Strain dynamics of ultrathin VO₂ film grown on TiO₂ (001) and the associated phase transition modulation

Dimension-Controlled VO2 Film for Optoelectronic Logic Gates and Information Encryption

As the fields of photonics and information technology develop, a lot of novel applications based on VO2 material, such as optoelectronic computing and information encryption, have been developed. While the performance of these devices was not only closely associated with the VO2 phase transition properties but also depended on their dimensional characteristics. In the current study, we conducted the dimension-controlled vanadium dioxide (VO2) film growth, resulting in the epitaxial 2-dimensional (2D) VO2 film and well-distributed 3-dimensional (3D) VO2 crystal film deposition, respectively. It was revealed that, unlike the 2D film, the pronounced localized surface plasmon resonance dominated the near-infrared spectrum across the phase transition for the 3D VO2 film due to the naturally formed meta-surface structure, which showed a transmittance valley in the infrared spectrum after metallization. Based on this distinct infrared spectrum feature in the 3D VO2 film, we proposed an optoelectronic logic gate controlled by the input voltage and the probing Vis/IR light. By detecting the transmittance states of the probing light with different wavelengths, we achieved multistate encoding functions and demonstrated the information encryption application. This new conception device also showed great potential for some other applications such as optoelectronic coupled computing, information encryption, and optical near-field sensing computing.

Epitaxy of Monoclinic VO2 on Large-Misfit 3m Template Enabled by a Metastable Interfacial Layer

We report the epitaxial growth of a monoclinic VO2 thin film on the CoFe2O4(111) template, assisted by an interfacial layer of the metastable orthorhombic phase. The interface between orthorhombic VO2 and CoFe2O4 is atomically sharp without noticeable interfacial diffusion. The (010)-faceted orthorhombic VO2 layer is lattice-matched to both the CoFe2O4(111) template and the monoclinic phase, although they have different surface symmetries. The occurrence of an orthorhombic VO2 thin layer significantly lowers the in-plane misfit strains of the monoclinic VO2 epilayer, along both the [100] and [001] axes. Our first-principles calculations confirm that the low-misfit orthorhombic VO2 is preferred on CoFe2O4(111) over the large-misfit monoclinic phase, at the initial growth stage. Additionally, upon increasing the film thickness to ∼8 nm, the orthorhombic phase is no longer favored, and the bulk stable monoclinic VO2 appears to minimize the free energy of the system. Moreover, we show that the metal-to-insulator transition of our VO2 epilayer can be efficiently triggered by both the temperature and Joule self-heating effect.

Crystallographic Pathways to Tailoring Metal-Insulator Transition through Oxygen Transport in VO2

The metal-insulator (MI) transition of vanadium dioxide (VO2) is effectively modulated by oxygen vacancies, which decrease the transition temperature and insulating resistance. Oxygen vacancies in thin films can be driven by oxygen transport using electrochemical potential. This study delves into the role of crystallographic channels in VO2 in facilitating oxygen transport and the subsequent tuning of electrical properties. A model system is designed with two types of VO2 thin films: (100)- and (001)-oriented, where channels align parallel and perpendicular to the surface, respectively. Growing an oxygen-deficient TiO2 layer on these VO2 films prompted oxygen transport from VO2 to TiO2. Notably, in (001)-VO2 film, where oxygen ions move along the open channels, the oxygen migration deepens the depleted region beyond that in (100)-VO2, leading to more pronounced changes in metal-insulator transition behaviors. The findings emphasize the importance of understanding the intrinsic crystal structure, such as channel pathways, in controlling ionic defects and customizing electrical properties for applications.

Reconfigurable Resistive Switching in VO2/La0.7Sr0.3MnO3/Al2O3 (0001) Memristive Devices for Neuromorphic Computing

The coexistence of nonvolatile and volatile switching modes in a single memristive device provides flexibility to emulate both neuronal and synaptic functions in the brain. Furthermore, such a device structure may eliminate the need for additional circuit elements such as transistor-based selectors, enabling low-power consumption and high-density device integration in fully memristive spiking neural networks. In this work, we report dual resistive switching (RS) modes in VO2/La0.7Sr0.3MnO3 (LSMO) bilayer memristive devices. Specifically, the nonvolatile RS is driven by the movement of oxygen vacancies (Vo) at the VO2/LSMO interface and requires a higher biasing voltage, whereas the volatile RS is controlled by the metal-insulator transition (MIT) of VO2 under a lower biasing voltage. The simple device structure is electrically driven between the two RS modes and thus can operate as a one selector-one resistor (1S1R) cell, which is a desirable feature in memristive crossbar arrays to avoid the sneak-path current issue. The RS modes are found to be stable and repeatable and can be reconfigured by exploiting the interfacial and phase transition properties, and thus, they hold great promise for applications in memristive neural networks and neuromorphic computing.

Effects of oxygen vacancies and interfacial strain on the metal-insulator transition of VO2 nanobeams

The role of oxygen vacancies and interfacial strain on the metal-insulator transition (MIT) behavior of high-quality VO2 nanobeams (NBs) synthesized on SiO2/Si substrates employing V2O5 as a precursor has been investigated in this research. Selective oxygen vacancies have been generated by argon plasma irradiation. The MIT is progressively suppressed as the duration of plasma processing increases; in addition, the temperature of MIT (TMIT) drops by up to 95 K relative to the pristine VO2 NBs. Incorporating oxygen vacancies into VO2 may increase its electron concentration, which might shift the Fermi levels upward, strengthen the electronic orbital overlap of the V-V chains, and further stabilize the metallic phase at lower temperatures, based on first-principles calculations. Furthermore, in order to evaluate the influence of substrate-induced strain in our situation, the MIT in two distinct types of VO2 NB samples is examined without metal contacts by using the distinctive light scattering characteristics of the metal (M) and insulator (I) phases (i.e., M/I domains) by optical microscopy. It is found that the domain structures in the "clamped" NBs persisted up to ∼453 K, while the "released" NBs (transferred to a new substrate) did not exhibit any domain structures and turned into an entirely M phase with a dark contrast above ∼348 K. When combined with first-principles calculations, the electronic orbital occupancy in the rutile phase contributes to explaining the interfacial strain-induced modulation of MIT. The current findings shed light on how interfacial strain and oxygen vacancies impact MIT behavior. It also suggests several types of control strategies for MIT in VO2 NBs, which are essential for a broader spectrum of VO2 NB applications.

