Emergent phenomena induced by spin–orbit coupling at surfaces and interfaces

Realization of a 2D Lieb Lattice in a Metal-Inorganic Framework with Partial Flat Bands and Topological Edge States

Flat bands and Dirac cones in materials are the source of the exotic electronic and topological properties. The Lieb lattice is expected to host these electronic structures, arising from quantum destructive interference. Nevertheless, the experimental realization of a 2D Lieb lattice remained challenging to date due to its intrinsic structural instability. After computationally designing a Platinum-Phosphorus (Pt-P) Lieb lattice, it has successfully overcome its structural instability and synthesized on a gold substrate via molecular beam epitaxy. Low-temperature scanning tunneling microscopy and spectroscopy verify the Lieb lattice's morphology and electronic flat bands. Furthermore, topological Dirac edge states stemming from pronounced spin-orbit coupling induced by heavy Pt atoms are predicted. These findings convincingly open perspectives for creating metal-inorganic framework-based atomic lattices, offering prospects for strongly correlated phases interplayed with topology.

Realization of skyrmion shift register

The big data explosion demands novel data storage technology. Among many different approaches, solitonic racetrack memory devices hold great promise for accommodating nonvolatile and low-power functionalities. As representative topological solitons, magnetic skyrmions are envisioned as potential information carriers for efficient information processing. While their advantages as memory and logic elements have been vastly exploited from theoretical perspectives, the corresponding experimental efforts are rather limited. These challenges, which are key to versatile skyrmionic devices, will be studied in this work. Through patterning concaved surface topography with designed arrays of indentations on standard Si/SiO2 substrates, we demonstrate that the resultant non-flat energy landscape could lead to the formation of hexagonal and square skyrmion lattices in Ta/CoFeB/MgO multilayers. Based on these films, one-dimensional racetrack devices are subsequently fabricated, in which a long-distance deterministic shifting of skyrmions between neighboring indentations is achieved at room temperature. Through separating the word line and the bit line, a prototype shift register device, which can sequentially generate and precisely shift complex skyrmionic data strings, is presented. The deterministic writing and long-distance shifting of skyrmionic bits can find potential applications in transformative skyrmionic memory, logic as well as the in-memory computing devices.

Emergence of Interfacial Magnetism in Strongly-Correlated Nickelate-Titanate Superlattices

Strongly-correlated transition-metal oxides are widely known for their various exotic phenomena. This is exemplified by rare-earth nickelates such as LaNiO3, which possess intimate interconnections between their electronic, spin, and lattice degrees of freedom. Their properties can be further enhanced by pairing them in hybrid heterostructures, which can lead to hidden phases and emergent phenomena. An important example is the LaNiO3/LaTiO3 superlattice, where an interlayer electron transfer has been observed from LaTiO3 into LaNiO3 leading to a high-spin state. However, macroscopic emergence of magnetic order associated with this high-spin state has so far not been observed. Here, by using muon spin rotation, x-ray absorption, and resonant inelastic x-ray scattering, direct evidence of an emergent antiferromagnetic order with high magnon energy and exchange interactions at the LaNiO3/LaTiO3 interface is presented. As the magnetism is purely interfacial, a single LaNiO3/LaTiO3 interface can essentially behave as an atomically thin strongly-correlated quasi-2D antiferromagnet, potentially allowing its technological utilization in advanced spintronic devices. Furthermore, its strong quasi-2D magnetic correlations, orbitally-polarized planar ligand holes, and layered superlattice design make its electronic, magnetic, and lattice configurations resemble the precursor states of superconducting cuprates and nickelates, but with an S→1 spin state instead.

Giant chiral magnetoelectric oscillations in a van der Waals multiferroic

Helical spin structures are expressions of magnetically induced chirality, entangling the dipolar and magnetic orders in materials1-4. The recent discovery of helical van der Waals multiferroics down to the ultrathin limit raises prospects of large chiral magnetoelectric correlations in two dimensions5,6. However, the exact nature and magnitude of these couplings have remained unknown so far. Here we perform a precision measurement of the dynamical magnetoelectric coupling for an enantiopure domain in an exfoliated van der Waals multiferroic. We evaluate this interaction in resonance with a collective electromagnon mode, capturing the impact of its oscillations on the dipolar and magnetic orders of the material with a suite of ultrafast optical probes. Our data show a giant natural optical activity at terahertz frequencies, characterized by quadrature modulations between the electric polarization and magnetization components. First-principles calculations further show that these chiral couplings originate from the synergy between the non-collinear spin texture and relativistic spin-orbit interactions, resulting in substantial enhancements over lattice-mediated effects. Our findings highlight the potential for intertwined orders to enable unique functionalities in the two-dimensional limit and pave the way for the development of van der Waals magnetoelectric devices operating at terahertz speeds.

Spin Gapless Quantum Materials and Devices

Quantum materials, with nontrivial quantum phenomena and mechanisms, promise efficient quantum technologies with enhanced functionalities. Quantum technology is held back because a gap between fundamental science and its implementation is not fully understood yet. In order to capitalize the quantum advantage, a new perspective is required to figure out and close this gap. In this review, spin gapless quantum materials, featured by fully spin-polarized bands and the electron/hole transport, are discussed from the perspective of fundamental understanding and device applications. Spin gapless quantum materials can be simulated by minimal two-band models and could help to understand band structure engineering in various topological quantum materials discovered so far. It is explicitly highlighted that various types of spin gapless band dispersion are fundamental ingredients to understand quantum anomalous Hall effect. Based on conventional transport in the bulk and topological transport on the boundaries, various spintronic device aspects of spin gapless quantum materials as well as their advantages in different models for topological field effect transistors are reviewed.

Tunable charge transport properties in non-stoichiometric SrIrO3thin films

Delving into the intricate interplay between spin-orbit coupling and Coulomb correlations in strongly correlated oxides, particularly perovskite compounds, has unveiled a rich landscape of exotic phenomena ranging from unconventional superconductivity to the emergence of topological phases. In this study, we have employed pulsed laser deposition technique to grow SrIrO3(SIO) thin films on SrTiO3substrates, systematically varying the oxygen content during the post-deposition annealing. X-ray photoelectron spectroscopy (XPS) provided insights into the stoichiometry and spin-orbit splitting energy of Iridium within the SIO film, while high-resolution x-ray studies meticulously examined the structural integrity of the thin films. Remarkably, our findings indicate a decrease in the metallicity of SIO thin films with reduced annealing O2partial pressure. Furthermore, we carried out magneto-transport studies on the SIO thin films, the results revealed intriguing insights into spin transport as a function of oxygen content. The tunability of the electronic band structure of SIO films with varying oxygen vacancy is correlated with the density functional theory calculations. Our findings elucidate the intricate mechanisms dictating spin transport properties in SIO thin films, offering invaluable guidance for the design and optimization of spintronic devices based on complex oxide materials. Notably, the ability to tune bandwidth by varying post-annealing oxygen partial pressure in iridate-based spintronic materials holds significant promise for advancing technological applications in the spintronics domain.

