Inducing and probing non-thermal transitions in semiconductors using femtosecond laser pulses

Ultrafast Laser Processing for High-Aspect-Ratio Structures

Over the past few decades, remarkable breakthroughs and progress have been achieved in ultrafast laser processing technology. Notably, the remarkable high-aspect-ratio processing capabilities of ultrafast lasers have garnered significant attention to meet the stringent performance and structural requirements of materials in specific applications. Consequently, high-aspect-ratio microstructure processing relying on nonlinear effects constitutes an indispensable aspect of this field. In the paper, we review the new features and physical mechanisms underlying ultrafast laser processing technology. It delves into the principles and research achievements of ultrafast laser-based high-aspect-ratio microstructure processing, with a particular emphasis on two pivotal technologies: filamentation processing and Bessel-like beam processing. Furthermore, the current challenges and future prospects for achieving both high precision and high aspect ratios simultaneously are discussed, aiming to provide insights and directions for the further advancement of high-aspect-ratio processing.

Cooperative dynamic polaronic picture of diamond color centers

Polarons can control carrier mobility and can also be used in the design of quantum devices. Although much effort has been directed into investigating the nature of polarons, observation of defect-related polarons is challenging due to electron-defect scattering. Here we explore the polaronic behavior of nitrogen-vacancy (NV) centers in a diamond crystal using an ultrafast pump-probe technique. A 10-fs optical pulse acts as a source of high electric field exceeding the dielectric breakdown threshold, in turn exerting a force on the NV charge distribution and polar optical phonons. The electronic and phononic responses are enhanced by an order of magnitude for a low density of NV centers, which we attribute to a combination of cooperative polaronic effects and scattering by defects. First-principles calculations support the presence of dipolar Fröhlich interaction via non-zero Born effective charges. Our findings provide insights into the physics of color centers in diamonds.

Controllable Preparation of Fused Silica Micro Lens Array through Femtosecond Laser Penetration-Induced Modification Assisted Wet Etching

As an integrable micro-optical device, micro lens arrays (MLAs) have significant applications in modern optical imaging, new energy technology, and advanced displays. In order to reduce the impact of laser modification on wet etching, we propose a technique of femtosecond laser penetration-induced modification-assisted wet etching (FLIPM-WE), which avoids the influence of previous modification layers on subsequent laser pulses and effectively improves the controllability of lens array preparation. We conducted a detailed study on the effects of the laser single pulse energy, pulse number, and hydrofluoric acid etching duration on the morphology of micro lenses and obtained the optimal process parameters. Ultimately, two types of fused silica micro lens arrays with different focal lengths but the same numerical aperture (NA = 0.458) were fabricated using the FLPIM-WE technology. Both arrays exhibited excellent geometric consistency and surface quality (Ra~30 nm). Moreover, they achieved clear imaging at various magnifications with an adjustment range of 1.3×~3.0×. This provides potential technical support for special micro-optical systems.

Pulsed Laser-Bleaching Semiconductor and Photodetector

Pulsed lasers alter the optical properties of semiconductors and affect the photoelectric function of the photodetectors significantly, resulting in transient changes known as bleaching. Bleaching has a profound impact on the control and interference of photodetector applications. Experiments using pump-probe techniques have made significant contributions to understanding ultrafast carrier dynamics. However, there are few theoretical studies to the best of our knowledge. Here, carrier dynamic models for semiconductors and photodetectors are established, respectively, employing the rectified carrier drift-diffusion model. The pulsed laser bleaching effect on seven types of semiconductors and photodetectors from visible to long-wave infrared is demonstrated. Additionally, a continuous bleaching method is provided, and the finite-difference time-domain (FDTD) method is used to solve carrier dynamic theory models. Laser parameters for continuous bleaching of semiconductors and photodetectors are calculated. The proposed bleaching model and achieved laser parameters for continuous bleaching are essential for several applications using semiconductor devices, such as infrared detection, biological imaging, and sensing.

Melting entropy of crystals determined by electron-beam-induced configurational disordering

Upon melting, the molecules in a crystal explore numerous configurations, reflecting an increase in disorder. The molar entropy of disorder can be defined by Boltzmann's formula ΔSd = Rln(Wd), where Wd is the increase in the number of microscopic states, so far inaccessible experimentally. We found that the Arrhenius frequency factor A of the electron diffraction signal decay provides Wd through an experimental equation A = AINTWd, where AINT is an inelastic scattering cross section. The method connects Clausius and Boltzmann experimentally and supplements the Clausius approach, being applicable to a femtogram quantity of thermally unstable and biomolecular crystals. The data also showed that crystal disordering and crystallization of melt are reciprocal, both governed by the entropy change but manifesting in opposite directions.

Study of rutile TiO2(110) single crystal by transient absorption spectroscopy in the presence of Ce4+cations in aqueous environment. Implication on water splitting

Ce4+cations are commonly used as electron acceptors during the water oxidation to O2reaction over Ir- and Ru-based catalysts. They can also be reduced to Ce3+cations by excited electrons from the conduction band of an oxide semiconductor with a suitable energy level. In this work, we have studied their interaction with a rutile TiO2(110) single crystal upon band gap excitation by femtosecond transient absorption spectroscopy (TAS) in solution in the 350-900 nm range and up to 3.5 ns. Unlike excitation in the presence of water alone the addition of Ce4+resulted in a clear ground-state bleaching (GSB) signal at the band gap energy of TiO2(ca. 400 nm) with a time constantt= 4-5 ps. This indicated that the Ce4+cations presence has quenched the e-h recombination rate when compared to water alone. In addition to GSB, two positive signals are observed and are attributed to trapped holes (in the visible region, 450-550 nm) and trapped electrons in the IR region (>700 nm). Contrary to expectation, the lifetime of the positive signal between 450 and 550 nm decreased with increasing concentrations of Ce4+. We attribute the decrease in the lifetime of this signal to electrostatic repulsion between Ce4+at the surface of TiO2(110) and positively charged trapped holes. It was also found that at the very short time scale (<2-3 ps) the fast decaying TAS signal of excited electrons in the conduction band is suppressed because of the presence of Ce4+cations. Results point out that the presence of Ce4+cations increases the residence time (mobility) of excited electrons and holes at the conduction band and valence band energy levels (instead of being trapped). This might provide further explanations for the enhanced reaction rate of water oxidation to O2in the presence of Ce4+cations.

