Chirality-dependent vapor-phase epitaxial growth and termination of single-wall carbon nanotubes

Evolution of catalyst design for controlled synthesis of chiral single-walled carbon nanotubes

Single-walled carbon nanotubes (SWCNTs) possess superb properties originating from their unique chiral structures. However, accurately controlling the structure of SWCNTs remains challenging due to the structural similarities of their chiral structures, which hinders their widespread application in various fields, particularly in electronics. In recent years, much effort has been devoted to preparing single chiral SWCNTs by adopting three constructive strategies, including growth condition control for structurally unstable liquid catalysts, employing stable solid catalyst design, and pre-synthesis of carbon seeds with a well-defined shape. This review comprehensively discusses the state-of-the-art developments in these approaches as well as their advantages and disadvantages. Moreover, insights into the key challenges and future directions are provided for acquiring chirally pure SWCNTs.

An extended model for chirality selection in single-walled carbon nanotubes

The chirality selective production of single-walled carbon nanotubes (SWCNTs) continues to represent one of the most important technological challenges. In this study, an extended model which considers all steps of the SWCNT growth process, including adsorption, decomposition, diffusion, and incorporation, is applied, for the first time, to obtain chirality selection in the SWCNT populations. We show that the dependence of the population distribution on chirality, defined as a product of the nucleation probability and the growth rate, has a volcano-shape. The model is in good agreement with the reported experimental studies and supports the results which show the surplus of near armchair or near zigzag SWCNTs. The present work emphasizes the role of the catalyst in chirality selection via optimization of chemisorption strength between the carbon species and the catalyst surface needed to achieve stable nucleation and fast growth rates. The obtained results can be used in catalyst designs to define the pathways towards the growth of SWCNTs with specific chiralities exhibiting distinguished electronic properties.

Molecular Evolutionary Growth of Ultralong Semiconducting Double-Walled Carbon Nanotubes

The self-assembling preparation accompanied with template auto-catalysis loop and the ability to gather energy, induces the appearance of chirality and entropy reduction in biotic systems. However, an abiotic system with biotic characteristics is of great significance but still missing. Here, it is demonstrated that the molecular evolution is characteristic of ultralong carbon nanotube preparation, revealing the advantage of chiral assembly through template auto-catalysis growth, stepwise-enriched chirality distribution with decreasing entropy, and environmental effects on the evolutionary growth. Specifically, the defective and metallic nanotubes perform inferiority to semiconducting counterparts, among of which the ones with double walls and specific chirality (n, m) are more predominant due to molecular coevolution. An explicit evolutionary trend for tailoring certain layer chirality is presented toward perfect near-(2n, n)-containing semiconducting double-walled nanotubes. These findings extend our conceptual understanding for the template auto-catalysis assembly of abiotic carbon nanotubes, and provide an inspiration for preparing chiral materials with kinetic stability by evolutionary growth.

Carbon nanotube transistors: Making electronics from molecules

Semiconducting carbon nanotubes are robust molecules with nanometer-scale diameters that can be used in field-effect transistors, from larger thin-film implementation to devices that work in conjunction with silicon electronics, and can potentially be used as a platform for high-performance digital electronics as well as radio-frequency and sensing applications. Recent progress in the materials, devices, and technologies related to carbon nanotube transistors is briefly reviewed. Emphasis is placed on the most broadly impactful advancements that have evolved from single-nanotube devices to implementations with aligned nanotubes and even nanotube thin films. There are obstacles that remain to be addressed, including material synthesis and processing control, device structure design and transport considerations, and further integration demonstrations with improved reproducibility and reliability; however, the integration of more than 10,000 devices in single functional chips has already been realized.

Synthesis, Sorting, and Applications of Single-Chirality Single-Walled Carbon Nanotubes

The synthesis of high-quality chirality-pure single-walled carbon nanotubes (SWCNTs) is vital for their applications. It is of high importance to modernize the synthesis processes to decrease the synthesis temperature and improve the quality and yield of SWCNTs. This review is dedicated to the chirality-selective synthesis, sorting of SWCNTs, and applications of chirality-pure SWCNTs. The review begins with a description of growth mechanisms of carbon nanotubes. Then, we discuss the synthesis methods of semiconducting and metallic conductivity-type and single-chirality SWCNTs, such as the epitaxial growth method of SWCNT ("cloning") using nanocarbon seeds, the growth method using nanocarbon segments obtained by organic synthesis, and the catalyst-mediated chemical vapor deposition synthesis. Then, we discuss the separation methods of SWCNTs by conductivity type, such as electrophoresis (dielectrophoresis), density gradient ultracentrifugation (DGC), low-speed DGC, ultrahigh DGC, chromatography, two-phase separation, selective solubilization, and selective reaction methods and techniques for single-chirality separation of SWCNTs, including density gradient centrifugation, two-phase separation, and chromatography methods. Finally, the applications of separated SWCNTs, such as field-effect transistors (FETs), sensors, light emitters and photodetectors, transparent electrodes, photovoltaics (solar cells), batteries, bioimaging, and other applications, are presented.

