High-Tc superconductivity in ultrathin Bi2Sr2CaCu2O8+x down to half-unit-cell thickness by protection with graphene

Vortex entropy and superconducting fluctuations in ultrathin underdoped Bi2Sr2CaCu2O8+x superconductor

Vortices in superconductors can help identify emergent phenomena but certain fundamental aspects of vortices, such as their entropy, remain poorly understood. Here, we study the vortex entropy in underdoped Bi2Sr2CaCu2O8+x by measuring both magneto-resistivity and Nernst effect on ultrathin flakes (≤2 unit-cell). We extract the London penetration depth from the magneto-transport measurements on samples with different doping levels. It reveals that the superfluid phase stiffness ρs scales linearly with the superconducting transition temperature Tc, down to the extremely underdoped case. On the same batch of ultrathin flakes, we measure the Nernst effect via on-chip thermometry. Together, we obtain the vortex entropy and find that it decays exponentially with Tc or ρs. We further analyze the Nernst signal above Tc in the framework of Gaussian superconducting fluctuations. The combination of electrical and thermoelectric measurements in the two-dimensional limit provides fresh insight into high temperature superconductivity.

Pick-up and assembling of chemically sensitive van der Waals heterostructures using dry cryogenic exfoliation

Assembling atomic layers of van der Waals materials (vdW) combines the physics of two materials, offering opportunities for novel functional devices. Realization of this has been possible because of advancements in nanofabrication processes which often involve chemical processing of the materials under study; this can be detrimental to device performance. To address this issue, we have developed a modified micro-manipulator setup for cryogenic exfoliation, pick up, and transfer of vdW materials to assemble heterostructures. We use the glass transition of a polymer PDMS to cleave a flake into two, followed by its pick-up and drop to form pristine twisted junctions. To demonstrate the potential of the technique, we fabricated twisted heterostructure of Bi2Sr2CaCu2O8+x (BSCCO), a van der Waals high-temperature cuprate superconductor. We also employed this method to re-exfoliate NbSe2 and make twisted heterostructure. Transport measurements of the fabricated devices indicate the high quality of the artificial twisted interface. In addition, we extend this cryogenic exfoliation method for other vdW materials, offering an effective way of assembling heterostructures and twisted junctions with pristine interfaces.

Oscillating paramagnetic Meissner effect and Berezinskii-Kosterlitz-Thouless transition in underdoped Bi2Sr2CaCu2O8+δ

Superconducting phase transitions in two dimensions lie beyond the description of the Ginzburg-Landau symmetry-breaking paradigm for three-dimensional superconductors. They are Berezinskii-Kosterlitz-Thouless (BKT) transitions of paired-electron condensate driven by the unbinding of topological excitations, i.e. vortices. The recently discovered monolayers of layered high-transition-temperature ([Formula: see text]) cuprate superconductor Bi2Sr2CaCu2O8+δ (Bi2212) meant that this 2D superconductor promised to be ideal for the study of unconventional superconductivity. But inhomogeneity posed challenges for distinguishing BKT physics from charge correlations in this material. Here, we utilize the phase sensitivity of scanning superconducting quantum interference device microscopy susceptometry to image the local magnetic response of underdoped Bi2212 from the monolayer to the bulk throughout its phase transition. The monolayer segregates into domains with independent phases at elevated temperatures below [Formula: see text]. Within a single domain, we find that the susceptibility oscillates with flux between diamagnetism and paramagnetism in a Fraunhofer-like pattern up to [Formula: see text]. The finite modulation period, as well as the broadening of the peaks when approaching [Formula: see text] from below, suggests well-defined vortices that are increasingly screened by the dissociation of vortex-antivortex plasma through a BKT transition. In the multilayers, the susceptibility oscillation differs in a small temperature regime below [Formula: see text], consistent with a dimensional crossover led by interlayer coupling. Serving as strong evidence for BKT transition in the bulk, we observe a sharp jump in phase stiffness and paramagnetism at small fields just below [Formula: see text]. These results unify the superconducting phase transitions from the monolayer to the bulk underdoped Bi2212, and can be collectively referred to as the BKT transition with interlayer coupling.