Optical probing of ultrafast laser-induced solid-to-overdense-plasma transitions

Understanding the solid target dynamics resulting from the interaction with an ultrashort laser pulse is a challenging fundamental multi-physics problem involving atomic and solid-state physics, plasma physics, and laser physics. Knowledge of the initial interplay of the underlying processes is essential to many applications ranging from low-power laser regimes like laser-induced ablation to high-power laser regimes like laser-driven ion acceleration. Accessing the properties of the so-called pre-plasma formed as the laser pulse's rising edge ionizes the target is complicated from the theoretical and experimental point of view, and many aspects of this laser-induced transition from solid to overdense plasma over picosecond timescales are still open questions. On the one hand, laser-driven ion acceleration requires precise control of the pre-plasma because the efficiency of the acceleration process crucially depends on the target properties at the arrival of the relativistic intensity peak of the pulse. On the other hand, efficient laser ablation requires, for example, preventing the so-called "plasma shielding". By capturing the dynamics of the initial stage of the interaction, we report on a detailed visualization of the pre-plasma formation and evolution. Nanometer-thin diamond-like carbon foils are shown to transition from solid to plasma during the laser rising edge with intensities < 1016 W/cm². Single-shot near-infrared probe transmission measurements evidence sub-picosecond dynamics of an expanding plasma with densities above 1023 cm-3 (about 100 times the critical plasma density). The complementarity of a solid-state interaction model and kinetic plasma description provides deep insight into the interplay of initial ionization, collisions, and expansion.

Exploration of fs-laser ablation parameter space for 2D/3D imaging of soft and hard materials by tri-beam microscopy

Tri-beam microscopes comprising a fs-laser beam, a Xe+ plasma focused ion beam (PFIB) and an electron beam all in one chamber open up exciting opportunities for site-specific correlative microscopy. They offer the possibility of rapid ablation and material removal by fs-laser, subsequent polishing by Xe-PFIB milling and electron imaging of the same area. While tri-beam systems are capable of probing large (mm) volumes providing high resolution microscopical characterisation of 2D and 3D images across exceptionally wide range of materials and biomaterials applications, presenting high quality/low damage surfaces to the electron beam can present a significant challenge, especially given the large parameter space for optimisation. Here the optimal conditions and artefacts associated with large scale volume milling, mini test piece manufacture, serial sectioning and surface polishing are investigated, both in terms of surface roughness and surface quality for metallic, ceramic, mixed complex phase, carbonaceous, and biological materials. This provides a good starting place for those wishing to examine large areas or volumes by tri-beam microscopy across a range of materials.

Ultrafast switching to zero field topological spin textures in ferrimagnetic TbFeCo films

The capability of femtosecond (fs) laser pulses to manipulate topological spin textures on a very short time scale is sparking considerable interest. This article presents the creation of high density zero field topological spin textures by fs laser excitation in ferrimagnetic TbFeCo amorphous films. The topological spin textures are demonstrated to emerge under fs laser pulse excitation through a unique ultrafast nucleation mechanism, rather than thermal effects. Notably, large intrinsic uniaxial anisotropy could substitute the external magnetic field for the creation and stabilization of topological spin textures, which is further verified by the corresponding micromagnetic simulation. The ultrafast switching between topological trivial and nontrivial magnetic states is realized at an optimum magnitude of magnetic field and laser fluence. Our results would broaden the options to generate zero-field topological spin textures from versatile magnetic states and provides a new perspective for ultrafast switching of 0/1 magnetic states in spintronic devices.

Spatiotemporal Visualization of Photogenerated Carriers on an Avalanche Photodiode Surface Using Ultrafast Scanning Electron Microscopy

The spatiotemporal evolution of photogenerated charge carriers on surfaces and at interfaces of photoactive materials is an important issue for understanding fundamental physical processes in optoelectronic devices and advanced materials. Conventional optical probe-based microscopes that provide indirect information about the dynamic behavior of photogenerated carriers are inherently limited by their poor spatial resolution and large penetration depth. Herein, we develop an ultrafast scanning electron microscope (USEM) with a planar emitter. The photoelectrons per pulse in this USEM can be two orders of magnitude higher than that of a tip emitter, allowing the capture of high-resolution spatiotemporal images. We used the contrast change of the USEM to examine the dynamic nature of surface carriers in an InGaAs/InP avalanche photodiode (APD) after femtosecond laser excitation. It was observed that the photogenerated carriers showed notable longitudinal drift, lateral diffusion, and carrier recombination associated with the presence of photovoltaic potential at the surface. This work demonstrates an in situ multiphysics USEM platform with the capability to stroboscopically record carrier dynamics in space and time.

Femtosecond Laser Direct Writing of Flexible Electronic Devices: A Mini Review

By virtue of its narrow pulse width and high peak power, the femtosecond pulsed laser can achieve high-precision material modification, material additive or subtractive, and other forms of processing. With additional good material adaptability and process compatibility, femtosecond laser-induced application has achieved significant progress in flexible electronics in recent years. These advancements in the femtosecond laser fabrication of flexible electronic devices are comprehensively summarized here. This review first briefly introduces the physical mechanism and characteristics of the femtosecond laser fabrication of various electronic microdevices. It then focuses on effective methods of improving processing efficiency, resolution, and size. It further highlights the typical progress of applications, including flexible energy storage devices, nanogenerators, flexible sensors, and detectors, etc. Finally, it discusses the development tendency of ultrashort pulse laser processing. This review should facilitate the precision manufacturing of flexible electronics using a femtosecond laser.

Separated Electron-Phonon and Phonon-Phonon Scatterings Across Interface in Thin Film LaCoO3 /SrTiO3

Electron-phonon coupling (EPC) and phonon-phonon scattering (PPS) are at the core of the microscopic physics mechanisms of vast quantum materials. However, to date, there are rarely reports that these two processes can be spatially separated, although they are usually temporally detached with different characteristic lifetimes. Here, by employing ultrafast spectroscopy to investigate the photo-carrier ultrafast dynamics in a LaCoO3 thin film on a (100) SrTiO3 substrate, intriguing evidence is found that the two interactions are indeed spatially separated. The EPC mainly occurs in the thin film, whereas PPS is largely in the substrate, especially at the several atomic layers near the interface. Across-interface penetration and decay of optical phonons into acoustic phonons thus naturally occur. An EPC strength λEg  = 0.30 is also obtained and an acoustic phonon mode at 45.3 GHz is observed. The finding lays out a cornerstone for future quantum nano device designs.

High-Transmission Biomimetics Structural Surfaces Produced via Ultrafast Laser Manufacturing

Inspired by periodically aligned micro/nanostructures on biological surfaces, researchers have been fabricating biomimetic structures with superior performance. As a promising and versatile tool, an ultrafast laser combined with other forms of processing technology has been utilized to manufacture functional structures, e.g., the biomimetic subwavelength structures to restrain the surface Fresnel reflectance. In this review paper, we interpret the biomimetic mechanism of antireflective subwavelength structures (ARSSs) for high-transmission windows. Recent advances in the fabrication of ARSSs with an ultrafast laser are summarized and introduced. The limitations and challenges of laser processing technology are discussed, and the future prospects for advancement are outlined, too.

