1
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Yu X, Dai Y, Lu Y, Liu C, Yan Y, Shen R, Yang Z, Feng L, Sun L, Liu Y, Lin S. High Efficient Solar Cell Based on Heterostructure Constructed by Graphene and GaAs Quantum Wells. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2204058. [PMID: 36394152 PMCID: PMC9839879 DOI: 10.1002/advs.202204058] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/15/2022] [Revised: 10/10/2022] [Indexed: 06/16/2023]
Abstract
Despite the fascinating optoelectronic properties of graphene, the power conversion efficiency (PCE) of graphene based solar cells remains to be lifted up. Herein, it is experimentally shown that the graphene/quantum wells/GaAs heterostructure solar cell can reach a PCE of 20.2% and an open-circuit voltage (Voc ) as high as 1.16 V at 90 K. The high efficiency is a result of carrier multiplication (CM) effect of graphene in the graphene/GaAs heterostructure. Especially, the external quantum efficiency (EQE) in the ultraviolet wavelength can be improved up to 72.2% based on the heterostructure constructed by graphene/In0.15 Ga0.85 As/GaAs0.75 P0.25 quantum wells/GaAs. The EQE increases as the light wavelength decreases, which indicates more carriers can be effectively excited by the higher energy photons through CM effect. Owing to these physical characters, the graphene/GaAs heterostructure solar cell will provide a possible way to exceed Shockley-Queisser (S-Q) limit.
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Affiliation(s)
- Xutao Yu
- College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Yue Dai
- College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Yanghua Lu
- College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Chang Liu
- College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Yanfei Yan
- College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Runjiang Shen
- College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Zunshan Yang
- College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Lixuan Feng
- College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Lijie Sun
- State Key Laboratory of Space Power Technology, Shanghai Institute of Space Power Sources, Shanghai, 200245, P. R. China
| | - Yong Liu
- State Key Laboratory of Space Power Technology, Shanghai Institute of Space Power Sources, Shanghai, 200245, P. R. China
| | - Shisheng Lin
- College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, P. R. China
- State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou, 310027, P. R. China
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2
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Cao B, Grass T, Gazzano O, Patel KA, Hu J, Müller M, Huber-Loyola T, Anzi L, Watanabe K, Taniguchi T, Newell DB, Gullans M, Sordan R, Hafezi M, Solomon GS. Chiral Transport of Hot Carriers in Graphene in the Quantum Hall Regime. ACS NANO 2022; 16:18200-18209. [PMID: 36326218 PMCID: PMC9706666 DOI: 10.1021/acsnano.2c05502] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/05/2022] [Accepted: 09/26/2022] [Indexed: 06/16/2023]
Abstract
Photocurrent (PC) measurements can reveal the relaxation dynamics of photoexcited hot carriers beyond the linear response of conventional transport experiments, a regime important for carrier multiplication. Here, we study the relaxation of carriers in graphene in the quantum Hall regime by accurately measuring the PC signal and modeling the data using optical Bloch equations. Our results lead to a unified understanding of the relaxation processes in graphene over different magnetic field strength regimes, which is governed by the interplay of Coulomb interactions and interactions with acoustic and optical phonons. Our data provide clear indications of a sizable carrier multiplication. Moreover, the oscillation pattern and the saturation behavior of PC are manifestations of not only the chiral transport properties of carriers in the quantum Hall regime but also the chirality change at the Dirac point, a characteristic feature of a relativistic quantum Hall effect.