Harnessing the Metal-Insulator Transition of VO2 in Neuromorphic Computing

Future-generation neuromorphic computing seeks to overcome the limitations of von Neumann architectures by colocating logic and memory functions, thereby emulating the function of neurons and synapses in the human brain. Despite remarkable demonstrations of high-fidelity neuronal emulation, the predictive design of neuromorphic circuits starting from knowledge of material transformations remains challenging. VO2 is an attractive candidate since it manifests a near-room-temperature, discontinuous, and hysteretic metal-insulator transition. The transition provides a nonlinear dynamical response to input signals, as needed to construct neuronal circuit elements. Strategies for tuning the transformation characteristics of VO2 based on modification of material properties, interfacial structure, and field couplings, are discussed. Dynamical modulation of transformation characteristics through in situ processing is discussed as a means of imbuing synaptic function. Mechanistic understanding of site-selective modification; external, epitaxial, and chemical strain; defect dynamics; and interfacial field coupling in modifying local atomistic structure, the implications therein for electronic structure, and ultimately, the tuning of transformation characteristics, is emphasized. Opportunities are highlighted for inverse design and for using design principles related to thermodynamics and kinetics of electronic transitions learned from VO2 to inform the design of new Mott materials, as well as to go beyond energy-efficient computation to manifest intelligence.

Multiphysical Field Modulated VO2 Device for Information Encryption

In the information explosion society, information security is highly demanded in the practical application, which raised a surge of interest in designing secure and reliable information transmission channels based on the inherent properties of emerging devices. Here, an innovative strategy to achieve the data encryption and reading during the data confidential transmission based on VO₂ device is proposed. Owing to the specific insulator-to-metal transition property of VO₂ , the phase transitions between the insulator and metallic states are modulated by the combination of electric field, temperature, and light radiation. These external stimulus-induced phase diagram is directly associated with the defined VO₂ device, which are applicable for control the "0" or "1" electrical logic state for the information encryption. A prototype device is fabricated on an epitaxial VO₂ film, which displayed a unique data encryption function with excellent stability. The current study not only demonstrated a multiphysical field-modulated VO₂ device for information encryption, but also supplied some clues for functional devices applications in other correlated oxide materials.

Impact of the uniaxial strain on terahertz modulation characteristics in flexible epitaxial VO2 film across the phase transition

Exploring flexible electronics is on the verge of innovative breakthroughs in terahertz (THz) communication technology. Vanadium dioxide (VO₂) with insulator-metal transition (IMT) has excellent application potential in various THz smart devices, but the associated THz modulation properties in the flexible state have rarely been reported. Herein, we deposited an epitaxial VO₂ film on a flexible mica substrate via pulsed-laser deposition and investigated its THz modulation properties under different uniaxial strains across the phase transition. It was observed that the THz modulation depth increases under compressive strain and decreases under tensile strain. Moreover, the phase-transition threshold depends on the uniaxial strain. Particularly, the rate of the phase transition temperature depends on the uniaxial strain and reaches approximately 6 °C/% in the temperature-induced phase transition. The optical trigger threshold in laser-induced phase transition decreased by 38.9% under compressive strain but increased by 36.7% under tensile strain, compared to the initial state without uniaxial strain. These findings demonstrate the uniaxial strain-induced low-power triggered THz modulation and provide new insights for applying phase transition oxide films in THz flexible electronics.

Quantitative spatial mapping of distorted state phases during the metal-insulator phase transition for nanoscale VO2 engineering

Vanadium dioxide (VO₂) material, known for changing physical properties due to metal-insulator transition (MIT) near room temperature, has been reported to undergo a phase change depending on the strain. This fact can be a significant problem for nanoscale devices in VO₂, where the strain field covers a large area fraction, spatially non-uniform, and the amount of strain can vary during the MIT process. Direct measurement of the strain field distribution during MIT is expected to establish a methodology for material phase identification. We have demonstrated the effectiveness of geometric phase analysis (GPA), high-resolution transmission electron microscopy techniques, and transmission electron diffraction (TED). The GPA images show that the nanoregions of interest are under tensile strain conditions of less than 0.4% as well as a compressive strain of about 0.7% (Rutile phase VO₂[100] direction), indicating that the origin of the newly emerged TED spots in MIT contains a triclinic phase. This study provides a substantial understanding of the strain-temperature phase diagram and strain engineering strategies for effective phase management of nanoscale VO₂.

Anionic Flow Valve Across Oxide Heterointerfaces by Remote Electron Doping

As an analogue of charged electron flows, the ionic flow could be controlled by the electronic band alignment due to the ambipolar nature of diffusion in the ionic crystal. Here, we demonstrate the active control of the anionic diffusion across heterointerfaces through remote electron doping in the capping layers. In contrast to the spontaneous ionic flux from the underlying VO₂ layers to the undoped TiO₂ capping layers, the activated Nb dopants in the TiO₂ capping layers substantially restrict the ionic flux, despite identical growth conditions. The increase of Fermi level by Nb donors in TiO₂ prevents electron flux from being generated across the interfaces by the heightening of a Schottky barrier; this electron shortage generates a kinetic close valve for the flow of negatively charged oxygen ions. Thus, these results demonstrate the importance of electron supply on charged ionic flow, thereby suggesting an unprecedented strategy for ionic-defect-induced emergent properties at interfaces.

Embedded metallic nanoparticles facilitate metastability of switchable metallic domains in Mott threshold switches

Mott threshold switching, which is observed in quantum materials featuring an electrically fired insulator-to-metal transition, calls for delicate control of the percolative dynamics of electrically switchable domains on a nanoscale. Here, we demonstrate that embedded metallic nanoparticles (NP) dramatically promote metastability of switchable metallic domains in single-crystal-like VO₂ Mott switches. Using a model system of Pt-NP-VO₂ single-crystal-like films, interestingly, the embedded Pt NPs provide 33.3 times longer ‘memory’ of previous threshold metallic conduction by serving as pre-formed ‘stepping-stones’ in the switchable VO₂ matrix by consecutive electical pulse measurement; persistent memory of previous firing during the application of sub-threshold pulses was achieved on a six orders of magnitude longer timescale than the single-pulse recovery time of the insulating resistance in Pt-NP-VO₂ Mott switches. This discovery offers a fundamental strategy to exploit the geometric evolution of switchable domains in electrically fired transition and potential applications for non-Boolean computing using quantum materials.

