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Zhu Y, Qu Z, Zhang J, Wang X, Jiang S, Xu Z, Yang F, Wu Z, Dai Y. First-principles prediction of ferroelectric Janus Si 2XY (X/Y = S/Se/Te, X ≠ Y) monolayers with negative Poisson's ratios. Phys Chem Chem Phys 2024; 26:4555-4563. [PMID: 38247301 DOI: 10.1039/d3cp05107b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/23/2024]
Abstract
Nowadays, two-dimensional (2D) materials with Janus structures evoke much attention due to their unique mechanical and electronic properties. In this work, Janus Pma2-Si2XY (X/Y = S/Se/Te, X ≠ Y) ferroelectric monolayers are firstly proposed and systematically investigated by first-principles calculations. These monolayers exhibit remarkable mechanical properties, including small Young's modulus values, negative Poisson's ratios (NPRs) and large critical strains, reflecting their exceptional flexibility and stretchability. More strikingly, the novel structures of Si2STe and Si2SeTe also endow them with in-plane spontaneous polarization (Ps) and low energy barrier for phase transition, with Ps and energy barrier values being 1.632 × 10-10 C m-1 and 159 meV for Si2STe and 1.149 × 10-10 C m-1 and 196.6 meV for Si2SeTe. The ab initio molecular dynamics (AIMD) simulations reveal high Curie temperatures (Tc) for Si2STe and Si2SeTe, ranging between 1300 K and 1400 K. Additionally, Si2XY monolayers exhibit high anisotropic carrier mobility (∼103 cm2 V-1 s-1) and an extraordinary light absorption coefficient (∼105 cm-1). Our research not only broadens the family of 2D Janus ferroelectric materials, but also demonstrates their potential applications in nanomechanical, nanoelectronic and optoelectronic devices.
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Affiliation(s)
- Yunlai Zhu
- School of Integrated Circuits, Anhui University, Hefei, Anhui, 230601, China.
| | - Zihan Qu
- School of Integrated Circuits, Anhui University, Hefei, Anhui, 230601, China.
| | - Jishun Zhang
- School of Integrated Circuits, Anhui University, Hefei, Anhui, 230601, China.
| | - Xiaoteng Wang
- School of Integrated Circuits, Anhui University, Hefei, Anhui, 230601, China.
| | - Shuo Jiang
- School of Integrated Circuits, Anhui University, Hefei, Anhui, 230601, China.
| | - Zuyu Xu
- School of Integrated Circuits, Anhui University, Hefei, Anhui, 230601, China.
| | - Fei Yang
- School of Integrated Circuits, Anhui University, Hefei, Anhui, 230601, China.
| | - Zuheng Wu
- School of Integrated Circuits, Anhui University, Hefei, Anhui, 230601, China.
| | - Yuehua Dai
- School of Integrated Circuits, Anhui University, Hefei, Anhui, 230601, China.
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Hlushchenko D, Siudzinska A, Cybinska J, Guzik M, Bachmatiuk A, Kudrawiec R. Stability of mechanically exfoliated layered monochalcogenides under ambient conditions. Sci Rep 2023; 13:19114. [PMID: 37925524 PMCID: PMC10625602 DOI: 10.1038/s41598-023-46092-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/08/2023] [Accepted: 10/27/2023] [Indexed: 11/06/2023] Open
Abstract
Monochalcogenides of groups III (GaS, GaSe) and VI (GeS, GeSe, SnS, and SnSe) are materials with interesting thickness-dependent characteristics, which have been applied in many areas. However, the stability of layered monochalcogenides (LMs) is a real problem in semiconductor devices that contain these materials. Therefore, it is an important issue that needs to be explored. This article presents a comprehensive study of the degradation mechanism in mechanically exfoliated monochalcogenides in ambient conditions using Raman and photoluminescence spectroscopy supported by structural methods. A higher stability (up to three weeks) was observed for GaS. The most reactive were Se-containing monochalcogenides. Surface protrusions appeared after the ambient exposure of GeSe was detected by scanning electron microscopy. In addition, the degradation of GeS and GeSe flakes was observed in the operando experiment in transmission electron microscopy. Additionally, the amorphization of the material progressed from the flake edges. The reported results and conclusions on the degradation of LMs are useful to understand surface oxidation, air stability, and to fabricate stable devices with monochalcogenides. The results indicate that LMs are more challenging for exfoliation and optical studies than transition metal dichalcogenides such as MoS2, MoSe2, WS2, or WSe2.
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Affiliation(s)
- Daria Hlushchenko
- Lukasiewicz Research Network, PORT Polish Center for Technology Development, Stablowicka 147, 54-066, Wroclaw, Poland.
- Department of Semiconductor Materials Engineering, Faculty of Fundamental Problems of Science and Technology, Wroclaw University of Science and Technology, Wybrzeze Wyspianskiego 27, 50-370, Wroclaw, Poland.
| | - Anna Siudzinska
- Lukasiewicz Research Network, PORT Polish Center for Technology Development, Stablowicka 147, 54-066, Wroclaw, Poland
| | - Joanna Cybinska
- Lukasiewicz Research Network, PORT Polish Center for Technology Development, Stablowicka 147, 54-066, Wroclaw, Poland
- Faculty of Chemistry, University of Wroclaw, F. Joliot-Curie 14, 50-383, Wroclaw, Poland
| | - Malgorzata Guzik
- Lukasiewicz Research Network, PORT Polish Center for Technology Development, Stablowicka 147, 54-066, Wroclaw, Poland
- Faculty of Chemistry, University of Wroclaw, F. Joliot-Curie 14, 50-383, Wroclaw, Poland
| | - Alicja Bachmatiuk
- Lukasiewicz Research Network, PORT Polish Center for Technology Development, Stablowicka 147, 54-066, Wroclaw, Poland
| | - Robert Kudrawiec
- Lukasiewicz Research Network, PORT Polish Center for Technology Development, Stablowicka 147, 54-066, Wroclaw, Poland.