Roadmap on Label-Free Super-Resolution Imaging

Label-free super-resolution (LFSR) imaging relies on light-scattering processes in nanoscale objects without a need for fluorescent (FL) staining required in super-resolved FL microscopy. The objectives of this Roadmap are to present a comprehensive vision of the developments, the state-of-the-art in this field, and to discuss the resolution boundaries and hurdles which need to be overcome to break the classical diffraction limit of the LFSR imaging. The scope of this Roadmap spans from the advanced interference detection techniques, where the diffraction-limited lateral resolution is combined with unsurpassed axial and temporal resolution, to techniques with true lateral super-resolution capability which are based on understanding resolution as an information science problem, on using novel structured illumination, near-field scanning, and nonlinear optics approaches, and on designing superlenses based on nanoplasmonics, metamaterials, transformation optics, and microsphere-assisted approaches. To this end, this Roadmap brings under the same umbrella researchers from the physics and biomedical optics communities in which such studies have often been developing separately. The ultimate intent of this paper is to create a vision for the current and future developments of LFSR imaging based on its physical mechanisms and to create a great opening for the series of articles in this field.

Photoexcitation-induced passivation of SnO2 thin film for efficient perovskite solar cells

A high-quality tin oxide electron transport layer (ETL) is a key common factor to achieve high-performance perovskite solar cells (PSCs). However, the conventional annealing technique to prepare high-quality ETLs by continuous heating under near-equilibrium conditions requires high temperatures and a long fabrication time. Alternatively, we present a non-equilibrium, photoexcitation-induced passivation technique that uses multiple ultrashort laser pulses. The ultrafast photoexcitation and following electron-electron and electron-phonon scattering processes induce ultrafast annealing to efficiently passivate surface and bulk defects, and improve the crystallinity of SnO2, resulting in suppressing the carrier recombination and facilitating the charge transport between the ETL and perovskite interface. By rapidly scanning the laser beam, the annealing time is reduced to several minutes, which is much more efficient compared with conventional thermal annealing. To demonstrate the university and scalability of this technique, typical antisolvent and antisolvent-free processed hybrid organic-inorganic metal halide PSCs have been fabricated and achieved the power conversion efficiency (PCE) of 24.14% and 22.75% respectively, and a 12-square-centimeter module antisolvent-free processed perovskite solar module achieves a PCE of 20.26%, with significantly enhanced performance both in PCE and stability. This study establishes a new approach towards the commercialization of efficient low-temperature manufacturing of PSCs.

Observing femtosecond orbital dynamics in ultrafast Ge melting with time-resolved resonant X-ray scattering

Photoinduced nonequilibrium phase transitions have stimulated interest in the dynamic interactions between electrons and crystalline ions, which have long been overlooked within the Born-Oppenheimer approximation. Ultrafast melting before lattice thermalization prompted researchers to revisit this issue to understand ultrafast photoinduced weakening of the crystal bonding. However, the absence of direct evidence demonstrating the role of orbital dynamics in lattice disorder leaves it elusive. By performing time-resolved resonant X-ray scattering with an X-ray free-electron laser, we directly monitored the ultrafast dynamics of bonding orbitals of Ge to drive photoinduced melting. Increased photoexcitation of bonding electrons amplifies the orbital disturbance to expedite the lattice disorder approaching the sub-picosecond scale of the nonthermal regime. The lattice disorder time shows strong nonlinear dependence on the laser fluence with a crossover behavior from thermal-driven to nonthermal-dominant kinetics, which is also verified by ab initio and two-temperature molecular dynamics simulations. This study elucidates the impact of bonding orbitals on lattice stability with a unifying interpretation on photoinduced melting.

Simulation of ultrafast electron diffraction intensity under coherent acoustic phonons

Ultrafast electron diffraction has been proven to be a powerful tool for the study of coherent acoustic phonons owing to its high sensitivity to crystal structures. However, this sensitivity leads to complicated behavior of the diffraction intensity, which complicates the analysis process of phonons, especially higher harmonics. Here, we theoretically analyze the effects of photoinduced coherent transverse and longitudinal acoustic phonons on electron diffraction to provide a guide for the exploitation and modulation of coherent phonons. The simulation of the electron diffraction was performed in 30-nm films with different optical penetration depths based on the atomic displacements obtained by solving the wave equation. The simulation results exhibit a complex relationship between the frequencies of the phonons and diffraction signals, which highly depends on the laser penetration depth, sample thickness, and temporal stress distribution. In addition, an intensity decomposition method is proposed to account for the in-phase oscillation and high harmonics caused by inhomogeneous excitation. These results can provide new perspectives and insights for a comprehensive and accurate understanding of the lattice response under coherent phonons.

Nanoscale reshaping of resonant dielectric microstructures by light-driven explosions

Femtosecond-laser-assisted material restructuring employs extreme optical intensities to localize the ablation regions. To overcome the minimum feature size limit set by the wave nature of photons, there is a need for new approaches to tailored material processing at the nanoscale. Here, we report the formation of deeply-subwavelength features in silicon, enabled by localized laser-induced phase explosions in prefabricated silicon resonators. Using short trains of mid-infrared laser pulses, we demonstrate the controllable formation of high aspect ratio (>10:1) nanotrenches as narrow as [Formula: see text]. The trench geometry is shown to be scalable with wavelength, and controlled by multiple parameters of the laser pulse train, such as the intensity and polarization of each laser pulse and their total number. Particle-in-cell simulations reveal localized heating of silicon beyond its boiling point and suggest its subsequent phase explosion on the nanoscale commensurate with the experimental data. The observed femtosecond-laser assisted nanostructuring of engineered microstructures (FLANEM) expands the nanofabrication toolbox and opens exciting opportunities for high-throughput optical methods of nanoscale structuring of solid materials.

Light-Induced Nonthermal Phase Transition to the Topological Crystalline Insulator State in SnSe

Femtosecond pulses have been used to reveal hidden broken symmetry states and induce transitions to metastable states. However, these states are mostly transient and disappear after laser removal. Photoinduced phase transitions toward crystalline metastable states with a change of topological order are rare and difficult to predict and realize experimentally. Here, by using constrained density functional perturbation theory and accounting for light-induced quantum anharmonicity, we show that ultrafast lasers can permanently transform the topologically trivial orthorhombic structure of SnSe into the topological crystalline insulating rocksalt phase via a first-order nonthermal phase transition. We describe the reaction path and evaluate the critical fluence and possible decay channels after photoexcitation. Our simulations of the photoexcited structural and vibrational properties are in excellent agreement with recent pump-probe data in the intermediate fluence regime below the transition with an error on the curvature of the quantum free energy of the photoexcited state that is smaller than 2%.

