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Tang GJ, Chen XD, Sun L, Guo CH, Li MY, Tian ZT, Chen HH, Wang HW, Sun QY, Pan YD, He XT, Su YK, Dong JW. Broadband and fabrication-tolerant 3-dB couplers with topological valley edge modes. LIGHT, SCIENCE & APPLICATIONS 2024; 13:166. [PMID: 39009583 PMCID: PMC11250792 DOI: 10.1038/s41377-024-01512-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/16/2023] [Revised: 06/19/2024] [Accepted: 06/26/2024] [Indexed: 07/17/2024]
Abstract
3-dB couplers, which are commonly used in photonic integrated circuits for on-chip information processing, precision measurement, and quantum computing, face challenges in achieving robust performance due to their limited 3-dB bandwidths and sensitivity to fabrication errors. To address this, we introduce topological physics to nanophotonics, developing a framework for topological 3-dB couplers. These couplers exhibit broad working wavelength range and robustness against fabrication dimensional errors. By leveraging valley-Hall topology and mirror symmetry, the photonic-crystal-slab couplers achieve ideal 3-dB splitting characterized by a wavelength-insensitive scattering matrix. Tolerance analysis confirms the superiority on broad bandwidth of 48 nm and robust splitting against dimensional errors of 20 nm. We further propose a topological interferometer for on-chip distance measurement, which also exhibits robustness against dimensional errors. This extension of topological principles to the fields of interferometers, may open up new possibilities for constructing robust wavelength division multiplexing, temperature-drift-insensitive sensing, and optical coherence tomography applications.
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Affiliation(s)
- Guo-Jing Tang
- School of Physics & State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, 510275, China
| | - Xiao-Dong Chen
- School of Physics & State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, 510275, China
| | - Lu Sun
- State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Chao-Heng Guo
- School of Physics & State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, 510275, China
| | - Meng-Yu Li
- School of Physics & State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, 510275, China
| | - Zhong-Tao Tian
- School of Physics & State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, 510275, China
| | - Hou-Hong Chen
- School of Physics & State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, 510275, China
| | - Hong-Wei Wang
- State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Qi-Yao Sun
- State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Ying-Di Pan
- State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Xin-Tao He
- School of Physics & State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, 510275, China.
| | - Yi-Kai Su
- State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China.
| | - Jian-Wen Dong
- School of Physics & State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, 510275, China.
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Li R, Gong Y, Huang H, Zhou Y, Mao S, Wei Z, Zhang Z. Photonics for Neuromorphic Computing: Fundamentals, Devices, and Opportunities. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2312825. [PMID: 39011981 DOI: 10.1002/adma.202312825] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/28/2023] [Revised: 06/12/2024] [Indexed: 07/17/2024]
Abstract
In the dynamic landscape of Artificial Intelligence (AI), two notable phenomena are becoming predominant: the exponential growth of large AI model sizes and the explosion of massive amount of data. Meanwhile, scientific research such as quantum computing and protein synthesis increasingly demand higher computing capacities. As the Moore's Law approaches its terminus, there is an urgent need for alternative computing paradigms that satisfy this growing computing demand and break through the barrier of the von Neumann model. Neuromorphic computing, inspired by the mechanism and functionality of human brains, uses physical artificial neurons to do computations and is drawing widespread attention. This review studies the expansion of optoelectronic devices on photonic integration platforms that has led to significant growth in photonic computing, where photonic integrated circuits (PICs) have enabled ultrafast artificial neural networks (ANN) with sub-nanosecond latencies, low heat dissipation, and high parallelism. In particular, various technologies and devices employed in neuromorphic photonic AI accelerators, spanning from traditional optics to PCSEL lasers are examined. Lastly, it is recognized that existing neuromorphic technologies encounter obstacles in meeting the peta-level computing speed and energy efficiency threshold, and potential approaches in new devices, fabrication, materials, and integration to drive innovation are also explored. As the current challenges and barriers in cost, scalability, footprint, and computing capacity are resolved one-by-one, photonic neuromorphic systems are bound to co-exist with, if not replace, conventional electronic computers and transform the landscape of AI and scientific computing in the foreseeable future.
