1
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Yang MH, Wang CH, Lai YH, Wang CH, Chen YJ, Chen JY, Chu YH, Wu WW. Antiferroelectric Heterostructures Memristors with Unique Resistive Switching Mechanisms and Properties. NANO LETTERS 2024. [PMID: 39158148 DOI: 10.1021/acs.nanolett.4c02705] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/20/2024]
Abstract
A novel antiferroelectric material, PbSnO3 (PSO), was introduced into a resistive random access memory (RRAM) to reveal its resistive switching (RS) properties. It exhibits outstanding electrical performance with a large memory window (>104), narrow switching voltage distribution (±2 V), and low power consumption. Using high-resolution transmission electron microscopy, we observed the antiferroelectric properties and remanent polarization of the PSO thin films. The in-plane shear strains in the monoclinic PSO layer are attributed to oxygen octahedral tilts, resulting in misfit dislocations and grain boundaries at the PSO/SRO interface. Furthermore, the incoherent grain boundaries between the orthorhombic and monoclinic phases are assumed to be the primary paths of Ag+ filaments. Therefore, the RS behavior is primarily dominated by antiferroelectric polarization and defect mechanisms for the PSO structures. The RS behavior of antiferroelectric heterostructures controlled by switching spontaneous polarization and strain, defects, and surface chemistry reactions can facilitate the development of new antiferroelectric device systems.
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Affiliation(s)
- Meng-Hsuan Yang
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, No. 1001, University Road, East District, Hsinchu City 30010, Taiwan
| | - Che-Hung Wang
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, No. 1001, University Road, East District, Hsinchu City 30010, Taiwan
| | - Yu-Hong Lai
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, No. 1001, University Road, East District, Hsinchu City 30010, Taiwan
| | - Chien-Hua Wang
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, No. 1001, University Road, East District, Hsinchu City 30010, Taiwan
| | - Yen-Jung Chen
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, No. 1001, University Road, East District, Hsinchu City 30010, Taiwan
| | - Jui-Yuan Chen
- Department of Materials Science and Engineering, National United University, No.1, Lienda, Miaoli City 360301, Taiwan
| | - Ying-Hao Chu
- Department of Materials Science and Engineering, National Tsing Hua University, No. 101, Sec. 2, Guangfu Rd., East District, Hsinchu City 300044, Taiwan
| | - Wen-Wei Wu
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, No. 1001, University Road, East District, Hsinchu City 30010, Taiwan
- Future Semiconductor Technology Research Center, National Yang Ming Chiao Tung University, No. 1001, University Road, East District, Hsinchu City 30010, Taiwan
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2
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Zhuo F, Zhou X, Dietrich F, Soleimany M, Breckner P, Groszewicz PB, Xu B, Buntkowsky G, Rödel J. Dislocation Density-Mediated Functionality in Single-Crystal BaTiO 3. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2403550. [PMID: 38885353 PMCID: PMC11336959 DOI: 10.1002/advs.202403550] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/19/2024] [Revised: 05/12/2024] [Indexed: 06/20/2024]
Abstract
Unlike metals where dislocations carry strain singularity but no charge, dislocations in oxide ceramics are characterized by both a strain field and a local charge with a compensating charge envelope. Oxide ceramics with their deliberate engineering and manipulation are pivotal in numerous modern technologies such as semiconductors, superconductors, solar cells, and ferroics. Dislocations facilitate plastic deformation in metals and lead to a monotonous increase in the strength of metallic materials in accordance with the widely recognized Taylor hardening law. However, achieving the objective of tailoring the functionality of oxide ceramics by dislocation density still remains elusive. Here a strategy to imprint dislocations with {100}<100> slip systems and a tenfold change in dislocation density of BaTiO3 single crystals using high-temperature uniaxial compression are reported. Through a dislocation density-based approach, dielectric permittivity, converse piezoelectric coefficient, and alternating current conductivity are tailored, exhibiting a peak at medium dislocation density. Combined with phase-field simulations and domain wall potential energy analyses, the dislocation-density-based design in bulk ferroelectrics is mechanistically rationalized. These findings may provide a new dimension for employing plastic strain engineering to tune the electrical properties of ferroics, potentially paving the way for advancing dislocation technology in functional ceramics.
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Affiliation(s)
- Fangping Zhuo
- Department of Materials and Earth SciencesTechnical University of Darmstadt64287DarmstadtGermany
| | - Xiandong Zhou
- Failure Mechanics and Engineering Disaster Prevention Key Laboratory of Sichuan ProvinceCollege of Architecture and EnvironmentMOE Key Laboratory of Deep Earth Science and EngineeringCollege of Architecture and EnvironmentSichuan UniversityChengdu610065China
| | - Felix Dietrich
- Institute of Physical ChemistryTechnical University of Darmstadt64287DarmstadtGermany
| | - Mehrzad Soleimany
- Department of Materials and Earth SciencesTechnical University of Darmstadt64287DarmstadtGermany
| | - Patrick Breckner
- Department of Materials and Earth SciencesTechnical University of Darmstadt64287DarmstadtGermany
| | - Pedro B. Groszewicz
- Department of Radiation Science and TechnologyDelft University of TechnologyDelft2629JBNetherlands
| | - Bai‐Xiang Xu
- Department of Materials and Earth SciencesTechnical University of Darmstadt64287DarmstadtGermany
| | - Gerd Buntkowsky
- Institute of Physical ChemistryTechnical University of Darmstadt64287DarmstadtGermany
| | - Jürgen Rödel
- Department of Materials and Earth SciencesTechnical University of Darmstadt64287DarmstadtGermany
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3
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Chan HL, Fields SS, Chen Y, O’Neill TP, Lenox MK, Hubbard WA, Ihlefeld JF, Regan BC. Mapping Ferroelectric Fields Reveals the Origins of the Coercivity Distribution. ACS NANO 2024; 18:20380-20388. [PMID: 39017620 PMCID: PMC11308779 DOI: 10.1021/acsnano.4c04526] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/05/2024] [Revised: 06/28/2024] [Accepted: 07/01/2024] [Indexed: 07/18/2024]
Abstract
Better techniques for imaging ferroelectric polarization would aid the development of new ferroelectrics and the refinement of old ones. Here we show how scanning transmission electron microscope (STEM) electron beam-induced current (EBIC) imaging reveals ferroelectric polarization with obvious, simply interpretable contrast. Planar imaging of an entire ferroelectric hafnium zirconium oxide (Hf0.5Zr0.5O2, HZO) capacitor shows an EBIC response that is linearly related to the polarization determined in situ with the positive-up, negative-down (PUND) method. The contrast is easily calibrated in MV/cm. The underlying mechanism is magnification-independent, operating equally well on micrometer-sized devices and individual nanoscale domains. Coercive-field mapping reveals that individual domains are biased "positive" and "negative", as opposed to being "easy" and "hard" to switch. The remanent background E-fields generating this bias can be isolated and mapped. Coupled with STEM's native capabilities for structural identification, STEM EBIC imaging provides a revolutionary tool for characterizing ferroelectric materials and devices.
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Affiliation(s)
- Ho Leung Chan
- Department
of Physics and Astronomy, University of
California, Los Angeles, California 90095, United States
- California
NanoSystems Institute, University of California, Los Angeles, California 90095, United States
| | - Shelby S. Fields
- Department
of Materials Science and Engineering, University
of Virginia, Charlottesville, Virginia 22904, United States
| | - Yueyun Chen
- Department
of Physics and Astronomy, University of
California, Los Angeles, California 90095, United States
- California
NanoSystems Institute, University of California, Los Angeles, California 90095, United States
| | - Tristan P. O’Neill
- Department
of Physics and Astronomy, University of
California, Los Angeles, California 90095, United States
- California
NanoSystems Institute, University of California, Los Angeles, California 90095, United States
| | - Megan K. Lenox
- Department
of Materials Science and Engineering, University
of Virginia, Charlottesville, Virginia 22904, United States
| | - William A. Hubbard
- NanoElectronic
Imaging, Inc., Los Angeles, California 90095, United States
| | - Jon F. Ihlefeld
- Department
of Materials Science and Engineering, University
of Virginia, Charlottesville, Virginia 22904, United States
- Charles
L. Brown Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| | - Brian C. Regan
- Department
of Physics and Astronomy, University of
California, Los Angeles, California 90095, United States
- California
NanoSystems Institute, University of California, Los Angeles, California 90095, United States
- NanoElectronic
Imaging, Inc., Los Angeles, California 90095, United States
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4
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Li X, Wang Z, Bao Y, Lu H, You J, Wang L. Oxygen Vacancy: How Will Poling History Affect Its Role in Photoelectrocatalysis. CHEMSUSCHEM 2024:e202400946. [PMID: 38899379 DOI: 10.1002/cssc.202400946] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/02/2024] [Revised: 06/14/2024] [Accepted: 06/18/2024] [Indexed: 06/21/2024]
Abstract
Oxygen vacancy (VO) has been recognized to possess an effect to promote the charge separation and transfer (CST) in various n-type semiconductor based photoelectrodes. But how external stimulus will change this VO effect has not been investigated. In this work, external polarization is applied to investigate the effect of VO on the CST process of a typical ferroelectric BiFeO3 photoelectrode. It is found that negative poling treatment can significantly boost VO effect, while positive poling treatment will deteriorate the CST capability in BiFeO3 photoelectrodes. This poling history determined VO effect is rooted in the VO induced defect dipoles, wherein their alignment produces a depolarization electric field to modulate the CST driving force. This finding highlights the significance of poling history in functionalizing the VO in a photoelectrode.
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Affiliation(s)
- Xianlong Li
- Nanomaterials Centre, School of Chemical Engineering, Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, St Lucia, 4072, Queensland, Australia
| | - Zhiliang Wang
- Nanomaterials Centre, School of Chemical Engineering, Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, St Lucia, 4072, Queensland, Australia
| | - Yifan Bao
- Nanomaterials Centre, School of Chemical Engineering, Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, St Lucia, 4072, Queensland, Australia
| | - Haijiao Lu
- Nanomaterials Centre, School of Chemical Engineering, Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, St Lucia, 4072, Queensland, Australia
| | - Jiakang You
- Nanomaterials Centre, School of Chemical Engineering, Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, St Lucia, 4072, Queensland, Australia
| | - Lianzhou Wang
- Nanomaterials Centre, School of Chemical Engineering, Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, St Lucia, 4072, Queensland, Australia
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5
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Wu Y, Yang H, He Q, Jiang H, Chen W, Tan C, Zhang Y, Zheng Y. The Investigation of Neuromimetic Dynamics in Ferroelectrics via In Situ TEM. NANO LETTERS 2024. [PMID: 38825790 DOI: 10.1021/acs.nanolett.4c01626] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2024]
Abstract
The core task of neuromorphic devices is to effectively simulate the behavior of neurons and synapses. Based on the functionality of ferroelectric domains with the advantages of low power consumption and high-speed response, great progress has been made in realizing neuromimetic behaviors such as ferroelectric synaptic devices. However, the correlation between the ferroelectric domain dynamics and neuromimetic behavior remains unclear. Here, we reveal the correlation between domain/domain wall dynamics and neuromimetic behaviors from a microscopic perspective in real-time by using high temporal and spatial resolution in situ transmission electron microscopy. Furthermore, we propose utilizing ferroelectric microstructures for the simultaneous simulation of neuronal and synaptic plasticity, which is expected to improve the integration and performance of ferroelectric neuromorphic devices. We believe that this work to study neuromimetic behavior from the perspective of domain dynamics is instructive for the development of ferroelectric neuromorphic devices.
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Affiliation(s)
- Yiwei Wu
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
| | - Hui Yang
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
| | - Qian He
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
| | - He Jiang
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
| | - Weijin Chen
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
| | - Congbing Tan
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- Hunan Provincial Key Laboratory of Intelligent Sensors and Sensor Materials, School of Physics and Electronics, Hunan University of Science and Technology, Xiangtan 411201, People's Republic of China
| | - Yi Zhang
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
| | - Yue Zheng
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
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6
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Xu Y, Liu N, Lin Y, Mao X, Zhong H, Chang Z, Shneider MN, Ju Y. Enhancements of electric field and afterglow of non-equilibrium plasma by Pb(Zr xTi 1-x)O 3 ferroelectric electrode. Nat Commun 2024; 15:3092. [PMID: 38600079 PMCID: PMC11006859 DOI: 10.1038/s41467-024-47230-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/06/2023] [Accepted: 03/26/2024] [Indexed: 04/12/2024] Open
Abstract
Manipulating surface charge, electric field, and plasma afterglow in a non-equilibrium plasma is critical to control plasma-surface interaction for plasma catalysis and manufacturing. Here, we show enhancements of surface charge, electric field during breakdown, and afterglow by ferroelectric barrier discharge. The results show that the ferroelectrics manifest spontaneous electric polarization to increase the surface charge by two orders of magnitude compared to discharge with an alumina barrier. Time-resolved in-situ electric field measurements reveal that the fast polarization of ferroelectrics enhances the electric field during the breakdown in streamer discharge and doubles the electric field compared to the dielectric barrier discharge. Moreover, due to the existence of surface charge, the ferroelectric electrode extends the afterglow time and makes discharge sustained longer when alternating the external electric field polarity. The present results show that ferroelectric barrier discharge offers a promising technique to tune plasma properties for efficient plasma catalysis and electrified manufacturing.
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Affiliation(s)
- Yijie Xu
- Department of Mechanical and Aerospace Engineering, Princeton University, Princeton, NJ, 08540, USA
| | - Ning Liu
- Department of Mechanical and Aerospace Engineering, Princeton University, Princeton, NJ, 08540, USA.
| | - Ying Lin
- Department of Mechanical and Aerospace Engineering, Princeton University, Princeton, NJ, 08540, USA
| | - Xingqian Mao
- Department of Mechanical and Aerospace Engineering, Princeton University, Princeton, NJ, 08540, USA
| | - Hongtao Zhong
- Department of Mechanical and Aerospace Engineering, Princeton University, Princeton, NJ, 08540, USA
- Department of Mechanical Engineering, Stanford University, Stanford, CA, 94305, USA
| | - Ziqiao Chang
- Department of Mechanical and Aerospace Engineering, Princeton University, Princeton, NJ, 08540, USA
| | - Mikhail N Shneider
- Department of Mechanical and Aerospace Engineering, Princeton University, Princeton, NJ, 08540, USA
| | - Yiguang Ju
- Department of Mechanical and Aerospace Engineering, Princeton University, Princeton, NJ, 08540, USA
- Princeton Plasma Physics Laboratory, Princeton, NJ, 08540, USA
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7
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Guido R, Lu H, Lomenzo PD, Mikolajick T, Gruverman A, Schroeder U. Kinetics of N- to M-Polar Switching in Ferroelectric Al 1-xSc xN Capacitors. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2308797. [PMID: 38355302 DOI: 10.1002/advs.202308797] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/30/2023] [Indexed: 02/16/2024]
Abstract
Ferroelectric wurtzite-type aluminum scandium nitride (Al1-xScxN) presents unique properties that can enhance the performance of non-volatile memory technologies. The realization of the full potential of Al1-xScxN requires a comprehensive understanding of the mechanism of polarization reversal and domain structure dynamics involved in the ferroelectric switching process. In this work, transient current integration measurements performed by a pulse switching method are combined with domain imaging by piezoresponse force microscopy (PFM) to investigate the kinetics of domain nucleation and wall motion during polarization reversal in Al0.85Sc0.15N capacitors. In the studied electric field range (from 4.4 to 5.6 MV cm-1), ferroelectric switching proceeds via domain nucleation and wall movement. The currently available phenomenological models are shown to not fully capture all the details of the complex dynamics of polarization reversal in Al0.85Sc0.15N. PFM reveals a non-linear increase of both domain nucleation rate and lateral wall velocity during the switching process, as well as the dependency of the domain pattern on the polarization reversal direction. A continuously faster N- to M-polar switching upon cycling is reported and ascribed to an increasing number of M-polar nucleation sites and density of domain walls.