- Department of Semiconductor Materials Engineering, Faculty of Fundamental Problems of Science and Technology, Wroclaw University of Science and Technology, Wybrzeze Wyspianskiego 27, 50-370, Wroclaw, Poland.
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Xu T, Zhang J, Shimada T, Wang J, Yang H. Intrinsic Atomic-Scale Antiferroelectric VOF 3 Nanowire with Ultrahigh-Energy Storage Properties. NANO LETTERS 2023; 23:9080-9086. [PMID: 37722001 DOI: 10.1021/acs.nanolett.3c02929] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/20/2023]
Abstract
Antiferroelectrics with antiparallel dipoles are receiving tremendous attention for their technological importance and fundamental interest. However, intrinsic one-dimensional (1D) materials harboring antiferroelectric ordering have rarely been reported despite the promise of novel paradigms for miniaturized and high-density electronics. Herein, based on first- and second-principles calculations, we demonstrate the VOF3 atomic wire, exfoliated from an experimentally synthesized yet underexplored 1D van der Waals (vdW) bulk, as a new 1D antiferroelectric material. The energetic, thermal, and dynamic stabilities of the nanowire are confirmed theoretically. Moreover, the temperature-dependent phase transitions and double-hysteresis polarization-field loops are computed for the VOF3 nanowire by constructing the second-principles model. According to the hysteresis loops, high energy densities and efficiencies can be obtained simultaneously at room temperature in the VOF3 nanowire under moderate applied fields. Our identified 1D atomic wire not only expands the family of antiferroelectricity but also holds potential for novel high-power energy storage nanodevices.
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Affiliation(s)
- Tao Xu
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- Department of Mechanical Engineering and Science, Kyoto University, Nishikyo-ku, Kyoto 615-8540, Japan
| | - Jingtong Zhang
- Department of Engineering Mechanics, School of Aeronautics and Astronautics, Zhejiang University, Hangzhou 310027, China
- Zhejiang Laboratory, Hangzhou, Zhejiang 311100, China
| | - Takahiro Shimada
- Department of Mechanical Engineering and Science, Kyoto University, Nishikyo-ku, Kyoto 615-8540, Japan
| | - Jie Wang
- Department of Engineering Mechanics, School of Aeronautics and Astronautics, Zhejiang University, Hangzhou 310027, China
- Zhejiang Laboratory, Hangzhou, Zhejiang 311100, China
| | - Hongxin Yang
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
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Yao CJ, Xun W, Yu M, Hao X, Zhong JL, Gu H, Wu YZ. Tailoring angle dependent ferroelectricity in nanoribbons of group-IV monochalcogenides. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 35:495301. [PMID: 37652037 DOI: 10.1088/1361-648x/acf5ba] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/04/2023] [Accepted: 08/31/2023] [Indexed: 09/02/2023]
Abstract
Ferroelectricity is significant in low dimensional structures due to the potential applications in multifunctional nanodevices. In this work, the tailoring angle dependent ferroelectricity is systematically investigated for the nanoribbons and nanowires of puckered group-IV monochalcogenides MX (M =Ge,Sn; X =S,Se). Based on first-principles calculations, it is found that the ferroelectricity of nanoribbon and nanowire strongly depends on the tailoring angle. Firstly, the critical width for the bare nanoribbon of group-IV monochalcogenide is obtained and discussed. As the nanowires are concerned, the ferroelectricity will disappear when the tailoring angle becomes small. At last, H-passivation on the edge and the strain engineering are employed to improve the ferroelectricity of nanoribbon, and it is obtained that H-passivation is beneficial to the enhancement of polarization for nanoribbons tailored near the armchair direction, while the polarization of nanoribbons tailored along the diagonal direction will decrease when the edges are passivated with H atoms, and the tensile strain along the length direction always favors the improvement of ferroelectricity of the considered nanoribbons. Therefore, tailoring angle has great influence on the ferroelectricity of nanoribbons and nanowires, which may be used as an effective way to tune the ferroelectricity and further the electronic structures of nanostructures in the field of nanoelectronics.
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Affiliation(s)
- Cheng-Jun Yao
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, and School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou 215009, People's Republic of China
| | - Wei Xun
- Faculty of Electronic Information Engineering, Huaiyin Institute of Technology, Huaian 223003, People's Republic of China
| | - Miao Yu
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, and School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou 215009, People's Republic of China
| | - Xiang Hao
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, and School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou 215009, People's Republic of China
| | - Jia-Lin Zhong
- School of Electronic and Information Engineering, Suzhou University of Science and Technology, Suzhou 215009, People's Republic of China
- Semiconductor Sensor and Microelectronic System TEKISM United Laboratory, Suzhou 215009, People's Republic of China
| | - Han Gu
- School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu 215500, People's Republic of China
| | - Yin-Zhong Wu
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, and School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou 215009, People's Republic of China
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Huang J, Ke C, Zhu W, Liu S. One dimensional ferroelectric nanothreads with axial and radial polarization. NANOSCALE HORIZONS 2023; 8:1205-1216. [PMID: 37381975 DOI: 10.1039/d3nh00154g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/30/2023]
Abstract
Long-range ferroelectric crystalline order usually fades away as the spatial dimension decreases, and hence there are few two-dimensional (2D) ferroelectrics and far fewer one-dimensional (1D) ferroelectrics. Due to the depolarization field, low-dimensional ferroelectrics rarely possess the polarization along the direction of reduced dimensionality. Here, using first-principles density functional theory, we explore the structural evolution of nanoribbons of varying widths constructed by cutting a 2D sheet of ferroelectric α-III2VI3 (III = Al, Ga, In; VI = S, Se, Te). We discover a one-dimensional ferroelectric nanothread (1DFENT) of ultrasmall diameter with both axial and radial polarization, potentially enabling ultra-dense data storage with a 1D domain of just three unit cells being the functional unit. The polarization in 1DFENT of Ga2Se3 exhibits an unusual piezoelectric response: a stretching stress along the axial direction will increase both the axial and radial polarization, referred to as the auxetic piezoelectric effect. Utilizing the intrinsically flat electronic bands, we demonstrate the coexistence of ferroelectricity and ferromagnetism in 1DFENT and a counterintuitive charge-doping-induced metal-to-insulator transition. The 1DFENT with both axial and radial polarization offers a counterexample to the Mermin-Wagner theorem in 1D and suggests a new platform for the design of ultrahigh-density memory and the exploration of exotic states of matter.
