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Martínez J, Mosquera-Vargas E, Fuenzalida V, Flores M, Bolaños G, Diosa J. Surface and Electrical Characterization of Bilayers Based on BiFeO3 and VO2. NANOMATERIALS 2022; 12:nano12152578. [PMID: 35957006 PMCID: PMC9370327 DOI: 10.3390/nano12152578] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/29/2022] [Revised: 07/22/2022] [Accepted: 07/23/2022] [Indexed: 12/04/2022]
Abstract
Thin films of BiFeO3, VO2, and BiFeO3/VO2 were grown on SrTiO3(100) and Al2O3(0001) monocrystalline substrates using radio frequency and direct current sputtering techniques. To observe the effect of the coupling between these materials, the surface of the films was characterized by profilometry, atomic force microscopy, and X-ray photoelectron spectroscopy. The heterostructures, monolayers, and bilayers based on BiFeO3 and VO2 grew with good adhesion and without delamination or signs of incompatibility between the layers. A good granular arrangement and RMS roughness between 1 and 5 nm for the individual layers (VO2 and BiFeO3) and between 6 and 18 nm for the bilayers (BiFeO3/VO2) were observed. Their grain size is between 20 nm and 26 nm for the individual layers and between 63 nm and 67 nm for the bilayers. X-ray photoelectron spectroscopy measurements show a higher proportion of V4+, Bi3+, and Fe3+ in the films obtained. The homogeneous ordering, low roughness, and oxidation states on the obtained surface show a good coupling in these films. The I-V curves show ohmic behavior at room temperature and change with increasing temperature. The effect of coupling these materials in a thin film shows the appearance of hysteresis cycles, I-V and R-T, which is typical of materials with high potential in applications, such as resistive memories and solar cells.
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Affiliation(s)
- Jhonatan Martínez
- Grupo de Transiciones de Fase y Materiales Funcionales, Departamento de Física, FCNE, Universidad del Valle, Santiago de Cali 76001, Colombia;
| | - Edgar Mosquera-Vargas
- Grupo de Transiciones de Fase y Materiales Funcionales, Departamento de Física, FCNE, Universidad del Valle, Santiago de Cali 76001, Colombia;
- Centro de Excelencia en Nuevos Materiales (CENM), Universidad del Valle, Santiago de Cali 76001, Colombia
- Correspondence: (E.M.-V.); (G.B.); (J.D.)
| | - Víctor Fuenzalida
- Laboratorio de Superficies y Nanomateriales, Departamento de Física, FCFM, Universidad de Chile, Av. Blanco Encalada 2008, Santiago de Chile 837.0415, Chile; (V.F.); (M.F.)
| | - Marcos Flores
- Laboratorio de Superficies y Nanomateriales, Departamento de Física, FCFM, Universidad de Chile, Av. Blanco Encalada 2008, Santiago de Chile 837.0415, Chile; (V.F.); (M.F.)
| | - Gilberto Bolaños
- Grupo de Física de Bajas Temperaturas, Universidad del Cauca, Popayán 190002, Colombia
- Correspondence: (E.M.-V.); (G.B.); (J.D.)
| | - Jesús Diosa
- Grupo de Transiciones de Fase y Materiales Funcionales, Departamento de Física, FCNE, Universidad del Valle, Santiago de Cali 76001, Colombia;
- Centro de Excelencia en Nuevos Materiales (CENM), Universidad del Valle, Santiago de Cali 76001, Colombia
- Correspondence: (E.M.-V.); (G.B.); (J.D.)
