the initial growth stages, longer exposure to O3 etches the initially formed isolated Ir nuclei through the formation of volatile IrO3. Importantly, longer O3 exposure is required for the initial etching on the growth area(Al2O3) compared to the non-growth area(SiO2). By controlling the O3 injection time, the area selectivity is sustained even above a thickness of 25 nm by suppressing nucleation on the non-growth area. These findings shed light on the fundamental mechanisms of ASD using O3 and offer a promising avenue for advancing thin-film technologies. Furthermore, this approach holds promise for extending ASD to other metals susceptible to forming volatile species.
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Affiliation(s)
- Han Kim
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 02841, South Korea
- Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 02792, South Korea
| | - Taeseok Kim
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 02841, South Korea
- Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 02792, South Korea
| | - Hong Keun Chung
- Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 02792, South Korea
- Department of Materials Science and Chemical Engineering, Hanyang University, Ansan, 15588, South Korea
| | - Jihoon Jeon
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 02841, South Korea
- Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 02792, South Korea
| | - Sung-Chul Kim
- Advanced Analysis and Data Center, Korea Institute of Science and Technology, Seoul, 02792, South Korea
| | - Sung Ok Won
- Advanced Analysis and Data Center, Korea Institute of Science and Technology, Seoul, 02792, South Korea
| | - Ryosuke Harada
- Chemical Materials Development Department, TANAKA Kikinzoku Kogyo K.K., Tsukuba, 300-4247, Japan
| | - Tomohiro Tsugawa
- Chemical Materials Development Department, TANAKA Kikinzoku Kogyo K.K., Tsukuba, 300-4247, Japan
| | - Sangtae Kim
- Department of Nuclear Engineering, Hanyang University, Seoul, 04763, South Korea
| | - Seong Keun Kim
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 02841, South Korea
- Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 02792, South Korea
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Tan XY, Dong J, Liu J, Zhang D, Solco SFD, Sağlık K, Jia N, You IJWJ, Chien SW, Wang X, Hu L, Luo Y, Zheng Y, Soo DXY, Ji R, Goh KCH, Jiang Y, Li J, Suwardi A, Zhu Q, Xu J, Yan Q. Synergistic Combination of Sb 2Si 2Te 6 Additives for Enhanced Average ZT and Single-Leg Device Efficiency of Bi 0.4Sb 1.6Te 3-based Composites. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2400870. [PMID: 38553790 PMCID: PMC11187870 DOI: 10.1002/advs.202400870] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/21/2024] [Indexed: 06/20/2024]
Abstract
Thermoelectric materials are highly promising for waste heat harvesting. Although thermoelectric materials research has expanded over the years, bismuth telluride-based alloys are still the best for near-room-temperature applications. In this work, a ≈38% enhancement of the average ZT (300-473 K) to 1.21 is achieved by mixing Bi0.4Sb1.6Te3 with an emerging thermoelectric material Sb2Si2Te6, which is significantly higher than that of most BiySb2-yTe3-based composites. This enhancement is facilitated by the unique interface region between the Bi0.4Sb1.6Te3 matrix and Sb2Si2Te6-based precipitates with an orderly atomic arrangement, which promotes the transport of charge carriers with minimal scattering, overcoming a common factor that is limiting ZT enhancement in such composites. At the same time, high-density dislocations in the same region can effectively scatter the phonons, decoupling the electron-phonon transport. This results in a ≈56% enhancement of the thermoelectric quality factor at 373 K, from 0.41 for the pristine sample to 0.64 for the composite sample. A single-leg device is fabricated with a high efficiency of 5.4% at ΔT = 164 K further demonstrating the efficacy of the Sb2Si2Te6 compositing strategy and the importance of the precipitate-matrix interface microstructure in improving the performance of materials for relatively low-temperature applications.
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Affiliation(s)
- Xian Yi Tan
- Institute of Materials Research and Engineering (IMRE)Agency for ScienceTechnology and Research (A*STAR)2 Fusionopolis Way, Innovis #08‐03Singapore138634Republic of Singapore
- School of Materials Science and EngineeringNanyang Technological University50 Nanyang Ave, Block N4.1 #01‐30Singapore639798Republic of Singapore
| | - Jinfeng Dong
- School of Materials Science and EngineeringNanyang Technological University50 Nanyang Ave, Block N4.1 #01‐30Singapore639798Republic of Singapore
| | - Jiawei Liu
- School of Materials Science and EngineeringNanyang Technological University50 Nanyang Ave, Block N4.1 #01‐30Singapore639798Republic of Singapore
- Institute of Sustainability for ChemicalsEnergy and Environment (ISCE2)Agency for ScienceTechnology and Research (A*STAR)1 Pesek Road, Jurong IslandSingapore627833Republic of Singapore
| | - Danwei Zhang
- Institute of Materials Research and Engineering (IMRE)Agency for ScienceTechnology and Research (A*STAR)2 Fusionopolis Way, Innovis #08‐03Singapore138634Republic of Singapore
| | - Samantha Faye Duran Solco
- Institute of Materials Research and Engineering (IMRE)Agency for ScienceTechnology and Research (A*STAR)2 Fusionopolis Way, Innovis #08‐03Singapore138634Republic of Singapore
| | - Kıvanç Sağlık
- Institute of Materials Research and Engineering (IMRE)Agency for ScienceTechnology and Research (A*STAR)2 Fusionopolis Way, Innovis #08‐03Singapore138634Republic of Singapore
- School of Materials Science and EngineeringNanyang Technological University50 Nanyang Ave, Block N4.1 #01‐30Singapore639798Republic of Singapore
| | - Ning Jia
- School of Materials Science and EngineeringNanyang Technological University50 Nanyang Ave, Block N4.1 #01‐30Singapore639798Republic of Singapore
- Key Laboratory of Materials for High Power LaserShanghai Institute of Optics and Fine MechanicsChinese Academy of SciencesShanghai201800P. R. China
| | - Ivan Joel Wen Jie You
- Institute of Materials Research and Engineering (IMRE)Agency for ScienceTechnology and Research (A*STAR)2 Fusionopolis Way, Innovis #08‐03Singapore138634Republic of Singapore
- NUS High School of Mathematics and Science20 Clementi Avenue 1Singapore117542Republic of Singapore
| | - Sheau Wei Chien
- Institute of Materials Research and Engineering (IMRE)Agency for ScienceTechnology and Research (A*STAR)2 Fusionopolis Way, Innovis #08‐03Singapore138634Republic of Singapore
| | - Xizu Wang
- Institute of Materials Research and Engineering (IMRE)Agency for ScienceTechnology and Research (A*STAR)2 Fusionopolis Way, Innovis #08‐03Singapore138634Republic of Singapore
| | - Lei Hu
- State Key Laboratory for Mechanical Behavior of MaterialsXi'an Jiaotong UniversityXi'an710049P. R. China
| | - Yubo Luo
- State Key Laboratory of Materials Processing and Die & Mould TechnologySchool of Materials Science and EngineeringHuazhong University of Science and TechnologyWuhan430074P. R. China