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Affiliation(s)
- Jiawei Huang
- Key Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, School of Science, Westlake University, Hangzhou, Zhejiang 310030, China.
| | - Changming Ke
- Key Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, School of Science, Westlake University, Hangzhou, Zhejiang 310030, China.
- Institute of Natural Sciences, Westlake Institute for Advanced Study, Hangzhou, Zhejiang 310024, China
| | - Wei Zhu
- Key Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, School of Science, Westlake University, Hangzhou, Zhejiang 310030, China.
- Institute of Natural Sciences, Westlake Institute for Advanced Study, Hangzhou, Zhejiang 310024, China
| | - Shi Liu
- Key Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, School of Science, Westlake University, Hangzhou, Zhejiang 310030, China.
- Institute of Natural Sciences, Westlake Institute for Advanced Study, Hangzhou, Zhejiang 310024, China
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Jang J, Kim J, Sung D, Kim JH, Jung JE, Lee S, Park J, Lee C, Bae H, Im S, Park K, Choi YJ, Hong S, Kim K. Electrical Transport Properties Driven by Unique Bonding Configuration in γ-GeSe. NANO LETTERS 2023; 23:3144-3151. [PMID: 37026614 DOI: 10.1021/acs.nanolett.2c04425] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Group IV monochalcogenides have recently shown great potential for their thermoelectric, ferroelectric, and other intriguing properties. The electrical properties of group IV monochalcogenides exhibit a strong dependence on the chalcogen type. For example, GeTe exhibits high doping concentration, whereas S/Se-based chalcogenides are semiconductors with sizable bandgaps. Here, we investigate the electrical and thermoelectric properties of γ-GeSe, a recently identified polymorph of GeSe. γ-GeSe exhibits high electrical conductivity (∼106 S/m) and a relatively low Seebeck coefficient (9.4 μV/K at room temperature) owing to its high p-doping level (5 × 1021 cm-3), which is in stark contrast to other known GeSe polymorphs. Elemental analysis and first-principles calculations confirm that the abundant formation of Ge vacancies leads to the high p-doping concentration. The magnetoresistance measurements also reveal weak antilocalization because of spin-orbit coupling in the crystal. Our results demonstrate that γ-GeSe is a unique polymorph in which the modified local bonding configuration leads to substantially different physical properties.
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Affiliation(s)
- Jeongsu Jang
- Department of Physics, Yonsei University, Seoul 03722, Korea
| | - Joonho Kim
- Department of Physics, Yonsei University, Seoul 03722, Korea
| | - Dongchul Sung
- Department of Physics, Graphene Research Institute and GRI-TPC International Research Center, Sejong University, Seoul 05006, Korea
| | - Jong Hyuk Kim
- Department of Physics, Yonsei University, Seoul 03722, Korea
| | - Joong-Eon Jung
- Department of Physics, Yonsei University, Seoul 03722, Korea
| | - Sol Lee
- Department of Physics, Yonsei University, Seoul 03722, Korea
- Center for Nanomedicine, Institute for Basic Science (IBS), Seoul 03722, Korea
| | - Jinsub Park
- Department of Physics, Yonsei University, Seoul 03722, Korea
| | - Chaewoon Lee
- Department of Physics, Yonsei University, Seoul 03722, Korea
| | - Heesun Bae
- Department of Physics, Yonsei University, Seoul 03722, Korea
| | - Seongil Im
- Department of Physics, Yonsei University, Seoul 03722, Korea
| | - Kibog Park
- Department of Physics, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Korea
- Department of Electrical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Korea
| | - Young Jai Choi
- Department of Physics, Yonsei University, Seoul 03722, Korea
| | - Suklyun Hong
- Department of Physics, Graphene Research Institute and GRI-TPC International Research Center, Sejong University, Seoul 05006, Korea
| | - Kwanpyo Kim
- Department of Physics, Yonsei University, Seoul 03722, Korea
- Center for Nanomedicine, Institute for Basic Science (IBS), Seoul 03722, Korea
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Zhang JJ, Altalhi T, Yakobson BI. Flexo-Ferroelectricity and a Work Cycle of a Two-Dimensional-Monolayer Actuator. ACS NANO 2023; 17:5121-5128. [PMID: 36853621 DOI: 10.1021/acsnano.3c00492] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Well recognized mechanical flexibility of two-dimensional (2D) materials is shown to bring about unexpected behaviors to the recently discovered monolayer ferroelectrics, especially those displaying normal, off-plane polarization. A "ferro-flexo" coupling term is introduced into the energy expression, to account for the connection of ferroelectricity and bending (strain gradient) of the layer, to predict and quantify its spontaneous curvature and how it affects the phase transitions. With InP as a chemically specific representative example, the first-principles calculations indeed reveal strong coupling ∼P·ϰ between the ferroelectric polarization (P) and the curvature of the layer (ϰ ≡ 1/r), having profound consequences for both mechanics and ferroelectricity of the material. Due to flexural relaxation, the spontaneous polarization and the transition barrier rise significantly, leading to large changes in the Curie temperature, coercive field, and domain wall width and energy, based on Monte Carlo simulations. On the other hand, the polarization switching, characteristic to ferroelectrics, does induce an overall layer bending, enabling a conversion of electrical signal to movement as an actuator; its possible work-cycles and maximum work-efficiency are briefly discussed.