Optically Probing Unconventional Superconductivity in Atomically Thin Bi2Sr2Ca0.92Y0.08Cu2O8+δ

Atomically thin cuprates exhibiting a superconducting phase transition temperature similar to that of the bulk have recently been realized, although the device fabrication remains a challenge and limits the potential for many novel studies and applications. Here, we use an optical pump-probe approach to noninvasively study the unconventional superconductivity in atomically thin Bi2Sr2Ca0.92Y0.08Cu2O8+δ (Y-Bi2212). Apart from finding an optical response due to the superconducting phase transition that is similar to that of bulk Y-Bi2212, we observe that the sign and amplitude of the pump-probe signal in atomically thin flakes vary significantly in different dielectric environments depending on the nature of the optical excitation. By exploiting the spatial resolution of the optical probe, we uncover the exceptional sensitivity of monolayer Y-Bi2212 to the environment. Our results provide the first optical evidence for the intralayer nature of the superconducting condensate in Bi2212 and highlight the role of double-sided encapsulation in preserving superconductivity in atomically thin cuprates.

Phase Engineering of 2D Materials

Polymorphic 2D materials allow structural and electronic phase engineering, which can be used to realize energy-efficient, cost-effective, and scalable device applications. The phase engineering covers not only conventional structural and metal-insulator transitions but also magnetic states, strongly correlated band structures, and topological phases in rich 2D materials. The methods used for the local phase engineering of 2D materials include various optical, geometrical, and chemical processes as well as traditional thermodynamic approaches. In this Review, we survey the precise manipulation of local phases and phase patterning of 2D materials, particularly with ideal and versatile phase interfaces for electronic and energy device applications. Polymorphic 2D materials and diverse quantum materials with their layered, vertical, and lateral geometries are discussed with an emphasis on the role and use of their phase interfaces. Various phase interfaces have demonstrated superior and unique performance in electronic and energy devices. The phase patterning leads to novel homo- and heterojunction structures of 2D materials with low-dimensional phase boundaries, which highlights their potential for technological breakthroughs in future electronic, quantum, and energy devices. Accordingly, we encourage researchers to investigate and exploit phase patterning in emerging 2D materials.

Polaritonic Probe of an Emergent 2D Dipole Interface

The use of work-function-mediated charge transfer has recently emerged as a reliable route toward nanoscale electrostatic control of individual atomic layers. Using α-RuCl3 as a 2D electron acceptor, we are able to induce emergent nano-optical behavior in hexagonal boron nitride (hBN) that arises due to interlayer charge polarization. Using scattering-type scanning near-field optical microscopy (s-SNOM), we find that a thin layer of α-RuCl3 adjacent to an hBN slab reduces the propagation length of hBN phonon polaritons (PhPs) in significant excess of what can be attributed to intrinsic optical losses. Concomitant nano-optical spectroscopy experiments reveal a novel resonance that aligns energetically with the region of excess PhP losses. These experimental observations are elucidated by first-principles density-functional theory and near-field model calculations, which show that the formation of a large interfacial dipole suppresses out-of-plane PhP propagation. Our results demonstrate the potential utility of charge-transfer heterostructures for tailoring optoelectronic properties of 2D insulators.

Prominent Josephson tunneling between twisted single copper oxide planes of Bi2Sr2-xLaxCuO6+y

Josephson tunneling in twisted cuprate junctions provides a litmus test for the pairing symmetry, which is fundamental for understanding the microscopic mechanism of high temperature superconductivity. This issue is rekindled by experimental advances in van der Waals stacking and the proposal of an emergent d+id-wave. So far, all experiments have been carried out on Bi2Sr2CaCu2O8+x (Bi-2212) with double CuO2 planes but show controversial results. Here, we investigate junctions made of Bi2Sr2-xLaxCuO6+y (Bi-2201) with single CuO2 planes. Our on-site cold stacking technique ensures uncompromised crystalline quality and stoichiometry at the interface. Junctions with carefully calibrated twist angles around 45° show strong Josephson tunneling and conventional temperature dependence. Furthermore, we observe standard Fraunhofer diffraction patterns and integer Fiske steps in a junction with a twist angle of 45.0±0.2°. Together, these results pose strong constraints on the d or d+id-wave pairing and suggest an indispensable isotropic pairing component.

Growth and Electronic Structure of Copper Oxide Monolayer Epitaxial Films

Copper-based high-temperature superconductors share a common feature in their crystal structure, which is the presence of a CuO2 plane, where superconductivity takes place. Therefore, important questions arise as to whether superconductivity can exist in a single layer of the CuO2 plane and, if so, how such superconductivity in a single CuO2 plane differs from that in a bulk cuprate system. To answer these questions, studies of the superconductivity in cuprate monolayers are necessary. In this study, we constructed a heterostructure system with a La2-xSrxCuO4 (LSCO) monolayer containing a single CuO2 plane and measured the resulting electronic structures. Monolayer LSCO has metallic and bulk-like electronic structures. The hole doping ratio of the monolayer LSCO is found to depend on the underlying buffer layer due to the interface effect. Our work will provide a platform for research into ideal two-dimensional cuprate systems.

