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Shen R, Sun Z, Shi Y, Zhou Y, Guo W, Zhou Y, Yan H, Liu F. Solution Processed Organic/Silicon Nanowires Hybrid Heterojunction Solar Cells Using Organosilane Incorporated Poly(3,4-ethylenedioxythiophene):Poly(styrenesulfonate) as Hole Transport Layers. ACS NANO 2021; 15:6296-6304. [PMID: 33661604 DOI: 10.1021/acsnano.0c10526] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Hybrid heterojunction solar cells (HHSCs) using crystalline Si nanowires (SiNWs) as the absorber and conducting polymer poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) as the hole-selective transport layer (HTL) show great potential in both low-cost and high-power conversion efficiency (PCE). However, due to the poor wettability of the PEDOT:PSS solution on SiNWs, conformal coverage of PEDOT:PSS on SiNWs is not easy to achieve. Here, an effective method was developed to decrease the surface tension of the PEDOT:PSS and increase the wettability between PEDOT:PSS and SiNWs by incorporating organosilane into the PEDOT:PSS solution. Two kinds of organosilanes including tetramethoxysilane (TMOS) and vinyltrimethoxysilane (VTMO) were selected as the additives. The surface passivation quality of the SiNWs was dramatically enhanced. The HHSCs utilizing VTMO as the additive show a higher open circuit voltage and higher PCE compared with the TMOS adding ones. By spin-coating Ag nanowires onto the PEDOT:PSS HTL layer and using spin-coated phenyl-C61-butyric acid methyl ester as the electron-selective transport layer, a champion PCE up to 18.12% and a fill factor of 80.1% have been achieved on the full solution processed PEDOT:PSS/n-type SiNWs HHSCs. The findings provide a simple and promising method to achieve high-performance PEDOT:PSS/SiNWs HHSCs.
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Affiliation(s)
- Rongzong Shen
- Center of Materials Science and Optoelectronics Engineering and College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zongheng Sun
- Center of Materials Science and Optoelectronics Engineering and College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yanbin Shi
- Center of Materials Science and Optoelectronics Engineering and College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yurong Zhou
- Center of Materials Science and Optoelectronics Engineering and College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Wanwu Guo
- Jetion Solar (China) Co., Ltd, Jiangyin 214443, China
| | - Yuqin Zhou
- Center of Materials Science and Optoelectronics Engineering and College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Hui Yan
- College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124, China
| | - Fengzhen Liu
- Center of Materials Science and Optoelectronics Engineering and College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
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Ren Q, Qiu J, Lv X, Li HY, Yan L, Meng C, Yang Y, Mai Y. Tailoring the Vertical Morphology of Organic Films for Efficient Planar-Si/Organic Hybrid Solar Cells by Facile Nonpolar Solvent Treatment. ACS APPLIED MATERIALS & INTERFACES 2020; 12:25075-25080. [PMID: 32420724 DOI: 10.1021/acsami.0c02063] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The optical and electrical properties of the blending organic film poly(3,4-ethylenedioxy-thiophene):poly(styrenesulfonate) (PEDOT:PSS) are strongly affected by its morphology, resulting in the performance variation in Si/organic hybrid solar cells. Here, a facile postsolvent treatment is used to tailor the vertical morphology of PEDOT:PSS by introducing a nonpolar solvent. X-ray photoelectron spectroscopy depth-profiling measurements show that the distribution of PEDOT and PSS on the surface of n-type Si can be changed by nonpolar solvent n-hexane (NHX) treatment, where more PSS aggregate at the bottom of the blend film and more PEDOT float up to the top, as compared with the reference sample. As a result, after NHX treatment, the average lifetime of the Si/organic films is increased from 152 μs for untreated samples to 248 μs for NHX-treated ones because of the better passivation effect of PSS on Si. Moreover, the transmission line model measurements indicate that the contact resistance (RC) of PEDOT:PSS film and the Ag electrode is decreased for better charge collection after NHX treatment. Eventually, the best power conversion efficiency (PCE) of 13.78% for NHX-treated planar solar cells is obtained, much higher than the PCE (with best of 12.78%) of reference devices without nonpolar solvent treatment. Our results provide a facile method to tailor the vertical morphology of the PEDOT:PSS in Si/organic hybrid solar cells.
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Affiliation(s)
- Qiyou Ren
- Institute of New Energy Technology, College of Information Science and Technology, Jinan University, Guangzhou 510632, China
| | - Jufeng Qiu
- Institute of New Energy Technology, College of Information Science and Technology, Jinan University, Guangzhou 510632, China
| | - Xiaoning Lv
- Institute of New Energy Technology, College of Information Science and Technology, Jinan University, Guangzhou 510632, China
| | - Huan-Yong Li
- Analytical and Testing Center, Jinan University, Guangzhou 510632, China
| | - Li Yan
- Institute of New Energy Technology, College of Information Science and Technology, Jinan University, Guangzhou 510632, China
| | - Chunfeng Meng
- School of Material Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang 212003, China
| | - Yuzhao Yang
- Institute of New Energy Technology, College of Information Science and Technology, Jinan University, Guangzhou 510632, China
| | - Yaohua Mai
- Institute of New Energy Technology, College of Information Science and Technology, Jinan University, Guangzhou 510632, China
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3
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Research on Functional Nanomaterials, Interfaces, and Applications at Soochow University. ACS NANO 2019; 13:2667-2671. [PMID: 30913577 DOI: 10.1021/acsnano.9b01960] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
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Duan X, Zhang X, Zhang Y. High Performance Organic-Nanostructured Silicon Hybrid Solar Cell with Modified Surface Structure. NANOSCALE RESEARCH LETTERS 2018; 13:283. [PMID: 30209632 PMCID: PMC6135730 DOI: 10.1186/s11671-018-2703-2] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/11/2018] [Accepted: 08/31/2018] [Indexed: 05/22/2023]
Abstract
Silicon nanowires (SiNWs) with excellent light trapping properties have been widely applied in photovoltaic devices, which provide opportunities for boosting the photons harvested by Si. However, the photoexcited carriers are easily trapped and recombined by high-density surface defects due to higher surface area prolonging to depth of nanowire. In this work, in order to reduce the surface defects and recombination rate of SiNWs, a simple solution process is used to modify the surface structure. Applying the tetramethyl ammonium hydroxide (TMAH) treatment leads to smooth and taper Si NW surface, which improves the open-circuit voltage (Voc) and fill factor (FF) obviously. Thus, a champion PCE of 14.08% is achieved for the nanostructured Si/PEDOT:PSS hybrid device by 60-s TMAH treatment. It also indicates that TMAH treatment promises a simple and effective method for enhancing Si NW-based devices.