Recent Advances in Structure Separation of Single-Wall Carbon Nanotubes and Their Application in Optics, Electronics, and Optoelectronics

Structural control of single-wall carbon nanotubes (SWCNTs) with uniform properties is critical not only for their property modulation and functional design but also for applications in electronics, optics, and optoelectronics. To achieve this goal, various separation techniques have been developed in the past 20 years through which separation of high-purity semiconducting/metallic SWCNTs, single-chirality species, and even their enantiomers have been achieved. This progress has promoted the property modulation of SWCNTs and the development of SWCNT-based optoelectronic devices. Here, the recent advances in the structure separation of SWCNTs are reviewed, from metallic/semiconducting SWCNTs, to single-chirality species, and to enantiomers by several typical separation techniques and the application of the corresponding sorted SWCNTs. Based on the separation procedure, efficiency, and scalability, as well as, the separable SWCNT species, purity, and quantity, the advantages and disadvantages of various separation techniques are compared. Combined with the requirements of SWCNT application, the challenges, prospects, and development direction of structure separation are further discussed.

Kinetics-Controlled Growth of Metallic Single-Wall Carbon Nanotubes from CoRex Nanoparticles

The controlled growth of metallic single-wall carbon nanotubes (m-SWCNTs) is very important for the fabrication of high-performance interconnecting wires, transparent conductive electrodes, light and conductive fibers, etc. However, it has been extremely difficult to synthesize m-SWCNTs due to their lower abundance and higher chemical reactivity than semiconducting SWCNTs (s-SWCNTs). Here, we report the kinetically controlled growth of m-SWCNTs by manipulating their binding energy with the catalyst and promoting their growth rate. We prepared CoRe₄ nanoparticles with a hexagonal close-packed structure and an average size of ∼2.3 nm, which have a lower binding energy with m-SWCNTs than with s-SWCNTs. The selective growth of m-SWCNTs from the CoRe₄ catalyst was achieved by using a low concentration of carbon source feed at a relative low temperature of 760 °C. The m-SWCNTs had a narrow diameter distribution of 1.1 ± 0.3 nm, and their content was over 80%.

Metal Cluster Size-Dependent Activation Energies of Growth of Single-Chirality Single-Walled Carbon Nanotubes inside Metallocene-Filled Single-Walled Carbon Nanotubes

By combining in situ annealing and Raman spectroscopy measurements, the growth dynamics of nine individual-chirality inner tubes (8,8), (12,3), (13,1), (9,6), (10,4), (11,2), (11,1), (9,3) and (9,2) with diameters from ~0.8 to 1.1 nm are monitored using a time resolution of several minutes. The growth mechanism of inner tubes implies two successive stages of the growth on the carburized and purely metallic catalytic particles, respectively, which are formed as a result of the thermally induced decomposition of metallocenes inside the outer SWCNTs. The activation energies of the growth on carburized Ni and Co catalytic particles amount to 1.85–2.57 eV and 1.80–2.71 eV, respectively. They decrease monotonically as the tube diameter decreases, independent of the metal type. The activation energies of the growth on purely metallic Ni and Co particles equal 1.49–1.91 eV and 0.77–1.79 eV, respectively. They increase as the tube diameter decreases. The activation energies of the growth of large-diameter tubes (d_t = ~0.95–1.10 nm) on Ni catalyst are significantly larger than on Co catalyst, whereas the values of small-diameter tubes (d_t = ~0.80–0.95 nm) are similar. For both metals, no dependence of the activation energies on the chirality of inner tubes is observed.

Bandgap-Coupled Template Autocatalysis toward the Growth of High-Purity sp2 Nanocarbons

Extraordinary properties and great application potentials of carbon nanotubes (CNT) and graphene fundamentally rely on their large-scale perfect sp2 structure. Particularly for high-end applications, ultralow defect density and ultrahigh selectivity are prerequisites, for which metal-catalyzed chemical vapor deposition (CVD) is the most promising approach. Due to their structure and peculiarity, CNTs and graphene can themselves provide growth templates and nonlocal dual conductance, serving as template autocatalysts with tunable bandgap during the CVD. However, current growth kinetics models all focus on the external factors and edges. Here, the growth kinetics of sp2 nanocarbons is elaborated from the perspective of template autocatalysis and holistic electronic structure. After reviewing current growth kinetics, various representative works involving CVD growth of different sp2 nanocarbons are analyzed, to reveal their bandgap-coupled kinetics and resulting selective synthesis. Recent progress is then reviewed, which has demonstrated the interlocking between the atomic assembly rate and bandgap of CNTs, with an explicit volcano dependence whose peak would be determined by the environment. In addition, the topological protection for perfect sp2 structure and the defect-induced perturbation for the interlocking are discussed. Finally, the prospects for the kinetic selective growth of perfect nanocarbons are proposed.