Precise Construction and Growth of Submillimeter Two-Dimensional WSe2 and MoSe2 Monolayers

Currently, as shown by large-scale research on two-dimensional materials in the field of nanoelectronics and catalysis, the construction of large-area two-dimensional materials is crucial for the development of devices and their application in photovoltaics, sensing, optoelectronics, and energy generation/storage. Here, using atmospheric-pressure chemical vapor deposition, we developed a method to regulate growth conditions according to the growth mechanism for WSe₂ and MoSe₂ materials. By accurately controlling the hydrogen flux within the range of 1 sccm and the distance between the precursor and the substrate, we obtained large-size films of single atomic layers with thicknesses of only about 1 nm. When growing the samples, we could not only obtain a 100 percent proportion of samples with the same shape, but the samples could also be glued into pieces of 700 μm and above in size, changing the shape and making it possible to reach the millimeter/submillimeter level visible to the naked eye. Our method is an effective method for the growth of large-area films with universal applicability.

Emerging 2D Metal Oxides: From Synthesis to Device Integration

2D metal oxides have aroused increasing attention in the field of electronics and optoelectronics due to their intriguing physical properties. In this review, an overview of recent advances on synthesis of 2D metal oxides and their electronic applications is presented. First, the tunable physical properties of 2D metal oxides that relate to the structure (various oxidation-state forms, polymorphism, etc.), crystallinity and defects (anisotropy, point defects, and grain boundary), and thickness (quantum confinement effect, interfacial effect, etc.) are discussed. Then, advanced synthesis methods for 2D metal oxides besides mechanical exfoliation are introduced and classified into solution process, vapor-phase deposition, and native oxidation on a metal source. Later, the various roles of 2D metal oxides in widespread applications, i.e., transistors, inverters, photodetectors, piezotronics, memristors, and potential applications (solar cell, spintronics, and superconducting devices) are discussed. Finally, an outlook of existing challenges and future opportunities in 2D metal oxides is proposed.

Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications

The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next generation electronics, optoelectronics, electrochemical energy storage devices, and chemical sensing devices. Despite many proof-of-concept demonstrations so far, the full potential of anisotropic chalcogenides has yet to be investigated. This article provides a comprehensive overview of the recent progress made in the synthesis, mechanistic understanding, property modulation strategies, and applications of the anisotropic chalcogenides. It begins with an introduction to the basic crystal structures, and then the unique physical and chemical properties of 1D and 2D MCs. Controlled synthetic routes for anisotropic MC crystals are summarized with example advances in the solution-phase synthesis, vapor-phase synthesis, and exfoliation. Several important approaches to modulate dimensions, phases, compositions, defects, and heterostructures of anisotropic MCs are discussed. Recent significant advances in applications are highlighted for electronics, optoelectronic devices, catalysts, batteries, supercapacitors, sensing platforms, and thermoelectric devices. The article ends with prospects for future opportunities and challenges to be addressed in the academic research and practical engineering of anisotropic MCs.

A Scenario for the Critical Fluctuations near the Transition of Few-Bilayer Films of High-Temperature Cuprate Superconductors

We study the critical fluctuations near the resistive transition of very thin films of high-temperature cuprate superconductors composed of a number N of only a few unit cells of superconducting bilayers. For that, we solve the fluctuation spectrum of a Gaussian-Ginzburg-Landau model for few-bilayers superconductors considering two alternating Josephson interlayer interaction strengths, and we obtain the corresponding paraconductivity above the transition. Then, we extend these calculations to temperatures below the transition through expressions for the Ginzburg number and Kosterlitz-Thouless-like critical region. When compared with previously available data in YBa2Cu3O7-δ few-bilayers systems, with N = 1 to 4, our results seem to provide a plausible scenario for their critical regime.

Nanowire bolometer using a 2D high-temperature superconductor

Superconducting nanowires are very important due to their applications ranging from quantum technology to astronomy. In this work, we implement a non-invasive process to fabricate nanowires of high-T_csuperconductor Bi₂Sr₂CaCu₂O_8+δ. We demonstrate that our nanowires can be used as bolometers in the visible range with very high responsivity of 9.7 × 10³V W^-1. Interestingly, in a long (30μm) nanowire of 9 nm thickness and 700 nm width, we observe bias current-dependent localized spots of maximum photovoltage. Moreover, the scalability of the bolometer responsivity with the normal state resistance of the nanowire could allow further performance improvement by increasing the nanowire length in a meander geometry. We observe phase slip events in nanowires with small cross-sections (12 nm thick, 300 nm wide, and 3μm long) at low temperatures. Our study presents a scalable method for realizing sensitive bolometers working near the liquid-nitrogen temperature.