Spin-wave dynamics in perpendicularly magnetized antidot multilayers

Using all-optical time-resolved magneto-optical Kerr effect measurements we demonstrate an efficient modulation of the spin-wave (SW) dynamics via the bias magnetic field orientation around nanoscale diamond shaped antidots that are arranged on a square lattice within a [Co(0.75 nm)/Pd(0.9 nm)]8multilayer with perpendicular magnetic anisotropy (PMA). Micromagnetic modeling of the experimental results reveals that the SW modes in the lower frequency regime are related to narrow shell regions around the antidots, where in-plane (IP) domain structures are formed due to the reduced PMA, caused by Ga+ion irradiation during the focused ion beam milling process of antidot fabrication. The IP direction of the shell magnetization undergoes a striking change with magnetic field orientation, leading to the sharp variation of the edge localized (shell) SW modes. Nevertheless, the coupling between such edge localized and bulk SWs for different orientations of bias field in PMA systems gives rise to interesting Physics and attests to new prospects for developing energy efficient and hybrid-system-based next-generation nanoscale magnonic devices.

Influence of the Hall-bar geometry on texture-induced topological spin transport in two-dimensional Rashba spin-orbit ferromagnets

While the recent prediction and observation of magnetic skyrmions bears inspiring promise for next-generation spintronic devices, how to detect and track their position becomes an important issue. In this work, we investigate the spin transport in a two-dimensional magnetic nanoribbon with the Hall-bar geometry in the presence of Rashba spin-orbit coupling and magnetic skyrmions. We employ the Kwant tight-binding code to compute the Hall conductance and local spin-polarized current density. We consider two versions of the model: One with single skyrmion and one with two separate skyrmions. It is found that the size and position of the skyrmions strongly modulate the Hall conductance near the Hall-bar position. The geometry of the Hall bar also has a strong influence on the Hall conductance of the system. With the decreasing of the width of Hall leads, the peak of Hall conductance becomes sharper. We also show the spatial distribution of the spin-polarized current density around a skyrmion located at different positions. We extend this study toward two separate skyrmions, where the Hall conductance also reveals a sizable dependence on the position of the skyrmions and their distance. Our numerical analysis offers the possibility of electrically detecting the skyrmion position, which could have potential applications in ultrahigh-density storage design.

Rashba splitting in polar-nonpolar sandwich heterostructure: a DFT study

In this study, we employ density functional theory based first-principles calculations to investigate the spin-orbit effects in the electronic structure of a polar-nonpolar sandwich heterostructure namelyLaAlO3/SrTiO3/LaAlO3. Our focus on theTi-3dbands reveals an inverted ordering of theSrTiO3-t2gorbital near the n-type interface, which is consistent with earlier experimental work. In contrast, toward the p-type interface, the orbital ordering aligns with the natural ordering ofSrTiO3orbitals, influenced by crystal field splitting. In the presence of SOC, a notable inter-orbital coupling betweent2gandegorbitals is observed within the tetragonal slab, a phenomenon not reported before in theSrTiO3-based 2D systems. Additionally, our observations highlight that the cubic Rashba splitting in this system surpasses the linear Rashba splitting, contrary to experimental findings. This comprehensive analysis contributes to a refined understanding of the role of orbital mixing in Rashba splitting in the sandwich oxide heterostructures.

Chirality-Induced Magnet-Free Spin Generation in a Semiconductor

Electrical generation and transduction of polarized electron spins in semiconductors (SCs) are of central interest in spintronics and quantum information science. While spin generation in SCs is frequently realized via electrical injection from a ferromagnet (FM), there are significant advantages in nonmagnetic pathways of creating spin polarization. One such pathway exploits the interplay of electron spin with chirality in electronic structures or real space. Here, utilizing chirality-induced spin selectivity (CISS), the efficient creation of spin accumulation in n-doped GaAs via electric current injection from a normal metal (Au) electrode through a self-assembled monolayer (SAM) of chiral molecules (α-helix l-polyalanine, AHPA-L), is demonstrated. The resulting spin polarization is detected as a Hanle effect in the n-GaAs, which is found to obey a distinct universal scaling with temperature and bias current consistent with chirality-induced spin accumulation. The experiment constitutes a definitive observation of CISS in a fully nonmagnetic device structure and demonstration of its ability to generate spin accumulation in a conventional SC. The results thus place key constraints on the physical mechanism of CISS and present a new scheme for magnet-free SC spintronics.

Rashba-like Spin Textures in Graphene Promoted by Ferromagnet-Mediated Electronic Hybridization with a Heavy Metal

Epitaxial graphene/ferromagnetic metal (Gr/FM) heterostructures deposited onto heavy metals have been proposed for the realization of spintronic devices because of their perpendicular magnetic anisotropy and sizable Dzyaloshinskii-Moriya interaction (DMI), allowing for both enhanced thermal stability and stabilization of chiral spin textures. However, establishing routes toward this goal requires the fundamental understanding of the microscopic origin of their unusual properties. Here, we elucidate the nature of the induced spin-orbit coupling (SOC) at Gr/Co interfaces on Ir. Through spin- and angle-resolved photoemission spectroscopy along with density functional theory, we show that the interaction of the heavy metals with the Gr layer via hybridization with the FM is the source of strong SOC in the Gr layer. Furthermore, our studies on ultrathin Co films underneath Gr reveal an energy splitting of ∼100 meV for in-plane and negligible for out-of-plane spin polarized Gr π-bands, consistent with a Rashba-SOC at the Gr/Co interface, which is either the fingerprint or the origin of the DMI. This mechanism vanishes at large Co thicknesses, where neither in-plane nor out-of-plane spin-orbit splitting is observed, indicating that Gr π-states are electronically decoupled from the heavy metal. The present findings are important for future applications of Gr-based heterostructures in spintronic devices.

Coexistence of Ferromagnetism and Superconductivity at KTaO3 Heterointerfaces

The coexistence of superconductivity and ferromagnetism is a long-standing issue in superconductivity due to the antagonistic nature of these two ordered states. Experimentally identifying and characterizing novel heterointerface superconductors that coexist with magnetism presents significant challenges. Here, we report the observation of two-dimensional long-range ferromagnetic order in a KTaO3 heterointerface superconductor, showing the coexistence of superconductivity and ferromagnetism. Remarkably, our direct current superconducting quantum interference device measurements reveal an in-plane magnetization hysteresis loop persisting above room temperature. Moreover, first-principles calculations and X-ray magnetic circular dichroism measurements provide decisive insights into the origin of the observed robust ferromagnetism, attributing it to oxygen vacancies that localize electrons in nearby Ta 5d states. Our findings suggest KTaO3 heterointerfaces as time-reversal symmetry breaking superconductors, injecting fresh momentum into the exploration of the intricate interplay between superconductivity and magnetism enhanced by the strong spin-orbit coupling inherent to the heavy Ta in 5d orbitals.