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Affiliation(s)
- Xiaoli Duan
- School of Chemistry and Materials Science, Ludong University, Yantai, 264025 People’s Republic of China
| | - Xiaofeng Zhang
- School of Chemistry and Materials Science, Ludong University, Yantai, 264025 People’s Republic of China
| | - Yunfang Zhang
- Department of Science, Jiangsu University of Science and Technology, Zhenjiang, 212003 People’s Republic of China
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Liu Y, Sun N, Liu J, Wen Z, Sun X, Lee ST, Sun B. Integrating a Silicon Solar Cell with a Triboelectric Nanogenerator via a Mutual Electrode for Harvesting Energy from Sunlight and Raindrops. ACS NANO 2018; 12:2893-2899. [PMID: 29444396 DOI: 10.1021/acsnano.8b00416] [Citation(s) in RCA: 62] [Impact Index Per Article: 10.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
Solar cells, as promising devices for converting light into electricity, have a dramatically reduced performance on rainy days. Here, an energy harvesting structure that integrates a solar cell and a triboelectric nanogenerator (TENG) device is built to realize power generation from both sunlight and raindrops. A heterojunction silicon (Si) solar cell is integrated with a TENG by a mutual electrode of a poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) film. Regarding the solar cell, imprinted PEDOT:PSS is used to reduce light reflection, which leads to an enhanced short-circuit current density. A single-electrode-mode water-drop TENG on the solar cell is built by combining imprinted polydimethylsiloxane (PDMS) as a triboelectric material combined with a PEDOT:PSS layer as an electrode. The increasing contact area between the imprinted PDMS and water drops greatly improves the output of the TENG with a peak short-circuit current of ∼33.0 nA and a peak open-circuit voltage of ∼2.14 V, respectively. The hybrid energy harvesting system integrated electrode configuration can combine the advantages of high current level of a solar cell and high voltage of a TENG device, promising an efficient approach to collect energy from the environment in different weather conditions.
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Affiliation(s)
- Yuqiang Liu
- Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices , Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University , Suzhou 215123 , China
| | - Na Sun
- Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices , Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University , Suzhou 215123 , China
| | - Jiawei Liu
- Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices , Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University , Suzhou 215123 , China
| | - Zhen Wen
- Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices , Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University , Suzhou 215123 , China
| | - Xuhui Sun
- Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices , Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University , Suzhou 215123 , China
| | - Shuit-Tong Lee
- Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices , Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University , Suzhou 215123 , China
| | - Baoquan Sun
- Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices , Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University , Suzhou 215123 , China
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Gao P, Yang Z, He J, Yu J, Liu P, Zhu J, Ge Z, Ye J. Dopant-Free and Carrier-Selective Heterocontacts for Silicon Solar Cells: Recent Advances and Perspectives. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2018; 5:1700547. [PMID: 29593956 PMCID: PMC5867084 DOI: 10.1002/advs.201700547] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/31/2017] [Revised: 10/17/2017] [Indexed: 05/22/2023]
Abstract
By combining the most successful heterojunctions (HJ) with interdigitated back contacts, crystalline silicon (c-Si) solar cells (SCs) have recently demonstrated a record efficiency of 26.6%. However, such SCs still introduce optical/electrical losses and technological issues due to parasitic absorption/Auger recombination inherent to the doped films and the complex process of integrating discrete p+- and n+-HJ contacts. These issues have motivated the search for alternative new functional materials and simplified deposition technologies, whereby carrier-selective contacts (CSCs) can be formed directly with c-Si substrates, and thereafter form IBC cells, via a dopant-free method. Screening and modifying CSC materials in a wider context is beneficial for building dopant-free HJ contacts with better performance, shedding new light on the relatively mature Si photovoltaic field. In this review, a significant number of achievements in two representative dopant-free hole-selective CSCs, i.e., poly(3,4-ethylene dioxythiophene):poly(styrenesulfonate)/Si and transition metal oxides/Si, have been systemically presented and surveyed. The focus herein is on the latest advances in hole-selective materials modification, interfacial passivation, contact resistivity, light-trapping structure and device architecture design, etc. By analyzing the structure-property relationships of hole-selective materials and assessing their electrical transport properties, promising functional materials as well as important design concepts for such CSCs toward high-performance SCs have been highlighted.
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Affiliation(s)
- Pingqi Gao
- Ningbo Institute of Material Technology and EngineeringChinese Academy of SciencesNingbo315201China
| | - Zhenhai Yang
- Ningbo Institute of Material Technology and EngineeringChinese Academy of SciencesNingbo315201China
| | - Jian He
- Ningbo Institute of Material Technology and EngineeringChinese Academy of SciencesNingbo315201China
- University of Chinese Academy of SciencesBeijing100049China
| | - Jing Yu
- Ningbo Institute of Material Technology and EngineeringChinese Academy of SciencesNingbo315201China
- University of Chinese Academy of SciencesBeijing100049China
| | - Peipei Liu
- Ningbo Institute of Material Technology and EngineeringChinese Academy of SciencesNingbo315201China
- University of Chinese Academy of SciencesBeijing100049China
| | - Juye Zhu
- Ningbo Institute of Material Technology and EngineeringChinese Academy of SciencesNingbo315201China
- University of Chinese Academy of SciencesBeijing100049China
| | - Ziyi Ge
- Ningbo Institute of Material Technology and EngineeringChinese Academy of SciencesNingbo315201China
| | - Jichun Ye
- Ningbo Institute of Material Technology and EngineeringChinese Academy of SciencesNingbo315201China
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Fukata N, Subramani T, Jevasuwan W, Dutta M, Bando Y. Functionalization of Silicon Nanostructures for Energy-Related Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2017; 13:1701713. [PMID: 28941166 DOI: 10.1002/smll.201701713] [Citation(s) in RCA: 18] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/23/2017] [Revised: 07/26/2017] [Indexed: 05/21/2023]
Abstract
Silicon (Si) is used in various application fields such as solar cells and electric devices. Functionalization of Si nanostructures is one way to further improve the properties of these devices such as these. This Review summarizes recent results of solar cell and Li-ion battery applications using Si-related nanostructures. In solar cell applications, the light trapping effect is increased and the carrier recombination rate is decreased due to the short carrier collection path achieved by radially constructed p-n junction in Si nanowires, resulting in higher power conversion efficiency. The nonradiative energy transfer effect created by nanocrystalline Si is a novel way of improving solar cell properties. Si-related nanostructures are also anticipated as new anode materials with higher capacity in Li-ion batteries. Si-related nanocomposite materials which show densely packed microparticle structures agglomerated with small nanoparticles are described here as a promising challenge. These unique structures show higher capacity and longer cycle properties.