Manipulating high-temperature superconductivity by oxygen doping in Bi2Sr2CaCu2O8+δ thin flakes

Harnessing the fascinating properties of correlated oxides requires precise control of their carrier density. Compared to other methods, oxygen doping provides an effective and more direct way to tune the electronic properties of correlated oxides. Although several approaches, such as thermal annealing and oxygen migration, have been introduced to change the oxygen content, a continuous and reversible solution that can be integrated with modern electronic technology is much in demand. Here, we report a novel ionic field-effect transistor using solid Gd-doped CeO2 as the gate dielectric, which shows a remarkable carrier-density-tuning ability via electric-field-controlled oxygen concentration at room temperature. In Bi2Sr2CaCu2O8+δ (Bi-2212) thin flakes, we achieve a reversible superconductor-insulator transition by driving oxygen ions in and out of the samples with electric fields, and map out the phase diagram all the way from the insulating regime to the over-doped superconducting regime by continuously changing the oxygen doping level. Scaling analysis indicates that the reversible superconductor-insulator transition for the Bi-2212 thin flakes follows the theoretical description of a two-dimensional quantum phase transition. Our work provides a route for realizing electric-field control of phase transition in correlated oxides. Moreover, the configuration of this type of transistor makes heterostructure/interface engineering possible, thus having the potential to serve as the next-generation all-solid-state field-effect transistor.

Artificial Neuron Networks Enabled Identification and Characterizations of 2D Materials and van der Waals Heterostructures

Two-dimensional (2D) materials and their in-plane and out-of-plane (i.e., van der Waals, vdW) heterostructures are promising building blocks for next-generation electronic and optoelectronic devices. Since the performance of the devices is strongly dependent on the crystalline quality of the materials and the interface characteristics of the heterostructures, a fast and nondestructive method for distinguishing and characterizing various 2D building blocks is desirable to promote the device integrations. In this work, based on the color space information on 2D materials' optical microscopy images, an artificial neural network-based deep learning algorithm is developed and applied to identify eight kinds of 2D materials with accuracy well above 90% and a mean value of 96%. More importantly, this data-driven method enables two interesting functionalities: (1) resolving the interface distribution of chemical vapor deposition (CVD) grown in-plane and vdW heterostructures and (2) identifying defect concentrations of CVD-grown 2D semiconductors. The two functionalities can be utilized to quickly identify sample quality and optimize synthesis parameters in the future. Our work improves the characterization efficiency of atomically thin materials and is therefore valuable for their research and applications.

Emerging Single-Photon Detectors Based on Low-Dimensional Materials

Single-photon detectors (SPDs) that can sense individual photons are the most sensitive instruments for photodetection. Established SPDs such as conventional silicon or III-V compound semiconductor avalanche diodes and photomultiplier tubes have been used in a wide range of time-correlated photon-counting applications, including quantum information technologies, in vivo biomedical imaging, time-of-flight 3D scanners, and deep-space optical communications. However, further development of these fields requires more sophisticated detectors with high detection efficiency, fast response, and photon-number-resolving ability, etc. Thereby, significant efforts have been made to improve the performance of conventional SPDs and to develop new photon-counting technologies. In this review, the working mechanisms and key performance metrics of conventional SPDs are first summarized. Then emerging photon-counting detectors (in the visible to infrared range) based on 0D quantum dots, 1D quantum nanowires, and 2D layered materials are discussed. These low-dimensional materials exhibit many exotic properties due to the quantum confinement effect. And photodetectors built from these nD-materials (n = 0, 1, 2) can potentially be used for ultra-weak light detection. By reviewing the status and discussing the challenges faced by SPDs, this review aims to provide future perspectives on the research directions of emerging photon-counting technologies.

