1
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Palekar CC, Rosa B, Heermeier N, Shih CW, Limame I, Koulas-Simos A, Rahimi-Iman A, Reitzenstein S. Enhancement of Interlayer Exciton Emission in a TMDC Heterostructure via a Multi-Resonant Chirped Microresonator Upto Room Temperature. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2402624. [PMID: 39007260 DOI: 10.1002/adma.202402624] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/20/2024] [Revised: 07/02/2024] [Indexed: 07/16/2024]
Abstract
We report on multi-resonance chirped distributed Bragg reflector (DBR) microcavities. These systems are employed to investigate the light-mater interaction with both intra- and inter-layer excitons of transition metal dichalcogenide (TMDC) bilayer heterostructures. The chirped DBRs consisting of SiO2 and Si3N4 layers of gradually varying thickness exhibit a broad stopband with a width exceeding 600 nm. Importantly, the structures provide multiple resonances across a broad spectral range, which can be matched to resonances of the embedded TMDC heterostructures. Studying cavity-coupled emission of both intra- and inter-layer excitons from an integrated WSe2/MoSe2 heterostructure in a chirped microcavity system, an enhanced interlayer exciton emission with a Purcell factor of 6.67 ± 1.02 at 4 K is observed. The cavity-enhanced emission of the interlayer exciton is used to investigate its temperature-dependent luminescence lifetime of 60 ps at room temperature. The cavity system modestly suppresses intralayer exciton emission by intentional detuning, thereby promoting a higher IX population and enhancing cavity-coupled interlayer exciton emission. This approach provides an intriguing platform for future studies of energetically distant and confined excitons in different semiconducting materials, which paves the way for various applications such as microlasers and single-photon sources by enabling precise emission control and utilizing multimode resonance light-matter interaction.
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Affiliation(s)
- Chirag C Palekar
- Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, 10623, Berlin, Germany
| | - Barbara Rosa
- Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, 10623, Berlin, Germany
| | - Niels Heermeier
- Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, 10623, Berlin, Germany
| | - Ching-Wen Shih
- Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, 10623, Berlin, Germany
| | - Imad Limame
- Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, 10623, Berlin, Germany
| | - Aris Koulas-Simos
- Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, 10623, Berlin, Germany
| | - Arash Rahimi-Iman
- I. Physikalisches Institut and Center for Materials Research, Justus-Liebig-Universität Gießen, 35392, Gießen, Germany
| | - Stephan Reitzenstein
- Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, 10623, Berlin, Germany
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2
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Luo W, Song R, Whetten BG, Huang D, Cheng X, Belyanin A, Jiang T, Raschke MB. Nonlinear Nano-Imaging of Interlayer Coupling in 2D Graphene-Semiconductor Heterostructures. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2307345. [PMID: 38279570 DOI: 10.1002/smll.202307345] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/31/2023] [Revised: 12/13/2023] [Indexed: 01/28/2024]
Abstract
The emergent electronic, spin, and other quantum properties of 2D heterostructures of graphene and transition metal dichalcogenides are controlled by the underlying interlayer coupling and associated charge and energy transfer dynamics. However, these processes are sensitive to interlayer distance and crystallographic orientation, which are in turn affected by defects, grain boundaries, or other nanoscale heterogeneities. This obfuscates the distinction between interlayer charge and energy transfer. Here, nanoscale imaging in coherent four-wave mixing (FWM) and incoherent two-photon photoluminescence (2PPL) is combined with a tip distance-dependent coupled rate equation model to resolve the underlying intra- and inter-layer dynamics while avoiding the influence of structural heterogeneities in mono- to multi-layer graphene/WSe2 heterostructures. With selective insertion of hBN spacer layers, it is shown that energy, as opposed to charge transfer, dominates the interlayer-coupled optical response. From the distinct nano-FWM and -2PPL tip-sample distance-dependent modification of interlayer and intralayer relaxation by tip-induced enhancement and quenching, an interlayer energy transfer time ofτ ET ≈ ( 0 . 35 - 0.15 + 0.65 ) $\tau _{\rm ET} \approx (0.35^{+0.65}_{-0.15})$ ps consistent with recent reports is derived. As a local probe technique, this approach highlights the ability to determine intrinsic sample properties even in the presence of large sample heterogeneity.