Control of percolative dynamics of metal and insulator domains during electrically triggered insulator-metal transition underlies applications in energy-efficient switches. Jo et al. show that embedded metallic nanoparticles enhance the metastability and memory effects of metallic domains in VO₂ switches.

Triple-Wavelength Lasing with a Stabilized β-LaBSiO5:Nd3+ Crystal

Multi-wavelength lasers, especially the triple-wavelength laser around 1060 nm, could be produced by the ⁴F_3/2 → ⁴I_11/2 transition of Nd³⁺ and present numerous challenges and opportunities in the field of optoelectronics. The Nd³⁺-doped high-temperature phase of LaBSiO₅ (β-LBSO) is an ideal crystal to produce triple-wavelength lasers; however, the crystal growth is challenging because of the phase transition from β-LBSO to low-temperature phase (α-LBSO) at 162 °C. This phase transition is successfully suppressed when the doping content of Nd³⁺ is larger than 6.3 at. %, and the Nd³⁺-doped β-LBSO is stable at room temperature. The local disorder of BO₄ tetrahedra due to Nd³⁺ doping is essential to the stabilization of β-LBSO. For the first time, the β-LBSO:8%Nd³⁺ crystal with a dimension of 1.8 × 1.8 × 1.8 cm³ is obtained through the top-seeded solution method. The crystal shows strong optical absorption in the range of 785-815 nm, matching well with the commercial laser diode pumping source. The optical emission of ⁴F_3/2 → ⁴I_11/2 splits into four peaks with the highest optical emission cross section of 2.14 × 10^-20 cm² at 1068 nm. The continuous-wave triple-wavelength generation of coherent light at 1047, 1071, and 1092 nm is achieved with the highest output power of 235 mW and efficiency of 12.1%.

The Role of Local DFT+U Minima in the First-Principles Modeling of the Metal-Insulator Transition in Vanadium Dioxide

The DFT+U method is frequently employed to improve the first-principles description of strongly correlated materials. However, it is prone to deliver metastable electronic minima. While these local minima of the DFT+U method are often considered to be computational artifacts, their physical meaning and relationship to true excited states remains unclear. In this work, the possibility of theoretically modeling transformations in the solid state that require thermal or optical excitations of electrons is explored, taking into account the metastable states of the computationally undemanding DFT+U formalism. For this purpose, we choose to examine the example of the VO₂ metal-insulator transition. Metastable states that are located on different electronic potential energy surfaces are found to correspond to experimentally observed VO₂ phases. The identified metastable electronic states can be used to model the collapse of the VO₂ band gap at elevated temperatures and upon photoexcitation as well as other monoclinic-monoclinic phase transformations. The results suggest that local DFT+U minima can indeed carry physical meaning, while they remain under-reported in theoretical literature on transition metal oxides like VO₂.

Active and Smart Terahertz Electro-Optic Modulator Based on VO2 Structure

Modulating terahertz (THz) waves actively and smartly through an external field is highly desired in the development of THz spectroscopic devices. Here, we demonstrate an active and smart electro-optic THz modulator based on a strongly correlated electron oxide vanadium dioxide (VO2). With milliampere current excitation on the VO2 thin film, the transmission, reflection, absorption, and phase of THz waves can be modulated efficiently. In particular, the antireflection condition can be actively achieved and the modulation depth reaches 99.9%, accompanied by a 180° phase switching. Repeated and current scanning experiments confirm the high stability and multibit modulation of this electro-optic modulation. Most strikingly, by utilizing a feedback loop of "THz-electro-THz" geometry, a smart electro-optic THz control is realized. For instance, the antireflection condition can be stabilized precisely no matter what the initial condition is and how the external environment changes. The proposed electro-optic THz modulation method, taking advantage of strongly correlated electron material, opens up avenues for the realization of THz smart devices.

Octahedral Symmetry Modification Induced Orbital Occupancy Variation in VO2

Octahedral symmetry is one of the parameters to tune the functional properties of complex oxides. VO₂, a complex oxide with a 3d¹ electronic system, exhibits an insulator-metal transition (IMT) near room temperature (∼68 °C), accompanying a change in the octahedral structure from asymmetrical to symmetrical. However, the role of octahedral symmetry in VO₂ on the IMT characteristics is unclear. Crystal and electronic structure analyses combined with density-functional-theory calculations showed the bandwidth-controlled IMT characteristics of monoclinic VO₂ with high octahedral symmetry. The expanded apical V-O length for a high octahedral symmetry of a VO₂ film increased the bandwidth of the conduction band by depressing V 3d-O 2p hybridization. As a result, the interdimer hopping energy increased and thereby decreased the IMT temperature, although the short V-V chain enhanced electron correlation. These findings suggest that octahedral symmetry can control the IMT characteristics of VO₂ by changing the orbital occupancy.

Voltage triggered near-infrared light modulation using VO2 thin film

Development of compact and fast modulators of infrared light has garnered strong research interests in recent years due to their potential applications in communication, imaging, and sensing. In this study, electric field induced fast modulation near-infrared light caused by phase change in VO₂ thin films grown on GaN suspended membranes has been reported. It was observed that metal insulator transition caused by temperature change or application of electric field, using an interdigitated finger geometry, resulted in 7% and 14% reduction in transmitted light intensity at near-infrared wavelengths of 790 and 1550 nm, respectively. Near-infrared light modulation has been demonstrated with voltage pulse widths down to 300 µs at 25 V magnitude. Finite element simulations performed on the suspended membrane modulator indicate a combination of the Joule heating and electric field is responsible for the phase transition.

Photoassisted Electron-Ion Synergic Doping Induced Phase Transition of n-VO2/p-GaN Thin-Film Heterojunction

As a typical correlated metal oxide, vanadium dioxide (VO₂) shows specific metal-insulator transition (MIT) properties and demonstrates great potential applications in ultrafast optoelectronic switch, resistive memory, and neuromorphic devices. Effective control of the MIT process is essential for improving the device performance. In the current study, we have first proposed a photoassisted ion-doping method to modulate the phase transition of the VO₂ layer based on the photovoltaic effect and electron-ion synergic doping in acid solution. Experimental results show that, for the prepared n-VO₂/p-GaN nanojunction, this photoassisted strategy can effectively dope the n-VO₂ layer by H⁺, Al³⁺, or Mg²⁺ ions under light radiation and trigger consecutive insulator-metal-insulator transitions. If combined with standard lithography or electron beam etching processes, selective doping with nanoscale size area can also be achieved. This photoassisted doping method not only shows a facile route for MIT modulation via a doping route under ambient conditions but also supplies some clues for photosensitive detection in the future.