Indium-contacted van der Waals gap tunneling spectroscopy for van der Waals layered materials

The electrical phase transition in van der Waals (vdW) layered materials such as transition-metal dichalcogenides and Bi₂Sr₂CaCu₂O_8+x (Bi-2212) high-temperature superconductor has been explored using various techniques, including scanning tunneling and photoemission spectroscopies, and measurements of electrical resistance as a function of temperature. In this study, we develop one useful method to elucidate the electrical phases in vdW layered materials: indium (In)-contacted vdW tunneling spectroscopy for 1T-TaS₂, Bi-2212 and 2H-MoS₂. We utilized the vdW gap formed at an In/vdW material interface as a tunnel barrier for tunneling spectroscopy. For strongly correlated electron systems such as 1T-TaS₂ and Bi-2212, pronounced gap features corresponding to the Mott and superconducting gaps were respectively observed at T = 4 K. We observed a gate dependence of the amplitude of the superconducting gap, which has potential applications in a gate-tunable superconducting device with a SiO₂/Si substrate. For In/10 nm-thick 2H-MoS₂ devices, differential conductance shoulders at bias voltages of approximately ± 0.45 V were observed, which were attributed to the semiconducting gap. These results show that In-contacted vdW gap tunneling spectroscopy in a fashion of field-effect transistor provides feasible and reliable ways to investigate electronic structures of vdW materials.

Recent Advances in 2D Superconductors

The emergence of superconductivity in 2D materials has attracted much attention and there has been rapid development in recent years because of their fruitful physical properties, such as high transition temperature (T_c ), continuous phase transition, and enhanced parallel critical magnetic field (B_c ). Tremendous efforts have been devoted to exploring different physical parameters to figure out the mechanisms behind the unexpected superconductivity phenomena, including adjusting the thickness of samples, fabricating various heterostructures, tuning the carrier density by electric field and chemical doping, and so on. Here, different types of 2D superconductivity with their unique characteristics are introduced, including the conventional Bardeen-Cooper-Schrieffer superconductivity in ultrathin films, high-T_c superconductivity in Fe-based and Cu-based 2D superconductors, unconventional superconductivity in newly discovered twist-angle bilayer graphene, superconductivity with enhanced B_c , and topological superconductivity. A perspective toward this field is then proposed based on academic knowledge from the recently reported literature. The aim is to provide researchers with a clear and comprehensive understanding about the newly developed 2D superconductivity and promote the development of this field much further.

Atomically Thin Superconductors

In recent years, atomically thin superconductors, including atomically thin elemental superconductors, single layer FeSe films, and few-layer cuprate superconductors, have been studied extensively. This hot research field is mainly driven by the discovery of significant superconductivity enhancement and high-temperature interface superconductivity in single-layer FeSe films epitaxially grown on SrTiO₃ substrates in 2012. This study has attracted tremendous research interest and generated more studies focusing on further enhancing superconductivity and finding the origin of the superconductivity. A few years later, research on atomically thin superconductors has extended to cuprate superconductors, unveiling many intriguing properties that have neither been proposed or observed previously. These new discoveries challenge the current theory regarding the superconducting mechanism of unconventional superconductors and indicate new directions on how to achieve high-transition-temperature superconductors. Herein, this exciting recent progress is briefly discussed, with a focus on the recent progress in identifying new atomically thin superconductors.

On-Demand Local Modification of High-Tc Superconductivity in Few Unit-Cell Thick Bi2 Sr2 CaCu2 O8+δ

High-temperature superconductors (HTSs) are important for potential applications and for understanding the origin of strong correlations. Bi₂ Sr₂ CaCu₂ O_8+δ (BSCCO), a van der Waals material, offers a platform to probe the physics down to a unit-cell. Guiding the flow of electrons by patterning 2DEGS and oxide heterostructures has brought new functionality and access to new science. Similarly, modifying superconductivity in HTS locally, on a small length scale, is of immense interest for superconducting electronics. A route to modify superconductivity locally by depositing metal on the surface is reported here by transport studies on few unit-cell thick BSCCO. Deposition of chromium (Cr) on the surface over a selected area of BSCCO results in insulating behavior of the underlying region. Cr locally depletes oxygen in CuO₂ planes and disrupts the superconductivity in the layers below. This technique of modifying superconductivity is suitable for making sub-micrometer superconducting wires and more complex superconducting devices.

On-Chip Sensing of Hotspots in Superconducting Terahertz Emitters

Intrinsic Josephson junctions in high-temperature superconductor Bi₂Sr₂CaCu₂O_8+δ (BSCCO) are known for their capability to emit high-power terahertz photons with widely tunable frequencies. Hotspots, as inhomogeneous temperature distributions across the junctions, are believed to play a critical role in synchronizing the gauge-invariant phase difference among the junctions, so as to achieve coherent strong emission. In this paper, we demonstrate an on-chip in situ sensing technique that can characterize hotspot distributions on BSCCO. This is achieved by fabricating a series of micro-nanosized "sensor" junctions on top of an "emitter" junction and measuring the critical current on the sensors versus the bias current applied to the emitter. This fully electronic on-chip design can enable efficient close-loop control of hotspots in BSCCO junctions and significantly enhance the functionality of superconducting terahertz emitters.