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Peng C, Ou K, Li G, Zhao Z, Li X, Liu C, Li X, Chen X, Lu W. Tunable and polarization-sensitive perfect absorber with a phase-gradient heterojunction metasurface in the mid-infrared. OPTICS EXPRESS 2021; 29:12893-12902. [PMID: 33985035 DOI: 10.1364/oe.422519] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/15/2021] [Accepted: 04/02/2021] [Indexed: 06/12/2023]
Abstract
Inspired by the growing family of Van der Waals materials, hBN supported phonon polaritons have attracted much attention due to their inherent hyperbolic dispersion properties in the mid-infrared. However, the lack of tunability imposes a severe restriction on the diversified, functional and integrated applications. Here, we propose a phase-gradient heterostructure metasurface to realize a dynamically tunable and polarization-sensitive perfect absorber in the mid-infrared through combining hBN and phase change VO2. Narrow-band perfect absorption at 7.2 µm can be switched to broadband around 11.2 µm through controlling the temperature of VO2. The governed physics of the bandwidth and absorption differences are demonstrated. Phonon polaritons in hBN phase-gradient configurations and plasmon polaritons in periodic VO2 blocks are respectively excited. We also investigate the absorption dependence on the polarization states of designed absorber. The method of engineering the absorption through controlling the temperature and polarization states opens up a new avenue for tunable applications such as data storage and integrated optical circuits.
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Multifunctional monoclinic VO2 nanorod thin films for enhanced energy applications: Photoelectrochemical water splitting and supercapacitor. J Electroanal Chem (Lausanne) 2019. [DOI: 10.1016/j.jelechem.2019.01.026] [Citation(s) in RCA: 16] [Impact Index Per Article: 3.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/23/2022]
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Ke Y, Wang S, Liu G, Li M, White TJ, Long Y. Vanadium Dioxide: The Multistimuli Responsive Material and Its Applications. SMALL 2018; 14:e1802025. [PMID: 30085392 DOI: 10.1002/smll.201802025] [Citation(s) in RCA: 48] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/27/2018] [Revised: 06/24/2018] [Indexed: 05/12/2023]
Affiliation(s)
- Yujie Ke
- School of Materials Science and Engineering; Nanyang Technological University; 50 Nanyang Avenue Singapore 639798 Singapore
| | - Shancheng Wang
- School of Materials Science and Engineering; Nanyang Technological University; 50 Nanyang Avenue Singapore 639798 Singapore
| | - Guowei Liu
- School of Materials Science and Engineering; Nanyang Technological University; 50 Nanyang Avenue Singapore 639798 Singapore
| | - Ming Li
- School of Materials Science and Engineering; Nanyang Technological University; 50 Nanyang Avenue Singapore 639798 Singapore
- Key Laboratory of Materials Physics; Anhui Key Laboratory of Nanomaterials and Nanotechnology; Institute of Solid State Physics; Chinese Academy of Sciences; Hefei 230031 P. R. China
| | - Timothy J. White
- School of Materials Science and Engineering; Nanyang Technological University; 50 Nanyang Avenue Singapore 639798 Singapore
| | - Yi Long
- School of Materials Science and Engineering; Nanyang Technological University; 50 Nanyang Avenue Singapore 639798 Singapore
- Singapore-HUJ Alliance for Research and Enterprise (SHARE); Nanomaterials for Energy and Energy-Water Nexus (NEW); Campus for Research Excellence and Technological Enterprise (CREATE); 1 Create Way Singapore 138602 Singapore
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Liang W, Gao M, Lu C, Zhang Z, Chan CH, Zhuge L, Dai J, Yang H, Chen C, Park BH, Jia Q, Lin Y. Enhanced Metal-Insulator Transition Performance in Scalable Vanadium Dioxide Thin Films Prepared Using a Moisture-Assisted Chemical Solution Approach. ACS APPLIED MATERIALS & INTERFACES 2018; 10:8341-8348. [PMID: 29372641 DOI: 10.1021/acsami.7b18533] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Vanadium dioxide (VO2) is a strong-correlated metal-oxide with a sharp metal-insulator transition (MIT) for a range of applications. However, synthesizing epitaxial VO2 films with desired properties has been a challenge because of the difficulty in controlling the oxygen stoichiometry of VO x, where x can be in the range of 1 < x < 2.5 and V has multiple valence states. Herein, a unique moisture-assisted chemical solution approach has been developed to successfully manipulate the oxygen stoichiometry, to significantly broaden the growth window, and to significantly enhance the MIT performance of VO2 films. The obvious broadening of the growth window of stoichiometric VO2 thin films, from 4 to 36 °C, is ascribed to a self-adjusted process for oxygen partial pressure at different temperatures by introducing moisture. A resistance change as large as 4 orders of magnitude has been achieved in VO2 thin films with a sharp transition width of less than 1 °C. The much enhanced MIT properties can be attributed to the higher and more uniform oxygen stoichiometry. This technique is not only scientifically interesting but also technologically important for fabricating wafer-scaled VO2 films with uniform properties for practical device applications.