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Affiliation(s)
- Naoki Fukata
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Thiyagu Subramani
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Wipakorn Jevasuwan
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Mrinal Dutta
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Yoshio Bando
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
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Zhang B, Jie J, Zhang X, Ou X, Zhang X. Large-Scale Fabrication of Silicon Nanowires for Solar Energy Applications. ACS APPLIED MATERIALS & INTERFACES 2017; 9:34527-34543. [PMID: 28921947 DOI: 10.1021/acsami.7b06620] [Citation(s) in RCA: 16] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
The development of silicon (Si) materials during past decades has boosted up the prosperity of the modern semiconductor industry. In comparison with the bulk-Si materials, Si nanowires (SiNWs) possess superior structural, optical, and electrical properties and have attracted increasing attention in solar energy applications. To achieve the practical applications of SiNWs, both large-scale synthesis of SiNWs at low cost and rational design of energy conversion devices with high efficiency are the prerequisite. This review focuses on the recent progresses in large-scale production of SiNWs, as well as the construction of high-efficiency SiNW-based solar energy conversion devices, including photovoltaic devices and photo-electrochemical cells. Finally, the outlook and challenges in this emerging field are presented.
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Affiliation(s)
- Bingchang Zhang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University , Suzhou, Jiangsu 215123, People's Republic of China
| | - Jiansheng Jie
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University , Suzhou, Jiangsu 215123, People's Republic of China
| | - Xiujuan Zhang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University , Suzhou, Jiangsu 215123, People's Republic of China
| | - Xuemei Ou
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University , Suzhou, Jiangsu 215123, People's Republic of China
| | - Xiaohong Zhang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University , Suzhou, Jiangsu 215123, People's Republic of China
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Han Y, Liu Y, Yuan J, Dong H, Li Y, Ma W, Lee ST, Sun B. Naphthalene Diimide-Based n-Type Polymers: Efficient Rear Interlayers for High-Performance Silicon-Organic Heterojunction Solar Cells. ACS NANO 2017; 11:7215-7222. [PMID: 28679036 DOI: 10.1021/acsnano.7b03090] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Silicon-organic heterojunction solar cells suffer from a noticeable weakness of inefficient rear contact. To improve this rear contact quality, here, two solution-processed organic n-type donor-acceptor naphthalene diimide (NDI)-based conjugated polymers of N2200 and fluorinated analogue F-N2200 are explored to reduce the contact resistance as well as to passivate the Si surface. Both N2200 and F-N2200 exhibit high electron mobility due to their planar structure and strong intermolecular stacking, thus allowing them to act as excellent transporting layers. Preferential orientation of the polymers leads to reduce contact resistance between Si and cathode aluminum, which can enhance electron extraction. More importantly, the substitution of fluorine atoms for hydrogen atoms within the conjugated polymer can strengthen the intermolecular stacking and improve the polymer-Si electronic contact due to the existence of F···H interactions. The power conversion efficiencies of Si-PEDOT:PSS solar cells increased from 12.6 to 14.5% as a consequence of incorporating the F-N2200 polymer interlayers. Subsequently, in-depth density functional theory simulations confirm that the polymer orientation plays a critical role on the polymer-Si contact quality. The success of NDI-based polymers indicates that planar conjugated polymer with a preferred orientation could be useful in developing high-performance solution-processed Si-organic heterojunction photovoltaic devices.
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Affiliation(s)
- Yujie Han
- Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University , Suzhou 215123, China
| | - Yuqiang Liu
- Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University , Suzhou 215123, China
| | - Jianyu Yuan
- Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University , Suzhou 215123, China
| | - Huilong Dong
- Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University , Suzhou 215123, China
| | - Youyong Li
- Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University , Suzhou 215123, China
| | - Wanli Ma
- Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University , Suzhou 215123, China
| | - Shuit-Tong Lee
- Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University , Suzhou 215123, China
| | - Baoquan Sun
- Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University , Suzhou 215123, China
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Um HD, Choi D, Choi A, Seo JH, Seo K. Embedded Metal Electrode for Organic-Inorganic Hybrid Nanowire Solar Cells. ACS NANO 2017; 11:6218-6224. [PMID: 28531350 DOI: 10.1021/acsnano.7b02322] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/26/2023]
Abstract
We demonstrate here an embedded metal electrode for highly efficient organic-inorganic hybrid nanowire solar cells. The electrode proposed here is an effective alternative to the conventional bus and finger electrode which leads to a localized short circuit at a direct Si/metal contact and has a poor collection efficiency due to a nonoptimized electrode design. In our design, a Ag/SiO2 electrode is embedded into a Si substrate while being positioned between Si nanowire arrays underneath poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS), facilitating suppressed recombination at the Si/Ag interface and notable improvements in the fabrication reproducibility. With an optimized microgrid electrode, our 1 cm2 hybrid solar cells exhibit a power conversion efficiency of up to 16.1% with an open-circuit voltage of 607 mV and a short circuit current density of 34.0 mA/cm2. This power conversion efficiency is more than twice as high as that of solar cells using a conventional electrode (8.0%). The microgrid electrode significantly minimizes the optical and electrical losses. This reproducibly yields a superior quantum efficiency of 99% at the main solar spectrum wavelength of 600 nm. In particular, our solar cells exhibit a significant increase in the fill factor of 78.3% compared to that of a conventional electrode (61.4%); this is because of the drastic reduction in the metal/contact resistance of the 1 μm-thick Ag electrode. Hence, the use of our embedded microgrid electrode in the construction of an ideal carrier collection path presents an opportunity in the development of highly efficient organic-inorganic hybrid solar cells.
