Single photons on-demand from light-hole excitons in strain-engineered quantum dots

Uniaxial strain tuning of organic molecule single photon sources

Organic fluorophores are excellent single photon sources, combining high brightness, lifetime-limited linewidths and useful emission wavelengths. A key factor in their performance as photon emitters is their dynamic frequency tunability, which can be used to render the emission from multiple molecules indistinguishable. In this work we demonstrate dynamic tuning of dibenzoterrylene molecules embedded in anthracene crystals through the application of uniaxial strain fields. By bending a piezoelectric strip in two opposite directions in linear steps, we impose an escalating compressive or tensile strain on the molecular crystals, resulting in two opposite dynamic detunings of the dopant dibenzoterrylene emission wavelength. To validate that the tuning mechanism is strain, we performed a similar measurement using an identical strip that was depolarised by annealing in which the tuning was absent. Finally, we simulated the effect of strain on the dopant dibenzoterrylene emission wavelength by combining molecular dynamics and density functional theory techniques to determine the strain tuning rate which matched well with that found experimentally.

A Light-Hole Germanium Quantum Well on Silicon

The quiet quantum environment of holes in solid-state devices is at the core of increasingly reliable architectures for quantum processors and memories. However, due to the lack of scalable materials to properly tailor the valence band character and its energy offsets, the precise engineering of light-hole (LH) states remains a serious obstacle toward coherent optical photon-spin interfaces needed for a direct mapping of the quantum information encoded in photon flying qubits to stationary spin processors. Herein, to alleviate this long-standing limitation, an all-group-IV low-dimensional system is demonstrated, consisting of a highly tensile strained germanium quantum well grown on silicon allowing new degrees of freedom to control and manipulate the hole states. Wafer-level, high bi-isotropic in-plane tensile strain (<1%) is achieved using strain-engineered, metastable germanium-tin alloyed buffer layers yielding quantum wells with LH ground state, high g-factor anisotropy, and a tunable splitting of the hole sub-bands. The epitaxial heterostructures display sharp interfaces with sub-nanometer broadening and show room-temperature excitonic transitions that are modulated and extended to the mid-wave infrared by controlling strain and thickness. This ability to engineer quantum structures with LH selective confinement and controllable optical response enables manufacturable silicon-compatible platforms relevant to integrated quantum communication and sensing technologies.

Single- and Twin-Photons Emitted from Fiber-Coupled Quantum Dots in a Distributed Bragg Reflector Cavity

In this work, we develop single-mode fiber devices of an InAs/GaAs quantum dot (QD) by bonding a fiber array with large smooth facet, small core, and small numerical aperture to QDs in a distributed Bragg reflector planar cavity with vertical light extraction that prove mode overlap and efficient output for plug-and-play stable use and extensive study. Modulated Si doping as electron reservoir builds electric field and level tunnel coupling to reduce fine-structure splitting (FSS) and populate dominant XX and higher excitons XX⁺ and XXX. Epoxy package thermal stress induces light hole (lh) with various behaviors related to the donor field: lh h₁ confined with more anisotropy shows an additional X_Z line (its space to the traditional X lines reflects the field intensity) and larger FSS; lh h₂ delocalized to wetting layer shows a fast h₂-h₁ decay; lh h₂ confined shows D_3h symmetric higher excitons with slow h₂-h₁ decay and more confined h₁ to raise h₁-h₁ Coulomb interaction.

Imaging the electrostatic landscape of unstrained self-assemble GaAs quantum dots

Unstrained GaAs quantum dots are promising candidates for quantum information devices due to their optical properties, but their electronic properties have remained relatively unexplored until now. In this work, we systematically investigate the electronic structure and natural charging of GaAs quantum dots at room temperature using Kelvin probe force microscopy (KPFM). We observe a clear electrical signal from these structures demonstrating a lower surface potential in the middle of the dot. We ascribe this to charge accumulation and confinement inside these structures. Our systematical investigation reveals that the change in surface potential is larger for a nominal dot filling of 2 nm and then starts to decrease for thicker GaAs layers. Usingk·pcalculation, we show that the confinement comes from the band bending due to the surface Fermi level pinning. We find a correlation between the calculated charge density and the KPFM signal indicating thatk·pcalculations could be used to estimate the KPFM signal for a given structure. Our results suggest that these self-assembled structures could be used to study physical phenomena connected to charged quantum dots like Coulomb blockade or Kondo effect.