Universal mechanical exfoliation of large-area 2D crystals

Two-dimensional materials provide extraordinary opportunities for exploring phenomena arising in atomically thin crystals. Beginning with the first isolation of graphene, mechanical exfoliation has been a key to provide high-quality two-dimensional materials, but despite improvements it is still limited in yield, lateral size and contamination. Here we introduce a contamination-free, one-step and universal Au-assisted mechanical exfoliation method and demonstrate its effectiveness by isolating 40 types of single-crystalline monolayers, including elemental two-dimensional crystals, metal-dichalcogenides, magnets and superconductors. Most of them are of millimeter-size and high-quality, as shown by transfer-free measurements of electron microscopy, photo spectroscopies and electrical transport. Large suspended two-dimensional crystals and heterojunctions were also prepared with high-yield. Enhanced adhesion between the crystals and the substrates enables such efficient exfoliation, for which we identify a gold-assisted exfoliation method that underpins a universal route for producing large-area monolayers and thus supports studies of fundamental properties and potential application of two-dimensional materials.

Structural, Electronic and Magnetic Properties of a Few Nanometer-Thick Superconducting NdBa2Cu3O7 Films

Epitaxial films of high critical temperature (Tc) cuprate superconductors preserve their transport properties even when their thickness is reduced to a few nanometers. However, when approaching the single crystalline unit cell (u.c.) of thickness, Tc decreases and eventually, superconductivity is lost. Strain originating from the mismatch with the substrate, electronic reconstruction at the interface and alteration of the chemical composition and of doping can be the cause of such changes. Here, we use resonant inelastic x-ray scattering at the Cu L3 edge to study the crystal field and spin excitations of NdBa2Cu3O7−x ultrathin films grown on SrTiO3, comparing 1, 2 and 80 u.c.-thick samples. We find that even at extremely low thicknesses, the strength of the in-plane superexchange interaction is mostly preserved, with just a slight decrease in the 1 u.c. with respect to the 80 u.c.-thick sample. We also observe spectroscopic signatures for a decrease of the hole-doping at low thickness, consistent with the expansion of the c-axis lattice parameter and oxygen deficiency in the chains of the first unit cell, determined by high-resolution transmission microscopy and x-ray diffraction.

High-temperature superconductivity in monolayer Bi2Sr2CaCu2O8+δ

Although copper oxide high-temperature superconductors constitute a complex and diverse material family, they all share a layered lattice structure. This curious fact prompts the question of whether high-temperature superconductivity can exist in an isolated monolayer of copper oxide, and if so, whether the two-dimensional superconductivity and various related phenomena differ from those of their three-dimensional counterparts. The answers may provide insights into the role of dimensionality in high-temperature superconductivity. Here we develop a fabrication process that obtains intrinsic monolayer crystals of the high-temperature superconductor Bi₂Sr₂CaCu₂O_8+δ (Bi-2212; here, a monolayer refers to a half unit cell that contains two CuO₂ planes). The highest superconducting transition temperature of the monolayer is as high as that of optimally doped bulk. The lack of dimensionality effect on the transition temperature defies expectations from the Mermin-Wagner theorem, in contrast to the much-reduced transition temperature in conventional two-dimensional superconductors such as NbSe₂. The properties of monolayer Bi-2212 become extremely tunable; our survey of superconductivity, the pseudogap, charge order and the Mott state at various doping concentrations reveals that the phases are indistinguishable from those in the bulk. Monolayer Bi-2212 therefore displays all the fundamental physics of high-temperature superconductivity. Our results establish monolayer copper oxides as a platform for studying high-temperature superconductivity and other strongly correlated phenomena in two dimensions.