Study of Through Glass Via (TGV) Using Bessel Beam, Ultrashort Two-Pulses of Laser and Selective Chemical Etching

Selective laser etching is a promising candidate for the mass production of glass interposers. It comprises two steps: local modification by an ultrashort-pulsed laser and chemical etching of the modified volume. According to previous studies, when an ultrashort-pulsed laser beam is irradiated on the sample, electron excitation occurs, followed by phonon vibration. In general, the electron excitation occurs for less than a few tens of picoseconds and phonon vibration occurs for more than 100 picoseconds. Thus, in order to compare the electric absorption and thermal absorption of photons in the commercial glass, we attempt to implement an additional laser pulse of 213 ps and 10 ns after the first pulse. The modified glass sample is etched with 8 mol/L KOH solution with 110 °C to verify the effect. Here, we found that the electric absorption of photons is more effective than the thermal absorption of them. We can claim that this result helps to enhance the process speed of TGV generation.

High aspect ratio diamond nanosecond laser machining

Laser processing of diamond has become an important technique for fabricating next generation microelectronic and quantum devices. However, the realization of low taper, high aspect ratio structures in diamond remains a challenge. We demonstrate the effects of pulse energy, pulse number and irradiation profile on the achievable aspect ratio with 532 nm nanosecond laser machining. Strong and gentle ablation regimes were observed using percussion hole drilling of type Ib HPHT diamond. Under percussion hole drilling a maximum aspect ratio of 22:1 was achieved with 10,000 pulses. To reach aspect ratios on average 40:1 and up to 66:1, rotary assisted drilling was employed using > 2 M pulse accumulations. We additionally demonstrate methods of obtaining 0.1° taper angles via ramped pulse energy machining in 10:1 aspect ratio tubes. Finally, effects of laser induced damage are studied using confocal Raman spectroscopy with observation of up to 36% increase in tensile strain following strong laser irradiation. However, we report that upon application of 600 °C heat treatment, induced strain is reduced by up to ~ 50% with considerable homogenization of observed strain.

Supplementary Information

The online version contains supplementary material available at 10.1007/s00339-023-06755-2.

Formation of Periodic Surface Structures by Multipulse Femtosecond Laser Processing of Au-Coated Ni in Various Fluids

Using multipulse linearly polarized femtosecond laser processing of a Au-coated Ni surface in various liquid media created subwavelength self-organized nanoripples. The thin gold film improved the laser absorptivity, decreasing the ripple generation threshold in liquids. High spatial frequency ripples exhibited lower angular deviation than low spatial frequency ones, but in water the deviation was comparable for both types of ripples. The initiation of nanoripples may precede nanoparticle generation, which is why in hexane several cuboid Au particles were trapped between the ripples. Fast cooling processes freeze ejected molten droplets during the phase explosion and surface reorganization. Grazing incidence X-ray diffraction of samples processed in butanol showed a small shift toward smaller angles for the Ni phase, indicating a lattice expansion due to higher tensile stress. Confocal micro-Raman spectroscopy detected surface graphitization and amorphization in areas laser-treated in ethanol, butanol, and hexane, with the highest carbonization observed in butanol. Presumably, femtosecond laser-induced photolysis triggers the formation of graphite nanocrystallites, and consecutive pulses cause amorphization. Static contact angle measurements showed a general tendency toward hydrophobicity with highest contact angles for rippled areas created in butanol.

Femtosecond Laser Fabrication of Curved Plasma Channels with Low Surface Roughness and High Circularity for Multistage Laser-Wakefield Accelerators

A multistage laser-wakefield accelerator with curved plasma channels was proposed to accelerate electrons to TeV energy levels. In this condition, the capillary is discharged to produce plasma channels. The channels will be used as waveguides to guide intense lasers to drive wakefields inside the channel. In this work, a curved plasma channel with low surface roughness and high circularity was fabricated by a femtosecond laser ablation method based on response surface methodology. The details of the fabrication and performance of the channel are introduced here. Experiments show that such a channel can be successfully used to guide lasers, and electrons with an energy of 0.7 GeV were achieved.

Modulating the nonlinear absorption response of SnOx thin films via phase engineering

Phase (composition) is known to play a key role in determining the electronic and optical properties of amorphous oxide semiconductors. In this work, modulating the ultrafast nonlinear optical (NLO) response of SnO₂ and SnO thin films by tuning oxygen partial pressure during film sputtering is explored. Femtosecond Z-scan results demonstrate that intermediate phases have no profound impact on the two-photon absorption (TPA) response of SnO₂ and SnO films. Interestingly, the magnitude of the effective nonlinear absorption coefficient (β_eff) of both intermediate SnO_2-x and SnO_x are enhanced after the change of Sn²⁺/Sn⁴⁺ composition ratio, as measured by picosecond Z-scan technique. Femtosecond degenerate pump-probe measurements show that intermediate phases accelerate the carrier trapping and improve the defect-related carrier absorption in SnO_x (SnO-rich) film, while intermediate phase suppress the TPA response of SnO_2-x (SnO₂-rich) films, therefore carrier-induced absorption dominates the NLO behavior of SnO_2-x film on picosecond regime. Our results indicate a simple and effective way to modulate the NLO response of transparent conductive oxide SnO₂ and SnO.

Investigation on hybrid laser ablation and its application in fused silica damage mitigation

We present and investigate a hybrid laser-based method of surface shaping for damage mitigation on fused silica surfaces. Damage sites were removed and precisely shaped into an optically-benign cone by a procedure of femtosecond laser ablation with a subsequent CO₂ laser polishing process. The morphology of the cone rim was quantitatively predicted by a numerical model. Since the heat-affected zone (HAZ) of the laser polishing process was effectively confined by the optimization of ablation parameters, the dimensions of the raised rim were reduced by an order of magnitude. The intensity of the on-axis hotspot was positively related to the dimensions of the raised rim, and thus an inapparent downstream intensification was achieved by the rim reduction. Laser-induced damage threshold (LIDT) of the cone was tested to be ∼14 J/cm² on the input surface. Therefore, the presented method is appropriate to mitigate damage and also provides a promising approach to manufacturing functional microstructures for high-power applications.

Electronic Origin of Laser-Induced Ferroelectricity in SrTiO3

Although ultrafast control of the nonthermally driven ferroelectric transition of paraelectric SrTiO₃ was achieved under laser excitation, the underlying mechanism and dynamics of the photoinduced phase transition remain ambiguous. Here, the determinant formation mechanism of ultrafast ferroelectricity in SrTiO₃ is traced by nonadiabatic dynamics simulations. That is, the selective excitation of multiple phonons, induced by photoexcited electrons through the strong correlation between electronic excitation and lattice distortion, results in the breaking of the crystal central symmetry and the onset of ferroelectricity. The accompanying population transition between 3d_z² and 3d_x²-y² orbitals excites multiple phonon branches, including the two high-energy longitudinal optical modes, so as to drive the titanium ion away from the center of the oxygen octahedron and generate a metastable ferroelectric phase. Our findings reveal a cooperative electronic and ionic driving mechanism for the laser-induced ferroelectricity that provides new schemes for the optical control of ultrafast quantum states.