Horizontal Single-Walled Carbon Nanotube Arrays: Controlled Synthesis, Characterizations, and Applications

Single-walled carbon nanotubes (SWNTs) emerge as a promising material to advance carbon nanoelectronics. However, synthesizing or assembling pure metallic/semiconducting SWNTs required for interconnects/integrated circuits, respectively, by a conventional chemical vapor deposition method or by an assembly technique remains challenging. Recent studies have shown significant scientific breakthroughs in controlled SWNT synthesis/assembly and applications in scaled field effect transistors, which are a critical component in functional nanodevices, thereby rendering the horizontal SWNT array an important candidate for innovating nanotechnology. This review provides a comprehensive analysis of the controlled synthesis, surface assembly, characterization techniques, and potential applications of horizontally aligned SWNT arrays. This review begins with the discussion of synthesis of horizontally aligned SWNTs with regulated direction, density, structure, and theoretical models applied to understand the growth results. Several traditional procedures applied for assembling SWNTs on target surface are also briefly discussed. It then discusses the techniques adopted to characterize SWNTs, ranging from electron/probe microscopy to various optical spectroscopy methods. Prototype applications based on the horizontally aligned SWNTs, such as interconnects, field effect transistors, integrated circuits, and even computers, are subsequently described. Finally, this review concludes with challenges and a brief outlook of the future development in this research field.

Chirality Pure Carbon Nanotubes: Growth, Sorting, and Characterization

Single-walled carbon nanotubes (SWCNTs) have been attracting tremendous attention owing to their structure (chirality) dependent outstanding properties, which endow them with great potential in a wide range of applications. The preparation of chirality-pure SWCNTs is not only a great scientific challenge but also a crucial requirement for many high-end applications. As such, research activities in this area over the last two decades have been very extensive. In this review, we summarize recent achievements and accumulated knowledge thus far and discuss future developments and remaining challenges from three aspects: controlled growth, postsynthesis sorting, and characterization techniques. In the growth part, we focus on the mechanism of chirality-controlled growth and catalyst design. In the sorting part, we organize and analyze existing literature based on sorting targets rather than methods. Since chirality assignment and quantification is essential in the study of selective preparation, we also include in the last part a comprehensive description and discussion of characterization techniques for SWCNTs. It is our view that even though progress made in this area is impressive, more efforts are still needed to develop both methodologies for preparing ultrapure (e.g., >99.99%) SWCNTs in large quantity and nondestructive fast characterization techniques with high spatial resolution for various nanotube samples.

Designing Catalysts for Chirality-Selective Synthesis of Single-Walled Carbon Nanotubes: Past Success and Future Opportunity

A major obstacle for the applications of single-walled carbon nanotubes (SWNTs) in electronic devices is their structural diversity, ending in SWNTs with diverse electrical properties. Catalytic chemical vapor deposition has shown great promise in directly synthesizing high-quality SWNTs with a high selectivity to specific chirality (n, m). During the growth process, the tube-catalyst interface plays crucial roles in regulating the SWNT nucleation thermodynamics and growth kinetics, ultimately governing the SWNT chirality distribution. Starting with the introduction of SWNT growth modes, this review seeks to extend the knowledge about chirality-selective synthesis by clarifying the energetically favored SWNT cap nucleation and the threshold step for SWNT growth, which describes how the tube-catalyst interface affects both the nucleus energy and the new carbon atom incorporation. Such understandings are subsequently applied to interpret the (n, m) specific growth achieved on a variety of templates, such as SWNT segments or predefined molecular seeds, transition metal (Fe, Co and Ni)-containing catalysts at low reaction temperatures, W-based alloy catalysts, and metal carbides at relatively high reaction temperatures. The up to date achievements on chirality-controlled synthesis of SWNTs is summarized and the remaining major challenges existing in the SWNT synthesis field are discussed.

VP, Sathian SP. Water flow in carbon nanotubes: the role of tube chirality

Flow rate of water in CNTs of different types.

Carbon Nanotubes and Related Nanomaterials: Critical Advances and Challenges for Synthesis toward Mainstream Commercial Applications

Advances in the synthesis and scalable manufacturing of single-walled carbon nanotubes (SWCNTs) remain critical to realizing many important commercial applications. Here we review recent breakthroughs in the synthesis of SWCNTs and highlight key ongoing research areas and challenges. A few key applications that capitalize on the properties of SWCNTs are also reviewed with respect to the recent synthesis breakthroughs and ways in which synthesis science can enable advances in these applications. While the primary focus of this review is on the science framework of SWCNT growth, we draw connections to mechanisms underlying the synthesis of other 1D and 2D materials such as boron nitride nanotubes and graphene.

