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Xu W, Zhang Z, Zhou C, Zhu D. Universal Way to Enhance Solution-Processed High-κ Oxide Dielectrics Performance by Sulfate Incorporation. ACS APPLIED MATERIALS & INTERFACES 2024; 16:8960-8973. [PMID: 38329839 DOI: 10.1021/acsami.3c13977] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/10/2024]
Abstract
Vacuum-free, solution-processable high-κ-oxide dielectrics are considered to be a key element for emerging low-cost flexible electronics. However, they usually suffer from low breakdown strength and frequency-dependent capacitance, which limit their broader applications. Here, we report a universal way to improve solution-based high-κ oxide dielectric properties (e.g., Al2O3, ZrO2, Ga2O3, Sc2O3, Ho2O3, and Sm2O3) by sulfate incorporation. In-depth characterization shows that sulfate incorporation could reduce hydrogen and oxygen vacancy-related defects in high-κ oxides, thereby improving the dielectric performance. The optimized S-doped high-κ oxides show smooth surface (rms < 0.20 nm), low leakage current (∼10-7 A/cm2@4 MV/cm), excellent dielectric breakdown strength (>10 MV/cm), and stable capacitance-frequency characteristics. Besides, oxide thin-film transistors based on these high-κ dielectrics exhibit excellent performance (e.g., mobility >20 cm2 V-1 s-1, on/off ratio of ∼107, threshold swing of ∼0.14 V dec-1, threshold voltage of ∼0 V, and hysteresis of ∼0.02 V). Thus, this work provides a general approach for the development of high-quality solution-based high-κ oxides for transistor circuitry.
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Affiliation(s)
- Wangying Xu
- Department of Physics, School of Science, Jimei University, Xiamen 361021, China
| | - Zihao Zhang
- College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, China
| | - Changjie Zhou
- Department of Physics, School of Science, Jimei University, Xiamen 361021, China
| | - Deliang Zhu
- College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, China
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Xu W, Peng T, Zhou C, Zhu D. Boronization: A General Strategy for Rare Earth Oxides with Enhanced High-κ Gate Dielectric Performance. ACS APPLIED MATERIALS & INTERFACES 2023; 15:53725-53737. [PMID: 37990903 DOI: 10.1021/acsami.3c12891] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/23/2023]
Abstract
Rare earth oxides (REOs) can be used as high-κ gate dielectrics that are at the core of electronic devices. However, a bottleneck remains with regard to obtaining high-performance REO dielectrics due to the serious hygroscopic issue and high defect states. Here, a general boronization strategy is reported to enhance the high-κ REO gate dielectric performance. Complementary characterization reveals that boronization is capable of reducing oxygen vacancies/hydroxyl defects in REOs and suppressing moisture absorption, leading to the improvement of leakage current, breakdown strength (up to 9 MV/cm), and capacitance-frequency stability. Furthermore, oxide transistors based on boronized REO dielectrics demonstrate state-of-the-art device characteristics with a high mobility of 40 cm2/V s, a current on/off ratio of 108, a subthreshold swing of 82 mV/dec, a hysteresis of 0.05 V, and superior bias stress stability.
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Affiliation(s)
- Wangying Xu
- Department of Physics, School of Science, Jimei University, Xiamen 361021, China
| | - Tao Peng
- College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, China
| | - Changjie Zhou
- Department of Physics, School of Science, Jimei University, Xiamen 361021, China
| | - Deliang Zhu
- College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, China
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Chang Y, Bukke RN, Bae J, Jang J. Low-Temperature Solution-Processed HfZrO Gate Insulator for High-Performance of Flexible LaZnO Thin-Film Transistor. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2410. [PMID: 37686917 PMCID: PMC10489735 DOI: 10.3390/nano13172410] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/05/2023] [Revised: 08/01/2023] [Accepted: 08/16/2023] [Indexed: 09/10/2023]
Abstract
Metal-oxide-semiconductor (MOS)-based thin-film transistors (TFTs) are gaining significant attention in the field of flexible electronics due to their desirable electrical properties, such as high field-effect mobility (μFE), lower IOFF, and excellent stability under bias stress. TFTs have widespread applications, such as printed electronics, flexible displays, smart cards, image sensors, virtual reality (VR) and augmented reality (AR), and the Internet of Things (IoT) devices. In this study, we approach using a low-temperature solution-processed hafnium zirconium oxide (HfZrOx) gate insulator (GI) to improve the performance of lanthanum zinc oxide (LaZnO) TFTs. For the optimization of HfZrO GI, HfZrO films were annealed at 200, 250, and 300 °C. The optimized HfZrO-250 °C GI-based LaZnO TFT shows the μFE of 19.06 cm2V-1s-1, threshold voltage (VTH) of 1.98 V, hysteresis voltage (VH) of 0 V, subthreshold swing (SS) of 256 mV/dec, and ION/IOFF of ~108. The flexible LaZnO TFT with HfZrO-250 °C GI exhibits negligible ΔVTH of 0.25 V under positive-bias-temperature stress (PBTS). The flexible hysteresis-free LaZnO TFTs with HfZrO-250 °C can be widely used for flexible electronics. These enhancements were attributed to the smooth surface morphology and reduced defect density achieved with the HfZrO gate insulator. Therefore, the HfZrO/LaZnO approach holds great promise for next-generation MOS TFTs for flexible electronics.
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Affiliation(s)
- Yeoungjin Chang
- Advanced Display Research Center, Department of Information Display, Kyung Hee University, Seoul 02447, Republic of Korea; (Y.C.); (J.B.)
- Department of Semiconductor Display, Gachon University, Seongnam-si 13120, Republic of Korea
| | - Ravindra Naik Bukke
- School of Mechanical & Materials Engineering, Indian Institute of Technology Mandi, Mandi Pradesh 175075, India
| | - Jinbaek Bae
- Advanced Display Research Center, Department of Information Display, Kyung Hee University, Seoul 02447, Republic of Korea; (Y.C.); (J.B.)
| | - Jin Jang
- Advanced Display Research Center, Department of Information Display, Kyung Hee University, Seoul 02447, Republic of Korea; (Y.C.); (J.B.)
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Alam F, He G, Yan J, Wang W. All-Water-Driven High-k HfO 2 Gate Dielectrics and Applications in Thin Film Transistors. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:694. [PMID: 36839062 PMCID: PMC9966958 DOI: 10.3390/nano13040694] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/19/2023] [Revised: 02/05/2023] [Accepted: 02/07/2023] [Indexed: 06/18/2023]
Abstract
In this article, we used a simple, non-toxic, environmentally friendly, water-driven route to fabricate the gate dielectric on the Si substrate and successfully integrate the In2O3/HfO2 thin film transistor (TFT). All the electrical properties of In2O3 based on HfO2 were systematically analyzed. The In2O3/HfO2 device exhibits the best electrical performance at an optimized annealing temperature of 500 °C, including a high µFE of 9 cm2 V-1 s-1, a high ION/IOFF of 105, a low threshold voltage of 1.1 V, and a low sub-threshold of 0.31 V dec-1. Finally, test the stability of the bias under positive bias stress (PBS) and negative bias stress (NBS) with threshold shifts (VTH) of 0.35 and 0.13 V while these optimized properties are achieved at a small operating voltage of 2 V. All experimental results demonstrate the potential application of aqueous solution technology for future low-cost, energy-efficient, large-scale, and high-performance electronics.
