1
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Kumar D, Tiwari R, Verma DK, Yadav S, Parwati K, Rai R, Adhikary P, Krishnamoorthi S. Negative capacitance based on isomeric polythiophene in action. SOFT MATTER 2024. [PMID: 39315655 DOI: 10.1039/d4sm01075b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/25/2024]
Abstract
In this study, we demonstrated that arranging positive and negative capacitance materials in series, based on isomeric polythiophene, led to a notable increase in total capacitance. Furthermore, the application of negative capacitance (NC) technology in supercapacitor (SC) construction offers the potential for energy storage capabilities surpassing fundamental limits. Our findings suggest the feasibility of developing all-organic based energy storage devices with high capacitance.
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Affiliation(s)
- Devendra Kumar
- Department of Chemistry, Center of Advanced Study, Institute of Science, Banaras Hindu University, Varanasi-221005, India.
| | - Rudramani Tiwari
- Department of Chemistry, Center of Advanced Study, Institute of Science, Banaras Hindu University, Varanasi-221005, India.
| | - Dipendra Kumar Verma
- Department of Chemistry, Center of Advanced Study, Institute of Science, Banaras Hindu University, Varanasi-221005, India.
| | - Shashikant Yadav
- Department of Chemistry, Center of Advanced Study, Institute of Science, Banaras Hindu University, Varanasi-221005, India.
| | - Km Parwati
- Department of Chemistry, Center of Advanced Study, Institute of Science, Banaras Hindu University, Varanasi-221005, India.
| | - Rajshree Rai
- Department of Chemistry, Center of Advanced Study, Institute of Science, Banaras Hindu University, Varanasi-221005, India.
| | - Pubali Adhikary
- Department of Chemistry, Center of Advanced Study, Institute of Science, Banaras Hindu University, Varanasi-221005, India.
| | - S Krishnamoorthi
- Department of Chemistry, Center of Advanced Study, Institute of Science, Banaras Hindu University, Varanasi-221005, India.
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2
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Park K, Kim D, Lee K, Lee HJ, Kim J, Kang S, Lin A, Pattison AJ, Theis W, Kim CH, Choi H, Cho JW, Ercius P, Lee JH, Chae SC, Park J. Atomic-Scale Scanning of Domain Network in the Ferroelectric HfO 2 Thin Film. ACS NANO 2024. [PMID: 39265148 DOI: 10.1021/acsnano.4c08721] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/14/2024]
Abstract
Ferroelectric HfO2-based thin films have attracted much interest in the utilization of ferroelectricity at the nanoscale for next-generation electronic devices. However, the structural origin and stabilization mechanism of the ferroelectric phase are not understood because the film is typically nanocrystalline with active yet stochastic ferroelectric domains. Here, electron microscopy is used to map the in-plane domain network structures of epitaxially grown ferroelectric Y:HfO2 films in atomic resolution. The ferroelectricity is confirmed in free-standing Y:HfO2 films, allowing for investigating the structural origin for their ferroelectricity by 4D-STEM, high-resolution STEM, and iDPC-STEM. At the grain boundaries of <111>-oriented Pca21 orthorhombic grains, a high-symmetry mixed-(R3m, Pnm21) phase is induced, exhibiting enhanced polarization due to in-plane compressive strain. Nanoscale Pca21 orthorhombic grains and their grain boundaries with mixed-(R3m, Pnm21) phases of higher symmetry cooperatively determine the ferroelectricity of the Y:HfO2 film. It is also found that such ferroelectric domain networks emerge when the film thickness is beyond a finite value. Furthermore, in-plane mapping of oxygen positions overlaid on ferroelectric domains discloses that polarization is suppressed at vertical domain walls, while it is active when domains are aligned horizontally with subangstrom domain walls. In addition, randomly distributed 180° charged domain walls are confined by spacer layers.
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Affiliation(s)
- Kunwoo Park
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, Republic of Korea
| | - Dongmin Kim
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, Republic of Korea
- Samsung Advanced Institute of Technology, Samsung Electronics, Suwon-si, Gyeonggi-do 16678, Republic of Korea
| | - Kyoungjun Lee
- Department of Physics Education, Seoul National University, Seoul 08826, Republic of Korea
| | - Hyun-Jae Lee
- Department of Energy Engineering, School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Jihoon Kim
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, Republic of Korea
| | - Sungsu Kang
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, Republic of Korea
| | - Alex Lin
- National Center for Electron Microscopy, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Alexander J Pattison
- National Center for Electron Microscopy, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Wolfgang Theis
- Nanoscale Physics Research Laboratory, School of Physics and Astronomy, University of Birmingham, Birmingham B15 2TT, U.K
| | - Chang Hoon Kim
- Department of Energy Engineering, School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Hyesung Choi
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, Republic of Korea
| | - Jung Woo Cho
- Department of Physics Education, Seoul National University, Seoul 08826, Republic of Korea
| | - Peter Ercius
- National Center for Electron Microscopy, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Jun Hee Lee
- Department of Energy Engineering, School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Seung Chul Chae
- Department of Physics Education, Seoul National University, Seoul 08826, Republic of Korea
| | - Jungwon Park
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, Republic of Korea
- Institute of Engineering Research, College of Engineering, Seoul National University, Seoul 08826, Republic of Korea
- Advanced Institute of Convergence Technology, Seoul National University, Suwon-si, Gyeonggi-do 16229, Republic of Korea
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3
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Wu R, Zhang H, Ma H, Zhao B, Li W, Chen Y, Liu J, Liang J, Qin Q, Qi W, Chen L, Li J, Li B, Duan X. Synthesis, Modulation, and Application of Two-Dimensional TMD Heterostructures. Chem Rev 2024; 124:10112-10191. [PMID: 39189449 DOI: 10.1021/acs.chemrev.4c00174] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/28/2024]
Abstract
Two-dimensional (2D) transition metal dichalcogenide (TMD) heterostructures have attracted a lot of attention due to their rich material diversity and stack geometry, precise controllability of structure and properties, and potential practical applications. These heterostructures not only overcome the inherent limitations of individual materials but also enable the realization of new properties through appropriate combinations, establishing a platform to explore new physical and chemical properties at micro-nano-pico scales. In this review, we systematically summarize the latest research progress in the synthesis, modulation, and application of 2D TMD heterostructures. We first introduce the latest techniques for fabricating 2D TMD heterostructures, examining the rationale, mechanisms, advantages, and disadvantages of each strategy. Furthermore, we emphasize the importance of characteristic modulation in 2D TMD heterostructures and discuss some approaches to achieve novel functionalities. Then, we summarize the representative applications of 2D TMD heterostructures. Finally, we highlight the challenges and future perspectives in the synthesis and device fabrication of 2D TMD heterostructures and provide some feasible solutions.
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Affiliation(s)
- Ruixia Wu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Hongmei Zhang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Huifang Ma
- Innovation Center for Gallium Oxide Semiconductor (IC-GAO), National and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies, College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- School of Flexible Electronics (Future Technologies) Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, Nanjing 211816, China
| | - Bei Zhao
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing 211189, China
| | - Wei Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Yang Chen
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Jianteng Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Jingyi Liang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Qiuyin Qin
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Weixu Qi
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Liang Chen
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Jia Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Bo Li
- Changsha Semiconductor Technology and Application Innovation Research Institute, School of Physics and Electronics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, China
| | - Xidong Duan
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
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4
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Kumar M, Park H, Seo H. Ultrahigh-speed absolute temperature sensing using ferroelectric HfO 2 enabled by transient negative differential capacitance. NANOSCALE 2024. [PMID: 39253761 DOI: 10.1039/d4nr02776k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/11/2024]
Abstract
Conventional ferroelectric polarization-driven temperature sensors, like pyroelectric sensors, often face challenges such as slow response times, limited compatibility with conventional nanoelectronics, and inability to operate under constant temperature conditions. These shortcomings hinder their adaptability to a broad range of applications, especially when compared to thermal and optical sensors. To address these challenges, we introduce a proof-of-concept methodology that enables ferroelectric-based pyroelectric sensors to measure absolute temperatures with high accuracy and speed. Specifically, we demonstrate that a perturbation pulse (+0.8 V, duration = 180 ns) can serve as an effective probe for quantifying both absolute and dynamic temperatures across ferroelectric hafnium zirconium oxide (HZO) nanolaminates. The device demonstrates an ultrafast response time of ∼50 nanoseconds, offering one million readings per second and a temperature sensing accuracy comparable to the state-of-the-art temperature sensing accuracy of 1.0 K. The observed performance is attributed to the temperature-dependent change of transient negative differential capacitance and effective ferroelectric polarization of HZO. For potential applications, we successfully integrated the sensor with a commercially available universal serial bus interface, thereby demonstrating real-time temperature monitoring during data transfer and environmental heating activities. Our research significantly broadens the range of applications for pyroelectric sensors for both steady-state and rapid dynamic temperature measurements.
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Affiliation(s)
- Mohit Kumar
- Department of Energy Systems Research, Ajou University, Suwon, 16499, Republic of Korea.
- Department of Materials Science and Engineering, Ajou University, Suwon, 16499, Republic of Korea
| | - Hayoung Park
- Department of Energy Systems Research, Ajou University, Suwon, 16499, Republic of Korea.
| | - Hyungtak Seo
- Department of Energy Systems Research, Ajou University, Suwon, 16499, Republic of Korea.
- Department of Materials Science and Engineering, Ajou University, Suwon, 16499, Republic of Korea
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5
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Chen RS, Lu Y. Negative Capacitance Field Effect Transistors based on Van der Waals 2D Materials. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2304445. [PMID: 37899295 DOI: 10.1002/smll.202304445] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/27/2023] [Revised: 09/20/2023] [Indexed: 10/31/2023]
Abstract
Steep subthreshold swing (SS) is a decisive index for low energy consumption devices. However, the SS of conventional field effect transistors (FETs) has suffered from Boltzmann Tyranny, which limits the scaling of SS to sub-60 mV dec-1 at room temperature. Ferroelectric gate stack with negative capacitance (NC) is proved to reduce the SS effectively by the amplification of the gate voltage. With the application of 2D ferroelectric materials, the NC FETs can be further improved in performance and downscaled to a smaller dimension as well. This review introduces some related concepts for in-depth understanding of NC FETs, including the NC, internal gate voltage, SS, negative drain-induced barrier lowering, negative differential resistance, single-domain state, and multi-domain state. Meanwhile, this work summarizes the recent advances of the 2D NC FETs. Moreover, the electrical characteristics of some high-performance NC FETs are expressed as well. The factors which affect the performance of the 2D NC FETs are also presented in this paper. Finally, this work gives a brief summary and outlook for the 2D NC FETs.
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Affiliation(s)
- Ruo-Si Chen
- School of Engineering, College of Engineering, Computing & Cybernetics, Australian National University, Canberra, ACT, 2602, Australia
| | - Yuerui Lu
- School of Engineering, College of Engineering, Computing & Cybernetics, Australian National University, Canberra, ACT, 2602, Australia
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6
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Jiang S, Sun J, Pei M, Peng L, Dai Q, Wu C, Gu J, Yang Y, Su J, Gu D, Zhang H, Guo H, Li Y. Energy-Efficient Reservoir Computing Based on Solution-Processed Electrolyte/Ferroelectric Memcapacitive Synapses for Biosignal Classification. J Phys Chem Lett 2024; 15:8501-8509. [PMID: 39133786 DOI: 10.1021/acs.jpclett.4c01896] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/23/2024]
Abstract
The classification of critical physiological signals using neuromorphic devices is essential for early disease detection. Physical reservoir computing (RC), a lightweight temporal processing neural network, offers a promising solution for low-power, resource-constrained hardware. Although solution-processed memcapacitive reservoirs have the potential to improve power efficiency as a result of their ultralow static power consumption, further advancements in synaptic tunability and reservoir states are imperative to enhance the capabilities of RC systems. This work presents solution-processed electrolyte/ferroelectric memcapacitive synapses. Leveraging the synergistic coupling of electrical double-layer (EDL) effects and ferroelectric polarization, these synapses exhibit tunable long- and short-term plasticity, ultralow power consumption (∼27 fJ per spike), and rich reservoir state dynamics, making them well-suited for energy-efficient RC systems. The classifications of critical electrocardiogram (ECG) signals, including arrhythmia and obstructive sleep apnea (OSA), are performed using the synapse-based RC system, demonstrating excellent accuracies of 97.8 and 80.0% for arrhythmia and OSA classifications, respectively. These findings pave the way for developing lightweight, energy-efficient machine-learning platforms for biosignal classification in wearable devices.