Vanadium Dioxide–Iridium Composite Development: Specific Near Infrared Surface Plasmon Resonance

This work serves as a roadmap for the development of a Vanadium dioxide (VO2)–Iridium composite based on the self-assembly of closely packed colloidal polystyrene microspheres (P-spheres) coupled with a Pulsed Laser Deposition (PLD) process. The self-assembly of a monolayer of PS is performed on an Al2O3-c substrate, using an adapted Langmuir–Blodgett (LB) process. Then, on the substrate covered with P-spheres, a 50-nanometer Iridium layer is deposited by PLD. The Iridium deposition is followed by the removal of PS with acetone, revealing an array of triangular shaped metallic elements formed on the underlaying substrate. In a last deposition step, 50-, 100- and 200-nanometer thin films of VO2 are deposited by PLD on top of the substrates covered with the Iridium quasi-triangles, forming a composite. Adapting the size of the P-spheres leads to control of both the size of the Iridium micro-triangle and, consequently, the optical transmittance of the composite. Owing to their shape and size the Iridium micro-triangles exhibit localized surface plasmon resonance (LSPR) characterized by a selective absorption of light. Due to the temperature dependent properties of VO2, the LSPR properties of the composite can be changeable and tunable.

Dynamic Manipulation of THz Waves Enabled by Phase-Transition VO2 Thin Film

The reversible and multi-stimuli responsive insulator-metal transition of VO2, which enables dynamic modulation over the terahertz (THz) regime, has attracted plenty of attention for its potential applications in versatile active THz devices. Moreover, the investigation into the growth mechanism of VO2 films has led to improved film processing, more capable modulation and enhanced device compatibility into diverse THz applications. THz devices with VO2 as the key components exhibit remarkable response to external stimuli, which is not only applicable in THz modulators but also in rewritable optical memories by virtue of the intrinsic hysteresis behaviour of VO2. Depending on the predesigned device structure, the insulator-metal transition (IMT) of VO2 component can be controlled through thermal, electrical or optical methods. Recent research has paid special attention to the ultrafast modulation phenomenon observed in the photoinduced IMT, enabled by an intense femtosecond laser (fs laser) which supports "quasi-simultaneous" IMT within 1 ps. This progress report reviews the current state of the field, focusing on the material nature that gives rise to the modulation-allowed IMT for THz applications. An overview is presented of numerous IMT stimuli approaches with special emphasis on the underlying physical mechanisms. Subsequently, active manipulation of THz waves through pure VO2 film and VO2 hybrid metamaterials is surveyed, highlighting that VO2 can provide active modulation for a wide variety of applications. Finally, the common characteristics and future development directions of VO2-based tuneable THz devices are discussed.

The morphology of VO2/TiO2(001): terraces, facets, and cracks

Vanadium dioxide (VO₂) features a pronounced, thermally-driven metal-to-insulator transition at 340 K. Employing epitaxial stress on rutile \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\text{TiO}_{2}(001)$$\end{document}TiO2(001) substrates, the transition can be tuned to occur close to room temperature. Striving for applications in oxide-electronic devices, the lateral homogeneity of such samples must be considered as an important prerequisite for efforts towards miniaturization. Moreover, the preparation of smooth surfaces is crucial for vertically stacked devices and, hence, the design of functional interfaces. Here, the surface morphology of \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\text{VO}_2/\text{TiO}_2(001)$$\end{document}VO2/TiO2(001) films was analyzed by low-energy electron microscopy and diffraction as well as scanning probe microscopy. The formation of large terraces could be achieved under temperature-induced annealing, but also the occurrence of facets was observed and characterized. Further, we report on quasi-periodic arrangements of crack defects which evolve due to thermal stress under cooling. While these might impair some applicational endeavours, they may also present crystallographically well-oriented nano-templates of bulk-like properties for advanced approaches.

Stress-Induced In Situ Modification of Transition Temperature in VO2 Films Capped by Chalcogenide

We attempted to modify the monoclinic–rutile structural phase transition temperature (T_tr) of a VO₂ thin film in situ through stress caused by amorphous–crystalline phase change of a chalcogenide layer on it. VO₂ films on C- or R-plane Al₂O₃ substrates were capped by Ge₂Sb₂Te₅ (GST) films by means of rf magnetron sputtering. T_tr of the VO₂ layer was evaluated through temperature-controlled measurements of optical reflection intensity and electrical resistance. Crystallization of the GST capping layer was accompanied by a significant drop in T_tr of the VO₂ layer underneath, either with or without a SiN_x diffusion barrier layer between the two. The shift of T_tr was by ~30 °C for a GST/VO₂ bilayered sample with thicknesses of 200/30 nm, and was by ~6 °C for a GST/SiN_x/VO₂ trilayered sample of 200/10/6 nm. The lowering of T_tr was most probably caused by the volume reduction in GST during the amorphous–crystalline phase change. The stress-induced in in situ modification of T_tr in VO₂ films could pave the way for the application of nonvolatile changes of optical properties in optoelectronic devices.

Understanding the Phase Transition Evolution Mechanism of Partially M2 Phased VO2 Film by Hydrogen Incorporation

Studies on the hydrogen incorporated M1 phase of VO₂ film have been widely reported. However, there are few works on an M2 phase of VO₂. Recently, the M2 phase in VO₂ has received considerable attention due to the possibility of realizing a Mott transition field-effect transistor. By varying the postannealing environment, systematic variations of the M2 phase in (020)-oriented VO₂ films grown on Al₂O₃(0001) were observed. The M2 phase converted to the metallic M1 phase at first and then to the metallic rutile phase after hydrogen annealing (i.e., for H₂/N₂ mixture and H₂ environments). From the diffraction and spectroscopy measurements, the transition is attributed to suppressed electron interactions, not structural modification caused by hydrogen incorporation. Our results suggest the understanding of the phase transition process of the M2 phase by hydrogen incorporation and the possibility of realization of the M2 phased-based Mott transition field-effect transistor.