Synthesis, purification, properties and characterization of sorted single-walled carbon nanotubes

Single-walled carbon nanotubes (SWCNTs) have attracted significant attention due to their outstanding mechanical, chemical and optoelectronic properties, which makes them promising candidates for use in a wide range of applications. However, as-produced SWCNTs have a wide distribution of various chiral species with different properties (i.e. electronic structures). In order to take full advantage of SWCNT properties, highly purified and well-separated SWCNTs are of great importance. Recent advances have focused on developing new strategies to effectively separate nanotubes into single-chirality and/or semiconducting/metallic species and integrating them into different applications. This review highlights recent progress in this cutting-edge research area alongside the enormous development of their identification and structural characterization techniques. A comprehensive review of advances in both controlled synthesis and post-synthesis separation methods of SWCNTs are presented. The relationship between the unique structure of SWCNTs and their intrinsic properties is also discussed. Finally, important future directions for the development of sorting and purification protocols for SWCNTs are provided.

Digital Isotope Coding to Trace the Growth Process of Individual Single-Walled Carbon Nanotubes

Single-walled carbon nanotubes (SWCNTs) are attracting increasing attention as an ideal material for high-performance electronics through the preparation of arrays of purely semiconducting SWCNTs. Despite significant progress in the controlled synthesis of SWCNTs, their growth mechanism remains unclear due to difficulties in analyzing the time-resolved growth of individual SWCNTs under practical growth conditions. Here we present a method for tracing the diverse growth profiles of individual SWCNTs by embedding digitally coded isotope labels. Raman mapping showed that, after various incubation times, SWCNTs elongated monotonically until their abrupt termination. Ex situ analysis offered an opportunity to capture rare chirality changes along the SWCNTs, which resulted in sudden acceleration/deceleration of the growth rate. Dependence on growth parameters, such as temperature and carbon concentration, was also traced along individual SWCNTs, which could provide clues to chirality control. Systematic growth studies with a variety of catalysts and conditions, which combine the presented method with other characterization techniques, will lead to further understanding and control of chirality, length, and density of SWCNTs.

Growth modes and chiral selectivity of single-walled carbon nanotubes

Chemical vapor deposition synthesis of single-walled carbon nanotubes, using an Fe catalyst, and alternating methane and carbon monoxide as carbon feedstocks, leads to the reversible formation of junctions between tubes of different diameters. Combined with an atomistic modeling of the tube/catalyst interface, this shows that the ratio of diameters of the tube and its seeding particle, denoting the growth mode, depends on the carbon fraction inside the catalyst. With carbon monoxide, nanoparticles are strongly carbon enriched, and tend to dewet the tube, in a perpendicular growth mode. Cross-checking our results with the available reports from the literature of the last decade strongly suggests that these latter conditions should favor the near armchair chiral selectivity observed empirically.

Chemical Vapor Deposition Growth and Applications of Two-Dimensional Materials and Their Heterostructures

Two-dimensional (2D) materials have attracted increasing research interest because of the abundant choice of materials with diverse and tunable electronic, optical, and chemical properties. Moreover, 2D material based heterostructures combining several individual 2D materials provide unique platforms to create an almost infinite number of materials and show exotic physical phenomena as well as new properties and applications. To achieve these high expectations, methods for the scalable preparation of 2D materials and 2D heterostructures of high quality and low cost must be developed. Chemical vapor deposition (CVD) is a powerful method which may meet the above requirements, and has been extensively used to grow 2D materials and their heterostructures in recent years, despite several challenges remaining. In this review of the challenges in the CVD growth of 2D materials, we highlight recent advances in the controlled growth of single crystal 2D materials, with an emphasis on semiconducting transition metal dichalcogenides. We provide insight into the growth mechanisms of single crystal 2D domains and the key technologies used to realize wafer-scale growth of continuous and homogeneous 2D films which are important for practical applications. Meanwhile, strategies to design and grow various kinds of 2D material based heterostructures are thoroughly discussed. The applications of CVD-grown 2D materials and their heterostructures in electronics, optoelectronics, sensors, flexible devices, and electrocatalysis are also discussed. Finally, we suggest solutions to these challenges and ideas concerning future developments in this emerging field.