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Affiliation(s)
- Sai Jiang
- School of Integrated Circuits Industry, Wang Zheng School of Microelectronics, Changzhou University, Changzhou, Jiangsu 213164, People's Republic of China
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, Jiangsu 210093, People's Republic of China
| | - Jinrui Sun
- School of Integrated Circuits Industry, Wang Zheng School of Microelectronics, Changzhou University, Changzhou, Jiangsu 213164, People's Republic of China
| | - Mengjiao Pei
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, Jiangsu 210093, People's Republic of China
| | - Lichao Peng
- School of Integrated Circuits Industry, Wang Zheng School of Microelectronics, Changzhou University, Changzhou, Jiangsu 213164, People's Republic of China
| | - Qinyong Dai
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, Jiangsu 210093, People's Republic of China
| | - Chaoran Wu
- School of Integrated Circuits Industry, Wang Zheng School of Microelectronics, Changzhou University, Changzhou, Jiangsu 213164, People's Republic of China
| | - Jiahao Gu
- School of Integrated Circuits Industry, Wang Zheng School of Microelectronics, Changzhou University, Changzhou, Jiangsu 213164, People's Republic of China
| | - Yanqin Yang
- School of Integrated Circuits Industry, Wang Zheng School of Microelectronics, Changzhou University, Changzhou, Jiangsu 213164, People's Republic of China
| | - Jian Su
- School of Integrated Circuits Industry, Wang Zheng School of Microelectronics, Changzhou University, Changzhou, Jiangsu 213164, People's Republic of China
| | - Ding Gu
- School of Integrated Circuits Industry, Wang Zheng School of Microelectronics, Changzhou University, Changzhou, Jiangsu 213164, People's Republic of China
| | - Han Zhang
- School of Integrated Circuits Industry, Wang Zheng School of Microelectronics, Changzhou University, Changzhou, Jiangsu 213164, People's Republic of China
| | - Huafei Guo
- School of Integrated Circuits Industry, Wang Zheng School of Microelectronics, Changzhou University, Changzhou, Jiangsu 213164, People's Republic of China
| | - Yun Li
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, Jiangsu 210093, People's Republic of China
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7
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Chen J, Sun MY, Wang ZH, Zhang Z, Zhang K, Wang S, Zhang Y, Wu X, Ren TL, Liu H, Han L. Performance Limits and Advancements in Single 2D Transition Metal Dichalcogenide Transistor. NANO-MICRO LETTERS 2024; 16:264. [PMID: 39120835 PMCID: PMC11315877 DOI: 10.1007/s40820-024-01461-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/10/2024] [Accepted: 06/13/2024] [Indexed: 08/10/2024]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDs) allow for atomic-scale manipulation, challenging the conventional limitations of semiconductor materials. This capability may overcome the short-channel effect, sparking significant advancements in electronic devices that utilize 2D TMDs. Exploring the dimension and performance limits of transistors based on 2D TMDs has gained substantial importance. This review provides a comprehensive investigation into these limits of the single 2D-TMD transistor. It delves into the impacts of miniaturization, including the reduction of channel length, gate length, source/drain contact length, and dielectric thickness on transistor operation and performance. In addition, this review provides a detailed analysis of performance parameters such as source/drain contact resistance, subthreshold swing, hysteresis loop, carrier mobility, on/off ratio, and the development of p-type and single logic transistors. This review details the two logical expressions of the single 2D-TMD logic transistor, including current and voltage. It also emphasizes the role of 2D TMD-based transistors as memory devices, focusing on enhancing memory operation speed, endurance, data retention, and extinction ratio, as well as reducing energy consumption in memory devices functioning as artificial synapses. This review demonstrates the two calculating methods for dynamic energy consumption of 2D synaptic devices. This review not only summarizes the current state of the art in this field but also highlights potential future research directions and applications. It underscores the anticipated challenges, opportunities, and potential solutions in navigating the dimension and performance boundaries of 2D transistors.
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Affiliation(s)
- Jing Chen
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China
- BNRist, Tsinghua University, Beijing, 100084, People's Republic of China
| | - Ming-Yuan Sun
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China
| | - Zhen-Hua Wang
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China
| | - Zheng Zhang
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China
| | - Kai Zhang
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China
| | - Shuai Wang
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China
| | - Yu Zhang
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China
- Shenzhen Research Institute of Shandong University, Shenzhen, 518057, People's Republic of China
| | - Xiaoming Wu
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, People's Republic of China
| | - Tian-Ling Ren
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, People's Republic of China.
| | - Hong Liu
- State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, Shandong, People's Republic of China
| | - Lin Han
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China.
- State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, Shandong, People's Republic of China.
- Shenzhen Research Institute of Shandong University, Shenzhen, 518057, People's Republic of China.
- Shandong Engineering Research Center of Biomarker and Artificial Intelligence Application, Jinan, 250100, People's Republic of China.
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8
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Pradhan JR, Dasgupta S. Fully Printed Negative-Capacitance Field-Effect Transistors with Ultralow Subthreshold Swing and High Inverter Signal Gain. ACS APPLIED MATERIALS & INTERFACES 2024; 16:39517-39527. [PMID: 39012262 DOI: 10.1021/acsami.4c00548] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/17/2024]
Abstract
The switching of conventional field-effect transistors (FETs) is limited by the Boltzmann barrier of thermionic emission, which prevents the realization of low-power electronics. In order to overcome this limitation, among others, unconventional device geometry with a ferroelectric/dielectric insulator stack has been proposed to demonstrate stable negative-capacitance behavior. Here, the switching of the ferroelectric layer behaves like a step-up amplifier and results in a body factor less than 1. This implies a larger change in the semiconductor surface potential compared to the applied gate voltage variation. The transistors with such ferroelectric/dielectric stack are known as negative-capacitance field-effect transistors (nc-FETs), and can demonstrate a subthreshold slope lower than the Boltzmann's limit (60 mV/decade). While nc-FETs have typically been realized with high-vacuum-deposition processes, here we show fully printed nc-FETs with amorphous indium-gallium-zinc oxide (a-IGZO) as the semiconductor material, Al2O3 as the dielectric, and poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE) as the polymer ferroelectric. The printed nc-FETs demonstrate an extremely low subthreshold slope of ∼2.3 mV/decade at room temperature, which remains below the Boltzmann's limit for over 5 orders of magnitude of drain currents. Furthermore, the unipolar depletion-load-type inverters fabricated using n-type nc-FETs have demonstrated an extraordinary signal gain of 2691.
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Affiliation(s)
- Jyoti Ranjan Pradhan
- Department of Materials Engineering, Indian Institute of Science (IISc), C V Raman Avenue, Bangalore 560012, Karnataka, India
| | - Subho Dasgupta
- Department of Materials Engineering, Indian Institute of Science (IISc), C V Raman Avenue, Bangalore 560012, Karnataka, India
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9
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Sett S, Debnath R, Singha A, Mandal S, Jyothsna KM, Bhakar M, Watanabe K, Taniguchi T, Raghunathan V, Sheet G, Jain M, Ghosh A. Emergent Inhomogeneity and Nonlocality in a Graphene Field-Effect Transistor on a Near-Parallel Moiré Superlattice of Transition Metal Dichalcogenides. NANO LETTERS 2024. [PMID: 39012311 DOI: 10.1021/acs.nanolett.4c01755] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/17/2024]
Abstract
At near-parallel orientation, twisted bilayers of transition metal dichalcogenides exhibit interlayer charge transfer-driven out-of-plane ferroelectricity. Here, we report detailed electrical transport in a dual-gated graphene field-effect transistor placed on a 2.1° twisted bilayer WSe2. We observe hysteretic transfer characteristics and an emergent charge inhomogeneity with multiple local Dirac points evolving with an increasing electric displacement field (D). Concomitantly, we also observe a strong nonlocal voltage signal at D ∼ 0 V/nm that decreases rapidly with increasing D. A linear scaling of the nonlocal signal with longitudinal resistance suggests edge mode transport, which we attribute to the breaking of valley symmetry of graphene due to the spatially fluctuating electric field from the underlying polarized moiré domains. A quantitative analysis suggests the emergence of finite-size domains in graphene that modulate the charge and the valley currents simultaneously. This work underlines the impact of interfacial ferroelectricity that can trigger a new generation of devices.
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Affiliation(s)
- Shaili Sett
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
| | - Rahul Debnath
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
| | - Arup Singha
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
| | - Shinjan Mandal
- Centre for Condensed Matter Theory, Department of Physics, Indian Institute of Science, Bangalore 560012, India
| | - K M Jyothsna
- Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore 560012, India
| | - Monika Bhakar
- Department of Physics, Indian Institute of Science Education and Research Mohali, Punjab 140306, India
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Varun Raghunathan
- Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore 560012, India
| | - Goutam Sheet
- Department of Physics, Indian Institute of Science Education and Research Mohali, Punjab 140306, India
| | - Manish Jain
- Centre for Condensed Matter Theory, Department of Physics, Indian Institute of Science, Bangalore 560012, India
| | - Arindam Ghosh
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
- Centre for Nanoscience and Engineering, Indian Institute of Science, Bangalore 560012, India
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10
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Li T, Deng S, Liu H, Chen J. Insights into Strain Engineering: From Ferroelectrics to Related Functional Materials and Beyond. Chem Rev 2024; 124:7045-7105. [PMID: 38754042 DOI: 10.1021/acs.chemrev.3c00767] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/18/2024]
Abstract
Ferroelectrics have become indispensable components in various application fields, including information processing, energy harvesting, and electromechanical conversion, owing to their unique ability to exhibit electrically or mechanically switchable polarization. The distinct polar noncentrosymmetric lattices of ferroelectrics make them highly responsive to specific crystal structures. Even slight changes in the lattice can alter the polarization configuration and response to external fields. In this regard, strain engineering has emerged as a prevalent regulation approach that not only offers a versatile platform for structural and performance optimization within ferroelectrics but also unlocks boundless potential in various functional materials. In this review, we systematically summarize the breakthroughs in ferroelectric-based functional materials achieved through strain engineering and progress in method development. We cover research activities ranging from fundamental attributes to wide-ranging applications and novel functionalities ranging from electromechanical transformation in sensors and actuators to tunable dielectric materials and information technologies, such as transistors and nonvolatile memories. Building upon these achievements, we also explore the endeavors to uncover the unprecedented properties through strain engineering in related chemical functionalities, such as ferromagnetism, multiferroicity, and photoelectricity. Finally, through discussions on the prospects and challenges associated with strain engineering in the materials, this review aims to stimulate the development of new methods for strain regulation and performance boosting in functional materials, transcending the boundaries of ferroelectrics.
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Affiliation(s)
- Tianyu Li
- Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
- Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Shiqing Deng
- Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Hui Liu
- Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Jun Chen
- Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
- Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
- Hainan University, Haikou 570228, China
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11
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HuangFu C, Zhou Y, Ke C, Liao J, Wang J, Liu H, Liu D, Liu S, Xie L, Jiao L. Out-of-Plane Ferroelectricity in Two-Dimensional 1T‴-MoS 2 Above Room Temperature. ACS NANO 2024; 18:14708-14715. [PMID: 38781476 DOI: 10.1021/acsnano.4c03608] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2024]
Abstract
Two-dimensional (2D) molybdenum disulfide (MoS2), one of the most extensively studied van der Waals (vdW) materials, is a significant candidate for electronic materials in the post-Moore era. MoS2 exhibits various phases, among which the 1T‴ phase possesses noncentrosymmetry. 1T‴-MoS2 was theoretically predicted to be ferroelectric a decade ago, but this has not been experimentally confirmed until now. Here, we have prepared high-purity 2D 1T‴-MoS2 crystals and experimentally confirmed the room-temperature out-of-plane ferroelectricity. The noncentrosymmetric crystal structure in 2D 1T‴-MoS2 was convinced by atomically resolved transmission electron microscopic imaging and second harmonic generation (SHG) measurements. Further, the ferroelectric polarization states in 2D 1T‴-MoS2 can be switched using piezoresponse force microscopy (PFM) and electrical gating in field-effect transistors (FETs). The ferroelectric-to-paraelectric transition temperature is measured to be about 350 K. Theoretical calculations have revealed that the ferroelectricity of 2D 1T‴-MoS2 originates from the intralayer charge transfer of S atoms within the layer. The discovery of intrinsic ferroelectricity in the 1T‴ phase of MoS2 further enriches the properties of this important vdW material, providing more possibilities for its application in the field of next-generation electronic devices.