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Affiliation(s)
- Jun-Jie Zhang
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Tariq Altalhi
- Chemistry Department, Taif University, Taif 21974, Saudi Arabia
| | - Boris I Yakobson
- Chemistry Department, Taif University, Taif 21974, Saudi Arabia
- Department of Chemistry, Rice University, Houston, Texas 77005, United States
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Zhang F, Chen W, Zhang Y, Yin H. 1D group V-VI-VII ternary nanowires: moderate band gaps, easy to exfoliate from bulk, and unexpected ferroelectricity. Phys Chem Chem Phys 2023; 25:6112-6120. [PMID: 36752084 DOI: 10.1039/d2cp05581c] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/27/2023]
Abstract
One-dimensional nanowires have emerged as compelling ideal materials due to their characteristic structure, properties, and applications in nanodevices. Herein, based on experimental vdW-chain bulk crystals, a series of one-dimensional (1D) XVYVIZVII (X = As, Sb, Bi; Y = S, Se, Te; Z = Cl, Br, I) ternary nanowires are theoretically investigated. Such exfoliated 1D nanowires possess excellent stability and moderate band gaps (1.76-3.16 eV). The calculated electron mobilities were found to reach a magnitude of 102 cm2 V-1 s-1 and even up to 322.95 cm2 V-1 s-1 for 1D BiSeI nanowires, which are much larger than those of the previously reported 1D materials. Furthermore, the appropriate band edge alignments and considerable optical absorption endow 1D XVYVIZVII nanowires with prospective photocatalytic properties for water splitting. Notably, AsSI and AsSeI nanowires possess a unique non-centrosymmetric structure and exhibit promising 1D ferroelectricity. Large spontaneous polarization values, Ps, of 11.31 × 10-10 and 6.92 × 10-10 C m-1 are obtained for 1D AsSI and AsSeI nanowires, respectively, and such 1D ferroelectricity can be regulated by intra-chain strains. Our calculations not only broaden the family of 1D materials but also reveal their great potential applications in electronic, optoelectronic, and ferroelectric devices.
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Affiliation(s)
- Fumin Zhang
- Joint Center for Theoretical Physics, and Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng 475004, China. .,International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, School of Physics and Electronics, Henan University, Kaifeng 475004, China
| | - Weizhen Chen
- Joint Center for Theoretical Physics, and Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng 475004, China. .,International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, School of Physics and Electronics, Henan University, Kaifeng 475004, China
| | - Yungeng Zhang
- Joint Center for Theoretical Physics, and Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng 475004, China. .,International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, School of Physics and Electronics, Henan University, Kaifeng 475004, China
| | - Huabing Yin
- Joint Center for Theoretical Physics, and Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng 475004, China. .,International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, School of Physics and Electronics, Henan University, Kaifeng 475004, China
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Zhang K, Wu X, Yang J. Transition metal dichalcogenide magnetic atomic chains. NANOSCALE ADVANCES 2022; 4:4905-4912. [PMID: 36381508 PMCID: PMC9642364 DOI: 10.1039/d2na00543c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/15/2022] [Accepted: 10/18/2022] [Indexed: 06/16/2023]
Abstract
Reducing the dimensions of a material to the atomic scale endows them with novel properties that are significantly different from their bulk counterparts. A family of stoichiometric transition metal dichalcogenide (TMD) MX2 (M = Ti to Mn, and X = S to Te) atomic chains is proposed. The results reveal that the MX2 atomic chains, the smallest possible nanostructure of a TMD, are lattice-dynamically stable, as confirmed from their phonon spectra and ab initio molecular dynamics simulations. In contrast to their bulk and two-dimensional (2D) counterparts, the TiX2 atomic chains are nonmagnetic semiconductors, while the VX2, CrX2, and MnX2 chains are unipolar magnetic, bipolar magnetic, and antiferromagnetic semiconductors, respectively. In addition, the VX2, CrX2, and MnX2 chains can be converted via carrier doping from magnetic semiconductors to half metals with reversible spin-polarization orientation at the Fermi level. Of these chains, the MnX2 chains exhibit either ferromagnetic or antiferromagnetic half metallicity depending on the injected carrier type and concentration. The diverse and tunable electronic and magnetic properties in the MX2 chains originate, based on crystal field theory, from the occupation of the metal d orbitals and the exchange interaction between the tetrahedrally coordinated metal atoms in the atomic chain. The calculated interaction between the carbon nanotubes and the MX2 chains implies that armchair (7,7) or armchair (8,8) carbon nanotubes are appropriate sheaths for growing MX2 atomic single-chains in a confined channel. This study reveals the diverse magnetic properties of MX2 atomic single-chains and provides a promising building block for nanoscale electronic and spintronic devices.