Eco-friendly Approach for Creation of Resonant Silicon Nanoparticle Colloids

The commercial application of Mie-resonant nanophotonic technologies currently used in various laboratory studies, from biosensing to quantum optics, appears to be challenging. Development of colloidal-based fabrication approaches is a solution to face the issue. In our research, we studied the fabrication of resonant Si nanoparticle (NP) arrays on a surface with controlled wettability. First, we use nanosecond (ns) laser ablation in water and subsequent density gradient separation to obtain colloids of resonant spherical crystalline silicon NPs with a low polydispersity index. Then, the same industrial ns laser is applied to create a wetting gradient on the steel substrate to initiate a self-assembly of the NPs deposited by drop casting. Thus, we use a single commercial ns laser for producing both the NPs and the hydrophilic wetting gradient. We apply an easily operating size separation technique and only non-toxic media. This research contributes to the large-scale fabrication of various optical devices based on resonant high-refractive index nanostructures by ecologically friendly self-assembly techniques.

CdSe-Co3O4@TiO2 nanoflower-based photoelectrochemical platform probing visible light-driven virus detection

The design and construction of a visible light-driven photoelectrochemical (PEC) device is described based on a CdSe-Co₃O₄@TiO₂ nanoflower (NF). Moreover, an application to the ultrasensitive detection of viruses, such as hepatitis E virus (HEV), HEV-like particles (HEV-LPs), and SARS-CoV-2 spike protein in complicated lysate solution, is demonstrated. The photocurrent response output of a PEC device based on CdSe-Co₃O₄@TiO₂ is enhanced compared with the individual components, TiO₂ and CdSe-Co₃O₄. This can be attributed to the CdSe quantum dot (QD) sensitization effect and strong visible light absorption to improve overall system stability. A robust oxygen-evolving catalyst (Co₃O₄) coupled at the hole-trapping site (CdSe) extends the interfacial carrier lifetime, and the energy conversion efficiency was improved. The effective hybridization between the antibody and virus resulted in a linear relationship between the change in photocurrent density and the HEV-LP concentration ranging from 10 fg mL^-1 to 10 ng mL^-1, with a detection limit of 3.5 fg mL^-1. This CdSe-Co₃O₄@TiO₂-based PEC device achieved considerable sensitivity, good specificity, and acceptable stability and demonstrated a significant ability to develop an upgraded device with affordable and portable biosensing capabilities.

"Stealth Scripts": Ultrashort Pulse Laser Luminescent Microscale Encoding of Bulk Diamonds via Ultrafast Multi-Scale Atomistic Structural Transformations

The ultrashort-laser photoexcitation and structural modification of buried atomistic optical impurity centers in crystalline diamonds are the key enabling processes in the fabrication of ultrasensitive robust spectroscopic probes of electrical, magnetic, stress, temperature fields, and single-photon nanophotonic devices, as well as in "stealth" luminescent nano/microscale encoding in natural diamonds for their commercial tracing. Despite recent remarkable advances in ultrashort-laser predetermined generation of primitive optical centers in diamonds even on the single-center level, the underlying multi-scale basic processes, rather similar to other semiconductors and dielectrics, are almost uncovered due to the multitude of the involved multi-scale ultrafast and spatially inhomogeneous optical, electronic, thermal, and structural elementary events. We enlighten non-linear wavelength-, polarization-, intensity-, pulsewidth-, and focusing-dependent photoexcitation and energy deposition mechanisms in diamonds, coupled to the propagation of ultrashort laser pulses and ultrafast off-focus energy transport by electron-hole plasma, transient plasma- and hot-phonon-induced stress generation and the resulting variety of diverse structural atomistic modifications in the diamond lattice. Our findings pave the way for new forthcoming groundbreaking experiments and comprehensive enlightening two-temperature and/or atomistic modeling both in diamonds and other semiconductor/dielectric materials, as well as innovative technological breakthroughs in the field of single-photon source fabrication and "stealth" luminescent nano/microencoding in bulk diamonds for their commercial tracing.

Raman Study of the Diamond to Graphite Transition Induced by the Single Femtosecond Laser Pulse on the (111) Face

The use of the ultrafast pulse is the current trend in laser processing many materials, including diamonds. Recently, the orientation of the irradiated crystal face was shown to play a crucial role in the diamond to graphite transition process. Here, we develop this approach and explore the nanostructure of the sp2 phase, and the structural perfection of the graphite produced. The single pulse of the third harmonic of a Ti:sapphire laser (100 fs, 266 nm) was used to study the process of producing highly oriented graphite (HOG) layers on the (111) surface of a diamond monocrystal. The laser fluence dependence on ablated crater depth was analyzed, and three different regimes of laser-induced diamond graphitization are discussed, namely: nonablative graphitization, customary ablative graphitization, and bulk graphitization. The structure of the graphitized material was investigated by confocal Raman spectroscopy. A clear correlation was found between laser ablation regimes and sp2 phase structure. The main types of structural defects that disrupt the HOG formation both at low and high laser fluencies were determined by Raman spectroscopy. The patterns revealed give optimal laser fluence for the production of perfect graphite spots on the diamond surface.

Photoinduced Rippling of Two-Dimensional Hexagonal Nitride Monolayers

Inducing structural changes and deformation using noninvasive methods, such as ultrafast laser technology, is an attractive route to multiple optomechanical and optoelectronic applications. Here, we show how photon excitation could accumulate in-plane stress and induce long-wavelength ripples in two-dimensional (2D) materials. Numerical results based on first-principles calculations and a continuum model predict that long-range nanoscale rippling could emerge under photon excitation in hexagonal nitride single atomic sheets. The photosoftened transverse acoustic mode dominates the out-of-plane distortion of the sheet, and the resultant rippling pattern strongly depends on the boundary condition. We reveal that the wavelength and height of the ripple scale as I^-1/3 and I^1/6, respectively, where I is the incident light energy flux. Our findings based on multiscale theory and simulations elucidate the interplay between carrier excitation, phonon dispersion, and long-range mechanical deformations, which could find potential usage in flexible electronics and electromechanical devices.

Photoexcitation-Induced Nonthermal Ultrafast Loss of Long-Range Order in GeTe

Nonadiabatic quantum molecular dynamics is used to investigate the evolution of GeTe photoexcited states. Results reveal a photoexcitation-induced picosecond nonthermal path for the loss of long-range order. A valence electron excitation threshold of 4% is found to trigger local disorder by switching Ge atoms from octahedral to tetrahedral sites and promoting Ge-Ge bonding. The resulting loss of long-range order for a higher valence electron excitation fraction is achieved without fulfilling the Lindemann criterion for melting, therefore utilizing a nonthermal path. The photoexcitation-induced structural disorder is accompanied by charge transfer from Te to Ge, Ge-Te bonding-to-antibonding, and Ge-Ge antibonding-to-bonding change, triggering Ge-Te bond breaking and promoting the formation of Ge-Ge wrong bonds. These results provide an electronic-structure basis to understand the photoexcitation-induced ultrafast changes in the structure and properties of GeTe and other phase-change materials.