| | - Yun Zheng
- Key Laboratory of Optoelectronic Chemical Materials and DevicesMinistry of EducationJianghan UniversityWuhan430056P. R. China
| | - Debbie Xiang Yun Soo
- Institute of Materials Research and Engineering (IMRE)Agency for ScienceTechnology and Research (A*STAR)2 Fusionopolis Way, Innovis #08‐03Singapore138634Republic of Singapore
| | - Rong Ji
- Institute of Materials Research and Engineering (IMRE)Agency for ScienceTechnology and Research (A*STAR)2 Fusionopolis Way, Innovis #08‐03Singapore138634Republic of Singapore
| | - Ken Choon Hwa Goh
- Institute of Materials Research and Engineering (IMRE)Agency for ScienceTechnology and Research (A*STAR)2 Fusionopolis Way, Innovis #08‐03Singapore138634Republic of Singapore
| | - Yilin Jiang
- State Key Laboratory of New Ceramics and Fine ProcessingSchool of Materials Science and EngineeringTsinghua UniversityBeijing100084China
| | - Jing‐Feng Li
- State Key Laboratory of New Ceramics and Fine ProcessingSchool of Materials Science and EngineeringTsinghua UniversityBeijing100084China
| | - Ady Suwardi
- Institute of Materials Research and Engineering (IMRE)Agency for ScienceTechnology and Research (A*STAR)2 Fusionopolis Way, Innovis #08‐03Singapore138634Republic of Singapore
- Department of Electronic EngineeringThe Chinese University of Hong KongShatin, New TerritoriesHong Kong999077China
| | - Qiang Zhu
- Institute of Materials Research and Engineering (IMRE)Agency for ScienceTechnology and Research (A*STAR)2 Fusionopolis Way, Innovis #08‐03Singapore138634Republic of Singapore
- Institute of Sustainability for ChemicalsEnergy and Environment (ISCE2)Agency for ScienceTechnology and Research (A*STAR)1 Pesek Road, Jurong IslandSingapore627833Republic of Singapore
- School of ChemistryChemical Engineeringand BiotechnologyNanyang Technological University21 Nanyang LinkSingapore637371Republic of Singapore
| | - Jianwei Xu
- Institute of Materials Research and Engineering (IMRE)Agency for ScienceTechnology and Research (A*STAR)2 Fusionopolis Way, Innovis #08‐03Singapore138634Republic of Singapore
- Institute of Sustainability for ChemicalsEnergy and Environment (ISCE2)Agency for ScienceTechnology and Research (A*STAR)1 Pesek Road, Jurong IslandSingapore627833Republic of Singapore
- Department of ChemistryNational University of Singapore3 Science Drive 3Singapore117543Republic of Singapore
| | - Qingyu Yan
- School of Materials Science and EngineeringNanyang Technological University50 Nanyang Ave, Block N4.1 #01‐30Singapore639798Republic of Singapore
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Jin K, Yang Z, Fu L, Lou Y, Xu P, Huang M, Shi Z, Xu B. All-Inorganic Halide Perovskites Boost High-Ranged Figure-of-Merit in Bi 0.4Sb 1.6Te 3 for Thermoelectric Cooling and Low-Grade Heat Recovery. ACS NANO 2024; 18:13924-13938. [PMID: 38743703 DOI: 10.1021/acsnano.4c03926] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/16/2024]
Abstract
The all-inorganic halide perovskite CsPbX3 (X = Cl, Br, or I) offers various advantages, such as tunable electronic structure and high carrier mobility. However, its potential application in thermoelectric materials remains underexplored. In this study, we propose a simple yet effective method to synthesize a CsPbX3/Bi0.4Sb1.6Te3 (BST) nanocomposite by sintering a uniformly mixed raw powder. The intrinsic excitation of the BST system is suppressed by exploiting the rich phase structure and tunable electrical transport properties of CsPbX3, and the thermoelectric properties were synergistically optimized. Notably, for CsPbI3, its phase-transition-induced dislocation arrays together with low group velocities drastically reduce thermal conductivity. As a result, the composite achieves an ultrahigh average figure-of-merit (ZT) of 1.4 from 298 to 523 K. The two-pair TE module demonstrates a superior conversion efficiency of 7.3%. This study expands the potential applications of inorganic halide perovskites, into thermoelectrics.
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Affiliation(s)
- Kangpeng Jin
- School of Chemistry and Chemical Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Zhiya Yang
- Ranney School, 235 Hope Road, Tinton Falls, New Jersey 07724, United States
| | - Liangwei Fu
- School of Chemistry and Chemical Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Yue Lou
- School of Chemistry and Chemical Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Pengfei Xu
- School of Chemistry and Chemical Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Ming Huang
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Zhan Shi
- College of Chemistry, Jilin University, Changchun 130012, China
| | - Biao Xu
- School of Chemistry and Chemical Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
- State Key Laboratory of Coordination Chemistry, Nanjing University, Nanjing 210093, China
- State Key Laboratory of Physical Chemistry of Solid Surface, Xiamen University, Xiamen 361005, China
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Lee S, Park GM, Kim Y, Lee SH, Jung SJ, Hong J, Kim SC, Won SO, Lee AS, Chung YJ, Kim JY, Kim H, Baek SH, Kim JS, Park TJ, Kim SK. Unlocking the Potential of Porous Bi 2Te 3-Based Thermoelectrics Using Precise Interface Engineering through Atomic Layer Deposition. ACS APPLIED MATERIALS & INTERFACES 2024; 16:17683-17691. [PMID: 38531014 DOI: 10.1021/acsami.4c01946] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/28/2024]
Abstract
Porous thermoelectric materials offer exciting prospects for improving the thermoelectric performance by significantly reducing the thermal conductivity. Nevertheless, porous structures are affected by issues, including restricted enhancements in performance attributed to decreased electronic conductivity and degraded mechanical strength. This study introduces an innovative strategy for overcoming these challenges using porous Bi0.4Sb1.6Te3 (BST) by combining porous structuring and interface engineering via atomic layer deposition (ALD). Porous BST powder was produced by selectively dissolving KCl in a milled mixture of BST and KCl; the interfaces were engineered by coating ZnO films through ALD. This novel architecture remarkably reduced the thermal conductivity owing to the presence of several nanopores and ZnO/BST heterointerfaces, promoting efficient phonon scattering. Additionally, the ZnO coating mitigated the high resistivity associated with the porous structure, resulting in an improved power factor. Consequently, the ZnO-coated porous BST demonstrated a remarkable enhancement in thermoelectric efficiency, with a maximum zT of approximately 1.53 in the temperature range of 333-353 K, and a zT of 1.44 at 298 K. Furthermore, this approach plays a significant role in enhancing the mechanical strength, effectively mitigating a critical limitation of porous structures. These findings open new avenues for the development of advanced porous thermoelectric materials and highlight their potential for precise interface engineering through the ALD.