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Affiliation(s)
- Kai Zhang
- Hefei National Research Center of Physical Sciences at the Microscale, University of Science and Technology of China Hefei Anhui 230026 China
| | - Xiaojun Wu
- Hefei National Research Center of Physical Sciences at the Microscale, University of Science and Technology of China Hefei Anhui 230026 China
- School of Chemistry and Materials Sciences, CAS Key Laboratory of Materials for Energy Conversion, Synergetic Innovation of Quantum Information & Quantum Technology, CAS Center for Excellence in Nanoscience, University of Science and Technology of China Hefei Anhui 230026 China
| | - Jinlong Yang
- Hefei National Research Center of Physical Sciences at the Microscale, University of Science and Technology of China Hefei Anhui 230026 China
- School of Chemistry and Materials Sciences, CAS Key Laboratory of Materials for Energy Conversion, Synergetic Innovation of Quantum Information & Quantum Technology, CAS Center for Excellence in Nanoscience, University of Science and Technology of China Hefei Anhui 230026 China
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10
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Wang W, Cao W, Zhang L, Li G, Wu Y, Wen S, Mei D. Rb2FeGe3S8 and Cs2FeGe3S8: New layered chalcogenides in A2MIIMIV3Q8 family with antiferromagnetic property. J SOLID STATE CHEM 2022. [DOI: 10.1016/j.jssc.2022.123276] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/26/2022]
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11
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Jana S, Panigrahi G, Tripathy B, Malladi SK, Sundaramoorthy M, Arumugam S, Niranjan MK, Prakash J. Synthesis, characterization, and electronic structure of SrBi2S4. J SOLID STATE CHEM 2022. [DOI: 10.1016/j.jssc.2022.123250] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
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12
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Chen H, Zhao J, Wang X, Chen X, Zhang Z, Hua M. Two-dimensional ferroelectric MoS 2/Ga 2O 3 heterogeneous bilayers with highly tunable photocatalytic and electrical properties. NANOSCALE 2022; 14:5551-5560. [PMID: 35343531 DOI: 10.1039/d2nr00466f] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Two-dimensional van der Waals heterostructures with strong intrinsic ferroelectrics are highly promising for novel devices with designed electronic properties. The polarization reversal transition of the 2D ferroelectric Ga2O3 monolayer offers a new approach to tune the photocatalytic and electrical properties of MoS2/Ga2O3 heterogeneous bilayers. In this work, we study MoS2/Ga2O3 heterogeneous bilayers with different intrinsic polarization using hybrid-functional calculations. We closely investigate the structural, electronic and optical properties of two stable stacking configurations with opposite polarization. The results reveal a distinct switch from type-I to type-II heterostructures owing to polarization reversal transition of the 2D ferroelectric Ga2O3 monolayer. Biaxial strain engineering leads to type-I-to-II and type-II-to-III transitions in the two polarized models, respectively. Intriguingly, one of the MoS2/Ga2O3 heterolayers has a larger spatial separation of the valence and conduction band edges and excellent optical absorption ranging from infrared to ultraviolet region under biaxial strain, thus ensuring promising novel applications such as flexible electrical and optical devices. Based on the highly tunable physical properties of the bilayer heterostructures, we further explore their potential applications, such as photocatalytic water splitting and field-controlled switch channel in MOSFET devices.
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Affiliation(s)
- Haohao Chen
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China.
| | - Junlei Zhao
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China.
| | - Xinyu Wang
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China.
| | - Xiaolong Chen
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China.
| | - Zhaofu Zhang
- Department of Engineering, University of Cambridge, Cambridge CB2 1PZ, UK.
| | - Mengyuan Hua
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China.
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13
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Bie J, Zhou J, Fa W. Quasi‐1D Antiferroelectricity in Centrosymmetric CsTaS
3
Crystal. ADVANCED THEORY AND SIMULATIONS 2022. [DOI: 10.1002/adts.202200022] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
Affiliation(s)
- Jie Bie
- National Laboratory of Solid State Microstructures Collaborative Innovation Center of Advanced Microstructures and Department of Physics Nanjing University Nanjing 210093 China
| | - Jian Zhou
- National Laboratory of Solid State Microstructures Department of Materials Science and Engineering and Jiangsu Key Laboratory of Artificial Functional Materials Nanjing University Nanjing 210093 China
| | - Wei Fa
- National Laboratory of Solid State Microstructures Collaborative Innovation Center of Advanced Microstructures and Department of Physics Nanjing University Nanjing 210093 China
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14
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Stonemeyer S, Dogan M, Cain JD, Azizi A, Popple DC, Culp A, Song C, Ercius P, Cohen ML, Zettl A. Targeting One- and Two-Dimensional Ta-Te Structures via Nanotube Encapsulation. NANO LETTERS 2022; 22:2285-2292. [PMID: 35271292 DOI: 10.1021/acs.nanolett.1c04615] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Fine control over material synthesis on the nanoscale can facilitate the stabilization of competing crystalline structures. Here, we demonstrate how carbon nanotube reaction vessels can be used to selectively create one-dimensional TaTe3 chains or two-dimensional TaTe2 nanoribbons with exquisite control of the chain number or nanoribbon thickness and width. Transmission electron microscopy and scanning transmission electron microscopy reveal the detailed atomic structure of the encapsulated materials. Complex superstructures such as multichain spiraling and apparent multilayer moirés are observed. The rare 2H phase of TaTe2 (1H in monolayer) is found to be abundant as an encapsulated nanoribbon inside carbon nanotubes. The experimental results are complemented by density functional theory calculations for the atomic and electronic structure, which uncovers the prevalence of 2H-TaTe2 due to nanotube-to-nanoribbon charge transfer and size confinement. Calculations also reveal new 1T' type charge density wave phases in TaTe2 that could be observed in experimental studies.