Angular-dependent magnetoresistance modulated by interfacial magnetic state in Pt/LSMO heterostructures

The interfaces between heavy metals and antiferromagnetic materials have garnered significant attention due to their interesting physical properties. La0.35Sr0.65MnO3 (LSMO), as a typical manganite, exhibits an antiferromagnetic ground state that can be controlled through epitaxial strain and interfacial spin-orbit coupling. In this work, we reported the diverse magnetoresistance, influenced by the interfacial magnetic state, in Pt (3 nm)/LSMO (6-20 nm) heterostructures. The strong spin-orbit coupling of Pt and Dzyaloshinskii-Moriya interaction alter the spin structure and enhance the electron scattering at the Pt/LSMO interface, resulting in positive magnetoresistance. The interfacial angular-dependent magnetoresistance modulated by the interfacial magnetic states was also observed in the Pt/LSMO (20 nm) heterostructures. Our findings contribute to a broader understanding of interfacial properties between heavy metals and antiferromagnetic manganites.

Field-Free Manipulation of Two-Dimensional Ferromagnet CrTe2 by Spin-Orbit Torques

Electrical manipulation of magnetic states in two-dimensional ferromagnetic systems is crucial in information storage and low-dimensional spintronics. Spin-orbit torque presents a rapid and energy-efficient method for electrical control of the magnetization. In this letter, we demonstrate a wafer-scale spin-orbit torque switching of two-dimensional ferromagnetic states. Using molecular beam epitaxy, we fabricate two-dimensional heterostructures composed of low crystal-symmetry WTe2 and ferromagnet CrTe2 with perpendicular anisotropy. By utilizing out-of-plane spins generated from WTe2, we achieve field-free switching of the CrTe2 perpendicular magnetization. The threshold switching current density in CrTe2/WTe2 is 1.2 × 106 A/cm2, 20 times smaller than that of the CrTe2/Pt control sample even with an external magnetic field. In addition, the switching behavior can be modulated by external magnetic fields and crystal symmetry. Our findings demonstrate a controllable and all-electric manipulation of perpendicular magnetization in a two-dimensional ferromagnet, representing a significant advancement toward the practical implementation of low-dimensional spintronic devices.

Inverse chirality-induced spin selectivity effect in chiral assemblies of π-conjugated polymers

Coupling of spin and charge currents to structural chirality in non-magnetic materials, known as chirality-induced spin selectivity, is promising for application in spintronic devices at room temperature. Although the chirality-induced spin selectivity effect has been identified in various chiral materials, its Onsager reciprocal process, the inverse chirality-induced spin selectivity effect, remains unexplored. Here we report the observation of the inverse chirality-induced spin selectivity effect in chiral assemblies of π-conjugated polymers. Using spin-pumping techniques, the inverse chirality-induced spin selectivity effect enables quantification of the magnitude of the longitudinal spin-to-charge conversion driven by chirality-induced spin selectivity in different chiral polymers. By widely tuning conductivities and supramolecular chiral structures via a printing method, we found a very long spin relaxation time of up to several nanoseconds parallel to the chiral axis. Our demonstration of the inverse chirality-induced spin selectivity effect suggests possibilities for elucidating the puzzling interplay between spin and chirality, and opens a route for spintronic applications using printable chiral assemblies.

Ferromagnetic resonance measurement with frequency modulation down to 2 K

Ferromagnetic resonance (FMR) spectroscopy is a powerful technique to study the precessional dynamics of magnetization in thin film heterostructures. It provides valuable information about the mechanisms of exchange bias, spin angular momentum transfer across interfaces, and excitation of magnons. A key desirable feature of FMR spectrometers is the capability to study magnetization dynamics over a wide phase space of temperature (T), frequency (f), and magnetic field (B). The design, fabrication, and testing of such a spectrometer, which uses frequency modulation techniques for improved detection of microwave absorption, reduces heat load in the cryostat and allows simultaneous measurements of inverse spin Hall effect (ISHE) induced dc voltages, is described in this paper. The apparatus is based on a 2-port transmitted microwave signal measurement using a grounded co-planar waveguide. The input radio frequency (RF) signal, frequency modulated at a tunable f-band, excites spin precession in the sample, and the attenuated RF signal is measured phase sensitively. The sample stage, inserted in the bore of a superconducting solenoid, allows magnetic field and temperature variability of 0 to ±5 T and 2-310 K, respectively. We demonstrate the working of this Cryo-FMR and ISHE spectrometer on thin films of Ni80Fe20 and Fe60Co20B20 over a wide T, B, and f phase space.

Spin-Orbit Torque Vector Quantification in Nanoscale Magnetic Tunnel Junctions

Spin-orbit torques (SOT) allow ultrafast, energy-efficient toggling of magnetization state by an in-plane charge current for applications such as magnetic random-access memory (SOT-MRAM). Tailoring the SOT vector comprising of antidamping (TAD) and fieldlike (TFL) torques could lead to faster, more reliable, and low-power SOT-MRAM. Here, we establish a method to quantify the longitudinal (TAD) and transverse (TFL) components of the SOT vector and its efficiency χAD and χFL, respectively, in nanoscale three-terminal SOT magnetic tunnel junctions (SOT-MTJ). Modulation of nucleation or switching field (BSF) for magnetization reversal by SOT effective fields (BSOT) leads to the modification of SOT-MTJ hysteresis loop behavior from which χAD and χFL are quantified. Surprisingly, in nanoscale W/CoFeB SOT-MTJ, we find χFL to be (i) twice as large as χAD and (ii) 6 times as large as χFL in micrometer-sized W/CoFeB Hall-bar devices. Our quantification is supported by micromagnetic and macrospin simulations which reproduce experimental SOT-MTJ Stoner-Wohlfarth astroid behavior only for χFL > χAD. Additionally, from the threshold current for current-induced magnetization switching with a transverse magnetic field, we show that in SOT-MTJ, TFL plays a more prominent role in magnetization dynamics than TAD. Due to SOT-MRAM geometry and nanodimensionality, the potential role of nonlocal spin Hall spin current accumulated adjacent to the SOT-MTJ in the mediation of TFL and χFL amplification merits to be explored.