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Xu X, He G, Jiang S, Wang L, Wang W, Liu Y, Gao Q. High performance enhancement-mode thin-film transistor with graphene quantum dot-decorated In 2O 3 channel layers. RSC Adv 2022; 12:14986-14997. [PMID: 35702432 PMCID: PMC9115870 DOI: 10.1039/d2ra01051h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/17/2022] [Accepted: 05/11/2022] [Indexed: 11/21/2022] Open
Abstract
Due to the quantum confinement and edge effects, there has been ongoing enthusiasm to provide deep insight into graphene quantum dots (GQDs), serving as attractive semiconductor materials. To demonstrate the potential applications of GQDs in electronic devices, this work presents solution-processed high performance GQD-decorated In2O3 thin-film transistors (TFTs) based on ZrO2 as gate dielectrics. GQDs-In2O3/ZrO2 TFTs with optimized doping content have demonstrated high electrical performance and low operating voltage, including a larger field-effect mobility (μFE) of 34.02 cm2 V−1 s−1, a higher Ion/Ioff of 4.55 × 107, a smaller subthreshold swing (SS) of 0.08 V dec−1, a lower interfacial trap states (Dit) of 5.84 × 1011 cm−2 and threshold voltage shift of 0.07 V and 0.12 V under positive bias stress (PBS) and negative bias stress (NBS) for 3600 s, respectively. As a demonstration of complex logic applications, a resistor-loaded unipolar inverter based on GQDs-In2O3/ZrO2 has been built, demonstrating full swing characteristic and high gain of 10.63. Low-frequency noise (LFN) characteristics of GQDs-In2O3/ZrO2 TFTs have been presented and it was concluded that the noise source can be attributed to the fluctuations in mobility. As a result, it can be concluded that solution-derived GDQ-optimized oxide-based TFTs will manifest potential applications in electronic devices. Due to the quantum confinement and edge effects, there has been ongoing enthusiasm to provide deep insight into graphene quantum dots (GQDs), serving as attractive semiconductor materials.![]()
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Affiliation(s)
- Xiaofen Xu
- School of Materials Science and Engineering, Anhui University Hefei 230601 China
| | - Gang He
- School of Materials Science and Engineering, Anhui University Hefei 230601 China
| | - Shanshan Jiang
- School of Integration Circuits, Anhui University Hefei 230601 China
| | - Leini Wang
- School of Materials Science and Engineering, Anhui University Hefei 230601 China
| | - Wenhao Wang
- School of Materials Science and Engineering, Anhui University Hefei 230601 China
| | - Yanmei Liu
- School of Materials Science and Engineering, Anhui University Hefei 230601 China
| | - Qian Gao
- School of Materials Science and Engineering, Anhui University Hefei 230601 China
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Bias Stress Stability of Solution-Processed Nano Indium Oxide Thin Film Transistor. MICROMACHINES 2021; 12:mi12020111. [PMID: 33499221 PMCID: PMC7911419 DOI: 10.3390/mi12020111] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/28/2020] [Revised: 01/18/2021] [Accepted: 01/19/2021] [Indexed: 11/16/2022]
Abstract
In this paper, the effects of annealing temperature and other process parameters on spin-coated indium oxide thin film transistors (In2O3-TFTs) were studied. The research shows that plasma pretreatment of glass substrate can improve the hydrophilicity of glass substrate and stability of the spin-coating process. With Fourier transform infrared (FT-IR) and X-ray diffraction (XRD) analysis, it is found that In2O3 thin films prepared by the spin coating method are amorphous, and have little organic residue when the annealing temperature ranges from 200 to 300 °C. After optimizing process conditions with the spin-coated rotating speed of 4000 rpm and the annealing temperature of 275 °C, the performance of In2O3-TFTs is best (average mobility of 1.288 cm2·V−1·s−1, Ion/Ioff of 5.93 × 106, and SS of 0.84 V·dec−1). Finally, the stability of In2O3-TFTs prepared at different annealing temperatures was analyzed by energy band theory, and we identified that the elimination of residual hydroxyl groups was the key influencing factor. Our results provide a useful reference for high-performance metal oxide semiconductor TFTs prepared by the solution method.
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Kim HJ, Jung J, Kim HJ. Enhancement of electrical characteristics and stability of self-patterned In-Zn-O thin-film transistors based on photosensitive precursors. Sci Rep 2020; 10:18853. [PMID: 33139796 PMCID: PMC7606435 DOI: 10.1038/s41598-020-76080-8] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/30/2020] [Accepted: 10/19/2020] [Indexed: 11/09/2022] Open
Abstract
We report a novel self-patterning method for solution-processed indium zinc oxide (IZO) thin films based on photosensitive precursors. This approach is an alternative and evolutionary approach to the traditional photoresist patterning techniques. Chelate bonds between metal ions and β-diketone compounds in ultraviolet light-exposed IZO solutions provided intrinsic photosensitivity, which resulted in a solubility difference between exposed and non-exposed regions. This difference enabled self-patterning of the IZO for thin-film transistor (TFT) fabrication. Compared with previously reported self-patterning methods based on photosensitive activators, our self-patterned IZO TFTs based on photosensitive precursors displayed excellent electrical characteristics and stability. The field-effect mobility increased from 0.27 to 0.99 cm2/Vs, the subthreshold swing decreased from 0.54 to 0.46 V/dec, and the threshold voltage shift under a positive bias stress test (1,000 s) improved from 9.32 to 1.68 V. The photosensitive precursor played a key role in these improvements permitting fewer organic species which act as defect sites after metal oxide formation. Consequently, our approach compares favorably with that of conventional fabrication process using photoresist in terms of its simplicity, cost efficiency, and electrical performance.
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Affiliation(s)
- Hee Jun Kim
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Joohye Jung
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea.,Display R&D Center, Samsung Display Co., Ltd, 181 Samsung-ro, Tangjeong-myeon, Asan-si, Chungcheongnam-do, 31454, Republic of Korea
| | - Hyun Jae Kim
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea.
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Bukke RN, Saha JK, Mude NN, Kim Y, Lee S, Jang J. Lanthanum Doping in Zinc Oxide for Highly Reliable Thin-Film Transistors on Flexible Substrates by Spray Pyrolysis. ACS APPLIED MATERIALS & INTERFACES 2020; 12:35164-35174. [PMID: 32657115 DOI: 10.1021/acsami.0c05151] [Citation(s) in RCA: 12] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Solution-processed metal-oxide thin-film transistors (TFTs) are considered as one of the most favorable devices for next-generation, large-area flexible electronics. In this paper, we demonstrate the excellent material properties of lanthanum-zinc oxide (LaZnO) thin films deposited by spray pyrolysis and their application to TFTs. The threshold voltage of the LaZnO TFTs shifts toward positive gate voltage, and the mobility decreases with increasing lanthanum ratio in ZnO from 0 to 20%. The purification of the LaZnO precursor (P-LaZnO) further improves the device performance. The P-LaZnO TFT exhibits a field-effect mobility of 22.43 cm2 V-1 s-1, zero hysteresis voltage, and negligible threshold voltage VTH shift under positive bias temperature stress. The enhancement in the electrical properties is due to a decrease in grain size, smooth surface roughness, and reduction in the trap density in the LaZnO film. X-ray photoelectron spectroscopy (XPS) results confirm the presence of La in the TFT channel and at/near the interface of the LaZnO and ZrOx gate insulator, leading to fewer interfacial traps. The flexible P-LaZnO TFT fabricated on the polyimide substrate exhibits a mobility of 17.64 cm2 V-1 s-1 and a negligible VTH shift under bias stress. Also, the inverter made of LZO TFTs is working well with a voltage gain of 17.74 (V/V) at 4 V. Therefore, the LaZnO TFT is a promising device for next-generation flexible displays.