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Affiliation(s)
- Roberto Guido
- NaMLab gGmbH, Noethnizer Strasse 64a, 01187, Dresden, Germany
- Chair of Nanoelectronics, Technische Universität Dresden, Noethnizer Strasse 64, 01187, Dresden, Germany
| | - Haidong Lu
- Department of Physics and Astronomy, University of Nebraska, Lincoln, NE, 68588, USA
| | | | - Thomas Mikolajick
- NaMLab gGmbH, Noethnizer Strasse 64a, 01187, Dresden, Germany
- Chair of Nanoelectronics, Technische Universität Dresden, Noethnizer Strasse 64, 01187, Dresden, Germany
| | - Alexei Gruverman
- Department of Physics and Astronomy, University of Nebraska, Lincoln, NE, 68588, USA
| | - Uwe Schroeder
- NaMLab gGmbH, Noethnizer Strasse 64a, 01187, Dresden, Germany
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8
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Yan Q, Kar S, Chowdhury S, Bansil A. The Case for a Defect Genome Initiative. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2303098. [PMID: 38195961 DOI: 10.1002/adma.202303098] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/03/2023] [Revised: 08/12/2023] [Indexed: 01/11/2024]
Abstract
The Materials Genome Initiative (MGI) has streamlined the materials discovery effort by leveraging generic traits of materials, with focus largely on perfect solids. Defects such as impurities and perturbations, however, drive many attractive functional properties of materials. The rich tapestry of charge, spin, and bonding states hosted by defects are not accessible to elements and perfect crystals, and defects can thus be viewed as another class of "elements" that lie beyond the periodic table. Accordingly, a Defect Genome Initiative (DGI) to accelerate functional defect discovery for energy, quantum information, and other applications is proposed. First, major advances made under the MGI are highlighted, followed by a delineation of pathways for accelerating the discovery and design of functional defects under the DGI. Near-term goals for the DGI are suggested. The construction of open defect platforms and design of data-driven functional defects, along with approaches for fabrication and characterization of defects, are discussed. The associated challenges and opportunities are considered and recent advances towards controlled introduction of functional defects at the atomic scale are reviewed. It is hoped this perspective will spur a community-wide interest in undertaking a DGI effort in recognition of the importance of defects in enabling unique functionalities in materials.
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Affiliation(s)
- Qimin Yan
- Department of Physics, Northeastern University, Boston, MA 02115, USA
| | - Swastik Kar
- Department of Physics, Northeastern University, Boston, MA 02115, USA
- Department of Chemical Engineering, Northeastern University, Boston, MA 02115, USA
| | - Sugata Chowdhury
- Department of Physics and Astrophysics, Howard University, Washington, DC 20059, USA
| | - Arun Bansil
- Department of Physics, Northeastern University, Boston, MA 02115, USA
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9
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Song L, Zhao Y, Du R, Li H, Li X, Feng W, Yang J, Wen X, Huang L, Peng Y, Sun H, Jiang Y, He J, Shi J. Coexistence of Ferroelectricity and Ferromagnetism in Atomically Thin Two-Dimensional Cr 2S 3/WS 2 Vertical Heterostructures. NANO LETTERS 2024; 24:2408-2414. [PMID: 38329291 DOI: 10.1021/acs.nanolett.3c05105] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/09/2024]
Abstract
Two-dimensional (2D) heterostructures with ferromagnetism and ferroelectricity provide a promising avenue to miniaturize the device size, increase computational power, and reduce energy consumption. However, the direct synthesis of such eye-catching heterostructures has yet to be realized up to now. Here, we design a two-step chemical vapor deposition strategy to growth of Cr2S3/WS2 vertical heterostructures with atomically sharp and clean interfaces on sapphire. The interlayer charge transfer and periodic moiré superlattice result in the emergence of room-temperature ferroelectricity in atomically thin Cr2S3/WS2 vertical heterostructures. In parallel, long-range ferromagnetic order is discovered in 2D Cr2S3 via the magneto-optical Kerr effect technique with the Curie temperature approaching 170 K. The charge distribution variation induced by the moiré superlattice changes the ferromagnetic coupling strength and enhances the Curie temperature. The coexistence of ferroelectricity and ferromagnetism in 2D Cr2S3/WS2 vertical heterostructures provides a cornerstone for the further design of logic-in-memory devices to build new computing architectures.
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Affiliation(s)
- Luying Song
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Ying Zhao
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), Dalian University of Technology, Dalian 116024, People's Republic of China
| | - Ruofan Du
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Hui Li
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Xiaohui Li
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Wang Feng
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Junbo Yang
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Xia Wen
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Ling Huang
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Yanan Peng
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Hang Sun
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Yulin Jiang
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Jianping Shi
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
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10
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Chen CH, Lai YT, Chen CF, Wu PT, Su KJ, Hsu SY, Dai GJ, Huang ZY, Hsu CL, Lee SY, Shen CH, Chen HY, Lee CC, Hsieh DR, Lin YF, Chao TS, Lo ST. Single-Gate In-Transistor Readout of Current Superposition and Collapse Utilizing Quantum Tunneling and Ferroelectric Switching. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2301206. [PMID: 37282350 DOI: 10.1002/adma.202301206] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/07/2023] [Revised: 06/01/2023] [Indexed: 06/08/2023]
Abstract
In nanostructure assemblies, the superposition of current paths forms microscopic electric circuits, and different circuit networks produce varying results, particularly when utilized as transistor channels for computing applications. However, the intricate nature of assembly networks and the winding paths of commensurate currents hinder standard circuit modeling. Inspired by the quantum collapse of superposition states for information decoding in quantum circuits, the implementation of analogous current path collapse to facilitate the detection of microscopic circuits by modifying their network topology is explored. Here, the superposition and collapse of current paths in gate-all-around polysilicon nanosheet arrays are demonstrated to enrich the computational resources within transistors by engineering the channel length and quantity. Switching the ferroelectric polarization of Hf0.5 Zr0.5 O2 gate dielectric, which drives these transistors out-of-equilibrium, decodes the output polymorphism through circuit topological modifications. Furthermore, a protocol for the single-electron readout of ferroelectric polarization is presented with tailoring the channel coherence. The introduction of lateral path superposition results into intriguing metal-to-insulator transitions due to transient behavior of ferroelectric switching. This ability to adjust the current networks within transistors and their interaction with ferroelectric polarization in polycrystalline nanostructures lays the groundwork for generating diverse current characteristics as potential physical databases for optimization-based computing.
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Affiliation(s)
- Ching-Hung Chen
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Yu-Ting Lai
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Ciao-Fen Chen
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
- Department of Physics, National Chung Hsing University, Taichung, 40227, Taiwan
| | - Pei-Tzu Wu
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Kuan-Jung Su
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Sheng-Yang Hsu
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Guo-Jin Dai
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Zan-Yi Huang
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Chien-Lung Hsu
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Shen-Yang Lee
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Chuan-Hui Shen
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Hsin-Yu Chen
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Chia-Chin Lee
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Dong-Ru Hsieh
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Yen-Fu Lin
- Department of Physics, National Chung Hsing University, Taichung, 40227, Taiwan
| | - Tien-Sheng Chao
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Shun-Tsung Lo
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
- Center for Emergent Functional Matter Science, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
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11
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Zhuo F, Zhou X, Gao S, Dietrich F, Groszewicz PB, Fulanović L, Breckner P, Xu BX, Kleebe HJ, Damjanovic D, Rödel J. Intrinsic-Strain Engineering by Dislocation Imprint in Bulk Ferroelectrics. PHYSICAL REVIEW LETTERS 2023; 131:016801. [PMID: 37478420 DOI: 10.1103/physrevlett.131.016801] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/21/2022] [Revised: 03/02/2023] [Accepted: 06/02/2023] [Indexed: 07/23/2023]
Abstract
We report an intrinsic strain engineering, akin to thin filmlike approaches, via irreversible high-temperature plastic deformation of a tetragonal ferroelectric single-crystal BaTiO_{3}. Dislocations well-aligned along the [001] axis and associated strain fields in plane defined by the [110]/[1[over ¯]10] plane are introduced into the volume, thus nucleating only in-plane domain variants. By combining direct experimental observations and theoretical analyses, we reveal that domain instability and extrinsic degradation processes can both be mitigated during the aging and fatigue processes, and demonstrate that this requires careful strain tuning of the ratio of in-plane and out-of-plane domain variants. Our findings advance the understanding of structural defects that drive domain nucleation and instabilities in ferroic materials and are essential for mitigating device degradation.
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Affiliation(s)
- Fangping Zhuo
- Department of Materials and Earth Sciences, Technical University of Darmstadt, 64287 Darmstadt, Germany
| | - Xiandong Zhou
- Failure Mechanics and Engineering Disaster Prevention Key Laboratory of Sichuan Province, College of Architecture and Environment, Sichuan University, Chengdu 610207, China
- MOE Key Laboratory of Deep Earth Science and Engineering, College of Architecture and Environment, Sichuan University, Chengdu 610065, China
| | - Shuang Gao
- Department of Materials and Earth Sciences, Technical University of Darmstadt, 64287 Darmstadt, Germany
| | - Felix Dietrich
- Institute of Physical Chemistry, Technical University of Darmstadt, 64287 Darmstadt, Germany
| | - Pedro B Groszewicz
- Department of Radiation Science and Technology, Delft University of Technology, Delft 2629JB, Netherlands
| | - Lovro Fulanović
- Department of Materials and Earth Sciences, Technical University of Darmstadt, 64287 Darmstadt, Germany
| | - Patrick Breckner
- Department of Materials and Earth Sciences, Technical University of Darmstadt, 64287 Darmstadt, Germany
| | - Bai-Xiang Xu
- Department of Materials and Earth Sciences, Technical University of Darmstadt, 64287 Darmstadt, Germany
| | - Hans-Joachim Kleebe
- Department of Materials and Earth Sciences, Technical University of Darmstadt, 64287 Darmstadt, Germany
| | - Dragan Damjanovic
- Department of Materials and Earth Sciences, Technical University of Darmstadt, 64287 Darmstadt, Germany
- Institute of Materials, École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
| | - Jürgen Rödel
- Department of Materials and Earth Sciences, Technical University of Darmstadt, 64287 Darmstadt, Germany
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12
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Jiang RJ, Cao Y, Geng WR, Zhu MX, Tang YL, Zhu YL, Wang Y, Gong F, Liu SZ, Chen YT, Liu J, Liu N, Wang JH, Lv XD, Chen SJ, Ma XL. Atomic Insight into the Successive Antiferroelectric-Ferroelectric Phase Transition in Antiferroelectric Oxides. NANO LETTERS 2023; 23:1522-1529. [PMID: 36722976 DOI: 10.1021/acs.nanolett.2c04972] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Antiferroelectrics characterized by voltage-driven reversible transitions between antiparallel and parallel polarity are promising for cutting-edge electronic and electrical power applications. Wide-ranging explorations revealing the macroscopic performances and microstructural characteristics of typical antiferroelectric systems have been conducted. However, the underlying mechanism has not yet been fully unraveled, which depends largely on the atomistic processes. Herein, based on atomic-resolution transmission electron microscopy, the deterministic phase transition pathway along with the underlying lattice-by-lattice details in lead zirconate thin films was elucidated. Specifically, we identified a new type of ferrielectric-like dipole configuration with both angular and amplitude modulations, which plays the role of a precursor for a subsequent antiferroelectric to ferroelectric transformation. With the participation of the ferrielectric-like phase, the phase transition pathways driven by the phase boundary have been revealed. We provide new insights into the consecutive phase transformation in low-dimensional lead zirconate, which thus would promote potential antiferroelectric-based multifunctional devices.
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Affiliation(s)
- Ru-Jian Jiang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang110016, People's Republic of China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang110016, People's Republic of China
| | - Yi Cao
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang110016, People's Republic of China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang110016, People's Republic of China
| | - Wan-Rong Geng
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong523808, People's Republic of China
- Institute of Physics, Chinese Academy of Sciences, Beijing100190, People's Republic of China
| | - Mei-Xiong Zhu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang110016, People's Republic of China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang110016, People's Republic of China
| | - Yun-Long Tang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang110016, People's Republic of China
| | - Yin-Lian Zhu
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong523808, People's Republic of China
| | - Yujia Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang110016, People's Republic of China
| | - Fenghui Gong
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang110016, People's Republic of China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang110016, People's Republic of China
| | - Su-Zhen Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang110016, People's Republic of China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang110016, People's Republic of China
| | - Yu-Ting Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang110016, People's Republic of China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang110016, People's Republic of China
| | - Jiaqi Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang110016, People's Republic of China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang110016, People's Republic of China
| | - Nan Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang110016, People's Republic of China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang110016, People's Republic of China
| | - Jing-Hui Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang110016, People's Republic of China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang110016, People's Republic of China
| | - Xiao-Dong Lv
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang110016, People's Republic of China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang110016, People's Republic of China
| | - Shuang-Jie Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang110016, People's Republic of China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang110016, People's Republic of China
| | - Xiu-Liang Ma
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong523808, People's Republic of China
- Institute of Physics, Chinese Academy of Sciences, Beijing100190, People's Republic of China
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13
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Condurache O, Dražić G, Rojac T, Uršič H, Dkhil B, Bradeško A, Damjanovic D, Benčan A. Atomic-Level Response of the Domain Walls in Bismuth Ferrite in a Subcoercive-Field Regime. NANO LETTERS 2023; 23:750-756. [PMID: 36458590 PMCID: PMC9881151 DOI: 10.1021/acs.nanolett.2c02857] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/20/2022] [Revised: 11/18/2022] [Indexed: 06/17/2023]
Abstract
The atomic-level response of zigzag ferroelectric domain walls (DWs) was investigated with in situ bias scanning transmission electron microscopy (STEM) in a subcoercive-field regime. Atomic-level movement of a single DW was observed. Unexpectedly, the change in the position of the DW, determined from the atomic displacement, did not follow the position of the strain field when the electric field was applied. This can be explained as low mobility defect segregation at the initial DW position, such as ordered clusters of oxygen vacancies. Further, the triangular apex of the zigzag wall is pinned, but it changes its shape and becomes asymmetric under electrical stimuli. This phenomenon is accompanied by strain and bound charge redistribution. We report on unique atomic-scale phenomena at the DW level and show that in situ STEM studies with atomic resolution are very relevant as they complement, and sometimes challenge, the knowledge gained from lower resolution studies.