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Affiliation(s)
- Bin Cao
- Joint
Quantum Institute, NIST/University of Maryland, College Park, Maryland20742, United States
| | - Tobias Grass
- Joint
Quantum Institute, NIST/University of Maryland, College Park, Maryland20742, United States
- ICFO-Institut
de Ciencies Fotoniques, The Barcelona Institute
of Science and Technology, Castelldefels
(Barcelona) 08860, Spain
- DIPC—Donostia
International Physics Center, San
Sebastian20018, Spain
- Ikerbasque—Basque Foundation for Science, Bilbao48013, Spain
| | - Olivier Gazzano
- Joint
Quantum Institute, NIST/University of Maryland, College Park, Maryland20742, United States
| | | | - Jiuning Hu
- National
Institute of Standards and Technology, Gaithersburg, Maryland20878, United States
| | - Markus Müller
- Joint
Quantum Institute, NIST/University of Maryland, College Park, Maryland20742, United States
| | - Tobias Huber-Loyola
- Joint
Quantum Institute, NIST/University of Maryland, College Park, Maryland20742, United States
| | - Luca Anzi
- L-NESS,
Department of Physics, Politecnico di Milano, Via Anzani 42, 22100Como, Italy
| | - Kenji Watanabe
- National
Institute for Materials Science, 1-1 Namiki, 305-0044Tsukuba, Japan
| | - Takashi Taniguchi
- National
Institute for Materials Science, 1-1 Namiki, 305-0044Tsukuba, Japan
| | - David B. Newell
- National
Institute of Standards and Technology, Gaithersburg, Maryland20878, United States
| | - Michael Gullans
- Joint
Center for Quantum Information and Computer Science, NIST/University of Maryland, College
Park, Maryland20742, United States
| | - Roman Sordan
- L-NESS,
Department of Physics, Politecnico di Milano, Via Anzani 42, 22100Como, Italy
| | - Mohammad Hafezi
- Joint
Quantum Institute, NIST/University of Maryland, College Park, Maryland20742, United States
- IREAP, University
of Maryland, College Park, Maryland20742, United States
| | - Glenn S. Solomon
- Joint
Quantum Institute, NIST/University of Maryland, College Park, Maryland20742, United States
- Department
of Physics and IPAS, University of Adelaide, Adelaide, South Australia5005, Australia
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3
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Pseudo-magnetic field-induced slow carrier dynamics in periodically strained graphene. Nat Commun 2021; 12:5087. [PMID: 34429419 PMCID: PMC8384878 DOI: 10.1038/s41467-021-25304-0] [Citation(s) in RCA: 15] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/08/2020] [Accepted: 07/19/2021] [Indexed: 11/21/2022] Open
Abstract
The creation of pseudo-magnetic fields in strained graphene has emerged as a promising route to investigate intriguing physical phenomena that would be unattainable with laboratory superconducting magnets. The giant pseudo-magnetic fields observed in highly deformed graphene can substantially alter the optical properties of graphene beyond a level that can be feasible with an external magnetic field, but the experimental signatures of the influence of such pseudo-magnetic fields have yet to be unveiled. Here, using time-resolved infrared pump-probe spectroscopy, we provide unambiguous evidence for slow carrier dynamics enabled by the pseudo-magnetic fields in periodically strained graphene. Strong pseudo-magnetic fields of ~100 T created by non-uniform strain in graphene on nanopillars are found to significantly decelerate the relaxation processes of hot carriers by more than an order of magnitude. Our findings offer alternative opportunities to harness the properties of graphene enabled by pseudo-magnetic fields for optoelectronics and condensed matter physics. The effect of strain-induced pseudo-magnetic fields on the optical properties of graphene has not been experimentally explored yet. Here, pseudo-magnetic fields reaching values of 100 T are shown to increase by more than an order of magnitude the relaxation lifetime of hot carriers in periodically strained graphene.