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Affiliation(s)
- Han-Don Um
- Department of Energy Engineering, Ulsan National Institute of Science and Technology (UNIST) , Ulsan 44919, Korea
| | - Deokjae Choi
- Department of Energy Engineering, Ulsan National Institute of Science and Technology (UNIST) , Ulsan 44919, Korea
| | - Ahreum Choi
- Department of Energy Engineering, Ulsan National Institute of Science and Technology (UNIST) , Ulsan 44919, Korea
| | - Ji Hoon Seo
- Department of Energy Engineering, Ulsan National Institute of Science and Technology (UNIST) , Ulsan 44919, Korea
| | - Kwanyong Seo
- Department of Energy Engineering, Ulsan National Institute of Science and Technology (UNIST) , Ulsan 44919, Korea
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Ahmad W, Bahrani MRA, Yang Z, Khan J, Jing W, Jiang F, Chu L, Liu N, Li L, Gao Y. Extraction of nano-silicon with activated carbons simultaneously from rice husk and their synergistic catalytic effect in counter electrodes of dye-sensitized solar cells. Sci Rep 2016; 6:39314. [PMID: 28000720 PMCID: PMC5175195 DOI: 10.1038/srep39314] [Citation(s) in RCA: 26] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/06/2016] [Accepted: 11/21/2016] [Indexed: 12/27/2022] Open
Abstract
The extraction of renewable energy resources particularly from earth abundant materials has always been a matter of significance in industrial products. Herein, we report a novel simultaneous extraction of nano-silicon with activated carbons (nano-Si@ACs) from rice husk (RH) by chemical activation method. As-extracted nano-Si@ACs is then used as an energy harvesting materials in counter electrodes (CEs) of dye-sensitized solar cells (DSSCs). The morphology, structure and texture studies confirm the high surface area, abundant active sites and porous structure of nano-Si@ACs. Electrochemical impedance spectroscopy and cyclic voltammetry analyses reveal that the nano-Si@ACs is highly beneficial for fast I3− reduction and superior electrolyte diffusion capability. The nano-Si@ACs CE based DSSC exhibits enhanced power conversion efficiency of (8.01%) in contrast to pristine Pt CE (7.20%). These favorable results highlight the potential application of RH in low-cost, high-efficiency and Pt-free DSSCs.
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Affiliation(s)
- Waqar Ahmad
- Center for Nanoscale Characterization &Devices (CNCD), Wuhan National Laboratory for Optoelectronics (WNLO) &School of Physics, Huazhong University of Science and Technology (HUST), Luoyu Road 1037, Wuhan 430074, P. R. China
| | - Majid Raissan Al Bahrani
- Center for Nanoscale Characterization &Devices (CNCD), Wuhan National Laboratory for Optoelectronics (WNLO) &School of Physics, Huazhong University of Science and Technology (HUST), Luoyu Road 1037, Wuhan 430074, P. R. China
| | - Zhichun Yang
- Center for Nanoscale Characterization &Devices (CNCD), Wuhan National Laboratory for Optoelectronics (WNLO) &School of Physics, Huazhong University of Science and Technology (HUST), Luoyu Road 1037, Wuhan 430074, P. R. China
| | - Jahangeer Khan
- Center for Nanoscale Characterization &Devices (CNCD), Wuhan National Laboratory for Optoelectronics (WNLO) &School of Physics, Huazhong University of Science and Technology (HUST), Luoyu Road 1037, Wuhan 430074, P. R. China
| | - Wenkui Jing
- Center for Nanoscale Characterization &Devices (CNCD), Wuhan National Laboratory for Optoelectronics (WNLO) &School of Physics, Huazhong University of Science and Technology (HUST), Luoyu Road 1037, Wuhan 430074, P. R. China
| | - Fan Jiang
- Center for Nanoscale Characterization &Devices (CNCD), Wuhan National Laboratory for Optoelectronics (WNLO) &School of Physics, Huazhong University of Science and Technology (HUST), Luoyu Road 1037, Wuhan 430074, P. R. China
| | - Liang Chu
- Center of Advanced Functional Ceramics (CAFC), Nanjing University of Posts and Telecommunications (NUPT), Nanjing 210046, P. R. China
| | - Nishuang Liu
- Center for Nanoscale Characterization &Devices (CNCD), Wuhan National Laboratory for Optoelectronics (WNLO) &School of Physics, Huazhong University of Science and Technology (HUST), Luoyu Road 1037, Wuhan 430074, P. R. China
| | - Luying Li
- Center for Nanoscale Characterization &Devices (CNCD), Wuhan National Laboratory for Optoelectronics (WNLO) &School of Physics, Huazhong University of Science and Technology (HUST), Luoyu Road 1037, Wuhan 430074, P. R. China
| | - Yihua Gao
- Center for Nanoscale Characterization &Devices (CNCD), Wuhan National Laboratory for Optoelectronics (WNLO) &School of Physics, Huazhong University of Science and Technology (HUST), Luoyu Road 1037, Wuhan 430074, P. R. China.,Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, 368 Youyi Avenue, Wuhan 430062, P. R. China
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12
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Jiang Y, Gong X, Qin R, Liu H, Xia C, Ma H. Efficiency Enhancement Mechanism for Poly(3, 4-ethylenedioxythiophene):Poly(styrenesulfonate)/Silicon Nanowires Hybrid Solar Cells Using Alkali Treatment. NANOSCALE RESEARCH LETTERS 2016; 11:267. [PMID: 27225423 PMCID: PMC4880617 DOI: 10.1186/s11671-016-1450-5] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/16/2016] [Accepted: 04/22/2016] [Indexed: 05/18/2023]
Abstract
The efficiency enhancement mechanism of the alkali-treated Si nanowire (SiNW) solar cells is discussed and analyzed in detail, which is important to control the useful photovoltaic process. All the results demonstrate that the photovoltaic performance enhancement of alkali-treated SiNW device steps from the formation of the good core-shell heterojunction, which consequently enhances the junction area, promotes fast separating and transporting of electron and hole pairs, and reduces the carrier surface combination. It also indicates that alkali treatment for SiNWs is a promising processing as an economical method for the formation of good core-shell SiNW/polymer heterojunction.