High-speed, scanned laser structuring of multi-layered eco/bioresorbable materials for advanced electronic systems

Physically transient forms of electronics enable unique classes of technologies, ranging from biomedical implants that disappear through processes of bioresorption after serving a clinical need to internet-of-things devices that harmlessly dissolve into the environment following a relevant period of use. Here, we develop a sustainable manufacturing pathway, based on ultrafast pulsed laser ablation, that can support high-volume, cost-effective manipulation of a diverse collection of organic and inorganic materials, each designed to degrade by hydrolysis or enzymatic activity, into patterned, multi-layered architectures with high resolution and accurate overlay registration. The technology can operate in patterning, thinning and/or cutting modes with (ultra)thin eco/bioresorbable materials of different types of semiconductors, dielectrics, and conductors on flexible substrates. Component-level demonstrations span passive and active devices, including diodes and field-effect transistors. Patterning these devices into interconnected layouts yields functional systems, as illustrated in examples that range from wireless implants as monitors of neural and cardiac activity, to thermal probes of microvascular flow, and multi-electrode arrays for biopotential sensing. These advances create important processing options for eco/bioresorbable materials and associated electronic systems, with immediate applicability across nearly all types of bioelectronic studies.

Optical and Thermal Behavior of Germanium Thin Films under Femtosecond Laser Irradiation

In this study, we theoretically investigate the response of a germanium thin film under femtosecond pulsed laser irradiation. Electron and lattice temperatures, as well as material-specific optical properties such as dielectric function and reflectivity, were calculated during the irradiation using an extended two-temperature model coupled with the carrier density rate equation and the Drude model. Melting and ablation fluence thresholds were also predicted, resulting in 0.14 J cm^-2 and 0.35 J cm^-2, respectively. An ultrafast change in both optical and thermal properties was detected upon laser irradiation. Results also indicate that thermal melting occurs after germanium takes on a metallic character during irradiation, and that the impact ionization process may have a critical role in the laser-induced thermal effect. Therefore, we suggest that the origin of the thermal modification of germanium surface under femtosecond laser irradiation is mostly due the impact ionization process and that its effect becomes more important when increasing the laser fluence.

High-Precision and Low-Damage Microchannel Construction via Magnetically Assisted Laser-Induced Plasma Ablation for Micro-Thermoelectric Devices

Thermoelectric devices are developing toward high density and miniaturization with a large filling factor for new applications in chip thermal management and microenergy harvesting. Pulsed laser etching has become one of the most effective tools for the patterning construction of highly integrated micro-thermoelectric devices. However, the laser spot size and Gaussian laser energy distribution restrict the processing size and accuracy of microchannels. Moreover, the rapid temperature rise caused by laser energy injection would also raise serious problems such as element volatilization, cracks, and recast layers. Herein, a liquid-assisted nanosecond laser ablation technology with magnetically controlled plasma is proposed to etch microchannels on thermoelectric thick films. By evaluating the size and shape of microchannels, we theoretically investigated the influence of cavitation bubbles on the laser optical path and surface roughness in laser-induced plasma ablation. In addition, the energy criterion for high-precision ablation is revealed, and the effect of magnetic field on ablation threshold is explained by magnetic constraint on energy and kinetic properties of the laser-induced charged plasma plume. Finally, the high-precision and low-damage microchannels are achieved on Bi₂Te₃ thermoelectric thick films with a minimum line width of 19.12 μm and a small sidewall inclination degree of tan θ = 0.085. This work provides a promising alternative for the fabrication of high-density three-dimensional (3D) patterning in semiconductor microdevices.

Enhancing Gas Solubility in Water via Femtosecond Laser-Induced Plasma

The generation of laser-induced plasma at the gas-liquid interface provides many fundamental and interesting scientific phenomena such as ionization, sharp explosion, shock wave radiation, bubble creation, and water splitting. However, despite the extensive research in this area, there is no reference on the effect of the surrounding environment on the chemical processes that occur during the laser-induced plasma-water interaction. In this work, we investigate the effect of the surrounding gas environment on femtosecond laser-induced plasma when generated at the pure water-gas interface. Ultrashort laser pulses were applied to water in the presence of air and N₂ and Ar gas environments. Formation of a significant number of nitrate-based species in water was observed after exposure to femtosecond laser-induced plasma in air and N₂ environments. The detected NO₃ ions formed in the laser-treated water led to the appearance of an absorption peak in the UV range, a significant decrease in the water pH value, and a significant increase in water's electrical conductivity. All induced properties of water were stable for 3 months of monitoring after laser treatment. Our work shows that the generation of laser-induced plasma in water propagating into a gaseous medium facilitates the interaction between the two media, as a result of which the compositions of substances present in the gaseous medium can be dissolved in water without increasing the gas pressure. The presented approach may find applications in areas such as water purification, material synthesis, and environmental stewardship.

Femtosecond-laser-enabled simultaneous figuring and finishing of glass with a subnanometer optical surface

We demonstrate simultaneous figuring and surface finishing of glass using a femtosecond laser. For the first time, to the best of our knowledge, we have achieved deterministic material removal with nanometer precision and maintained sub-nanometer surface roughness without inducing any mid-spatial-frequency errors to the initial surface. A dynamic pulse propagation model is established to predict the interaction process, including plasma generation and surface temperature. The interactive modeling and the experiments enable the selection of a set of laser parameters to achieve controllable optical figuring and finishing. This demonstration shows the potential for using femtosecond lasers for advanced freeform optic forming, finishing, and reduction of detrimental mid-spatial-frequency errors, and laser-ablation-based patterning used for fabrication of integrated photonics and lasers.

The seeds and homogeneous nucleation of photoinduced nonthermal melting in semiconductors due to self-amplified local dynamic instability

Laser-induced nonthermal melting in semiconductors has been studied over the past four decades, but the underlying mechanism is still under debate. Here, by using an advanced real-time time-dependent density functional theory simulation, we reveal that the photoexcitation-induced ultrafast nonthermal melting in silicon occurs via homogeneous nucleation with random seeds originating from a self-amplified local dynamic instability. Because of this local dynamic instability, any initial small random thermal displacements of atoms can be amplified by a charge transfer of photoexcited carriers, which, in turn, creates a local self-trapping center for the excited carriers and yields the random nucleation seeds. Because a sufficient amount of photoexcited hot carriers must be cooled down to band edges before participating in the self-amplification of local lattice distortions, the time needed for hot carrier cooling is the response for the longer melting time scales at shorter laser wavelengths. This finding provides fresh insights into photoinduced ultrafast nonthermal melting.

