Construction and Characterization of [1,6-Di(N-carbazolyl)-2,4-hexadiyne] Diacetylene Polymer Bicrystals

Vibrational and theoretical study of selected diacetylenes

Six commonly used disubstituted diacetylenes with short side-chains (RCCCCR, where R=CH2OH, CH2OPh, C(CH3)2OH, C(CH3)3, Si(CH3)3, and Ph) were analyzed using vibrational spectroscopy and quantum-chemical calculations to shed new light on structural and spectroscopic properties of these compounds. Prior to that the conformational analysis of diacetylenes was performed to search the Potential Energy Surface for low-energy minima. Theoretical investigations were followed by the potential energy distribution (PED) analysis to gain deeper insight into FT-Raman and FT-IR spectra that, in some cases, were recorded for the first time for the studied compounds. The analysis was focused mainly on spectral features of the diacetylene system sensitive to the substitution. Shifts of the characteristic bands and changes in bond lengths were observed when changing the substituent. Furthermore, Fermi resonance was observed in the vibrational spectra of some diacetylenes. FT-IR spectra were measured by using two methods, i.e. transmission (with KBr substrate) and Attenuated Total Reflection (ATR), showing the latter adequate and fast tool for IR measurements of diacetylenes. Additionally, Surface Enhanced Raman Spectroscopy (SERS) was applied for phenyl derivative for the first time to study its interaction with metallic nanoparticles that seems to be perpendicular.

Crystal Structure of and Defects in the Pentacene Thin Film Phase

The aromatic hydrocarbon pentacene is currently under investigation for use as the active layer in electronic devices such as thin film field effect transistors. We have used X-Ray Diffraction (XRD), Electron Diffraction (ED), Low Voltage Electron Microscopy (LVEM), High Resolution Electron Microscopy (HREM) and molecular modeling to investigate the thin film phase of pentacene. We will report the orthorhombic symmetry and lattice parameters of the thin film phase measured experimentally from these techniques. The structure of extended defects such as dislocations and grain boundaries will influence the electrical and mechanical characteristics of the films. Here we show a direct image of an edge dislocation in the thin film phase and discuss the way in which the lattice accommodates the defect.