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Affiliation(s)
- Scott Stonemeyer
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States
- Department of Chemistry, University of California at Berkeley, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- Kavli Energy NanoSciences Institute at the University of California at Berkeley, Berkeley, California 94720, United States
| | - Mehmet Dogan
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Jeffrey D Cain
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- Kavli Energy NanoSciences Institute at the University of California at Berkeley, Berkeley, California 94720, United States
| | - Amin Azizi
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States
- Kavli Energy NanoSciences Institute at the University of California at Berkeley, Berkeley, California 94720, United States
| | - Derek C Popple
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States
- Department of Chemistry, University of California at Berkeley, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- Kavli Energy NanoSciences Institute at the University of California at Berkeley, Berkeley, California 94720, United States
| | - Austin Culp
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States
| | - Chengyu Song
- National Center for Electron Microscopy, The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720 United States
| | - Peter Ercius
- National Center for Electron Microscopy, The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720 United States
| | - Marvin L Cohen
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Alex Zettl
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- Kavli Energy NanoSciences Institute at the University of California at Berkeley, Berkeley, California 94720, United States
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15
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Zi Y, Zhu J, Hu L, Wang M, Huang W. Nanoengineering of Tin Monosulfide (SnS)‐Based Structures for Emerging Applications. SMALL SCIENCE 2021. [DOI: 10.1002/smsc.202100098] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/15/2022] Open
Affiliation(s)
- You Zi
- School of Chemistry and Chemical Engineering Nantong University Nantong Jiangsu 226019 P. R. China
| | - Jun Zhu
- School of Chemistry and Chemical Engineering Nantong University Nantong Jiangsu 226019 P. R. China
| | - Lanping Hu
- School of Chemistry and Chemical Engineering Nantong University Nantong Jiangsu 226019 P. R. China
| | - Mengke Wang
- School of Chemistry and Chemical Engineering Nantong University Nantong Jiangsu 226019 P. R. China
| | - Weichun Huang
- School of Chemistry and Chemical Engineering Nantong University Nantong Jiangsu 226019 P. R. China
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16
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Wu M, Li J. Sliding ferroelectricity in 2D van der Waals materials: Related physics and future opportunities. Proc Natl Acad Sci U S A 2021; 118:e2115703118. [PMID: 34862304 PMCID: PMC8685923 DOI: 10.1073/pnas.2115703118] [Citation(s) in RCA: 48] [Impact Index Per Article: 16.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/08/2021] [Indexed: 11/18/2022] Open
Abstract
Near the 100th anniversary of the discovery of ferroelectricity, so-called sliding ferroelectricity has been proposed and confirmed recently in a series of experiments that have stimulated remarkable interest. Such ferroelectricity exists widely and exists only in two-dimensional (2D) van der Waals stacked layers, where the vertical electric polarization is switched by in-plane interlayer sliding. Reciprocally, interlayer sliding and the "ripplocation" domain wall can be driven by an external vertical electric field. The unique combination of intralayer stiffness and interlayer slipperiness of 2D van der Waals layers greatly facilitates such switching while still maintaining environmental and mechanical robustness at ambient conditions. In this perspective, we discuss the progress and future opportunities in this behavior. The origin of such ferroelectricity as well as a general rule for judging its existence are summarized, where the vertical stacking sequence is crucial for its formation. This discovery broadens 2D ferroelectrics from very few material candidates to most of the known 2D materials. Their low switching barriers enable high-speed data writing with low energy cost. Related physics like Moiré ferroelectricity, the ferroelectric nonlinear anomalous Hall effect, and multiferroic coupling are discussed. For 2D valleytronics, nontrivial band topology and superconductivity, their possible couplings with sliding ferroelectricity via certain stacking or Moiré ferroelectricity also deserve interest. We provide critical reviews on the current challenges in this emerging area.
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Affiliation(s)
- Menghao Wu
- School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China;
| | - Ju Li
- Department of Nuclear Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139;
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
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17
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Bafekry A, Shahrokhi M, Shafique A, Jappor HR, Fadlallah MM, Stampfl C, Ghergherehchi M, Mushtaq M, Feghhi SAH, Gogova D. Semiconducting Chalcogenide Alloys Based on the (Ge, Sn, Pb) (S, Se, Te) Formula with Outstanding Properties: A First-Principles Calculation Study. ACS OMEGA 2021; 6:9433-9441. [PMID: 33869923 PMCID: PMC8047724 DOI: 10.1021/acsomega.0c06024] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/11/2020] [Accepted: 03/18/2021] [Indexed: 06/12/2023]
Abstract
Very recently, a new class of the multicationic and -anionic entropy-stabilized chalcogenide alloys based on the (Ge, Sn, Pb) (S, Se, Te) formula has been successfully fabricated and characterized experimentally [Zihao Deng et al., Chem. Mater. 32, 6070 (2020)]. Motivated by the recent experiment, herein, we perform density functional theory-based first-principles calculations in order to investigate the structural, mechanical, electronic, optical, and thermoelectric properties. The calculations of the cohesive energy and elasticity parameters indicate that the alloy is stable. Also, the mechanical study shows that the alloy has a brittle nature. The GeSnPbSSeTe alloy is a semiconductor with a direct band gap of 0.4 eV (0.3 eV using spin-orbit coupling effect). The optical analysis illustrates that the first peak of Im(ε) for the GeSnPbSSeTe alloy along all polarization directions is located in the visible range of the spectrum which renders it a promising material for applications in optical and electronic devices. Interestingly, we find an optically anisotropic character of this system which is highly desirable for the design of polarization-sensitive photodetectors. We have accurately predicted the thermoelectric coefficients and have calculated a large power factor value of 3.7 × 1011 W m-1 K-2 s-1 for p-type. The high p-type power factor is originated from the multiple valleys near the valence band maxima. The anisotropic results of the optical and transport properties are related to the specific tetragonal alloy unit cell.
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Affiliation(s)
- Asadollah Bafekry
- Department
of Radiation Application, Shahid Beheshti
University, 19839 69411 Tehran, Iran
- Department
of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
| | - Masoud Shahrokhi
- Department
of Physics, Faculty of Science, University
of Kurdistan, 66177-15175 Sanandaj, Iran
| | - Aamir Shafique
- Department
of Physics, Lahore University of Management
Sciences, 54792 Lahore, Pakistan
| | - Hamad R. Jappor
- Department
of Physics, College of Education for Pure Sciences, University of Babylon, 964 Hilla, Iraq
| | | | - Catherine Stampfl
- School
of Physics, The University of Sydney, New South Wales 2006, Australia
| | - Mitra Ghergherehchi
- College
of Electronic and Electrical Engineering, Sungkyunkwan University, 440-746 Suwon, Korea
| | - Muhammad Mushtaq
- Department
of Physics, Women University of Azad Jammu
and Kashmir, 12500 Bagh, Pakistan
| | | | - Daniela Gogova
- Department
of Physics, University of Oslo, P.O. Box 1048, Blindern, 0316 Oslo, Norway
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18
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Yang C, Chen M, Li S, Zhang X, Hua C, Bai H, Xiao C, Yang SA, He P, Xu ZA, Lu Y. Coexistence of Ferroelectricity and Ferromagnetism in One-Dimensional SbN and BiN Nanowires. ACS APPLIED MATERIALS & INTERFACES 2021; 13:13517-13523. [PMID: 33689259 DOI: 10.1021/acsami.0c20570] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Ferroelectricity exists in a variety of three- and two-dimensional materials and is of great significance for the development of electronic devices. However, the presence of ferroelectricity in one-dimensional materials is extremely rare. Here, we predict ferroelectricity in one-dimensional SbN and BiN nanowires. Their polarization strengths are 1 order of magnitude higher than ever reported values in one-dimensional structures. Moreover, we find that spontaneous spin polarization can be generated in SbN and BiN nanowires by moderate hole doping. This is the first time the coexistence of both ferroelectricity and ferromagnetism in a one-dimensional system has been reported. Our finding not only broadens the family of one-dimensional ferroelectric materials but also offers a promising platform for novel electronic and spintronic applications.