Chirality-dependent growth of single-wall carbon nanotubes as revealed inside nano-test tubes

Growth dynamics of single-wall carbon nanotubes (SWCNTs) have been studied with nickelocene as a precursor encapsulated in the interior of template SWCNTs. By means of multi-laser Raman spectroscopy, growth curves of nine different SWCNTs, (8,8), (12,3), (13,1), (9,6), (10,4), (11,2), (11,1), (9,3) and (9,2), have been determined upon in situ annealing at various temperatures. The data reveal that the nanotubes grow through fast and slow reaction pathways with high and low activation energies, respectively. While the activation energy of the slow growth is independent of the nanotube's chiral vector, that of the fast growth exhibits a monotonic increase as the tube diameter reduces from ∼1.1 down to 0.8 nm and no dependency on the chiral angle, which can be attributed to the size-dependent properties of catalyst clusters. The chirality dependent catalytic growth properties exploited in this study provide the basis for a large-scale synthesis of single-chiral vector SWCNTs.

Effect of ammonia on chemical vapour deposition and carbon nanotube nucleation mechanisms

Chemical vapour deposition (CVD) growth of carbon nanotubes is currently the most viable method for commercial-scale nanotube production. However, controlling the 'chirality', or helicity, of carbon nanotubes during CVD growth remains a challenge. Recent studies have shown that adding chemical 'etchants', such as ammonia and water, to the feedstock gas can alter the diameter and chirality of nanotubes produced with CVD. To date, this strategy for chirality control remains sub-optimal, since we have a poor understanding of how these etchants change the CVD and nucleation mechanisms. Here, we show how ammonia alters the mechanism of methane CVD and single-walled carbon nanotube nucleation on iron catalysts, using quantum chemical molecular dynamics simulations. Our simulations reveal that ammonia is selectively activated by the catalyst, and this enables ammonia to play a dual role during methane CVD. Following activation, ammonia nitrogen removes carbon from the catalyst surface exclusively via the production of hydrogen (iso)cyanide, thus impeding the growth of extended carbon chains. Simultaneously, ammonia hydrogen passivates carbon dangling bonds, which impedes nanotube nucleation and promotes defect healing. Combined, these effects lead to slower, more controllable nucleation and growth kinetics.

Chirality-Controlled Synthesis and Applications of Single-Wall Carbon Nanotubes

Preparation of chirality-defined single-wall carbon nanotubes (SWCNTs) is the top challenge in the nanotube field. In recent years, great progress has been made toward preparing single-chirality SWCNTs through both direct controlled synthesis and postsynthesis separation approaches. Accordingly, the uses of single-chirality-dominated SWCNTs for various applications have emerged as a new front in nanotube research. In this Review, we review recent progress made in the chirality-controlled synthesis of SWCNTs, including metal-catalyst-free SWCNT cloning by vapor-phase epitaxy elongation of purified single-chirality nanotube seeds, chirality-specific growth of SWCNTs on bimetallic solid alloy catalysts, chirality-controlled synthesis of SWCNTs using bottom-up synthetic strategy from carbonaceous molecular end-cap precursors, etc. Recent major progresses in postsynthesis separation of single-chirality SWCNT species, as well as methods for chirality characterization of SWCNTs, are also highlighted. Moreover, we discuss some examples where single-chirality SWCNTs have shown clear advantages over SWCNTs with broad chirality distributions. We hope this review could inspire more research on the chirality-controlled preparation of SWCNTs and equally important inspire the use of single-chirality SWCNT samples for more fundamental studies and practical applications.

Water-Assisted Preparation of High-Purity Semiconducting (14,4) Carbon Nanotubes

Semiconducting single-walled carbon nanotubes (s-SWNTs) with diameters of 1.0-1.5 nm (with similar bandgap to crystalline silicon) are highly desired for nanoelectronics. Up to date, the highest reported content of s-SWNTs as-grown is ∼97%, which is still far below the daunting requirements of high-end applications. Herein, we report a feasible and green pathway to use H₂O vapor to modulate the structure of the intermetallic W₆Co₇ nanocrystals. By using the resultant W₆Co₇ nanocatalysts with a high percentage of (1 0 10) planes as structural templates, we realized the direct growth of s-SWNT with the purity of ∼99%, in which ∼97% is (14,4) tubes (diameter 1.29 nm). H₂O can also act as an environmentally friendly and facile etchant for eliminating metallic SWNTs, and the content of s-SWNTs was further improved to 99.8% and (14,4) tubes to 98.6%. High purity s-SWNTs with even bandgap determined by their uniform structure can be used for the exquisite applications in different fields.

Sorting Carbon Nanotubes

Sorting of single-wall carbon nanotubes by their electronic and atomic structures in liquid phases is reviewed in this chapter. We first introduce the sorting problem, and then provide an overview of several sorting methodologies, following roughly the chronological order of their development over the past 15 years or so. Major methods discussed include ion-exchange chromatography, density-gradient ultracentrifugation, selective extraction in organic solvents, gel chromatography, and aqueous two-phase extraction. A main focus of the review is on the common mechanisms underlining all sorting processes. We propose that differences in solvation among different nanotube species are the ultimate driving force of sorting, and we corroborate this proposal by presenting analysis on how the differences are realized in electronic-structure-based sorting and atomic-structure-based sorting. In the end, we offer some suggestions on future directions that may grow out of carbon nanotube sorting. In particular, the prospect of expanding the function of DNA/carbon nanotube hybrid to control inter-particle interactions both inside and outside the nanotube is discussed.