Coupling of the Structure and Magnetism to Spin Splitting in Hybrid Organic-Inorganic Perovskites

Hybrid organic-inorganic perovskites are famous for the diversity of their chemical compositions, phases, phase transitions, and associated physical properties. We use a combination of experimental and computational techniques to reveal a strong coupling between structure, magnetism, and spin splitting in a representative of the largest family of hybrid organic-inorganic perovskites: the formates. With the help of first-principles simulations, we find spin splitting in both conduction and valence bands of [NH2NH3]Co(HCOO)3 induced by spin-orbit interactions, which can reach up to 14 meV. Our magnetic measurements reveal that this material exhibits canted antiferromagnetism below 15.5 K. The direction of the associated antiferromagnetic order parameter is strongly coupled with spin splitting in the centrosymmetric phase, allowing for the creation and annihilation of spin splitting through the application of a magnetic field. Furthermore, the structural phase transition to the experimentally observed polar Pna21 phase completely changes the aforementioned spin splitting and its coupling to magnetic degrees of freedom. This reveals that in [NH2NH3]Co(HCOO)3, the structure and magnetism are strongly coupled to spin splitting and can be manipulated through electric and magnetic fields. We believe that our findings offer an important step toward a fundamental understanding and practical applications of materials with coupled properties.

Obtaining giant Rashba-Dresselhaus spin splitting in two-dimensional chiral metal-organic frameworks

Two-dimensional (2D) nonmagnetic semiconductors with large Rashba-Dresselhaus (R-D) spin splitting at valence or conduction bands are attractive for magnetic-field-free spintronic applications. However, so far, the number of 2D R-D inorganic semiconductors has been quite limited, and the factors that determine R-D spin splitting as well as rational design of giant spin splitting, remain unclear. For this purpose, by exploiting 2D chiral metal-organic frameworks (CMOFs) as a platform, we theoretically develop a three-step screening method to obtain a series of candidate 2D R-D semiconductors with valence band spin splitting up to 97.2 meV and corresponding R-D coupling constants up to 1.37 eV Å. Interestingly, the valence band spin texture is reversible by flipping the chirality of CMOFs. Furthermore, five keys for obtaining giant R-D spin splitting in 2D CMOFs are successfully identified: (i) chirality, (ii) large spin-orbit coupling, (iii) narrow band gap, (iv) valence and conduction bands having the same symmetry at the Γ point, and (v) strong ligand field.

Revealing hidden spin polarization in centrosymmetric van der Waals materials on ultrafast timescales

One of the key challenges for spintronic and quantum technologies is to achieve active control of the spin angular momentum of electrons in nanoscale materials on ultrafast, femtosecond timescales. While conventional ferromagnetic materials and materials supporting spin texture suffer both from conceptional limitations in miniaturization and inefficiency of optical and electronic manipulation, non-magnetic centrosymmetric layered materials with hidden spin polarization may offer an alternative pathway to manipulate the spin degree of freedom by external stimuli. Here we demonstrate an approach for generating transient spin polarization on a femtosecond timescale in the otherwise spin-unpolarized band structure of the centrosymmetric 2H-stacked group VI transition metal dichalcogenide WSe2. Using ultrafast optical excitation of a fullerene layer grown on top of WSe2, we trigger an ultrafast interlayer electron transfer from the fullerene layer into the WSe2 crystal. The resulting transient charging of the C60/WSe2 interface leads to a substantial interfacial electric field that by means of spin-layer-valley locking ultimately creates ultrafast spin polarization without the need of an external magnetic field. Our findings open a novel pathway for true optical engineering of spin functionalities such as the sub-picosecond generation and manipulation of ultrafast spin currents in 2D heterostructures.

Emerging Nonlinear Photocurrents in Lead Halide Perovskites for Spintronics

Lead halide perovskites (LHPs) containing organic parts are emerging optoelectronic materials with a wide range of applications thanks to their high optical absorption, carrier mobility, and easy preparation methods. They possess spin-dependent properties, such as strong spin-orbit coupling (SOC), and are promising for spintronics. The Rashba effect in LHPs can be manipulated by a magnetic field and a polarized light field. Considering the surfaces and interfaces of LHPs, light polarization-dependent optoelectronics of LHPs has attracted attention, especially in terms of spin-dependent photocurrents (SDPs). Currently, there are intense efforts being made in the identification and separation of SDPs and spin-to-charge interconversion in LHP. Here, we provide a comprehensive review of second-order nonlinear photocurrents in LHP in regard to spintronics. First, a detailed background on Rashba SOC and its related effects (including the inverse Rashba-Edelstein effect) is given. Subsequently, nonlinear photo-induced effects leading to SDPs are presented. Then, SDPs due to the photo-induced inverse spin Hall effect and the circular photogalvanic effect, together with photocurrent due to the photon drag effect, are compared. This is followed by the main focus of nonlinear photocurrents in LHPs containing organic parts, starting from fundamentals related to spin-dependent optoelectronics. Finally, we conclude with a brief summary and future prospects.

Spin-Selective Memtransistors with Magnetized Graphene

Spin-polarized bands in pristine and proximity-induced magnetic materials are promising building blocks for future devices. Conceptually new memory, logic, and neuromorphic devices are conceived based on atomically thin magnetic materials and the manipulation of their spin-polarized bands via electrical and optical methods. A critical remaining issue is the direct probe and the optimized use of the magnetic coupling effect in van der Waals heterostructures, which requires further delicate design of atomically thin magnetic materials and devices. Here, a spin-selective memtransistor with magnetized single-layered graphene on a reactive antiferromagnetic material, CrI3, is reported. The spin-dependent hybridization between graphene and CrI3 atomic layers enables the spin-selective bandgap opening in the single-layered graphene and the electric field control of magnetization in a specific CrI3 layer. The microscopic working principle is clarified by the first-principles calculations and theoretical analysis of the transport data. Reliable memtransistor operations (i.e., memory and logic device-combined operations), as well as a spin-selective probe of Landau levels in the magnetized graphene, are achieved by using the subtle manipulation of the magnetic proximity effect via electrical means.

Orbitronics: light-induced orbital currents in Ni studied by terahertz emission experiments

Orbitronics is based on the use of orbital currents as information carriers. Orbital currents can be generated from the conversion of charge or spin currents, and inversely, they could be converted back to charge or spin currents. Here we demonstrate that orbital currents can also be generated by femtosecond light pulses on Ni. In multilayers associating Ni with oxides and nonmagnetic metals such as Cu, we detect the orbital currents by their conversion into charge currents and the resulting terahertz emission. We show that the orbital currents extraordinarily predominate the light-induced spin currents in Ni-based systems, whereas only spin currents can be detected with CoFeB-based systems. In addition, the analysis of the time delays of the terahertz pulses leads to relevant information on the velocity and propagation length of orbital carriers. Our finding of light-induced orbital currents and our observation of their conversion into charge currents opens new avenues in orbitronics, including the development of orbitronic terahertz devices.

True amplification of spin waves in magnonic nano-waveguides

Magnonic nano-devices exploit magnons - quanta of spin waves - to transmit and process information within a single integrated platform that has the potential to outperform traditional semiconductor-based electronics. The main missing cornerstone of this information nanotechnology is an efficient scheme for the amplification of propagating spin waves. The recent discovery of spin-orbit torque provided an elegant mechanism for propagation losses compensation. While partial compensation of the spin-wave losses has been achieved, true amplification - the exponential increase in the spin-wave intensity during propagation - has so far remained elusive. Here we evidence the operating conditions to achieve unambiguous amplification using clocked nanoseconds-long spin-orbit torque pulses in magnonic nano-waveguides, where the effective magnetization has been engineered to be close to zero to suppress the detrimental magnon scattering. We achieve an exponential increase in the intensity of propagating spin waves up to 500% at a propagation distance of several micrometers.