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Affiliation(s)
- Chao Yang
- School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Miaogen Chen
- School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
- Key Laboratory of Intelligent Manufacturing Quality Big Data Tracing and Analysis of Zhejiang Province, Department of Physics, China Jiliang University, Hangzhou 310018, China
| | - Si Li
- Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Department of Physics and Synergetic Innovation Center for Quantum Effects and Applications, Hunan Normal University, Changsha 410081, China
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore 487372, Singapore
| | - Xuanlin Zhang
- School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Chenqiang Hua
- Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, China
| | - Hua Bai
- Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, China
| | - Chengcheng Xiao
- Departments of Materials and Physics, and the Thomas Young Centre for Theory and Simulation of Materials, Imperial College London, London SW7 2 AZ, U.K
| | - Shengyuan A Yang
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore 487372, Singapore
| | - Pimo He
- Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, China
| | - Zhu-An Xu
- Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, China
| | - Yunhao Lu
- School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
- Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, China
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19
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Jia Y, Luo F, Hao X, Meng Q, Dou W, Zhang L, Wu J, Zhai S, Zhou M. Intrinsic Valley Polarization and High-Temperature Ferroelectricity in Two-Dimensional Orthorhombic Lead Oxide. ACS APPLIED MATERIALS & INTERFACES 2021; 13:6480-6488. [PMID: 33507081 DOI: 10.1021/acsami.0c17878] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Recent years have witnessed a surge of research in two-dimensional (2D) ferroelectric structures that may circumvent the depolarization effect in conventional perovskite oxide films. Herein, by first-principles calculations, we predict that an orthorhombic phase of lead(II) oxide, PbO, serves as a promising candidate for 2D ferroelectrics with good stability. With a semiconducting nature, 2D ferroelectric PbO exhibits intrinsic valley polarization, which leads to robust ferroelectricity with an in-plane spontaneous polarization of 2.4 × 10-10 C/m and a Curie temperature of 455 K. Remarkably, we reveal that the ferroelectricity is strain-tunable, and ferroelasticity coexists in the PbO film, implying the realization of 2D multiferroics. The underlying physical mechanism is generally applicable and can be extended to other oxide films such as ferroelectric SnO and GeO, thus paving an avenue for future design and fabrication of functional ultrathin devices that are compatible with Si-based technology.
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Affiliation(s)
- Yizhen Jia
- School of Physics, Beihang University, Beijing 100191, China
| | - Fangxue Luo
- School of Physics, Beihang University, Beijing 100191, China
| | - Xiamin Hao
- School of Physics, Beihang University, Beijing 100191, China
| | - Qingling Meng
- School of Physics, Beihang University, Beijing 100191, China
| | - Wenzhen Dou
- School of Physics, Beihang University, Beijing 100191, China
| | - Ling Zhang
- School of Physics, Beihang University, Beijing 100191, China
| | - Jinge Wu
- School of Physics, Beihang University, Beijing 100191, China
| | - Shuwei Zhai
- School of Physics, Beihang University, Beijing 100191, China
| | - Miao Zhou
- School of Physics, Beihang University, Beijing 100191, China
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20
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Ren Y, Wu M. 0D/1D organic ferroelectrics/multiferroics for ultrahigh density integration: Helical hydrogen-bonded chains, multi-mode switching, and proton synaptic transistors. J Chem Phys 2021; 154:044705. [PMID: 33514112 DOI: 10.1063/5.0035745] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/07/2023] Open
Abstract
In recent years, room-temperature ferroelectricity has been experimentally confirmed in a series of two-dimensional (2D) materials. Theoretically, for isolated ferroelectricity in even lower dimensions such as 1D or 0D, the switching barriers may still ensure the room-temperature robustness for ultrahigh-density non-volatile memories, which has yet been scarcely explored. Here, we show ab initio designs of 0D/1D ferroelectrics/multiferroics based on functionalized transition-metal molecular sandwich nanowires (SNWs) with intriguing properties. Some functional groups such as -COOH will spontaneously form into robust threefold helical hydrogen-bonded chains around SNWs with considerable polarizations. Two modes of ferroelectric switching are revealed: when the ends of SNWs are not hydrogen-bonded, the polarizations can be reversed via ligand reorientation that will reform the hydrogen-bonded chains and alter their helicity; when both ends are hydrogen-bonded, the polarizations can be reversed via proton transfer without changing the helicity of chains. The combination of those two modes makes the system the smallest proton conductor with a moderate migration barrier, which is lower compared with many prevalent proton-conductors for higher mobility while still ensuring the robustness at ambient conditions. This desirable feature can be utilized for constructing nanoscale artificial ionic synapses that may enable neuromorphic computing. In such a design of synaptic transistors, the migration of protons through those chains can be controlled and continuously change the conductance of MXene-based post-neuron for nonvolatile multilevel resistance. The success of mimicking synaptic functions will make such designs promising in future high-density artificial neutral systems.