A highly automated apparatus for ultra-fast laser ablation studies

We present a novel experimental apparatus that can be used for extensive systematic studies of (single- and multi-shot) ultra-short laser pulse ablation. It is fully automated and generates a large number of ablation sites in a short time on a small sample surface area. For each site, the apparatus takes four in situ images: an image of the incident ablation beam (to determine pulse energy), a white light reference image of the pristine sample site, an image of the reflected ablation spot, and a white light image of the ablated sample site. The setup can perform ablation experiments as a function of many parameters, including pulse energy, pulse duration, number of pulses, time between pulses, and focus size. As a proof of concept, we present example results on single-shot ablation off crystalline silicon. Using only data acquired in situ in the presented setup, we determine the single-shot ablation threshold as a function of pulse duration and verify the threshold value using optical interferometric profilometry. The values we found agree well with literature values.

Electromagnetically induced modification of gold optical properties

The reflection of light from a metal film, i.e., a mirror, is among the most fundamental and well-understood effects in optics. If the film thickness is greater than the wavelength, reflection is strong and is explained in simple terms by the Fresnel equations. For film thickness much less than the wavelength, reflection is far weaker and more exotic effects become possible. This is especially so if the light illuminating the film is pulsed at the femtosecond time scale. In this work, a phenomenon is proposed where few-femtosecond laser pulses temporarily modify a thin metal film's optical properties via processes that appear linear and classical in nature. By casting a pulsed standing-wave pattern across the metal surface, we consider the possibility that conduction electrons are redistributed to create temporary regions of partly enhanced or reduced density without the excitation of inter-band transitions. The process would constitute a temporary change to the conductivity of the metal, and thus, may be observable as changes to the metal's transmittance and reflectance. In regions where the density is enhanced (reduced), the transmittance is decreased (increased). The concept is termed Electromagnetically Induced Modification (EIM) and is premised on the fact that the pulse length is shorter than the relaxation time of the conduction electrons. An experiment is conducted to test the concept by measuring the change in reflectance and transmittance of gold films with thickness ranging from 20-300 Angstrom. The results show that the film's transmittance decreases only when the standing-wave pattern is present. As the pulse length is increased, or as the film thickness is increased, the changes disappear. The changes show little dependence on the pulse intensity as it is varied by a factor of two. To gain further insight, the Drude theory is used to develop a simplified model for EIM, which qualitatively agrees with the observations. However, neither the experiment nor the model can prove the validity of the EIM concept. As such, an assessment is made for the potential of alternative well-known processes to explain the observations.

Influence of Electronic Non-Equilibrium on Energy Distribution and Dissipation in Aluminum Studied with an Extended Two-Temperature Model

When an ultrashort laser pulse excites a metal surface, only a few of all the free electrons absorb a photon. The resulting non-equilibrium electron energy distribution thermalizes quickly to a hot Fermi distribution. The further energy dissipation is usually described in the framework of a two-temperature model, considering the phonons of the crystal lattice as a second subsystem. Here, we present an extension of the two-temperature model including the non-equilibrium electrons as a third subsystem. The model was proposed initially by E. Carpene and later improved by G.D. Tsibidis. We introduce further refinements, in particular, a temperature-dependent electron-electron thermalization time and an extended energy interval for the excitation function. We show results comparing the transient energy densities as well as the energy-transfer rates of the original equilibrium two-temperature description and the improved extended two-temperature model, respectively. Looking at the energy distribution of all electrons, we find good agreement in the non-equilibrium distribution of the extended two-temperature model with results from a kinetic description solving full Boltzmann collision integrals. The model provides a convenient tool to trace non-equilibrium electrons at small computational effort. As an example, we determine the dynamics of high-energy electrons observable in photo-electron spectroscopy. The comparison of the calculated spectral densities with experimental results demonstrates the necessity of considering electronic non-equilibrium distributions and electron-electron thermalization processes in time- and energy-resolved analyses.

Single-shot femtosecond bulk micromachining of silicon with mid-IR tightly focused beams

Being the second most abundant element on earth after oxygen, silicon remains the working horse for key technologies for the years. Novel photonics platform for high-speed data transfer and optical memory demands higher flexibility of the silicon modification, including on-chip and in-bulk inscription regimes. These are deepness, three-dimensionality, controllability of sizes and morphology of created modifications. Mid-IR (beyond 4 µm) ultrafast lasers provide the required control for all these parameters not only on the surface (as in the case of the lithographic techniques), but also inside the bulk of the semiconductor, paving the way to an unprecedented variety of properties that can be encoded via such an excitation. We estimated the deposited energy density as 6 kJ cm-3 inside silicon under tight focusing of mid-IR femtosecond laser radiation, which exceeds the threshold value determined by the specific heat of fusion (~ 4 kJ cm-3). In such a regime, we successfully performed single-pulse silicon microstructuring. Using third-harmonic and near-IR microscopy, and molecular dynamics, we demonstrated that there is a low-density region in the center of a micromodification, surrounded by a "ring" with higher density, that could be an evidence of its micro-void structure. The formation of created micromodification could be controlled in situ using third-harmonic generation microscopy. The numerical simulation indicates that single-shot damage becomes possible due to electrons heating in the conduction band up to 8 eV (mean thermal energy) and the subsequent generation of microplasma with an overcritical density of 8.5 × 1021 cm-3. These results promise to be the foundation of a new approach of deep three-dimensional single-shot bulk micromachining of silicon.

Nonequilibrium band occupation and optical response of gold after ultrafast XUV excitation

Free electron lasers offer unique properties to study matter in states far from equilibrium as they combine short pulses with a large range of photon energies. In particular, the possibility to excite core states drives new relaxation pathways that, in turn, also change the properties of the optically and chemically active electrons. Here, we present a theoretical model for the dynamics of the nonequilibrium occupation of the different energy bands in solid gold driven by exciting deep core states. The resulting optical response is in excellent agreement with recent measurements and, combined with our model, provides a quantitative benchmark for the description of electron-phonon coupling in strongly driven gold. Focusing on sub-picosecond time scales, we find essential differences between the dynamics induced by XUV and visible light.

Visualizing Light-Induced Microstrain and Phase Transition in Lead-Free Perovskites Using Time-Resolved X-Ray Diffraction

Metal halide perovskites have emerged as promising materials for optoelectronic applications in the last decade. A large amount of effort has been made to investigate the interplay between the crystalline lattice and photoexcited charge carriers as it is vital to their optoelectronic performance. Among them, ultrafast laser spectroscopy has been intensively utilized to explore the charge carrier dynamics of perovskites, from which the local structural information can only be extracted indirectly. Here, we have applied a time-resolved X-ray diffraction technique to investigate the structural dynamics of prototypical two-dimensional lead-free halide perovskite Cs₃Bi₂Br₉ nanoparticles across temporal scales from 80 ps to microseconds. We observed a quick recoverable (a few ns) photoinduced microstrain up to 0.15% and a long existing lattice expansion (∼a few hundred nanoseconds) at mild laser fluence. Once the laser flux exceeds 1.4 mJ/cm², the microstrain saturates and the crystalline phase partially transfers into a disordered phase. This photoinduced transient structural change can recover within the nanosecond time scale. These results indicate that photoexcitation of charge carriers couples with lattice distortion, which fundamentally affects the dielectric environment and charge carrier transport.