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Affiliation(s)
- Changan HuangFu
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084, China
| | - Yaming Zhou
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084, China
| | - Changming Ke
- Institute of Natural Sciences, Westlake Institute for Advanced Study, Hangzhou 310024, Zhejiang, China
- Department of Physics, School of Science, Westlake University, Hangzhou 310024, Zhejiang, China
| | - Junyi Liao
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084, China
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jiangcai Wang
- State Key Laboratory of Tribology in Advanced Equipment, Tsinghua University, Beijing 100084, China
| | - Huan Liu
- State Key Laboratory of Tribology in Advanced Equipment, Tsinghua University, Beijing 100084, China
| | - Dameng Liu
- State Key Laboratory of Tribology in Advanced Equipment, Tsinghua University, Beijing 100084, China
| | - Shi Liu
- Institute of Natural Sciences, Westlake Institute for Advanced Study, Hangzhou 310024, Zhejiang, China
- Department of Physics, School of Science, Westlake University, Hangzhou 310024, Zhejiang, China
| | - Liming Xie
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Liying Jiao
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084, China
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12
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Wu Y, Yang H, He Q, Jiang H, Chen W, Tan C, Zhang Y, Zheng Y. The Investigation of Neuromimetic Dynamics in Ferroelectrics via In Situ TEM. NANO LETTERS 2024. [PMID: 38825790 DOI: 10.1021/acs.nanolett.4c01626] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2024]
Abstract
The core task of neuromorphic devices is to effectively simulate the behavior of neurons and synapses. Based on the functionality of ferroelectric domains with the advantages of low power consumption and high-speed response, great progress has been made in realizing neuromimetic behaviors such as ferroelectric synaptic devices. However, the correlation between the ferroelectric domain dynamics and neuromimetic behavior remains unclear. Here, we reveal the correlation between domain/domain wall dynamics and neuromimetic behaviors from a microscopic perspective in real-time by using high temporal and spatial resolution in situ transmission electron microscopy. Furthermore, we propose utilizing ferroelectric microstructures for the simultaneous simulation of neuronal and synaptic plasticity, which is expected to improve the integration and performance of ferroelectric neuromorphic devices. We believe that this work to study neuromimetic behavior from the perspective of domain dynamics is instructive for the development of ferroelectric neuromorphic devices.
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Affiliation(s)
- Yiwei Wu
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
| | - Hui Yang
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
| | - Qian He
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
| | - He Jiang
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
| | - Weijin Chen
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
| | - Congbing Tan
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- Hunan Provincial Key Laboratory of Intelligent Sensors and Sensor Materials, School of Physics and Electronics, Hunan University of Science and Technology, Xiangtan 411201, People's Republic of China
| | - Yi Zhang
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
| | - Yue Zheng
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
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13
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Nikolaidou A, Mougkogiannis P, Adamatzky A. Electroactive composite biofilms integrating Kombucha, Chlorella and synthetic proteinoid Proto-Brains. ROYAL SOCIETY OPEN SCIENCE 2024; 11:240238. [PMID: 39076784 PMCID: PMC11285679 DOI: 10.1098/rsos.240238] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Indexed: 07/31/2024]
Abstract
In this study, we present electroactive biofilms made from a combination of Kombucha zoogleal mats and thermal proteinoids. These biofilms have potential applications in unconventional computing and robotic skin. Proteinoids are synthesized by thermally polymerizing amino acids, resulting in the formation of synthetic protocells that display electrical signalling similar to neurons. By incorporating proteinoids into Kombucha zoogleal cellulose mats, hydrogel biofilms can be created that have the ability to efficiently transfer charges, perform sensory transduction and undergo processing. We conducted a study on the memfractance and memristance behaviours of composite biofilms, showcasing their capacity to carry out unconventional computing operations. The porous nanostructure and electroactivity of the biofilm create a biocompatible interface that can be used to record and stimulate neuronal networks. In addition to in vitro neuronal interfaces, these soft electroactive biofilms show potential as components for bioinspired robotics, smart wearables, unconventional computing devices and adaptive biorobotic systems. Kombucha-proteinoids composite films are a highly customizable material that can be synthesized to suit specific needs. These films belong to a unique category of 'living' materials, as they have the ability to support cellular systems and improve bioelectronic functionality. This makes them an exciting prospect in various applications. Ongoing efforts are currently being directed towards enhancing the compositional tuning of conductivity, signal processing and integration within hybrid bioelectronic circuits.
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Affiliation(s)
- Anna Nikolaidou
- Unconventional Computing Laboratory, University of the West of England, Bristol, UK
- School of Architecture and Environment, University of the West of England, Bristol, UK
| | | | - Andrew Adamatzky
- Unconventional Computing Laboratory, University of the West of England, Bristol, UK
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14
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Cheema SS, Shanker N, Hsu SL, Schaadt J, Ellis NM, Cook M, Rastogi R, Pilawa-Podgurski RCN, Ciston J, Mohamed M, Salahuddin S. Giant energy storage and power density negative capacitance superlattices. Nature 2024; 629:803-809. [PMID: 38593860 DOI: 10.1038/s41586-024-07365-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/28/2022] [Accepted: 03/29/2024] [Indexed: 04/11/2024]
Abstract
Dielectric electrostatic capacitors1, because of their ultrafast charge-discharge, are desirable for high-power energy storage applications. Along with ultrafast operation, on-chip integration can enable miniaturized energy storage devices for emerging autonomous microelectronics and microsystems2-5. Moreover, state-of-the-art miniaturized electrochemical energy storage systems-microsupercapacitors and microbatteries-currently face safety, packaging, materials and microfabrication challenges preventing on-chip technological readiness2,3,6, leaving an opportunity for electrostatic microcapacitors. Here we report record-high electrostatic energy storage density (ESD) and power density, to our knowledge, in HfO2-ZrO2-based thin film microcapacitors integrated into silicon, through a three-pronged approach. First, to increase intrinsic energy storage, atomic-layer-deposited antiferroelectric HfO2-ZrO2 films are engineered near a field-driven ferroelectric phase transition to exhibit amplified charge storage by the negative capacitance effect7-12, which enhances volumetric ESD beyond the best-known back-end-of-the-line-compatible dielectrics (115 J cm-3) (ref. 13). Second, to increase total energy storage, antiferroelectric superlattice engineering14 scales the energy storage performance beyond the conventional thickness limitations of HfO2-ZrO2-based (anti)ferroelectricity15 (100-nm regime). Third, to increase the storage per footprint, the superlattices are conformally integrated into three-dimensional capacitors, which boosts the areal ESD nine times and the areal power density 170 times that of the best-known electrostatic capacitors: 80 mJ cm-2 and 300 kW cm-2, respectively. This simultaneous demonstration of ultrahigh energy density and power density overcomes the traditional capacity-speed trade-off across the electrostatic-electrochemical energy storage hierarchy1,16. Furthermore, the integration of ultrahigh-density and ultrafast-charging thin films within a back-end-of-the-line-compatible process enables monolithic integration of on-chip microcapacitors5, which can unlock substantial energy storage and power delivery performance for electronic microsystems17-19.
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Affiliation(s)
- Suraj S Cheema
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA.
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
| | - Nirmaan Shanker
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA
| | - Shang-Lin Hsu
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA
| | - Joseph Schaadt
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA
- Department of Mechanical Engineering, University of California, Berkeley, CA, USA
| | - Nathan M Ellis
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA
| | - Matthew Cook
- Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
| | - Ravi Rastogi
- Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
| | | | - Jim Ciston
- National Center for Electron Microscopy Facility, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Mohamed Mohamed
- Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
| | - Sayeef Salahuddin
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA.
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
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15
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Kévin AL, Damien D, Brice G. Ultrafast and accurate prediction of polycrystalline hafnium oxide phase-field ferroelectric hysteresis using graph neural networks. NANOSCALE ADVANCES 2024; 6:2350-2362. [PMID: 38694469 PMCID: PMC11059552 DOI: 10.1039/d3na01115a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/13/2023] [Accepted: 03/18/2024] [Indexed: 05/04/2024]
Abstract
Polycrystalline hafnium oxide emerges as a promising material for the future of nanoelectronic devices. While phase-field modeling stands as a primary choice tool for forecasting domain structure evolution and electromechanical properties of ferroelectric materials, it suffers from a high computational cost, which impedes its applicability to real-size systems. Here, we propose a Graph Neural Network (GNN) machine-learning framework to predict the ferroelectric hysteresis of polycrystalline hafnium oxide, with the goal of significantly accelerating computations in contrast to high-fidelity phase-field methods. By leveraging the inherent graph structure of the polycrystalline system and incorporating edge-level feature properties through graph attentional layers, our approach accurately predicts hysteresis behaviors across a broad range of polycrystalline structures, grain numbers, and Landau coefficients. The GNN framework exhibits high accuracy, with an average relative error of ∼4%, and demonstrates remarkable computational efficiency with respect to ground truth phase-field simulations, offering speed-ups exceeding a million-fold. Furthermore, we showcase the transferability of our model to efficiently scale predictions in polycrystals comprising up to a thousand grains, paving the way for effective simulations of real-sized systems. Our approach, by overcoming computational limitations in polycrystalline hafnium oxide, opens doors for accelerating discovery and design in ferroelectric materials.
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Affiliation(s)
- Alhada-Lahbabi Kévin
- INSA Lyon, Ecole Centrale de Lyon, CNRS, Universite Claude Bernard Lyon 1, CPE Lyon, INL, UMR5270 69622 Villeurbanne France
| | - Deleruyelle Damien
- INSA Lyon, Ecole Centrale de Lyon, CNRS, Universite Claude Bernard Lyon 1, CPE Lyon, INL, UMR5270 69622 Villeurbanne France
| | - Gautier Brice
- INSA Lyon, Ecole Centrale de Lyon, CNRS, Universite Claude Bernard Lyon 1, CPE Lyon, INL, UMR5270 69622 Villeurbanne France
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16
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Kumar D, Tiwari R, Verma DK, Yadav S, Parwati K, Adhikary P, Krishnamoorthi S. Isomeric polythiophene: a promising material for low voltage electronic devices. SOFT MATTER 2024; 20:1293-1300. [PMID: 38240121 DOI: 10.1039/d3sm01479g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/08/2024]
Abstract
In this investigation, we present empirical observations detailing the manifestation of substantial negative capacitance (NC), reaching up to -1 F, within iodine-doped isomeric polythiophene (IPTh-I2). NC observed in our case is not transient but stable enough to be measured for as long as the optimum concentration of the iodine dopant is available. In contrast, undoped isomeric polythiophene (IPTh) manifests a modest positive capacitance ranging from 30 to 60 μF. The concatenation of IPTh-I2 and IPTh in the series results in an augmentation of the total capacitance of the system (∼170 μF), exemplifying a characteristic feature of NC. Conversely, a bilayer configuration consisting of IPTh:IPTh exhibits a reduction in total capacitance by 38%. A notable amplification in the dielectric constant, escalating from 30 in IPTh to approximately 2000 in IPTh-I2, signifies extensive conformational and structural alterations arising from interactions between the doped polymer chain and various iodide species, attributing to the emergence of NC. Furthermore, we document a single-sided p-n junction diode with a low knee voltage (below 0.5 V) as a model device, illustrating the potential of IPTh as a promising material for the design and development of negative capacitance-based field-effect transistors. This research offers avenues for the scientific community to conceive low knee voltage-operating diodes, transistors, supercapacitors, and various other electronic devices based on all-organic semiconductors.
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Affiliation(s)
- Devendra Kumar
- Department of Chemistry, Center of Advanced Study, Institute of Science, Banaras Hindu University, Varanasi-221005, India.
| | - Rudramani Tiwari
- Department of Chemistry, Center of Advanced Study, Institute of Science, Banaras Hindu University, Varanasi-221005, India.
| | - Dipendra Kumar Verma
- Department of Chemistry, Center of Advanced Study, Institute of Science, Banaras Hindu University, Varanasi-221005, India.
| | - Shashikant Yadav
- Department of Chemistry, Center of Advanced Study, Institute of Science, Banaras Hindu University, Varanasi-221005, India.
| | - Km Parwati
- Department of Chemistry, Center of Advanced Study, Institute of Science, Banaras Hindu University, Varanasi-221005, India.
| | - Pubali Adhikary
- Department of Chemistry, Center of Advanced Study, Institute of Science, Banaras Hindu University, Varanasi-221005, India.
| | - S Krishnamoorthi
- Department of Chemistry, Center of Advanced Study, Institute of Science, Banaras Hindu University, Varanasi-221005, India.