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Affiliation(s)
- Weizheng Liang
- State Key Laboratory of Electronic Thin Films and Integrated Devices , University of Electronic Science and Technology of China , Chengdu , Sichuan 610054 , P. R. China
| | - Min Gao
- State Key Laboratory of Electronic Thin Films and Integrated Devices , University of Electronic Science and Technology of China , Chengdu , Sichuan 610054 , P. R. China
| | - Chang Lu
- State Key Laboratory of Electronic Thin Films and Integrated Devices , University of Electronic Science and Technology of China , Chengdu , Sichuan 610054 , P. R. China
| | - Zhi Zhang
- Department of Applied Physics , The Hong Kong Polytechnic University , Kowloon , Hong Kong , P. R. China
| | - Cheuk Ho Chan
- Department of Applied Physics , The Hong Kong Polytechnic University , Kowloon , Hong Kong , P. R. China
| | - Lanjian Zhuge
- Analysis and Testing Center , Soochow University , Suzhou 215123 , P. R. China
| | - Jiyan Dai
- Department of Applied Physics , The Hong Kong Polytechnic University , Kowloon , Hong Kong , P. R. China
| | - Hao Yang
- College of Science , Nanjing University of Aeronautics and Astronautics , Nanjing 211106 , P. R. China
| | - Chonglin Chen
- Department of Physics and Astronomy , University of Texas at San Antonio , San Antonio , Texas 78249 , United States
| | - Bae Ho Park
- Division of Quantum Phases & Devices, Department of Physics , Konkuk University , Seoul 143-701 , Korea
| | - Quanxi Jia
- Department of Materials Design and Innovation , University at Buffalo - The State University of New York , Buffalo , New York 14260 , United States
- Division of Quantum Phases & Devices, Department of Physics , Konkuk University , Seoul 143-701 , Korea
| | - Yuan Lin
- State Key Laboratory of Electronic Thin Films and Integrated Devices , University of Electronic Science and Technology of China , Chengdu , Sichuan 610054 , P. R. China
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Li M, Magdassi S, Gao Y, Long Y. Hydrothermal Synthesis of VO 2 Polymorphs: Advantages, Challenges and Prospects for the Application of Energy Efficient Smart Windows. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2017; 13:1701147. [PMID: 28722273 DOI: 10.1002/smll.201701147] [Citation(s) in RCA: 86] [Impact Index Per Article: 12.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/08/2017] [Revised: 06/03/2017] [Indexed: 06/07/2023]
Abstract
Vanadium dioxide (VO2 ) is a widely studied inorganic phase change material, which has a reversible phase transition from semiconducting monoclinic to metallic rutile phase at a critical temperature of τc ≈ 68 °C. The abrupt decrease of infrared transmittance in the metallic phase makes VO2 a potential candidate for thermochromic energy efficient windows to cut down building energy consumption. However, there are three long-standing issues that hindered its application in energy efficient windows: high τc , low luminous transmittance (Tlum ), and undesirable solar modulation ability (ΔTsol ). Many approaches, including nano-thermochromism, porous films, biomimetic surface reconstruction, gridded structures, antireflective overcoatings, etc, have been proposed to tackle these issues. The first approach-nano-thermochromism-which is to integrate VO2 nanoparticles in a transparent matrix, outperforms the rest; while the thermochromic performance is determined by particle size, stoichiometry, and crystallinity. A hydrothermal method is the most common method to fabricate high-quality VO2 nanoparticles, and has its own advantages of large-scale synthesis and precise phase control of VO2 . This Review focuses on hydrothermal synthesis, physical properties of VO2 polymorphs, and their transformation to thermochromic VO2 (M), and discusses the advantages, challenges, and prospects of VO2 (M) in energy-efficient smart windows application.