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Affiliation(s)
- Oana Condurache
- Electronic
Ceramics Department, Jožef Stefan
Institute, 1000 Ljubljana, Slovenia
- Jožef
Stefan International Postgraduate School, 1000 Ljubljana, Slovenia
| | - Goran Dražić
- Electronic
Ceramics Department, Jožef Stefan
Institute, 1000 Ljubljana, Slovenia
- Jožef
Stefan International Postgraduate School, 1000 Ljubljana, Slovenia
- National
Institute of Chemistry, 1001 Ljubljana, Slovenia
| | - Tadej Rojac
- Electronic
Ceramics Department, Jožef Stefan
Institute, 1000 Ljubljana, Slovenia
- Jožef
Stefan International Postgraduate School, 1000 Ljubljana, Slovenia
| | - Hana Uršič
- Electronic
Ceramics Department, Jožef Stefan
Institute, 1000 Ljubljana, Slovenia
- Jožef
Stefan International Postgraduate School, 1000 Ljubljana, Slovenia
| | - Brahim Dkhil
- CentraleSupélec,
Laboratoire Structures, Propriétés et Modélisation
des Solides, Université Paris-Saclay, 91190 Gif-sur-Yvette, France
| | - Andraž Bradeško
- CentraleSupélec,
Laboratoire Structures, Propriétés et Modélisation
des Solides, Université Paris-Saclay, 91190 Gif-sur-Yvette, France
| | - Dragan Damjanovic
- Institute
of Materials, Swiss Federal Institute of
Technology−EPFL, 1015 Lausanne, Switzerland
| | - Andreja Benčan
- Electronic
Ceramics Department, Jožef Stefan
Institute, 1000 Ljubljana, Slovenia
- Jožef
Stefan International Postgraduate School, 1000 Ljubljana, Slovenia
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14
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Waqar M, He Q, Chai J, Lim PC, Yao K, Wang J. Diverse Defects in Alkali Niobate Thin Films: Understanding at Atomic Scales and Their Implications on Properties. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2205137. [PMID: 36433826 DOI: 10.1002/smll.202205137] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/22/2022] [Revised: 10/30/2022] [Indexed: 06/16/2023]
Abstract
Defects in ferroelectric materials have many implications on the material properties which, in most cases, are detrimental. However, engineering these defects can also create opportunities for property enhancement as well as for tailoring novel functionalities. To purposely manipulate these defects, a thorough knowledge of their spatial atomic arrangement, as well as elastic and electrostatic interactions with the surrounding lattice, is highly crucial. In this work, analytical scanning transmission electron microscopy (STEM) is used to reveal a diverse range of multidimensional crystalline defects (point, line, planar, and secondary phase) in (K,Na)NbO3 (KNN) ferroelectric thin films. The atomic-scale analyses of the defect-lattice interactions suggest strong elastic and electrostatic couplings which vary among the individual defects and correspondingly affect the electric polarization. In particular, the observed polarization orientations are correlated with lattice relaxations as well as strain gradients and can strongly impact the properties of the ferroelectric films. The knowledge and understanding obtained in this study open a new avenue for the improvement of properties as well as the discovery of defect-based functionalities in alkali niobate thin films.
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Affiliation(s)
- Moaz Waqar
- Institute of Materials Research and Engineering (IMRE), A*STAR (Agency for Science, Technology and Research), Singapore, 138634, Singapore
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117574, Singapore
- Integrative Sciences and Engineering Programme, National University of Singapore, Singapore, 119077, Singapore
| | - Qian He
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117574, Singapore
| | - Jianwei Chai
- Institute of Materials Research and Engineering (IMRE), A*STAR (Agency for Science, Technology and Research), Singapore, 138634, Singapore
| | - Poh Chong Lim
- Institute of Materials Research and Engineering (IMRE), A*STAR (Agency for Science, Technology and Research), Singapore, 138634, Singapore
| | - Kui Yao
- Institute of Materials Research and Engineering (IMRE), A*STAR (Agency for Science, Technology and Research), Singapore, 138634, Singapore
- Integrative Sciences and Engineering Programme, National University of Singapore, Singapore, 119077, Singapore
| | - John Wang
- Institute of Materials Research and Engineering (IMRE), A*STAR (Agency for Science, Technology and Research), Singapore, 138634, Singapore
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117574, Singapore
- Integrative Sciences and Engineering Programme, National University of Singapore, Singapore, 119077, Singapore
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15
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Das D, Prakash J, Goutam UK, Manna S, Gupta SK, Sudarshan K. Oxygen vacancy and valence engineering in CeO 2 through distinct sized ion doping and their impact on oxygen reduction reaction catalysis. Dalton Trans 2022; 51:18572-18582. [PMID: 36444845 DOI: 10.1039/d2dt03198a] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
Defect tuning in ceria to enhance its catalytic properties is a subject of great interest for the scientific community owing to the growing demand for catalytic materials in drug, automobile and chemical industries. Doping induced defect engineering was found to be one of the most sought out strategies particularly in oxides for achieving multifunctionality. Here, in this study, we have doped ceria with distinct sized trivalent rare-earth ions, namely, Y3+, Eu3+ and La3+, using combustion techniques. Positron annihilation lifetime spectroscopy (PALS) suggested enhanced defect density with doping in general and higher concentration of oxygen vacancies in La3+ doped ceria compared to Y3+ and Eu3+ counterparts. X-ray photoelectron spectroscopy (XPS) suggested the existence of both Ce3+ and Ce4+, with the former having higher fraction in CeO2:La3+ compared to CeO2:Y3+. The electron transfer resistance (Rct) reduced in all the doped samples when compared to undoped ceria and they demonstrated improved catalytic activity towards the oxygen reduction reaction (ORR). The highest reduction in Rct was seen in the 5% La doped sample owing to the very high concentration of oxygen vacancies and Ce3+/Ce4+ ratio and CeO2:5.0% La3+ showed the best performance towards ORR electrocatalysis. The studies are expected to help in further tuning the catalysts in terms of dopant concentrations, and in future work, the strategy will be to control the Ce3+/Ce4+ ratio and see its implication in both catalytic and magnetic applications.
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Affiliation(s)
- Debarati Das
- Radiochemistry Division, Bhabha Atomic Research Centre, Mumbai-400085, India. .,Homi Bhabha National Institute, Anushaktinagar, Mumbai-400094, India
| | - Jyoti Prakash
- Homi Bhabha National Institute, Anushaktinagar, Mumbai-400094, India.,Materials Group, Bhabha Atomic Research Centre, Mumbai-400085, India
| | - U K Goutam
- Technical Physics Division, Bhabha Atomic Research Centre, Mumbai-400085, India
| | - S Manna
- Homi Bhabha National Institute, Anushaktinagar, Mumbai-400094, India.,Analytical Chemistry Division, Bhabha Atomic Research Centre, Mumbai-400085, India
| | - Santosh K Gupta
- Radiochemistry Division, Bhabha Atomic Research Centre, Mumbai-400085, India. .,Homi Bhabha National Institute, Anushaktinagar, Mumbai-400094, India
| | - K Sudarshan
- Radiochemistry Division, Bhabha Atomic Research Centre, Mumbai-400085, India. .,Homi Bhabha National Institute, Anushaktinagar, Mumbai-400094, India
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16
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Geng WR, Guo X, Ge HL, Tang YL, Zhu Y, Wang Y, Wu B, Zou MJ, Feng YP, Ma XL. Real-Time Transformation of Flux-Closure Domains with Superhigh Thermal Stability. NANO LETTERS 2022; 22:8892-8899. [PMID: 36331549 DOI: 10.1021/acs.nanolett.2c02969] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Polar topologies have received extensive attention due to their exotic configurations and functionalities. Understanding their responsive behaviors to external stimuli, especially thermal excitation, is highly desirable to extend their applications to high temperature, which is still unclear. Here, combining in situ transmission electron microscopy and phase-field simulations, the thermal dynamics of the flux-closure domains were illuminated in PbTiO3/SrTiO3 multilayers. In-depth analyses suggested that the topological transition processes from a/c domains to flux-closure quadrants were influenced by the boundary conditions of PbTiO3 layers. The symmetrical boundary condition stabilized the flux-closure domains at higher temperature than in the asymmetrical case. Furthermore, the reversible thermal responsive behaviors of the flux-closure domains displayed superior thermal stability, which maintained robust up to 450 °C (near the Curie temperature). This work provides new insights into the dynamics of polar topologies under thermal excitation and facilitates their applications as nanoelectronics under extreme conditions.
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Affiliation(s)
- Wan-Rong Geng
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong523808, People's Republic of China
- Institute of Physics, Chinese Academy of Sciences, Beijing100190, People's Republic of China
| | - Xiangwei Guo
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, 110016Shenyang, People's Republic of China
| | - Hua-Long Ge
- School of Materials and Energy, Yunnan University, Kunming, 650091, People's Republic of China
| | - Yun-Long Tang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, 110016Shenyang, People's Republic of China
| | - Yinlian Zhu
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong523808, People's Republic of China
| | - Yujia Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, 110016Shenyang, People's Republic of China
| | - Bo Wu
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong523808, People's Republic of China
| | - Min-Jie Zou
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong523808, People's Republic of China
- Institute of Physics, Chinese Academy of Sciences, Beijing100190, People's Republic of China
| | - Yan-Peng Feng
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong523808, People's Republic of China
- Institute of Physics, Chinese Academy of Sciences, Beijing100190, People's Republic of China
| | - Xiu-Liang Ma
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong523808, People's Republic of China
- Institute of Physics, Chinese Academy of Sciences, Beijing100190, People's Republic of China
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17
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Zhuo F, Zhou X, Gao S, Höfling M, Dietrich F, Groszewicz PB, Fulanović L, Breckner P, Wohninsland A, Xu BX, Kleebe HJ, Tan X, Koruza J, Damjanovic D, Rödel J. Anisotropic dislocation-domain wall interactions in ferroelectrics. Nat Commun 2022; 13:6676. [PMID: 36335109 PMCID: PMC9637100 DOI: 10.1038/s41467-022-34304-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/02/2022] [Accepted: 10/20/2022] [Indexed: 11/08/2022] Open
Abstract
Dislocations are usually expected to degrade electrical, thermal and optical functionality and to tune mechanical properties of materials. Here, we demonstrate a general framework for the control of dislocation-domain wall interactions in ferroics, employing an imprinted dislocation network. Anisotropic dielectric and electromechanical properties are engineered in barium titanate crystals via well-controlled line-plane relationships, culminating in extraordinary and stable large-signal dielectric permittivity (≈23100) and piezoelectric coefficient (≈2470 pm V-1). In contrast, a related increase in properties utilizing point-plane relation prompts a dramatic cyclic degradation. Observed dielectric and piezoelectric properties are rationalized using transmission electron microscopy and time- and cycle-dependent nuclear magnetic resonance paired with X-ray diffraction. Succinct mechanistic understanding is provided by phase-field simulations and driving force calculations of the described dislocation-domain wall interactions. Our 1D-2D defect approach offers a fertile ground for tailoring functionality in a wide range of functional material systems.
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Affiliation(s)
- Fangping Zhuo
- grid.6546.10000 0001 0940 1669Department of Materials and Earth Sciences, Technical University of Darmstadt, 64287 Darmstadt, Germany
| | - Xiandong Zhou
- grid.6546.10000 0001 0940 1669Department of Materials and Earth Sciences, Technical University of Darmstadt, 64287 Darmstadt, Germany
| | - Shuang Gao
- grid.6546.10000 0001 0940 1669Department of Materials and Earth Sciences, Technical University of Darmstadt, 64287 Darmstadt, Germany ,grid.263901.f0000 0004 1791 7667Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu, 610031 P. R. China
| | - Marion Höfling
- grid.5170.30000 0001 2181 8870Department of Physics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| | - Felix Dietrich
- grid.6546.10000 0001 0940 1669Institute of Physical Chemistry, Technical University of Darmstadt, 64287 Darmstadt, Germany
| | - Pedro B. Groszewicz
- grid.5292.c0000 0001 2097 4740Department of Radiation Science and Technology, Delft University of Technology, Delft, 2629JB Netherlands
| | - Lovro Fulanović
- grid.6546.10000 0001 0940 1669Department of Materials and Earth Sciences, Technical University of Darmstadt, 64287 Darmstadt, Germany
| | - Patrick Breckner
- grid.6546.10000 0001 0940 1669Department of Materials and Earth Sciences, Technical University of Darmstadt, 64287 Darmstadt, Germany
| | - Andreas Wohninsland
- grid.6546.10000 0001 0940 1669Department of Materials and Earth Sciences, Technical University of Darmstadt, 64287 Darmstadt, Germany
| | - Bai-Xiang Xu
- grid.6546.10000 0001 0940 1669Department of Materials and Earth Sciences, Technical University of Darmstadt, 64287 Darmstadt, Germany
| | - Hans-Joachim Kleebe
- grid.6546.10000 0001 0940 1669Department of Materials and Earth Sciences, Technical University of Darmstadt, 64287 Darmstadt, Germany
| | - Xiaoli Tan
- grid.34421.300000 0004 1936 7312Department of Materials Science and Engineering, Iowa State University, Ames, IA 50011 USA
| | - Jurij Koruza
- grid.410413.30000 0001 2294 748XInstitute for Chemistry and Technology of Materials, Graz University of Technology, A-8010 Graz, Austria
| | - Dragan Damjanovic
- grid.5333.60000000121839049Institute of Materials, École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
| | - Jürgen Rödel
- grid.6546.10000 0001 0940 1669Department of Materials and Earth Sciences, Technical University of Darmstadt, 64287 Darmstadt, Germany
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18
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Zhu R, Jiang Z, Zhang X, Zhong X, Tan C, Liu M, Sun Y, Li X, Qi R, Qu K, Liu Z, Wu M, Li M, Huang B, Xu Z, Wang J, Liu K, Gao P, Wang J, Li J, Bai X. Dynamics of Polar Skyrmion Bubbles under Electric Fields. PHYSICAL REVIEW LETTERS 2022; 129:107601. [PMID: 36112449 DOI: 10.1103/physrevlett.129.107601] [Citation(s) in RCA: 15] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/09/2021] [Revised: 06/23/2022] [Accepted: 08/11/2022] [Indexed: 06/15/2023]
Abstract
Room-temperature polar skyrmions, which have been recently discovered in oxide superlattice, have received considerable attention for their potential applications in nanoelectronics owing to their nanometer size, emergent chirality, and negative capacitance. For practical applications, their manipulation using external stimuli is a prerequisite. Herein, we study the dynamics of individual polar skyrmions at the nanoscale via in situ scanning transmission electron microscopy. By monitoring the electric-field-driven creation, annihilation, shrinkage, and expansion of topological structures in real space, we demonstrate the reversible transformation among skyrmion bubbles, elongated skyrmions, and monodomains. The underlying mechanism and interactions are discussed in conjunction with phase-field simulations. The electrical manipulation of nanoscale polar skyrmions allows the tuning of their dielectric permittivity at the atomic scale, and the detailed knowledge of their phase transition behaviors provides fundamentals for their applications in nanoelectronics.