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Affiliation(s)
- Ravindra Naik Bukke
- Advanced Display Research Center (ADRC), Department of Information Display, Kyung Hee University, 26, Kyungheedae-ro, Dongdaemun-gu, Seoul 02447, Korea
| | - Jewel Kumer Saha
- Advanced Display Research Center (ADRC), Department of Information Display, Kyung Hee University, 26, Kyungheedae-ro, Dongdaemun-gu, Seoul 02447, Korea
| | - Narendra Naik Mude
- Advanced Display Research Center (ADRC), Department of Information Display, Kyung Hee University, 26, Kyungheedae-ro, Dongdaemun-gu, Seoul 02447, Korea
| | - Youngoo Kim
- Advanced Display Research Center (ADRC), Department of Information Display, Kyung Hee University, 26, Kyungheedae-ro, Dongdaemun-gu, Seoul 02447, Korea
| | - Suhui Lee
- Advanced Display Research Center (ADRC), Department of Information Display, Kyung Hee University, 26, Kyungheedae-ro, Dongdaemun-gu, Seoul 02447, Korea
| | - Jin Jang
- Advanced Display Research Center (ADRC), Department of Information Display, Kyung Hee University, 26, Kyungheedae-ro, Dongdaemun-gu, Seoul 02447, Korea
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9
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Effect of Zirconium Doping on Electrical Properties of Aluminum Oxide Dielectric Layer by Spin Coating Method with Low Temperature Preparation. COATINGS 2020. [DOI: 10.3390/coatings10070620] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
In recent years, significant efforts have been devoted to the research and development of spin-coated Al2O3 thin films, due to their large band gaps, high breakdown voltage and stability at high annealing temperature. However, as the alumina precursor has a large surface energy, substrates need to be treated by plasma before spin coating. Therefore, to avoid the expensive and process-complicated plasma treatment, we incorporated zirconium nitrate into the aluminum nitrate solution to decrease the surface energy of the precursor which improve the spreadability. Then, the electrical performances and the surface morphologies of the films were measured. For comparison, the pure Al2O3 films with plasma treatments were also prepared. As a result, after low temperature annealing (200 °C), the relative dielectric constant of Zr–AlOx spin-coated thin-film MIM (Metal-Insulator-Metal) devices can reach 12 and the leakage current density is not higher than 7.78 × 10−8 A/cm2 @ 1 MV/cm when the concentration of zirconium nitrate is 0.05 mol/L. The Aluminum oxide film prepared by zirconium doping has higher stability and better electrical properties than the pure films with plasma treatments and high performance can be attained under low-temperature annealing, which shows its potential application in printing and flexible electronic devices.
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Kang YH, Min BK, Kim SK, Bae G, Song W, Lee C, Cho SY, An KS. Proton Conducting Perhydropolysilazane-Derived Gate Dielectric for Solution-Processed Metal Oxide-Based Thin-Film Transistors. ACS APPLIED MATERIALS & INTERFACES 2020; 12:15396-15405. [PMID: 32148019 DOI: 10.1021/acsami.0c01274] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Perhydropolysilazane (PHPS), an inorganic polymer composed of Si-N and Si-H, has attracted much attention as a precursor for gate dielectrics of thin-film transistors (TFTs) due to its facile processing even at a relatively low temperature. However, an in-depth understanding of the tunable dielectric behavior of PHPS-derived dielectrics and their effects on TFT device performance is still lacking. In this study, the PHPS-derived dielectric films formed at different annealing temperatures have been used as the gate dielectric layer for solution-processed indium zinc oxide (IZO) TFTs. Notably, the IZO TFTs fabricated on PHPS annealed at 350 °C exhibit mobility as high as 118 cm2 V-1 s-1, which is about 50 times the IZO TFTs made on typical SiO2 dielectrics. The outstanding electrical performance is possible because of the exceptional capacitance of PHPS-derived dielectric caused by the limited hydrolysis reaction of PHPS at a low processing temperature (<400 °C). According to our analysis, the exceptional dielectric behavior is originated from the electric double layer formed by mobile of protons in the low temperature-annealed PHPS dielectrics. Furthermore, proton conduction through the PHPS dielectric occurs through a three-dimensional pathway by a hopping mechanism, which allows uniform polarization of the dielectric even at room temperature, leading to amplified performance of the IZO TFTs.
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Affiliation(s)
- Young Hun Kang
- Division of Advanced Materials, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon 34114, Republic of Korea
| | - Bok Ki Min
- Division of Advanced Materials, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon 34114, Republic of Korea
- Graphene Research Team, ICT Creative Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), 218 Gajeong-ro, Yuseong-gu, Daejeon 34129, Republic of Korea
| | - Seong K Kim
- Division of Advanced Materials, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon 34114, Republic of Korea
- Department of Advanced Materials and Chemical Engineering, Hannam University, Daejeon 34430, Republic of Korea
| | - Garam Bae
- Division of Advanced Materials, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon 34114, Republic of Korea
| | - Wooseok Song
- Division of Advanced Materials, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon 34114, Republic of Korea
| | - Changjin Lee
- Division of Advanced Materials, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon 34114, Republic of Korea
| | - Song Yun Cho
- Division of Advanced Materials, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon 34114, Republic of Korea
| | - Ki-Seok An
- Division of Advanced Materials, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon 34114, Republic of Korea
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Zhu Y, Liu G, Xin Z, Fu C, Wan Q, Shan F. Solution-Processed, Electrolyte-Gated In 2O 3 Flexible Synaptic Transistors for Brain-Inspired Neuromorphic Applications. ACS APPLIED MATERIALS & INTERFACES 2020; 12:1061-1068. [PMID: 31820620 DOI: 10.1021/acsami.9b18605] [Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
Emulating the essential synaptic behaviors using single synaptic transistor has attracted extensive attention for building the brain-inspired neuromorphic systems. However, few reports on synaptic transistors fabricated by solution processes have been reported. In this article, the indium oxide synaptic transistors based on polyimide substrates were fabricated by a nontoxic water-inducement method at a low temperature, and lithium perchlorate (LiClO4) was dissolved in polyethylene oxide as the gate electrolyte. For water-inducement process, comparable electrical properties of the synaptic transistors can be achieved by prolonging the annealing time rather than high-temperature annealing with a relatively short time. The effect of the annealing time on the electrical performance of the electrolyte-gated transistors annealed at various temperatures was investigated. It is found that the electrolyte-gated-synaptic transistor on polyimide substrate annealed at 200 °C exhibits high electrical performance and good mechanical stability. Due to the ion migration relaxation dynamics in the polymer electrolyte, various important synaptic behaviors such as the excitatory postsynaptic current, paired-pulse facilitation, high-pass filtering characteristics, and long-term memory performance were successfully mimicked. The electrolyte-gated synaptic transistors based on solution-processed In2O3 exhibit great potential in neuromorphological applications.
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Affiliation(s)
| | | | - Zhijie Xin
- Collaborative Innovation Center for Eco-Textiles of Shandong Province , Qingdao 266071 , China
| | - Chuanyu Fu
- Collaborative Innovation Center for Eco-Textiles of Shandong Province , Qingdao 266071 , China
| | - Qing Wan
- College of Electronic Science & Engineering , Nanjing University , Nanjing 210093 , China
| | - Fukai Shan
- Collaborative Innovation Center for Eco-Textiles of Shandong Province , Qingdao 266071 , China
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12
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Park J, Cho NK, Lee SE, Lee EG, Lee J, Im C, Na HJ, Kim YS. Atmospheric-pressure plasma treatment toward high-quality solution-processed aluminum oxide gate dielectric films in thin-film transistors. NANOTECHNOLOGY 2019; 30:495702. [PMID: 31476746 DOI: 10.1088/1361-6528/ab4073] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
We present an atmospheric-pressure plasma (APP) treatment technique to improve the electrical performance of solution-processed dielectric films. This technique can successfully reduce leakage current and frequency dependence of solution-processed dielectric films. The APP treatment contributes to the conversion of metal hydroxide to metal oxide, and in the case of a solution-treated AlO x dielectric thin film, it effectively ascribes to the formation of high-quality AlO x dielectric thin films. The capacitance of the untreated AlO x dielectric thin film varies up to 9.9% with frequency change, but the capacitance of the APP treated AlO x dielectric thin film varies within 1.5%. When the solution-processed InO x thin-film transistors (TFTs) were fabricated using these dielectric films, the field-effect mobility of TFTs with the APP-treated AlO x dielectric film was increased significantly from 9.77 to 26.79 cm2 V-1 s-1 in comparison to that of TFTs with the untreated AlO x dielectric film. We also have confirmed that these results are similar to the properties of the sample prepared at high annealing temperature including electrical performance, conduction mechanism and chemical structure. The APP treatment technique provides a new opportunity to effectively improve the electrical performance of solution-processed dielectrics in the atmosphere at low temperature.