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Affiliation(s)
- Wenjin Luo
- MOE Key Laboratory of Advanced Micro-Structured Materials, Shanghai Frontiers Science Center of Digital Optics, Institute of Precision Optical Engineering and School of Physics Science and Engineering Tongji University, Shanghai, 200092, China
- Department of Physics and JILA, University of Colorado, Boulder, CO, 80309, USA
| | - Renkang Song
- MOE Key Laboratory of Advanced Micro-Structured Materials, Shanghai Frontiers Science Center of Digital Optics, Institute of Precision Optical Engineering and School of Physics Science and Engineering Tongji University, Shanghai, 200092, China
| | - Benjamin G Whetten
- Department of Physics and JILA, University of Colorado, Boulder, CO, 80309, USA
| | - Di Huang
- MOE Key Laboratory of Advanced Micro-Structured Materials, Shanghai Frontiers Science Center of Digital Optics, Institute of Precision Optical Engineering and School of Physics Science and Engineering Tongji University, Shanghai, 200092, China
| | - Xinbin Cheng
- MOE Key Laboratory of Advanced Micro-Structured Materials, Shanghai Frontiers Science Center of Digital Optics, Institute of Precision Optical Engineering and School of Physics Science and Engineering Tongji University, Shanghai, 200092, China
| | - Alexey Belyanin
- Department of Physics and Astronomy, Texas A&M University, College Station, TX, 77843, USA
| | - Tao Jiang
- MOE Key Laboratory of Advanced Micro-Structured Materials, Shanghai Frontiers Science Center of Digital Optics, Institute of Precision Optical Engineering and School of Physics Science and Engineering Tongji University, Shanghai, 200092, China
| | - Markus B Raschke
- Department of Physics and JILA, University of Colorado, Boulder, CO, 80309, USA
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3
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Dai DD, Fu L. Strong-Coupling Phases of Trions and Excitons in Electron-Hole Bilayers at Commensurate Densities. PHYSICAL REVIEW LETTERS 2024; 132:196202. [PMID: 38804948 DOI: 10.1103/physrevlett.132.196202] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/26/2023] [Accepted: 03/28/2024] [Indexed: 05/29/2024]
Abstract
We introduce density imbalanced electron-hole bilayers at a commensurate 2:1 density ratio as a platform for realizing novel phases of electrons, excitons, and trions. Through the independently tunable carrier densities and interlayer spacing, competition between kinetic energy, intralayer repulsion, and interlayer attraction yields a rich phase diagram. By a combination of theoretical analysis and numerical calculation, we find a variety of strong-coupling phases in different parameter regions, including quantum crystals of electrons, excitons, and trions. We also propose an "electron-exciton supersolid" phase that features electron crystallization and exciton superfluidity simultaneously. The material realization and experimental signature of these phases are discussed in the context of semiconductor transition metal dichalcogenide bilayers.
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Affiliation(s)
- David D Dai
- Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
| | - Liang Fu
- Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
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4
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Li J, Yang R, Higashitarumizu N, Dai S, Wu J, Javey A, Grigoropoulos CP. Transient Nanoscopy of Exciton Dynamics in 2D Transition Metal Dichalcogenides. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2311568. [PMID: 38588584 DOI: 10.1002/adma.202311568] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/02/2023] [Revised: 03/18/2024] [Indexed: 04/10/2024]
Abstract
The electronic and optical properties of 2D transition metal dichalcogenides are dominated by strong excitonic resonances. Exciton dynamics plays a critical role in the functionality and performance of many miniaturized 2D optoelectronic devices; however, the measurement of nanoscale excitonic behaviors remains challenging. Here, a near-field transient nanoscopy is reported to probe exciton dynamics beyond the diffraction limit. Exciton recombination and exciton-exciton annihilation processes in monolayer and bilayer MoS2 are studied as the proof-of-concept demonstration. Moreover, with the capability to access local sites, intriguing exciton dynamics near the monolayer-bilayer interface and at the MoS2 nano-wrinkles are resolved. Such nanoscale resolution highlights the potential of this transient nanoscopy for fundamental investigation of exciton physics and further optimization of functional devices.