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Affiliation(s)
- Ming Li
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Shlomo Magdassi
- Institute of Chemistry, The Hebrew University, Edmond Safra Campus, Jerusalem, 91904, Israel
| | - Yanfeng Gao
- School of Materials Science and Engineering, Shanghai University, Shanghai, 200444, China
| | - Yi Long
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
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Song GY, Oh C, Sinha S, Son J, Heo J. Facile Phase Control of Multivalent Vanadium Oxide Thin Films (V 2O 5 and VO 2) by Atomic Layer Deposition and Postdeposition Annealing. ACS APPLIED MATERIALS & INTERFACES 2017; 9:23909-23917. [PMID: 28569063 DOI: 10.1021/acsami.7b03398] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Atomic layer deposition was adopted to deposit VOx thin films using vanadyl tri-isopropoxide {VO[O(C3H7)]3, VTIP} and water (H2O) at 135 °C. The self-limiting and purge-time-dependent growth behaviors were studied by ex situ ellipsometry to determine the saturated growth conditions for atomic-layer-deposited VOx. The as-deposited films were found to be amorphous. The structural, chemical, and optical properties of the crystalline thin films with controlled phase formation were investigated after postdeposition annealing at various atmospheres and temperatures. Reducing and oxidizing atmospheres enabled the formation of pure VO2 and V2O5 phases, respectively. The possible band structures of the crystalline VO2 and V2O5 thin films were established. Furthermore, an electrochemical response and a voltage-induced insulator-to-metal transition in the vertical metal-vanadium oxide-metal device structure were observed for V2O5 and VO2 films, respectively.
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Affiliation(s)
- Gwang Yeom Song
- Department of Materials Science and Engineering, and Optoelectronics Convergence Research Center, Chonnam National University , Gwangju 61186, Republic of Korea
| | - Chadol Oh
- Department of Materials Science and Engineering, Pohang University of Science and Technology , Pohang 37673, Republic of Korea
| | - Soumyadeep Sinha
- Department of Materials Science and Engineering, and Optoelectronics Convergence Research Center, Chonnam National University , Gwangju 61186, Republic of Korea
| | - Junwoo Son
- Department of Materials Science and Engineering, Pohang University of Science and Technology , Pohang 37673, Republic of Korea
| | - Jaeyeong Heo
- Department of Materials Science and Engineering, and Optoelectronics Convergence Research Center, Chonnam National University , Gwangju 61186, Republic of Korea
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Influence of Discharge Current on Phase Transition Properties of High Quality Polycrystalline VO₂ Thin Film Fabricated by HiPIMS. MATERIALS 2017; 10:ma10060633. [PMID: 28772990 PMCID: PMC5554014 DOI: 10.3390/ma10060633] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/29/2017] [Revised: 06/04/2017] [Accepted: 06/06/2017] [Indexed: 11/17/2022]
Abstract
To fabricate high-quality polycrystalline VO₂ thin film with a metal-insulator transition (MIT) temperature less than 50 °C, high-power impulse magnetron sputtering with different discharge currents was employed in this study. The as-deposited VO₂ films were characterized by a four-point probe resistivity measurement system, visible-near infrared (IR) transmittance spectra, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy. The resistivity results revealed that all the as-deposited films had a high resistance change in the phase transition process, and the MIT temperature decreased with the increased discharge current, where little deterioration in the phase transition properties, such as the resistance and transmittance changes, could be found. Additionally, XRD patterns at various temperatures exhibited that some reverse deformations that existed in the MIT process of the VO₂ film, with a large amount of preferred crystalline orientations. The decrease of the MIT temperature with little deterioration on phase transition properties could be attributed to the reduction of the preferred grain orientations.