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Affiliation(s)
- Jintaek Park
- Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 08826, Republic of Korea. Samsung Display Company, Ltd, 181 Samsung-ro, Tangjeong-myeon, Asan-si, Chungcheongnam-Do, Republic of Korea
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13
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He G, Li W, Sun Z, Zhang M, Chen X. Potential solution-induced HfAlO dielectrics and their applications in low-voltage-operating transistors and high-gain inverters. RSC Adv 2018; 8:36584-36595. [PMID: 35558955 PMCID: PMC9088822 DOI: 10.1039/c8ra07813k] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/20/2018] [Accepted: 10/10/2018] [Indexed: 11/21/2022] Open
Abstract
Recently, much attention has been paid to the investigation of solution-driven oxides for application in thin film transistors (TFTs). In current study, a fully solution-based method, using 2-methoxyethanol as solvent, has been adopted to prepare InZnO thin films and HfAlO x gate dielectrics. Amorphous HfAlO x thin films annealed at 600 °C have shown a high transparency (>85%), low leakage current density (6.9 × 10-9 A cm-2 at 2 MV cm-1), and smooth surface. To verify the potential applications of HfAlO x gate dielectrics in oxide-based TFTs, fully solution-induced InZnO/HfAlO x TFTs have been integrated. Excellent electrical performance for InZnO/HfAlO x TFTs annealed at 450 °C has been observed, including a low operating voltage of 3 V, a saturated mobility of 5.17 cm2 V-1 s-1, a high I on/I off of ∼106, a small subthreshold swing of 87 mV per decade, and a threshold voltage shift of 0.52 V under positive bias stress (PBS) for 7200 s, respectively. In addition, time dependent threshold voltage shift under PBS could be described by a stretched-exponential model, which can be due to charge trapping in the semiconductor/dielectric interface. Finally, to explore the possible application in logic operation, a resistor-loaded inverter based on InZnO/HfAlO x TFTs has been built and excellent swing characteristic and well dynamic behavior have been obtained. Therefore, it can be concluded that fully solution-driven InZnO/HfAlO x TFTs have demonstrated potential application in nontoxic, eco-friendly and low-power consumption oxide-based flexible electronics.
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Affiliation(s)
- Gang He
- School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University Hefei 230601 P. R. China .,Institute of Physical Science and Information Technology, Anhui University Hefei 230601 P. R. China
| | - Wendong Li
- School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University Hefei 230601 P. R. China
| | - Zhaoqi Sun
- School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University Hefei 230601 P. R. China
| | - Miao Zhang
- School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University Hefei 230601 P. R. China
| | - Xiaoshuang Chen
- National Laboratory for Infrared Physics, Chinese Academy of Sciences, Shanghai Institute of Technical Physics 500 Yutian Road Shanghai 200083 P. R. China
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14
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Zhang X, Wang B, Huang W, Chen Y, Wang G, Zeng L, Zhu W, Bedzyk MJ, Zhang W, Medvedeva JE, Facchetti A, Marks TJ. Synergistic Boron Doping of Semiconductor and Dielectric Layers for High-Performance Metal Oxide Transistors: Interplay of Experiment and Theory. J Am Chem Soc 2018; 140:12501-12510. [DOI: 10.1021/jacs.8b06395] [Citation(s) in RCA: 34] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/30/2022]
Affiliation(s)
- Xinan Zhang
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States
- School of Physics and Electronics, Key Laboratory of Photovoltaic Materials, Henan University, Kaifeng, 475004, PR China
| | - Binghao Wang
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States
| | - Wei Huang
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States
| | - Yao Chen
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States
| | - Gang Wang
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States
| | - Li Zeng
- Applied Physics Program, Department of Materials Science and Engineering, and the Materials Research Center, Northwestern University, 2220 Campus Drive, Evanston, Illinois 60208, United States
| | - Weigang Zhu
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States
| | - Michael J. Bedzyk
- Applied Physics Program, Department of Materials Science and Engineering, and the Materials Research Center, Northwestern University, 2220 Campus Drive, Evanston, Illinois 60208, United States
| | - Weifeng Zhang
- School of Physics and Electronics, Key Laboratory of Photovoltaic Materials, Henan University, Kaifeng, 475004, PR China
| | - Julia E. Medvedeva
- Department of Physics, Missouri University of Science and Technology, Rolla, Missouri 65409, United States
| | - Antonio Facchetti
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States
| | - Tobin J. Marks
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States
- Applied Physics Program, Department of Materials Science and Engineering, and the Materials Research Center, Northwestern University, 2220 Campus Drive, Evanston, Illinois 60208, United States
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15
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Garlapati SK, Divya M, Breitung B, Kruk R, Hahn H, Dasgupta S. Printed Electronics Based on Inorganic Semiconductors: From Processes and Materials to Devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1707600. [PMID: 29952112 DOI: 10.1002/adma.201707600] [Citation(s) in RCA: 28] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/29/2017] [Revised: 03/20/2018] [Indexed: 06/08/2023]
Abstract
Following the ever-expanding technological demands, printed electronics has shown palpable potential to create new and commercially viable technologies that will benefit from its unique characteristics, such as, large-area and wide range of substrate compatibility, conformability and low-cost. Through the last few decades, printed/solution-processed field-effect transistors (FETs) and circuits have witnessed immense research efforts, technological growth and increased commercial interests. Although printing of functional inks comprising organic semiconductors has already been initiated in early 1990s, gradually the attention, at least partially, has been shifted to various forms of inorganic semiconductors, starting from metal chalcogenides, oxides, carbon nanotubes and very recently to graphene and other 2D semiconductors. In this review, the entire domain of printable inorganic semiconductors is considered. In fact, thanks to the continuous development of materials/functional inks and novel design/printing strategies, the inorganic printed semiconductor-based circuits today have reached an operation frequency up to several hundreds of kilohertz with only a few nanosecond time delays at the individual FET/inverter levels; in this regard, often circuits based on hybrid material systems have been found to be advantageous. At the end, a comparison of relative successes of various printable inorganic semiconductor materials, the remaining challenges and the available future opportunities are summarized.
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Affiliation(s)
- Suresh Kumar Garlapati
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), D-76344, Eggenstein-Leopoldshafen, Germany
| | - Mitta Divya
- Department of Materials Engineering, Indian Institute of Science, Bangalore, 560012, India
| | - Ben Breitung
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), D-76344, Eggenstein-Leopoldshafen, Germany
| | - Robert Kruk
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), D-76344, Eggenstein-Leopoldshafen, Germany
| | - Horst Hahn
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), D-76344, Eggenstein-Leopoldshafen, Germany
- KIT-TUD Joint Research Laboratory Nanomaterials, Technische Universität Darmstadt (TUD), Institute of Materials Science, Jovanka-Bontschits-Str. 2, ,64287, Darmstadt, Germany
| | - Subho Dasgupta
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), D-76344, Eggenstein-Leopoldshafen, Germany
- Department of Materials Engineering, Indian Institute of Science, Bangalore, 560012, India
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16
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Liu A, Zhu H, Sun H, Xu Y, Noh YY. Solution Processed Metal Oxide High-κ Dielectrics for Emerging Transistors and Circuits. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1706364. [PMID: 29904984 DOI: 10.1002/adma.201706364] [Citation(s) in RCA: 43] [Impact Index Per Article: 7.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/02/2017] [Revised: 03/07/2018] [Indexed: 06/08/2023]
Abstract
The electronic functionalities of metal oxides comprise conductors, semiconductors, and insulators. Metal oxides have attracted great interest for construction of large-area electronics, particularly thin-film transistors (TFTs), for their high optical transparency, excellent chemical and thermal stability, and mechanical tolerance. High-permittivity (κ) oxide dielectrics are a key component for achieving low-voltage and high-performance TFTs. With the expanding integration of complementary metal oxide semiconductor transistors, the replacement of SiO2 with high-κ oxide dielectrics has become urgently required, because their provided thicker layers suppress quantum mechanical tunneling. Toward low-cost devices, tremendous efforts have been devoted to vacuum-free, solution processable fabrication, such as spin coating, spray pyrolysis, and printing techniques. This review focuses on recent progress in solution processed high-κ oxide dielectrics and their applications to emerging TFTs. First, the history, basics, theories, and leakage current mechanisms of high-κ oxide dielectrics are presented, and the underlying mechanism for mobility enhancement over conventional SiO2 is outlined. Recent achievements of solution-processed high-κ oxide materials and their applications in TFTs are summarized and traditional coating methods and emerging printing techniques are introduced. Finally, low temperature approaches, e.g., ecofriendly water-induced, self-combustion reaction, and energy-assisted post treatments, for the realization of flexible electronics and circuits are discussed.