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Affiliation(s)
- Seunghyeok Lee
- Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 02792, South Korea
- Department of Materials Science and Chemical Engineering, Hanyang University, Ansan 15588, South Korea
| | - Gwang Min Park
- Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 02792, South Korea
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, South Korea
| | - Younghoon Kim
- Graduate School of Materials and Devices, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, South Korea
| | - So-Hyeon Lee
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, South Korea
| | - Sung-Jin Jung
- Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 02792, South Korea
| | - Junpyo Hong
- Materials Architecturing Research Center, Korea Institute of Science and Technology, Seoul 02792, South Korea
- Convergence Research Center for Solutions to Electromagnetic Interference in Future-Mobility, Korea Institute of Science and Technology, Seoul 02792, South Korea
| | - Sung-Chul Kim
- Advanced Analysis and Data Center, Korea Institute of Science and Technology, Seoul 02792, South Korea
| | - Sung Ok Won
- Advanced Analysis and Data Center, Korea Institute of Science and Technology, Seoul 02792, South Korea
| | - Albert S Lee
- Materials Architecturing Research Center, Korea Institute of Science and Technology, Seoul 02792, South Korea
- Convergence Research Center for Solutions to Electromagnetic Interference in Future-Mobility, Korea Institute of Science and Technology, Seoul 02792, South Korea
| | - Yoon Jang Chung
- Department of Chemical and Biological Engineering, Korea University, Seoul 02841, South Korea
| | - Ju-Young Kim
- Graduate School of Materials and Devices, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, South Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, South Korea
| | - Heesuk Kim
- Soft Hybrid Materials Research Center, Korea Institute of Science and Technology, Seoul 02792, South Korea
| | - Seung-Hyub Baek
- Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 02792, South Korea
| | - Jin-Sang Kim
- Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Wanju 55324, South Korea
| | - Tae Joo Park
- Department of Materials Science and Chemical Engineering, Hanyang University, Ansan 15588, South Korea
| | - Seong Keun Kim
- Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 02792, South Korea
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, South Korea
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5
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Choi M, An J, Lee H, Jang H, Park JH, Cho D, Song JY, Kim SM, Oh MW, Shin H, Jeon S. High figure-of-merit for ZnO nanostructures by interfacing lowly-oxidized graphene quantum dots. Nat Commun 2024; 15:1996. [PMID: 38485943 PMCID: PMC10940299 DOI: 10.1038/s41467-024-46182-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/05/2023] [Accepted: 02/15/2024] [Indexed: 03/18/2024] Open
Abstract
Thermoelectric technology has potential for converting waste heat into electricity. Although traditional thermoelectric materials exhibit extremely high thermoelectric performances, their scarcity and toxicity limit their applications. Zinc oxide (ZnO) emerges as a promising alternative owing to its high thermal stability and relatively high Seebeck coefficient, while also being earth-abundant and nontoxic. However, its high thermal conductivity (>40 W m-1K-1) remains a challenge. In this study, we use a multi-step strategy to achieve a significantly high dimensionless figure-of-merit (zT) value of approximately 0.486 at 580 K (estimated value) by interfacing graphene quantum dots with 3D nanostructured ZnO. Here, we show the fabrication of graphene quantum dots interfaced 3D ZnO, yielding the highest zT value ever reported for ZnO counterparts; specifically, our experimental results indicate that the fabricated 3D GQD@ZnO exhibited a significantly low thermal conductivity of 0.785 W m-1K-1 (estimated value) and a remarkably high Seebeck coefficient of - 556 μV K-1 at 580 K.
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Affiliation(s)
- Myungwoo Choi
- Department of Materials Science and Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Juyoung An
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon, 34141, Republic of Korea
| | - Hyejeong Lee
- Division of Chemical and Material Metrology, Korea Research Institute of Standards and Science, Daejeon, 34113, Republic of Korea
| | - Hanhwi Jang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon, 34141, Republic of Korea
| | - Ji Hong Park
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon, 34141, Republic of Korea
- Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Jeonbuk, 55324, Republic of Korea
| | - Donghwi Cho
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon, 34114, Republic of Korea
- Advanced Materials and Chemical Engineering, University of Science and Technology, Daejeon, 34113, Republic of Korea
| | - Jae Yong Song
- Department of Semiconductor Engineering, Pohang University of Science and Technology, Pohang, 37673, Republic of Korea
| | - Seung Min Kim
- Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Jeonbuk, 55324, Republic of Korea
| | - Min-Wook Oh
- Department of Materials Science and Engineering, Hanbat National University, Daejeon, 34158, Republic of Korea
| | - Hosun Shin
- Division of Chemical and Material Metrology, Korea Research Institute of Standards and Science, Daejeon, 34113, Republic of Korea.
| | - Seokwoo Jeon
- Department of Materials Science and Engineering, Korea University, Seoul, 02841, Republic of Korea.
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Park D, Kim M, Kim J. Highly porous thermoelectric composites with high figure of merit and low thermal conductivity from solution-synthesized porous Bi 2Si 2Te 6 nanosheets. Dalton Trans 2023; 52:16398-16405. [PMID: 37870571 DOI: 10.1039/d3dt02544f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/24/2023]
Abstract
Layer-structured Bi2Si2Te6 has garnered significant attention in the field of thermoelectrics due to its exceptional thermoelectric properties and unique structural characteristics. Enhancing the transport properties of composites by manipulating the thermal and electrical properties of materials through the fabrication of porous nanostructured materials has emerged as a promising strategy. This paper presents a study on enhancing the thermoelectric (TE) properties of Bi2Si2Te6 nanosheets (BST NSs) through nanostructuring and the fabrication of porous BST NSs (p-BST). The process involves Li intercalation and exfoliation to obtain BST NSs, followed by the creation of p-BST composites by introducing nanosized pores onto the surface of the NSs using high-power sonification for various durations. The incorporation of the porous structure effectively increases phonon scattering, leading to a decrease in the lattice thermal conductivity (κl) of the composite. The p-BST(2) composite demonstrates significantly low κ and enhanced thermoelectric figure of merit (ZT) values (∼0.63 W m-1 K-1 and ∼0.083) at room temperature. These results highlight the efficacy of porous structure preparation as a promising strategy for enhancing the thermoelectric performance of chalcogenide-based composites, offering potential solutions to environmental degradation and energy shortages.
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Affiliation(s)
- Dabin Park
- School of Chemical Engineering & Materials Science, Chung-Ang University, Seoul 06974, Republic of Korea
| | - Minsu Kim
- School of Chemical Engineering & Materials Science, Chung-Ang University, Seoul 06974, Republic of Korea
| | - Jooheon Kim
- School of Chemical Engineering & Materials Science, Chung-Ang University, Seoul 06974, Republic of Korea
- Department of Advance Materials Engineering, Chung-Ang University, Anseong 17546, Republic of Korea
- Department of Intelligent Energy and Industry, Graduate School, Chung-Ang University, Seoul 06974, Republic of Korea.
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Zhu M, Lu C, Liu L. Progress and challenges of emerging MXene based materials for thermoelectric applications. iScience 2023; 26:106718. [PMID: 37234091 PMCID: PMC10206441 DOI: 10.1016/j.isci.2023.106718] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/27/2023] Open
Abstract
To realize sustainable development, more and more countries forwarded carbon neutrality goal. Accordingly, improving the utilization efficiency of traditional fossil fuel is an effective strategy for this great goal. Keeping this in mind, developing thermoelectric devices to recover waste heat energy resulted in the consumption process of fuel is demonstrated to be promising. High performance thermoelectric devices require advanced materials. MXenes are a kind of 2D materials with a layered structure, which demonstrate excellent thermoelectric performance owing to their unique physical, mechanical, and chemical properties. Also, substantial achievement has been gained during the past few years in synthesizing MXene based materials for thermoelectric devices. In this review, the mainstream synthetic routes of MXene from etching MAX were summarized. Significantly, the current state and challenges of research on improving the performance of MXene based thermoelectrics are explored, including pristine MXene and MXene based composites.