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17
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Liu J, Su L, Zhang X, Shtansky DV, Fang X. Ferroelectric-Optoelectronic Hybrid System for Photodetection. SMALL METHODS 2024; 8:e2300319. [PMID: 37312397 DOI: 10.1002/smtd.202300319] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/12/2023] [Revised: 04/28/2023] [Indexed: 06/15/2023]
Abstract
Photodetectors (PDs), as functional devices based on photon-to-electron conversion, are an indispensable component for the next-generation Internet of Things system. The research of advanced and efficient PDs that meet the diverse demands is becoming a major task. Ferroelectric materials can develop a unique spontaneous polarization due to the symmetry-breaking of the unit cell, which is switchable under an external electric field. Ferroelectric polarization field has the intrinsic characteristics of non-volatilization and rewritability. Introducing ferroelectrics to effectively manipulate the band bending and carrier transport can be non-destructive and controllable in the ferroelectric-optoelectronic hybrid systems. Hence, ferroelectric integration offers a promising strategy for high-performance photoelectric detection. This paper reviews the fundamentals of optoelectronic and ferroelectric materials, and their interactions in hybrid photodetection systems. The first section introduces the characteristics and applications of typical optoelectronic and ferroelectric materials. Then, the interplay mechanisms, modulation effects, and typical device structures of ferroelectric-optoelectronic hybrid systems are discussed. Finally, in summary and perspective section, the progress of ferroelectrics integrated PDs is summed up and the challenges of ferroelectrics in the field of optoelectronics are considered.
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Affiliation(s)
- Jie Liu
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Institute of Optoelectronics, Fudan University, Shanghai, 200438, P. R. China
| | - Li Su
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Institute of Optoelectronics, Fudan University, Shanghai, 200438, P. R. China
| | - Xinglong Zhang
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Institute of Optoelectronics, Fudan University, Shanghai, 200438, P. R. China
| | - Dmitry V Shtansky
- National University of Science and Technology "MISIS", Moscow, 119049, Russia
| | - Xiaosheng Fang
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Institute of Optoelectronics, Fudan University, Shanghai, 200438, P. R. China
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18
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Liu Q, Cui S, Bian R, Pan E, Cao G, Li W, Liu F. The Integration of Two-Dimensional Materials and Ferroelectrics for Device Applications. ACS NANO 2024; 18:1778-1819. [PMID: 38179983 DOI: 10.1021/acsnano.3c05711] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/06/2024]
Abstract
In recent years, there has been growing interest in functional devices based on two-dimensional (2D) materials, which possess exotic physical properties. With an ultrathin thickness, the optoelectrical and electrical properties of 2D materials can be effectively tuned by an external field, which has stimulated considerable scientific activities. Ferroelectric fields with a nonvolatile and electrically switchable feature have exhibited enormous potential in controlling the electronic and optoelectronic properties of 2D materials, leading to an extremely fertile area of research. Here, we review the 2D materials and relevant devices integrated with ferroelectricity. This review starts to introduce the background about the concerned themes, namely 2D materials and ferroelectrics, and then presents the fundamental mechanisms, tuning strategies, as well as recent progress of the ferroelectric effect on the optical and electrical properties of 2D materials. Subsequently, the latest developments of 2D material-based electronic and optoelectronic devices integrated with ferroelectricity are summarized. Finally, the future outlook and challenges of this exciting field are suggested.
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Affiliation(s)
- Qing Liu
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313099, China
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Silin Cui
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313099, China
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Renji Bian
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313099, China
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Er Pan
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313099, China
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Guiming Cao
- School of Information Science and Technology, Xi Chang University, 615013 Xi'an, China
| | - Wenwu Li
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Department of Materials Science, Fudan University, Shanghai 200433, China
| | - Fucai Liu
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313099, China
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
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19
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Daw D, Bouzid H, Jung M, Suh D, Biswas C, Hee Lee Y. Ultrafast Negative Capacitance Transition for 2D Ferroelectric MoS 2 /Graphene Transistor. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2304338. [PMID: 38153167 DOI: 10.1002/adma.202304338] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/09/2023] [Revised: 07/31/2023] [Indexed: 12/29/2023]
Abstract
Negative capacitance gives rise to subthreshold swing (SS) below the fundamental limit by efficient modulation of surface potential in transistors. While negative-capacitance transition is reported in polycrystalline Pb(Zr0.2 Ti0.8 )O3 (PZT) and HfZrO2 (HZO) thin-films in few microseconds timescale, low SS is not persistent over a wide range of drain current when used instead of conventional dielectrics. In this work, the clear nano-second negative transition states in 2D single-crystal CuInP2 S6 (CIPS) flakes have been demonstrated by an alternative fast-transient measurement technique. Further, integrating this ultrafast NC transition with the localized density of states of Dirac contacts and controlled charge transfer in the CIPS/channel (MoS2 /graphene) a state-of-the-art device architecture, negative capacitance Dirac source drain field effect transistor (FET) is introduced. This yields an ultralow SS of 4.8 mV dec-1 with an average sub-10 SS across five decades with on-off ratio exceeding 107 , by simultaneous improvement of transport and body factors in monolayer MoS2 -based FET, outperforming all previous reports. This approach could pave the way to achieve ultralow-SS FETs for future high-speed and low-power electronics.
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Affiliation(s)
- Debottam Daw
- Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Houcine Bouzid
- Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Moonyoung Jung
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Dongseok Suh
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Chandan Biswas
- Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Young Hee Lee
- Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
- Department of Physics, Sungkyunkwan University, Suwon, 16419, Republic of Korea
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20
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Feng ZJ, Xiong YA, Sun WC, Sha TT, Yao J, Pan Q, Hu H, Dong S, Xiong RG, You YM. First Observation of Negative Capacitance in Molecular Ferroelectric Thin Films. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2307518. [PMID: 38041802 DOI: 10.1002/adma.202307518] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/27/2023] [Revised: 11/22/2023] [Indexed: 12/03/2023]
Abstract
On the path of persisting Moore's Law, one of the biggest obstacles is the "Boltzmann tyranny," which defines the lower limit of power consumption of individual transistors. Negative capacitance (NC) in ferroelectrics could provide a solution and has garnered significant attention in the fields of nanoelectronics, materials science, and solid-state physics. Molecular ferroelectrics, as an integral part of ferroelectrics, have developed rapidly in terms of both performance and functionality, with their inherent advantages such as easy fabrication, mechanical flexibility, low processing temperature, and structural tunability. However, studies on the NC in molecular ferroelectrics are limited. In this study, the focus is centered on the fabricated high-quality thin films of trimethylchloromethyl ammonium trichlorocadmium(II), and a pioneering investigation on their NC responses is conducted. The findings demonstrate that the NC exhibited by molecular ferroelectrics is comparable to that of conventional HfO2 -based ferroelectrics. This underscores the potential of molecular material systems for next-generation electronic devices.
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Affiliation(s)
- Zi-Jie Feng
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing, 211189, China
| | - Yu-An Xiong
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing, 211189, China
| | - Wen-Cong Sun
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing, 211189, China
| | - Tai-Ting Sha
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing, 211189, China
| | - Jie Yao
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing, 211189, China
| | - Qiang Pan
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing, 211189, China
| | - Huihui Hu
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing, 211189, China
| | - Shuai Dong
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing, 211189, China
| | - Ren-Gen Xiong
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing, 211189, China
| | - Yu-Meng You
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing, 211189, China
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21
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Luo W, Akbarzadeh A, Nahas Y, Prokhorenko S, Bellaiche L. Quantum criticality at cryogenic melting of polar bubble lattices. Nat Commun 2023; 14:7874. [PMID: 38036499 PMCID: PMC10689468 DOI: 10.1038/s41467-023-43598-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/19/2023] [Accepted: 11/13/2023] [Indexed: 12/02/2023] Open
Abstract
Quantum fluctuations (QFs) caused by zero-point phonon vibrations (ZPPVs) are known to prevent the occurrence of polar phases in bulk incipient ferroelectrics down to 0 K. On the other hand, little is known about the effects of QFs on the recently discovered topological patterns in ferroelectric nanostructures. Here, by using an atomistic effective Hamiltonian within classical Monte Carlo (CMC) and path integral quantum Monte Carlo (PI-QMC), we unveil how QFs affect the topology of several dipolar phases in ultrathin Pb(Zr0.4Ti0.6)O3 (PZT) films. In particular, our PI-QMC simulations show that the ZPPVs do not suppress polar patterns but rather stabilize the labyrinth, bimeron and bubble phases within a wider range of bias field magnitudes. Moreover, we reveal that quantum fluctuations induce a quantum critical point (QCP) separating a hexagonal bubble lattice from a liquid-like state characterized by spontaneous motion, creation and annihilation of polar bubbles at cryogenic temperatures. Finally, we show that the discovered quantum melting is associated with anomalous physical response, as, e.g., demonstrated by a negative longitudinal piezoelectric coefficient.
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Affiliation(s)
- Wei Luo
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, 72701, USA
| | - Alireza Akbarzadeh
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, 72701, USA
- Science, Engineering, and Geosciences, Lonestar College, 9191 Barker Cypress Road, Cypress, TX, 77433, USA
| | - Yousra Nahas
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, 72701, USA
| | - Sergei Prokhorenko
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, 72701, USA.
| | - Laurent Bellaiche
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, 72701, USA.
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22
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Jung S, Pizzolitto C, Biasi P, Dauenhauer PJ, Birol T. Programmable catalysis by support polarization: elucidating and breaking scaling relations. Nat Commun 2023; 14:7795. [PMID: 38016999 PMCID: PMC10684597 DOI: 10.1038/s41467-023-43641-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/24/2023] [Accepted: 11/15/2023] [Indexed: 11/30/2023] Open
Abstract
The Sabatier principle and the scaling relations have been widely used to search for and screen new catalysts in the field of catalysis. However, these powerful tools can also serve as limitations of catalyst control and breakthrough. To overcome this challenge, this work proposes an efficient method of studying catalyst control by support polarization from first-principles. The results demonstrate that the properties of catalysts are determined by support polarization, irrespective of the magnitude of spontaneous polarization of support. The approach enables elucidating the scaling relations between binding energies at various polarization values of support. Moreover, we observe the breakdown of scaling relations for the surface controlled by support polarization. By studying the surface electronic structure and decomposing the induced charge into contributions from different atoms and orbitals, we identify the inherent structural property of the interface that leads to the breaking of the scaling relations. Specifically, the displacements of the underlying oxide support impose its symmetry on the catalyst, causing the scaling relations between different adsorption sites to break.
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Affiliation(s)
- Seongjoo Jung
- Department of Chemical Engineering & Materials Science, University of Minnesota, 421 Washington Ave. SE, Minneapolis, MN, 55455, USA
| | | | | | - Paul J Dauenhauer
- Department of Chemical Engineering & Materials Science, University of Minnesota, 421 Washington Ave. SE, Minneapolis, MN, 55455, USA
- Center for Programmable Energy Catalysis (CPEC), University of Minnesota, 421 Washington Ave. SE, Minneapolis, MN, 55455, USA
| | - Turan Birol
- Department of Chemical Engineering & Materials Science, University of Minnesota, 421 Washington Ave. SE, Minneapolis, MN, 55455, USA.
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23
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Wang Y, Liu S, Luo Z, Gan H, Wang H, Li J, Du X, Zhao H, Shen S, Yin Y, Li X. Ultralow Subthreshold Swing of a MOSFET Caused by Ferroelectric Polarization Reversal of Hf 0.5Zr 0.5O 2 Thin Films. ACS APPLIED MATERIALS & INTERFACES 2023; 15:42764-42773. [PMID: 37655492 DOI: 10.1021/acsami.3c08163] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/02/2023]
Abstract
The emergence of complementary metal-oxide semiconductor (CMOS)-compatible HfO2-based ferroelectric materials provides a promising way to achieve ferroelectric field-effect transistors (FeFETs) with a steep subthreshold swing (SS) reduced to below the Boltzmann thermodynamics limit (∼60 mV/dec at room temperature), which has important implications for lowering power consumption. In this work, a metal-oxide-semiconductor field-effect transistor (MOSFET) is connected with Hf0.5Zr0.5O2 (HZO)-based ferroelectric capacitors with different capacitances. By adjusting the capacitance of ferroelectric capacitors, an ultralow SS of ∼0.34 mV/dec in HfO2-based FeFETs can be achieved. More interestingly, by designing the sweeping voltage sequences, the SS can be adjusted to be 0 mV/dec with the drain current ranging over six orders of magnitude, and the threshold voltage for turning on the MOSFET can be further reduced. The manipulated SS could be attributed to the evolution of ferroelectric switching. Our work contributes to understanding the origin of ultralow SS in ferroelectric MOSFETs and the realization of low-power devices.