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Affiliation(s)
- Yangyang Ren
- School of Physics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Menghao Wu
- School of Physics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
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21
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Zhang JJ, Zhu D, Yakobson BI. Heterobilayer with Ferroelectric Switching of Topological State. NANO LETTERS 2021; 21:785-790. [PMID: 33356322 DOI: 10.1021/acs.nanolett.0c04531] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The realization of multifunctional nanomaterials is both fundamentally intriguing and practically appealing to be used in nanoscale devices. Here, a heterobilayer consisting of realistic 2D-material components of matching lattice symmetry, that is, one being the β-phase antimonene β-Sb known for its strong spin-orbit coupling and ferroelectric In2Se3 monolayer, is designed and explored with first-principles density functional theory. The ferroelectric polarization of the In2Se3 layer induces distinctly different electronic properties in the bilayer. With polarization directed "inward", the bilayer is a trivial insulator with spatially-indirect band gap (potentially beneficial for photovoltaics). Surprisingly, when polarized "outward", the bilayer displays nontrivial topological state, Z2 = 1. This suggests that the external electric field can reversibly switch between these two states, inviting potential applications in future multifunctional devices.
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Affiliation(s)
- Jun-Jie Zhang
- Department of Materials Science and NanoEngineeringand ⊥Department of Chemistry, Rice University, Houston, Texas 77005, United States
| | - Dongyang Zhu
- Department of Chemical and Biomolecular Engineering, Rice University, Houston, Texas 77005, United States
| | - Boris I Yakobson
- Department of Materials Science and NanoEngineeringand ⊥Department of Chemistry, Rice University, Houston, Texas 77005, United States
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22
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Soleimani M, Pourfath M. Ferroelectricity and phase transitions in In 2Se 3 van der Waals material. NANOSCALE 2020; 12:22688-22697. [PMID: 33165464 DOI: 10.1039/d0nr04096g] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
van der Waals layered α-In2Se3 has shown out-of-plane ferroelectricity down to the bilayer and monolayer thicknesses at room temperature that can be switched by an applied electric field. This work addresses the missing theoretical framework through a comprehensive study on the layer-dependent electronic structure, ferroelectricity and the inter-layer interaction of α-In2Se3, by using first-principles density functional theory. Furthermore, surface states and their response to the built-in internal depolarizing field were carefully analyzed. Phase transition and Curie temperatures of 1L α-In2Se3 were studied by employing Monte Carlo and ab initio molecular dynamics simulations. The estimated Curie point is above room temperature, making 1L α-In2Se3 a promising candidate for future ultra-thin ferroelectric devices.
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Affiliation(s)
- Maryam Soleimani
- School of Electrical and Computer Engineering, University College of Engineering, University of Tehran, Tehran 14395-515, Iran.
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23
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Sarkar AS, Stratakis E. Recent Advances in 2D Metal Monochalcogenides. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2020; 7:2001655. [PMID: 33173730 PMCID: PMC7610304 DOI: 10.1002/advs.202001655] [Citation(s) in RCA: 20] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/04/2020] [Revised: 07/24/2020] [Indexed: 06/11/2023]
Abstract
The family of emerging low-symmetry and structural in-plane anisotropic two-dimensional (2D) materials has been expanding rapidly in recent years. As an important emerging anisotropic 2D material, the black phosphorene analog group IVA-VI metal monochalcogenides (MMCs) have been surged recently due to their distinctive crystalline symmetries, exotic in-plane anisotropic electronic and optical response, earth abundance, and environmentally friendly characteristics. In this article, the recent research advancements in the field of anisotropic 2D MMCs are reviewed. At first, the unique wavy crystal structures together with the optical and electronic properties of such materials are discussed. The Review continues with the various methods adopted for the synthesis of layered MMCs including micromechanical and liquid phase exfoliation as well as physical vapor deposition. The last part of the article focuses on the application of the structural anisotropic response of 2D MMCs in field effect transistors, photovoltaic cells nonlinear optics, and valleytronic devices. Besides presenting the significant research in the field of this emerging class of 2D materials, this Review also delineates the existing limitations and discusses emerging possibilities and future prospects.
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Affiliation(s)
- Abdus Salam Sarkar
- Institute of Electronic Structure and LaserFoundation for Research and Technology‐HellasHeraklionCrete700 13Greece
| | - Emmanuel Stratakis
- Institute of Electronic Structure and LaserFoundation for Research and Technology‐HellasHeraklionCrete700 13Greece
- Physics DepartmentUniversity of CreteHeraklionCrete710 03Greece
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24
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Zhong T, Wu M. Fullerene-based 0D ferroelectrics/multiferroics for ultrahigh-density and ultrafast nonvolatile memories. Phys Chem Chem Phys 2020; 22:12039-12043. [PMID: 32436928 DOI: 10.1039/d0cp01797c] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Recently, the existence of room-temperature ferroelectricity has been experimentally confirmed in a number of two-dimensional (2D) materials. With a switching barrier large enough to be stable against thermal fluctuation, ferroelectricity in even lower dimensions like 1D or 0D may be explored for data storage of higher density, which has been scarcely reported. Here, we show the first-principles design of 0D ferroelectrics/multiferroics based on polar functionalized fullerene. It turns out that the ferroelectric polarization of endohedral metallofullerenes can be reversed with the diffusion of metal ions inside when the fullerene is fixed on a substrate. If its bonding with the substrate is relatively weak, the rotation of fullerene will be more favorable in energy for ferroelectric switching. The switching barriers of both modes, for the candidates with considerable magnetic moments and dipole moments, are all in the ideal range for working under ambient conditions. Moreover, compared with conventional ferroelectrics for data storage, they may be endowed with a high areal density (∼105 Gbit per in2) and high writing speed (∼102 GHz) that are respectively more than 2 and 3 orders of magnitude higher.
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Affiliation(s)
- Tingting Zhong
- School of Physics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China.
| | - Menghao Wu
- School of Physics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China.
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