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Affiliation(s)
- Ruixue Zhu
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Zhexin Jiang
- Department of Engineering Mechanics, Zhejiang University, Hangzhou 310027, Zhejiang, China
| | - Xinxin Zhang
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Xiangli Zhong
- School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, Hunan, China
| | - Congbing Tan
- Hunan Provincial Key Laboratory of Intelligent Sensors and Advanced Sensor Materials, School of Physics and Electronics, Hunan University of Science and Technology, Xiangtan 411201, Hunan, China
| | - Mingwei Liu
- Hunan Provincial Key Laboratory of Intelligent Sensors and Advanced Sensor Materials, School of Physics and Electronics, Hunan University of Science and Technology, Xiangtan 411201, Hunan, China
| | - Yuanwei Sun
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Xiaomei Li
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Ruishi Qi
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Ke Qu
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Zhetong Liu
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Mei Wu
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Mingqiang Li
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Boyuan Huang
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, Guangdong, China
| | - Zhi Xu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Jinbin Wang
- School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, Hunan, China
| | - Kaihui Liu
- State Key Laboratory for Artificial Microstructure & Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing, 100871, China
| | - Peng Gao
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing, 100871, China
| | - Jie Wang
- Department of Engineering Mechanics, Zhejiang University, Hangzhou 310027, Zhejiang, China
- Zhejiang Laboratory, Hangzhou 311100, Zhejiang, China
| | - Jiangyu Li
- Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology, Shenzhen 518055, Guangdong, China
| | - Xuedong Bai
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
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19
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Waqar M, Wu H, Chen J, Yao K, Wang J. Evolution from Lead-Based to Lead-Free Piezoelectrics: Engineering of Lattices, Domains, Boundaries, and Defects Leading to Giant Response. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2106845. [PMID: 34799944 DOI: 10.1002/adma.202106845] [Citation(s) in RCA: 18] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/30/2021] [Revised: 09/14/2021] [Indexed: 06/13/2023]
Abstract
Piezoelectric materials are known to mankind for more than a century, with numerous advancements made in both scientific understandings and practical applications. In the last two decades, in particular, the research on piezoelectrics has largely been driven by the constantly changing technological demand, and the drive toward a sustainable society. Hence, environmental-friendly "lead-free piezoelectrics" have emerged in the anticipation of replacing lead-based counterparts with at least comparable performance. However, there are still obstacles to be overcome for realizing this objective, while the efforts in this direction already seem to culminate. Therefore, novel structural strategies need to be designed to address these issues and for further breakthrough in this field. Here, various strategies to enhance piezoelectric properties in lead-free systems with fundamental and historical context, and from atomic to macroscopic scale, are explored. The main challenges currently faced in the transition from lead-based to lead-free piezoelectrics are identified and key milestones for future research in this field are suggested. These include: i) decoding the fundamental mechanisms; ii) large temperature-stable piezoresponse; and iii) fabrication-friendly and tailorable composition. Strategic insights and general guidelines for the synergistic design of new piezoelectric materials for obtaining a large piezoelectric response are also provided.
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Affiliation(s)
- Moaz Waqar
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117574, Singapore
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology, and Research), Singapore, 138634, Singapore
- Integrative Sciences and Engineering Programme, National University of Singapore, Singapore, 119077, Singapore
| | - Haijun Wu
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117574, Singapore
| | - Jingsheng Chen
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117574, Singapore
| | - Kui Yao
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology, and Research), Singapore, 138634, Singapore
| | - John Wang
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117574, Singapore
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20
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Feng YP, Jiang RJ, Zhu YL, Tang YL, Wang YJ, Zou MJ, Geng WR, Ma XL. Strain coupling of ferroelastic domains and misfit dislocations in [101]-oriented ferroelectric PbTiO 3 films. RSC Adv 2022; 12:20423-20431. [PMID: 35919158 PMCID: PMC9280779 DOI: 10.1039/d2ra03584g] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/10/2022] [Accepted: 06/30/2022] [Indexed: 12/02/2022] Open
Abstract
High-index perovskite ferroelectric thin films possess excellent dielectric permittivity, piezoelectric coefficient, and exotic ferroelectric switching properties. They also exhibit complications in the ferroelastic domains, misfit dislocations, and strain-relaxation behaviors. Exploring the relationship of the ferroelastic domains and misfit dislocations may be of benefit for promoting the high-quality growth of these thin films. Here, the strain field of the ferroelastic domains and misfit dislocations in [101]-oriented PbTiO3/(La, Sr)(Al, Ta)O3 epitaxial thin films were investigated by advanced aberration-corrected (scanning) transmission electron microscopy (TEM) combined with geometry phase analysis (GPA). Two types of misfit dislocations with projected Burgers vectors of a[001] or a[100] on the (010) plane were elucidated, whose strain fields included in-plane strain and lattice rotation coupled with the c domains above them. Besides, it was demonstrated that the coupling was kept inside the PbTiO3 films when the film thickness was increased. Furthermore, the polarization rotation was observed in both narrow c domains and around the misfit dislocation cores, which may be attributed to the flexoelectric effect. These results are expected to provide useful information for understanding the nucleation and propagation mechanism of ferroelastic domains and for further modifying the growth of high-index ferroelectric thin films. The strain coupling of misfit dislocations and ferroelastic domains is revealed in [101]-oriented PbTiO3/(La, Sr)(Al, Ta)O3 films and flexoelectric-induced polarization rotation is observed around the misfit dislocation cores.![]()
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Affiliation(s)
- Y. P. Feng
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - R. J. Jiang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Wenhua Road 72, Shenyang 110016, China
| | - Y. L. Zhu
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Y. L. Tang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang 110016, China
| | - Y. J. Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang 110016, China
| | - M. J. Zou
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - W. R. Geng
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - X. L. Ma
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- State Key Lab of Advanced Processing and Recycling on Non-ferrous Metals, Lanzhou University of Technology, Langongping Road 287, Lanzhou 730050, China
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21
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Zhang F, Williams KN, Edwards D, Naden AB, Yao Y, Neumayer SM, Kumar A, Rodriguez BJ, Bassiri-Gharb N. Maximizing Information: A Machine Learning Approach for Analysis of Complex Nanoscale Electromechanical Behavior in Defect-Rich PZT Films. SMALL METHODS 2021; 5:e2100552. [PMID: 34928037 DOI: 10.1002/smtd.202100552] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/25/2021] [Revised: 09/23/2021] [Indexed: 06/14/2023]
Abstract
Scanning Probe Microscopy (SPM) based techniques probe material properties over microscale regions with nanoscale resolution, ultimately resulting in investigation of mesoscale functionalities. Among SPM techniques, piezoresponse force microscopy (PFM) is a highly effective tool in exploring polarization switching in ferroelectric materials. However, its signal is also sensitive to sample-dependent electrostatic and chemo-electromechanical changes. Literature reports have often concentrated on the evaluation of the Off-field piezoresponse, compared to On-field piezoresponse, based on the latter's increased sensitivity to non-ferroelectric contributions. Using machine learning approaches incorporating both Off- and On-field piezoresponse response as well as Off-field resonance frequency to maximize information, switching piezoresponse in a defect-rich Pb(Zr,Ti)O3 thin film is investigated. As expected, one major contributor to the piezoresponse is mostly ferroelectric, coupled with electrostatic phenomena during On-field measurements. A second component is electrostatic in nature, while a third component is likely due to a superposition of multiple non-ferroelectric processes. The proposed approach will enable deeper understanding of switching phenomena in weakly ferroelectric samples and materials with large chemo-electromechanical response.
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Affiliation(s)
- Fengyuan Zhang
- School of Physics, University College Dublin, Belfield, Dublin, D04 V1W8, Ireland
- Conway Institute of Biomolecular and Biomedical Research, University College Dublin, Belfield, Dublin, D04 V1W8, Ireland
| | - Kerisha N Williams
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0405, USA
| | - David Edwards
- School of Physics, University College Dublin, Belfield, Dublin, D04 V1W8, Ireland
- Conway Institute of Biomolecular and Biomedical Research, University College Dublin, Belfield, Dublin, D04 V1W8, Ireland
| | - Aaron B Naden
- University of St Andrews School of Chemistry, Purdie Building, St Andrews, Fife, KY16 9ST, United Kingdom
| | - Yulian Yao
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0405, USA
| | - Sabine M Neumayer
- School of Physics, University College Dublin, Belfield, Dublin, D04 V1W8, Ireland
- Conway Institute of Biomolecular and Biomedical Research, University College Dublin, Belfield, Dublin, D04 V1W8, Ireland
| | - Amit Kumar
- Centre for Nanostructured Media, School of Mathematics and Physics, Queen's University Belfast, Belfast, BT7 1NN, United Kingdom
| | - Brian J Rodriguez
- School of Physics, University College Dublin, Belfield, Dublin, D04 V1W8, Ireland
- Conway Institute of Biomolecular and Biomedical Research, University College Dublin, Belfield, Dublin, D04 V1W8, Ireland
| | - Nazanin Bassiri-Gharb
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0405, USA
- G.W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0405, USA
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22
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Grünebohm A, Marathe M, Khachaturyan R, Schiedung R, Lupascu DC, Shvartsman VV. Interplay of domain structure and phase transitions: theory, experiment and functionality. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 34:073002. [PMID: 34731841 DOI: 10.1088/1361-648x/ac3607] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2021] [Accepted: 11/03/2021] [Indexed: 06/13/2023]
Abstract
Domain walls and phase boundaries are fundamental ingredients of ferroelectrics and strongly influence their functional properties. Although both interfaces have been studied for decades, often only a phenomenological macroscopic understanding has been established. The recent developments in experiments and theory allow to address the relevant time and length scales and revisit nucleation, phase propagation and the coupling of domains and phase transitions. This review attempts to specify regularities of domain formation and evolution at ferroelectric transitions and give an overview on unusual polar topological structures that appear as transient states and at the nanoscale. We survey the benefits, validity, and limitations of experimental tools as well as simulation methods to study phase and domain interfaces. We focus on the recent success of these tools in joint scale-bridging studies to solve long lasting puzzles in the field and give an outlook on recent trends in superlattices.
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Affiliation(s)
- Anna Grünebohm
- Interdisciplinary Centre for Advanced Materials Simulations (ICAMS), Ruhr-University Bochum, 44801 Bochum, Germany
| | - Madhura Marathe
- Interdisciplinary Centre for Advanced Materials Simulations (ICAMS), Ruhr-University Bochum, 44801 Bochum, Germany
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193 Bellaterra, Spain
- Universitat Autònoma de Barcelona, 08193 Bellaterra, Spain
| | - Ruben Khachaturyan
- Interdisciplinary Centre for Advanced Materials Simulations (ICAMS), Ruhr-University Bochum, 44801 Bochum, Germany
| | - Raphael Schiedung
- Interdisciplinary Centre for Advanced Materials Simulations (ICAMS), Ruhr-University Bochum, 44801 Bochum, Germany
- National Institute for Material Science (NIMS), Tsukuba 305-0047, Japan
| | - Doru C Lupascu
- Institute for Materials Science and Center for Nanointegration Duisburg-Essen (CENIDE), University of Duisburg-Essen, 45141 Essen, Germany
| | - Vladimir V Shvartsman
- Institute for Materials Science and Center for Nanointegration Duisburg-Essen (CENIDE), University of Duisburg-Essen, 45141 Essen, Germany
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23
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Krishnamoorthy A, Tiwari SC, Nakano A, Kalia RK, Vashishta P. Electric-field-induced crossover of polarization reversal mechanisms in Al 1-xSc xN ferroelectrics. NANOTECHNOLOGY 2021; 32:49LT02. [PMID: 34433137 DOI: 10.1088/1361-6528/ac20fc] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/08/2021] [Accepted: 08/25/2021] [Indexed: 06/13/2023]
Abstract
Scandium-doped aluminum nitride, Al1-xScxN, represents a new class of displacive ferroelectric materials with high polarization and sharp hysteresis along with high-temperature resilience, facile synthesizability and compatibility with standard CMOS fabrication techniques. The fundamental physics behind the transformation of unswitchable piezoelectric AlN into switchable Al-Sc-N ferroelectrics depends upon important atomic properties such as local structure, dopant distributions and the presence of competing mechanism of polarization switching in the presence of an applied electric-field that have not been understood. We computationally synthesize Al1-xScxN to quantify the inhomogeneity of Sc distribution and phase segregation, and characterize its crystal and electronic structure as a function of Sc-doping. Nudged elastic band calculations of the potential energy surface and quantum molecular dynamics simulations of direct electric-field-driven ferroelectric switching reveal a crossover between two polarization reversal mechanisms-inhomogeneous nucleation-and-growth mechanism originating near Sc-rich regions in the limit of low applied fields and nucleation-limited-switching in the high-field regime. Understanding polarization reversal pathways for these two mechanisms as well as the role of local Sc concentration on activation barriers provides design rules to identify other combinations of dopant elements, such as Zr, Mg etc. to synthesize superior AlN-based ferroelectric materials.