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Affiliation(s)
- Yuchen Wang
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics, and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei 230026, China
| | - Si Liu
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics, and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei 230026, China
| | - Zhen Luo
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics, and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei 230026, China
| | - Hui Gan
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics, and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei 230026, China
| | - He Wang
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics, and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei 230026, China
| | - Jiachen Li
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics, and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei 230026, China
| | - Xinzhe Du
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics, and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei 230026, China
| | - Haoyu Zhao
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics, and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei 230026, China
| | - Shengchun Shen
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics, and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei 230026, China
| | - Yuewei Yin
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics, and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei 230026, China
| | - Xiaoguang Li
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics, and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei 230026, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
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24
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Guo X, Wang F, Ma Z, Shan X, Lin X, Ji Y, Zhao X, Feng Y, Han Y, Xie Y, Song Z, Zhang K. Optimization of Subthreshold Swing and Hysteresis in Hf 0.5Zr 0.5O 2-Based MoS 2 Negative Capacitance Field-Effect Transistors by Modulating Capacitance Matching. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37339447 DOI: 10.1021/acsami.3c04595] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/22/2023]
Abstract
Negative capacitance field effect transistors made of Hf0.5Zr0.5O2 (HZO) are one of the most promising candidates for low-power-density devices because of the extremely steep subthreshold swing and high open-state currents resulting from the addition of ferroelectric materials in the gate dielectric layer. In this paper, HZO thin films were prepared by magnetron sputtering combined with rapid thermal annealing. Their ferroelectric properties were adjusted by changing the annealing temperature and the thickness of HZO. Two-dimensional MoS2 back-gate negative capacitance field-effect transistors (NCFETs) based on HZO were prepared as well. Different annealing temperatures, thicknesses of HZO thin films, and Al2O3 thicknesses were studied to achieve optimal capacitance matching, aiming to reduce both the subthreshold swing of the transistor and the hysteresis of the NCFET. The NCFET exhibits a minimum subthreshold swing as low as 27.9 mV/decade, negligible hysteresis (∼20 mV), and the ION/IOFF of up to 1.58 × 107. Moreover, a negative drain-induced barrier lowering effect and a negative differential resistance effect have been observed. This steep-slope transistor is compatible with standard CMOS manufacturing processes and attractive for 2D logic and sensor applications as well as future energy-efficient nanoelectronic devices with scaled power supplies.
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Affiliation(s)
- Xiaowei Guo
- Tianjin Key Laboratory of Film Electronic and Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
| | - Fang Wang
- Tianjin Key Laboratory of Film Electronic and Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
| | - Zexia Ma
- Tianjin Key Laboratory of Film Electronic and Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
| | - Xin Shan
- Tianjin Key Laboratory of Film Electronic and Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
| | - Xin Lin
- Tianjin Key Laboratory of Film Electronic and Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
| | - Yujing Ji
- Tianjin Key Laboratory of Film Electronic and Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
| | - Xuanyu Zhao
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Yulin Feng
- Key Laboratory of the Ministry of Education for Optoelectronic Measurement Technology and Instrument, Beijing Information Science and Technology University, Beijing 100192, China
| | - Yemei Han
- Tianjin Key Laboratory of Film Electronic and Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
| | - Yangyang Xie
- Tianjin Key Laboratory of Film Electronic and Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
| | - Zhitang Song
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Kailiang Zhang
- Tianjin Key Laboratory of Film Electronic and Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
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25
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Shi S, Liang Y, Lv W, Gu M, Wang G. A negative capacitor emulator circuit and its application in chaotic circuits. CHAOS (WOODBURY, N.Y.) 2023; 33:2893147. [PMID: 37229636 DOI: 10.1063/5.0142512] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/14/2023] [Accepted: 04/28/2023] [Indexed: 05/27/2023]
Abstract
Negative capacitance usually exists in ferroelectric materials, and its instinct nonlinearity and negative capacitance render its potential applications. To date, the single negative capacitance device is commonly unavailable. Hence, it is necessary to build a negative capacitor emulator in hardware for further investigating its electrical characteristics and applications. Based on a simple negative capacitor mathematical model, an emulator circuit that can mimic the S-shaped voltage-charge characteristics of the negative capacitor is proposed. The proposed emulator is composed of commercial off-the-shelf components, such as operational amplifiers, resistors, and capacitors. Based on the negative capacitor, we design a new chaotic circuit that can generate the single-period, double-period, single-scroll chaos, double-scroll chaos, and so on. The theoretical calculation, simulation analysis, and hardware experimental verification manifest that this proposed emulator circuit can be operated as a negative capacitor and applied in the chaotic circuit.
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Affiliation(s)
- Shuyu Shi
- Institute of Modern Circuits and Intelligent Information, Hangzhou Dianzi University, Hangzhou 310018, China
| | - Yan Liang
- Institute of Modern Circuits and Intelligent Information, Hangzhou Dianzi University, Hangzhou 310018, China
| | - Weifeng Lv
- Institute of Modern Circuits and Intelligent Information, Hangzhou Dianzi University, Hangzhou 310018, China
| | - Meiyuan Gu
- Institute of Modern Circuits and Intelligent Information, Hangzhou Dianzi University, Hangzhou 310018, China
| | - Guangyi Wang
- Institute of Modern Circuits and Intelligent Information, Hangzhou Dianzi University, Hangzhou 310018, China
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26
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Yang S, Liu K, Xu Y, Liu L, Li H, Zhai T. Gate Dielectrics Integration for 2D Electronics: Challenges, Advances, and Outlook. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2207901. [PMID: 36226584 DOI: 10.1002/adma.202207901] [Citation(s) in RCA: 18] [Impact Index Per Article: 18.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/30/2022] [Revised: 09/28/2022] [Indexed: 05/05/2023]
Abstract
2D semiconductors have emerged both as an ideal platform for fundamental studies and as promising channel materials in beyond-silicon field-effect-transistors due to their outstanding electrical properties and exceptional tunability via external field. However, the lack of proper dielectrics for 2D semiconductors has become a major roadblock for their further development toward practical applications. The prominent issues between conventional 3D dielectrics and 2D semiconductors arise from the integration and interface quality, where defect states and imperfections lead to dramatic deterioration of device performance. In this review article, the root causes of such issues are briefly analyzed and recent advances on some possible solutions, including various approaches of adapting conventional dielectrics to 2D semiconductors, and the development of novel dielectrics with van der Waals surface toward high-performance 2D electronics are summarized. Then, in the perspective, the requirements of ideal dielectrics for state-of-the-art 2D devices are outlined and an outlook for their future development is provided.
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Affiliation(s)
- Sijie Yang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Kailang Liu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yongshan Xu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Lixin Liu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Huiqiao Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
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27
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Mougkogiannis P, Phillips N, Adamatzky A. Transfer functions of proteinoid microspheres. Biosystems 2023; 227-228:104892. [PMID: 37076037 DOI: 10.1016/j.biosystems.2023.104892] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/18/2023] [Revised: 04/05/2023] [Accepted: 04/05/2023] [Indexed: 04/21/2023]
Abstract
Proteinoids, or thermal proteins, are inorganic entities formed by heating amino acids to their melting point and commencing polymerisation to form polymeric chains. Typically, their diameters range from 1μm to 10μm. Some amino acids incorporated into proteinoid chains are more hydrophobic than others, leading proteinoids to cluster together when they are present in aqueous solutions at specific concentrations, allowing them to grow into microspheres. The peculiar structure of proteinoids composed of linked amino acids endows them with unique properties, including action-potential like spiking of electrical potential. These unique properties make ensembles of proteinoid microspheres a promising substrate for designing future artificial brains and unconventional computing devices. To evaluate a potential of proteinoid microspheres for unconventional electronic devices we measure and analyse the data-transfer capacities of proteinoid microspheres. In experimental laboratory conditions we demonstrate that the transfer function of proteinoids microspheres is a nontrivial phenomenon, which might be due to the wide range of proteinoid shapes, sizes, and structures.
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Affiliation(s)
| | - Neil Phillips
- Unconventional Computing Laboratory, University of the West of England, Bristol, UK
| | - Andrew Adamatzky
- Unconventional Computing Laboratory, University of the West of England, Bristol, UK
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28
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Luo Y, Wang Z, Chen Y, Qin M, Fan Z, Zeng M, Zhou G, Lu X, Gao X, Chen D, Liu JM. Strain Tuning of Negative Capacitance in Ferroelectric KNbO 3 Thin Films. ACS APPLIED MATERIALS & INTERFACES 2023; 15:16902-16909. [PMID: 36966506 DOI: 10.1021/acsami.3c01866] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Ferroelectrics with negative capacitance effects can amplify the gate voltage in field-effect transistors to achieve low power operation beyond the limits of Boltzmann's Tyranny. The reduction of power consumption depends on the capacitance matching between the ferroelectric layer and gate dielectrics, which can be well controlled by adjusting the negative capacitance effect in ferroelectrics. However, it is a great challenge to experimentally tune the negative capacitance effect. Here, the observation of the tunable negative capacitance effect in ferroelectric KNbO3 through strain engineering is demonstrated. The magnitude of the voltage reduction and negative slope in polarization-electric field (P-E) curves as the symbol of negative capacitance effects can be controlled by imposing various epitaxial strains. The adjustment of the negative curvature region in the polarization-energy landscape under different strain states is responsible for the tunable negative capacitance. Our work paves the way for fabricating low-power devices and further reducing energy consumption in electronics.
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Affiliation(s)
- Yongjian Luo
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Zhen Wang
- Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100049, China
| | - Yu Chen
- Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
| | - Minghui Qin
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Zhen Fan
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Min Zeng
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Guofu Zhou
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Xubing Lu
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Xingsen Gao
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Deyang Chen
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Jun-Ming Liu
- Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
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29
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Liu L, Lei L, Lu X, Xia Y, Wu Z, Huang F. Direct Measurement of Negative Capacitance in Ferroelectric/Semiconductor Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2023; 15:10175-10181. [PMID: 36754852 DOI: 10.1021/acsami.2c19930] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Negative capacitance (NC) is now an attractive research topic owing to its potential applications. For better integration, investigation about the phenomenon and mechanism of NC in ferroelectric materials on semiconductor substrates is important. In this work, ferroelectric BaTiO3 (BTO) films are deposited on the low-resistance Si(100) substrates to constitute Pt/BTO/p-Si/Pt samples with the metal/ferroelectric/semiconductor/metal (MFSM) structure, on which NC are directly measured at low frequencies with a large DC bias. Because of the unique asymmetric interface, the NC value is tunable by the polarity and magnitude of the DC bias. Analysis based on the impedance and ferroelectric characteristics reveals that, in addition to the displacement current related to the electric polarization, there is also relaxation current caused by interface charge injection and oxygen vacancy migration. This work provides another idea for studying miniaturized and low-energy devices utilizing NC, which is of great significance for the development of silicon-based ferroelectric devices.
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Affiliation(s)
- Lin Liu
- National Laboratory of Solid State Microstructures and Physics School, Nanjing University, Nanjing 210093, China
| | - Lin Lei
- National Laboratory of Solid State Microstructures and Physics School, Nanjing University, Nanjing 210093, China
| | - Xiaomei Lu
- National Laboratory of Solid State Microstructures and Physics School, Nanjing University, Nanjing 210093, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Yinsong Xia
- National Laboratory of Solid State Microstructures and Physics School, Nanjing University, Nanjing 210093, China
| | - Zijing Wu
- National Laboratory of Solid State Microstructures and Physics School, Nanjing University, Nanjing 210093, China
| | - Fengzhen Huang
- National Laboratory of Solid State Microstructures and Physics School, Nanjing University, Nanjing 210093, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
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30
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Shen Y, Dong Z, Sun Y, Guo H, Wu F, Li X, Tang J, Liu J, Wu X, Tian H, Ren TL. The Trend of 2D Transistors toward Integrated Circuits: Scaling Down and New Mechanisms. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2201916. [PMID: 35535757 DOI: 10.1002/adma.202201916] [Citation(s) in RCA: 16] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/28/2022] [Revised: 04/12/2022] [Indexed: 06/14/2023]
Abstract
2D transition metal chalcogenide (TMDC) materials, such as MoS2 , have recently attracted considerable research interest in the context of their use in ultrascaled devices owing to their excellent electronic properties. Microprocessors and neural network circuits based on MoS2 have been developed at a large scale but still do not have an advantage over silicon in terms of their integrated density. In this study, the current structures, contact engineering, and doping methods for 2D TMDC materials for the scaling-down process and performance optimization are reviewed. Devices are introduced according to a new mechanism to provide the comprehensive prospects for the use of MoS2 beyond the traditional complementary-metal-oxide semiconductor in order to summarize obstacles to the goal of developing high-density and low-power integrated circuits (ICs). Finally, prospects for the use of MoS2 in large-scale ICs from the perspectives of the material, system performance, and application to nonlogic functionalities such as sensor circuits and analogous circuits, are briefly analyzed. The latter issue is along the direction of "more than Moore" research.