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4
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Fukushima S, Shimatani M, Okuda S, Ogawa S, Kanai Y, Ono T, Inoue K, Matsumoto K. Low dark current and high-responsivity graphene mid-infrared photodetectors using amplification of injected photo-carriers by photo-gating. OPTICS LETTERS 2019; 44:2598-2601. [PMID: 31090741 DOI: 10.1364/ol.44.002598] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/29/2019] [Accepted: 04/23/2019] [Indexed: 06/09/2023]
Abstract
Low dark current, high-responsivity middle-wavelength infrared (IR) graphene photodetectors using photo-gating amplification of injected photo-carriers are demonstrated. A graphene/p-indium antimonide (InSb) heterojunction and graphene/insulator region were formed. The injected photo-carriers from InSb to graphene were amplified by photo-gating induced in the graphene/tetraethyl orthosilicate (TEOS) region, resulting in the high responsivity and low dark current performance. A responsivity of 14.9 A/W and an ON/OFF ratio of 2.66×104 were achieved. The photoresponse is shown to be determined by the cross-sectional area between the graphene and the TEOS-SiO2, in which the injected photo-carriers into graphene were modulated and amplified by the photo-gating effect. Our results indicate that high-performance IR photodetectors based on the developed graphene photodetectors can be realized.
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5
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Barati F, Grossnickle M, Su S, Lake RK, Aji V, Gabor NM. Hot carrier-enhanced interlayer electron-hole pair multiplication in 2D semiconductor heterostructure photocells. NATURE NANOTECHNOLOGY 2017; 12:1134-1139. [PMID: 28991242 DOI: 10.1038/nnano.2017.203] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/10/2017] [Accepted: 08/31/2017] [Indexed: 05/28/2023]
Abstract
Strong electronic interactions can result in novel particle-antiparticle (electron-hole, e-h) pair generation effects, which may be exploited to enhance the photoresponse of nanoscale optoelectronic devices. Highly efficient e-h pair multiplication has been demonstrated in several important nanoscale systems, including nanocrystal quantum dots, carbon nanotubes and graphene. The small Fermi velocity and nonlocal nature of the effective dielectric screening in ultrathin layers of transition-metal dichalcogenides (TMDs) indicates that e-h interactions are very strong, so high-efficiency generation of e-h pairs from hot electrons is expected. However, such e-h pair multiplication has not been observed in 2D TMD devices. Here, we report the highly efficient multiplication of interlayer e-h pairs in 2D semiconductor heterostructure photocells. Electronic transport measurements of the interlayer I-VSD characteristics indicate that layer-indirect e-h pairs are generated by hot-electron impact excitation at temperatures near T = 300 K. By exploiting this highly efficient interlayer e-h pair multiplication process, we demonstrate near-infrared optoelectronic devices that exhibit 350% enhancement of the optoelectronic responsivity at microwatt power levels. Our findings, which demonstrate efficient carrier multiplication in TMD-based optoelectronic devices, make 2D semiconductor heterostructures viable for a new class of ultra-efficient photodetectors based on layer-indirect e-h excitations.
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Affiliation(s)
- Fatemeh Barati
- Department of Physics and Astronomy, University of California, Riverside, California 92521, USA
- Laboratory of Quantum Materials Optoelectronics, University of California, Riverside, California 92521, USA
- Center for Spins and Heat in Nanoscale Electronic Systems (SHINES), University of California, Riverside, California 92521, USA
| | - Max Grossnickle
- Department of Physics and Astronomy, University of California, Riverside, California 92521, USA
- Laboratory of Quantum Materials Optoelectronics, University of California, Riverside, California 92521, USA
- Center for Spins and Heat in Nanoscale Electronic Systems (SHINES), University of California, Riverside, California 92521, USA
| | - Shanshan Su
- Department of Physics and Astronomy, University of California, Riverside, California 92521, USA
- Center for Spins and Heat in Nanoscale Electronic Systems (SHINES), University of California, Riverside, California 92521, USA
- Laboratory for Terascale and Terahertz Electronics (LATTE), Department of Electrical and Computer Engineering, University of California - Riverside, Riverside, California 92521, USA
| | - Roger K Lake
- Department of Physics and Astronomy, University of California, Riverside, California 92521, USA