Horizontally aligned carbon nanotube arrays: growth mechanism, controlled synthesis, characterization, properties and applications

This review summarizes the growth mechanism, controlled synthesis, characterization, properties and applications of horizontally aligned carbon nanotube arrays.

Investigation of growth dynamics of carbon nanotubes

The synthesis of single-walled carbon nanotubes (SWCNTs) with defined properties is required for both fundamental investigations and practical applications. The revealing and thorough understanding of the growth mechanism of SWCNTs is the key to the synthesis of nanotubes with required properties. This paper reviews the current status of the research on the investigation of growth dynamics of carbon nanotubes. The review starts with the consideration of the peculiarities of the growth mechanism of carbon nanotubes. The physical and chemical states of the catalyst during the nanotube growth are discussed. The chirality selective growth of nanotubes is described. The main part of the review is dedicated to the analysis and systematization of the reported results on the investigation of growth dynamics of nanotubes. The studies on the revealing of the dependence of the growth rate of nanotubes on the synthesis parameters are reviewed. The correlation between the lifetime of catalyst and growth rate of nanotubes is discussed. The reports on the calculation of the activation energy of the nanotube growth are summarized. Finally, the growth properties of inner tubes inside SWCNTs are considered.

(n,m) Assignments of Metallic Single-Walled Carbon Nanotubes by Raman Spectroscopy: The Importance of Electronic Raman Scattering

In this work, we report an accurate and convenient method that can be used to assign the chirality of all metallic single-walled carbon nanotubes (M-SWNTs). This method is designed based on the electronic Raman scattering (ERS) features, which are resonantly enhanced at the corresponding excitonic transition energies (M_ii⁺ and M_ii^-). Using this method, we are able to accurately determine the electronic property M_ii with the resolution of a vibrational Raman spectroscopy (∼0.3 meV), which is significantly higher than that of the electronic spectroscopies (∼3 meV). We use the M_ii splitting value, which is found insensitive to environmental changes, as a universal criteria for (n,m) assignments in various environments. As an illustrative example, simply using a commercialized Raman spectrometer with two laser lines (1.959 and 2.330 eV), we are able to unambiguously assign 18 metallic chiralities with M₁₁ in the 1.6-2.3 eV range in our samples. This method provides an accurate database of M_ii's in a similar way as photoluminescence excitation spectroscopy does for S_ii's. It can facilitate further systematic studies on the properties of M-SWNTs with defined chirality.

Current Progress in the Chemical Vapor Deposition of Type-Selected Horizontally Aligned Single-Walled Carbon Nanotubes

Exciting electrical properties of single-walled carbon nanotubes show promise as a future class of electronic materials, yet the manufacturing challenges remain significant. The key challenges are to determine fabrication approaches for complex and flexible arrangements of nanotube devices that are reliable, rapid, and reproducible. Realizing regular array structures is an important step toward this goal. Considerable efforts have and are being made in this vein, although the progress to date is somewhat modest. However, there are reasons to be optimistic. Positive steps of being able to control not only the spatial location and diameter of the tubes but also their electronic type (chiral control) are being made. Two primary approaches are being exploited to address the challenges. Tube deposition techniques, on the one hand, and direct growth of the desired tube at the target location are being explored. While this review covers both approaches, the emphasis is on recent developments in the direct fabrication of type-selected horizontally aligned single-walled carbon nanotubes by chemical vapor deposition.