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Affiliation(s)
- Ao Liu
- Department of Energy and Materials Engineering, Dongguk University, 30 Pildong-ro, 1-gil, Jung-gu, Seoul, 04620, Republic of Korea
| | - Huihui Zhu
- Department of Energy and Materials Engineering, Dongguk University, 30 Pildong-ro, 1-gil, Jung-gu, Seoul, 04620, Republic of Korea
| | - Huabin Sun
- Department of Energy and Materials Engineering, Dongguk University, 30 Pildong-ro, 1-gil, Jung-gu, Seoul, 04620, Republic of Korea
| | - Yong Xu
- Department of Energy and Materials Engineering, Dongguk University, 30 Pildong-ro, 1-gil, Jung-gu, Seoul, 04620, Republic of Korea
| | - Yong-Young Noh
- Department of Energy and Materials Engineering, Dongguk University, 30 Pildong-ro, 1-gil, Jung-gu, Seoul, 04620, Republic of Korea
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17
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Wang B, Huang W, Chi L, Al-Hashimi M, Marks TJ, Facchetti A. High- k Gate Dielectrics for Emerging Flexible and Stretchable Electronics. Chem Rev 2018; 118:5690-5754. [PMID: 29785854 DOI: 10.1021/acs.chemrev.8b00045] [Citation(s) in RCA: 178] [Impact Index Per Article: 29.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/04/2023]
Abstract
Recent advances in flexible and stretchable electronics (FSE), a technology diverging from the conventional rigid silicon technology, have stimulated fundamental scientific and technological research efforts. FSE aims at enabling disruptive applications such as flexible displays, wearable sensors, printed RFID tags on packaging, electronics on skin/organs, and Internet-of-things as well as possibly reducing the cost of electronic device fabrication. Thus, the key materials components of electronics, the semiconductor, the dielectric, and the conductor as well as the passive (substrate, planarization, passivation, and encapsulation layers) must exhibit electrical performance and mechanical properties compatible with FSE components and products. In this review, we summarize and analyze recent advances in materials concepts as well as in thin-film fabrication techniques for high- k (or high-capacitance) gate dielectrics when integrated with FSE-compatible semiconductors such as organics, metal oxides, quantum dot arrays, carbon nanotubes, graphene, and other 2D semiconductors. Since thin-film transistors (TFTs) are the key enablers of FSE devices, we discuss TFT structures and operation mechanisms after a discussion on the needs and general requirements of gate dielectrics. Also, the advantages of high- k dielectrics over low- k ones in TFT applications were elaborated. Next, after presenting the design and properties of high- k polymers and inorganic, electrolyte, and hybrid dielectric families, we focus on the most important fabrication methodologies for their deposition as TFT gate dielectric thin films. Furthermore, we provide a detailed summary of recent progress in performance of FSE TFTs based on these high- k dielectrics, focusing primarily on emerging semiconductor types. Finally, we conclude with an outlook and challenges section.
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Affiliation(s)
- Binghao Wang
- Department of Chemistry and the Materials Research Center , Northwestern University , 2145 Sheridan Road , Evanston , Illinois 60208 , United States.,Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices , Soochow University , 199 Ren'ai Road , Suzhou 215123 , China
| | - Wei Huang
- Department of Chemistry and the Materials Research Center , Northwestern University , 2145 Sheridan Road , Evanston , Illinois 60208 , United States
| | - Lifeng Chi
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices , Soochow University , 199 Ren'ai Road , Suzhou 215123 , China
| | - Mohammed Al-Hashimi
- Department of Chemistry , Texas A&M University at Qatar , PO Box 23874, Doha , Qatar
| | - Tobin J Marks
- Department of Chemistry and the Materials Research Center , Northwestern University , 2145 Sheridan Road , Evanston , Illinois 60208 , United States
| | - Antonio Facchetti
- Department of Chemistry and the Materials Research Center , Northwestern University , 2145 Sheridan Road , Evanston , Illinois 60208 , United States.,Flexterra Corporation , 8025 Lamon Avenue , Skokie , Illinois 60077 , United States
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18
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Jo JW, Kim YH, Park J, Heo JS, Hwang S, Lee WJ, Yoon MH, Kim MG, Park SK. Ultralow-Temperature Solution-Processed Aluminum Oxide Dielectrics via Local Structure Control of Nanoclusters. ACS APPLIED MATERIALS & INTERFACES 2017; 9:35114-35124. [PMID: 28920434 DOI: 10.1021/acsami.7b09523] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Oxide dielectric materials play a key role in a wide range of high-performance solid-state electronics from semiconductor devices to emerging wearable and soft bioelectronic devices. Although several previous advances are noteworthy, their typical processing temperature still far exceeds the thermal limitations of soft materials, impeding their wide utilization in these emerging fields. Here, we report an innovative route to form highly reliable aluminum oxide dielectric films using an ultralow-temperature (<60 °C) solution process with a class of oxide nanocluster precursors. The extremely low-temperature synthesis of oxide dielectric films was achieved by using low-impurity, bulky metal-oxo-hydroxy nanoclusters combined with a spatially controllable and highly energetic light activation process. It was noteworthy that the room-temperature light activation process was highly effective in dissociating the metal-oxo-hydroxy clusters, enabling the formation of a dense atomic network at low temperature. The ultralow-temperature solution-processed oxide dielectrics demonstrated high breakdown field (>6 MV cm-1), low leakage (∼1 × 10-8 A cm-2 at 2 MV cm-1), and excellent electrical stability comparable to those of vacuum-deposited and high-temperature-processed dielectric films. For potential applications of the oxide dielectrics, transparent metal oxides and carbon nanotube active devices as well as integrated circuits were implemented directly on both ultrathin polymeric and highly stretchable substrates.
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Affiliation(s)
| | - Yong-Hoon Kim
- SKKU Advanced Institute of Nanotechnology (SAINT) and School of Advanced Materials Science and Engineering, Sungkyunkwan University , Suwon 16419, South Korea
| | | | | | - Seongpil Hwang
- Department of Advanced Materials Chemistry, Korea University , Sejong 30019, South Korea
| | - Won-June Lee
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology , Gwangju 61005, South Korea
| | - Myung-Han Yoon
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology , Gwangju 61005, South Korea
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19
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Kryvchenkova O, Abdullah I, Macdonald JE, Elliott M, Anthopoulos T, Lin YH, Igić P, Kalna K, Cobley RJ. Nondestructive Method for Mapping Metal Contact Diffusion in In2O3 Thin-Film Transistors. ACS APPLIED MATERIALS & INTERFACES 2016; 8:25631-25636. [PMID: 27581104 PMCID: PMC5140079 DOI: 10.1021/acsami.6b10332] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/17/2016] [Accepted: 09/01/2016] [Indexed: 06/06/2023]
Abstract
The channel width-to-length ratio is an important transistor parameter for integrated circuit design. Contact diffusion into the channel during fabrication or operation alters the channel width and this important parameter. A novel methodology combining atomic force microscopy and scanning Kelvin probe microscopy (SKPM) with self-consistent modeling is developed for the nondestructive detection of contact diffusion on active devices. Scans of the surface potential are modeled using physically based Technology Computer Aided Design (TCAD) simulations when the transistor terminals are grounded and under biased conditions. The simulations also incorporate the tip geometry to investigate its effect on the measurements due to electrostatic tip-sample interactions. The method is particularly useful for semiconductor- and metal-semiconductor interfaces where the potential contrast resulting from dopant diffusion is below that usually detectable with scanning probe microscopy.