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Affiliation(s)
- Yurong Jiang
- College of Physics & Materials Science, Henan Province Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang, 453007, China.
| | - Xiu Gong
- College of Physics & Materials Science, Henan Province Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang, 453007, China
| | - Ruiping Qin
- College of Physics & Materials Science, Henan Province Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang, 453007, China
| | - Hairui Liu
- College of Physics & Materials Science, Henan Province Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang, 453007, China
| | - Congxin Xia
- College of Physics & Materials Science, Henan Province Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang, 453007, China
| | - Heng Ma
- College of Physics & Materials Science, Henan Province Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang, 453007, China.
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13
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Cui W, Wu S, Chen F, Xia Z, Li Y, Zhang XH, Song T, Lee ST, Sun B. Silicon/Organic Heterojunction for Photoelectrochemical Energy Conversion Photoanode with a Record Photovoltage. ACS NANO 2016; 10:9411-9419. [PMID: 27617584 DOI: 10.1021/acsnano.6b04385] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Silicon (Si) is a good photon absorption material for photoelectrochemical (PEC) conversion. Recently, the relatively low photovoltage of Si-based PEC anode is one of the most significant factors limiting its performance. To achieve a high photovoltage in PEC electrode, both a large barrier height and high-quality surface passivation of Si are indispensable. However, it is still challenging to induce a large band bending and passivate Si surface simultaneously in Si-based PEC photoanodes so far, which hinders their performance. Here, we develop a simple Si/poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS) heterojunction with large band banding and excellent surface passiviation for efficient PEC conversion. A chemically modified PEDOT:PSS film acts as both a surface passiviation layer and an effective catalyst simultaneously without sacrificing band bending level. A record photovoltage for Si-based PEC photoanodes as high as 657 mV is achieved via optimizing the PEDOT:PSS film fabrication process. The density of electron state (DOS) measurement is utilized to probe the passivation quality of the organic/inorganic heterojunction, and a low DOS is found in the Si/PEDOT:PSS heterojunction, which is in accordance with the photovoltage results. The low-temperature solution-processed Si/organic heterojunction photoanode provides a high photovoltage, exhibiting the potential to be the next-generation economical photoanode in PEC applications.
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Affiliation(s)
- Wei Cui
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University , 199 Ren'ai Road, Suzhou, Jiangsu 215123, China
| | - Shan Wu
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University , 199 Ren'ai Road, Suzhou, Jiangsu 215123, China
| | - Fengjiao Chen
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University , 199 Ren'ai Road, Suzhou, Jiangsu 215123, China
| | - Zhouhui Xia
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University , 199 Ren'ai Road, Suzhou, Jiangsu 215123, China
| | - Yanguang Li
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University , 199 Ren'ai Road, Suzhou, Jiangsu 215123, China
| | - Xiao-Hong Zhang
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University , 199 Ren'ai Road, Suzhou, Jiangsu 215123, China
| | - Tao Song
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University , 199 Ren'ai Road, Suzhou, Jiangsu 215123, China
| | - Shuit-Tong Lee
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University , 199 Ren'ai Road, Suzhou, Jiangsu 215123, China
| | - Baoquan Sun
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University , 199 Ren'ai Road, Suzhou, Jiangsu 215123, China
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14
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Improved PEDOT:PSS/c-Si hybrid solar cell using inverted structure and effective passivation. Sci Rep 2016; 6:35091. [PMID: 27725714 PMCID: PMC5057131 DOI: 10.1038/srep35091] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/01/2016] [Accepted: 09/23/2016] [Indexed: 11/30/2022] Open
Abstract
The PEDOT:PSS is often used as the window layer in the normal structured PEDOT:PSS/c-Si hybrid solar cell (HSC), leading to significantly reduced response, especially in red and near-infrared region. By depositing the PEDOT:PSS on the rear side of the c-Si wafer, we developed an inverted structured HSC with much higher solar cell response in the red and near-infrared spectrum. Passivating the other side with hydrogenated amorphous silicon (a-Si:H) before electrode deposition, the minority carrier lifetime has been significantly increased and the power conversion efficiency (PCE) of the inverted HSC is improved to as high as 16.1% with an open-circuit voltage (Voc) of 634 mV, fill factor (FF) of 70.5%, and short-circuit current density (Jsc) of 36.2 mA cm−2, an improvement of 33% over the control device. The improvements are ascribed to inverted configuration and a-Si:H passivation, which can increase photon carrier generation and reduce carrier recombination, respectively. Both of them will benefit the photovoltaic performance and should be considered as effective design strategies to improve the performance of organic/c-Si HSCs.
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15
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Kim E, Cho Y, Sohn A, Hwang H, Lee YU, Kim K, Park HH, Kim J, Wu JW, Kim DW. Mie Resonance-Modulated Spatial Distributions of Photogenerated Carriers in Poly(3-hexylthiophene-2,5-diyl)/Silicon Nanopillars. Sci Rep 2016; 6:29472. [PMID: 27388122 PMCID: PMC4937449 DOI: 10.1038/srep29472] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/08/2016] [Accepted: 06/20/2016] [Indexed: 01/19/2023] Open
Abstract
Organic/silicon hybrid solar cells have great potential as low-cost, high-efficiency photovoltaic devices. The superior light trapping capability, mediated by the optical resonances, of the organic/silicon hybrid nanostructure-based cells enhances their optical performance. In this work, we fabricated Si nanopillar (NP) arrays coated with organic semiconductor, poly(3-hexylthiophene-2,5-diyl), layers. Experimental and calculated optical properties of the samples showed that Mie-resonance strongly concentrated incoming light in the NPs. Spatial mapping of surface photovoltage, i.e., changes in the surface potential under illumination, using Kelvin probe force microscopy enabled us to visualize the local behavior of the photogenerated carriers in our samples. Under red light, surface photovoltage was much larger (63 meV) on the top surface of a NP than on a planar sample (13 meV), which demonstrated that the confined light in the NPs produced numerous carriers within the NPs. Since the silicon NPs provide pathways for efficient carrier transportation, high collection probability of the photogenerated carriers near the NPs can be expected. This suggests that the optical resonance in organic/silicon hybrid nanostructures benefits not only broad-band light trapping but also efficient carrier collection.