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Affiliation(s)
- Aravind Krishnamoorthy
- Collaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, CA 90089-0242, United States of America
| | - Subodh C Tiwari
- Collaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, CA 90089-0242, United States of America
| | - Aiichiro Nakano
- Collaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, CA 90089-0242, United States of America
| | - Rajiv K Kalia
- Collaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, CA 90089-0242, United States of America
| | - Priya Vashishta
- Collaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, CA 90089-0242, United States of America
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24
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Vogel A, Sarott MF, Campanini M, Trassin M, Rossell MD. Monitoring Electrical Biasing of Pb(Zr 0.2Ti 0.8)O 3 Ferroelectric Thin Films In Situ by DPC-STEM Imaging. MATERIALS (BASEL, SWITZERLAND) 2021; 14:4749. [PMID: 34443272 PMCID: PMC8400982 DOI: 10.3390/ma14164749] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/22/2021] [Revised: 08/18/2021] [Accepted: 08/19/2021] [Indexed: 11/17/2022]
Abstract
Increased data storage densities are required for the next generation of nonvolatile random access memories and data storage devices based on ferroelectric materials. Yet, with intensified miniaturization, these devices face a loss of their ferroelectric properties. Therefore, a full microscopic understanding of the impact of the nanoscale defects on the ferroelectric switching dynamics is crucial. However, collecting real-time data at the atomic and nanoscale remains very challenging. In this work, we explore the ferroelectric response of a Pb(Zr0.2Ti0.8)O3 thin film ferroelectric capacitor to electrical biasing in situ in the transmission electron microscope. Using a combination of high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) and differential phase contrast (DPC)-STEM imaging we unveil the structural and polarization state of the ferroelectric thin film, integrated into a capacitor architecture, before and during biasing. Thus, we can correlate real-time changes in the DPC signal with the presence of misfit dislocations and ferroelastic domains. A reduction in the domain wall velocity of 24% is measured in defective regions of the film when compared to predominantly defect-free regions.
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Affiliation(s)
- Alexander Vogel
- Electron Microscopy Center, Empa, Swiss Federal Laboratories for Material Science and Technology, 8600 Dübendorf, Switzerland;
| | - Martin F. Sarott
- Department of Materials, Eidgenössische Technische Hochschule Zürich, 8093 Zürich, Switzerland; (M.F.S.); (M.T.)
| | - Marco Campanini
- Electron Microscopy Center, Empa, Swiss Federal Laboratories for Material Science and Technology, 8600 Dübendorf, Switzerland;
| | - Morgan Trassin
- Department of Materials, Eidgenössische Technische Hochschule Zürich, 8093 Zürich, Switzerland; (M.F.S.); (M.T.)
| | - Marta D. Rossell
- Electron Microscopy Center, Empa, Swiss Federal Laboratories for Material Science and Technology, 8600 Dübendorf, Switzerland;
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25
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Höfling M, Zhou X, Riemer LM, Bruder E, Liu B, Zhou L, Groszewicz PB, Zhuo F, Xu BX, Durst K, Tan X, Damjanovic D, Koruza J, Rödel J. Control of polarization in bulk ferroelectrics by mechanical dislocation imprint. Science 2021; 372:961-964. [PMID: 34045350 DOI: 10.1126/science.abe3810] [Citation(s) in RCA: 30] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/18/2020] [Accepted: 04/26/2021] [Indexed: 11/02/2022]
Abstract
Defects are essential to engineering the properties of functional materials ranging from semiconductors and superconductors to ferroics. Whereas point defects have been widely exploited, dislocations are commonly viewed as problematic for functional materials and not as a microstructural tool. We developed a method for mechanically imprinting dislocation networks that favorably skew the domain structure in bulk ferroelectrics and thereby tame the large switching polarization and make it available for functional harvesting. The resulting microstructure yields a strong mechanical restoring force to revert electric field-induced domain wall displacement on the macroscopic level and high pinning force on the local level. This induces a giant increase of the dielectric and electromechanical response at intermediate electric fields in barium titanate [electric field-dependent permittivity (ε33) ≈ 5800 and large-signal piezoelectric coefficient (d 33*) ≈ 1890 picometers/volt]. Dislocation-based anisotropy delivers a different suite of tools with which to tailor functional materials.
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Affiliation(s)
- Marion Höfling
- Department of Materials and Earth Sciences, Technical University of Darmstadt, 64287 Darmstadt, Germany
| | - Xiandong Zhou
- Department of Materials and Earth Sciences, Technical University of Darmstadt, 64287 Darmstadt, Germany
| | - Lukas M Riemer
- Group for Ferroelectrics and Functional Oxides, École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
| | - Enrico Bruder
- Department of Materials and Earth Sciences, Technical University of Darmstadt, 64287 Darmstadt, Germany
| | - Binzhi Liu
- Department of Materials Science and Engineering, Iowa State University, Ames, IA 50011, USA
| | - Lin Zhou
- Department of Materials Science and Engineering, Iowa State University, Ames, IA 50011, USA.,Ames Laboratory, U.S. Department of Energy, Ames, IA 50011, USA
| | | | - Fangping Zhuo
- Department of Materials and Earth Sciences, Technical University of Darmstadt, 64287 Darmstadt, Germany
| | - Bai-Xiang Xu
- Department of Materials and Earth Sciences, Technical University of Darmstadt, 64287 Darmstadt, Germany
| | - Karsten Durst
- Department of Materials and Earth Sciences, Technical University of Darmstadt, 64287 Darmstadt, Germany
| | - Xiaoli Tan
- Department of Materials Science and Engineering, Iowa State University, Ames, IA 50011, USA
| | - Dragan Damjanovic
- Group for Ferroelectrics and Functional Oxides, École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
| | - Jurij Koruza
- Department of Materials and Earth Sciences, Technical University of Darmstadt, 64287 Darmstadt, Germany.
| | - Jürgen Rödel
- Department of Materials and Earth Sciences, Technical University of Darmstadt, 64287 Darmstadt, Germany.
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26
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Nukala P, Ahmadi M, Wei Y, de Graaf S, Stylianidis E, Chakrabortty T, Matzen S, Zandbergen HW, Björling A, Mannix D, Carbone D, Kooi B, Noheda B. Reversible oxygen migration and phase transitions in hafnia-based ferroelectric devices. Science 2021; 372:630-635. [PMID: 33858991 DOI: 10.1126/science.abf3789] [Citation(s) in RCA: 52] [Impact Index Per Article: 17.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/22/2020] [Accepted: 04/02/2021] [Indexed: 01/25/2023]
Abstract
Unconventional ferroelectricity exhibited by hafnia-based thin films-robust at nanoscale sizes-presents tremendous opportunities in nanoelectronics. However, the exact nature of polarization switching remains controversial. We investigated a La0.67Sr0.33MnO3/Hf0.5Zr0.5O2 capacitor interfaced with various top electrodes while performing in situ electrical biasing using atomic-resolution microscopy with direct oxygen imaging as well as with synchrotron nanobeam diffraction. When the top electrode is oxygen reactive, we observe reversible oxygen vacancy migration with electrodes as the source and sink of oxygen and the dielectric layer acting as a fast conduit at millisecond time scales. With nonreactive top electrodes and at longer time scales (seconds), the dielectric layer also acts as an oxygen source and sink. Our results show that ferroelectricity in hafnia-based thin films is unmistakably intertwined with oxygen voltammetry.
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Affiliation(s)
- Pavan Nukala
- Zernike Institute of Advanced Materials, University of Groningen, 9747 AG Groningen, Netherlands. .,Centre for Nano Science and Engineering, Indian Institute of Science, Bengaluru, 560012, India
| | - Majid Ahmadi
- Zernike Institute of Advanced Materials, University of Groningen, 9747 AG Groningen, Netherlands.,CogniGron (Groningen Cognitive Systems and Materials Center), University of Groningen, 9747 AG Groningen, Netherlands
| | - Yingfen Wei
- Zernike Institute of Advanced Materials, University of Groningen, 9747 AG Groningen, Netherlands.,CogniGron (Groningen Cognitive Systems and Materials Center), University of Groningen, 9747 AG Groningen, Netherlands
| | - Sytze de Graaf
- Zernike Institute of Advanced Materials, University of Groningen, 9747 AG Groningen, Netherlands
| | - Evgenios Stylianidis
- Zernike Institute of Advanced Materials, University of Groningen, 9747 AG Groningen, Netherlands.,Department of Physics and Astronomy, University College London, London WC1E 6BT, UK
| | - Tuhin Chakrabortty
- Centre for Nano Science and Engineering, Indian Institute of Science, Bengaluru, 560012, India
| | - Sylvia Matzen
- Center for Nanoscience and Nanotechnology, Paris-Saclay University, CNRS, 91120 Palaiseau, France
| | - Henny W Zandbergen
- Kavli Institute of Nanoscience, Faculty of Applied Sciences, Delft University of Technology, 2628 CJ Delft, Netherlands
| | | | - Dan Mannix
- University Grenoble Alpes, CNRS, Institut Néel, 38042 Grenoble, France.,European Spallation Source, SE-221 00 Lund, Sweden.,Department of Chemistry, Aarhus University, DK-8000 Aarhus, Denmark
| | - Dina Carbone
- MAX IV Laboratory, Lund University, SE-221 00 Lund, Sweden
| | - Bart Kooi
- Zernike Institute of Advanced Materials, University of Groningen, 9747 AG Groningen, Netherlands.,CogniGron (Groningen Cognitive Systems and Materials Center), University of Groningen, 9747 AG Groningen, Netherlands
| | - Beatriz Noheda
- Zernike Institute of Advanced Materials, University of Groningen, 9747 AG Groningen, Netherlands. .,CogniGron (Groningen Cognitive Systems and Materials Center), University of Groningen, 9747 AG Groningen, Netherlands
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27
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Huang Q, Chen Z, Cabral MJ, Wang F, Zhang S, Li F, Li Y, Ringer SP, Luo H, Mai YW, Liao X. Direct observation of nanoscale dynamics of ferroelectric degradation. Nat Commun 2021; 12:2095. [PMID: 33828086 PMCID: PMC8027400 DOI: 10.1038/s41467-021-22355-1] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/13/2020] [Accepted: 03/11/2021] [Indexed: 02/01/2023] Open
Abstract
Failure of polarization reversal, i.e., ferroelectric degradation, induced by cyclic electric loadings in ferroelectric materials, has been a long-standing challenge that negatively impacts the application of ferroelectrics in devices where reliability is critical. It is generally believed that space charges or injected charges dominate the ferroelectric degradation. However, the physics behind the phenomenon remains unclear. Here, using in-situ biasing transmission electron microscopy, we discover change of charge distribution in thin ferroelectrics during cyclic electric loadings. Charge accumulation at domain walls is the main reason of the formation of c domains, which are less responsive to the applied electric field. The rapid growth of the frozen c domains leads to the ferroelectric degradation. This finding gives insights into the nature of ferroelectric degradation in nanodevices, and reveals the role of the injected charges in polarization reversal.
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Affiliation(s)
- Qianwei Huang
- grid.1013.30000 0004 1936 834XSchool of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, Sydney, NSW Australia
| | - Zibin Chen
- grid.1013.30000 0004 1936 834XSchool of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, Sydney, NSW Australia
| | - Matthew J. Cabral
- grid.1013.30000 0004 1936 834XSchool of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, Sydney, NSW Australia
| | - Feifei Wang
- grid.412531.00000 0001 0701 1077Key Laboratory of Optoelectronic Material and Device, Department of Physics, Shanghai Normal University, Shanghai, China
| | - Shujun Zhang
- grid.1007.60000 0004 0486 528XInstitute for Superconducting and Electronic Materials, Australian Institute of Innovative Materials, University of Wollongong, Wollongong, NSW Australia
| | - Fei Li
- grid.43169.390000 0001 0599 1243Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Xi’an Jiaotong University, Xi’an, China
| | - Yulan Li
- grid.451303.00000 0001 2218 3491Pacific Northwest National Laboratory, Richland, WA USA
| | - Simon P. Ringer
- grid.1013.30000 0004 1936 834XSchool of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, Sydney, NSW Australia
| | - Haosu Luo
- grid.9227.e0000000119573309Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, China
| | - Yiu-Wing Mai
- grid.1013.30000 0004 1936 834XSchool of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, Sydney, NSW Australia
| | - Xiaozhou Liao
- grid.1013.30000 0004 1936 834XSchool of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, Sydney, NSW Australia
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28
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Guy JGM, Cochard C, Aguado-Puente P, Soergel E, Whatmore RW, Conroy M, Moore K, Courtney E, Harvey A, Bangert U, Kumar A, McQuaid RGP, Gregg JM. Anomalous Motion of Charged Domain Walls and Associated Negative Capacitance in Copper-Chlorine Boracite. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2008068. [PMID: 33734520 DOI: 10.1002/adma.202008068] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/30/2020] [Revised: 01/27/2021] [Indexed: 06/12/2023]
Abstract
During switching, the microstructure of a ferroelectric normally adapts to align internal dipoles with external electric fields. Favorably oriented dipolar regions (domains) grow at the expense of those in unfavorable orientations and this is manifested in a predictable field-induced motion of the walls that separate one domain from the next. Here, the discovery that specific charged 90°domain walls in copper-chlorine boracite move in the opposite direction to that expected, increasing the size of the domain in which polarization is anti-aligned with the applied field, is reported. Polarization-field (P-E) hysteresis loops, inferred from optical imaging, show negative gradients and non-transient negative capacitance, throughout the P-E cycle. Switching currents (generated by the relative motion between domain walls and sensing electrodes) confirm this, insofar as their signs are opposite to those expected conventionally. For any given bias, the integrated switching charge due to this anomalous wall motion is directly proportional to time, indicating that the magnitude of the negative capacitance component should be inversely related to frequency. This passes Jonscher's test for the misinterpretation of positive inductance and gives confidence that field-induced motion of these specific charged domain walls generates a measurable negative capacitance contribution to the overall dielectric response.
