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Mamgain S, Yella A. Dynamics of interfacial charge transfer between CsPbBr 3perovskite nanocrystals and molecular acceptors for photodetection application. NANOTECHNOLOGY 2024; 35:165202. [PMID: 38176067 DOI: 10.1088/1361-6528/ad1afe] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/29/2023] [Accepted: 01/04/2024] [Indexed: 01/06/2024]
Abstract
Perovskite nanocrystals (NCs) recently emerged as a suitable candidate for optoelectronic applications because of its simplistic synthesis approach and superior optical properties. For better device performance, the effective absorption of incident photons and the understanding of charge transfer (CT) process are the basic requirements. Herein, we investigate the interfacial charge transfer dynamics of CsPbBr3NCs in the presence of different molecular acceptors; 7,7,8,8-Tetracyanoquinodimethane (TCNQ) and 11,11,12,12 tetracyanonaphtho-2,6-quinodimethane (TCNAQ). The vivid change in CT dynamics at the interfaces of NCs and two different molecular acceptors (TCNQ and TCNAQ) has been observed. The results demonstrate that the ground state complex formation in the presence of TCNQ acts as additional driving force to accelerate the charge transfer between the NCs and molecular acceptor. Moreover, this donor (NCs)-acceptor (TCNQ, TCNAQ) system results in the higher absorption of incident photons. Finally, the photo detector based on CsPbBr3-TCNQ system was fabricated for the first time. The device exhibited a high on-off ratio (104). Furthermore, the CsPbBr3-TCNQ photodetector shows a fast photoresponse times of 180 ms/110 ms (rise/decay time) with a specific detectivity (D*) of 5.2 × 1011Jones. The simple synthesis and outstanding photodetection abilities of this perovskite NCs-molecular acceptor system make them potential candidates for optoelectronic applications.
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Affiliation(s)
- Swati Mamgain
- Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, 400076, India
| | - Aswani Yella
- Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, 400076, India
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Huang Y, Yu J, Wu Z, Li B, Li M. All-inorganic lead halide perovskites for photocatalysis: a review. RSC Adv 2024; 14:4946-4965. [PMID: 38327811 PMCID: PMC10847908 DOI: 10.1039/d3ra07998h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/22/2023] [Accepted: 01/11/2024] [Indexed: 02/09/2024] Open
Abstract
Nowadays, environmental pollution and the energy crisis are two significant concerns in the world, and photocatalysis is seen as a key solution to these issues. All-inorganic lead halide perovskites have been extensively utilized in photocatalysis and have become one of the most promising materials in recent years. The superior performance of all-inorganic lead halide perovskites distinguish them from other photocatalysts. Since pure lead halide perovskites typically have shortcomings, such as low stability, poor active sites, and ineffective carrier extraction, that restrict their use in photocatalytic reactions, it is crucial to enhance their photocatalytic activity and stability. Huge progress has been made to deal with these critical issues to enhance the effects of all-inorganic lead halide perovskites as efficient photocatalysts in a wide range of applications. In this manuscript, the synthesis methods of all-inorganic lead halide perovskites are discussed, and promising strategies are proposed for superior photocatalytic performance. Moreover, the research progress of photocatalysis applications are summarized; finally, the issues of all-inorganic lead halide perovskite photocatalytic materials at the current state and future research directions are also analyzed and discussed. We hope that this manuscript will provide novel insights to researchers to further promote the research on photocatalysis based on all-inorganic lead halide perovskites.
