Detection of charge storage on molecular thin films of tris(8-hydroxyquinoline) aluminum (Alq3) by Kelvin force microscopy: a candidate system for high storage capacity memory cells

Complexes of In(III) with 8-hydroxyquinoline-5-sulfonate in solution: structural studies and the effect of cationic surfactants on the photophysical behaviour

Following previous studies on the complexation in aqueous solutions of 8-hydroxyquinoline-5-sulfonate (8-HQS) with the trivalent metal ions, Al(III) and Ga(III) and various other metal ions, using multinuclear NMR, DFT calculations, UV-vis absorption and luminescence techniques, we have extended our studies on 8-HQS complexation to the trivalent metal ion In(III). The study combines the high sensitivity of luminescence techniques and the selectivity of multinuclear NMR spectroscopy with the structural details accessible through DFT calculations, and aims to obtain a complete understanding of the complexation between the In³⁺ metal ion and 8-HQS, and how this influences the luminescence behaviour. A full speciation study has been performed and, as has been reported for the complexes of 8-hydroxyquinoline (8-HQ), the dominant complexes of 8-HQS with In(III) show marked differences in the complexation behaviour when compared with the equivalent complexes with the other group 13 cations Al(III) and Ga(III). While all three complexes have a 1 : 3 (metal : ligand) stoichiometry, those with Al(III) and Ga(III) show a mer-geometry of the ligands around the metal centre, whereas the fac-geometry is observed for the complexes with In(III). On binding to metal ions, 8-HQS shows a marked increase in the intensity of the fluorescence emission band compared to that of the virtually non-luminescent free ligand. However, the increase for In(III) is less pronounced than with Al(III) or Ga(III). These observations have important implications for the application of the complexes in sensing, light emitting devices (e.g. OLEDs), or as electron transport layers in photovoltaics for solar energy conversion. Furthermore, surfactant complexation is known to improve the fluorescence intensity in metal complexes with 8-HQS, by inhibiting the ligand exchange, as we have reported for complexes of HQS with Al(III) and Ga(III). Accordingly, in view of the development of applications in either sensing or optoelectronics, our interest also includes the study of HQS complexes of In(III) in the presence of cationic surfactants, in comparison with previous results with Al(III) and Ga(III).

4,5-Diazafluorene-Based Donor-Acceptor Small Molecules as Charge Trapping Elements for Tunable Nonvolatile Organic Transistor Memory

Three diazafluorene derivatives triphenylamine (TPA)(PDAF) n (n = 1, 2, 3) serving as small molecular elements are designed and synthesized via concentrated sulfuric acid mediated Friedel-Crafts reaction. With highly nonplanar topological configuration, TPA(PDAF)3 shows weaker intermolecular interaction in the solid states and thus exhibits single nanomolecular behavior, which is crucial for charge stored and retained in an organic field-effect transistor (OFET) memory device. Furthermore, diazafluorene derivatives possess a completely separate highest occupied molecular orbital/lowest unoccupied molecular orbital, which offers ideal hole and electron trapping sites. As charge storage elements, triphenylamine groups provide the hole trapping sites, while diazafluorene units provide the electron trapping sites and act as a hole blocking group to restrain the leakage of stored holes trapped in triphenylamine. The pentacene-based OFET memory device with solution-processing TPA(PDAF)3 shows a good hole-trapping ability, high hole trapping density (4.55 × 1012 cm-2), fast trapping speed (<20 ms), a large memory window (89 V), and a tunable ambipolar memory behavior. The optimized device shows a large ON/OFF current ratio (2.85 × 107), good charge retention (>104 s), and reliable endurance properties. This study suggests that diazafluorene based donor-acceptor small molecular elements have great promise for high-performance OFET memory.

Understanding M-ligand bonding and mer-/fac-isomerism in tris(8-hydroxyquinolinate) metallic complexes

Tris(8-hydroxyquinolinate) metallic complexes, Mq3, are one of the most important classes of organic semiconductor materials. Herein, the nature of the chemical bond in Mq3 complexes and its implications on their molecular properties were investigated by a combined experimental and computational approach. Various Mq3 complexes, resulting from the alteration of the metal and substitution of the 8-hydroxyquinoline ligand in different positions, were prepared. The mer-/fac-isomerism in Mq3 was explored by FTIR and NMR spectroscopy, evidencing that, irrespective of the substituent, mer- and fac-are the most stable molecular configurations of Al(iii) and In(iii) complexes, respectively. The relative M-ligand bond dissociation energies were evaluated experimentally by electrospray ionization tandem mass spectrometry (ESI-MS-MS), showing a non-monotonous variation along the group (Al > In > Ga). The results reveal a strong covalent character in M-ligand bonding, which allows for through-ligand electron delocalization, and explain the preferred molecular structures of Mq3 complexes as resulting from the interplay between bonding and steric factors. The mer-isomer reduces intraligand repulsions, being preferred for smaller metals, while the fac-isomer is favoured for larger metals where stronger covalent M-ligand bonds can be formed due to more extensive through-ligand conjugation mediated by metal "d" orbitals.

Detection of trapped charges in the blend films of polystyrene/SFDBAO electrets by electrostatic and Kelvin probe force microscopy

The charge trapping properties of the blend of polystyrene (PS) and a sterically hindered organic semiconductor SFDBAO (spiro[fluorene-9,7-dibenzo[c,h]acridin-5-one]) are investigated by electrostatic and Kelvin probe force microscopy (EFM and KPFM).

Microscopic and macroscopic characterization of the charging effects in SiC/Si nanocrystals/SiC sandwiched structures

Microscopic charge injection into the SiC/Si nanocrystals/SiC sandwiched structures through a biased conductive AFM tip is subsequently characterized by both electrostatic force microscopy and Kelvin probe force microscopy (KPFM). The charge injection and retention characteristics are found to be affected by not only the band offset at the Si nanocrystals/SiC interface but also the doping type of the Si substrate. On the other hand, capacitance-voltage (C-V) measurements investigate the macroscopic charging effect of the sandwiched structures with a thicker SiC capping layer, where the charges are injected from the Si substrates. The calculated macroscopic charging density is 3-4 times that of the microscopic one, and the possible reason is the underestimation of the microscopic charging density caused by the averaging effect and detection delay in the KPFM measurements.

Nanoscale quantification of charge injection and transportation process in Si-nanocrystal based sandwiched structure

Si nanocrystals are formed by using KrF pulsed laser crystallization of an amorphous SiC/ultrathin amorphous Si/amorphous SiC sandwiched structure. Electrons and holes are injected into Si nanocrystals via a biased conductive AFM tip and the carrier decay and transportation behaviours at the nanoscale are studied by joint characterization techniques of Kelvin probe force microscopy (KPFM) and conductive atomic force microscopy (CAFM). Quantification of the surface charge density is realized by solving the Poisson equation based on KPFM measurements. Besides, the asymmetric barrier height for electrons and holes is considered to play a dominant role in controlling the charge retention and transportation characteristics. The methodology developed in this work is promising for studying the charge injection and transportation process in other materials and structures at the nanoscale.