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Affiliation(s)
- Joseph G M Guy
- School of Mathematics and Physics, Queen's University Belfast, Belfast, BT7 1NN, UK
| | - Charlotte Cochard
- School of Mathematics and Physics, Queen's University Belfast, Belfast, BT7 1NN, UK
- School of Science and Engineering, University of Dundee, Nethergate, Dundee, DD1 4HN, UK
| | - Pablo Aguado-Puente
- School of Mathematics and Physics, Queen's University Belfast, Belfast, BT7 1NN, UK
| | - Elisabeth Soergel
- Institute of Physics, University of Bonn, Wegelerstrasse 8, Bonn, 53115, Germany
| | - Roger W Whatmore
- Department of Materials, Imperial College London, Exhibition Road, London, SW7 2AZ, UK
| | - Michele Conroy
- Department of Physics and Bernal Institute, University of Limerick, Limerick, V94 T9PX, Ireland
| | - Kalani Moore
- Department of Physics and Bernal Institute, University of Limerick, Limerick, V94 T9PX, Ireland
| | - Eileen Courtney
- Department of Physics and Bernal Institute, University of Limerick, Limerick, V94 T9PX, Ireland
| | - Alan Harvey
- Department of Physics and Bernal Institute, University of Limerick, Limerick, V94 T9PX, Ireland
| | - Ursel Bangert
- Department of Physics and Bernal Institute, University of Limerick, Limerick, V94 T9PX, Ireland
| | - Amit Kumar
- School of Mathematics and Physics, Queen's University Belfast, Belfast, BT7 1NN, UK
| | - Raymond G P McQuaid
- School of Mathematics and Physics, Queen's University Belfast, Belfast, BT7 1NN, UK
| | - J Marty Gregg
- School of Mathematics and Physics, Queen's University Belfast, Belfast, BT7 1NN, UK
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29
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Tückmantel P, Gaponenko I, Caballero N, Agar JC, Martin LW, Giamarchi T, Paruch P. Local Probe Comparison of Ferroelectric Switching Event Statistics in the Creep and Depinning Regimes in Pb(Zr_{0.2}Ti_{0.8})O_{3} Thin Films. PHYSICAL REVIEW LETTERS 2021; 126:117601. [PMID: 33798378 DOI: 10.1103/physrevlett.126.117601] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/25/2020] [Revised: 10/28/2020] [Accepted: 01/26/2021] [Indexed: 06/12/2023]
Abstract
Ferroelectric materials provide a useful model system to explore the jerky, highly nonlinear dynamics of elastic interfaces in disordered media. The distribution of nanoscale switching event sizes is studied in two Pb(Zr_{0.2}Ti_{0.8})O_{3} thin films with different disorder landscapes using piezoresponse force microscopy. While the switching event statistics show the expected power-law scaling, significant variations in the value of the scaling exponent τ are seen, possibly as a consequence of the different intrinsic disorder landscapes in the samples and of further alterations under high tip bias applied during domain writing. Importantly, higher exponent values (1.98-2.87) are observed when crackling statistics are acquired only for events occurring in the creep regime. The exponents are systematically lowered when all events across both creep and depinning regimes are considered-the first time such a distinction is made in studies of ferroelectric materials. These results show that distinguishing the two regimes is of crucial importance, significantly affecting the exponent value and potentially leading to incorrect assignment of universality class.
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Affiliation(s)
- Philippe Tückmantel
- Department of Quantum Matter Physics, University of Geneva, CH-1211, Geneva, Switzerland
| | - Iaroslav Gaponenko
- Department of Quantum Matter Physics, University of Geneva, CH-1211, Geneva, Switzerland
| | - Nirvana Caballero
- Department of Quantum Matter Physics, University of Geneva, CH-1211, Geneva, Switzerland
| | - Joshua C Agar
- Department of Material Science and Engineering, University of California, Berkeley, California 94720, USA
| | - Lane W Martin
- Department of Material Science and Engineering, University of California, Berkeley, California 94720, USA
| | - Thierry Giamarchi
- Department of Quantum Matter Physics, University of Geneva, CH-1211, Geneva, Switzerland
| | - Patrycja Paruch
- Department of Quantum Matter Physics, University of Geneva, CH-1211, Geneva, Switzerland
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30
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Yao FZ, Yuan Q, Wang Q, Wang H. Multiscale structural engineering of dielectric ceramics for energy storage applications: from bulk to thin films. NANOSCALE 2020; 12:17165-17184. [PMID: 32789414 DOI: 10.1039/d0nr04479b] [Citation(s) in RCA: 19] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Dielectric capacitors with the prominent features of ultrafast charging-discharging rates and ultrahigh power densities are ubiquitous components in modern electronics. To meet the growing demand for electronics miniaturization, dielectric capacitors with high energy storage properties are extensively researched. Here we present an overview of the recent progress in the engineering of multiscale structures of dielectric ceramics ranging from bulk to thin films. This article commences with a brief introduction of the fundamentals of dielectric ceramics, including primary parameters, a library of dielectric ceramics, and multiscale structures. Emphases are placed on the relationship between multiscale structures and energy storage properties and the rational structure design principles in dielectric ceramics. Also included are currently available multilayer ceramic capacitors based on multiscale engineered ceramic structures. Finally, challenges along with opportunities for further research and development of high-performance dielectric ceramics for electrostatic energy storage are highlighted.
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Affiliation(s)
- Fang-Zhou Yao
- State Key Laboratory for Mechanical Behavior of Materials & School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an 710049, China.
| | - Qibin Yuan
- State Key Laboratory for Mechanical Behavior of Materials & School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an 710049, China. and School of Electronic Information and Artificial Intelligence, Shaanxi University of Science and Technology, Xi'an, Shaanxi 710021, China
| | - Qing Wang
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
| | - Hong Wang
- State Key Laboratory for Mechanical Behavior of Materials & School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an 710049, China. and Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China and Shenzhen Engineering Research Center for Novel Electronic Information Materials and Devices, Southern University of Science and Technology, Shenzhen 518055, China
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31
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Atomic-scale observations of electrical and mechanical manipulation of topological polar flux closure. Proc Natl Acad Sci U S A 2020; 117:18954-18961. [PMID: 32709747 PMCID: PMC7430988 DOI: 10.1073/pnas.2007248117] [Citation(s) in RCA: 20] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022] Open
Abstract
Flux-closures, stable topological polar structures of nanometer size, are considered to be promising candidates as elements of future nanoelectronic and electromechanical devices. Understanding their phase transition pathways under external stimuli is therefore of vital importance for these potential applications. Here, using an atomically resolved in situ electron microscopy technique, we track the evolutions of the polarization of the flux-closure structure under both electric and stress fields with atomic resolution. We find that the flux-closure can be reversibly and controllably manipulated between the topological and ordinary ferroelectric states, enabling potential applications in electromechanical and nanoelectronic devices. The ability to controllably manipulate complex topological polar configurations such as polar flux-closures via external stimuli may allow the construction of new electromechanical and nanoelectronic devices. Here, using atomically resolved in situ scanning transmission electron microscopy, we find that the polar flux-closures in PbTiO3/SrTiO3 superlattice films are mobile and can be reversibly switched to ordinary single ferroelectric c or a domains under an applied electric field or stress. Specifically, the electric field initially drives movement of a flux-closure via domain wall motion and then breaks it to form intermediate a/c striped domains, whereas mechanical stress first squeezes the core of a flux-closure toward the interface and then form a/c domains with disappearance of the core. After removal of the external stimulus, the flux-closure structure spontaneously recovers. These observations can be precisely reproduced by phase field simulations, which also reveal the evolutions of the competing energies during phase transitions. Such reversible switching between flux-closures and ordinary ferroelectric states provides a foundation for potential electromechanical and nanoelectronic applications.
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32
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Pal S, Swain AB, N V S, Murugavel P. Electric field and mechanical stress driven structural inhomogeneity and compositionally induced relaxor phase transformation in modified BaTiO 3based lead-free ferroelectrics. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:365401. [PMID: 32357355 DOI: 10.1088/1361-648x/ab8f5c] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/12/2020] [Accepted: 05/01/2020] [Indexed: 06/11/2023]
Abstract
The compositionally induced ferroelectric to relaxor transformation via diffuse phase transition and structural disorder by external stimuli is explored in lead-free Ba1-x(Bi0.5Li0.5)xTiO3(x= 0, 0.05, 0.1, 0.15, and 0.20) ferroelectric system. X-ray diffraction studies reveal the coexistence of the monoclinic phase along with the orthorhombic and tetragonal phases in BaTiO3,which could be the reason for its superior dielectric properties. The dielectric studies reveal that thex= 0.15 sample shows intrinsic dielectric relaxation due to the quenched-in random field caused by the atomic displacement. The ferroelectric to relaxor phase transformation is analysed by modified Curie-Weiss law. Furthermore, the driving forces for the relaxor behaviour in the system are attributed to the compositionally induced charge disorder, quenched-in random field, and oxygen vacancy related defects in the BBLT system. The detailed structural analysis on the relaxor ferroelectric samples displays direct evidence for the electric field and mechanical stress driven structural inhomogeneity. Notably, mechanically stressed and electrically poledx= 0.15 sample exhibits a remarkable 50% and 37% increase in orthorhombic phase fraction, respectively. Overall, the comprehensive studies on the lead-free modified BaTiO3samples give further insight into understanding the relaxor system.
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Affiliation(s)
- Subhajit Pal
- Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India
| | - Atal Bihari Swain
- Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India
| | - Sarath N V
- Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India
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33
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Barrozo P, Småbråten DR, Tang YL, Prasad B, Saremi S, Ozgur R, Thakare V, Steinhardt RA, Holtz ME, Stoica VA, Martin LW, Schlom DG, Selbach SM, Ramesh R. Defect-Enhanced Polarization Switching in the Improper Ferroelectric LuFeO 3. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2000508. [PMID: 32346899 DOI: 10.1002/adma.202000508] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/21/2020] [Revised: 03/15/2020] [Accepted: 03/24/2020] [Indexed: 06/11/2023]
Abstract
Results of switching behavior of the improper ferroelectric LuFeO3 are presented. Using a model set of films prepared under controlled chemical and growth-rate conditions, it is shown that defects can reduce the quasi-static switching voltage by up to 40% in qualitative agreement with first-principles calculations. Switching studies show that the coercive field has a stronger frequency dispersion for the improper ferroelectrics compared to a proper ferroelectric such as PbTiO3 . It is concluded that the primary structural order parameter controls the switching dynamics of such improper ferroelectrics.
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Affiliation(s)
- Petrucio Barrozo
- Physics Department, Federal University of Sergipe, São Cristóvão, Sergipe, 49100-000, Brazil
- Department of Materials Science and Engineering and Department of Physics, University of California, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Didrik René Småbråten
- Department of Materials Science and Engineering, NTNU Norwegian University of Science and Technology, Norway
| | - Yun-Long Tang
- Department of Materials Science and Engineering and Department of Physics, University of California, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Bhagwati Prasad
- Department of Materials Science and Engineering and Department of Physics, University of California, Berkeley, CA, 94720, USA
| | - Sahar Saremi
- Department of Materials Science and Engineering and Department of Physics, University of California, Berkeley, CA, 94720, USA
| | - Rustem Ozgur
- Department of Materials Science and Engineering and Department of Physics, University of California, Berkeley, CA, 94720, USA
| | - Vishal Thakare
- Department of Materials Science and Engineering and Department of Physics, University of California, Berkeley, CA, 94720, USA
| | - Rachel A Steinhardt
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY, 15805, USA
| | - Megan E Holtz
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY, 15805, USA
| | - Vladimir Alexandru Stoica
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA, 16802, USA
| | - Lane W Martin
- Department of Materials Science and Engineering and Department of Physics, University of California, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Darrel G Schlom
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY, 15805, USA
| | - Sverre Magnus Selbach
- Department of Materials Science and Engineering, NTNU Norwegian University of Science and Technology, Norway
| | - Ramamoorthy Ramesh
- Department of Materials Science and Engineering and Department of Physics, University of California, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
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34
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Kim BS, Hyun SD, Moon T, Do Kim K, Lee YH, Park HW, Lee YB, Roh J, Kim BY, Kim HH, Park MH, Hwang CS. A Comparative Study on the Ferroelectric Performances in Atomic Layer Deposited Hf 0.5Zr 0.5O 2 Thin Films Using Tetrakis(ethylmethylamino) and Tetrakis(dimethylamino) Precursors. NANOSCALE RESEARCH LETTERS 2020; 15:72. [PMID: 32266598 PMCID: PMC7138889 DOI: 10.1186/s11671-020-03301-4] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/27/2019] [Accepted: 03/19/2020] [Indexed: 06/01/2023]
Abstract
The chemical, physical, and electrical properties of the atomic layer deposited Hf0.5Zr0.5O2 thin films using tetrakis(ethylmethylamino) (TEMA) and tetrakis(dimethylamino) (TDMA) precursors are compared. The ligand of the metal-organic precursors strongly affects the residual C concentration, grain size, and the resulting ferroelectric properties. Depositing Hf0.5Zr0.5O2 films with the TDMA precursors results in lower C concentration and slightly larger grain size. These findings are beneficial to grow more ferroelectric-phase-dominant film, which mitigates its wake-up effect. From the wake-up test of the TDMA-Hf0.5Zr0.5O2 film with a 2.8 MV/cm cycling field, the adverse wake-up effect was well suppressed up to 105 cycles, with a reasonably high double remanent polarization value of ~40 μC/cm2. The film also showed reliable switching up to 109 cycles with the 2.5 MV/cm cycling field without involving the wake-up effect but with the typical fatigue behavior.
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Affiliation(s)
- Baek Su Kim
- Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea
| | - Seung Dam Hyun
- Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea
| | - Taehwan Moon
- Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea
| | - Keum Do Kim
- Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea
| | - Young Hwan Lee
- Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea
| | - Hyeon Woo Park
- Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea
| | - Yong Bin Lee
- Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea
| | - Jangho Roh
- Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea
| | - Beom Yong Kim
- Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea
| | - Ho Hyun Kim
- Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea
| | - Min Hyuk Park
- School of Materials Science and Engineering, Pusan National University, 2 Busandaehak-ro-63beon-gil, Geumjeong-gu, Busan, 46241, Republic of Korea.
| | - Cheol Seong Hwang
- Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea.
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35
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Li X, Yin L, Lai Z, Wu M, Sheng Y, Zhang L, Sun Y, Chen S, Li X, Zhang J, Li Y, Liu K, Wang K, Yu D, Bai X, Mi W, Gao P. Atomic origin of spin-valve magnetoresistance at the SrRuO 3 grain boundary. Natl Sci Rev 2020; 7:755-762. [PMID: 34692094 PMCID: PMC8288863 DOI: 10.1093/nsr/nwaa004] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/28/2019] [Revised: 01/11/2020] [Accepted: 01/12/2020] [Indexed: 11/14/2022] Open
Abstract
Defects exist ubiquitously in crystal materials, and usually exhibit a very different nature from the bulk matrix. Hence, their presence can have significant impacts on the properties of devices. Although it is well accepted that the properties of defects are determined by their unique atomic environments, the precise knowledge of such relationships is far from clear for most oxides because of the complexity of defects and difficulties in characterization. Here, we fabricate a 36.8° SrRuO3 grain boundary of which the transport measurements show a spin-valve magnetoresistance. We identify its atomic arrangement, including oxygen, using scanning transmission electron microscopy and spectroscopy. Based on the as-obtained atomic structure, the density functional theory calculations suggest that the spin-valve magnetoresistance occurs because of dramatically reduced magnetic moments at the boundary. The ability to manipulate magnetic properties at the nanometer scale via defect control allows new strategies to design magnetic/electronic devices with low-dimensional magnetic order.