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Affiliation(s)
- Olga Kryvchenkova
- Electronic Systems Design Centre, Swansea University, Swansea SA1 8EN, U.K.
| | - Isam Abdullah
- School of Physics and Astronomy, Cardiff
University, The Parade, Cardiff CF24 3AA, U.K.
| | - John Emyr Macdonald
- School of Physics and Astronomy, Cardiff
University, The Parade, Cardiff CF24 3AA, U.K.
| | - Martin Elliott
- School of Physics and Astronomy, Cardiff
University, The Parade, Cardiff CF24 3AA, U.K.
| | - Thomas
D. Anthopoulos
- Department of Physics and Centre for Plastic Electronics,
Blackett Laboratory, Imperial College London, London SW7 2AZ, U.K.
| | - Yen-Hung Lin
- Department of Physics and Centre for Plastic Electronics,
Blackett Laboratory, Imperial College London, London SW7 2AZ, U.K.
| | - Petar Igić
- Electronic Systems Design Centre, Swansea University, Swansea SA1 8EN, U.K.
| | - Karol Kalna
- Electronic Systems Design Centre, Swansea University, Swansea SA1 8EN, U.K.
| | - Richard J. Cobley
- Electronic Systems Design Centre, Swansea University, Swansea SA1 8EN, U.K.
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20
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A mixed solution-processed gate dielectric for zinc-tin oxide thin-film transistor and its MIS capacitance. Sci Rep 2016; 6:33576. [PMID: 27641430 PMCID: PMC5027534 DOI: 10.1038/srep33576] [Citation(s) in RCA: 26] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/11/2016] [Accepted: 08/25/2016] [Indexed: 11/08/2022] Open
Abstract
Solution-processed gate dielectrics were fabricated with the combined ZrO2 and Al2O3 (ZAO) in the form of mixed and stacked types for oxide thin film transistors (TFTs). ZAO thin films prepared with double coatings for solid gate dielectrics were characterized by analytical tools. For the first time, the capacitance of the oxide semiconductor was extracted from the capacitance-voltage properties of the zinc-tin oxide (ZTO) TFTs with the combined ZAO dielectrics by using the proposed metal-insulator-semiconductor (MIS) structure model. The capacitance evolution of the semiconductor from the TFT model structure described well the threshold voltage shift observed in the ZTO TFT with the ZAO (1:2) gate dielectric. The electrical properties of the ZTO TFT with a ZAO (1:2) gate dielectric showed low voltage driving with a field effect mobility of 37.01 cm(2)/Vs, a threshold voltage of 2.00 V, an on-to-off current ratio of 1.46 × 10(5), and a subthreshold slope of 0.10 V/dec.
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21
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Park JH, Park JH, Biswas P, Kwon DK, Han SW, Baik HK, Myoung JM. Adopting Novel Strategies in Achieving High-Performance Single-Layer Network Structured ZnO Nanorods Thin Film Transistors. ACS APPLIED MATERIALS & INTERFACES 2016; 8:11564-11574. [PMID: 27096706 DOI: 10.1021/acsami.5b12321] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
High-performance, solution-processed transparent and flexible zinc oxide (ZnO) nanorods (NRs)-based single layer network structured thin film transistors (TFTs) were developed on polyethylene terephthalate (PET) substrate at 100 °C. Keeping the process-temperature under 100 °C, we have improved the device performance by introducing three low temperature-based techniques; regrowing ZnO to fill the void spaces in a single layer network of ZnO NRs, passivating the back channel with polymer, and adopting ZrO2 as the high-k dielectric. Notably, high-k amorphous ZrO2 was synthesized and deposited using a novel method at an unprecedented temperature of 100 °C. Using these methods, the TFTs exhibited a high mobility of 1.77 cm(2)/V·s. An insignificant reduction of 2.18% in mobility value after 3000 cycles of dynamic bending at a radius of curvature of 20 mm indicated the robust mechanical nature of the flexible ZnO NRs SLNS TFTs.
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Affiliation(s)
- Ji-Hyeon Park
- Department of Materials Science and Engineering, Yonsei University , 50 Yonseiro, Seoul, Republic of Korea
| | - Jee Ho Park
- Department of Materials Science and Engineering, Yonsei University , 50 Yonseiro, Seoul, Republic of Korea
| | - Pranab Biswas
- Department of Materials Science and Engineering, Yonsei University , 50 Yonseiro, Seoul, Republic of Korea
| | - Do Kyun Kwon
- Department of Materials Science and Engineering, Yonsei University , 50 Yonseiro, Seoul, Republic of Korea
| | - Sun Woong Han
- Department of Materials Science and Engineering, Yonsei University , 50 Yonseiro, Seoul, Republic of Korea
| | - Hong Koo Baik
- Department of Materials Science and Engineering, Yonsei University , 50 Yonseiro, Seoul, Republic of Korea
| | - Jae-Min Myoung
- Department of Materials Science and Engineering, Yonsei University , 50 Yonseiro, Seoul, Republic of Korea
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22
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Li-Assisted Low-Temperature Phase Transitions in Solution-Processed Indium Oxide Films for High-Performance Thin Film Transistor. Sci Rep 2016; 6:25079. [PMID: 27121951 PMCID: PMC4848541 DOI: 10.1038/srep25079] [Citation(s) in RCA: 26] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/24/2015] [Accepted: 04/11/2016] [Indexed: 11/09/2022] Open
Abstract
Lithium (Li)-assisted indium oxide (In2O3) thin films with ordered structures were prepared on solution-processed zirconium oxide (ZrO2) gate dielectrics by spin-casting and thermally annealing hydrated indium nitrate solutions with different Li nitrate loadings. It was found that the Li-assisted In precursor films on ZrO2 dielectrics could form crystalline structures even at processing temperatures (T) below 200 °C. Different In oxidation states were observed in the Li-doped films, and the development of such states was significantly affected by both temperature and the mol% of Li cations, [Li(+)]/([In(3+)] + [Li(+)]), in the precursor solutions. Upon annealing the Li-assisted precursor films below 200 °C, metastable indium hydroxide and/or indium oxyhydroxide phases were formed. These phases were subsequently transformed into crystalline In2O3 nanostructures after thermal dehydration and oxidation. Finally, an In2O3 film doped with 13.5 mol% Li(+) and annealed at 250 °C for 1 h exhibited the highest electron mobility of 60 cm(2) V(-1) s(-1) and an on/off current ratio above 10(8) when utilized in a thin film transistor.
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23
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Xu W, Cao H, Liang L, Xu JB. Aqueous Solution-Deposited Gallium Oxide Dielectric for Low-Temperature, Low-Operating-Voltage Indium Oxide Thin-Film Transistors: A Facile Route to Green Oxide Electronics. ACS APPLIED MATERIALS & INTERFACES 2015; 7:14720-14725. [PMID: 26054237 DOI: 10.1021/acsami.5b02451] [Citation(s) in RCA: 17] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
We reported a novel aqueous route to fabricate Ga2O3 dielectric at low temperature. The formation and properties of Ga2O3 were investigated by a wide range of characterization techniques, revealing that Ga2O3 films could effectively block leakage current even after annealing in air at 200 °C. Furthermore, all aqueous solution-processed In2O3/Ga2O3 TFTs fabricated at 200 and 250 °C showed mobilities of 1.0 and 4.1 cm2 V(-1) s(-1), on/off current ratio of ∼10(5), low operating voltages of 4 V, and negligible hysteresis. Our study represents a significant step toward the development of low-cost, low-temperature, and large-area green oxide electronics.
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Affiliation(s)
- Wangying Xu
- †Department of Electronic Engineering, Materials Science and Technology Research Center, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, China
| | | | | | - Jian-Bin Xu
- †Department of Electronic Engineering, Materials Science and Technology Research Center, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, China
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24
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Swisher SL, Volkman SK, Subramanian V. Tailoring indium oxide nanocrystal synthesis conditions for air-stable high-performance solution-processed thin-film transistors. ACS APPLIED MATERIALS & INTERFACES 2015; 7:10069-10075. [PMID: 25915094 DOI: 10.1021/acsami.5b00893] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Semiconducting metal oxides (ZnO, SnO2, In2O3, and combinations thereof) are a uniquely interesting family of materials because of their high carrier mobilities in the amorphous and generally disordered states, and solution-processed routes to these materials are of particular interest to the printed electronics community. Colloidal nanocrystal routes to these materials are particularly interesting, because nanocrystals may be formulated with tunable surface properties into stable inks, and printed to form devices in an additive manner. We report our investigation of an In2O3 nanocrystal synthesis for high-performance solution-deposited semiconductor layers for thin-film transistors (TFTs). We studied the effects of various synthesis parameters on the nanocrystals themselves, and how those changes ultimately impacted the performance of TFTs. Using a sintered film of solution-deposited In2O3 nanocrystals as the TFT channel material, we fabricated devices that exhibit field effect mobility of 10 cm(2)/(V s) and an on/off current ratio greater than 1 × 10(6). These results outperform previous air-stable nanocrystal TFTs, and demonstrate the suitability of colloidal nanocrystal inks for high-performance printed electronics.