Acoustic spin rotation in heavy-metal-ferromagnet bilayers

Through pumping a spin current from ferromagnet into heavy metal (HM) via magnetization precession, parts of the injected spins are in-plane rotated by the lattice vibration, namely acoustic spin rotation (ASR), which manifests itself as an inverse spin Hall voltage in HM with an additional 90° difference in angular dependency. When reversing the stacking order of bilayer with a counter-propagating spin current or using HMs with an opposite spin Hall angle, such ASR voltage shows the same sign, strongly suggesting that ASR changes the rotation direction due to interface spin-orbit interaction. With the drift-diffusion model of spin transport, we quantify the efficiency of ASR up to 30%. The finding of ASR endows the acoustic device with an ability to manipulate spin, and further reveals a new spin-orbit coupling between spin current and lattice vibration.

Room-Temperature Ferromagnetism in Epitaxial Bilayer FeSb/SrTiO3(001) Terminated with a Kagome Lattice

Two-dimensional (2D) magnets exhibit unique physical properties for potential applications in spintronics. To date, most 2D ferromagnets are obtained by mechanical exfoliation of bulk materials with van der Waals interlayer interactions, and the synthesis of single- or few-layer 2D ferromagnets with strong interlayer coupling remains experimentally challenging. Here, we report the epitaxial growth of 2D non-van der Waals ferromagnetic bilayer FeSb on SrTiO3(001) substrates stabilized by strong coupling to the substrate, which exhibits in-plane magnetic anisotropy and a Curie temperature above 390 K. In situ low-temperature scanning tunneling microscopy/spectroscopy and density-functional theory calculations further reveal that an Fe Kagome layer terminates the bilayer FeSb. Our results open a new avenue for further exploring emergent quantum phenomena from the interplay of ferromagnetism and topology for application in spintronics.

Quantifying the Magnetic Interactions Governing Chiral Spin Textures Using Deep Neural Networks

The interplay of magnetic interactions in chiral multilayer films gives rise to nanoscale topological spin textures that form attractive elements for next-generation computing. Quantifying these interactions requires several specialized, time-consuming, and resource-intensive experimental techniques. Imaging of ambient domain configurations presents a promising avenue for high-throughput extraction of parent magnetic interactions. Here, we present a machine learning (ML)-based approach to simultaneously determine the key magnetic interactions─symmetric exchange, chiral exchange, and anisotropy─governing the chiral domain phenomenology in multilayers, using a single binarized image of domain configurations. Our convolutional neural network model, trained and validated on over 10,000 domain images, achieved R2 > 0.85 in predicting the parameters and independently learned the physical interdependencies between magnetic parameters. When applied to microscopy data acquired across samples, our model-predicted parameter trends are consistent with those of independent experimental measurements. These results establish ML-driven techniques as valuable, high-throughput complements to conventional determination of magnetic interactions and serve to accelerate materials and device development for nanoscale electronics.

Auxetic piezoelectric effect in heterostructures

Inherent symmetry breaking at the interface has been fundamental to a myriad of physical effects and functionalities, such as efficient spin-charge interconversion, exotic magnetic structures and an emergent bulk photovoltaic effect. It has recently been demonstrated that interface asymmetry can induce sizable piezoelectric effects in heterostructures, even those consisting of centrosymmetric semiconductors, which provides flexibility to develop and optimize electromechanical coupling phenomena. Here, by targeted engineering of the interface symmetry, we achieve piezoelectric phenomena behaving as the electrical analogue of the negative Poisson's ratio. This effect, termed the auxetic piezoelectric effect, exhibits the same sign for the longitudinal (d33) and transverse (d31, d32) piezoelectric coefficients, enabling a simultaneous contraction or expansion in all directions under an external electrical stimulus. The signs of the transverse coefficients can be further tuned via in-plane symmetry anisotropy. The effects exist in a wide range of material systems and exhibit substantial coefficients, indicating potential implications for all-semiconductor actuator, sensor and filter applications.

Rashba Effect and Spin-Dependent Excitonic Properties in Chiral Two-Dimensional/Three-Dimensional Composite Perovskite Films

Among various chiral semiconductor materials, chiral two-dimensional (2D)/three-dimensional (3D) composite perovskites (CPs) offer the benefits of strong interface asymmetry and energy transfer between 2D and 3D phases, making the chiral CPs promising for spintronic devices. Therefore, understanding their spintronic properties will be greatly important for expanding their relevant applications. In this work, we synthesized one pair of chiral 2D/3D CP films. Their Rashba effect and spin relaxation process have been investigated by polarization-dependent femtosecond transient absorption spectroscopy. Interestingly, under left- and right-handed circularly polarized light (CPL) excitation, a two-photon emission intensity difference is observed in chiral 2D/3D CP films at 298 K. This work sheds light on the spin-dependent excitonic characteristics of chiral 2D/3D CPs and confirms the feasibility of their application in near-infrared CPL detection.

Manipulation of Spin-Orbit Torque in Tungsten Oxide/Manganite Heterostructure by Ionic Liquid Gating and Orbit Engineering

Spin-orbit coupling (SOC) is the interaction between electron's spin and orbital motion, which could realize a charge-to-spin current conversion and enable an innovative method to switch the magnetization by spin-orbit torque (SOT). Varied techniques have been developed to manipulate and improve the SOT, but the role of the orbit degree of freedom, which should have a crucial bearing on the SOC and SOT, is still confusing. Here, we find that the charge-to-spin current conversion and SOT in W3O8-δ/(La, Sr)MnO3 could be produced or eliminated by ionic liquid gating. Through tuning the preferential occupancy of Mn/W-d electrons from the in-plane (dx2-y2) to out-of-plane (d3z2-r2) orbit, the SOT damping-like field efficiency is nearly doubled due to the enhanced spin Hall effect and interfacial Rashba-Edelstein effect. These findings not only offer intriguing opportunities to control the SOT for high-efficient spintronic devices but also could be a fundamental step toward spin-orbitronics in the future.