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Affiliation(s)
- Renjie Li
- School of Science and Engineering, Guangdong Key Laboratory of Optoelectronic Materials and Chips, Shenzhen Key Lab of Semiconductor Lasers, The Chinese University of Hong Kong, Shenzhen, Shenzhen, Guangdong, 518172, China
| | - Yuanhao Gong
- School of Science and Engineering, Guangdong Key Laboratory of Optoelectronic Materials and Chips, Shenzhen Key Lab of Semiconductor Lasers, The Chinese University of Hong Kong, Shenzhen, Shenzhen, Guangdong, 518172, China
| | - Hai Huang
- School of Science and Engineering, Guangdong Key Laboratory of Optoelectronic Materials and Chips, Shenzhen Key Lab of Semiconductor Lasers, The Chinese University of Hong Kong, Shenzhen, Shenzhen, Guangdong, 518172, China
| | - Yuze Zhou
- School of Science and Engineering, Guangdong Key Laboratory of Optoelectronic Materials and Chips, Shenzhen Key Lab of Semiconductor Lasers, The Chinese University of Hong Kong, Shenzhen, Shenzhen, Guangdong, 518172, China
| | - Sixuan Mao
- School of Science and Engineering, Guangdong Key Laboratory of Optoelectronic Materials and Chips, Shenzhen Key Lab of Semiconductor Lasers, The Chinese University of Hong Kong, Shenzhen, Shenzhen, Guangdong, 518172, China
| | - Zhijian Wei
- SONT Technologies Co. LTD, Shenzhen, Guangdong, 510245, China
| | - Zhaoyu Zhang
- School of Science and Engineering, Guangdong Key Laboratory of Optoelectronic Materials and Chips, Shenzhen Key Lab of Semiconductor Lasers, The Chinese University of Hong Kong, Shenzhen, Shenzhen, Guangdong, 518172, China
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Song W, Lin Z, Ji J, Sun J, Chen C, Wu S, Huang C, Yuan L, Zhu S, Li T. Bound-Extended Mode Transition in Type-II Synthetic Photonic Weyl Heterostructures. PHYSICAL REVIEW LETTERS 2024; 132:143801. [PMID: 38640373 DOI: 10.1103/physrevlett.132.143801] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/25/2023] [Accepted: 03/06/2024] [Indexed: 04/21/2024]
Abstract
Photonic structures with Weyl points (WPs), including type I and type II, promise nontrivial surface modes and intriguing light manipulations for their three-dimensional topological bands. While previous studies mainly focus on exploring WPs in a uniform Weyl structure, here we establish Weyl heterostructures (i.e., a nonuniform Weyl lattice) with different rotational orientations in the synthetic dimension by nanostructured photonic waveguides. In this work, we unveil a transition between bound and extended modes on the interface of type-II Weyl heterostructures by tuning their rotational phases, despite the reversed topological order across the interface. This mode transition is also manifested from the total transmission to total reflection at the interface. All of these unconventional effects are attributed to the tilted dispersion of type-II Weyl band structure that can lead to mismatched bands and gaps across the interface. As a comparison, the type-I Weyl heterostructures lack the phase transition due to the untilted band structure. This work establishes a flexible scheme of artificial Weyl heterostructures that opens a new avenue toward high-dimensional topological effects and significantly enhances our capabilities in on-chip light manipulations.
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Affiliation(s)
- Wange Song
- National Laboratory of Solid State Microstructures, Key Laboratory of Intelligent Optical Sensing and Manipulation, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, China
| | - Zhiyuan Lin
- National Laboratory of Solid State Microstructures, Key Laboratory of Intelligent Optical Sensing and Manipulation, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, China
| | - Jitao Ji
- National Laboratory of Solid State Microstructures, Key Laboratory of Intelligent Optical Sensing and Manipulation, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, China
| | - Jiacheng Sun
- National Laboratory of Solid State Microstructures, Key Laboratory of Intelligent Optical Sensing and Manipulation, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, China
| | - Chen Chen
- National Laboratory of Solid State Microstructures, Key Laboratory of Intelligent Optical Sensing and Manipulation, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, China
| | - Shengjie Wu
- National Laboratory of Solid State Microstructures, Key Laboratory of Intelligent Optical Sensing and Manipulation, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, China
| | - Chunyu Huang
- National Laboratory of Solid State Microstructures, Key Laboratory of Intelligent Optical Sensing and Manipulation, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, China
| | - Luqi Yuan
- State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Shining Zhu
- National Laboratory of Solid State Microstructures, Key Laboratory of Intelligent Optical Sensing and Manipulation, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, China
| | - Tao Li
- National Laboratory of Solid State Microstructures, Key Laboratory of Intelligent Optical Sensing and Manipulation, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, China
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Dai W, Yoda T, Moritake Y, Notomi M. Large transmittance contrast via 90-degree sharp bends in square lattice glide-symmetric photonic crystal waveguides. OPTICS EXPRESS 2024; 32:3946-3958. [PMID: 38297604 DOI: 10.1364/oe.513685] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/17/2023] [Accepted: 01/03/2024] [Indexed: 02/02/2024]
Abstract
We demonstrate an intriguing transmittance contrast in a glide-symmetric square-lattice photonic crystal waveguide with a 90-degree sharp bend. The glide-symmetry gives rise to a degeneracy point in the band structure and separates a high-frequency and a low-frequency band. Previously, a similar large transmittance contrast between these two bands has been observed in glide-symmetric triangular- or honeycomb-lattice photonic crystals without inversion symmetry, and this phenomenon has been attributed to the valley-photonic effect. In this study, we demonstrate the first example of this phenomenon in square-lattice photonic crystals, which do not possess the valley effect. Our result sheds new light onto unexplored properties of glide-symmetric waveguides. We show that this phenomenon is related to the spatial distribution of circular polarization singularities in glide-symmetric waveguides. This work expands the possible designs of low-loss photonic circuits and provides a new understanding of light transmission via sharp bends in photonic crystal waveguides.