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Affiliation(s)
- Sarah L Swisher
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California, United States
| | - Steven K Volkman
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California, United States
| | - Vivek Subramanian
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California, United States
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25
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Xu W, Wang H, Xie F, Chen J, Cao H, Xu JB. Facile and environmentally friendly solution-processed aluminum oxide dielectric for low-temperature, high-performance oxide thin-film transistors. ACS APPLIED MATERIALS & INTERFACES 2015; 7:5803-5810. [PMID: 25679286 DOI: 10.1021/am508775c] [Citation(s) in RCA: 42] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
We developed a facile and environmentally friendly solution-processed method for aluminum oxide (AlOx) dielectrics. The formation and properties of AlOx thin films under various annealing temperatures were intensively investigated by thermogravimetric analysis-differential scanning calorimetry (TGA-DSC), X-ray diffraction (XRD), spectroscopic ellipsometry, atomic force microscopy (AFM), attenuated total reflectance-Fourier transform infrared spectroscopy (ATR-FTIR), X-ray photoelectron spectroscopy (XPS), impedance spectroscopy, and leakage current measurements. The sol-gel-derived AlOx thin film undergoes the decomposition of organic residuals and nitrate groups, as well as conversion of aluminum hydroxides to form aluminum oxide, as the annealing temperature increases. Finally, the AlOx film is used as gate dielectric for a variety of low-temperature solution-processed oxide TFTs. Above all, the In2O3 and InZnO TFTs exhibited high average mobilities of 57.2 cm(2) V(-1) s(-1) and 10.1 cm(2) V(-1) s(-1), as well as an on/off current ratio of ∼10(5) and low operating voltages of 4 V at a maximum processing temperature of 300 °C. Therefore, the solution-processable AlOx could be a promising candidate dielectric for low-cost, low-temperature, and high-performance oxide electronics.
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Affiliation(s)
- Wangying Xu
- †Department of Electronic Engineering, Materials Science and Technology Research Center, The Chinese University of Hong Kong (CUHK), Shatin, New Territories, Hong Kong, China
| | - Han Wang
- †Department of Electronic Engineering, Materials Science and Technology Research Center, The Chinese University of Hong Kong (CUHK), Shatin, New Territories, Hong Kong, China
| | | | | | | | - Jian-Bin Xu
- †Department of Electronic Engineering, Materials Science and Technology Research Center, The Chinese University of Hong Kong (CUHK), Shatin, New Territories, Hong Kong, China
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26
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Park JH, Oh JY, Han SW, Lee TI, Baik HK. Low-temperature, solution-processed ZrO2:B thin film: a bifunctional inorganic/organic interfacial glue for flexible thin-film transistors. ACS APPLIED MATERIALS & INTERFACES 2015; 7:4494-4503. [PMID: 25664940 DOI: 10.1021/acsami.5b00036] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
A solution-processed boron-doped peroxo-zirconium oxide (ZrO2:B) thin film has been found to have multifunctional characteristics, providing both hydrophobic surface modification and a chemical glue layer. Specifically, a ZrO2:B thin film deposited on a hydrophobic layer becomes superhydrophilic following ultraviolet-ozone (UVO) treatment, whereas the same treatment has no effect on the hydrophobicity of the hydrophobic layer alone. Investigation of the ZrO2:B/hydrophobic interface layer using angle-resolved X-ray photoelectron spectroscopy (AR XPS) confirmed it to be chemically bonded like glue. Using the multifunctional nature of the ZrO2:B thin film, flexible amorphous indium oxide (In2O3) thin-film transistors (TFTs) were subsequently fabricated on a polyimide substrate along with a ZrO2:B/poly-4-vinylphenol (PVP) dielectric. An aqueous In2O3 solution was successfully coated onto the ZrO2:B/PVP dielectric, and the surface and chemical properties of the PVP and ZrO2:B thin films were analyzed by contact angle measurement, atomic force microscopy (AFM), Fourier transform infrared (FT-IR) spectroscopy, and X-ray photoelectron spectroscopy (XPS). The surface-engineered PVP dielectric was found to have a lower leakage current density (Jleak) of 4.38 × 10(-8) A/cm(2) at 1 MV/cm, with no breakdown behavior observed up to a bending radius of 5 mm. In contrast, the electrical characteristics of the flexible amorphous In2O3 TFT such as on/off current ratio (Ion/off) and electron mobility remained similar up to 10 mm of bending without degradation, with the device being nonactivated at a bending radius of 5 mm. These results suggest that ZrO2:B thin films could be used for low-temperature, solution-processed surface-modified flexible devices.
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Affiliation(s)
- Jee Ho Park
- Department of Materials Engineering, Yonsei University , Seoul 120-749, Republic of Korea
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Faber H, Lin YH, Thomas SR, Zhao K, Pliatsikas N, McLachlan MA, Amassian A, Patsalas PA, Anthopoulos TD. Indium oxide thin-film transistors processed at low temperature via ultrasonic spray pyrolysis. ACS APPLIED MATERIALS & INTERFACES 2015; 7:782-790. [PMID: 25490965 DOI: 10.1021/am5072139] [Citation(s) in RCA: 27] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
The use of ultrasonic spray pyrolysis is demonstrated for the growth of polycrystalline, highly uniform indium oxide films at temperatures in the range of 200-300 °C in air using an aqueous In(NO3)3 precursor solution. Electrical characterization of as-deposited films by field-effect measurements reveals a strong dependence of the electron mobility on deposition temperature. Transistors fabricated at ∼250 °C exhibit optimum performance with maximum electron mobility values in the range of 15-20 cm(2) V (-1) s(-1) and current on/off ratio in excess of 10(6). Structural and compositional analysis of as-grown films by means of X-ray diffraction, diffuse scattering, and X-ray photoelectron spectroscopy reveal that layers deposited at 250 °C are denser and contain a reduced amount of hydroxyl groups as compared to films grown at either lower or higher temperatures. Microstructural analysis of semiconducting films deposited at 250 °C by high resolution cross-sectional transmission electron microscopy reveals that as-grown layers are extremely thin (∼7 nm) and composed of laterally large (30-60 nm) highly crystalline In2O3 domains. These unique characteristics of the In2O3 films are believed to be responsible for the high electron mobilities obtained from transistors fabricated at 250 °C. Our work demonstrates the ability to grow high quality low-dimensional In2O3 films and devices via ultrasonic spray pyrolysis over large area substrates while at the same time it provides guidelines for further material and device improvements.
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Liu A, Liu G, Zhu H, Shin B, Fortunato E, Martins R, Shan F. Eco-friendly water-induced aluminum oxide dielectrics and their application in a hybrid metal oxide/polymer TFT. RSC Adv 2015. [DOI: 10.1039/c5ra15370k] [Citation(s) in RCA: 44] [Impact Index Per Article: 4.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022] Open
Abstract
Eco-friendly water-inducement method was used to fabricate hybrid metal oxide/polymer TFTs based on high-k AlOx dielectric with high electrical performance.