Detection of Spin Polarized Band in VO2/TiO2(001) Strained Films via Orbital Selective Constant Initial State Spectroscopy

The VO2 is a 3d1 electron system that undergoes a reversible metal–insulator transition (MIT) triggered by temperature and characterized by an interplay between orbital, charge and lattice degrees of freedom. The characterization of the MIT features are therefore extremely challenging and powerful investigation tools are required. In this work, we demonstrate how a combination of resonant photoemission and constant initial state (CIS) spectroscopy can be used as an orbital selective probe of the MIT studying three different VO2/TiO2(001) strained films. The CIS spectra of the V 3d and V 3p photo-electrons shows sensitivity to different orbital contribution and the presence of a spin polarized band close to the Fermi level.

Influence of micro-structure on modulation properties in VO2 composite terahertz memory metamaterials

We have grown VO₂ films and combined with terahertz metamaterials to manipulate the memory effect during the insulator-to-metal transition. The temperature-dependent resonant frequency of hybrid structure shows a thermal hysteresis accompanied with frequency shift and bandwidth variation due to the presence of a VO₂ dielectric layer. This frequency memory effect significantly depends on the metallic micro-structure. Further theoretical calculation demonstrates this phenomenon mainly originates from the different coupling strength between VO₂ and metallic structures. Our findings could facilitate the application of VO₂ films in the smart window and dynamical terahertz modulators.

Investigation of AlGaN/GaN HFET and VO2 Thin Film Based Deflection Transducers Embedded in GaN Microcantilevers

The static and dynamic deflection transducing performances of piezotransistive AlGaN/GaN heterojunction field effect transistors (HFET) and piezoresistive VO₂ thin films, fabricated on GaN microcantilevers of similar dimensions, were investigated. Deflection sensitivities were tuned with the gate bias and operating temperature for embedded AlGaN/GaN HFET and VO₂ thin film transducers, respectively. The GaN microcantilevers were excited with a piezoactuator in their linear and nonlinear oscillation regions of the fundamental oscillatory mode. In the linear regime, the maximum deflection sensitivity of piezotransistive AlGaN/GaN HFET reached up to a 0.5% change in applied drain voltage, while the responsivity of the piezoresistive VO₂ thin film based deflection transducer reached a maximum value of 0.36% change in applied drain current. The effects of the gate bias and the operation temperature on nonlinear behaviors of the microcantilevers were also experimentally examined. Static deflection sensitivity measurements demonstrated a large change of 16% in drain-source resistance of the AlGaN/GaN HFET, and a similarly high 11% change in drain-source resistance in the VO₂ thin film, corresponding to a 10 μm downward step bending of the cantilever free end.

First-Principles Investigations to Evaluate the Spin-Polarized Metal-to-Insulator Transition of Halide Cuprite Perovskites for Smart Windows

Although smart windows have received wide attention as energy-saving devices, conventional metal-to-insulator materials such as VO₂ hinder their commercial usage because of their high transition temperature and low solar energy modulation. Further development can be achieved by finding a new material system that can effectively overcome these limitations. In this study, first-principles density functional theory calculations are used to investigate the possibility of exploiting a spin-polarized band gap material for smart window applications. Halide cuprite perovskites (A₂CuX₄) were chosen because they have a spin-polarized band gap that can be tuned by element selection at sites A and X. Our study shows that the optical transmittance of the insulating phase is increased by a violation of the selection rule. The spin-polarized band gap is closely related to the metal-to-insulator transition temperature and can be modulated by chemical engineering, strain engineering, or both. Therefore, A₂CuX₄ is a promising candidate for smart windows.

Metal Oxide Nanosheets as 2D Building Blocks for the Design of Novel Materials

Research into 2-dimensional materials has soared during the last couple of years. Next to van der Waals type 2D materials such as graphene and h-BN, less well-known oxidic 2D equivalents also exist. Most 2D oxide nanosheets are derived from layered metal oxide phases, although few 2D oxide phases can be also made by bottom-up solution syntheses. Owing to the strong electrostatic interactions within layered metal oxide crystals, a chemical process is usually needed to delaminate them into their 2D constituents. This Review article provides an overview of the synthesis of oxide nanosheets, and methods to assemble them into nanocomposites, mono- or multilayer films. In particular, the use of Langmuir-Blodgett methods to form monolayer films over large surface areas, and the emerging use of ink jet printing to form patterned functional films is emphasized. The utilization of nanosheets in various areas of technology, for example, electronics, energy storage and tribology, is illustrated, with special focus on their use as seed layers for epitaxial growth of thin films, and as electrochemically active electrodes for supercapacitors and Li ion batteries.

Simultaneous Structural and Electronic Transitions in Epitaxial VO_{2}/TiO_{2}(001)

Recent reports have identified new metaphases of VO_{2} with strain and/or doping, suggesting the structural phase transition and the metal-to-insulator transition might be decoupled. Using epitaxially strained VO_{2}/TiO_{2} (001) thin films, which display a bulklike abrupt metal-to-insulator transition and rutile to monoclinic transition structural phase transition, we employ x-ray standing waves combined with hard x-ray photoelectron spectroscopy to simultaneously measure the structural and electronic transitions. This x-ray standing waves study elegantly demonstrates the structural and electronic transitions occur concurrently within experimental limits (±1  K).

Directional ionic transport across the oxide interface enables low-temperature epitaxy of rutile TiO2

Heterogeneous interfaces exhibit the unique phenomena by the redistribution of charged species to equilibrate the chemical potentials. Despite recent studies on the electronic charge accumulation across chemically inert interfaces, the systematic research to investigate massive reconfiguration of charged ions has been limited in heterostructures with chemically reacting interfaces so far. Here, we demonstrate that a chemical potential mismatch controls oxygen ionic transport across TiO₂/VO₂ interfaces, and that this directional transport unprecedentedly stabilizes high-quality rutile TiO₂ epitaxial films at the lowest temperature (≤ 150 °C) ever reported, at which rutile phase is difficult to be crystallized. Comprehensive characterizations reveal that this unconventional low-temperature epitaxy of rutile TiO₂ phase is achieved by lowering the activation barrier by increasing the “effective” oxygen pressure through a facile ionic pathway from VO_2-δ sacrificial templates. This discovery shows a robust control of defect-induced properties at oxide interfaces by the mismatch of thermodynamic driving force, and also suggests a strategy to overcome a kinetic barrier to phase stabilization at exceptionally low temperature.