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Affiliation(s)
- Yang Shen
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist) School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Zuoyuan Dong
- Shanghai Key Laboratory of Multidimensional Information Processing, School of Communication and Electronic Engineering, East China Normal University, Shanghai, 200241, China
| | - Yabin Sun
- Shanghai Key Laboratory of Multidimensional Information Processing, School of Communication and Electronic Engineering, East China Normal University, Shanghai, 200241, China
| | - Hao Guo
- Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, School of Instrument and Electronics, North University of China, Taiyuan, Shanxi, 030051, China
| | - Fan Wu
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist) School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Xianglong Li
- Shanghai Key Laboratory of Multidimensional Information Processing, School of Communication and Electronic Engineering, East China Normal University, Shanghai, 200241, China
| | - Jun Tang
- Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, School of Instrument and Electronics, North University of China, Taiyuan, Shanxi, 030051, China
| | - Jun Liu
- Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, School of Instrument and Electronics, North University of China, Taiyuan, Shanxi, 030051, China
| | - Xing Wu
- Shanghai Key Laboratory of Multidimensional Information Processing, School of Communication and Electronic Engineering, East China Normal University, Shanghai, 200241, China
| | - He Tian
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist) School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Tian-Ling Ren
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist) School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
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31
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Lv M, Sun X, Chen Y, Taniguchi T, Watanabe K, Wu M, Wang J, Xue J. Spatially Resolved Polarization Manipulation of Ferroelectricity in Twisted hBN. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2203990. [PMID: 36271514 DOI: 10.1002/adma.202203990] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/03/2022] [Revised: 09/29/2022] [Indexed: 06/16/2023]
Abstract
Robust room-temperature interfacial ferroelectricity has been formed in the 2D limit by simply twisting two atomic layers of non-ferroelectric hexagonal boron nitride (hBN). A thorough understanding of this newly discovered ferroelectric system is required. Here, twisted hBN is used as a tunneling junction and it is studied at the nanometer scale using conductive atomic force microscopy. Three properties unique to this system are discovered. First, the polarization dependence of the tunneling resistance contrasts with the conventional theory. Second, the ferroelectric domains can be controlled using mechanical stress, highlighting the original meaning of the emergent "slidetronics". Third, ferroelectric hysteresis is highly spatially dependent. The hysteresis is symmetric at the domain walls. A few nanometers away, the hysteresis shifts completely to the positive or negative side, depending on the original polarization. These findings reveal the unconventional ferroelectricity in this 2D system.
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Affiliation(s)
- Ming Lv
- School of Physical Science and Technology, ShanghaiTech University, Pudong, Shanghai, 201210, China
| | - Xinzuo Sun
- School of Physical Science and Technology, ShanghaiTech University, Pudong, Shanghai, 201210, China
| | - Yan Chen
- Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Hongkou, Shanghai, 200083, China
- Frontier Institute of Chip and System, Institute of Optoelectronics, Shanghai Frontier Base of Intelligent Optoelectronics and Perception, Fudan University, Shanghai, 200438, China
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Menghao Wu
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
| | - Jianlu Wang
- Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Hongkou, Shanghai, 200083, China
- Frontier Institute of Chip and System, Institute of Optoelectronics, Shanghai Frontier Base of Intelligent Optoelectronics and Perception, Fudan University, Shanghai, 200438, China
| | - Jiamin Xue
- School of Physical Science and Technology, ShanghaiTech University, Pudong, Shanghai, 201210, China
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32
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Lee S, Lee Y, Kim T, Kim G, Eom T, Shin H, Jeong Y, Jeon S. Steep-Slope Transistor with an Imprinted Antiferroelectric Film. ACS APPLIED MATERIALS & INTERFACES 2022; 14:53019-53026. [PMID: 36394287 DOI: 10.1021/acsami.2c10610] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
The effect of negative capacitance (NC), which can internally boost the voltage applied to a transistor, has been considered to overcome the fundamental Boltzmann limit of a transistor. To stabilize the NC effect, the dielectric (DE) must be integrated into a heterostructure with a ferroelectric (FE) film. However, in a multidomain hafnia, the charge boosting effect is reduced owing to a lowering of the depolarization field originating from the stray field at each domain, and simultaneously, the operating voltage increases owing to the voltage division at the DE. Here, we demonstrate core approaches to the gate stack of energy-efficient device technology using a transient NC. Electrical measurements of the transistor with imprinted antiferroelectric and high CDE/CFE structures exhibit low subthreshold slopes below 20 mV/dec, a low voltage operation of 0.5 V, a fast operation of 20 ns, hysteresis-free Id-Vg, and high endurance characteristics of 1012 cycles. We expect that this will lead to the rapid implementation of the NC effect in high-speed switching device applications with significantly improved energy efficiency.
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Affiliation(s)
- Sangho Lee
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST)291 Daehak-ro, Yuseong-gu, Daejeon34141, Korea
| | - Yongsun Lee
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST)291 Daehak-ro, Yuseong-gu, Daejeon34141, Korea
| | - Taeho Kim
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST)291 Daehak-ro, Yuseong-gu, Daejeon34141, Korea
| | - Giuk Kim
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST)291 Daehak-ro, Yuseong-gu, Daejeon34141, Korea
| | - Taehyong Eom
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST)291 Daehak-ro, Yuseong-gu, Daejeon34141, Korea
| | - Hunbeom Shin
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST)291 Daehak-ro, Yuseong-gu, Daejeon34141, Korea
| | - Yeongseok Jeong
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST)291 Daehak-ro, Yuseong-gu, Daejeon34141, Korea
| | - Sanghun Jeon
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST)291 Daehak-ro, Yuseong-gu, Daejeon34141, Korea
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33
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Zhou S, Zhang J, Rappe AM. Strain-induced antipolar phase in hafnia stabilizes robust thin-film ferroelectricity. SCIENCE ADVANCES 2022; 8:eadd5953. [PMID: 36427321 PMCID: PMC9699663 DOI: 10.1126/sciadv.add5953] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/21/2022] [Accepted: 10/07/2022] [Indexed: 06/16/2023]
Abstract
Hafnia (HfO2) is a promising candidate for next-generation ferroelectric devices due to its robust ferroelectricity at reduced dimensions and its compatibility with silicon technology. Unfortunately, the origin of robust ferroelectricity and the underlying phase transition mechanism in HfO2 remain elusive. Here, we show that its ferroelectricity arises from two phase transitions, where the primary phase transition to antipolar phase is activated by tensile strain. Above a threshold antipolar mode amplitude, a strong cooperative polar-antipolar coupling enables a second ferroelectric phase transition superimposed on the antipolar phase. Because the antipolar mode is not susceptible to depolarization, this polar-antipolar coupling stabilizes the polarization against depolarization effects. Our results demonstrate that tensile strain and polar-antipolar coupling are the origins of ferroelectricity in HfO2 and provide a previously unknown mechanism against depolarization other than conventional improper ferroelectricity.
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34
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Im KS, Shin S, Jang CH, Cha HY. Low-Frequency Noise Characteristics in HfO 2-Based Metal-Ferroelectric-Metal Capacitors. MATERIALS (BASEL, SWITZERLAND) 2022; 15:7475. [PMID: 36363066 PMCID: PMC9654821 DOI: 10.3390/ma15217475] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/26/2022] [Revised: 10/19/2022] [Accepted: 10/21/2022] [Indexed: 06/16/2023]
Abstract
The transport mechanism of HfO2-based metal-ferroelectric-metal (MFM) capacitors was investigated using low-frequency noise (LFN) measurements for the first time. The current-voltage measurement results revealed that the leakage behavior of the fabricated MFM capacitor was caused by the trap-related Poole-Frenkel transport mechanism, which was confirmed by the LFN measurements. The current noise power spectral densities (SI) obtained from the LFN measurements followed 1/f noise shapes and exhibited a constant electric field (E) × SI/I2 noise behavior. No polarization dependency was observed in the transport characteristics of the MFM capacitor owing to its structural symmetry.
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Affiliation(s)
- Ki-Sik Im
- Department of Green Semiconductor System, Daegu Campus, Korea Polytechnics, Daegu 41765, Korea
| | - Seungheon Shin
- School of Electronic and Electrical Engineering, Hongik University, Seoul 04066, Korea
| | - Chan-Hee Jang
- School of Electronic and Electrical Engineering, Hongik University, Seoul 04066, Korea
| | - Ho-Young Cha
- School of Electronic and Electrical Engineering, Hongik University, Seoul 04066, Korea
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35
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Sugathan S, Thekkepat K, Bandyopadhyay S, Kim J, Cha PR. A phase field model combined with a genetic algorithm for polycrystalline hafnium zirconium oxide ferroelectrics. NANOSCALE 2022; 14:14997-15009. [PMID: 36193801 DOI: 10.1039/d2nr02678c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Ferroelectric hafnium zirconium oxide (HZO) thin films show significant promise for applications in ferroelectric random-access memory devices, ferroelectric field-effect transistors, and ferroelectric tunneling junctions. However, there are shortcomings in understanding ferroelectric switching, which is crucial in the operation of these devices. Here a computational model based on the phase field method is developed to simulate the switching behavior of polycrystalline HZO thin films. Furthermore, we introduce a novel approach to optimize the effective Landau coefficients describing the free energy of HZO by combining the phase field model with a genetic algorithm. We validate the model by accurately simulating switching curves for HZO thin films with different ferroelectric phase fractions. The simulated domain dynamics during switching also shows amazing similarity to the available experimental observations. The present work also provides fundamental insights into enhancing the ferroelectricity in HZO thin films by controlling the grain morphology and crystalline texture. It can potentially be extended to improve the ferroelectric properties of other hafnia based thin films.
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Affiliation(s)
- Sandeep Sugathan
- School of Advanced Materials Engineering, Kookmin University, Seoul 02707, Republic of Korea.
| | - Krishnamohan Thekkepat
- Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
- Division of Nano & Information Technology, KIST School, Korea University of Science and Technology, Seoul 02792, Republic of Korea
| | - Soumya Bandyopadhyay
- School of Advanced Materials Engineering, Kookmin University, Seoul 02707, Republic of Korea.
| | - Jiyoung Kim
- Department of Materials Science and Engineering, The University of Texas at Dallas, 800 West Campbell Road, Richardson, Texas 75080, USA
| | - Pil-Ryung Cha
- School of Advanced Materials Engineering, Kookmin University, Seoul 02707, Republic of Korea.
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36
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Zhang X, Huang A, Xiao Z, Wang M, Zhang J, Chu PK. Ambipolar steep-slope nanotransistors with Janus MoSSe/graphene heterostructures. NANOTECHNOLOGY 2022; 34:015203. [PMID: 36191490 DOI: 10.1088/1361-6528/ac96f5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/11/2022] [Accepted: 10/03/2022] [Indexed: 06/16/2023]
Abstract
The transfer characteristics and switching mechanism of the steep-slope transistor composed of the graphene/Janus MoSSe heterostructure are investigated by quantum transport calculation. The Schottky barrier height at the Gr/SMoSe interface and tunneling width between the channel and drain can be tuned by the gate voltage, so that the device exhibits ambipolar switching with two minima in the subthreshold swing slope. 34 and 29 mV decade-1subthreshold swings can be achieved and the on/off ratios are over 106and 108for the different switching mechanisms. The device provides a solution and guidance for the future design of low-power, high-performance devices.
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Affiliation(s)
- Xinjiang Zhang
- School of Physics, Beihang University, Beijing 100191, People's Republic of China
| | - Anping Huang
- School of Physics, Beihang University, Beijing 100191, People's Republic of China
| | - Zhisong Xiao
- School of Physics, Beihang University, Beijing 100191, People's Republic of China
| | - Mei Wang
- School of Physics, Beihang University, Beijing 100191, People's Republic of China
| | - Jing Zhang
- Microelectronics Department, North China University of Technology, Beijing 100041, People's Republic of China
| | - Paul K Chu
- Department of Physics, Department of Materials Science and Engineering, and Department of Biomedical Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, People's Republic of China
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37
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Jin T, Mao J, Gao J, Han C, Loh KP, Wee ATS, Chen W. Ferroelectrics-Integrated Two-Dimensional Devices toward Next-Generation Electronics. ACS NANO 2022; 16:13595-13611. [PMID: 36099580 DOI: 10.1021/acsnano.2c07281] [Citation(s) in RCA: 23] [Impact Index Per Article: 11.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Ferroelectric materials play an important role in a wide spectrum of semiconductor technologies and device applications. Two-dimensional (2D) van der Waals (vdW) ferroelectrics with surface-insensitive ferroelectricity that is significantly different from their traditional bulk counterparts have further inspired intensive interest. Integration of ferroelectrics into 2D-layered-material-based devices is expected to offer intriguing working principles and add desired functionalities for next-generation electronics. Herein, fundamental properties of ferroelectric materials that are compatible with 2D devices are introduced, followed by a critical review of recent advances on the integration of ferroelectrics into 2D devices. Representative device architectures and corresponding working mechanisms are discussed, such as ferroelectrics/2D semiconductor heterostructures, 2D ferroelectric tunnel junctions, and 2D ferroelectric diodes. By leveraging the favorable properties of ferroelectrics, a variety of functional 2D devices including ferroelectric-gated negative capacitance field-effect transistors, programmable devices, nonvolatile memories, and neuromorphic devices are highlighted, where the application of 2D vdW ferroelectrics is particularly emphasized. This review provides a comprehensive understanding of ferroelectrics-integrated 2D devices and discusses the challenges of applying them into commercial electronic circuits.