- Center for Spins and Heat in Nanoscale Electronic Systems (SHINES), University of California, Riverside, California 92521, USA
- Laboratory for Terascale and Terahertz Electronics (LATTE), Department of Electrical and Computer Engineering, University of California - Riverside, Riverside, California 92521, USA
| | - Vivek Aji
- Department of Physics and Astronomy, University of California, Riverside, California 92521, USA
| | - Nathaniel M Gabor
- Department of Physics and Astronomy, University of California, Riverside, California 92521, USA
- Laboratory of Quantum Materials Optoelectronics, University of California, Riverside, California 92521, USA
- Center for Spins and Heat in Nanoscale Electronic Systems (SHINES), University of California, Riverside, California 92521, USA
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6
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Wendler F, Mittendorff M, König-Otto JC, Brem S, Berger C, de Heer WA, Böttger R, Schneider H, Helm M, Winnerl S, Malic E. Symmetry-Breaking Supercollisions in Landau-Quantized Graphene. PHYSICAL REVIEW LETTERS 2017; 119:067405. [PMID: 28949645 DOI: 10.1103/physrevlett.119.067405] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/09/2017] [Indexed: 06/07/2023]
Abstract
Recent pump-probe experiments performed on graphene in a perpendicular magnetic field have revealed carrier relaxation times ranging from picoseconds to nanoseconds depending on the quality of the sample. To explain this surprising behavior, we propose a novel symmetry-breaking defect-assisted relaxation channel. This enables scattering of electrons with single out-of-plane phonons, which drastically accelerate the carrier scattering time in low-quality samples. The gained insights provide a strategy for tuning the carrier relaxation time in graphene and related materials by orders of magnitude.
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Affiliation(s)
- Florian Wendler
- Department of Theoretical Physics, Technical University Berlin, 10623 Berlin, Germany
| | - Martin Mittendorff
- Institute for Research in Electronics & Applied Physics, University of Maryland, College Park, Maryland 20742, USA
- Helmholtz-Zentrum Dresden-Rossendorf, PO Box 510119, D-01314 Dresden, Germany
| | - Jacob C König-Otto
- Helmholtz-Zentrum Dresden-Rossendorf, PO Box 510119, D-01314 Dresden, Germany
- Technische Universität Dresden, D-01062 Dresden, Germany
| | - Samuel Brem
- Department of Theoretical Physics, Technical University Berlin, 10623 Berlin, Germany
| | - Claire Berger
- Georgia Institute of Technology, Atlanta, Georgia 30332, USA
- Institut Néel, CNRS-Université Alpes, 38042 Grenoble, France
| | | | - Roman Böttger
- Helmholtz-Zentrum Dresden-Rossendorf, PO Box 510119, D-01314 Dresden, Germany
| | - Harald Schneider
- Helmholtz-Zentrum Dresden-Rossendorf, PO Box 510119, D-01314 Dresden, Germany
| | - Manfred Helm
- Helmholtz-Zentrum Dresden-Rossendorf, PO Box 510119, D-01314 Dresden, Germany
- Technische Universität Dresden, D-01062 Dresden, Germany
| | - Stephan Winnerl
- Helmholtz-Zentrum Dresden-Rossendorf, PO Box 510119, D-01314 Dresden, Germany
| | - Ermin Malic
- Department of Physics, Chalmers University of Technology, 41296 Gothenburg, Sweden
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7
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Winzer T, Mittendorff M, Winnerl S, Mittenzwey H, Jago R, Helm M, Malic E, Knorr A. Unconventional double-bended saturation of carrier occupation in optically excited graphene due to many-particle interactions. Nat Commun 2017; 8:15042. [PMID: 28485387 PMCID: PMC5436067 DOI: 10.1038/ncomms15042] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/27/2016] [Accepted: 02/24/2017] [Indexed: 11/08/2022] Open
Abstract
Saturation of carrier occupation in optically excited materials is a well-established phenomenon. However, so far, the observed saturation effects have always occurred in the strong-excitation regime and have been explained by Pauli blocking of the optically filled quantum states. On the basis of microscopic theory combined with ultrafast pump-probe experiments, we reveal a new low-intensity saturation regime in graphene that is purely based on many-particle scattering and not Pauli blocking. This results in an unconventional double-bended saturation behaviour: both bendings separately follow the standard saturation model exhibiting two saturation fluences; however, the corresponding fluences differ by three orders of magnitude and have different physical origin. Our results demonstrate that this new and unexpected behaviour can be ascribed to an interplay between time-dependent many-particle scattering and phase-space filling effects.