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Affiliation(s)
- Xujing Li
- Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, China
- Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Li Yin
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin 300354, China
| | - Zhengxun Lai
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin 300354, China
| | - Mei Wu
- Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, China
- International Center for Quantum Materials, Peking University, Beijing 100871, China
| | - Yu Sheng
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Lei Zhang
- Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Yuanwei Sun
- Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, China
- International Center for Quantum Materials, Peking University, Beijing 100871, China
| | - Shulin Chen
- Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, China
| | - Xiaomei Li
- Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Jingmin Zhang
- Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, China
| | - Yuehui Li
- Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, China
- International Center for Quantum Materials, Peking University, Beijing 100871, China
| | - Kaihui Liu
- State Key Laboratory for Artificial Microstructure & Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Centre of Quantum Matter, Beijing 100871, China
| | - Kaiyou Wang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Dapeng Yu
- Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, China
- State Key Laboratory for Artificial Microstructure & Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
- Shenzhen Institute for Quantum Science and Engineering, and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Xuedong Bai
- Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Collaborative Innovation Centre of Quantum Matter, Beijing 100871, China
| | - Wenbo Mi
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin 300354, China
| | - Peng Gao
- Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, China
- International Center for Quantum Materials, Peking University, Beijing 100871, China
- Collaborative Innovation Centre of Quantum Matter, Beijing 100871, China
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36
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Campanini M, Erni R, Rossell MD. Probing local order in multiferroics by transmission electron microscopy. PHYSICAL SCIENCES REVIEWS 2020. [DOI: 10.1515/psr-2019-0068] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/15/2022]
Abstract
Abstract
The ongoing trend toward miniaturization has led to an increased interest in the magnetoelectric effect, which could yield entirely new device concepts, such as electric field-controlled magnetic data storage. As a result, much work is being devoted to developing new robust room temperature (RT) multiferroic materials that combine ferromagnetism and ferroelectricity. However, the development of new multiferroic devices has proved unexpectedly challenging. Thus, a better understanding of the properties of multiferroic thin films and the relation with their microstructure is required to help drive multiferroic devices toward technological application. This review covers in a concise manner advanced analytical imaging methods based on (scanning) transmission electron microscopy which can potentially be used to characterize complex multiferroic materials. It consists of a first broad introduction to the topic followed by a section describing the so-called phase-contrast methods, which can be used to map the polar and magnetic order in magnetoelectric multiferroics at different spatial length scales down to atomic resolution. Section 3 is devoted to electron nanodiffraction methods. These methods allow measuring local strains, identifying crystal defects and determining crystal structures, and thus offer important possibilities for the detailed structural characterization of multiferroics in the ultrathin regime or inserted in multilayers or superlattice architectures. Thereafter, in Section 4, methods are discussed which allow for analyzing local strain, whereas in Section 5 methods are addressed which allow for measuring local polarization effects on a length scale of individual unit cells. Here, it is shown that the ferroelectric polarization can be indirectly determined from the atomic displacements measured in atomic resolution images. Finally, a brief outlook is given on newly established methods to probe the behavior of ferroelectric and magnetic domains and nanostructures during in situ heating/electrical biasing experiments. These in situ methods are just about at the launch of becoming increasingly popular, particularly in the field of magnetoelectric multiferroics, and shall contribute significantly to understanding the relationship between the domain dynamics of multiferroics and the specific microstructure of the films providing important guidance to design new devices and to predict and mitigate failures.
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37
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He Y, Bahr B, Si M, Ye P, Weinstein D. A tunable ferroelectric based unreleased RF resonator. MICROSYSTEMS & NANOENGINEERING 2020; 6:8. [PMID: 34567623 PMCID: PMC8433143 DOI: 10.1038/s41378-019-0110-1] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/14/2019] [Revised: 08/14/2019] [Accepted: 09/16/2019] [Indexed: 05/31/2023]
Abstract
This paper introduces the first tunable ferroelectric capacitor (FeCAP)-based unreleased RF MEMS resonator, integrated seamlessly in Texas Instruments' 130 nm Ferroelectric RAM (FeRAM) technology. The designs presented here are monolithically integrated in solid-state CMOS technology, with no post-processing or release step typical of other MEMS devices. An array of FeCAPs in this complementary metal-oxide-semiconductor (CMOS) technology's back-end-of-line (BEOL) process were used to define the acoustic resonance cavity as well as the electromechanical transducers. To achieve high quality factor (Q) of the resonator, acoustic waveguiding for vertical confinement within the CMOS stack is studied and optimized. Additional design considerations are discussed to obtain lateral confinement and suppression of spurious modes. An FeCAP resonator is demonstrated with fundamental resonance at 703 MHz and Q of 1012. This gives a frequency-quality factor product f ⋅ Q = 7.11 × 1 0 11 which is 1.6× higher than the most state-of-the-art Pb(Zr,Ti)O3 (PZT) resonators. Due to the ferroelectric characteristics of the FeCAPs, transduction of the resonator can be switched on and off by adjusting the electric polarization. In this case, the resonance can be turned off completely at ±0.3 V corresponding to the coercive voltage of the constituent FeCAP transducers. These novel switchable resonators may have promising applications in on-chip timing, ad-hoc radio front ends, and chip-scale sensors.
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Affiliation(s)
- Yanbo He
- Purdue University, West Lafayette, IN USA
| | - Bichoy Bahr
- Kilby Labs, Texas Instruments, Dallas, TX USA
| | - Mengwei Si
- Purdue University, West Lafayette, IN USA
| | - Peide Ye
- Purdue University, West Lafayette, IN USA
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38
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Gasparotto P, Bochicchio D, Ceriotti M, Pavan GM. Identifying and Tracking Defects in Dynamic Supramolecular Polymers. J Phys Chem B 2020; 124:589-599. [PMID: 31888337 DOI: 10.1021/acs.jpcb.9b11015] [Citation(s) in RCA: 30] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/28/2022]
Abstract
A central paradigm of self-assembly is to create ordered structures starting from molecular monomers that spontaneously recognize and interact with each other via noncovalent interactions. In recent years, great efforts have been directed toward perfecting the design of a variety of supramolecular polymers and materials with different architectures. The resulting structures are often thought of as ideally perfect, defect-free supramolecular fibers, micelles, vesicles, etc., having an intrinsic dynamic character, which are typically studied at the level of statistical ensembles to assess their average properties. However, molecular simulations recently demonstrated that local defects that may be present or may form in these assemblies, and which are poorly captured by conventional approaches, are key to controlling their dynamic behavior and properties. The study of these defects poses considerable challenges, as the flexible/dynamic nature of these soft systems makes it difficult to identify what effectively constitutes a defect and to characterize its stability and evolution. Here, we demonstrate the power of unsupervised machine-learning techniques to systematically identify and compare defects in supramolecular polymer variants in different conditions, using as a benchmark 5 Å resolution coarse-grained molecular simulations of a family of supramolecular polymers. We show that this approach allows a complete data-driven characterization of the internal structure and dynamics of these complex assemblies and of the dynamic pathways for defects formation and resorption. This provides a useful, generally applicable approach to unambiguously identify defects in these dynamic self-assembled materials and to classify them based on their structure, stability, and dynamics.
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Affiliation(s)
- Piero Gasparotto
- Laboratory of Computational Science and Modeling, Institute des Materiaux , Ecole polytechnique fédérale de Lausanne , CH-1015 Lausanne , Switzerland.,Thomas Young Centre and Department of Physics and Astronomy , University College London , Gower Street , London WC1E 6BT , United Kingdom
| | - Davide Bochicchio
- Department of Innovative Technologies , University of Applied Sciences and Arts of Southern Switzerland , Galleria 2, Via Cantonale 2c , CH-6928 Manno , Switzerland
| | - Michele Ceriotti
- Laboratory of Computational Science and Modeling, Institute des Materiaux , Ecole polytechnique fédérale de Lausanne , CH-1015 Lausanne , Switzerland
| | - Giovanni M Pavan
- Department of Innovative Technologies , University of Applied Sciences and Arts of Southern Switzerland , Galleria 2, Via Cantonale 2c , CH-6928 Manno , Switzerland.,Department of Applied Science and Technology , Politecnico di Torino , Corso Duca degli Abruzzi 24 , 10129 Torino , Italy
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39
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Feng Y, Wu J, Chi Q, Li W, Yu Y, Fei W. Defects and Aliovalent Doping Engineering in Electroceramics. Chem Rev 2020; 120:1710-1787. [DOI: 10.1021/acs.chemrev.9b00507] [Citation(s) in RCA: 88] [Impact Index Per Article: 22.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/07/2023]
Affiliation(s)
- Yu Feng
- Key Laboratory of Engineering Dielectrics and Its Application, Ministry of Education, Harbin University of Science and Technology, Harbin 150080, P. R. China
- State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001, P. R. China
- School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
| | - Jiagang Wu
- Department of Materials Science, Sichuan University, Chengdu 610064, P. R. China
| | - Qingguo Chi
- Key Laboratory of Engineering Dielectrics and Its Application, Ministry of Education, Harbin University of Science and Technology, Harbin 150080, P. R. China
| | - Weili Li
- State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001, P. R. China
| | - Yang Yu
- Key Laboratory of Engineering Dielectrics and Its Application, Ministry of Education, Harbin University of Science and Technology, Harbin 150080, P. R. China
| | - Weidong Fei
- State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001, P. R. China
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40
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Li L, Xie L, Pan X. Real-time studies of ferroelectric domain switching: a review. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2019; 82:126502. [PMID: 31185460 DOI: 10.1088/1361-6633/ab28de] [Citation(s) in RCA: 22] [Impact Index Per Article: 4.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Ferroelectric materials have been utilized in a broad range of electronic, optical, and electromechanical applications and hold the promise for the design of future high-density nonvolatile memories and multifunctional nano-devices. The applications of ferroelectric materials stem from the ability to switch polarized domains by applying an electric field, and therefore a fundamental understanding of the switching dynamics is critical for design of practical devices. In this review, we summarize the progress in the study of the microscopic process of ferroelectric domain switching using recently developed in situ transmission electron microscopy (TEM). We first briefly introduce the instrumentation, experimental procedures, imaging mechanisms, and analytical methods of the state-of-the-art in situ TEM techniques. The application of these techniques to studying a wide range of complex switching phenomena, including domain nucleation, domain wall motion, domain relaxation, domain-defect interaction, and the interplay between different types of domains, is demonstrated. The underlying physics of these dynamic processes are discussed.
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Affiliation(s)
- Linze Li
- Department of Materials Science and Engineering, University of California, Irvine, CA 92697, United States of America
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41
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Du K, Zhang M, Dai C, Zhou ZN, Xie YW, Ren ZH, Tian H, Chen LQ, Van Tendeloo G, Zhang Z. Manipulating topological transformations of polar structures through real-time observation of the dynamic polarization evolution. Nat Commun 2019; 10:4864. [PMID: 31653843 PMCID: PMC6814840 DOI: 10.1038/s41467-019-12864-5] [Citation(s) in RCA: 28] [Impact Index Per Article: 5.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/04/2019] [Accepted: 09/30/2019] [Indexed: 12/01/2022] Open
Abstract
Topological structures based on controllable ferroelectric or ferromagnetic domain configurations offer the opportunity to develop microelectronic devices such as high-density memories. Despite the increasing experimental and theoretical insights into various domain structures (such as polar spirals, polar wave, polar vortex) over the past decade, manipulating the topological transformations of polar structures and comprehensively understanding its underlying mechanism remains lacking. By conducting an in-situ non-contact bias technique, here we systematically investigate the real-time topological transformations of polar structures in PbTiO3/SrTiO3 multilayers at an atomic level. The procedure of vortex pair splitting and the transformation from polar vortex to polar wave and out-of-plane polarization are observed step by step. Furthermore, the redistribution of charge in various topological structures has been demonstrated under an external bias. This provides new insights for the symbiosis of polar and charge and offers an opportunity for a new generation of microelectronic devices. Direct observation of the dynamic evolution of polar domain structures at atomic level remains challenging. Here, the authors report the observation of real-time topological transformations of polar structures in PbTiO3/SrTiO3 multilayers.
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Affiliation(s)
- K Du
- Center of Electron Microscopy, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - M Zhang
- Department of Physics, Zhejiang University, Hangzhou, 310027, China
| | - C Dai
- Department of Materials Science and Engineering, Pennsylvania State University, State College, PA, 16802, USA
| | - Z N Zhou
- Center of Electron Microscopy, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Y W Xie
- Department of Physics, Zhejiang University, Hangzhou, 310027, China
| | - Z H Ren
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - H Tian
- Center of Electron Microscopy, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China. .,State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
| | - L Q Chen
- Department of Materials Science and Engineering, Pennsylvania State University, State College, PA, 16802, USA
| | - Gustaaf Van Tendeloo
- Electron Microscopy for Materials Science (EMAT), University of Antwerp, Groenenborgerlaan 171, B-2020, Antwerp, Belgium.,Nanostructure Research Centre (NRC) Wuhan University of Technology, Wuhan, 430070, China
| | - Z Zhang
- Center of Electron Microscopy, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China. .,State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
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42
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Wang Y, Zhang W. Mapping the strain distribution within embedded nanoparticles via geometrical phase analysis. Micron 2019; 125:102715. [DOI: 10.1016/j.micron.2019.102715] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/08/2019] [Revised: 07/12/2019] [Accepted: 07/13/2019] [Indexed: 11/16/2022]
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43
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Wen X, Xiang K, Zhu Y, Xiao L, Liao H, Chen X, Chen H. Nb 2O 5-Decorated Nitrogen-Doped Carbon Nanotube Microspheres for Highly Efficient Sulfur Confinement in Lithium–Sulfur Batteries. Ind Eng Chem Res 2019. [DOI: 10.1021/acs.iecr.9b00471] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/01/2023]
Affiliation(s)
- Xiaoyu Wen
- School of Metallurgy and Materials Engineering, Hunan University of Technology, Zhuzhou Hunan 412007, People’s Republic of China
| | - Kaixiong Xiang
- School of Metallurgy and Materials Engineering, Hunan University of Technology, Zhuzhou Hunan 412007, People’s Republic of China
| | - Yirong Zhu
- School of Metallurgy and Materials Engineering, Hunan University of Technology, Zhuzhou Hunan 412007, People’s Republic of China
| | - Li Xiao
- School of Metallurgy and Materials Engineering, Hunan University of Technology, Zhuzhou Hunan 412007, People’s Republic of China
| | - Haiyang Liao
- School of Metallurgy and Materials Engineering, Hunan University of Technology, Zhuzhou Hunan 412007, People’s Republic of China
| | - Xianhong Chen
- School of Metallurgy and Materials Engineering, Hunan University of Technology, Zhuzhou Hunan 412007, People’s Republic of China
| | - Han Chen
- School of Metallurgy and Materials Engineering, Hunan University of Technology, Zhuzhou Hunan 412007, People’s Republic of China
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44
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Lee TY, Lee K, Lim HH, Song MS, Yang SM, Yoo HK, Suh DI, Zhu Z, Yoon A, MacDonald MR, Lei X, Jeong HY, Lee D, Park K, Park J, Chae SC. Ferroelectric Polarization-Switching Dynamics and Wake-Up Effect in Si-Doped HfO 2. ACS APPLIED MATERIALS & INTERFACES 2019; 11:3142-3149. [PMID: 30592198 DOI: 10.1021/acsami.8b11681] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The ferroelectricity in ultrathin HfO2 offers a viable alternative to ferroelectric memory. A reliable switching behavior is required for commercial applications; however, many intriguing features of this material have not been resolved. Herein, we report an increase in the remnant polarization after electric field cycling, known as the "wake-up" effect, in terms of the change in the polarization-switching dynamics of a Si-doped HfO2 thin film. Compared with a pristine specimen, the Si-doped HfO2 thin film exhibited a partial increase in polarization after a finite number of ferroelectric switching behaviors. The polarization-switching behavior was analyzed using the nucleation-limited switching model characterized by a Lorentzian distribution of logarithmic domain-switching times. The polarization switching was simulated using the Monte Carlo method with respect to the effect of defects. Comparing the experimental results with the simulations revealed that the wake-up effect in the HfO2 thin film is accompanied by the suppression of disorder.