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Affiliation(s)
- Tengyu Jin
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou 350207, P. R. China
- Department of Physics, National University of Singapore, Singapore 117542, Singapore
| | - Jingyu Mao
- Department of Physics, National University of Singapore, Singapore 117542, Singapore
| | - Jing Gao
- Department of Physics, National University of Singapore, Singapore 117542, Singapore
| | - Cheng Han
- SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Kian Ping Loh
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou 350207, P. R. China
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Andrew T S Wee
- Department of Physics, National University of Singapore, Singapore 117542, Singapore
| | - Wei Chen
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou 350207, P. R. China
- Department of Physics, National University of Singapore, Singapore 117542, Singapore
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
- National University of Singapore (Suzhou) Research Institute, 377 Lin Quan Street, Suzhou Industrial Park, Suzhou 215123, P. R. China
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38
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Gatel C, Serra R, Gruel K, Masseboeuf A, Chapuis L, Cours R, Zhang L, Warot-Fonrose B, Hÿtch MJ. Extended Charge Layers in Metal-Oxide-Semiconductor Nanocapacitors Revealed by Operando Electron Holography. PHYSICAL REVIEW LETTERS 2022; 129:137701. [PMID: 36206432 DOI: 10.1103/physrevlett.129.137701] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/26/2022] [Accepted: 08/22/2022] [Indexed: 06/16/2023]
Abstract
The metal-oxide-semiconductor (MOS) capacitor is one of the fundamental electrical components used in integrated circuits. While much effort is currently being made to integrate new dielectric or ferroelectric materials, capacitors of silicon dioxide on silicon remain the most prevalent. It is perhaps surprising therefore that the electric field within such a capacitor has never been measured, or mapped out, at the nanoscale. Here we present results from operando electron holography experiments showing the electric potential across a working MOS nanocapacitor with unprecedented sensitivity and reveal unexpected charging of the dielectric material bordering the electrodes.
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Affiliation(s)
- C Gatel
- CEMES, Université de Toulouse, CNRS, 29 rue Jeanne Marvig, 31055 Toulouse, France
| | - R Serra
- CEMES, Université de Toulouse, CNRS, 29 rue Jeanne Marvig, 31055 Toulouse, France
| | - K Gruel
- CEMES, Université de Toulouse, CNRS, 29 rue Jeanne Marvig, 31055 Toulouse, France
| | - A Masseboeuf
- CEMES, Université de Toulouse, CNRS, 29 rue Jeanne Marvig, 31055 Toulouse, France
| | - L Chapuis
- CEMES, Université de Toulouse, CNRS, 29 rue Jeanne Marvig, 31055 Toulouse, France
| | - R Cours
- CEMES, Université de Toulouse, CNRS, 29 rue Jeanne Marvig, 31055 Toulouse, France
| | - L Zhang
- CEMES, Université de Toulouse, CNRS, 29 rue Jeanne Marvig, 31055 Toulouse, France
| | - B Warot-Fonrose
- CEMES, Université de Toulouse, CNRS, 29 rue Jeanne Marvig, 31055 Toulouse, France
| | - M J Hÿtch
- CEMES, Université de Toulouse, CNRS, 29 rue Jeanne Marvig, 31055 Toulouse, France
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39
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Wang L, Zhu M, Shao Y, Zhao Y, Wei C, Gao L, Bao Y. Smart Sensing Multifunctionalities Based on Barium Strontium Titanate Thin Films. SENSORS (BASEL, SWITZERLAND) 2022; 22:7183. [PMID: 36236285 PMCID: PMC9573459 DOI: 10.3390/s22197183] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/30/2022] [Revised: 09/17/2022] [Accepted: 09/20/2022] [Indexed: 06/16/2023]
Abstract
Sensors that have low power consumption, high scalability and the ability of rapidly detecting multitudinous external stimulus are of great value in cyber-physical interactive applications. Herein, we reported the fabrication of ferroelectric barium strontium titanate ((Ba70Sr30)TiO3, BST) thin films on silicon substrates by magnetron sputtering. The as-grown BST films have a pure perovskite structure and exhibit excellent ferroelectric characteristics, such as a remnant polarization of 2.4 μC/cm2, a ferro-to-paraelectric (tetragonal-to-cubic) phase transition temperature of 31.2 °C, and a broad optical bandgap of 3.58 eV. Capacitor-based sensors made from the BST films have shown an outstanding average sensitivity of 0.10 mV·Pa-1 in the 10-80 kPa regime and work extremely steadily over 1000 cycles. More importantly, utilizing the Pockels effect, optical manipulation in BST can be also realized by a smaller bias and its electro-optic coefficient reff is estimated to be 83.5 pmV-1, which is 2.6 times larger than in the current standard material (LiNbO3) for electro-optical devices. Our work established BST thin film as a powerful design paradigm toward on-chip integrations with diverse electronics into sensors via CMOS-comparable technique.
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Affiliation(s)
- Linghua Wang
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
| | - Minmin Zhu
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
- FZU-Jinjiang Joint Institute of Microelectronics, Jinjiang Science and Education Park, Fuzhou University, Jinjiang 362200, China
| | - Yong Shao
- FZU-Jinjiang Joint Institute of Microelectronics, Jinjiang Science and Education Park, Fuzhou University, Jinjiang 362200, China
| | - Yida Zhao
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Can Wei
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
| | - Langfeng Gao
- FZU-Jinjiang Joint Institute of Microelectronics, Jinjiang Science and Education Park, Fuzhou University, Jinjiang 362200, China
| | - Yiping Bao
- Academy of Hi-Tech Research, Hunan Institute of Traffic Engineering, Hengyang 421099, China
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40
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Hu YQ, Liu NT, Lao J, Liang RH, Deng X, Guan Z, Chen BB, Peng H, Zhong N, Xiang PH, Duan CG. Ultrahigh Ferroelectric and Piezoelectric Properties in BiFeO 3-BaTiO 3 Epitaxial Films Near Morphotropic Phase Boundary. ACS APPLIED MATERIALS & INTERFACES 2022; 14:36825-36833. [PMID: 35929806 DOI: 10.1021/acsami.2c09062] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Ferroelectric solid solutions with composition near the morphotropic phase boundary (MPB) have gained extensive attention recently due to their excellent ferroelectric and piezoelectric properties. Here, we have demonstrated a strategy to realize the controllable preparation of BiFeO3-BaTiO3 (BF-BT) epitaxial films near the MPB. A series of high-quality BF-BT films were fabricated by pulsed laser deposition via adjusting oxygen partial pressure (PO2) using a BF-BT ceramic target. A continuous transition from rhombohedral to tetragonal phase was observed upon increasing PO2. Particularly, the film with a pure tetragonal phase exhibited a large remnant polarization of ∼90.6 μC/cm2, while excellent piezoelectric performance with an ultrahigh strain (∼0.48%) was obtained in the film with coexisting rhombohedral and tetragonal phases. The excellent ferroelectric and piezoelectric properties endow the BF-BT system near the MPB with great application prospects in lead-free electronic devices.
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Affiliation(s)
- Yu-Qing Hu
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai 200241, China
| | - Ning-Tao Liu
- Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Jie Lao
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai 200241, China
| | - Rui-Hong Liang
- Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China
| | - Xing Deng
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai 200241, China
| | - Zhao Guan
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai 200241, China
| | - Bin-Bin Chen
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai 200241, China
| | - Hui Peng
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China
| | - Ni Zhong
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China
| | - Ping-Hua Xiang
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China
| | - Chun-Gang Duan
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China
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41
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Banerjee W, Kashir A, Kamba S. Hafnium Oxide (HfO 2 ) - A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2107575. [PMID: 35510954 DOI: 10.1002/smll.202107575] [Citation(s) in RCA: 24] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/26/2022] [Revised: 03/24/2022] [Indexed: 06/14/2023]
Abstract
Hafnium oxide (HfO2 ) is one of the mature high-k dielectrics that has been standing strong in the memory arena over the last two decades. Its dielectric properties have been researched rigorously for the development of flash memory devices. In this review, the application of HfO2 in two main emerging nonvolatile memory technologies is surveyed, namely resistive random access memory and ferroelectric memory. How the properties of HfO2 equip the former to achieve superlative performance with high-speed reliable switching, excellent endurance, and retention is discussed. The parameters to control HfO2 domains are further discussed, which can unleash the ferroelectric properties in memory applications. Finally, the prospect of HfO2 materials in emerging applications, such as high-density memory and neuromorphic devices are examined, and the various challenges of HfO2 -based resistive random access memory and ferroelectric memory devices are addressed with a future outlook.
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Affiliation(s)
- Writam Banerjee
- Center for Single Atom-based Semiconductor Device, Department of Material Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Alireza Kashir
- Institute of Physics of the Czech Academy of Sciences, Na Slovance 2, Prague 8, 182 21, Czech Republic
| | - Stanislav Kamba
- Institute of Physics of the Czech Academy of Sciences, Na Slovance 2, Prague 8, 182 21, Czech Republic
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42
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Wang Z, Liu X, Zhou X, Yuan Y, Zhou K, Zhang D, Luo H, Sun J. Reconfigurable Quasi-Nonvolatile Memory/Subthermionic FET Functions in Ferroelectric-2D Semiconductor vdW Architectures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2200032. [PMID: 35194847 DOI: 10.1002/adma.202200032] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/03/2022] [Revised: 02/11/2022] [Indexed: 06/14/2023]
Abstract
The functional reconfiguration of transistors and memory in homogenous ferroelectric devices offers significant opportunities for implementing the concepts of in-memory computing and logic-memory monolithic integration. Thus far, reconfiguration is realized through programmable doping profiles in the semiconductor channel using multiple-gate operation. This complex device architecture limits further scaling to match the overall chip requirements. Here, reconfigurable memory/transistor functionalities in a ferroelectric-gated van der Waals transistor by controlling the behavior of ferroelectric oxygen vacancies at the interface are demonstrated. Short- and long-term memory functions are demonstrated by modulating the border oxygen vacancy distribution and the associated charge dynamics. The quasi-nonvolatile long-term memory exhibits data retention of over 105 s and endurance of up to 5 × 105 cycles, verifying its applicability as a potential device platform for neuromorphic networks. More importantly, by modulating the ferroelectricity of the interfacial domains with the interactions of oxygen vacancies, a hysteresis-free logic transistor is realized with a subthermionic subthreshold swing down to 46 mV dec-1 , which resembles a negative-capacitance field-effect transistor. The new concept of achieving functional reconfiguration with prior device performance in a single-gate ferroelectric field-effect transistor is of great advantage in future integrated circuit applications.
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Affiliation(s)
- Zhongwang Wang
- School of Physics and Electronics, Central South University, Changsha, 410083, China
| | - Xiaochi Liu
- School of Physics and Electronics, Central South University, Changsha, 410083, China
| | - Xuefan Zhou
- State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083, China
| | - Yahua Yuan
- School of Physics and Electronics, Central South University, Changsha, 410083, China
| | - Kechao Zhou
- State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083, China
| | - Dou Zhang
- State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083, China
| | - Hang Luo
- State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083, China
| | - Jian Sun
- School of Physics and Electronics, Central South University, Changsha, 410083, China
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43
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Lee I, Park H, Nguyen QT, Kim G, Cho S, Cho I. Optimization of Feedback FET with Asymmetric Source Drain Doping Profile. MICROMACHINES 2022; 13:mi13040508. [PMID: 35457814 PMCID: PMC9030162 DOI: 10.3390/mi13040508] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/15/2022] [Revised: 03/21/2022] [Accepted: 03/22/2022] [Indexed: 01/25/2023]
Abstract
A feedback field-effect transistor (FBFET) is a novel device that uses a positive feedback mechanism. FBFET has a high on-/off ratio and is expected to realize ideal switching characteristics through steep changes from off-state to on-state. In this paper, we propose and optimize FBFET devices with asymmetric source/drain doping concentrations. Additionally, we discuss the changes in electrical characteristics across various channel length and channel thickness conditions and compare them with those of FBFET with a symmetric source/drain. This shows that FBFET with an asymmetric source/drain has a higher on-/off ratio than FBFET with a symmetric source/drain.