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Affiliation(s)
- Maiyong Zhu
- Research School of Polymeric Materials, School of Materials Science & Engineering, Jiangsu University, Zhenjiang 212013, P. R. China
| | - Congcong Lu
- Research School of Polymeric Materials, School of Materials Science & Engineering, Jiangsu University, Zhenjiang 212013, P. R. China
| | - Lingran Liu
- Research School of Polymeric Materials, School of Materials Science & Engineering, Jiangsu University, Zhenjiang 212013, P. R. China
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8
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Lee S, Jung SJ, Park GM, Na MY, Kim KC, Hong J, Lee AS, Baek SH, Kim H, Park TJ, Kim JS, Kim SK. Selective Dissolution-Derived Nanoporous Design of Impurity-Free Bi 2 Te 3 Alloys with High Thermoelectric Performance. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2205202. [PMID: 36634999 DOI: 10.1002/smll.202205202] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/24/2022] [Revised: 12/10/2022] [Indexed: 06/17/2023]
Abstract
Thermoelectric technology, which has been receiving attention as a sustainable energy source, has limited applications because of its relatively low conversion efficiency. To broaden their application scope, thermoelectric materials require a high dimensionless figure of merit (ZT). Porous structuring of a thermoelectric material is a promising approach to enhance ZT by reducing its thermal conductivity. However, nanopores do not form in thermoelectric materials in a straightforward manner; impurities are also likely to be present in thermoelectric materials. Here, a simple but effective way to synthesize impurity-free nanoporous Bi0.4 Sb1.6 Te3 via the use of nanoporous raw powder, which is scalably formed by the selective dissolution of KCl after collision between Bi0.4 Sb1.6 Te3 and KCl powders, is proposed. This approach creates abundant nanopores, which effectively scatter phonons, thereby reducing the lattice thermal conductivity by 33% from 0.55 to 0.37 W m-1 K-1 . Benefitting from the optimized porous structure, porous Bi0.4 Sb1.6 Te3 achieves a high ZT of 1.41 in the temperature range of 333-373 K, and an excellent average ZT of 1.34 over a wide temperature range of 298-473 K. This study provides a facile and scalable method for developing high thermoelectric performance Bi2 Te3 -based alloys that can be further applied to other thermoelectric materials.
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Affiliation(s)
- Seunghyeok Lee
- Electronic Materials Research Center, Korea Institute of Science and Technology Seoul, Seoul, 02792, South Korea
- Department of Materials Science and Chemical Engineering, Hanyang University, Ansan, 15588, South Korea
| | - Sung-Jin Jung
- Electronic Materials Research Center, Korea Institute of Science and Technology Seoul, Seoul, 02792, South Korea
| | - Gwang Min Park
- Electronic Materials Research Center, Korea Institute of Science and Technology Seoul, Seoul, 02792, South Korea
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 02841, South Korea
| | - Min Young Na
- Advanced Analysis and Data Center, Korea Institute of Science and Technology, Seoul, 02792, South Korea
| | - Kwang-Chon Kim
- Electronic Materials Research Center, Korea Institute of Science and Technology Seoul, Seoul, 02792, South Korea
| | - Junpyo Hong
- Materials Architecturing Research Center, Korea Institute of Science and Technology, Seoul, 02792, South Korea
- Convergence Research Center for Solutions to Electromagnetic Interference in Future-mobility, Korea Institute of Science and Technology, Seoul, 02792, South Korea
| | - Albert S Lee
- Materials Architecturing Research Center, Korea Institute of Science and Technology, Seoul, 02792, South Korea
- Convergence Research Center for Solutions to Electromagnetic Interference in Future-mobility, Korea Institute of Science and Technology, Seoul, 02792, South Korea
| | - Seung-Hyub Baek
- Electronic Materials Research Center, Korea Institute of Science and Technology Seoul, Seoul, 02792, South Korea
- Department of Materials Science and Engineering, Yonsei University, Seoul, 03722, South Korea
- Yonsei-KIST Convergence Research Institute, Seoul, 02792, South Korea
- Nanomaterials Science & Engineering, KIST School, Korea University of Science and Technology, Seoul, 02792, South Korea
| | - Heesuk Kim
- Soft Hybrid Materials Research Center, Korea Institute of Science and Technology, Seoul, 02792, South Korea
| | - Tae Joo Park
- Department of Materials Science and Chemical Engineering, Hanyang University, Ansan, 15588, South Korea
| | - Jin-Sang Kim
- Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Wanju, 55324, South Korea
| | - Seong Keun Kim
- Electronic Materials Research Center, Korea Institute of Science and Technology Seoul, Seoul, 02792, South Korea
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 02841, South Korea
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9
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Hu Q, Luo D, Guo J, Qiu W, Wu X, Yang L, Wang Z, Cui X, Tang J. Broad Temperature Plateau for High Thermoelectric Properties of n-Type Bi 2Te 2.7Se 0.3 by 3D Printing-Driven Defect Engineering. ACS APPLIED MATERIALS & INTERFACES 2023; 15:1296-1304. [PMID: 36562725 DOI: 10.1021/acsami.2c19131] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
High-energy-conversion Bi2Te3-based thermoelectric generators (TEGs) are needed to ensure that the assembled material has a high value of average figure of merit (ZTave). However, the inferior ZTave of the n-type leg severely restricts the large-scale applications of Bi2Te3-based TEGs. In this study, we achieved and reported a high peak ZT (1.33) of three-dimensional (3D)-printing n-type Bi2Te2.7Se0.3. In addition, a superior ZTave of 1.23 at a temperature ranging from 300 to 500 K was achieved. The high value of ZTave was obtained by synergistically optimizing the electronic- and phonon-transport properties using the 3D-printing-driven defect engineering. The nonequilibrium solidification mechanism facilitated the multiscale defects formed during the 3D-printed process. Among the defects formed, the nanotwins triggered the energy-filtering effect, thus enhancing the Seebeck coefficient at a temperature range of 300-500 K. The effective scattering of wide-frequency phonons by multiscale defects reduced the lattice thermal conductivity close to the theoretical minimum of ∼0.35 W m-1 k-1. Given the advantages of 3D printing in freeform device shapes, we assembled and measured bionic honeycomb-shaped single-leg TEGs, exhibiting a record-high energy conversion efficiency (10.2%). This work demonstrates the great potential of defect engineering driven by selective laser melting 3D-printing technology for the rational design of advanced n-type Bi2Te2.7Se0.3 thermoelectric material.
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Affiliation(s)
- Qiujun Hu
- College of Physics, Sichuan University, Chengdu610064, P. R. China
| | - Ding Luo
- Faculty of Engineering, University of Nottingham, University Park, Nottingham999020, U.K
| | - Junbiao Guo
- Key Laboratory of Radiation Physics and Technology of Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu610064, P. R. China
| | - Wenbin Qiu
- Key Laboratory of Radiation Physics and Technology of Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu610064, P. R. China
| | - Xiaoyong Wu
- Nuclear Power Institute of China, Chengdu, Sichuan610041, P. R. China
| | - Lei Yang
- School of Materials Science & Engineering, Sichuan University, Chengdu610064, China
| | - Zhengshang Wang
- Sichuan Research Center of New Materials, Institute of Chemical Materials, China Academy of Engineering Physics, 596 Yinhe Road, Shuangliu, Chengdu610200, P. R. China
| | - Xudong Cui
- Sichuan Research Center of New Materials, Institute of Chemical Materials, China Academy of Engineering Physics, 596 Yinhe Road, Shuangliu, Chengdu610200, P. R. China
| | - Jun Tang
- College of Physics, Sichuan University, Chengdu610064, P. R. China
- Key Laboratory of Radiation Physics and Technology of Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu610064, P. R. China
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10
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Kim H, Jung MJ, Byun J, Lee MH, Choi BJ. Schottky Contacts to ZnO-Nanocoated SnSe Powders by Atomic Layer Deposition. ACS OMEGA 2022; 7:41606-41613. [PMID: 36406507 PMCID: PMC9670905 DOI: 10.1021/acsomega.2c05584] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/30/2022] [Accepted: 10/25/2022] [Indexed: 06/16/2023]
Abstract
In this study, SnSe powders are nanocoated with ZnO grown by atomic layer deposition (ALD) with different ALD ZnO pulse cycles. Subsequently, the current transport mechanisms of Pt/ZnO-coated SnSe junctions are electrically investigated. A decrease in the current and an increase in the series resistance are observed at 300 K with increasing ZnO pulse cycles (i.e., increasing the thickness of the ZnO layer). The series resistance is similar at 450 K for all samples. The difference in the barrier height for each sample is insignificant, thus indicating that the ZnO coating marginally alters the barrier height at the Pt/SnSe junction. The inhomogeneous Schottky barrier can explain both the forward and reverse bias current conduction. The lowest ideality factor observed for the SnSe sample with ZnO 100 cycles is related to the lowest standard deviation (i.e., the lowest spatial fluctuation of the barrier height). Furthermore, the electrical conductivity is comparable to that of the sample without ZnO coating, thus suggesting that ZnO-coated SnSe by ALD can be considered to improve the thermoelectric device performance.