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Affiliation(s)
- Jingang Li
- Laser Thermal Laboratory, Department of Mechanical Engineering, University of California, Berkeley, CA, 94720, USA
| | - Rundi Yang
- Laser Thermal Laboratory, Department of Mechanical Engineering, University of California, Berkeley, CA, 94720, USA
| | - Naoki Higashitarumizu
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Siyuan Dai
- Materials Research and Education Center, Department of Mechanical Engineering, Auburn University, Auburn, AL, 36849, USA
| | - Junqiao Wu
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - Ali Javey
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Costas P Grigoropoulos
- Laser Thermal Laboratory, Department of Mechanical Engineering, University of California, Berkeley, CA, 94720, USA
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5
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Ge A, Ge X, Sun L, Lu X, Ma L, Zhao X, Yao B, Zhang X, Zhang T, Jing W, Zhou X, Shen X, Lu W. Unraveling the strain tuning mechanism of interlayer excitons in WSe 2/MoSe 2heterostructure. NANOTECHNOLOGY 2024; 35:175207. [PMID: 38266306 DOI: 10.1088/1361-6528/ad2232] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/04/2023] [Accepted: 01/23/2024] [Indexed: 01/26/2024]
Abstract
Atomically thin transition metal dichalcogenides (TMDs) exhibit rich excitonic physics, due to reduced dielectric screening and strong Coulomb interactions. Especially, some attractive topics in modern condensed matter physics, such as correlated insulator, superconductivity, topological excitons bands, are recently reported in stacking two monolayer (ML) TMDs. Here, we clearly reveal the tuning mechanism of tensile strain on interlayer excitons (IEXs) and intralayer excitons (IAXs) in WSe2/MoSe2heterostructure (HS) at low temperature. We utilize the cryogenic tensile strain platform to stretch the HS, and measure by micro-photoluminescence (μ-PL). The PL peaks redshifts of IEXs and IAXs in WSe2/MoSe2HS under tensile strain are well observed. The first-principles calculations by using density functional theory reveals the PL peaks redshifts of IEXs and IAXs origin from bandgap shrinkage. The calculation results also show the Mo-4d states dominating conduction band minimum shifts of the ML MoSe2plays a dominant role in the redshifts of IEXs. This work provides new insights into understanding the tuning mechanism of tensile strain on IEXs and IAXs in two-dimensional (2D) HS, and paves a way to the development of flexible optoelectronic devices based on 2D materials.
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Affiliation(s)
- Anping Ge
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, People's Republic of China
- University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Xun Ge
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, People's Republic of China
| | - Liaoxin Sun
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, People's Republic of China
- University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Xinle Lu
- Key Laboratory of Polar Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, People's Republic of China
| | - Lei Ma
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, People's Republic of China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, People's Republic of China
| | - Xinchao Zhao
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, People's Republic of China
- University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Bimu Yao
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, People's Republic of China
- University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Xin Zhang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, People's Republic of China
- Department of Physics, Shanghai Normal University, Shanghai, 200234, People's Republic of China
| | - Tao Zhang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, People's Republic of China
- University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Wenji Jing
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, People's Republic of China
- University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Xiaohao Zhou
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, People's Republic of China
| | - Xuechu Shen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, People's Republic of China
| | - Wei Lu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, People's Republic of China
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6
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Koo Y, Moon T, Kang M, Joo H, Lee C, Lee H, Kravtsov V, Park KD. Dynamical control of nanoscale light-matter interactions in low-dimensional quantum materials. LIGHT, SCIENCE & APPLICATIONS 2024; 13:30. [PMID: 38272869 PMCID: PMC10810844 DOI: 10.1038/s41377-024-01380-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/28/2023] [Revised: 11/26/2023] [Accepted: 01/10/2024] [Indexed: 01/27/2024]
Abstract
Tip-enhanced nano-spectroscopy and -imaging have significantly advanced our understanding of low-dimensional quantum materials and their interactions with light, providing a rich insight into the underlying physics at their natural length scale. Recently, various functionalities of the plasmonic tip expand the capabilities of the nanoscopy, enabling dynamic manipulation of light-matter interactions at the nanoscale. In this review, we focus on a new paradigm of the nanoscopy, shifting from the conventional role of imaging and spectroscopy to the dynamical control approach of the tip-induced light-matter interactions. We present three different approaches of tip-induced control of light-matter interactions, such as cavity-gap control, pressure control, and near-field polarization control. Specifically, we discuss the nanoscale modifications of radiative emissions for various emitters from weak to strong coupling regime, achieved by the precise engineering of the cavity-gap. Furthermore, we introduce recent works on light-matter interactions controlled by tip-pressure and near-field polarization, especially tunability of the bandgap, crystal structure, photoluminescence quantum yield, exciton density, and energy transfer in a wide range of quantum materials. We envision that this comprehensive review not only contributes to a deeper understanding of the physics of nanoscale light-matter interactions but also offers a valuable resource to nanophotonics, plasmonics, and materials science for future technological advancements.