Quasi-2D superconductivity in FeTe0.55Se0.45 ultrathin film

Iron-chalcogenide FeTe_0.55Se_0.45 was found to be a promising topological superconducting candidate recently, which may host Majorana bound state in the vortex core and thus attracts intensive research interests in this material. In this report, mechanically exfoliated FeTe_0.55Se_0.45 superconducting thin films close to the two-dimensional (2D) limit, i.e. sample thickness is on the order of coherence length, were studied systematically by means of electrical transport and point-contact Andreev-reflection spectroscopy (PCARS) measurements. The quasi-2D nature of FeTe_0.55Se_0.45 thin films is evidenced by the observation of Berezinskii-Kosterlitz-Thouless (BKT) transition and anisotropic upper critical fields in the vicinity of superconducting transition. Compared to bulk samples, we found that the superconducting transition temperature is only slightly suppressed even for films down to 5 nm. The superconducting gap symmetry remains unchanged and the gap size is weakly affected by tailoring thickness. Our findings suggest that the superconductivity of FeTe_0.55Se_0.45 thin films is rather robust against reduced dimensions. It provides a novel platform for device applications for quantum computations in combination with possible realization of Majorana modes in this material.

Superconductor-Insulator Transitions in Exfoliated Bi2Sr2CaCu2O8+δ Flakes

We realize superconductor-insulator transitions (SIT) in mechanically exfoliated Bi₂Sr₂CaCu₂O_8+δ (BSCCO) flakes and address simultaneously their transport properties as well as the evolution of density of states. Back-gating via the solid ion conductor (SIC) engenders a SIT in BSCCO due to the modulation of carrier density by intercalated lithium ions. Scaling analysis indicates that the SIT follows the theoretical description of a two-dimensional quantum phase transition (2D-QPT). We further carry out tunneling spectroscopy in graphite(G)/BSCCO heterojunctions. We observe V-shaped gaps in the critical regime of the SIT. The density of states in BSCCO gets symmetrically suppressed by further going into the insulating regime. Our technique of combining solid state gating with tunneling spectroscopy can be easily applied to the study of other two-dimensional materials.

Full superconducting dome of strong Ising protection in gated monolayer WS2

Many recent studies show that superconductivity not only exists in atomically thin monolayers but can exhibit enhanced properties such as a higher transition temperature and a stronger critical field. Nevertheless, besides being unstable in air, the weak tunability in these intrinsically metallic monolayers has limited the exploration of monolayer superconductivity, hindering their potential in electronic applications (e.g., superconductor-semiconductor hybrid devices). Here we show that using field effect gating, we can induce superconductivity in monolayer WS₂ grown by chemical vapor deposition, a typical ambient-stable semiconducting transition metal dichalcogenide (TMD), and we are able to access a complete set of competing electronic phases over an unprecedented doping range from band insulator, superconductor, to a reentrant insulator at high doping. Throughout the superconducting dome, the Cooper pair spin is pinned by a strong internal spin-orbit interaction, making this material arguably the most resilient superconductor in the external magnetic field. The reentrant insulating state at positive high gating voltages is attributed to localization induced by the characteristically weak screening of the monolayer, providing insight into many dome-like superconducting phases observed in field-induced quasi-2D superconductors.

Synthesis, structure and applications of graphene-based 2D heterostructures

With the profuse amount of two-dimensional (2D) materials discovered and the improvements in their synthesis and handling, the field of 2D heterostructures has gained increased interest in recent years. Such heterostructures not only overcome the inherent limitations of each of the materials, but also allow the realization of novel properties by their proper combination. The physical and mechanical properties of graphene mean it has a prominent place in the area of 2D heterostructures. In this review, we will discuss the evolution and current state in the synthesis and applications of graphene-based 2D heterostructures. In addition to stacked and in-plane heterostructures with other 2D materials and their potential applications, we will also cover heterostructures realized with lower dimensionality materials, along with intercalation in few-layer graphene as a special case of a heterostructure. Finally, graphene heterostructures produced using liquid phase exfoliation techniques and their applications to energy storage will be reviewed.

Comprehensive phase diagram of two-dimensional space charge doped Bi2Sr2CaCu2O8+x

The phase diagram of hole-doped high critical temperature superconductors as a function of doping and temperature has been intensively studied with chemical variation of doping. Chemical doping can provoke structural changes and disorder, masking intrinsic effects. Alternatively, a field-effect transistor geometry with an electrostatically doped, ultra-thin sample can be used. However, to probe the phase diagram, carrier density modulation beyond 10¹⁴ cm⁻² and transport measurements performed over a large temperature range are needed. Here we use the space charge doping method to measure transport characteristics from 330 K to low temperature. We extract parameters and characteristic temperatures over a large doping range and establish a comprehensive phase diagram for one-unit-cell-thick BSCCO-2212 as a function of doping, temperature and disorder.

The determination of the phase diagram of cuprate superconductors involves chemical doping which introduces disorder and could mask intrinsic effects. Sterpetti et al. establish this phase diagram with transport measurements in ultra-thin samples by modulating the carrier density with an alternative electrostatic method.