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Affiliation(s)
- Hogyoung Kim
- Department
of Visual Optics, Seoul National University
of Science and Technology (Seoultech), Seoul01811, Republic
of Korea
| | - Myeong Jun Jung
- Department
of Visual Optics, Seoul National University
of Science and Technology (Seoultech), Seoul01811, Republic
of Korea
| | - Jongmin Byun
- Department
of Visual Optics, Seoul National University
of Science and Technology (Seoultech), Seoul01811, Republic
of Korea
| | - Min Hwan Lee
- Department
of Mechanical Engineering, University of
California Merced, 5200 North Lake Road, Merced, California95343, United States
| | - Byung Joon Choi
- Department
of Materials Science and Engineering, Seoul
National University of Science and Technology (Seoultech), Seoul01811, Republic of Korea
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11
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Shi Q, Li J, Zhao X, Chen Y, Zhang F, Zhong Y, Ang R. Comprehensive Insight into p-Type Bi 2Te 3-Based Thermoelectrics near Room Temperature. ACS APPLIED MATERIALS & INTERFACES 2022; 14:49425-49445. [PMID: 36301226 DOI: 10.1021/acsami.2c13109] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Bi2Te3 is a well-recognized material for its unique properties in diverse thermoelectric applications near room temperature. The considerable efforts on Bi2Te3-based alloys have been extremely extensive in recent years, and thus the latest breakthroughs in high-performance p-type (Bi, Sb)2Te3 alloys are comprehensively reviewed to further implement applications. Effective strategies to further improve the thermoelectric performance are summarized from the perspective of enhancing the power factor and minimizing the lattice thermal conductivity. Furthermore, the surface states of topological insulators are investigated to provide a possibility of advancing (Bi, Sb)2Te3 thermoelectrics. Finally, future challenges and outlooks are overviewed. This review will provide potential guidance toward designing and developing high-efficient Bi2Te3-based and other thermoelectrics.
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Affiliation(s)
- Qing Shi
- Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu610064, China
| | - Juan Li
- Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen518055, China
| | - Xuanwei Zhao
- Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu610064, China
| | - Yiyuan Chen
- Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu610064, China
| | - Fujie Zhang
- Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu610064, China
| | - Yan Zhong
- Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu610064, China
| | - Ran Ang
- Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu610064, China
- Institute of New Energy and Low-Carbon Technology, Sichuan University, Chengdu610065, China
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12
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Shi Q, Zhao X, Chen Y, Lin L, Ren D, Liu B, Zhou C, Ang R. Cu 2Te Incorporation-Induced High Average Thermoelectric Performance in p-Type Bi 2Te 3 Alloys. ACS APPLIED MATERIALS & INTERFACES 2022; 14:45582-45589. [PMID: 36170600 DOI: 10.1021/acsami.2c13527] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
p-Type (Bi, Sb)2Te3 alloys are attractive materials for near-room-temperature thermoelectric applications due to their high atomic masses and large spin-orbit interactions. However, their narrow band gaps originating from spin-orbit interactions lead to bipolar excitation, thereby limiting average thermoelectrics within a local temperature region (300-400 K). Here, we introduce Cu2Te into the Bi0.3Sb1.7Te3 (BST) lattice to implement high thermoelectrics over a wide temperature range. The carrier concentration is synergistically modulated via Cu substitution and the evolution of intrinsic point defects (antisites and vacancies). Furthermore, the chain effect caused by Cu2Te incorporation in BST is reflected in the improvement of the weighted mobility μW, thereby enhancing the power factor in the whole temperature range. Extrinsic and intrinsic defects due to the incorporation of Cu2Te lead to a significant reduction in the lattice thermal conductivity κL, which is further demonstrated by Raman spectroscopy. Combining κL and μW, the quantity factor B increases from 0.5 to 1 with increasing Cu2Te content due to not only the reduction of κL but also a significant improvement in electrical properties. Eventually, a peak figure of merit (zT) of ∼1.15 at 423 K is achieved in BST-Cu2Te samples, and an average figure of merit (zTave) of ∼1.12 (350-500 K) surpasses other excellent p-type Bi2Te3-based thermoelectrics. Such a synergistic effect can facilitate near-room-temperature thermoelectric applications of Bi2Te3-based alloys and provide chances for the technology space in thermoelectrics.
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Affiliation(s)
- Qing Shi
- Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, China
| | - Xuanwei Zhao
- Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, China
| | - Yiyuan Chen
- Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, China
| | - Liwei Lin
- Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, China
| | - Ding Ren
- Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, China
| | - Bo Liu
- Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, China
| | - Chunliang Zhou
- Yantai Research Institute, Harbin Engineering University, Yantai 264006, China
| | - Ran Ang
- Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, China
- Institute of New Energy and Low-Carbon Technology, Sichuan University, Chengdu 610065, China
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13
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Fang W, Chen Y, Kuang K, Li M. Excellent Thermoelectric Performance of 2D CuMN 2 (M = Sb, Bi; N = S, Se) at Room Temperature. MATERIALS (BASEL, SWITZERLAND) 2022; 15:6700. [PMID: 36234041 PMCID: PMC9572028 DOI: 10.3390/ma15196700] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/27/2022] [Revised: 09/18/2022] [Accepted: 09/23/2022] [Indexed: 06/16/2023]
Abstract
2D copper-based semiconductors generally possess low lattice thermal conductivity due to their strong anharmonic scattering and quantum confinement effect, making them promising candidate materials in the field of high-performance thermoelectric devices. In this work, we proposed four 2D copper-based materials, namely CuSbS2, CuSbSe2, CuBiS2, and CuBiSe2. Based on the framework of density functional theory and Boltzmann transport equation, we revealed that the monolayers possess high stability and narrow band gaps of 0.57~1.10 eV. Moreover, the high carrier mobilities (102~103 cm2·V-1·s-1) of these monolayers lead to high conductivities (106~107 Ω-1·m-1) and high-power factors (18.04~47.34 mW/mK2). Besides, as the strong phonon-phonon anharmonic scattering, the monolayers also show ultra-low lattice thermal conductivities of 0.23~3.30 W/mK at 300 K. As results show, all the monolayers for both p-type and n-type simultaneously show high thermoelectric figure of merit (ZT) of about 0.91~1.53 at room temperature.