Fabrication and Optical Properties of Strain-free Self-assembled Mesoscopic GaAs Structures

We use a combined process of Ga-assisted deoxidation and local droplet etching to fabricate unstrained mesoscopic GaAs/AlGaAs structures exhibiting a high shape anisotropy with a length up to 1.2 μm and a width of 150 nm. We demonstrate good controllability over size and morphology of the mesoscopic structures by tuning the growth parameters. Our growth method yields structures, which are coupled to a surrounding quantum well and present unique optical emission features. Microscopic and optical analysis of single structures allows us to demonstrate that single structure emission originates from two different confinement regions, which are spectrally separated and show sharp excitonic lines. Photoluminescence is detected up to room temperature making the structures the ideal candidates for strain-free light emitting/detecting devices.

Electric-Field-Induced Energy Tuning of On-Demand Entangled-Photon Emission from Self-Assembled Quantum Dots

We explore a method to achieve electrical control over the energy of on-demand entangled-photon emission from self-assembled quantum dots (QDs). The device used in our work consists of an electrically tunable diode-like membrane integrated onto a piezoactuator, which is capable of exerting a uniaxial stress on QDs. We theoretically reveal that, through application of the quantum-confined Stark effect to QDs by a vertical electric field, the critical uniaxial stress used to eliminate the fine structure splitting of QDs can be linearly tuned. This feature allows experimental realization of a triggered source of energy-tunable entangled-photon emission. Our demonstration represents an important step toward realization of a solid-state quantum repeater using indistinguishable entangled photons in Bell state measurements.

Transport properties of a single plasmon interacting with a hybrid exciton of a metal nanoparticle-semiconductor quantum dot system coupled to a plasmonic waveguide

The transport properties of a single plasmon interacting with a hybrid system composed of a semiconductor quantum dot (SQD) and a metal nanoparticle (MNP) coupled to a one-dimensional surface plasmonic waveguide are investigated theoretically via the real-space approach. We considered that the MNP-SQD interaction leads to the formation of a hybrid exciton and the transmission and reflection of a single incident plasmon could be controlled by adjusting the frequency of the classical control field applied to the MNP-SQD hybrid nanosystem, the kinds of MNPs and the background media. The transport properties of a single plasmon interacting with such a hybrid nanosystem discussed here could find applications in the design of next-generation quantum devices, such as single-photon switching and nanomirrors, and in quantum information processing.

Monolithically Integrated Microelectromechanical Systems for On-Chip Strain Engineering of Quantum Dots

Elastic strain fields based on single crystal piezoelectric elements represent an effective way for engineering the quantum dot (QD) emission with unrivaled precision and technological relevance. However, pioneering researches in this direction were mainly based on bulk piezoelectric substrates, which prevent the development of chip-scale devices. Here, we present a monolithically integrated Microelectromechanical systems (MEMS) device with great potential for on-chip quantum photonic applications. High-quality epitaxial PMN-PT thin films have been grown on SrTiO3 buffered Si and show excellent piezoelectric responses. Dense arrays of MEMS with small footprints are then fabricated based on these films, forming an on-chip strain tuning platform. After transferring the QD-containing nanomembranes onto these MEMS, the nonclassical emissions (e.g., single photons) from single QDs can be engineered by the strain fields. We envision that the strain tunable QD sources on the individually addressable and monolithically integrated MEMS pave the way toward complex quantum photonic applications on chip.