Altermagnetic surface states: towards the observation and utilization of altermagnetism in thin films, interfaces and topological materials

The altermagnetism influences the electronic states allowing the presence of non-relativistic spin-splittings. Since altermagnetic spin-splitting is present along specific k-paths of the 3D Brillouin zone, we expect that the altermagnetic surface stateswill be present on specific surface orientations. We unveil the properties of the altermagnetic surface states considering three representative materials belonging to the orthorhombic, hexagonal and tetragonal space groups. We calculate the 2D projected Brillouin zone from the 3D Brillouin zone. We study the surfaces with their respective 2D Brillouin zones establishing where the spin-splittings with opposite sign merge annihilating the altermagnetic properties and on which surfaces the altermagnetism is preserved. Looking at the three principal surface orientations, we find that for several cases two surfaces are blind to the altermagnetism, while the altermagnetism survives for one surface orientation. Which surface preserves the altermagnetism depends also on themagnetic order. We qualitatively show that an electric field orthogonal to the blind surface can activate the altermagnetism. Our projection method was proven for strong altermagnetism, but it will be equivalently valid for recently discovered weak altermagnetism. Our results predict which surfaces to cleave in order to preserve altermagnetism in surfaces or interfaces and this paves the way to observe non-relativistic altermagnetic spin-splitting in thin films via spin-resolved ARPES and to interface the altermagnetism with other collective modes. We open future perspectives for the study of altermagnetic effects on the trivial and topological surface states.

Exploiting the Close-to-Dirac Point Shift of the Fermi Level in the Sb2Te3/Bi2Te3 Topological Insulator Heterostructure for Spin-Charge Conversion

Properly tuning the Fermi level position in topological insulators is of vital importance to tailor their spin-polarized electronic transport and to improve the efficiency of any functional device based on them. Here, we report the full in situ metal organic chemical vapor deposition (MOCVD) and study of a highly crystalline Bi2Te3/Sb2Te3 topological insulator heterostructure on top of large area (4″) Si(111) substrates. The bottom Sb2Te3 layer serves as an ideal seed layer for the growth of highly crystalline Bi2Te3 on top, also inducing a remarkable shift of the Fermi level to place it very close to the Dirac point, as visualized by angle-resolved photoemission spectroscopy. To exploit such ideal topologically protected surface states, we fabricate the simple spin-charge converter Si(111)/Sb2Te3/Bi2Te3/Au/Co/Au and probe the spin-charge conversion (SCC) by spin pumping ferromagnetic resonance. A large SCC is measured at room temperature and is interpreted within the inverse Edelstein effect, thus resulting in a conversion efficiency of λIEEE ∼ 0.44 nm. Our results demonstrate the successful tuning of the surface Fermi level of Bi2Te3 when grown on top of Sb2Te3 with a full in situ MOCVD process, which is highly interesting in view of its future technology transfer.

Deterministic Magnetization Reversal in Synthetic Antiferromagnets using Natural Light

Traditional current-driven spintronics is limited by localized heating issues and large energy consumption, restricting their data storage density and operation speed. Meanwhile, voltage-driven spintronics with much lower energy dissipation also suffers from charge-induced interfacial corrosion. Thereby finding a novel way of tuning ferromagnetism is crucial for spintronics with energy-saving and good reliability. Here, a visible light tuning of interfacial exchange interaction via photoelectron doping into synthetic antiferromagnetic heterostructure of CoFeB/Cu/CoFeB/PN Si substrate is demonstrated. Then, a complete, reversible magnetism switching between antiferromagnetic (AFM) and ferromagnetic (FM) states with visible light on and off is realized. Moreover, a visible light control of 180° deterministic magnetization switching with a tiny magnetic bias field is achieved. The magnetic optical Kerr effect results further reveal the magnetic domain switching pathway between AFM and FM domains. The first-principle calculations conclude that the photoelectrons fill in the unoccupied band and raise the Fermi energy, which increases the exchange interaction. Lastly, a prototype device with visible light control of two states switching with a 0.35% giant magnetoresistance ratio change (maximal 0.4%), paving the way toward fast, compact, and energy-efficient solar-driven memories is fabricated.

Controllable Spin-Orbit Torque Induced by Interfacial Ion Absorption in Ta/CoFeB/MgO Multilayers with Canted Magnetizations

Electrically generated spin-orbit torque (SOT) has emerged as a powerful pathway to control magnetization for spintronic applications including memory, logic, and neurocomputing. However, the requirement of external magnetic fields, together with the ultrahigh current density, is the main obstacle for practical SOT devices. In this paper, we report that the field-free SOT-driven magnetization switching can be successfully realized by interfacial ion absorption in perpendicular Ta/CoFeB/MgO multilayers. Besides, the tunable SOT efficiency exhibits a strong dependence on interfacial Ti insertion thicknesses. Polarized neutron reflection measurements demonstrate the existence of canted magnetization with Ti inserted, which leads to deterministic magnetization switching. In addition, interfacial characterization and first-principles calculations reveal that B absorption by the Ti layer is the main cause behind the enhanced interfacial transparency, which determines the tunable SOT efficiency. Our findings highlight an attractive scheme to a purely electric control spin configuration, enabling innovative designs for SOT-based spintronics via interfacial engineering.

Achiral dipoles on a ferromagnet can affect its magnetization direction

We demonstrate the possibility of a coupling between the magnetization direction of a ferromagnet and the tilting angle of adsorbed achiral molecules. To illustrate the mechanism of the coupling, we analyze a minimal Stoner model that includes Rashba spin-orbit coupling due to the electric field on the surface of the ferromagnet. The proposed mechanism allows us to study magnetic anisotropy of the system with an extended Stoner-Wohlfarth model and argue that adsorbed achiral molecules can change magnetocrystalline anisotropy of the substrate. Our research aims to motivate further experimental studies of the current-free chirality induced spin selectivity effect involving both enantiomers.

Survival of skyrmions along granular racetracks at room temperature

Skyrmions can be envisioned as bits of information that can be transported along nanoracetracks. However, temperature, defects, and/or granularity can produce diffusion, pinning, and, in general, modification in their dynamics. These effects may cause undesired errors in information transport. We present simulations of a realistic system where both the (room) temperature and sample granularity are taken into account. Key feasibility magnitudes, such as the success probability of a skyrmion traveling a given distance along the racetrack, are calculated. The results are evaluated in terms of the eventual loss of skyrmions by pinning, destruction at the edges, or excessive delay due to granularity. The model proposed is based on the Fokker-Planck equation resulting from Thiele's rigid model for skyrmions. The results could serve to establish error detection criteria and, in general, to discern the dynamics of skyrmions in realistic situations.

Chiral Inorganic Nanomaterials for Photo(electro)catalytic Conversion

Chiral inorganic nanomaterials due to their unique asymmetric nanostructures have gradually demonstrated intriguing chirality-dependent performance in photo(electro)catalytic conversion, such as water splitting. However, understanding the correlation between chiral inorganic characteristics and the photo(electro)catalytic process remains challenging. In this perspective, we first highlight the chirality source of inorganic nanomaterials and briefly introduce photo(electro)catalysis systems. Then, we delve into an in-depth discussion of chiral effects exerted by chiral nanostructures and their photo-electrochemistry properties, while emphasizing the emerging chiral inorganic nanomaterials for photo(electro)catalytic conversion. Finally, the challenges and opportunities of chiral inorganic nanomaterials for photo(electro)catalytic conversion are prospected. This perspective provides a comprehensive overview of chiral inorganic nanomaterials and their potential in photo(electro)catalytic conversion, which is beneficial for further research in this area.