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Affiliation(s)
- Eunah Kim
- Department of Physics, Ewha Womans University, Seoul 120-750, Korea
| | - Yunae Cho
- Department of Physics, Ewha Womans University, Seoul 120-750, Korea
| | - Ahrum Sohn
- Department of Physics, Ewha Womans University, Seoul 120-750, Korea
| | - Heewon Hwang
- Department of Chemistry and Nano Science, Ewha Womans University, Seoul 120-750, Korea
| | - Y U Lee
- Department of Physics, Ewha Womans University, Seoul 120-750, Korea
| | - Kyungkon Kim
- Department of Chemistry and Nano Science, Ewha Womans University, Seoul 120-750, Korea
| | - Hyeong-Ho Park
- Applied Device and Material Lab., Device Technology Division, Korea Advanced Nanofab Center (KANC), Suwon 443-270, Korea
| | - Joondong Kim
- Department of Electrical Engineering, Incheon National University, Incheon 406-772, Korea
| | - J W Wu
- Department of Physics, Ewha Womans University, Seoul 120-750, Korea
| | - Dong-Wook Kim
- Department of Physics, Ewha Womans University, Seoul 120-750, Korea
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16
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Dai X, Chen T, Cai H, Wen H, Sun Y. Improving Performance of Organic-Silicon Heterojunction Solar Cells Based on Textured Surface via Acid Processing. ACS APPLIED MATERIALS & INTERFACES 2016; 8:14572-14577. [PMID: 27232372 DOI: 10.1021/acsami.6b03164] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
UNLABELLED Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) ( PEDOT PSS) is widely applied in organic-photoelectronic devices due to its excellent transparency and conductivity. However, when it is used in the organic-silicon heterojunction solar cells with traditional pyramid texturing surface, the device performance is limited by the contact between the PEDOT PSS and silicon wafer at the bottom of the pyramids. We optimized the structure of the bottom of the pyramids via acid isotropic etching (AIE) method with mixed acid solution to ensure that the silicon wafer is fully covered by the PEDOT PSS. In addition, hydrogenated amorphous silicon thin films were deposited with PEVCD method as the passivation and back surface field (BSF) layer to decrease the rear surface recombination rate, thus increasing the long wavelength response. Finally, a power conversion efficiency of 13.78% was achieved after depositing MoO3 on the front of the device as the antireflection layer.
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Affiliation(s)
- Xiaowan Dai
- Institute of Photo-electronic Thin Film Devices and Technology and ‡Department of Electronic Science and Engineering, College of Electronic Information and Optical Engineering, Nankai University , Tianjin, China , 300071
| | - Tao Chen
- Institute of Photo-electronic Thin Film Devices and Technology and ‡Department of Electronic Science and Engineering, College of Electronic Information and Optical Engineering, Nankai University , Tianjin, China , 300071
| | - Hongkun Cai
- Institute of Photo-electronic Thin Film Devices and Technology and ‡Department of Electronic Science and Engineering, College of Electronic Information and Optical Engineering, Nankai University , Tianjin, China , 300071
| | - Hongbin Wen
- Institute of Photo-electronic Thin Film Devices and Technology and ‡Department of Electronic Science and Engineering, College of Electronic Information and Optical Engineering, Nankai University , Tianjin, China , 300071
| | - Yun Sun
- Institute of Photo-electronic Thin Film Devices and Technology and ‡Department of Electronic Science and Engineering, College of Electronic Information and Optical Engineering, Nankai University , Tianjin, China , 300071
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17
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Zhang H, Zhang X, Liu C, Lee ST, Jie J. High-Responsivity, High-Detectivity, Ultrafast Topological Insulator Bi2Se3/Silicon Heterostructure Broadband Photodetectors. ACS NANO 2016; 10:5113-22. [PMID: 27116332 DOI: 10.1021/acsnano.6b00272] [Citation(s) in RCA: 121] [Impact Index Per Article: 15.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/04/2023]
Abstract
As an exotic state of quantum matter, topological insulators have promising applications in new-generation electronic and optoelectronic devices. The realization of these applications relies critically on the preparation and properties understanding of high-quality topological insulators, which however are mainly fabricated by high-cost methods like molecular beam epitaxy. We here report the successful preparation of high-quality topological insulator Bi2Se3/Si heterostructure having an atomically abrupt interface by van der Waals epitaxy growth of Bi2Se3 films on Si wafer. A simple, low-cost physical vapor deposition (PVD) method was employed to achieve the growth of the Bi2Se3 films. The Bi2Se3/Si heterostructure exhibited excellent diode characteristics with a pronounced photoresponse under light illumination. The built-in potential at the Bi2Se3/Si interface greatly facilitated the separation and transport of photogenerated carriers, enabling the photodetector to have a high light responsivity of 24.28 A W(-1), a high detectivity of 4.39 × 10(12) Jones (Jones = cm Hz(1/2) W(-1)), and a fast response speed of aproximately microseconds. These device parameters represent the highest values for topological insulator-based photodetectors. Additionally, the photodetector possessed broadband detection ranging from ultraviolet to optical telecommunication wavelengths. Given the simple device architecture and compatibility with silicon technology, the topological insulator Bi2Se3/Si heterostructure holds great promise for high-performance electronic and optoelectronic applications.
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Affiliation(s)
- Hongbin Zhang
- Institute of Functional Nano & Soft Materials (FUNSOM), Collaborative Innovation Center of Suzhou Nano Science and Technology, Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University , Suzhou, Jiangsu 215123, P. R. China
| | - Xiujuan Zhang
- Institute of Functional Nano & Soft Materials (FUNSOM), Collaborative Innovation Center of Suzhou Nano Science and Technology, Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University , Suzhou, Jiangsu 215123, P. R. China
| | - Chang Liu
- Institute of Functional Nano & Soft Materials (FUNSOM), Collaborative Innovation Center of Suzhou Nano Science and Technology, Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University , Suzhou, Jiangsu 215123, P. R. China
| | - Shuit-Tong Lee
- Institute of Functional Nano & Soft Materials (FUNSOM), Collaborative Innovation Center of Suzhou Nano Science and Technology, Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University , Suzhou, Jiangsu 215123, P. R. China
| | - Jiansheng Jie
- Institute of Functional Nano & Soft Materials (FUNSOM), Collaborative Innovation Center of Suzhou Nano Science and Technology, Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University , Suzhou, Jiangsu 215123, P. R. China
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18
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Liu Y, Zhang ZG, Xia Z, Zhang J, Liu Y, Liang F, Li Y, Song T, Yu X, Lee ST, Sun B. High Performance Nanostructured Silicon-Organic Quasi p-n Junction Solar Cells via Low-Temperature Deposited Hole and Electron Selective Layer. ACS NANO 2016; 10:704-12. [PMID: 26695703 DOI: 10.1021/acsnano.5b05732] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/20/2023]
Abstract
UNLABELLED Silicon-organic solar cells based on conjugated polymers such as poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) ( PEDOT PSS) on n-type silicon (n-Si) attract wide interest because of their potential for cost-effectiveness and high-efficiency. However, a lower barrier height (Φb) and a shallow built in potential (Vbi) of Schottky junction between n-Si and PEDOT PSS hinders the power conversion efficiency (PCE) in comparison with those of traditional p-n junction. Here, a strong inversion layer was formed on n-Si surface by inserting a layer of 1, 4, 5, 8, 9, 11-hexaazatriphenylene hexacarbonitrile (HAT-CN), resulting in a quasi p-n junction. External quantum efficiency spectra, capacitance-voltage, transient photovoltage decay and minority charge carriers life mapping measurements indicated that a quasi p-n junction was built due to the strong inversion effect, resulting in a high Φb and Vbi. The quasi p-n junction located on the front surface region of silicon substrates improved the short wavelength light conversion into photocurrent. In addition, a derivative perylene diimide (PDIN) layer between rear side of silicon and aluminum cathodes was used to block the holes from flowing to cathodes. As a result, the device with PDIN layer also improved photoresponse at longer wavelength. A champion PCE of 14.14% was achieved for the nanostructured silicon-organic device by combining HAT-CN and PDIN layers. The low temperature and simple device structure with quasi p-n junction promises cost-effective high performance photovoltaic techniques.