Templated Synthesis of Single-Walled Carbon Nanotubes with Specific Structure

Single-walled carbon nanotubes (SWNTs) have shown great potential in various applications attributed to their unique structure-dependent properties. Therefore, the controlled preparation of chemically and structurally pristine SWNTs is a crucial issue for their advanced applications (e.g., nanoelectronics) and has been a great challenge for two decades. Epitaxial growth from well-defined seeds has been shown to be a promising strategy to control the structure of SWNTs. Segments of carbon nanotubes, including short pipes from cutting of preformed nanotubes and caps from opening of fullerenes or cyclodehydrogenation of polycyclic hydrocarbon precursors, have been used as the seeds to grow SWNTs. Single-chirality SWNTs were obtained with both presorted chirality-pure SWNT segments and end caps obtained from polycyclic hydrocarbon molecules with designed structure. The main challenges of nanocarbon-segment-seeded processes are the stability of the seeds, yield, and efficiency. Catalyst-mediated SWNT growth is believed to be more efficient. The composition and morphology of the catalyst nanoparticles have been widely reported to affect the chirality distribution of SWNTs. However, chirality-specific SWNT growth is hard to achieve by alternating catalysts. The specificity of enzyme-catalyzed reactions brings us an awareness of the essentiality of a unique catalyst structure for the chirality-selective growth of SWNTs. Only catalysts with the desired atomic arrangements in their crystal planes can act as structural templates for chirality-specific growth of SWNTs. We have developed a new family of catalysts, tungsten-based intermetallic compounds, which have high melting points and very special crystal structures, to facilitate the growth of SWNTs with designed chirality. By the use of W6Co7 catalysts, (12,6) SWNTs were directly grown with purity higher than 92%. Both high-resolution transmission electron microscopy measurements and density functional theory simulations show that the selective growth of (12,6) tubes is due to a good structural match between the carbon atom arrangement around the nanotube circumference and the metal atom arrangement of (0 0 12) planes in the catalyst. Similarly, (16,0) SWNTs exhibit a good structural match to the (116) planes of the W6Co7 catalyst. By optimization of the chemical vapor deposition (CVD) conditions, zigzag (16,0) SWNTs, which are generally known as a kinetically unfavorable species in CVD growth, were obtained with a purity of ∼80%. Generally speaking, the chirality-specific growth of SWNTs is realized by the cooperation of two factors: the structural match between SWNTs and the catalysts makes the growth of SWNTs with specific chirality thermodynamically favorable, and further manipulation of the CVD conditions results in optimized growth kinetics for SWNTs with this designed chirality. We expect that this advanced epitaxial growth strategy will pave the way for the ultimate goal of chirality-specified growth of SWNTs and will also be applicable in the controlled preparation of other nanomaterials.

A phenomenological model for selective growth of semiconducting single-walled carbon nanotubes based on catalyst deactivation

A method for the selective semiconducting single-walled carbon nanotube (SWCNT) growth over a continuous range from 67% to 98%, within the diameter range of 0.8-1.2 nm, by the use of a "catalyst conditioning process" prior to growth is reported. Continuous control revealed an inverse relationship between the selectivity and the yield as evidenced by a 1000-times difference in yield between the highest selectivity and non-selectivity. Further, these results show that the selectivity is highly sensitive to the presence of a precise concentration of oxidative and reductive gases (i.e. water and hydrogen), and the highest selectivity occurred along the border between the conditions suitable for high yield and no-growth. Through these results, a phenomenological model has been constructed to explain the inverse relationship between yield and selectivity based on catalyst deactivation. We believe our model to be general, as the fundamental mechanisms limiting selective semiconducting SWCNT growth are common to the previous reports of limited yield.

Recent Progress in Obtaining Semiconducting Single-Walled Carbon Nanotubes for Transistor Applications

High purity semiconducting single-walled carbon nanotubes (s-SWCNTs) with a narrow diameter distribution are required for high-performance transistors. Achieving this goal is extremely challenging because the as-grown material contains mixtures of s-SWCNTs and metallic- (m-) SWCNTs with wide diameter distributions, typically inadequate for integrated circuits. Since 2000, numerous ex situ methods have been proposed to improve the purity of the s-SWCNTs. The majority of these techniques fail to maintain the quality and integrity of the s-SWCNTs with a few notable exceptions. Here, the progress in realizing high purity s-SWCNTs in as-grown and post-processed materials is highlighted. A comparison of transistor parameters (such as on/off ratio and field-effect mobility) obtained from test structures establishes the effectiveness of various methods and suggests opportunities for future improvements.

Quantum Chemical Simulation of Carbon Nanotube Nucleation on Al2O3 Catalysts via CH4 Chemical Vapor Deposition

We present quantum chemical simulations demonstrating how single-walled carbon nanotubes (SWCNTs) form, or "nucleate", on the surface of Al2O3 nanoparticles during chemical vapor deposition (CVD) using CH4. SWCNT nucleation proceeds via the formation of extended polyyne chains that only interact with the catalyst surface at one or both ends. Consequently, SWCNT nucleation is not a surface-mediated process. We demonstrate that this unusual nucleation sequence is due to two factors. First, the π interaction between graphitic carbon and Al2O3 is extremely weak, such that graphitic carbon is expected to desorb at typical CVD temperatures. Second, hydrogen present at the catalyst surface actively passivates dangling carbon bonds, preventing a surface-mediated nucleation mechanism. The simulations reveal hydrogen's reactive chemical pathways during SWCNT nucleation and that the manner in which SWCNTs form on Al2O3 is fundamentally different from that observed using "traditional" transition metal catalysts.