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Affiliation(s)
- Wenyu Fang
- Ministry-of-Education Key Laboratory of Green Preparation and Application for Functional Materials, Hubei Key Lab of Ferro & Piezoelectric Materials and Devices, Hubei Key Laboratory of Polymer Materials, and School of Materials Science & Engineering, Hubei University, Wuhan 430062, China
- Public Health and Management School, Hubei University of Medicine, Shiyan 442000, China
| | - Yue Chen
- Ministry-of-Education Key Laboratory of Green Preparation and Application for Functional Materials, Hubei Key Lab of Ferro & Piezoelectric Materials and Devices, Hubei Key Laboratory of Polymer Materials, and School of Materials Science & Engineering, Hubei University, Wuhan 430062, China
| | - Kuan Kuang
- Ministry-of-Education Key Laboratory of Green Preparation and Application for Functional Materials, Hubei Key Lab of Ferro & Piezoelectric Materials and Devices, Hubei Key Laboratory of Polymer Materials, and School of Materials Science & Engineering, Hubei University, Wuhan 430062, China
| | - Mingkai Li
- Ministry-of-Education Key Laboratory of Green Preparation and Application for Functional Materials, Hubei Key Lab of Ferro & Piezoelectric Materials and Devices, Hubei Key Laboratory of Polymer Materials, and School of Materials Science & Engineering, Hubei University, Wuhan 430062, China
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14
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Li S, Zhang J, Liu D, Wang Y, Zhang J. Improving thermoelectric performance by constructing a SnTe/ZnO core-shell structure. RSC Adv 2022; 12:23074-23082. [PMID: 36090405 PMCID: PMC9386689 DOI: 10.1039/d2ra04255j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/10/2022] [Accepted: 08/09/2022] [Indexed: 11/26/2022] Open
Abstract
SnTe is becoming a new research focus as an intermediate temperature thermoelectric material for its environment-friendly property. Herein, the SnTe/ZnO core-shell structure prepared by a facile hydrothermal method is firstly constructed to enhance the thermoelectric performance. The characterization results demonstrate that ZnO nanosheets are coated on the surface of SnTe particles by in situ synthesis and converted into ZnO nano-dots by spark plasma sintering. The energy barriers built by the SnTe/ZnO core-shell structure improve the Seebeck coefficient effectively. Additionally, the increased density of interfaces induced by ZnO can effectively scatter low/medium frequency phonons, reducing the lattice thermal conductivity in the low/medium temperature region. Further, the point defects caused by Cu2Te-alloying strengthen the scattering of high frequency phonons. The lattice thermal conductivity reaches 0.48 W m-1 K-1, which is close to the amorphous limit of pristine SnTe. As a result, a peak ZT value of 0.94 is achieved at 823 K for SnTe(Cu2Te)0.06-1.5% ZnO, benefiting from the synergistic optimization of thermal and electrical properties. This provides a new idea for exploring an optimization strategy of thermoelectric performance.
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Affiliation(s)
- Song Li
- School of Materials Science and Engineering, Hefei University of Technology Hefei 230009 China
| | - Jingwen Zhang
- School of Materials Science and Engineering, Hefei University of Technology Hefei 230009 China
- School of Physics and Materials Engineering, Hefei Normal University Hefei 230061 China
| | - Dawei Liu
- School of Materials Science and Engineering, Hefei University of Technology Hefei 230009 China
| | - Yan Wang
- School of Materials Science and Engineering, Hefei University of Technology Hefei 230009 China
| | - Jiuxing Zhang
- School of Materials Science and Engineering, Hefei University of Technology Hefei 230009 China
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15
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Microstructure Evolution in Plastic Deformed Bismuth Telluride for the Enhancement of Thermoelectric Properties. MATERIALS 2022; 15:ma15124204. [PMID: 35744268 PMCID: PMC9230931 DOI: 10.3390/ma15124204] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/19/2022] [Revised: 06/04/2022] [Accepted: 06/09/2022] [Indexed: 11/25/2022]
Abstract
Thermoelectric generators are solid-state energy-converting devices that are promising alternative energy sources. However, during the fabrication of these devices, many waste scraps that are not eco-friendly and with high material cost are produced. In this work, a simple powder processing technology is applied to prepare n-type Bi2Te3 pellets by cold pressing (high pressure at room temperature) and annealing the treatment with a canning package to recycle waste scraps. High-pressure cold pressing causes the plastic deformation of densely packed pellets. Then, the thermoelectric properties of pellets are improved through high-temperature annealing (500 ∘C) without phase separation. This enhancement occurs because tellurium cannot escape from the canning package. In addition, high-temperature annealing induces rapid grain growth and rearrangement, resulting in a porous structure. Electrical conductivity is increased by abnormal grain growth, whereas thermal conductivity is decreased by the porous structure with phonon scattering. Owing to the low thermal conductivity and satisfactory electrical conductivity, the highest ZT value (i.e., 1.0) is obtained by the samples annealed at 500 ∘C. Hence, the proposed method is suitable for a cost-effective and environmentally friendly way.
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16
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Zhang Z, Tao Q, Bai H, Tang H, Cao Y, Shi Y, Wu J, Su X, Tang X. Regulation of exciton for high thermoelectric performance in (Bi, Sb)2Te3 alloys via doping with Pb and multi-scale microstructure. Ann Ital Chir 2021. [DOI: 10.1016/j.jeurceramsoc.2021.08.041] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/15/2022]
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17
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Ma N, Li F, Li JG, Liu X, Zhang DB, Li YY, Chen L, Wu LM. Mixed-Valence CsCu 4Se 3: Large Phonon Anharmonicity Driven by the Hierarchy of the Rigid [(Cu +) 4(Se 2-) 2](Se -) Double Anti-CaF 2 Layer and the Soft Cs + Sublattice. J Am Chem Soc 2021; 143:18490-18501. [PMID: 34705460 DOI: 10.1021/jacs.1c07629] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Abstract
Crystalline solids that exhibit inherently low lattice thermal conductivity (κlat) have attracted a great deal of attention because they offer the only independent control for pursuing a high thermoelectric figure of merit (ZT). Herein, we report the successful preparation of CsCu4Q3 (Q = S (compound 1), Se (compound 2)) with the aid of a safe and facile boron-chalcogen method. The single-crystal diffraction data confirm the P4/mmm hierarchical structures built up by the mixed-valence [(Cu+)4(Q2-)2](Q-) double anti-CaF2 layer and the NaCl-type Cs+ sublattice involving multiple bonding interactions. The electron-poor compound CsCu4Q3 features Cu-Q antibonding states around EF that facilitates a high σ value of 3100 S/cm in 2 at 323 K. Significantly, the ultralow κlat value of 2, 0.20 W/m/K at 650 K (70% lower than that of Cu2Se), is mainly driven by the vibrational coupling of the rigid double anti-CaF2 layer and the soft NaCl-type sublattice. The hierarchical structure increases the bond multiplicity, which eventually leads to a large phonon anharmonicity, as evidenced by the effective scattering of the low-lying optical phonons to the heat-carrying acoustic phonons. Consequently, the acoustic phonon frequency in 2 drops sharply from 118 cm-1 (of Cu2Se) to 48 cm-1. In addition, the elastic properties indicate that the hierarchical structure largely inhibits the transverse phonon modes, leading to a sound velocity (1571 m/s) and a Debye temperature (189 K) lower than those of Cu2Se (2320 m/s; 292 K).