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Shao H, Wang Y, Yang G, Sang T. Topological transport in heterostructure of valley photonic crystals. OPTICS EXPRESS 2023; 31:32393-32403. [PMID: 37859044 DOI: 10.1364/oe.494644] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/03/2023] [Accepted: 09/06/2023] [Indexed: 10/21/2023]
Abstract
We propose a heterogeneous structure, which are composed of two valley photonic crystals (VPCs) with opposite valley Chern numbers and air channel. With the increasing width of the air channel, valley-locked waveguide modes are found in topological bandgap by analyzing energy bands. Finite element method (FEM) simulation results show that the fundamental and high order modes are valley-locked, propagating unidirectionally under the excitation of chiral source, and possess higher flux compared to the valley-locked topological edge state in the domain wall. Besides, the immunity to backscattering in bend and couplers, and the robustness to random disorders are discussed in detail. We also investigate the one-way multimode interference (MMI) effect based on valley-locked waveguide modes, and design topological beam splitters. Our study provides a novel idea for topological transport with high flux, and more freedom to design valley-locked waveguide devices, including bends, couplers and splitters.
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Zhang Y, Shen J, Li J, Wang H, Feng C, Zhang L, Sun L, Xu J, Liu M, Wang Y, Tian Y, Dong J, Su Y. High-speed electro-optic modulation in topological interface states of a one-dimensional lattice. LIGHT, SCIENCE & APPLICATIONS 2023; 12:206. [PMID: 37644006 PMCID: PMC10465510 DOI: 10.1038/s41377-023-01251-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/06/2023] [Revised: 07/14/2023] [Accepted: 08/03/2023] [Indexed: 08/31/2023]
Abstract
Electro-optic modulators are key components in data communication, microwave photonics, and quantum photonics. Modulation bandwidth, energy efficiency, and device dimension are crucial metrics of modulators. Here, we provide an important direction for the miniaturization of electro-optic modulators by reporting on ultracompact topological modulators. A topological interface state in a one-dimensional lattice is implemented on a thin-film lithium-niobate integrated platform. Due to the strong optical confinement of the interface state and the peaking enhancement of the electro-optic response, a topological cavity with a size of 1.6 × 140 μm2 enables a large modulation bandwidth of 104 GHz. The first topological modulator exhibits the most compact device size compared to reported LN modulators with bandwidths above 28 GHz, to the best of our knowledge. 100 Gb/s non-return-to-zero and 100 Gb/s four-level pulse amplitude modulation signals are generated. The switching energy is 5.4 fJ/bit, owing to the small electro-optic mode volume and low capacitance. The topological modulator accelerates the response time of topological photonic devices from the microsecond order to the picosecond order and provides an essential foundation for the implementation of large-scale lithium-niobate photonic integrated circuits.
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Affiliation(s)
- Yong Zhang
- State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China.
| | - Jian Shen
- State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Jingchi Li
- State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Hongwei Wang
- State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Chenglong Feng
- State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Lei Zhang
- State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Lu Sun
- State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Jian Xu
- Center for Advanced Electronic Materials and Devices, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Ming Liu
- Center for Advanced Electronic Materials and Devices, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Ying Wang
- Center for Advanced Electronic Materials and Devices, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Yonghui Tian
- Institute of Microelectronics and Key Laboratory for Magnetism and Magnetic Materials of MOE, School of Physical Science and Technology, Lanzhou University, Lanzhou, 730000, Gansu, China
| | - Jianwen Dong
- State Key Laboratory of Optoelectronic Materials and Technologies & School of Physics, Sun Yat-sen University, Guangzhou, 510275, China
| | - Yikai Su
- State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China.
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