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Affiliation(s)
- Torben Winzer
- Institut für Theoretische Physik, Nichtlineare Optik und Quantenelektronik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany
| | - Martin Mittendorff
- Institute for Research in Electronics & Applied Physics, University of Maryland, College Park, Maryland 20742, USA
| | - Stephan Winnerl
- Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden, Germany
| | - Henry Mittenzwey
- Institut für Theoretische Physik, Nichtlineare Optik und Quantenelektronik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany
| | - Roland Jago
- Department of Physics, Chalmers University of Technology, SE-412 96 Gothenburg, Sweden
| | - Manfred Helm
- Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden, Germany
- Institut für Angewandte Physik, Technische Universität Dresden, D-01062 Dresden, Germany
| | - Ermin Malic
- Department of Physics, Chalmers University of Technology, SE-412 96 Gothenburg, Sweden
| | - Andreas Knorr
- Institut für Theoretische Physik, Nichtlineare Optik und Quantenelektronik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany
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8
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König-Otto JC, Wang Y, Belyanin A, Berger C, de Heer WA, Orlita M, Pashkin A, Schneider H, Helm M, Winnerl S. Four-Wave Mixing in Landau-Quantized Graphene. NANO LETTERS 2017; 17:2184-2188. [PMID: 28234493 DOI: 10.1021/acs.nanolett.6b04665] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
For Landau-quantized graphene, featuring an energy spectrum consisting of nonequidistant Landau levels, theory predicts a giant resonantly enhanced optical nonlinearity. We verify the nonlinearity in a time-integrated degenerate four-wave mixing (FWM) experiment in the mid-infrared spectral range, involving the Landau levels LL-1, LL0 and LL1. A rapid dephasing of the optically induced microscopic polarization on a time scale shorter than the pulse duration (∼4 ps) is observed, while a complementary pump-probe experiment under the same experimental conditions reveals a much longer lifetime of the induced population. The FWM signal shows the expected field dependence with respect to lowest order perturbation theory for low fields. Saturation sets in for fields above ∼6 kV/cm. Furthermore, the resonant behavior and the order of magnitude of the third-order susceptibility are in agreement with our theoretical calculations.
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Affiliation(s)
- Jacob C König-Otto
- Helmholtz-Zentrum Dresden-Rossendorf , P.O. Box 510119, 01314 Dresden, Germany
- Technische Universität Dresden , 01062 Dresden, Germany
| | - Yongrui Wang
- Texas A&M University , College Station, Texas 77843-4242, United States
| | - Alexey Belyanin
- Texas A&M University , College Station, Texas 77843-4242, United States
| | - Claire Berger
- Georgia Institute of Technology , Atlanta, Georgia 30332, United States
- Institut Néel, CNRS-Université Alpes , 38042 Grenoble, France
| | - Walter A de Heer
- Georgia Institute of Technology , Atlanta, Georgia 30332, United States
| | - Milan Orlita
- LNCMI, CNRS-UGA-UPS-INSA , 38042 Grenoble, France
- Institute of Physics, Charles University in Prague , 12116 Prague, Czech Republic
| | - Alexej Pashkin
- Helmholtz-Zentrum Dresden-Rossendorf , P.O. Box 510119, 01314 Dresden, Germany
| | - Harald Schneider
- Helmholtz-Zentrum Dresden-Rossendorf , P.O. Box 510119, 01314 Dresden, Germany
| | - Manfred Helm
- Helmholtz-Zentrum Dresden-Rossendorf , P.O. Box 510119, 01314 Dresden, Germany
- Technische Universität Dresden , 01062 Dresden, Germany
| | - Stephan Winnerl
- Helmholtz-Zentrum Dresden-Rossendorf , P.O. Box 510119, 01314 Dresden, Germany
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9
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Lee YK, Choi H, Lee H, Lee C, Choi JS, Choi CG, Hwang E, Park JY. Hot carrier multiplication on graphene/TiO2 Schottky nanodiodes. Sci Rep 2016; 6:27549. [PMID: 27271245 PMCID: PMC4897609 DOI: 10.1038/srep27549] [Citation(s) in RCA: 28] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/20/2016] [Accepted: 05/20/2016] [Indexed: 11/09/2022] Open