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Affiliation(s)
- Ni Ma
- Center for Advanced Materials Research, Advanced Institute of Natural Sciences, Beijing Normal University at Zhuhai, Zhuhai 519087, People's Republic of China
| | - Fan Li
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Jian-Gao Li
- College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Xin Liu
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Dong-Bo Zhang
- College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Yan-Yan Li
- Center for Advanced Materials Research, Advanced Institute of Natural Sciences, Beijing Normal University at Zhuhai, Zhuhai 519087, People's Republic of China
| | - Ling Chen
- Center for Advanced Materials Research, Advanced Institute of Natural Sciences, Beijing Normal University at Zhuhai, Zhuhai 519087, People's Republic of China.,Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Li-Ming Wu
- Center for Advanced Materials Research, Advanced Institute of Natural Sciences, Beijing Normal University at Zhuhai, Zhuhai 519087, People's Republic of China.,Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry, Beijing Normal University, Beijing 100875, People's Republic of China
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18
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Zhang Z, Cao Y, Tao Q, Yan Y, Su X, Tang X. Distinct role of Sn and Ge doping on thermoelectric properties in p-type (Bi, Sb)2Te3-alloys. J SOLID STATE CHEM 2020. [DOI: 10.1016/j.jssc.2020.121722] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/25/2022]
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19
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High-performance compliant thermoelectric generators with magnetically self-assembled soft heat conductors for self-powered wearable electronics. Nat Commun 2020; 11:5948. [PMID: 33230141 PMCID: PMC7684283 DOI: 10.1038/s41467-020-19756-z] [Citation(s) in RCA: 48] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/28/2020] [Accepted: 10/28/2020] [Indexed: 11/25/2022] Open
Abstract
Softening of thermoelectric generators facilitates conformal contact with arbitrary-shaped heat sources, which offers an opportunity to realize self-powered wearable applications. However, existing wearable thermoelectric devices inevitably exhibit reduced thermoelectric conversion efficiency due to the parasitic heat loss in high-thermal-impedance polymer substrates and poor thermal contact arising from rigid interconnects. Here, we propose compliant thermoelectric generators with intrinsically stretchable interconnects and soft heat conductors that achieve high thermoelectric performance and unprecedented conformability simultaneously. The silver-nanowire-based soft electrodes interconnect bismuth-telluride-based thermoelectric legs, effectively absorbing strain energy, which allows our thermoelectric generators to conform perfectly to curved surfaces. Metal particles magnetically self-assembled in elastomeric substrates form soft heat conductors that significantly enhance the heat transfer to the thermoelectric legs, thereby maximizing energy conversion efficiency on three-dimensional heat sources. Moreover, automated additive manufacturing paves the way for realizing self-powered wearable applications comprising hundreds of thermoelectric legs with high customizability under ambient conditions. Though flexible thermoelectric generators (TEGs) are attractive for energy harvesting applications, existing devices show low efficiency due to heat loss and poor thermal contact. Here, the authors report high-performance conformable TEGs with stretchable interconnects and soft heat conductors.
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20
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Effect of ZnO and SnO 2 Nanolayers at Grain Boundaries on Thermoelectric Properties of Polycrystalline Skutterudites. NANOMATERIALS 2020; 10:nano10112270. [PMID: 33207750 PMCID: PMC7697921 DOI: 10.3390/nano10112270] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/13/2020] [Revised: 11/08/2020] [Accepted: 11/12/2020] [Indexed: 11/17/2022]
Abstract
Nanostructuring is considered one of the key approaches to achieve highly efficient thermoelectric alloys by reducing thermal conductivity. In this study, we investigated the effect of oxide (ZnO and SnO2) nanolayers at the grain boundaries of polycrystalline In0.2Yb0.1Co4Sb12 skutterudites on their electrical and thermal transport properties. Skutterudite powders with oxide nanolayers were prepared by atomic layer deposition method, and the number of deposition cycles was varied to control the coating thickness. The coated powders were consolidated by spark plasma sintering. With increasing number of deposition cycle, the electrical conductivity gradually decreased, while the Seebeck coefficient changed insignificantly; this indicates that the carrier mobility decreased due to the oxide nanolayers. In contrast, the lattice thermal conductivity increased with an increase in the number of deposition cycles, demonstrating the reduction in phonon scattering by grain boundaries owing to the oxide nanolayers. Thus, we could easily control the thermoelectric properties of skutterudite materials through adjusting the oxide nanolayer by atomic layer deposition method.
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21
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Shah D, Patel DI, Major GH, Argyle MD, Linford MR. A new holder/container with a porous cover for atomic layer deposition on particles, with transport analysis and detailed characterization of the resulting materials. SURF INTERFACE ANAL 2020. [DOI: 10.1002/sia.6895] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
Affiliation(s)
- Dhruv Shah
- Department of Chemistry and Biochemistry Brigham Young University Provo UT 84602 USA
| | - Dhananjay I. Patel
- Department of Chemistry and Biochemistry Brigham Young University Provo UT 84602 USA
| | - George H. Major
- Department of Chemistry and Biochemistry Brigham Young University Provo UT 84602 USA
| | - Morris D. Argyle
- Department of Chemical Engineering Brigham Young University Provo UT 84602 USA
| | - Matthew R. Linford
- Department of Chemistry and Biochemistry Brigham Young University Provo UT 84602 USA
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22
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Jin Y, Hwang J, Han MK, Shon W, Rhyee JS, Kim SJ. Size-Controlled Au-Cu 2Se Core-Shell Nanoparticles and Their Thermoelectric Properties. ACS APPLIED MATERIALS & INTERFACES 2020; 12:36589-36599. [PMID: 32667768 DOI: 10.1021/acsami.0c08149] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
One promising approach to improving thermoelectric energy conversion is to use nanostructured interfaces that enhance Seebeck coefficient while reducing thermal conductivity. Here, we synthesized Au-Cu2Se core-shell nanoparticles with different shell thicknesses by controlling the precursor concentration in solution. The Au-Cu2Se core-shell nanoparticles are about 37-53 nm in size, and the cores of the nanostructures are composed of Au nanoparticles with sizes of ∼11 nm. The effect of shell thickness on the thermoelectric properties of core-shell nanocomposites is investigated after sintering the core-shell nanoparticles into pellets using the spark plasma sintering (SPS) technique. The power factor was optimized by the synergetic effect of the improvement of Seebeck coefficient by energy filtering in the Au/Cu2Se interface and the effective tuning of carrier concentration by Ohmic contact in the interface. The lattice thermal conductivity of core-shell nanocomposites is reduced by coherent phonon scattering, which is caused by the wavelike interference of phonons due to the phase shift in the core-shell interface. The highest ZT value of 0.61 is obtained at 723 K for Au-Cu2Se core-shell nanocomposite with a shell thickness of 21 nm, which is higher than that of pure Cu2Se nanocomposite or a mixture of Au and Cu2Se particles.
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Affiliation(s)
- Yingshi Jin
- Department of Chemistry and Nano Science, Ewha Womans University, Seoul 03760, Korea
| | - Junphil Hwang
- Department of Chemistry and Nano Science, Ewha Womans University, Seoul 03760, Korea
| | - Mi-Kyung Han
- Department of Chemistry and Nano Science, Ewha Womans University, Seoul 03760, Korea
| | - Wonhyuk Shon
- Department of Applied Physics and Institute of Applied Sciences, Kyung Hee University, Yongin 17104, Korea
- Korea Atomic Energy Research Institute (KAERI), Daejeon 34057, Korea
| | - Jong-Soo Rhyee
- Department of Applied Physics and Institute of Applied Sciences, Kyung Hee University, Yongin 17104, Korea
| | - Sung-Jin Kim
- Department of Chemistry and Nano Science, Ewha Womans University, Seoul 03760, Korea
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Lim SS, Kim KC, Jeon H, Kim JY, Kang JY, Park HH, Baek SH, Kim JS, Kim SK. Enhanced thermal stability of Bi2Te3-based alloys via interface engineering with atomic layer deposition. Ann Ital Chir 2020. [DOI: 10.1016/j.jeurceramsoc.2020.04.013] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/24/2022]
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24
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Shi XL, Zou J, Chen ZG. Advanced Thermoelectric Design: From Materials and Structures to Devices. Chem Rev 2020; 120:7399-7515. [PMID: 32614171 DOI: 10.1021/acs.chemrev.0c00026] [Citation(s) in RCA: 377] [Impact Index Per Article: 94.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/24/2022]
Abstract
The long-standing popularity of thermoelectric materials has contributed to the creation of various thermoelectric devices and stimulated the development of strategies to improve their thermoelectric performance. In this review, we aim to comprehensively summarize the state-of-the-art strategies for the realization of high-performance thermoelectric materials and devices by establishing the links between synthesis, structural characteristics, properties, underlying chemistry and physics, including structural design (point defects, dislocations, interfaces, inclusions, and pores), multidimensional design (quantum dots/wires, nanoparticles, nanowires, nano- or microbelts, few-layered nanosheets, nano- or microplates, thin films, single crystals, and polycrystalline bulks), and advanced device design (thermoelectric modules, miniature generators and coolers, and flexible thermoelectric generators). The outline of each strategy starts with a concise presentation of their fundamentals and carefully selected examples. In the end, we point out the controversies, challenges, and outlooks toward the future development of thermoelectric materials and devices. Overall, this review will serve to help materials scientists, chemists, and physicists, particularly students and young researchers, in selecting suitable strategies for the improvement of thermoelectrics and potentially other relevant energy conversion technologies.