The research to utilize chemical potential mismatch for materials synthesis has been limited across the oxide interface. Here, the authors show that directional ionic transport from the VO₂ layers stabilizes the rutile TiO₂ phase at extremely low temperatures, at which epitaxy is difficult, by effectively lowering the activation barrier for crystallization.

Reduced Transition Temperature in Al:ZnO/VO2 Based Multi-Layered Device for low Powered Smart Window Application

The metal-to-insulator transition (MIT) closest to room temperature of 68–70 °C as shown by vanadium oxide (VO₂), compared with other transition metal oxides, makes it a potential candidate for smart window coating. We have successfully fabricated a potential smart window device after the optimum design of a multilayered thin film structure made out of transparent conducting oxide (aluminum doped zinc oxide) and pure VO₂ using pulsed laser deposition technique. This comprehensive study is based on two different configurations for multi-layered structure approach, with the intention to reduce the transition temperature, as well as to maintain the MIT properties that would strengthen the potential of the structure to be used for a smart window device. By creating a multi-layered structure, we were able to create a low powered device that can operate less than 15 V that leads to significant decline in the infrared transmission by a magnitude of over 40% and provided sufficient heat to trigger the MIT at a temperature around 60 °C, which is almost 10 °C lower than its bulk counterpart. This finding would positively impact the research on VO₂ thin films, not only as smart windows but also for numerous other applications like bolometers, infrared detectors, Mott transistors and many more.

Variable spin-charge conversion across metal-insulator transition

The charge-to-spin conversion efficiency is a crucial parameter in determining the performance of many useful spintronic materials. Usually, this conversion efficiency is predetermined by the intrinsic nature of solid-state materials, which cannot be easily modified without invoking chemical or structural changes in the underlying system. Here we report on successful modulation of charge-spin conversion efficiency via the metal-insulator transition in a quintessential strongly correlated electron compound vanadium dioxide (VO₂). By employing ferromagnetic resonance driven spin pumping and the inverse spin Hall effect measurement, we find a dramatic change in the spin pumping signal (decrease by > 80%) and charge-spin conversion efficiency (increase by five times) upon insulator to metal transition. The abrupt change in the structural and electrical properties of this material therefore provides useful insights on the spin related physics in a strongly correlated material undergoing a phase transition.

The interconversion of spin and charge is fundamental to the operation of spintronic devices. Here the authors demonstrate spin-to-charge conversion in the correlated material vanadium dioxide, and show that the efficiency changes dramatically across the metal-insulator transition.

Facile Fabrication of Composite Vanadium Oxide Thin Films with Enhanced Thermochromic Properties

In general, high-purity monoclinic VO₂ (VO₂(M)) was considered as a prerequisite for obtaining VO₂-based thermochromic coatings with high performance. The coexistence of other vanadium oxides (such as V₃O₇ and V₂O₅) in VO₂ coatings was regarded as an unfavorable issue. Here, we investigate the microstructures and thermochromic properties of the composite vanadium oxide (CVO) thin films. The results demonstrate that the proper coexistence of high valent vanadium oxides (V₃O₇ and V₂O₅) in VO₂-based films can remarkably enhance the thermochromic performance of films. The CVO thin films were prepared by a room-temperature sputtering process followed by a modified rapid annealing routine in air. The structural analyses (X-ray diffraction, Raman spectroscopy, and transmission electron microscopy) reveal the coexistence of VO₂(M), V₃O₇(M), and V₂O₅(O) in CVO thin films. The luminous transmittance (T_lum) and solar modulation ability (ΔT_sol) of the CVO thin film obtained by an optimal preparation process are 1.93 and 1.34 times those of the pure polycrystalline VO₂ thin film, respectively. Moreover, the CVO thin film exhibits lower semiconductor-to-metal transition temperature (60.8 °C) than the pure VO₂(M) thin film (67.9 °C). Furthermore, the fabrication process is well-reproducible, which is highly attractive for the mass production.

The Effect of Substrate Biasing during DC Magnetron Sputtering on the Quality of VO2 Thin Films and Their Insulator-Metal Transition Behavior

In this work, VO₂ thin films were deposited on Si wafers (onto (100) surface) by DC magnetron sputtering under different cathode bias voltages. The effects of substrate biasing on the structural and optical properties were investigated. The results show that the metal–insulator transition (MIT) temperature of VO₂ thin films can be increased up to 14 K by applying a cathode bias voltage, compared to deposition conditions without any bias. The decrease in the transition efficiency and increase in the transition temperature are attributed to the enlarged grain size, increased defects, and the residual stress in the VO₂ thin films induced by biasing. The optical transmittance measurements for different thickness films indicate an attenuation coefficient of 3.1 × 10⁷ m⁻¹ at 2000 nm or an extinction coefficient of 4.9 in the metal phase. The optical transmittance vs wavelength characteristics point to an indirect bandgap of 0.6 ± 0.5 eV and significant scattering in the bulk and/or at the interface.

Experimental Implementation and Theoretical Investigation of a Vanadium Dioxide Optical Filter for Bit Error Rate Enhancement of Enhanced Space Shift Keying Visible Light Communication Systems

Visible Light Communication (VLC) systems use light-emitting diode (LED) technology to provide high-capacity optical links. The advantages they offer, such as the high data rate and the low installation and operational cost, have identified them as a significant solution for modern networks. However, such systems are vulnerable to various exogenous factors, with the background sunlight noise having the greatest impact. In order to reduce the negative influence of the background noise effect, optical filters can be used. In this work, for the first time, a low-cost optical vanadium dioxide (VO2) optical filter has been designed and experimentally implemented based on the requirements of typical and realistic VLC systems in order to significantly increase their performance by reducing the transmittance of background noise. The functionality of the specific filter is investigated by means of its bit error rate (BER) performance estimation, taking into account its experimentally measured characteristics. Numerous results are provided in order to prove the significant performance enhancement of the VLC systems which, as it is shown, reaches almost six orders of magnitude in some cases, using the specific experimental optical filter.