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Affiliation(s)
- Yuqiang Liu
- Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University , Suzhou 215123, China
| | - Zhi-Guo Zhang
- Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences , Beijing 100190, China
| | - Zhouhui Xia
- Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University , Suzhou 215123, China
| | - Jie Zhang
- Department of Electronic Engineering, The Chinese University of Hong Kong , New Territories, Hong Kong, China
| | - Yuan Liu
- Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University , Suzhou 215123, China
| | - Feng Liang
- Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University , Suzhou 215123, China
| | - Yongfang Li
- Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences , Beijing 100190, China
| | - Tao Song
- Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University , Suzhou 215123, China
| | - Xuegong Yu
- State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University , Hangzhou 310027, China
| | - Shuit-Tong Lee
- Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University , Suzhou 215123, China
| | - Baoquan Sun
- Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University , Suzhou 215123, China
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19
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Yu X, Shen X, Mu X, Zhang J, Sun B, Zeng L, Yang L, Wu Y, He H, Yang D. High Efficiency Organic/Silicon-Nanowire Hybrid Solar Cells: Significance of Strong Inversion Layer. Sci Rep 2015; 5:17371. [PMID: 26610848 PMCID: PMC4661700 DOI: 10.1038/srep17371] [Citation(s) in RCA: 52] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/20/2015] [Accepted: 10/29/2015] [Indexed: 11/09/2022] Open
Abstract
UNLABELLED Organic/silicon nanowires (SiNWs) hybrid solar cells have recently been recognized as one of potentially low-cost candidates for photovoltaic application. Here, we have controllably prepared a series of uniform silicon nanowires (SiNWs) with various diameters on silicon substrate by metal-assisted chemical etching followed by thermal oxidization, and then fabricated the organic/SiNWs hybrid solar cells with poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) ( PEDOT PSS). It is found that the reflective index of SiNWs layer for sunlight depends on the filling ratio of SiNWs. Compared to the SiNWs with the lowest reflectivity (LR-SiNWs), the solar cell based on the SiNWs with low filling ratio (LF-SiNWs) has a higher open-circuit voltage and fill factor. The capacitance-voltage measurements have clarified that the built-in potential barrier at the LF-SiNWs/ PEDOT PSS interface is much larger than that at the LR-SiNWs/PEDOT one, which yields a strong inversion layer generating near the silicon surface. The formation of inversion layer can effectively suppress the carrier recombination, reducing the leakage current of solar cell, and meanwhile transfer the LF-SiNWs/ PEDOT PSS device into a p-n junction. As a result, a highest efficiency of 13.11% is achieved for the LF-SiNWs/ PEDOT PSS solar cell. These results pave a way to the fabrication of high efficiency organic/SiNWs hybrid solar cells.
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Affiliation(s)
- Xuegong Yu
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Xinlei Shen
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Xinhui Mu
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Jie Zhang
- Institute of Functional Nano and Soft Materials (FUNSOM) &Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215123, China
| | - Baoquan Sun
- Institute of Functional Nano and Soft Materials (FUNSOM) &Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215123, China
| | - Lingsheng Zeng
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Lifei Yang
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Yichao Wu
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Hang He
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Deren Yang
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
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20
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Elbersen R, Vijselaar W, Tiggelaar RM, Gardeniers H, Huskens J. Fabrication and Doping Methods for Silicon Nano- and Micropillar Arrays for Solar-Cell Applications: A Review. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2015; 27:6781-6796. [PMID: 26436660 DOI: 10.1002/adma.201502632] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/02/2015] [Revised: 07/13/2015] [Indexed: 06/05/2023]
Abstract
Silicon is one of the main components of commercial solar cells and is used in many other solar-light-harvesting devices. The overall efficiency of these devices can be increased by the use of structured surfaces that contain nanometer- to micrometer-sized pillars with radial p/n junctions. High densities of such structures greatly enhance the light-absorbing properties of the device, whereas the 3D p/n junction geometry shortens the diffusion length of minority carriers and diminishes recombination. Due to the vast silicon nano- and microfabrication toolbox that exists nowadays, many versatile methods for the preparation of such highly structured samples are available. Furthermore, the formation of p/n junctions on structured surfaces is possible by a variety of doping techniques, in large part transferred from microelectronic circuit technology. The right choice of doping method, to achieve good control of junction depth and doping level, can contribute to an improvement of the overall efficiency that can be obtained in devices for energy applications. A review of the state-of-the-art of the fabrication and doping of silicon micro and nanopillars is presented here, as well as of the analysis of the properties and geometry of thus-formed 3D-structured p/n junctions.