Nonequilibrium Magneto-Conductance as a Manifestation of Spin Filtering in Chiral Nanojunctions

It is generally accepted that spin-dependent electron transmission may appear in chiral systems, even without magnetic components, as long as significant spin-orbit coupling is present in some of its elements. However, how this chirality-induced spin selectivity (CISS) manifests in experiments, where the system is taken out of equilibrium, is still debated. Aided by group theoretical considerations and nonequilibrium DFT-based quantum transport calculations, here we show that when spatial symmetries that forbid a finite spin polarization in equilibrium are broken, a net spin accumulation appears at finite bias in an arbitrary two-terminal nanojunction. Furthermore, when a suitably magnetized detector is introduced into the system, the net spin accumulation, in turn, translates into a finite magneto-conductance. The symmetry prerequisites are mostly analogous to those for the spin polarization at any bias with the vectorial nature given by the direction of magnetization, hence establishing an interconnection between these quantities.

Proximity-Induced Tunable Magnetic Order at the Interface of All-van der Waals-Layered Heterostructures

Spin-orbit coupling (SOC) plays a crucial role in controlling the spin-charge conversion efficiency, spin torque, and complex magnetic spin structures. In this study, we investigate the interplay between SOC and ferromagnetism in heterostructures of large-SOC and magnetic materials. We highlight the importance of the SOC-proximity effect on magnetic ordering in all-van der Waals-layered heterostructures, specifically Fe3GeTe2(FGT)/monolayer W1-xVxSe2 (x = 0 and 0.05). By increasing the SOC strength, we demonstrate various magnetic orderings induced at the interface of the heterostructure, including spin-flop, spin-flip, and inverted magnetization. Moreover, we show a sharp magnetic switching from antiferromagnetic state to ferromagnetic state in FGT/W0.95V0.05Se2, which is characteristic of the synthetic antiferromagnetic structure. This proof-of-concept result offers the possibility of interface-tailoring spintronics, including two-dimensional magnetoresistive random access memory toggle switching. Our findings provide insight into the design and development of next-generation spintronic devices by exploiting the interplay between SOC and magnetic ordering in all-van der Waals-layered heterostructures.

Room Temperature Spin-to-Charge Conversion in Amorphous Topological Insulating Gd-Alloyed BixSe1-x/CoFeB Bilayers

Disordered topological insulator (TI) films have gained intense interest by benefiting from both the TI's exotic transport properties and the advantage of mass production by sputtering. Here, we report on the clear evidence of spin-charge conversion (SCC) in amorphous Gd-alloyed BixSe1-x (BSG)/CoFeB bilayers fabricated by sputtering, which could be related to the amorphous TI surface states. Two methods have been employed to study SCC in BSG (tBSG = 6-16 nm)/CoFeB(5 nm) bilayers with different BSG thicknesses. First, spin pumping is used to generate a spin current in CoFeB and detect SCC by the inverse Edelstein effect (IEE). The maximum SCC efficiency (SCE) is measured to be as large as 0.035 nm (IEE length λIEE) in a 6 nm thick BSG sample, which shows a strong decay when tBSG increases due to the increase of BSG surface roughness. The second method is THz time-domain spectroscopy, which reveals a small tBSG dependence of SCE, validating the occurrence of a pure interface state-related SCC. Furthermore, our angle-resolved photoemission spectroscopy data show dispersive two-dimensional surface states that cross the bulk gap until the Fermi level, strengthening the possibility of SCC due to the amorphous TI states. Our studies provide a new experimental direction toward the search for topological systems in amorphous solids.

Large Interfacial Rashba Interaction Generating Strong Spin-Orbit Torques in Atomically Thin Metallic Heterostructures

The hallmark of spintronics has been the ability of spin-orbit interactions to convert a charge current into a spin current and vice versa, mainly in the bulk of heavy metal thin films. Here, we demonstrate how a light metal interface profoundly affects both the nature of spin-orbit torques and its efficiency in terms of damping-like (HDL) and field-like (HFL) effective fields in ultrathin Co films. We measure unexpectedly HFL/HDL ratios much larger than 1 by inserting a nanometer-thin Al metallic layer in Pt|Co|Al|Pt as compared to a similar stacking, including Cu as a reference. From our modeling, these results evidence the existence of large Rashba interaction at the Co|Al interface generating a giant HFL, which is not expected from a metallic interface. The occurrence of such enhanced torques from an interfacial origin is further validated by demonstrating current-induced magnetization reversal showing a significant decrease of the critical current for switching.

Understanding the Insight Mechanism of Chemical-Mechanical Degradation of Layered Co-Free Ni-Rich Cathode Materials: A Review

Layered Cobalt (Co)-free Nickel (Ni)-rich cathode materials have attracted much attention due to their high energy density and low cost. Still, their further development is hampered by material instability caused by the chemical/mechanical degradation of the material. Although there are numerous doping and modification approaches to improve the stability of layered cathode materials, these approaches are still in the laboratory stage and require further research before commercial application. To fully exploit the potential of layered cathode materials, a more comprehensive theoretical understanding of the underlying issues is necessary, along with active exploration of previously unrevealed mechanisms. This paper presents the phase transition mechanism of Co-free Ni-rich cathode materials, the existing problems, and the state-of-the-art characterization tools employed to study the phase transition. The causes of crystal structure degradation, interfacial instability, and mechanical degradation are elaborated, from the material's crystal structure to its phase transition and atomic orbital splitting. By organizing and summarizing these mechanisms, this paper aims to establish connections among common research problems and to identify future research priorities, thereby facilitating the rapid development of Co-free Ni-rich materials.

Dynamical Behavior of Pure Spin Current in Organic Materials

Growing concentration on the novel information processing technology and low-cost, flexible materials make the spintronics and organic materials appealing for the future interdisciplinary investigations. Organic spintronics, in this context, has arisen and witnessed great advances during the past two decades owing to the continuous innovative exploitation of the charge-contained spin polarized current. Albeit with such inspiring facts, charge-absent spin angular momentum flow, namely pure spin currents (PSCs) are less probed in organic functional solids. In this review, the past exploring journey of PSC phenomenon in organic materials are retrospected, including non-magnetic semiconductors and molecular magnets. Starting with the basic concepts and the generation mechanism for PSC, the representative experimental observations of PSC in the organic-based networks are subsequently demonstrated and summarized, by accompanying explicit discussion over the propagating mechanism of net spin itself in the organic media. Finally, future perspectives on PSC in organic materials are illustrated mainly from the material point of view, including single molecule magnets, complexes for the organic ligands framework as well as the lanthanide metal complexes, organic radicals, and the emerging 2D organic magnets.