Growing Zigzag (16,0) Carbon Nanotubes with Structure-Defined Catalysts

The growth of zigzag single-walled carbon nanotubes (SWNTs) is most challenging among all types of SWNTs, with the highest reported selectivity of ∼7%. Here we realized the dominant growth of (16,0) tubes at the abundance near ∼80% by using intermetallic W6Co7 catalysts containing plenty of (1 1 6) planes together with optimizing the growth conditions. These (1 1 6) planes may act as the structure templates for (16,0) SWNTs due to the geometrical match between the open end of the (16,0) tube and the atomic arrangements of the (1 1 6) planes in W6Co7. Using catalysts with designed structure as solid state template at suitable kinetic conditions offers a strategy for selective growth of zigzag SWNTs.

Insights into carbon nanotube and graphene formation mechanisms from molecular simulations: a review

The discovery of carbon nanotubes (CNTs) and graphene over the last two decades has heralded a new era in physics, chemistry and nanotechnology. During this time, intense efforts have been made towards understanding the atomic-scale mechanisms by which these remarkable nanostructures grow. Molecular simulations have made significant contributions in this regard; indeed, they are responsible for many of the key discoveries and advancements towards this goal. Here we review molecular simulations of CNT and graphene growth, and in doing so we highlight the many invaluable insights gained from molecular simulations into these complex nanoscale self-assembly processes. This review highlights an often-overlooked aspect of CNT and graphene formation-that the two processes, although seldom discussed in the same terms, are in fact remarkably similar. Both can be viewed as a 0D → 1D → 2D transformation, which converts carbon atoms (0D) to polyyne chains (1D) to a complete sp(2)-carbon network (2D). The difference in the final structure (CNT or graphene) is determined only by the curvature of the catalyst and the strength of the carbon-metal interaction. We conclude our review by summarizing the present shortcomings of CNT/graphene growth simulations, and future challenges to this important area.

Nearly exclusive growth of small diameter semiconducting single-wall carbon nanotubes from organic chemistry synthetic end-cap molecules

The inability to synthesize single-wall carbon nanotubes (SWCNTs) possessing uniform electronic properties and chirality represents the major impediment to their widespread applications. Recently, there is growing interest to explore and synthesize well-defined carbon nanostructures, including fullerenes, short nanotubes, and sidewalls of nanotubes, aiming for controlled synthesis of SWCNTs. One noticeable advantage of such processes is that no metal catalysts are used, and the produced nanotubes will be free of metal contamination. Many of these methods, however, suffer shortcomings of either low yield or poor controllability of nanotube uniformity. Here, we report a brand new approach to achieve high-efficiency metal-free growth of nearly pure SWCNT semiconductors, as supported by extensive spectroscopic characterization, electrical transport measurements, and density functional theory calculations. Our strategy combines bottom-up organic chemistry synthesis with vapor phase epitaxy elongation. We identify a strong correlation between the electronic properties of SWCNTs and their diameters in nanotube growth. This study not only provides material platforms for electronic applications of semiconducting SWCNTs but also contributes to fundamental understanding of the growth mechanism and controlled synthesis of SWCNTs.

One-step and low-temperature synthesis of carbon nanotubes with no post treatment and high purity

A new strategy for the synthesis of carbon nanotubes without any catalyst via the reaction between difluorocarbene (CF₂) radicals generated from a precursor (hexafluoropropylene oxide) and porous silicon nanowire arrays at low temperature is reported in this study.

Self-aligned Cu etch mask for individually addressable metallic and semiconducting carbon nanotubes

Two means to achieve high yield of individually addressable single-walled carbon nanotubes (CNTs) are developed and examined. The first approach matches the effective channel width and the density of horizontally aligned CNTs. This method can provide single CNT devices and also allows control over the average number of CNTs per channel. The second and a more deterministic approach uses self-aligned Cu-filled trenches formed in a photoresist (after Joule heating of the underlying CNT) to protect and obtain a large number of single CNT devices. Unlike electrical breakdown methods, which preserve the least conducting CNT and can leave behind CNT fragments, our approach allows the selection of the single most conducting metallic CNT from an array of as-grown CNTs with average resistance ∼14 times lower than that of as-fabricated single metallic CNTs. This method can also be used to select the best semiconducting CNT from an array and yields, on average, devices that are 15 times more conductive with 40 times higher ON/OFF ratio than those selected through electrical breakdown alone.

Growth of semiconducting single-walled carbon nanotubes by using ceria as catalyst supports

The growth of semiconducting single-walled carbon nanotubes (s-SWNTs) on flat substrates is essential for the application of SWNTs in electronic and optoelectronic devices. We developed a flexible strategy to selectively grow s-SWNTs on silicon substrates using a ceria-supported iron or cobalt catalysts. Ceria, which stores active oxygen, plays a crucial role in the selective growth process by inhibiting the formation of metallic SWNTs via oxidation. The so-produced ultralong s-SWNT arrays are immediately ready for building field effect transistors.