Ultrafast infrared nano-imaging of far-from-equilibrium carrier and vibrational dynamics

Ultrafast infrared nano-imaging has demonstrated access to ultrafast carrier dynamics on the nanoscale in semiconductor, correlated-electron, or polaritonic materials. However, mostly limited to short-lived transient states, the contrast obtained has remained insufficient to probe important long-lived excitations, which arise from many-body interactions induced by strong perturbation among carriers, lattice phonons, or molecular vibrations. Here, we demonstrate ultrafast infrared nano-imaging based on excitation modulation and sideband detection to characterize electron and vibration dynamics with nano- to micro-second lifetimes. As an exemplary application to quantum materials, in phase-resolved ultrafast nano-imaging of the photoinduced insulator-to-metal transition in vanadium dioxide, a distinct transient nano-domain behavior is quantified. In another application to lead halide perovskites, transient vibrational nano-FTIR spatially resolves the excited-state polaron-cation coupling underlying the photovoltaic response. These examples show how heterodyne pump-probe nano-spectroscopy with low-repetition excitation extends ultrafast infrared nano-imaging to probe elementary processes in quantum and molecular materials in space and time.

Dynamics of Ultrafast Phase Transitions in (001) Si on the Shock-Wave Front

We demonstrate an ultrafast (<0.1 ps) reversible phase transition in silicon (Si) under ultrafast pressure loading using molecular dynamics. Si changes its structure from cubic diamond to β-Sn on the shock-wave front. The phase transition occurs when the shock-wave pressure exceeds 11 GPa. Atomic volume, centrosymmetry, and the X-ray-diffraction spectrum were revealed as effective indicators of phase-transition dynamics. The latter, being registered in actual experimental conditions, constitutes a breakthrough in the path towards simple X-ray optical cross-correlation and pump-probe experiments.

Rapid In-Situ Synthesis and Patterning of Edge-Unsaturated MoS2 by Femtosecond Laser-Induced Photo-Chemical Reaction

Molybdenum disulfide (MoS₂) is a representative transition metal sulfide that is widely used in gas and biological detection, energy storage, and integrated electronic devices due to its unique optoelectrical and chemical characteristics. To advance toward the miniaturization and on-chip integration of functional devices, it is strategically important to develop a high-precision and cost-effective method for the synthesis and integration of MoS₂ patterns and functional devices. Traditional methods require multiple steps and time-consuming processes such as material synthesis, transfer, and photolithography to fabricate MoS₂ patterns at the desired region on the substrate, significantly increasing the difficulty of manufacturing micro/nanodevices. In this work, we propose a single-step femtosecond laser-induced photochemical method which can realize the fabrication of arbitrary two-dimensional edge-unsaturated MoS₂ patterns with high efficiency in microscale. Based on this method, MoS₂ can be synthesized at a rate of 150 μm/s, 2 orders of magnitude faster than existing laser-based thermal decomposition methods without sacrificing the resolution and quality. The morphology and roughness of the MoS₂ pattern can be controlled by adjusting the laser parameters. Furthermore, the femtosecond laser direct writing (FLDW) method was used to fabricate microscale MoS₂-based gas detectors that can detect a variety of toxic gases with high sensitivity up to 0.5 ppm at room temperature. This FLDW method is not only applicable to the fabrication of high-precision MoS₂ patterns and integrated functional devices, it also provides an effective route for the development of other micro/nanodevices based on a broad range of transition metal sulfides and other functional materials.

Rapid Selective Ablation and High-Precision Patterning for Micro-Thermoelectric Devices Using Femtosecond Laser Directing Writing

Highly integrated miniature thermoelectric (TE) devices are desirable for applications of chip thermal management and self-powered energy harvesting. Currently, further performance improvement of micro-TE devices is largely limited by micro-nano-patterned processing, which shows the incompatibility with high-performance TE material fabrication or contradiction between machining accuracy and efficiency. This work presents a useful method to flexibly achieve high-precision array patterning for the micro-TE device through the femtosecond laser direct writing technique. By experimentally examining the material ablation process and numerically analyzing the electron-lattice temperature, the laser energy threshold for different materials is determined to obtain the selective removal between TE materials and metallic electrodes. Furthermore, the evaluation criteria are established between the formation quality of microgroove in the array structure and the laser pulse energy distribution, and the shape-control and property-control pattern processing can be realized through the reasonable control of the laser energy. Consequently, the Bi₂Te₃-based TE pattern with a competitive leg density (496 pairs/cm²) and a high filling factor (55%) is successfully constructed.

High resolution and time resolved photoemission spectroscopy for developing more efficient materials to reduce energy consumption and increase renewable energy production

Due to the increase of energy consumption and the resulting ecological challenge, a collective awareness leads to the development of renewable energies and more efficient materials to increase the green energy production. Development of efficient photovoltaic materials is very closely related to their chemical and electronic properties. A better knowledge of these imbricated properties is needed, in addition to a better comprehension of their interplay with charge transport mechanisms. Exciton creation and recombination processes, charge transfer and charge collection processes take place at the surface and interface of the photoactive materials. Photoemission spectroscopy as chemical specific and surface sensitive spectroscopic technique is a method of choice on the study of physical phenomena at the origin of photoconversion efficiency. Time resolved photoemission spectroscopy has been recently renewed interest covering time scale from fs to more than seconds. It permits to probe the dynamics of relaxation of photoexcited charges and determine their lifetime. It finds application in various materials used in solar photovoltaics. In this paper, we define the physical and chemical properties determined by the combination of high resolution and time resolved photoemission spectroscopy. We show examples dealing with the development of renewable energy and energy consumption reduction in agreement with the current ecological trend for a better future.

Inducing thermodynamically blocked atomic ordering via strongly driven nonequilibrium kinetics

Ultrafast light-matter interactions enable inducing exotic material phases by promoting access to kinetic processes blocked in equilibrium. Despite potential opportunities, actively using nonequilibrium kinetics for material discovery is limited by the poor understanding on intermediate states of driven systems. Here, using single-pulse time-resolved imaging with x-ray free-electron lasers, we found intermediate states of photoexcited bismuth nanoparticles that showed kinetically reversed surface ordering during ultrafast melting. This entropy-lowering reaction was further investigated by molecular dynamics simulations to reveal that observed kinetics were thermodynamically buried in equilibrium, which emphasized the critical role of electron-mediated ultrafast free-energy modification in inducing exotic material phases. This study demonstrated that ultrafast photoexcitations of electrons provide an efficient strategy to induce hidden material phases by overcoming thermodynamic barriers via nonequilibrium reaction pathways.