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Affiliation(s)
- Yeonjeong Koo
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Taeyoung Moon
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Mingu Kang
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Huitae Joo
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Changjoo Lee
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Hyeongwoo Lee
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Vasily Kravtsov
- School of Physics and Engineering, ITMO University, Saint Petersburg, 197101, Russia
| | - Kyoung-Duck Park
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea.
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7
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Kang M, Kim SJ, Joo H, Koo Y, Lee H, Lee HS, Suh YD, Park KD. Nanoscale Manipulation of Exciton-Trion Interconversion in a MoSe 2 Monolayer via Tip-Enhanced Cavity-Spectroscopy. NANO LETTERS 2024; 24:279-286. [PMID: 38117534 DOI: 10.1021/acs.nanolett.3c03920] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/21/2023]
Abstract
Emerging light-matter interactions in metal-semiconductor hybrid platforms have attracted considerable attention due to their potential applications in optoelectronic devices. Here, we demonstrate plasmon-induced near-field manipulation of trionic responses in a MoSe2 monolayer using tip-enhanced cavity-spectroscopy (TECS). The surface plasmon-polariton mode on the Au nanowire can locally manipulate the exciton (X0) and trion (X-) populations of MoSe2. Furthermore, we reveal that surface charges significantly influence the emission and interconversion processes of X0 and X-. In the TECS configuration, the localized plasmon significantly affects the distributions of X0 and X- due to the modified radiative decay rate. Additionally, within the TECS cavity, the electric doping effect and hot electron generation enable dynamic interconversion between X0 and X- at the nanoscale. This work advances our understanding of plasmon-exciton-hot electron interactions in metal-semiconductor-metal hybrid structures, providing a foundation for an optimal trion-based nano-optoelectronic platform.
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Affiliation(s)
- Mingu Kang
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Su Jin Kim
- Department of Physics, Research Institute for Nanoscale Science and Technology, Chungbuk National University, Cheongju 28644, Republic of Korea
| | - Huitae Joo
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Yeonjeong Koo
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Hyeongwoo Lee
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Hyun Seok Lee
- Department of Physics, Research Institute for Nanoscale Science and Technology, Chungbuk National University, Cheongju 28644, Republic of Korea
| | - Yung Doug Suh
- Department of Chemistry and School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919 Republic of Korea
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
| | - Kyoung-Duck Park
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
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8
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Aly MA, Enakerakpor EO, Koch M, Masenda H. Tuning Interlayer Exciton Emission with TMD Alloys in van der Waals Heterobilayers of Mo 0.5W 0.5Se 2 and Its Binary Counterparts. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2769. [PMID: 37887920 PMCID: PMC10609229 DOI: 10.3390/nano13202769] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/05/2023] [Revised: 10/12/2023] [Accepted: 10/14/2023] [Indexed: 10/28/2023]
Abstract
Semiconductor heterostructures have been the backbone of developments in electronic and optoelectronic devices. One class of structures of interest is the so-called type II band alignment, in which optically excited electrons and holes relax into different material layers. The unique properties observed in two-dimensional transition metal dichalcogenides and the possibility to engineer van der Waals heterostructures make them candidates for future high-tech devices. In these structures, electronic, optical, and magnetic properties can be tuned through the interlayer coupling, thereby opening avenues for developing new functional materials. We report the possibility of explicitly tuning the emission of interlayer exciton energies in the binary-ternary heterobilayer of Mo0.5W0.5Se2 with MoSe2 and WSe2. The respective interlayer energies of 1.516 eV and 1.490 eV were observed from low-temperature photoluminescence measurements for the MoSe2- and WSe2- based heterostructures, respectively. These interlayer emission energies are above those reported for MoSe2/WSe2 (≃1.30-1.45 eV). Consequently, binary-ternary heterostructure systems offer an extended energy range and tailored emission energies not accessible with the binary counterparts. Moreover, even though Mo0.5W0.5Se2 and MoSe2 have almost similar optical gaps, their band offsets are different, resulting in charge transfer between the monolayers following the optical excitation. Thus, confirming TMDs alloys can be used to tune the band-offsets, which adds another design parameter for application-specific optoelectronic devices.