Correlation of Interface Interdiffusion and Skyrmionic Phases

Magnetic skyrmions are prime candidates for the next generation of spintronic devices. Skyrmions and other topological magnetic structures are known to be stabilized by the Dzyaloshinskii-Moriya interaction (DMI) that occurs when the inversion symmetry is broken in thin films. Here, we show by first-principles calculations and atomistic spin dynamics simulations that metastable skyrmionic states can also be found in nominally symmetric multilayered systems. We demonstrate that this is correlated with the large enhancement of the DMI strength due to the presence of local defects. In particular, we find that metastable skyrmions can occur in Pd/Co/Pd multilayers without external magnetic fields and can be stable even near room temperature conditions. Our theoretical findings corroborate with magnetic force microscopy images and X-ray magnetic circular dichroism measurements and highlight the possibility of tuning the intensity of DMI by using interdiffusion at thin film interfaces.

Gate-Tunable Spin Hall Effect in an All-Light-Element Heterostructure: Graphene with Copper Oxide

Graphene is a light material for long-distance spin transport due to its low spin-orbit coupling, which at the same time is the main drawback for exhibiting a sizable spin Hall effect. Decoration by light atoms has been predicted to enhance the spin Hall angle in graphene while retaining a long spin diffusion length. Here, we combine a light metal oxide (oxidized Cu) with graphene to induce the spin Hall effect. Its efficiency, given by the product of the spin Hall angle and the spin diffusion length, can be tuned with the Fermi level position, exhibiting a maximum (1.8 ± 0.6 nm at 100 K) around the charge neutrality point. This all-light-element heterostructure shows a larger efficiency than conventional spin Hall materials. The gate-tunable spin Hall effect is observed up to room temperature. Our experimental demonstration provides an efficient spin-to-charge conversion system free from heavy metals and compatible with large-scale fabrication.

Heteroepitaxy of 2D CuCr2 Te4 with Robust Room-temperature Ferromagnetism

Magnetic materials in 2D have attracted widespread attention for their intriguing magnetic properties. 2D magnetic heterostructures can provide unprecedented opportunities for exploring fundamental physics and novel spintronic devices. Here, the heteroepitaxial growth of ferromagnetic CuCr₂ Te₄ nanosheets is reported on Cr₂ Te₃ and mica by chemical vapor deposition. Magneto-optical Kerr effect measurements reveal the thickness-dependent ferromagnetism of CuCr₂ Te₄ nanosheets on mica, where a decrease of Curie temperature (T_C ) from 320 to 260 K and an enhancement of perpendicular magnetic anisotropy with reducing thickness are observed. Moreover, lattice-matched heteroepitaxial ultrathin CuCr₂ Te₄ on Cr₂ Te₃ exhibits an enhanced robust ferromagnetism with T_C up to 340 K due to the interfacial charge transfer. Stripe-type magnetic domains and single magnetic domain are discovered in this heterostructure with different thicknesses. The work provides a way to construct robust room-temperature 2D magnetic heterostructures for functional spintronic devices.

Systematic Control of Ferrimagnetic Skyrmions via Composition Modulation in Pt/Fe1-xTbx/Ta Multilayers

Magnetic skyrmions are topological spin textures that can be used as memory and logic components for advancing the next generation spintronics. In this regard, control of nanoscale skyrmions, including their sizes and densities, is of particular importance for enhancing the storage capacity of skyrmionic devices. Here, we propose a viable route for engineering ferrimagnetic skyrmions via tuning the magnetic properties of the involved ferrimagnets Fe_1-xTb_x. Via tuning the composition of Fe_1-xTb_x that alters the magnetic anisotropy and the saturation magnetization, the size of the ferrimagnetic skyrmion (d_s) and the average density (η_s) can be effectively tailored in [Pt/Fe_1-xTb_x/Ta]₁₀ multilayers. In particular, a stabilization of sub-50 nm skyrmions with a high density is demonstrated at room temperature. Our work provides an effective approach for designing ferrimagnetic skyrmions with the desired size and density, which could be useful for enabling high-density ferrimagnetic skyrmionics.

Light-Induced Giant Rashba Spin-Orbit Coupling at Superconducting KTaO3 (110) Heterointerfaces

The 2D electron system (2DES) at the KTaO₃ surface or heterointerface with 5d orbitals hosts extraordinary physical properties, including a stronger Rashba spin-orbit coupling (RSOC), higher superconducting transition temperature, and potential of topological superconductivity. Herein, a huge enhancement of RSOC under light illumination achieved at a superconducting amorphous-Hf_0.5 Zr_0.5 O₂ /KTaO₃ (110) heterointerfaces is reported. The superconducting transition is observed with T_c = 0.62 K and the temperature-dependent upper critical field reveals the interaction between spin-orbit scattering and superconductivity. A strong RSOC with B_so = 1.9 T is revealed by weak antilocalization in the normal state, which undergoes sevenfold enhancement under light illumination. Furthermore, RSOC strength develops a dome-shaped dependence of carrier density with the maximum of B_so = 12.6 T achieved near the Lifshitz transition point n_c ≈ 4.1 × 10¹³ cm^-2 . The highly tunable giant RSOC at KTaO₃ (110)-based superconducting interfaces show great potential for spintronics.

Evidence of linear and cubic Rashba effect in non-magnetic heterostructure

TheLaAlO3/KTaO3system serves as a prototype to study the electronic properties that emerge as a result of spin-orbit coupling (SOC). In this article, we have used first-principles calculations to systematically study two types of defect-free (0 0 1) interfaces, which are termed as Type-I and Type-II. While the Type-I heterostructure produces a two dimensional (2D) electron gas, the Type-II heterostructure hosts an oxygen-rich 2D hole gas at the interface. Furthermore, in the presence of intrinsic SOC, we have found evidence of both cubic and linear Rashba interactions in the conduction bands of the Type-I heterostructure. On the contrary, there is spin-splitting of both the valence and the conduction bands in the Type-II interface, which are found to be only linear Rashba type. Interestingly, the Type-II interface also harbors a potential photocurrent transition path, making it an excellent platform to study the circularly polarized photogalvanic effect.

Atomic structure and large magnetic anisotropy in air-sensitive layered ferromagnetic VI3

We report the air-sensitivity, atomic structure, and magnetic anisotropy of VI₃ single crystals. We find that VI₃ nanocrystals exhibit a large M_R/M_S ratio of around 0.75 and a uniaxial anisotropic constant of an order of 10⁵ erg cc^-1 below the Curie temperature. Furthermore, density functional theory calculations reveal that both the monolayer and bulk VI₃ are ferromagnetic insulators, and the magnetic moment of the system arises mainly from the d orbital of the V atom. These findings open a feasible avenue to fabricating TEM specimens of air-sensitive layered materials, providing an in-depth comprehensive understanding of a layered ferromagnetic VI₃.