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Affiliation(s)
- Inyoung Lee
- Department of Electronic Engineering, Myongji University, Yongin-si 17058, Gyeonggi-do, Korea; (I.L.); (H.P.); (Q.T.N.); (G.K.)
| | - Hyojin Park
- Department of Electronic Engineering, Myongji University, Yongin-si 17058, Gyeonggi-do, Korea; (I.L.); (H.P.); (Q.T.N.); (G.K.)
| | - Quan The Nguyen
- Department of Electronic Engineering, Myongji University, Yongin-si 17058, Gyeonggi-do, Korea; (I.L.); (H.P.); (Q.T.N.); (G.K.)
| | - Garam Kim
- Department of Electronic Engineering, Myongji University, Yongin-si 17058, Gyeonggi-do, Korea; (I.L.); (H.P.); (Q.T.N.); (G.K.)
| | - Seongjae Cho
- Department of Electronic Engineering, Gachon University, Seongnam-si 13120, Gyeonggi-do, Korea
- Correspondence: (S.C.); (I.C.)
| | - Ilhwan Cho
- Department of Electronic Engineering, Myongji University, Yongin-si 17058, Gyeonggi-do, Korea; (I.L.); (H.P.); (Q.T.N.); (G.K.)
- Correspondence: (S.C.); (I.C.)
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44
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Temperature- and Frequency-Dependent Ferroelectric Characteristics of Metal-Ferroelectric-Metal Capacitors with Atomic-Layer-Deposited Undoped HfO2 Films. MATERIALS 2022; 15:ma15062097. [PMID: 35329549 PMCID: PMC8953931 DOI: 10.3390/ma15062097] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/10/2022] [Revised: 03/03/2022] [Accepted: 03/08/2022] [Indexed: 02/05/2023]
Abstract
In this study, we evaluated the temperature- and frequency-dependent ferroelectric characteristics of TiN/undoped HfO2/TiN metal-ferroelectric-metal (MFM) capacitors in which an undoped HfO2 film was deposited through atomic layer deposition (ALD). Successful ferroelectric characteristics were achieved after postdeposition annealing at 650 °C, which exhibited a remanent polarization of 8 μC/cm2 and a coercive electric field of 1.6 MV/cm at 25 °C (room temperature). The ferroelectric property was maintained at 200 °C and decreased as the temperature increased. The ferroelectric property was completely lost above 320 °C and fully recovered after cooling. The frequency dependency was evaluated by bias-dependent capacitance–voltage and s-parameter measurements, which indicated that the ferroelectric property was maintained up to several hundred MHz. This study reveals the ultimate limitations of the application of an undoped HfO2 MFM capacitor.
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45
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Singh S, Singh S, Mohammed MKA, Kishor Jha K, Loan SA. Reliability and sensitivity analysis of double inverted-T nano-cavity label-free Si:HfO 2 ferroelectric junctionless TFET biosensors. RSC Adv 2022; 12:27179-27188. [PMID: 36276049 PMCID: PMC9511230 DOI: 10.1039/d2ra03118c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/17/2022] [Accepted: 08/29/2022] [Indexed: 12/05/2022] Open
Abstract
In this work, we propose and simulate an ultrasensitive, label-free, and charge/dielectric modulated Si:HfO2 ferroelectric junctionless tunnel field effect transistor (FE-JL-TFET) based biosensor. The proposed sensing device employs a dual inverted-T cavity and uses ferroelectric gate stacking of Si-doped HfO2, a key enabler of negative capacitance (NC) behavior. The two cavities are carved in gate-source underlap regions by a sacrificial etching technique to sense biomolecules such as streptavidin (2.1), bacteriophage T7 (6.3) and gelatin (12). Two dimensional (2D) calibrated simulations have been performed and the impact of various device parameters, including cavity length and height, on various performance measuring parameters has been studied. It has been observed that the biosensor exhibits better sensitivities for both neutral and charged biomolecules. The maximum values of the ION/IOFF sensitivity for the neutral, positively charged and negatively charged biomolecules are as high as 3.77 × 109, 5.85 × 109, and 1.72 × 1010, respectively. It has been observed that optimizing the cavity length and height can significantly improve the sensing capability of the proposed device. The comparative analysis of the proposed biosensor and other state of the art biosensors shows a significant improvement in the sensitivity (101 to 106 times) in the proposed biosensor. The detrimental effect of interface trapped charges on the biosensor performance is also analyzed in detail. We propose and simulate an ultrasensitive, label-free, and charge/dielectric modulated Si:HfO2 ferroelectric junctionless tunnel field effect transistor (FE-JL-TFET) based biosensor.![]()
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Affiliation(s)
- Sangeeta Singh
- Microelectronics & VLSI Lab, National Institute of Technology, Patna-800005, India
| | - Shradhya Singh
- Microelectronics & VLSI Lab, National Institute of Technology, Patna-800005, India
| | - Mustafa K. A. Mohammed
- Department of Medical Physics, Al-Mustaqbal University College, 51001 Hillah, Babylon, Iraq
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46
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Chauhan N, Bagga N, Banchhor S, Datta A, Dasgupta S, Bulusu A. Negative-to-Positive Differential Resistance Transition in Ferroelectric FET: Physical Insight and Utilization in Analog Circuits. IEEE TRANSACTIONS ON ULTRASONICS, FERROELECTRICS, AND FREQUENCY CONTROL 2022; 69:430-437. [PMID: 34587006 DOI: 10.1109/tuffc.2021.3116897] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
In this article, for the first time, we explained a detailed physical insight for negative differential resistance (NDR) to positive differential resistance (PDR) transition in a ferroelectric (FE)-based negative capacitance (NC) FET and also its dependence on the device terminal voltages. Using extensive well-calibrated TCAD simulations, we have investigated this phenomenon on fully depleted silicon on insulator (FDSOI)-NCFET. The NDR-to-PDR transition occurs due to FE layer capacitance changes from a negative to positive state during channel pinchoff. This, in turn, results in a valley point in the output characteristic ( IDS - VDS ) at which the output resistance is infinite. We also found that we could alter the valley point location by modulating the vertical electric field through the FE layer in the channel pinchoff region using body bias ( VBB ). The interface oxide charges also impacted the NDR to PDR transition, and a positive interface charge results in faster NDR to PDR transition. Furthermore, we have utilized the modulation in the NDR-to-PDR transition due to VBB for designing a current mirror. Results show that the output current ( IOUT ) variation due to VDS reduces from ~8% to ~2% with VBB . We have also designed a single-stage common source (CS) amplifier and provided design guidelines to achieve a higher gain in the NDR region. The results obtained using a small-signal model of the FDSOI-NCFET demonstrate that ~25% higher gain can be achieved with the discussed design guidelines in the NDR region compared to the transition region of IDS - VDS . We have also explored the device scaling effect on the amplifier gain and found that ~ 2.23× gain can be increased with smaller channel length and higher device width.
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47
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Bakaul SR, Prokhorenko S, Zhang Q, Nahas Y, Hu Y, Petford-Long A, Bellaiche L, Valanoor N. Freestanding Ferroelectric Bubble Domains. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2105432. [PMID: 34541726 DOI: 10.1002/adma.202105432] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/14/2021] [Revised: 08/17/2021] [Indexed: 06/13/2023]
Abstract
Bubble-like domains, typically a precursor to the electrical skyrmions, arise in ultrathin complex oxide ferroelectric-dielectric-ferroelectric heterostructures epitaxially clamped with flat substrates. Here, it is reported that these specially ordered electric dipoles can also be retained in a freestanding state despite the presence of inhomogeneously distributed structural ripples. By probing local piezo and capacitive responses and using atomistic simulations, this study analyzes these ripples, sheds light on how the bubbles are stabilized in the modified electromechanical energy landscape, and discusses the difference in morphology between bubbles in freestanding and as-grown states. These results are anticipated to be the starting point of a new paradigm for the exploration of electric skyrmions with arbitrary boundaries and physically flexible topological orders in ferroelectric curvilinear space.
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Affiliation(s)
- Saidur R Bakaul
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Sergei Prokhorenko
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, 72701, USA
| | - Qi Zhang
- School of Materials Science and Engineering, The University of New South Wales, Sydney, New South Wales, 2052, Australia
| | - Yousra Nahas
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, 72701, USA
| | - Yushi Hu
- Department of Computer Science, University of Chicago, 5730 S Ellis Ave, Chicago, IL, 60637, USA
| | - Amanda Petford-Long
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Laurent Bellaiche
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, 72701, USA
| | - Nagarajan Valanoor
- School of Materials Science and Engineering, The University of New South Wales, Sydney, New South Wales, 2052, Australia
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48
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Liu M, Liao T, Sun Z, Gu Y, Kou L. 2D ferroelectric devices: working principles and research progress. Phys Chem Chem Phys 2021; 23:21376-21384. [PMID: 34614052 DOI: 10.1039/d1cp02788c] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/20/2023]
Abstract
Two-dimensional (2D) ferroelectric materials are promising for use in high-performance nanoelectronic devices due to the non-volatility, high storage density, low energy cost and short response time originating from their bistable and switchable polarization states. In this mini review, we first discuss the mechanism and operation principles of ferroelectric devices to facilitate understanding of these novel nanoelectronics and then summarize the latest research progress of electronic devices based on 2D ferroelectrics. Finally, the perspectives for future research and development directions in various fields are provided. We expect this will provide an overview regarding the application of 2D ferroelectrics in electronic appliances.
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Affiliation(s)
- Minghao Liu
- School of Mechanical, Medical and Process Engineering, Queensland University of Technology, Brisbane, QLD 4001, Australia.
| | - Ting Liao
- School of Mechanical, Medical and Process Engineering, Queensland University of Technology, Brisbane, QLD 4001, Australia.
| | - Ziqi Sun
- School of Chemistry and Physics, Queensland University of Technology, Brisbane, QLD 4001, Australia
| | - Yuantong Gu
- School of Mechanical, Medical and Process Engineering, Queensland University of Technology, Brisbane, QLD 4001, Australia.
| | - Liangzhi Kou
- School of Mechanical, Medical and Process Engineering, Queensland University of Technology, Brisbane, QLD 4001, Australia.
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49
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Das D, Khan AI. Ferroelectricity in CMOS-Compatible Hafnium Oxides: Reviving the ferroelectric field-effect transistor technology. IEEE NANOTECHNOLOGY MAGAZINE 2021. [DOI: 10.1109/mnano.2021.3098218] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2022]
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50
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Pintilie L, Boni GA, Chirila CF, Stancu V, Trupina L, Istrate CM, Radu C, Pintilie I. Homogeneous versus Inhomogeneous Polarization Switching in PZT Thin Films: Impact of the Structural Quality and Correlation to the Negative Capacitance Effect. NANOMATERIALS 2021; 11:nano11082124. [PMID: 34443956 PMCID: PMC8402043 DOI: 10.3390/nano11082124] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/29/2021] [Revised: 08/16/2021] [Accepted: 08/19/2021] [Indexed: 11/25/2022]
Abstract
Polarization switching in ferroelectric films is exploited in many applications, such as non-volatile memories and negative capacitance field affect transistors. This can be inhomogeneous or homogeneous, depending on if ferroelectric domains are forming or not during the switching process. The relation between the polarization switching, the structural quality of the films and the negative capacitance was not studied in depth. Here, Pb(Zr0.2Ti0.8)O3 (PZT) layers were deposited by pulse laser deposition (PLD) and sol-gel (SG) on single crystal SrTiO3 (STO) and Si substrates, respectively. The structural quality was analyzed by X-ray diffraction and transmission electron microscopy, while the electric properties were investigated by performing hysteresis, dynamic dielectric measurements, and piezo-electric force microscopy analysis. It was found that the PZT layers grown by PLD on SRO/STO substrates are epitaxial while the layers deposited by SG on Pt/Si are polycrystalline. The polarization value decreases as the structure changes from epitaxial to polycrystalline, as well as the magnitude of the leakage current and of the differential negative capacitance, while the switching changes from homogeneous to inhomogeneous. The results are explained by the compensation rate of the depolarization field during the switching process, which is much faster in epitaxial films than in polycrystalline ones.
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