Abstract
Carrier multiplication (i.e. generation of multiple electron-hole pairs from a single high-energy electron, CM) in graphene has been extensively studied both theoretically and experimentally, but direct application of hot carrier multiplication in graphene has not been reported. Here, taking advantage of efficient CM in graphene, we fabricated graphene/TiO2 Schottky nanodiodes and found CM-driven enhancement of quantum efficiency. The unusual photocurrent behavior was observed and directly compared with Fowler's law for photoemission on metals. The Fowler's law exponent for the graphene-based nanodiode is almost twice that of a thin gold film based diode; the graphene-based nanodiode also has a weak dependence on light intensity-both are significant evidence for CM in graphene. Furthermore, doping in graphene significantly modifies the quantum efficiency by changing the Schottky barrier. The CM phenomenon observed on the graphene/TiO2 nanodiodes can lead to intriguing applications of viable graphene-based light harvesting.
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Affiliation(s)
- Young Keun Lee
- Center for Nanomaterials and Chemical Reactions, Institute for Basic Science (IBS), Daejeon 305-701, Korea.,Graduate School of EEWS, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701, Korea
| | - Hongkyw Choi
- Creative Research Center for Graphene Electronics, Electronics and Telecommunications Research Institute (ETRI), Gajeongno, Yuseong-gu, Daejeon, 305-700, Republic of Korea
| | - Hyunsoo Lee
- Center for Nanomaterials and Chemical Reactions, Institute for Basic Science (IBS), Daejeon 305-701, Korea.,Graduate School of EEWS, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701, Korea
| | - Changhwan Lee
- Center for Nanomaterials and Chemical Reactions, Institute for Basic Science (IBS), Daejeon 305-701, Korea.,Graduate School of EEWS, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701, Korea
| | - Jin Sik Choi
- Creative Research Center for Graphene Electronics, Electronics and Telecommunications Research Institute (ETRI), Gajeongno, Yuseong-gu, Daejeon, 305-700, Republic of Korea
| | - Choon-Gi Choi
- Creative Research Center for Graphene Electronics, Electronics and Telecommunications Research Institute (ETRI), Gajeongno, Yuseong-gu, Daejeon, 305-700, Republic of Korea
| | - Euyheon Hwang
- SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 440-746, Republic of Korea
| | - Jeong Young Park
- Center for Nanomaterials and Chemical Reactions, Institute for Basic Science (IBS), Daejeon 305-701, Korea.,Graduate School of EEWS, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701, Korea
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10
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Bruhn B, Limpens R, Chung NX, Schall P, Gregorkiewicz T. Spectroscopy of carrier multiplication in nanocrystals. Sci Rep 2016; 6:20538. [PMID: 26852922 PMCID: PMC4744935 DOI: 10.1038/srep20538] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/27/2015] [Accepted: 01/05/2016] [Indexed: 11/08/2022] Open
Abstract
Carrier multiplication in nanostructures promises great improvements in a number of widely used technologies, among others photodetectors and solar cells. The decade since its discovery was ridden with fierce discussions about its true existence, magnitude, and mechanism. Here, we introduce a novel, purely spectroscopic approach for investigation of carrier multiplication in nanocrystals. Applying this method to silicon nanocrystals in an oxide matrix, we obtain an unambiguous spectral signature of the carrier multiplication process and reveal details of its size-dependent characteristics-energy threshold and efficiency. The proposed method is generally applicable and suitable for both solid state and colloidal samples, as well as for a great variety of different materials.