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Affiliation(s)
- Xiao-Lei Shi
- Centre for Future Materials, University of Southern Queensland, Springfield Central, Queensland 4300, Australia.,School of Mechanical and Mining Engineering, The University of Queensland, Brisbane, Queensland 4072, Australia
| | - Jin Zou
- School of Mechanical and Mining Engineering, The University of Queensland, Brisbane, Queensland 4072, Australia.,Centre for Microscopy and Microanalysis, The University of Queensland, Brisbane, Queensland 4072, Australia
| | - Zhi-Gang Chen
- Centre for Future Materials, University of Southern Queensland, Springfield Central, Queensland 4300, Australia.,School of Mechanical and Mining Engineering, The University of Queensland, Brisbane, Queensland 4072, Australia
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Lim SS, Jung SJ, Kim BK, Kim DI, Lee BH, Won SO, Shin J, Park HH, Kim SK, Kim JS, Baek SH. Combined hot extrusion and spark plasma sintering method for producing highly textured thermoelectric Bi2Te3 alloys. Ann Ital Chir 2020. [DOI: 10.1016/j.jeurceramsoc.2020.03.008] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
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26
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Carrier Modulation in Bi2Te3-Based Alloys via Interfacial Doping with Atomic Layer Deposition. COATINGS 2020. [DOI: 10.3390/coatings10060572] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
The carrier concentration in Bi2Te3-based alloys is a decisive factor in determining their thermoelectric performance. Herein, we propose a novel approach to modulate the carrier concentration via the encapsulation of the alloy precursor powders. Atomic layer deposition (ALD) of ZnO and SnO2 was performed over the Bi2Te2.7Se0.3 powders. After spark plasma sintering at 500 °C for 20 min, the carrier concentration in the ZnO-coated samples decreased, while the carrier concentration in the SnO2-coated samples increased. This trend was more pronounced as the number of ALD cycles increased. This was attributed to the intermixing of the metal ions at the interface. Zn2+ substituted for Bi3+ at the interface acted as an acceptor, while Sn4+ substituted for Bi3+ acted as a donor. This indicates that the carrier concentration can be adjusted depending on the materials deposited with ALD. The use of fine powders changes the carrier concentration more strongly, because the quantity of material deposited increases with the effective surface area. Therefore, the proposed approach would provide opportunities to precisely optimize the carrier concentration for high thermoelectric performance.
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Qiu X, Qiu P, Deng T, Huang H, Du X, Shi X, Chen L. Thermoelectric Properties of Nano‐grained Mooihoekite Cu
9
Fe
9
S
16. Z Anorg Allg Chem 2020. [DOI: 10.1002/zaac.202000017] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
Affiliation(s)
- Xianxiu Qiu
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure Shanghai Institute of Ceramics Chinese Academy of Sciences 200050 Shanghai P. R. China
- Center of Materials Science and Optoelectronics Engineering Shanghai Institute of Ceramics University of Chinese Academy of Sciences 100049 Beijing P. R. China
| | - Pengfei Qiu
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure Shanghai Institute of Ceramics Chinese Academy of Sciences 200050 Shanghai P. R. China
| | - Tingting Deng
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure Shanghai Institute of Ceramics Chinese Academy of Sciences 200050 Shanghai P. R. China
- Center of Materials Science and Optoelectronics Engineering Shanghai Institute of Ceramics University of Chinese Academy of Sciences 100049 Beijing P. R. China
- School of Physical Science and Technology Shanghai Institute of Ceramics ShanghaiTech University 201210 Shanghai P. R. China
| | - Hui Huang
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure Shanghai Institute of Ceramics Chinese Academy of Sciences 200050 Shanghai P. R. China
- Center of Materials Science and Optoelectronics Engineering Shanghai Institute of Ceramics University of Chinese Academy of Sciences 100049 Beijing P. R. China
| | - Xiaolong Du
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure Shanghai Institute of Ceramics Chinese Academy of Sciences 200050 Shanghai P. R. China
- Center of Materials Science and Optoelectronics Engineering Shanghai Institute of Ceramics University of Chinese Academy of Sciences 100049 Beijing P. R. China
| | - Xun Shi
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure Shanghai Institute of Ceramics Chinese Academy of Sciences 200050 Shanghai P. R. China
| | - Lidong Chen
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure Shanghai Institute of Ceramics Chinese Academy of Sciences 200050 Shanghai P. R. China
- Center of Materials Science and Optoelectronics Engineering Shanghai Institute of Ceramics University of Chinese Academy of Sciences 100049 Beijing P. R. China
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28
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Ma N, Li YY, Chen L, Wu LM. α-CsCu5Se3: Discovery of a Low-Cost Bulk Selenide with High Thermoelectric Performance. J Am Chem Soc 2020; 142:5293-5303. [DOI: 10.1021/jacs.0c00062] [Citation(s) in RCA: 26] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Affiliation(s)
- Ni Ma
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry, Beijing Normal University, Beijing 100875, People′s Republic of China
| | - Yan-Yan Li
- Key Laboratory of Theoretical and Computational Chemistry of Ministry of Education, College of Chemistry, Beijing Normal University, Beijing 100875, People′s Republic of China
| | - Ling Chen
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry, Beijing Normal University, Beijing 100875, People′s Republic of China
| | - Li-Ming Wu
- Key Laboratory of Theoretical and Computational Chemistry of Ministry of Education, College of Chemistry, Beijing Normal University, Beijing 100875, People′s Republic of China
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29
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Huang L, Chen J, Yu Z, Tang D. Self-Powered Temperature Sensor with Seebeck Effect Transduction for Photothermal–Thermoelectric Coupled Immunoassay. Anal Chem 2020; 92:2809-2814. [DOI: 10.1021/acs.analchem.9b05218] [Citation(s) in RCA: 150] [Impact Index Per Article: 37.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
Affiliation(s)
- Lingting Huang
- Key Laboratory for Analytical Science of Food Safety
and Biology, Ministry of Education and Fujian Province, Department of Chemistry, Fuzhou University, Fuzhou 350108, People’s Republic of China
| | - Jialun Chen
- Key Laboratory for Analytical Science of Food Safety
and Biology, Ministry of Education and Fujian Province, Department of Chemistry, Fuzhou University, Fuzhou 350108, People’s Republic of China
| | - Zhonghua Yu
- Key Laboratory for Analytical Science of Food Safety
and Biology, Ministry of Education and Fujian Province, Department of Chemistry, Fuzhou University, Fuzhou 350108, People’s Republic of China
| | - Dianping Tang
- Key Laboratory for Analytical Science of Food Safety
and Biology, Ministry of Education and Fujian Province, Department of Chemistry, Fuzhou University, Fuzhou 350108, People’s Republic of China
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