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Arjun N, Yang TCK, Pan GT, Yang YL, Kareiva A. The study of thermochromic and thermo-optical properties of sol–gel V1−x−y WxSiyO2 films by response surface method. J Taiwan Inst Chem Eng 2016. [DOI: 10.1016/j.jtice.2016.10.014] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/25/2022]
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Yamin T, Wissberg S, Cohen H, Cohen-Taguri G, Sharoni A. Ultrathin Films of VO2 on r-Cut Sapphire Achieved by Postdeposition Etching. ACS APPLIED MATERIALS & INTERFACES 2016; 8:14863-14870. [PMID: 27183029 DOI: 10.1021/acsami.6b02859] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
The metal-insulator transition (MIT) properties of correlated oxides thin films, such as VO2, are dramatically affected by strain induced at the interface with the substrate, which usually changes with deposition thickness. For VO2 grown on r-cut sapphire, there is a minimum deposition thickness required for a significant MIT to appear, around 60 nm. We show that in these thicker films an interface layer develops, which accompanies the relaxation of film strain and enhanced electronic transition. If these interface dislocations are stable at room temperature, we conjectured, a new route opens to control thickness of VO2 films by postdeposition thinning of relaxed films, overcoming the need for thickness-dependent strain-engineered substrates. This is possible only if thinning does not alter the films' electronic properties. We find that wet etching in a dilute NaOH solution can effectively thin the VO2 films, which continue to show a significant MIT, even when etched to 10 nm, for which directly deposited films show nearly no transition. The structural and chemical composition were not modified by the etching, but the grain size and film roughness were, which modified the hysteresis width and magnitude of the MIT resistance change.
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Affiliation(s)
| | | | - Hagai Cohen
- Department of Chemical Research Support, Weizmann Institute of Science , Rehovot, Israel IL-76100
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Shen N, Dong B, Cao C, Chen Z, Luo H, Gao Y. Solid-state-reaction synthesis of VO2 nanoparticles with low phase transition temperature, enhanced chemical stability and excellent thermochromic properties. RSC Adv 2015. [DOI: 10.1039/c5ra20732k] [Citation(s) in RCA: 21] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
Solid-state-reaction synthesis of VO2 nanoparticles at 500 °C with different time.
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Affiliation(s)
- Nan Shen
- Shanghai Institute of Ceramics (SIC)
- Chinese Academy of Sciences (CAS)
- Shanghai
- China
- University of Chinese Academy of Sciences
| | - Bingrong Dong
- Shanghai Institute of Ceramics (SIC)
- Chinese Academy of Sciences (CAS)
- Shanghai
- China
- University of Chinese Academy of Sciences
| | - Chuanxiang Cao
- Shanghai Institute of Ceramics (SIC)
- Chinese Academy of Sciences (CAS)
- Shanghai
- China
| | - Zhang Chen
- School of Materials Science and Engineering
- Shanghai University
- Shanghai
- China
| | - Hongjie Luo
- Shanghai Institute of Ceramics (SIC)
- Chinese Academy of Sciences (CAS)
- Shanghai
- China
- School of Materials Science and Engineering
| | - Yanfeng Gao
- Shanghai Institute of Ceramics (SIC)
- Chinese Academy of Sciences (CAS)
- Shanghai
- China
- School of Materials Science and Engineering
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Bahlawane N, Lenoble D. Vanadium Oxide Compounds:Structure, Properties, and Growth from the Gas Phase. ACTA ACUST UNITED AC 2014. [DOI: 10.1002/cvde.201400057] [Citation(s) in RCA: 104] [Impact Index Per Article: 10.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2022]
Affiliation(s)
- Naoufal Bahlawane
- Nanomaterials Research Unit, SAM Department; Centre de Recherche Public - Gabriel Lippmann; 41, rue du Brill 4422 Belvaux (Luxembourg)
| | - Damien Lenoble
- Nanomaterials Research Unit, SAM Department; Centre de Recherche Public - Gabriel Lippmann; 41, rue du Brill 4422 Belvaux (Luxembourg)
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