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Affiliation(s)
- Benjamin Bruhn
- Van der Waals-Zeeman Institute, University of Amsterdam, Science Park 904, 1098 XH Amsterdam, The Netherlands
| | - Rens Limpens
- Van der Waals-Zeeman Institute, University of Amsterdam, Science Park 904, 1098 XH Amsterdam, The Netherlands
| | - Nguyen Xuan Chung
- Van der Waals-Zeeman Institute, University of Amsterdam, Science Park 904, 1098 XH Amsterdam, The Netherlands
| | - Peter Schall
- Van der Waals-Zeeman Institute, University of Amsterdam, Science Park 904, 1098 XH Amsterdam, The Netherlands
| | - Tom Gregorkiewicz
- Van der Waals-Zeeman Institute, University of Amsterdam, Science Park 904, 1098 XH Amsterdam, The Netherlands
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11
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Kadi F, Winzer T, Knorr A, Malic E. Impact of doping on the carrier dynamics in graphene. Sci Rep 2015; 5:16841. [PMID: 26577536 PMCID: PMC4649495 DOI: 10.1038/srep16841] [Citation(s) in RCA: 27] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/06/2015] [Accepted: 10/21/2015] [Indexed: 11/26/2022] Open
Abstract
We present a microscopic study on the impact of doping on the carrier dynamics in graphene, in particular focusing on its influence on the technologically relevant carrier multiplication in realistic, doped graphene samples. Treating the time- and momentum-resolved carrier-light, carrier-carrier, and carrier-phonon interactions on the same microscopic footing, the appearance of Auger-induced carrier multiplication up to a Fermi level of 300 meV is revealed. Furthermore, we show that doping favors the so-called hot carrier multiplication occurring within one band. Our results are directly compared to recent time-resolved ARPES measurements and exhibit an excellent agreement on the temporal evolution of the hot carrier multiplication for n- and p-doped graphene. The gained insights shed light on the ultrafast carrier dynamics in realistic, doped graphene samples.
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Affiliation(s)
- Faris Kadi
- Institut für Theoretische Physik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany
| | - Torben Winzer
- Institut für Theoretische Physik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany
| | - Andreas Knorr
- Institut für Theoretische Physik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany
| | - Ermin Malic
- Chalmers University of Technology, Department of Applied Physics, SE-412 96 Gothenburg, Sweden
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12
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Abstract
Terahertz (THz) technology has attracted enormous interest with conceivable applications ranging from basic science to advanced technology. One of the main challenges remains the realization of a well controlled and easily tunable THz source. Here, we predict the occurrence of a long-lived population inversion in Landau-quantized graphene (i.e. graphene in an external magnetic field) suggesting the design of tunable THz Landau level lasers. The unconventional non-equidistant quantization in graphene offers optimal conditions to overcome the counteracting Coulomb- and phonon-assisted scattering channels. In addition to the tunability of the laser frequency, we show that also the polarization of the emitted light can be controlled. Based on our microscopic insights into the underlying many-particle mechanisms, we propose two different experimentally realizable schemes to design tunable graphene-based THz Landau level lasers.