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Affiliation(s)
- Rick Elbersen
- Molecular Nanofabrication, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500, AE, Enschede, The Netherlands
- Mesoscale Chemical Systems, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500, AE, Enschede, The Netherlands
| | - Wouter Vijselaar
- Molecular Nanofabrication, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500, AE, Enschede, The Netherlands
| | - Roald M Tiggelaar
- Mesoscale Chemical Systems, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500, AE, Enschede, The Netherlands
| | - Han Gardeniers
- Mesoscale Chemical Systems, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500, AE, Enschede, The Netherlands
| | - Jurriaan Huskens
- Molecular Nanofabrication, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500, AE, Enschede, The Netherlands
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21
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Jin Y, Zhang S, Zhu B, Tan Y, Hu X, Zong L, Zhu J. Simultaneous Purification and Perforation of Low-Grade Si Sources for Lithium-Ion Battery Anode. NANO LETTERS 2015; 15:7742-7747. [PMID: 26492222 DOI: 10.1021/acs.nanolett.5b03932] [Citation(s) in RCA: 19] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Silicon is regarded as one of the most promising candidates for lithium-ion battery anodes because of its abundance and high theoretical capacity. Various silicon nanostructures have been heavily investigated to improve electrochemical performance by addressing issues related to structure fracture and unstable solid-electrolyte interphase (SEI). However, to further enable widespread applications, scalable and cost-effective processes need to be developed to produce these nanostructures at large quantity with finely controlled structures and morphologies. In this study, we develop a scalable and low cost process to produce porous silicon directly from low grade silicon through ball-milling and modified metal-assisted chemical etching. The morphology of porous silicon can be drastically changed from porous-network to nanowire-array by adjusting the component in reaction solutions. Meanwhile, this perforation process can also effectively remove the impurities and, therefore, increase Si purity (up to 99.4%) significantly from low-grade and low-cost ferrosilicon (purity of 83.4%) sources. The electrochemical examinations indicate that these porous silicon structures with carbon treatment can deliver a stable capacity of 1287 mAh g(-1) over 100 cycles at a current density of 2 A g(-1). This type of purified porous silicon with finely controlled morphology, produced by a scalable and cost-effective fabrication process, can also serve as promising candidates for many other energy applications, such as thermoelectrics and solar energy conversion devices.
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Affiliation(s)
- Yan Jin
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China
| | - Su Zhang
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China
| | - Bin Zhu
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China
| | - Yingling Tan
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China
| | - Xiaozhen Hu
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China
| | - Linqi Zong
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China
| | - Jia Zhu
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China
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22
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Zhu B, Jin Y, Tan Y, Zong L, Hu Y, Chen L, Chen Y, Zhang Q, Zhu J. Scalable Production of Si Nanoparticles Directly from Low Grade Sources for Lithium-Ion Battery Anode. NANO LETTERS 2015; 15:5750-5754. [PMID: 26258439 DOI: 10.1021/acs.nanolett.5b01698] [Citation(s) in RCA: 21] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Silicon, one of the most promising candidates as lithium-ion battery anode, has attracted much attention due to its high theoretical capacity, abundant existence, and mature infrastructure. Recently, Si nanostructures-based lithium-ion battery anode, with sophisticated structure designs and process development, has made significant progress. However, low cost and scalable processes to produce these Si nanostructures remained as a challenge, which limits the widespread applications. Herein, we demonstrate that Si nanoparticles with controlled size can be massively produced directly from low grade Si sources through a scalable high energy mechanical milling process. In addition, we systematically studied Si nanoparticles produced from two major low grade Si sources, metallurgical silicon (∼99 wt % Si, $1/kg) and ferrosilicon (∼83 wt % Si, $0.6/kg). It is found that nanoparticles produced from ferrosilicon sources contain FeSi2, which can serve as a buffer layer to alleviate the mechanical fractures of volume expansion, whereas nanoparticles from metallurgical Si sources have higher capacity and better kinetic properties because of higher purity and better electronic transport properties. Ferrosilicon nanoparticles and metallurgical Si nanoparticles demonstrate over 100 stable deep cycling after carbon coating with the reversible capacities of 1360 mAh g(-1) and 1205 mAh g(-1), respectively. Therefore, our approach provides a new strategy for cost-effective, energy-efficient, large scale synthesis of functional Si electrode materials.
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Affiliation(s)
- Bin Zhu
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China
| | - Yan Jin
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China
| | - Yingling Tan
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China
| | - Linqi Zong
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China
| | - Yue Hu
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China
| | - Lei Chen
- Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University , Suzhou 215123, China
| | - Yanbin Chen
- School of Physics, Nanjing University , Nanjing 210093, China
| | - Qiao Zhang
- Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University , Suzhou 215123, China
| | - Jia Zhu
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China
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He J, Gao P, Liao M, Yang X, Ying Z, Zhou S, Ye J, Cui Y. Realization of 13.6% Efficiency on 20 μm Thick Si/Organic Hybrid Heterojunction Solar Cells via Advanced Nanotexturing and Surface Recombination Suppression. ACS NANO 2015; 9:6522-31. [PMID: 26047260 DOI: 10.1021/acsnano.5b02432] [Citation(s) in RCA: 16] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/20/2023]
Abstract
Hybrid silicon/polymer solar cells promise to be an economically feasible alternative energy solution for various applications if ultrathin flexible crystalline silicon (c-Si) substrates are used. However, utilization of ultrathin c-Si encounters problems in light harvesting and electronic losses at surfaces, which severely degrade the performance of solar cells. Here, we developed a metal-assisted chemical etching method to deliver front-side surface texturing of hierarchically bowl-like nanopores on 20 μm c-Si, enabling an omnidirectional light harvesting over the entire solar spectrum as well as an enlarged contact area with the polymer. In addition, a back surface field was introduced on the back side of the thin c-Si to minimize the series resistance losses as well as to suppress the surface recombination by the built high-low junction. Through these improvements, a power conversion efficiency (PCE) up to 13.6% was achieved under an air mass 1.5 G irradiation for silicon/organic hybrid solar cells with the c-Si thickness of only about 20 μm. This PCE is as high as the record currently reported in hybrid solar cells constructed from bulk c-Si, suggesting a design rule for efficient silicon/organic solar cells with thinner absorbers.
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Affiliation(s)
- Jian He
- †Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China
| | - Pingqi Gao
- †Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China
| | - Mingdun Liao
- †Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China
| | - Xi Yang
- †Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China
| | - Zhiqin Ying
- †Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China
| | - Suqiong Zhou
- †Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China
| | - Jichun Ye
- †Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China
| | - Yi Cui
- ‡Department of Material Science and Engineering, Stanford University, Stanford, California 94305, United States
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