Electrical Transition in Isostructural VO2 Thin-Film Heterostructures

Control over the concurrent occurrence of structural (monoclinic to tetragonal) and electrical (insulator to the conductor) transitions presents a formidable challenge for VO₂-based thin film devices. Speed, lifetime, and reliability of these devices can be significantly improved by utilizing solely electrical transition while eliminating structural transition. We design a novel strain-stabilized isostructural VO₂ epitaxial thin-film system where the electrical transition occurs without any observable structural transition. The thin-film heterostructures with a completely relaxed NiO buffer layer have been synthesized allowing complete control over strains in VO₂ films. The strain trapping in VO₂ thin films occurs below a critical thickness by arresting the formation of misfit dislocations. We discover the structural pinning of the monoclinic phase in (10 ± 1 nm) epitaxial VO₂ films due to bandgap changes throughout the whole temperature regime as the insulator-to-metal transition occurs. Using density functional theory, we calculate that the strain in monoclinic structure reduces the difference between long and short V-V bond-lengths (Δ_V−V) in monoclinic structures which leads to a systematic decrease in the electronic bandgap of VO₂. This decrease in bandgap is additionally attributed to ferromagnetic ordering in the monoclinic phase to facilitate a Mott insulator without going through the structural transition.

Size and crystallinity control of dispersed VO2 particles for modulation of metal–insulator transition temperature and hysteresis

Growth mechanism of VO₂ particles with size dependent crystallinity: a solid-state dewetting and pyrolysis synergistic effect. Crystallinity, strain and defects optimize and modulate the MIT behavior of VO₂ particles.

Dynamic Electronic Doping for Correlated Oxides by a Triboelectric Nanogenerator

The metal-insulator transition of vanadium dioxide (VO₂ ) is exceptionally sensitive to charge density and electron orbital occupancy. Thus three-terminal field-effect transistors with VO₂ channels are widely adopted to control the phase transition by external gating voltage. However, current leakage, electrical breakdown, or interfacial electrochemical reactions may be inevitable if conventional solid dielectrics or ionic-liquid layers are used, which possibly induce Joule heating or doping in the VO₂ layer and make the voltage-controlled phase transition more complex. Here, a triboelectric nanogenerator (TENG) and a VO₂ film are combined for a novel TENG-VO₂ device, which can overcome the abovementioned challenges and achieve electron-doping-induced phase modulation. By taking advantage of the TENG structure, electrons can be induced in the VO₂ channel and thus adjust the electronic states of the VO₂ , simultaneously. The modulation degree of the VO₂ resistance depends on the temperature, and the major variation occurs when the temperature is in the phase-transition region. The accumulation of electrons in the VO₂ channel also is simulated by finite element analysis, and the electron doping mechanism is verified by theoretical calculations. The results provide a promising approach to develop a novel type of tribotronic transistor and new electronic doping technology.

Reversible and repeatable phase transition at a negative temperature regime for doped and co-doped spin coated mixed valence vanadium oxide thin films

Smooth, uniform mixed valance vanadium oxide (VO) thin films are grown on flexible, transparent Kapton and opaque Al6061 substrates by the spin coating technique at a constant rpm of 3000. Various elements e.g., F, Ti, Mo and W are utilized for doping and co-doping of VO. All the spin coated films are heat treated in a vacuum. Other than the doping elements the existence of only V⁴⁺ and V⁵⁺ species is noticed in the present films. Transmittance as a function of wavelength and the optical band gap are also investigated for doped and co-doped VO thin films grown on a Kapton substrate. The highest transparency (∼75%) is observed for the Ti, Mo and F (i.e., Ti–Mo–FVO) co-doped VO system while the lowest transparency (∼35%) is observed for the F (i.e., FVO) doped VO system. Thus, the highest optical band gap is estimated as 2.73 eV for Ti–Mo–FVO and the lowest optical band gap (i.e., 2.59 eV) is found for the FVO system. The temperature dependent phase transition characteristics of doped and co-doped VO films on both Kapton and Al6061 are studied by the differential scanning calorimetry (DSC) technique. Reversible and repeatable phase transition is noticed in the range of −24 to −26.3 °C.

Smooth, uniform mixed valance vanadium oxide (VO) thin films are grown on flexible, transparent Kapton and opaque Al6061 substrates by the spin coating technique at a constant rpm of 3000.

Revealing the role of oxygen vacancies on the phase transition of VO2 film from the optical-constant measurements

Vanadium dioxide (VO₂) material shows a distinct metal–insulator transition (MIT) at the critical temperature of ∼340 K. Similar to other correlated oxides, the MIT properties of VO₂ is always sensitive to those crystal defects such as oxygen vacancies. In this study, we investigated the oxygen vacancies related phase transition behavior of VO₂ crystal film and systematically examined the effect of oxygen vacancies from the optical constant measurements. The results indicated that the oxygen vacancies changed not only the electron occupancy on V 3d–O 2p hybrid-orbitals, but also the electron–electron correlation energy and the related band gap, which modulated the MIT behavior and decreased the critical temperature resultantly. Our work not only provided a facile way to modulate the MIT behavior of VO₂ crystal film, but also revealed the effects of the oxygen vacancies on the electronic inter-band transitions as well as the electronic correlations in driving this MIT process.

Optical conductivity spectroscopy was performed to reveal the role of oxygen vacancies during VO₂ metal–insulator transition.

Reconfigurable Vanadium Dioxide Nanomembranes and Microtubes with Controllable Phase Transition Temperatures

Two additional structural forms, free-standing nanomembranes and microtubes, are reported and added to the vanadium dioxide (VO₂) material family. Free-standing VO₂ nanomembranes were fabricated by precisely thinning as-grown VO₂ thin films and etching away the sacrificial layer underneath. VO₂ microtubes with a range of controllable diameters were rolled-up from the VO₂ nanomembranes. When a VO₂ nanomembrane is rolled-up into a microtubular structure, a significant compressive strain is generated and accommodated therein, which decreases the phase transition temperature of the VO₂ material. The magnitude of the compressive strain is determined by the curvature of the VO₂ microtube, which can be rationally and accurately designed by controlling the tube diameter during the rolling-up fabrication process. The VO₂ microtube rolling-up process presents a novel way to controllably tune the phase transition temperature of VO₂ materials over a wide range toward practical applications. Furthermore, the rolling-up process is reversible. A VO₂ microtube can be transformed back into a nanomembrane by introducing an external strain. Because of its tunable phase transition temperature and reversible shape transformation, the VO₂ nanomembrane-microtube structure is promising for device applications. As an example application, a tubular microactuator device with low driving energy but large displacement is demonstrated at various triggering temperatures.

