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Choi J, Crust KJ, Li L, Lee K, Luo J, So JP, Watanabe K, Taniguchi T, Hwang HY, Mak KF, Shan J, Fuchs GD. Tuning Exciton Emission via Ferroelectric Polarization at a Heterogeneous Interface between a Monolayer Transition Metal Dichalcogenide and a Perovskite Oxide Membrane. NANO LETTERS 2024; 24:8948-8955. [PMID: 38996059 DOI: 10.1021/acs.nanolett.4c01853] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/14/2024]
Abstract
We demonstrate the integration of a thin BaTiO3 (BTO) membrane with monolayer MoSe2 in a dual-gate device that enables in situ manipulation of the BTO ferroelectric polarization with a voltage pulse. While two-dimensional (2D) transition metal dichalcogenides (TMDs) offer remarkable adaptability, their hybrid integration with other families of functional materials beyond the realm of 2D materials has been challenging. Released functional oxide membranes offer a solution for 2D/3D integration via stacking. 2D TMD excitons can serve as a local probe of the ferroelectric polarization in BTO at a heterogeneous interface. Using photoluminescence (PL) of MoSe2 excitons to optically read out the doping level, we find that the relative population of charge carriers in MoSe2 depends sensitively on the ferroelectric polarization. This finding points to a promising avenue for future-generation versatile sensing devices with high sensitivity, fast readout, and diverse applicability for advanced signal processing.
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Affiliation(s)
- Jaehong Choi
- School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14850, United States
| | - Kevin J Crust
- Department of Physics, Stanford University, Stanford, California 94305, United States
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Lizhong Li
- School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14850, United States
| | - Kihong Lee
- Department of Physics, Cornell University, Ithaca, New York 14850, United States
| | - Jialun Luo
- Department of Physics, Cornell University, Ithaca, New York 14850, United States
| | - Jae-Pil So
- School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14850, United States
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Harold Y Hwang
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
- Department of Applied Physics, Stanford University, Stanford, California 94305, United States
| | - Kin Fai Mak
- School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14850, United States
- Department of Physics, Cornell University, Ithaca, New York 14850, United States
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14850, United States
| | - Jie Shan
- School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14850, United States
- Department of Physics, Cornell University, Ithaca, New York 14850, United States
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14850, United States
| | - Gregory D Fuchs
- School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14850, United States
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14850, United States
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Li T, Chen H, Wang K, Hao Y, Zhang L, Watanabe K, Taniguchi T, Hong X. Transport Anisotropy in One-Dimensional Graphene Superlattice in the High Kronig-Penney Potential Limit. PHYSICAL REVIEW LETTERS 2024; 132:056204. [PMID: 38364165 DOI: 10.1103/physrevlett.132.056204] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/26/2023] [Revised: 09/11/2023] [Accepted: 01/05/2024] [Indexed: 02/18/2024]
Abstract
One-dimensional graphene superlattice subjected to strong Kronig-Penney (KP) potential is promising for achieving the electron-lensing effect, while previous studies utilizing the modulated dielectric gates can only yield a moderate, spatially dispersed potential profile. Here, we realize high KP potential modulation of graphene via nanoscale ferroelectric domain gating. Graphene transistors are fabricated on PbZr_{0.2}Ti_{0.8}O_{3} back gates patterned with periodic, 100-200 nm wide stripe domains. Because of band reconstruction, the h-BN top gating induces satellite Dirac points in samples with current along the superlattice vector s[over ^], a feature absent in samples with current perpendicular to s[over ^]. The satellite Dirac point position scales with the superlattice period (L) as ∝L^{β}, with β=-1.18±0.06. These results can be well explained by the high KP potential scenario, with the Fermi velocity perpendicular to s[over ^] quenched to about 1% of that for pristine graphene. Our study presents a promising material platform for realizing electron supercollimation and investigating flat band phenomena.
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Affiliation(s)
- Tianlin Li
- Department of Physics and Astronomy and Nebraska Center of Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, USA
| | - Hanying Chen
- Department of Physics and Astronomy and Nebraska Center of Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, USA
| | - Kun Wang
- Department of Physics and Astronomy and Nebraska Center of Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, USA
| | - Yifei Hao
- Department of Physics and Astronomy and Nebraska Center of Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, USA
| | - Le Zhang
- Department of Physics and Astronomy and Nebraska Center of Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, USA
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Xia Hong
- Department of Physics and Astronomy and Nebraska Center of Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, USA
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