Strongly Coupled High-Quality Graphene/2D Superconducting Mo2C Vertical Heterostructures with Aligned Orientation

Vertical heterostructures of two-dimensional (2D) crystals have led to the observations of numerous exciting physical phenomena and presented the possibilities for technological applications, which strongly depend on the quality, interface, relative alignment, and interaction of the neighboring 2D crystals. The heterostructures or hybrids of graphene and superconductors offer a very interesting platform to study mesoscopic superconductivity and the interplay of the quantum Hall effect with superconductivity. However, so far the heterostructures of graphene and 2D superconductors are fabricated by stacking, and consequently suffer from random relative alignment, weak interfacial interaction, and unavoidable interface contaminants. Here we report the direct growth of high-quality graphene/2D superconductor (nonlayered ultrathin α-Mo₂C crystal) vertical heterostructures with uniformly well-aligned lattice orientation and strong interface coupling by chemical vapor deposition. In the heterostructure, both graphene and 2D α-Mo₂C crystal show no defect, and the graphene is strongly compressed. Different from the previously reported graphene/superconductor heterostructures or hybrids, the strong interface coupling leads to a phase diagram of superconducting transition with multiple voltage steps being observed in the transition regime. Furthermore, we demonstrate the realization of highly transparent Josephson junction devices based on these strongly coupled high-quality heterostructures, in which a clear magnetic-field-induced Fraunhofer pattern of the critical supercurrent is observed.

Growth of high-quality Bi2Sr2 CaCu2O8+δ whiskers and electrical properties of resulting exfoliated flakes

In this work, we demonstrate a simple technique to grow high-quality whiskers of Bi₂ Sr₂ CaCu₂ O_8+δ – a high T_c superconductor. Structural analysis shows the single-crystalline nature of the grown whiskers. To probe electrical properties, we exfoliate these whiskers into thin flakes (~50 nm thick) using the scotch-tape technique and develop a process to realize good electrical contacts. We observe a superconducting critical temperature, T_c, of 86 K. We map the evolution of the critical current as a function of temperature. With 2-D materials emerging as an exciting platform to study low-dimensional physics, our work paves the way for future studies on two-dimensional high-T_c superconductivity.

Meissner effect measurement of single indium particle using a customized on-chip nano-scale superconducting quantum interference device system

As many emergent phenomena of superconductivity appear on a smaller scale and at lower dimension, commercial magnetic property measurement systems (MPMSs) no longer provide the sensitivity necessary to study the Meissner effect of small superconductors. The nano-scale superconducting quantum interference device (nano-SQUID) is considered one of the most sensitive magnetic sensors for the magnetic characterization of mesoscopic or microscopic samples. Here, we develop a customized on-chip nano-SQUID measurement system based on a pulsed current biasing method. The noise performance of our system is approximately 4.6 × 10^-17 emu/Hz^1/2, representing an improvement of 9 orders of magnitude compared with that of a commercial MPMS (~10^-8 emu/Hz^1/2). Furthermore, we demonstrate the measurement of the Meissner effect of a single indium (In) particle (of 47 μm in diameter) using our on-chip nano-SQUID system. The system enables the observation of the prompt superconducting transition of the Meissner effect of a single In particle, thereby providing more accurate characterization of the critical field H_c and temperature T_c. In addition, the retrapping field H_re as a function of temperature T of single In particle shows disparate behavior from that of a large ensemble.

Low-temperature thermodynamics with quantum coherence

Thermal operations are an operational model of non-equilibrium quantum thermodynamics. In the absence of coherence between energy levels, exact state transition conditions under thermal operations are known in terms of a mathematical relation called thermo-majorization. But incorporating coherence has turned out to be challenging, even under the relatively tractable model wherein all Gibbs state-preserving quantum channels are included. Here we find a mathematical generalization of thermal operations at low temperatures, ‘cooling maps', for which we derive the necessary and sufficient state transition condition. Cooling maps that saturate recently discovered bounds on coherence transfer are realizable as thermal operations, motivating us to conjecture that all cooling maps are thermal operations. Cooling maps, though a less-conservative generalization to thermal operations, are more tractable than Gibbs-preserving operations, suggesting that cooling map-like models at general temperatures could be of use in gaining insight about thermal operations.

Thermal operations, a model of thermodynamic processes for small quantum systems out of equilibrium, are well-understood in absence of coherence. Here the authors introduce cooling processes, a generalization of thermal operations and find necessary and sufficient conditions for coherent state transitions via cooling processes.