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Affiliation(s)
- Florian Wendler
- Chalmers University of Technology, Department of Applied Physics, SE-412 96 Göteborg, Sweden
| | - Ermin Malic
- Chalmers University of Technology, Department of Applied Physics, SE-412 96 Göteborg, Sweden
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13
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Winzer T, Ciesielski R, Handloser M, Comin A, Hartschuh A, Malic E. Microscopic view on the ultrafast photoluminescence from photoexcited graphene. NANO LETTERS 2015; 15:1141-1145. [PMID: 25616043 DOI: 10.1021/nl504176z] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
We present a joint theory-experiment study on ultrafast photoluminescence from photoexcited graphene. On the basis of a microscopic theory, we reveal two distinct mechanisms behind the occurring photoluminescence: besides the well-known incoherent contribution driven by nonequilibrium carrier occupations, we found a coherent part that spectrally shifts with the excitation energy. In our experiments, we demonstrate for the first time the predicted appearance and spectral shift of the coherent photoluminescence.
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Affiliation(s)
- Torben Winzer
- Institut für Theoretische Physik, Technische Universität Berlin , Hardenbergstraße 36, 10623 Berlin, Germany
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14
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Plötzing T, Winzer T, Malic E, Neumaier D, Knorr A, Kurz H. Experimental verification of carrier multiplication in graphene. NANO LETTERS 2014; 14:5371-5. [PMID: 25144320 DOI: 10.1021/nl502114w] [Citation(s) in RCA: 20] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
We report on the first direct experimental observation of carrier multiplication in graphene reaching a multiplication factor of up to 2 and persisting on a picoseconds time scale. Exploiting multicolor pump-probe measurement techniques, the excited nonequilibrium carrier distribution is retrieved on an ultrafast time scale. This provides access to the temporal evolution of the optically excited carrier density and thus allows quantitative conclusions on possible carrier multiplication. Microscopic time- and momentum-resolved calculations on the ultrafast relaxation dynamics of optically excited carriers confirm the observation of carrier multiplication under corresponding experimental conditions, suggesting graphene as a promising material for novel high-efficiency photodetection devices.
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Affiliation(s)
- T Plötzing
- Institute of Semiconductor Electronics, RWTH Aachen University , Sommerfeldstrasse 24, 52074 Aachen, Germany
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15
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Kadi F, Winzer T, Malic E, Knorr A, Göttfert F, Mittendorff M, Winnerl S, Helm M. Microscopic description of intraband absorption in graphene: the occurrence of transient negative differential transmission. PHYSICAL REVIEW LETTERS 2014; 113:035502. [PMID: 25083654 DOI: 10.1103/physrevlett.113.035502] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/04/2014] [Indexed: 05/23/2023]
Abstract
We present a microscopic explanation of the controversially discussed transient negative differential transmission observed in degenerate optical pump-probe measurements in graphene. Our approach is based on the density matrix formalism allowing a time- and momentum-resolved study of carrier-light, carrier-carrier, and carrier-phonon interaction on microscopic footing. We show that phonon-assisted optical intraband transitions give rise to transient absorption in the optically excited hot carrier system counteracting pure absorption bleaching of interband transitions. While interband transition bleaching is relevant in the first hundreds of fs after the excitation, intraband absorption sets in at later times. In particular, in the low excitation regime, these intraband absorption processes prevail over the absorption bleaching resulting in a zero crossing of the differential transmission. Our findings are in good qualitative agreement with recent experimental pump-probe studies.
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Affiliation(s)
- Faris Kadi
- Institut für Theoretische Physik, Nichtlineare Optik und Quantenelektronik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany
| | - Torben Winzer
- Institut für Theoretische Physik, Nichtlineare Optik und Quantenelektronik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany and Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, Korea
| | - Ermin Malic
- Institut für Theoretische Physik, Nichtlineare Optik und Quantenelektronik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany
| | - Andreas Knorr
- Institut für Theoretische Physik, Nichtlineare Optik und Quantenelektronik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany
| | - F Göttfert
- Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, D-01314 Dresden, Germany
| | - M Mittendorff
- Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, D-01314 Dresden, Germany and Technische Universität Dresden, 01062 Dresden, Germany
| | - S Winnerl
- Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, D-01314 Dresden, Germany
| | - M Helm
- Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, D-01314 Dresden, Germany and Technische Universität Dresden, 01062 Dresden, Germany
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