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Affiliation(s)
| | | | | | | | - Sang Mo Yang
- Department of Physics , Sookmyung Women's University , Seoul 04310 , Korea
| | | | - Dong Ik Suh
- SK Hynix Inc. , Icheon-si , Gyeonggi-do 17336 , Korea
| | - Zhongwei Zhu
- Lam Research Corp. , Fremont , California 94538 , United States
| | - Alexander Yoon
- Lam Research Corp. , Fremont , California 94538 , United States
| | | | - Xinjian Lei
- Versum Materials, Inc. , Carlsbad , California 92011 , United States
| | - Hu Young Jeong
- UNIST Central Research Facilities (UCRF) , Ulsan National Institute of Science and Technology (UNIST) , Ulsan 44919 , Korea
| | - Donghoon Lee
- Center for Nanoparticle Research , Institute for Basic Science (IBS) , Seoul 08826 , Korea
| | - Kunwoo Park
- Center for Nanoparticle Research , Institute for Basic Science (IBS) , Seoul 08826 , Korea
| | - Jungwon Park
- Center for Nanoparticle Research , Institute for Basic Science (IBS) , Seoul 08826 , Korea
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45
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Liu J, Jin L, Jiang Z, Liu L, Himanen L, Wei J, Zhang N, Wang D, Jia CL. Understanding doped perovskite ferroelectrics with defective dipole model. J Chem Phys 2018; 149:244122. [DOI: 10.1063/1.5051703] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
Affiliation(s)
- J. Liu
- State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China
| | - L. Jin
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, School of Electronic and Information Engineering, Xi’an Jiaotong University, Xi’an 710049, China
| | - Z. Jiang
- School of Microelectronics and State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China
| | - L. Liu
- College of Materials Science and Engineering, Guilin Univeristy of Technology, Guilin 541004, China
| | - L. Himanen
- Department of Applied Physics, Aalto University, Espoo 00076, Finland
| | - J. Wei
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, School of Electronic and Information Engineering, Xi’an Jiaotong University, Xi’an 710049, China
| | - N. Zhang
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, School of Electronic and Information Engineering, Xi’an Jiaotong University, Xi’an 710049, China
| | - D. Wang
- School of Microelectronics and State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China
| | - C.-L. Jia
- School of Microelectronics and State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China
- Peter Grünberg Institute and Ernst Ruska Center for Microscopy and Spectroscopy with Electrons, Research Center Jülich, D-52425 Jülich, Germany
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46
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Ma H, Yuan G, Wu T, Wang Y, Liu JM. Self-Organized Ferroelectric Domains Controlled by a Constant Bias from the Atomic Force Microscopy Tip. ACS APPLIED MATERIALS & INTERFACES 2018; 10:40911-40917. [PMID: 30394093 DOI: 10.1021/acsami.8b13982] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
The ferroelectric polarization switching along an external electric field is most important for the applications of ferroelectric memories and piezoelectric sensors and actuators; however, the depolarization commonly occurs randomly and cannot be controlled exactly until now. Here, a tip bias introduces the polarization switching and a ∼10 μm-scale domain in a triglycine sulfate crystal, and then the polarization backswitching as a special depolarization introduces a series of ordered granular domains along a line being parallel to the c axis and through the tip which divides the original domain to two similar parts. Such backswitching is controlled by the surface charge change as a result of the interplay among polarization charges, mobile H+ ions at the surface, and the strong crystal anisotropy. The self-organized ferroelectric domains offer us a new freedom to design novel ferroelectric or piezoelectric devices in future.
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Affiliation(s)
- He Ma
- School of Materials Science and Engineering , Nanjing University of Science and Technology , Nanjing 210094 , P. R. China
| | - Guoliang Yuan
- School of Materials Science and Engineering , Nanjing University of Science and Technology , Nanjing 210094 , P. R. China
| | - Tom Wu
- School of Materials Science and Engineering , University of New South Wales (UNSW) , Sydney , New South Wales 2052 , Australia
| | - Yaojin Wang
- School of Materials Science and Engineering , Nanjing University of Science and Technology , Nanjing 210094 , P. R. China
| | - Jun-Ming Liu
- National Laboratory of Solid State Microstructures Nanjing University , Nanjing 210093 , P. R. China
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47
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Klyukin K, Tao LL, Tsymbal EY, Alexandrov V. Defect-Assisted Tunneling Electroresistance in Ferroelectric Tunnel Junctions. PHYSICAL REVIEW LETTERS 2018; 121:056601. [PMID: 30118295 DOI: 10.1103/physrevlett.121.056601] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/31/2018] [Revised: 04/27/2018] [Indexed: 06/08/2023]
Abstract
Recent experimental results have demonstrated ferroelectricity in thin films of SrTiO_{3} induced by antisite Ti_{Sr} defects. This opens a possibility to use SrTiO_{3} as a barrier layer in ferroelectric tunnel junctions (FTJs)-emerging electronic devices promising for applications in nanoelectronics. Here using density functional theory combined with quantum-transport calculations applied to a prototypical Pt/SrTiO_{3}/Pt FTJ, we demonstrate that the localized in-gap energy states produced by the antisite Ti_{Sr} defects are responsible for the enhanced electron tunneling conductance which can be controlled by ferroelectric polarization. Our tight-binding modeling, which takes into account multiple defects, shows that the predicted defect-assisted tunneling electroresistance effect is greatly amplified when the defect energy levels are brought to the Fermi energy by one of the polarization states. Our results have implications for FTJs based on conventional ferroelectric barriers with defects and can be employed for the design of new types of FTJs with enhanced performance.
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Affiliation(s)
- Konstantin Klyukin
- Department of Chemical and Biomolecular Engineering, University of Nebraska, Lincoln, Nebraska 68588, USA
| | - L L Tao
- Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588, USA
| | - Evgeny Y Tsymbal
- Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588, USA
- Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588, USA
| | - Vitaly Alexandrov
- Department of Chemical and Biomolecular Engineering, University of Nebraska, Lincoln, Nebraska 68588, USA
- Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588, USA
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48
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Naden AB, O'Shea KJ, MacLaren DA. Evaluation of crystallographic strain, rotation and defects in functional oxides by the moiré effect in scanning transmission electron microscopy. NANOTECHNOLOGY 2018; 29:165704. [PMID: 29485106 DOI: 10.1088/1361-6528/aaae50] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/15/2023]
Abstract
Moiré patterns in scanning transmission electron microscopy (STEM) images of epitaxial perovskite oxides are used to assess strain and defect densities over fields of view extending over several hundred nanometers. The patterns arise from the geometric overlap of the rastered STEM electron beam and the samples' crystal periodicities and we explore the emergence and application of these moiré fringes for rapid strain analysis. Using the epitaxial functional oxide perovskites BiFeO3 and Pr1-x Ca x MnO3, we discuss the impact of large degrees of strain on the quantification of STEM moiré patterns, identify defects in the fringe patterns and quantify strain and lattice rotation. Such a wide-area analysis of crystallographic strain and defects is crucial for developing structure-function relations of functional oxides and we find the STEM moiré technique to be an attractive means of structural assessment that can be readily applied to low dose studies of damage sensitive crystalline materials.
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Affiliation(s)
- A B Naden
- School of Mathematics and Physics, Queen's University Belfast, Belfast, BT7 1NN, United Kingdom. SUPA, School of Physics and Astronomy, University of Glasgow, Glasgow, G12 8QQ, United Kingdom
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49
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Zhang Y, Xie L, Kim J, Stern A, Wang H, Zhang K, Yan X, Li L, Liu H, Zhao G, Chi H, Gadre C, Lin Q, Zhou Y, Uher C, Chen T, Chu YH, Xia J, Wu R, Pan X. Discovery of a magnetic conductive interface in PbZr 0.2Ti 0.8O 3 /SrTiO 3 heterostructures. Nat Commun 2018; 9:685. [PMID: 29449561 PMCID: PMC5814552 DOI: 10.1038/s41467-018-02914-9] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/26/2017] [Accepted: 01/06/2018] [Indexed: 11/09/2022] Open
Abstract
Emergent physical properties often arise at interfaces of complex oxide heterostructures due to the interplay between various degrees of freedom, especially those with polar discontinuities. It is desirable to explore if these structures may generate pure and controllable spin currents, which are needed to attain unmatched performance and energy efficiency in the next-generation spintronic devices. Here we report the emergence of a spin-polarized two-dimensional electron gas (SP-2DEG) at the interface of two insulators, SrTiO3 and PbZr0.2Ti0.8O3. This SP-2DEG is strongly localized at the interfacial Ti atoms, due to the interplay between Coulomb interaction and band bending, and can be tuned by the ferroelectric polarization. Our findings open a door for engineering ferroelectric/insulator interfaces to create tunable ferroic orders for magnetoelectric device applications and provide opportunities for designing multiferroic materials in heterostructures. Two-dimensional electron gases that form in some complex oxide heterostructures may have useful functional behavior due to the interaction of the parent materials. Here the authors show that PZT/STO interfaces can host a spin-polarized electron gas, even though the bulk materials are nonmagnetic.
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Affiliation(s)
- Yi Zhang
- Department of Chemical Engineering and Materials Science, University of California, Irvine, CA, 92697, USA
| | - Lin Xie
- National Laboratory of Solid State Microstructures and College of Engineering and Applied Sciences, Nanjing University, Nanjing, Jiangsu, 210093, China
| | - Jeongwoo Kim
- Department of Physics and Astronomy, University of California, Irvine, CA, 92697, USA
| | - Alex Stern
- Department of Physics and Astronomy, University of California, Irvine, CA, 92697, USA
| | - Hui Wang
- Department of Physics and Astronomy, University of California, Irvine, CA, 92697, USA
| | - Kui Zhang
- Department of Chemical Engineering and Materials Science, University of California, Irvine, CA, 92697, USA
| | - Xingxu Yan
- Department of Chemical Engineering and Materials Science, University of California, Irvine, CA, 92697, USA
| | - Linze Li
- Department of Chemical Engineering and Materials Science, University of California, Irvine, CA, 92697, USA
| | - Henry Liu
- Department of Materials Science and Engineering, National Chiao Tung University, HsinChu, 30010, Taiwan
| | - Gejian Zhao
- Department of Physics, Arizona State University, Tempe, Arizona, 85287, USA
| | - Hang Chi
- Department of Physics, University of Michigan, Ann Arbor, MI, 48109, USA
| | - Chaitanya Gadre
- Department of Physics and Astronomy, University of California, Irvine, CA, 92697, USA
| | - Qiyin Lin
- Irvine Materials Research Institute, University of California, Irvine, CA, 92697, USA
| | - Yichun Zhou
- School of Materials Science and Engineering, Xiangtan University, Xiangtan, 411105, Hunan, China
| | - Ctirad Uher
- Department of Physics, University of Michigan, Ann Arbor, MI, 48109, USA
| | - Tingyong Chen
- Department of Physics, Arizona State University, Tempe, Arizona, 85287, USA
| | - Ying-Hao Chu
- Department of Materials Science and Engineering, National Chiao Tung University, HsinChu, 30010, Taiwan
| | - Jing Xia
- Department of Physics and Astronomy, University of California, Irvine, CA, 92697, USA
| | - Ruqian Wu
- Department of Physics and Astronomy, University of California, Irvine, CA, 92697, USA
| | - Xiaoqing Pan
- Department of Chemical Engineering and Materials Science, University of California, Irvine, CA, 92697, USA. .,Department of Physics and Astronomy, University of California, Irvine, CA, 92697, USA.
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50
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Huang W, Fang YW, Yin Y, Tian B, Zhao W, Hou C, Ma C, Li Q, Tsymbal EY, Duan CG, Li X. Solid-State Synapse Based on Magnetoelectrically Coupled Memristor. ACS APPLIED MATERIALS & INTERFACES 2018; 10:5649-5656. [PMID: 29368507 DOI: 10.1021/acsami.7b18206] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
Brain-inspired computing architectures attempt to emulate the computations performed in the neurons and the synapses in the human brain. Memristors with continuously tunable resistances are ideal building blocks for artificial synapses. Through investigating the memristor behaviors in a La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 multiferroic tunnel junction, it was found that the ferroelectric domain dynamics characteristics are influenced by the relative magnetization alignment of the electrodes, and the interfacial spin polarization is manipulated continuously by ferroelectric domain reversal, enriching our understanding of the magnetoelectric coupling fundamentally. This creates a functionality that not only the resistance of the memristor but also the synaptic plasticity form can be further manipulated, as demonstrated by the spike-timing-dependent plasticity investigations. Density functional theory calculations are carried out to describe the obtained magnetoelectric coupling, which is probably related to the Mn-Ti intermixing at the interfaces. The multiple and controllable plasticity characteristic in a single artificial synapse, to resemble the synaptic morphological alteration property in a biological synapse, will be conducive to the development of artificial intelligence.
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Affiliation(s)
- Weichuan Huang
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Physics, University of Science and Technology of China , Hefei 230026, China
| | - Yue-Wen Fang
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University , Shanghai 200241, China
| | - Yuewei Yin
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Physics, University of Science and Technology of China , Hefei 230026, China
- Department of Physics and Astronomy, University of Nebraska , Lincoln, Nebraska 68588, United States
| | - Bobo Tian
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University , Shanghai 200241, China
| | - Wenbo Zhao
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Physics, University of Science and Technology of China , Hefei 230026, China
| | - Chuangming Hou
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Physics, University of Science and Technology of China , Hefei 230026, China
| | - Chao Ma
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Physics, University of Science and Technology of China , Hefei 230026, China
| | - Qi Li
- Department of Physics, Pennsylvania State University , University Park 16802, United States
| | - Evgeny Y Tsymbal
- Department of Physics and Astronomy, University of Nebraska , Lincoln, Nebraska 68588, United States
| | - Chun-Gang Duan
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University , Shanghai 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University , Shanxi 030006, China
| | - Xiaoguang Li
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Physics, University of Science and Technology of China , Hefei 230026, China
- Collaborative Innovation Center of Advanced Microstructures , Nanjing 210093, China
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