Ambiguous Role of Growth-Induced Defects on the Semiconductor-to-Metal Characteristics in Epitaxial VO2/TiO2 Thin Films

Controlling the semiconductor-to-metal transition temperature in epitaxial VO₂ thin films remains an unresolved question both at the fundamental as well as the application level. Within the scope of this work, the effects of growth temperature on the structure, chemical composition, interface coherency and electrical characteristics of rutile VO₂ epitaxial thin films grown on TiO₂ substrates are investigated. It is hereby deduced that the transition temperature is lower than the bulk value of 340 K. However, it is found to approach this value as a function of increased growth temperature even though it is accompanied by a contraction along the V⁴⁺-V⁴⁺ bond direction, the crystallographic c-axis lattice parameter. Additionally, it is demonstrated that films grown at low substrate temperatures exhibit a relaxed state and a strongly reduced transition temperature. It is suggested that, besides thermal and epitaxial strain, growth-induced defects may strongly affect the electronic phase transition. The results of this work reveal the difficulty in extracting the intrinsic material response to strain, when the exact contribution of all strain sources cannot be effectively determined. The findings also bear implications on the limitations in obtaining the recently predicted novel semi-Dirac point phase in VO₂/TiO₂ multilayer structures.

Highly infrared sensitive VO2 nanowires for a nano-optical device

Recent studies on the electronic, magnetic and optical properties of VO2 (vanadium dioxide) materials have motivated the exploration of one dimensional VO2 nanowires. First principles calculations were performed to investigate the structural, electronic, magnetic and optical properties of the monoclinic (M) and rutile (R) phases of VO2 nanowires. The monoclinic phase shows semiconducting behaviour with a band gap of 1.17 eV, whereas the rutile phase of VO2 nanowires behaves as a spin gapless semiconducting material, as band lines cross the Fermi level due only to up spin contribution. The monoclinic structure of VO2 nanowires is found to be paramagnetic and the rutile structure shows ferromagnetic half metal behavior. The conductivity calculation for VO2 nanowires shows the metal-insulator transition (MIT) temperature to be 250 K. The possible mechanism of VO2 nanowires to be used as smart windows has been discussed, as the nanowires are highly sensitive in the infrared (IR) region. Interestingly, at low temperature, the VO2 monoclinic structure allows infrared light to be transmitted, while VO2 with the rutile phase blocks light in the IR region. Furthermore, we adsorbed CO2, N2 and SO2 gas molecules on 1D VO2 monoclinic nanowire to investigate their interaction behaviour. It was observed that the absorption and transmission properties of VO2 dramatically change upon the adsorption of CO2 and SO2 gas molecules, which is likely to open up its application as an optical gas sensor.

VO2 /TiN Plasmonic Thermochromic Smart Coatings for Room-Temperature Applications

Vanadium dioxide/titanium nitride (VO₂ /TiN) smart coatings are prepared by hybridizing thermochromic VO₂ with plasmonic TiN nanoparticles. The VO₂ /TiN coatings can control infrared (IR) radiation dynamically in accordance with the ambient temperature and illumination intensity. It blocks IR light under strong illumination at 28 °C but is IR transparent under weak irradiation conditions or at a low temperature of 20 °C. The VO₂ /TiN coatings exhibit a good integral visible transmittance of up to 51% and excellent IR switching efficiency of 48% at 2000 nm. These unique advantages make VO₂ /TiN promising as smart energy-saving windows.

Non-catalytic hydrogenation of VO2 in acid solution

Hydrogenation is an effective way to tune the property of metal oxides. It can conventionally be performed by doping hydrogen into solid materials with noble-metal catalysis, high-temperature/pressure annealing treatment, or high-energy proton implantation in vacuum condition. Acid solution naturally provides a rich proton source, but it should cause corrosion rather than hydrogenation to metal oxides. Here we report a facile approach to hydrogenate monoclinic vanadium dioxide (VO₂) in acid solution at ambient condition by placing a small piece of low workfunction metal (Al, Cu, Ag, Zn, or Fe) on VO₂ surface. It is found that the attachment of a tiny metal particle (~1.0 mm) can lead to the complete hydrogenation of an entire wafer-size VO₂ (>2 inch). Moreover, with the right choice of the metal a two-step insulator–metal–insulator phase modulation can even be achieved. An electron–proton co-doping mechanism has been proposed and verified by the first-principles calculations.

Hydrogenation is an effective way to tune the property of metal oxides. Here, the authors report a simple approach to hydrogenate VO₂ in acid solution under ambient conditions by placing a small piece of low workfunction metal on VO₂ surface.

New intelligent multifunctional SiO2/VO2 composite films with enhanced infrared light regulation performance, solar modulation capability, and superhydrophobicity

Highly transparent, energy-saving, and superhydrophobic nanostructured SiO₂/VO₂ composite films have been fabricated using a sol-gel method. These composite films are composed of an underlying infrared (IR)-regulating VO₂ layer and a top protective layer that consists of SiO₂ nanoparticles. Experimental results showed that the composite structure could enhance the IR light regulation performance, solar modulation capability, and hydrophobicity of the pristine VO₂ layer. The transmittance of the composite films in visible region (T_lum) was higher than 60%, which was sufficient to meet the requirements of glass lighting. Compared with pristine VO₂ films and tungsten-doped VO₂ film, the near IR control capability of the composite films was enhanced by 13.9% and 22.1%, respectively, whereas their solar modulation capability was enhanced by 10.9% and 22.9%, respectively. The water contact angles of the SiO₂/VO₂ composite films were over 150°, indicating superhydrophobicity. The transparent superhydrophobic surface exhibited a high stability toward illumination as all the films retained their initial superhydrophobicity even after exposure to 365 nm light with an intensity of 160 mW ^. cm^-2 for 10 h. In addition, the films possessed anti-oxidation and anti-acid properties. These characteristics are highly advantageous for intelligent windows or solar cell applications, given that they can provide surfaces with anti-fogging, rainproofing, and self-cleaning effects. Our technique offers a simple and low-cost solution to the development of stable and visible light transparent superhydrophobic surfaces for industrial applications.