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Affiliation(s)
- Ao Liu
- College of Physics and Lab of New Fiber Materials and Modern Textile
- Growing Base for State Key Laboratory
- Qingdao University
- Qingdao 266071
- China
| | - Guoxia Liu
- College of Physics and Lab of New Fiber Materials and Modern Textile
- Growing Base for State Key Laboratory
- Qingdao University
- Qingdao 266071
- China
| | - Huihui Zhu
- College of Physics and Lab of New Fiber Materials and Modern Textile
- Growing Base for State Key Laboratory
- Qingdao University
- Qingdao 266071
- China
| | - Byoungchul Shin
- Electronic Ceramics Center
- DongEui University
- Busan 614-714
- Korea
| | - Elvira Fortunato
- Department of Materials Science/CENIMAT-I3N
- Faculty of Sciences and Technology
- New University of Lisbon and CEMOP-UNINOVA
- Campus de Caparica
- 2829-516 Caparica
| | - Rodrigo Martins
- Department of Materials Science/CENIMAT-I3N
- Faculty of Sciences and Technology
- New University of Lisbon and CEMOP-UNINOVA
- Campus de Caparica
- 2829-516 Caparica
| | - Fukai Shan
- College of Physics and Lab of New Fiber Materials and Modern Textile
- Growing Base for State Key Laboratory
- Qingdao University
- Qingdao 266071
- China
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Hoffmann RC, Kaloumenos M, Spiehl D, Erdem E, Repp S, Weber S, Schneider JJ. A microwave molecular solution based approach towards high-κ-tantalum(v)oxide nanoparticles: synthesis, dielectric properties and electron paramagnetic resonance spectroscopic studies of their defect chemistry. Phys Chem Chem Phys 2015; 17:31801-9. [DOI: 10.1039/c5cp05166e] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Transparent and dense dielectric Ta2O5 thin films are accessible via a solution based molecular approach.
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Affiliation(s)
- R. C. Hoffmann
- Fachbereich Chemie
- Eduard-Zintl-Institut für Anorganische und Physikalische Chemie
- Technische Universität Darmstadt
- 64287 Darmstadt
- Germany
| | - M. Kaloumenos
- Integrated Electronic Systems Lab
- Technische Universität Darmstadt
- 64283 Darmstadt
- Germany
| | - D. Spiehl
- Department of Printing Technology
- Technische Universität Darmstadt
- 64283 Darmstadt
- Germany
| | - E. Erdem
- Albert-Ludwigs Ludwigs-Universität Freiburg
- Institut für Physikalische Chemie
- 79104 Freiburg
- Germany
| | - S. Repp
- Albert-Ludwigs Ludwigs-Universität Freiburg
- Institut für Physikalische Chemie
- 79104 Freiburg
- Germany
| | - S. Weber
- Albert-Ludwigs Ludwigs-Universität Freiburg
- Institut für Physikalische Chemie
- 79104 Freiburg
- Germany
| | - J. J. Schneider
- Fachbereich Chemie
- Eduard-Zintl-Institut für Anorganische und Physikalische Chemie
- Technische Universität Darmstadt
- 64287 Darmstadt
- Germany
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Park H, Nam Y, Jin J, Bae BS. Space charge-induced unusually-high mobility of a solution-processed indium oxide thin film transistor with an ethylene glycol incorporated aluminum oxide gate dielectric. RSC Adv 2015. [DOI: 10.1039/c5ra21022d] [Citation(s) in RCA: 19] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/17/2023] Open
Abstract
Undecomposed ethylene glycol residuals in solution processed aluminum oxide gate dielectric result in the frequency-dependent capacitance.
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Affiliation(s)
- Hyungjin Park
- Laboratory of Optical Materials and Coating (LOMC)
- Department of Materials Science and Engineering
- Korea Advanced Institute of Science and Technology (KAIST)
- Daejeon 305-701
- Korea
| | - Yunyong Nam
- Laboratory of Optical Materials and Coating (LOMC)
- Department of Materials Science and Engineering
- Korea Advanced Institute of Science and Technology (KAIST)
- Daejeon 305-701
- Korea
| | - Jungho Jin
- Multiscale Hybrid Materials Laboratory (MHML)
- School of Materials Science and Engineering
- University of Ulsan
- Ulsan 680-749
- Korea
| | - Byeong-Soo Bae
- Laboratory of Optical Materials and Coating (LOMC)
- Department of Materials Science and Engineering
- Korea Advanced Institute of Science and Technology (KAIST)
- Daejeon 305-701
- Korea
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Lee WH, Lee SJ, Lim JA, Cho JH. Printed In-Ga-Zn-O drop-based thin-film transistors sintered using intensely pulsed white light. RSC Adv 2015. [DOI: 10.1039/c5ra13573g] [Citation(s) in RCA: 22] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
We developed printed IGZO TFTs by delivering droplets of a precursor solution using a picoliter fluidic dispensing system.
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Affiliation(s)
- Wi Hyoung Lee
- Department of Organic and Nano System Engineering
- Konkuk University
- Seoul 143-701
- Korea
| | - Seong Jun Lee
- SKKU Advanced Institute of Nanotechnology (SAINT) and School of Chemical Engineering
- Sungkyunkwan University
- Suwon 440-746
- Korea
| | - Jung Ah Lim
- Center for Opto-Electronic Materials and Devices
- Post-Silicon Semiconductor Institute
- Korea Institute of Science and Technology
- Seoul 136-791
- Korea
| | - Jeong Ho Cho
- SKKU Advanced Institute of Nanotechnology (SAINT) and School of Chemical Engineering
- Sungkyunkwan University
- Suwon 440-746
- Korea
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32
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Meng Y, Liu G, Liu A, Song H, Hou Y, Shin B, Shan F. Low-temperature fabrication of high performance indium oxide thin film transistors. RSC Adv 2015. [DOI: 10.1039/c5ra04145g] [Citation(s) in RCA: 61] [Impact Index Per Article: 6.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
In this study, indium oxide (In2O3) thin-film transistors (TFTs) were fabricated by a fully-solution process at low temperature.
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Affiliation(s)
- You Meng
- College of Physics and Lab of New Fiber Materials and Modern Textile
- Growing Base for State Key Laboratory
- Qingdao University
- Qingdao 266071
- China
| | - Guoxia Liu
- College of Physics and Lab of New Fiber Materials and Modern Textile
- Growing Base for State Key Laboratory
- Qingdao University
- Qingdao 266071
- China
| | - Ao Liu
- College of Physics and Lab of New Fiber Materials and Modern Textile
- Growing Base for State Key Laboratory
- Qingdao University
- Qingdao 266071
- China
| | - Huijun Song
- College of Physics and Lab of New Fiber Materials and Modern Textile
- Growing Base for State Key Laboratory
- Qingdao University
- Qingdao 266071
- China
| | - Yang Hou
- College of Physics and Lab of New Fiber Materials and Modern Textile
- Growing Base for State Key Laboratory
- Qingdao University
- Qingdao 266071
- China
| | - Byoungchul Shin
- Electronic Ceramics Center
- DongEui University
- Busan 614-714
- South Korea
| | - Fukai Shan
- College of Physics and Lab of New Fiber Materials and Modern Textile
- Growing Base for State Key Laboratory
- Qingdao University
- Qingdao 266071
- China
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Liu A, Liu GX, Zhu HH, Xu F, Fortunato E, Martins R, Shan FK. Fully solution-processed low-voltage aqueous In2O3 thin-film transistors using an ultrathin ZrO(x) dielectric. ACS APPLIED MATERIALS & INTERFACES 2014; 6:17364-17369. [PMID: 25285983 DOI: 10.1021/am505602w] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
We reported here "aqueous-route" fabrication of In2O3 thin-film transistors (TFTs) using an ultrathin solution-processed ZrOx dielectric thin film. The formation and properties of In2O3 thin films under various annealing temperatures were intensively examined by thermogravimetric analysis, Fourier transform infrared spectroscopy, and atomic force microscopy. The solution-processed ZrOx thin film followed by sequential UV/ozone treatment and low-temperature thermal-annealing processes showed an amorphous structure, a low leakage-current density (∼1 × 10(-9) A/cm(2) at 2 MV/cm), and a high breakdown electric field (∼7.2 MV/cm). On the basis of its implementation as the gate insulator, the In2O3 TFTs based on ZrOx annealed at 250 °C exhibit an on/off current ratio larger than 10(7), a field-effect mobility of 23.6 cm(2)/V·s, a subthreshold swing of 90 mV/decade, a threshold voltage of 0.13 V, and high stability. These promising properties were obtained at a low operating voltage of 1.5 V. These results suggest that "aqueous-route" In2O3 TFTs based on a solution-processed ZrOx dielectric could potentially be used for low-cost, low-temperature-processing, high-performance, and flexible devices.
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Affiliation(s)
- Ao Liu
- College of Physics and Lab of New Fiber Materials and Modern Textile, Growing Base for State Key Laboratory, Qingdao University , Qingdao 266071, China
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