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Affiliation(s)
- Yajie Huang
- College of Forestry, Northeast Forestry University Harbin 150040 China +86-451-82192120
| | - Jiaxing Yu
- College of Forestry, Northeast Forestry University Harbin 150040 China +86-451-82192120
| | - Zhiyuan Wu
- College of Forestry, Northeast Forestry University Harbin 150040 China +86-451-82192120
| | - Borui Li
- College of Forestry, Northeast Forestry University Harbin 150040 China +86-451-82192120
| | - Ming Li
- College of Forestry, Northeast Forestry University Harbin 150040 China +86-451-82192120
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Le QT, Yun H, Park H, Jeong HD. Effect of annealing temperature and capping ligands on the electron mobility and electronic structure of indium oxide nanocrystal thin films: a comparative study with oleic acid, benzoic acid, and 4-aminobenzoic acid. Phys Chem Chem Phys 2023; 25:30975-30992. [PMID: 37937718 DOI: 10.1039/d3cp03842d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2023]
Abstract
The effect of annealing temperature and capping ligands on the electron mobility and electronic structure of indium oxide (In2O3) nanocrystals (NCs) was investigated using oleic acid (OA), benzoic acid (BA), and 4-aminobenzoic acid (4ABA). The NCs were deposited on SiO2/Si wafers for electron mobility measurements using a field effect transistor device, and the annealing temperature (TAnn) was varied from 150 to 350 °C. At TAnn = 200 °C, the electron mobility of the BA-capped In2O3 NC thin film was greater than that of 4ABA-capped In2O3 NCs, while the opposite trend was observed at TAnn = 250 °C. This difference can be attributed, at the lower annealing temperature, to the π-π interaction in the BA-capped In2O3 NC thin film, which is hindered in the ABA-capped In2O3 NC thin film owing to its -NH2 group. At higher annealing temperature, NN bond formation in the ABA-capped In2O3 NC thin film confirmed by Raman spectroscopy plays a key role even after significant thermal decomposition of the ligands in the In2O3 NC thin films. At TAnn = 250 °C, the reorganization energy of BA- or 4ABA-capped In2O3 NCs estimated in the framework of Marcus theory was very similar to each other, indicating that the ligands decompose almost completely, as confirmed by Fourier transform infrared spectroscopy (FT-IR) and thermogravimetric analysis (TGA). The electronic structure was studied by energy-resolved electrochemical impedance spectroscopy (ER-EIS) after annealing the NCs on ITO electrodes at TAnn = 150 °C, 200 °C, or 250 °C. The valence band peak was observed near -6.8 eV for the BA- or 4ABA-capped In2O3 NC films at TAnn =150 °C or 200 °C, but not at TAnn =250 °C. However, for the OA-capped In2O3 NCs, the peak near -6.8 eV was observed for all annealing conditions. Considering the exclusive perseverance of the carboxylate group in the OA-capped In2O3 NCs even at TAnn = 250 °C, as confirmed by FT-IR and TGA, one attributes the peak at -6.8 eV to an electronic state formed by the electronic interaction between the In2O3 NC and the carboxylate groups.
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Affiliation(s)
- Quang Trung Le
- Department of Chemistry, Chonnam National University, Gwangju, 500-757, Republic of Korea.
| | - Hyeok Yun
- Department of Chemistry, Chonnam National University, Gwangju, 500-757, Republic of Korea.
| | - Hyeonbeom Park
- Department of Chemistry, Chonnam National University, Gwangju, 500-757, Republic of Korea.
| | - Hyun-Dam Jeong
- Department of Chemistry, Chonnam National University, Gwangju, 500-757, Republic of Korea.
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Pinheiro A, Ruivo A, Rocha J, Ferro M, Pinto JV, Deuermeier J, Mateus T, Santa A, Mendes MJ, Martins R, Gago S, Laia CAT, Águas H. Parylene-Sealed Perovskite Nanocrystals Down-Shifting Layer for Luminescent Spectral Matching in Thin Film Photovoltaics. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:210. [PMID: 36616119 PMCID: PMC9823874 DOI: 10.3390/nano13010210] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/07/2022] [Revised: 12/28/2022] [Accepted: 12/29/2022] [Indexed: 06/17/2023]
Abstract
The present contribution aims to enhance solar cells' performance via the development of advanced luminescent down-shifting based on encapsulated nanostructured perovskite materials. Here, thin films of inorganic lead halide (CsPbBr3) perovskite nanocrystal luminophores were synthetized, by hot-injection, deposited on glass substrates by spin-coating, and encapsulated with parylene type C, via chemical vapor deposition, to protect and stabilize the films. The optical properties of these thin films were characterized by absorption, emission and 2D contour spectra, their structure by X-ray diffraction and X-ray photoelectron spectroscopy, and the morphology by Scanning Transmission Electron microscopy. I-V curve and spectral response nanocrystalline silicon photovoltaic (nc-Si:H PV) cells were studied in the absence and presence of the perovskite and parylene luminescent down-shifting layers. The incorporation of the CsPbBr3 nanocrystals and their encapsulation with the parylene type C polymeric coating led to an increase in the current generated and the spectral response of the PV cells in the regime of the nanocrystals' fluorescence emission. A 3.1% increase in the short circuit current density and a 5.6% increase in the power conversion efficiency were observed.
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Affiliation(s)
- Ana Pinheiro
- R&D Unit VICARTE—Vidro e Cerâmica para as Artes, NOVA School of Science and Technology, Largo da Torre, 2825-516 Caparica, Portugal
- Associated Laboratory for Green Chemistry (LAQV) of the Network of Chemistry and Technology (REQUIMTE), NOVA School of Sciences and Technology, FCT NOVA, Largo da Torre, 2825-516 Caparica, Portugal
| | - Andreia Ruivo
- R&D Unit VICARTE—Vidro e Cerâmica para as Artes, NOVA School of Science and Technology, Largo da Torre, 2825-516 Caparica, Portugal
| | - João Rocha
- Department of Chemistry, CICECO-Aveiro Institute of Materials, University of Aveiro, 3810-193 Aveiro, Portugal
| | - Marta Ferro
- Department of Materials and Ceramic Engineering, CICECO-Aveiro Institute of Materials, University of Aveiro, 3810-193 Aveiro, Portugal
| | - Joana Vaz Pinto
- CENIMAT|i3N, NOVA School of Sciences and Technology and CEMOP/UNINOVA, FCT NOVA, Largo da Torre, 2825-516 Caparica, Portugal
| | - Jonas Deuermeier
- CENIMAT|i3N, NOVA School of Sciences and Technology and CEMOP/UNINOVA, FCT NOVA, Largo da Torre, 2825-516 Caparica, Portugal
| | - Tiago Mateus
- CENIMAT|i3N, NOVA School of Sciences and Technology and CEMOP/UNINOVA, FCT NOVA, Largo da Torre, 2825-516 Caparica, Portugal
| | - Ana Santa
- CENIMAT|i3N, NOVA School of Sciences and Technology and CEMOP/UNINOVA, FCT NOVA, Largo da Torre, 2825-516 Caparica, Portugal
| | - Manuel J. Mendes
- CENIMAT|i3N, NOVA School of Sciences and Technology and CEMOP/UNINOVA, FCT NOVA, Largo da Torre, 2825-516 Caparica, Portugal
| | - Rodrigo Martins
- CENIMAT|i3N, NOVA School of Sciences and Technology and CEMOP/UNINOVA, FCT NOVA, Largo da Torre, 2825-516 Caparica, Portugal
| | - Sandra Gago
- Associated Laboratory for Green Chemistry (LAQV) of the Network of Chemistry and Technology (REQUIMTE), NOVA School of Sciences and Technology, FCT NOVA, Largo da Torre, 2825-516 Caparica, Portugal
| | - César A. T. Laia
- Associated Laboratory for Green Chemistry (LAQV) of the Network of Chemistry and Technology (REQUIMTE), NOVA School of Sciences and Technology, FCT NOVA, Largo da Torre, 2825-516 Caparica, Portugal
| | - Hugo Águas
- CENIMAT|i3N, NOVA School of Sciences and Technology and CEMOP/UNINOVA, FCT NOVA, Largo da Torre, 2825-516 Caparica, Portugal
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Bera SK, Bera S, Shrivastava M, Pradhan N, Adarsh KV. Facet Engineering for Amplified Spontaneous Emission in Metal Halide Perovskite Nanocrystals. NANO LETTERS 2022; 22:8908-8916. [PMID: 36318695 DOI: 10.1021/acs.nanolett.2c02982] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Auger recombination and thermalization time are detrimental in reducing the gain threshold of optically pumped semiconductor nanocrystal (NC) lasers for future on-chip nanophotonic devices. Here, we report the design strategy of facet engineering to reduce the gain threshold of amplified spontaneous emission by manyfold in NCs of the same concentration and edge length. We achieved this hallmark result by controlling the Auger recombination rates dominated by processes involving NC volume and thermalization time to the emitting states by optimizing the number of facets from 6 (cube) to 12 (rhombic dodecahedron) and 26 (rhombicuboctahedrons) in CsPbBr3 NCs. For instance, we demonstrate a 2-fold reduction in Auger recombination rates and thermalization time with increased number of facets. The gain threshold can be further reduced ∼50% by decreasing the sample temperature to 4 K. Our systematic studies offer a new method to reduce the gain threshold that ultimately forms the basis of nanolasers.
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Affiliation(s)
- Santu K Bera
- Department of Physics, Indian Institute of Science Education and Research, Bhopal462066, India
| | - Suman Bera
- School of Materials Sciences, Indian Association for the Cultivation of Science, Kolkata700032, India
| | - Megha Shrivastava
- Department of Physics, Indian Institute of Science Education and Research, Bhopal462066, India
| | - Narayan Pradhan
- School of Materials Sciences, Indian Association for the Cultivation of Science, Kolkata700032, India
| | - K V Adarsh
- Department of Physics, Indian Institute of Science Education and Research, Bhopal462066, India
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