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Affiliation(s)
- Mohammed Adel Aly
- Faculty of Physics and Materials Sciences Center, Philipps-Universität Marburg, 35032 Marburg, Germany
- Department of Physics, Faculty of Science, Ain Shams University, Cairo 11566, Egypt
| | | | - Martin Koch
- Faculty of Physics and Materials Sciences Center, Philipps-Universität Marburg, 35032 Marburg, Germany
| | - Hilary Masenda
- Faculty of Physics and Materials Sciences Center, Philipps-Universität Marburg, 35032 Marburg, Germany
- School of Physics, University of the Witwatersrand, Johannesburg 2050, South Africa
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9
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Chen Y, Sun M. Plexcitonics: plasmon-exciton coupling for enhancing spectroscopy, optical chirality, and nonlinearity. NANOSCALE 2023. [PMID: 37377142 DOI: 10.1039/d3nr01388j] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/29/2023]
Abstract
Plexcitonics is a rapidly developing interdisciplinary field that holds immense potential for the creation of innovative optical technologies and devices. This field focuses on investigating the interactions between plasmons and excitons in hybrid systems. In this review, we provide an overview of the fundamental principles of plasmonics and plexcitonics and discuss the latest advancements in plexcitonics. Specifically, we highlight the ability to manipulate plasmon-exciton interactions, the emerging field of tip-enhanced spectroscopy, and advancements in optical chirality and nonlinearity. These recent developments have spurred further research in the field of plexcitonics and offer inspiration for the design of advanced materials and devices with enhanced optical properties and functionalities.
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Affiliation(s)
- Yichuan Chen
- School of Mathematics and Physics, University of Science and Technology Beijing, Beijing, P. R. China.
| | - Mengtao Sun
- School of Mathematics and Physics, University of Science and Technology Beijing, Beijing, P. R. China.
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10
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Lee H, Koo Y, Kumar S, Jeong Y, Heo DG, Choi SH, Joo H, Kang M, Siddique RH, Kim KK, Lee HS, An S, Choo H, Park KD. All-optical control of high-purity trions in nanoscale waveguide. Nat Commun 2023; 14:1891. [PMID: 37045823 PMCID: PMC10097695 DOI: 10.1038/s41467-023-37481-1] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/14/2022] [Accepted: 03/20/2023] [Indexed: 04/14/2023] Open
Abstract
The generation of high-purity localized trions, dynamic exciton-trion interconversion, and their spatial modulation in two-dimensional (2D) semiconductors are building blocks for the realization of trion-based optoelectronic devices. Here, we present a method for the all-optical control of the exciton-to-trion conversion process and its spatial distributions in a MoS2 monolayer. We induce a nanoscale strain gradient in a 2D crystal transferred on a lateral metal-insulator-metal (MIM) waveguide and exploit propagating surface plasmon polaritons (SPPs) to localize hot electrons. These significantly increase the electrons and efficiently funnel excitons in the lateral MIM waveguide, facilitating complete exciton-to-trion conversion even at ambient conditions. Additionally, we modulate the SPP mode using adaptive wavefront shaping, enabling all-optical control of the exciton-to-trion conversion rate and trion distribution in a reversible manner. Our work provides a platform for harnessing excitonic quasiparticles efficiently in the form of trions at ambient conditions, enabling high-efficiency photoconversion.
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Affiliation(s)
- Hyeongwoo Lee
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Yeonjeong Koo
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Shailabh Kumar
- Department of Medical Engineering, California Institute of Technology (Caltech), Pasadena, CA, 91125, USA
- Meta Vision Lab, Samsung Advanced Institute of Technology (SAIT), Pasadena, CA, 91101, USA
| | - Yunjo Jeong
- Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Jeonbuk, 55324, Republic of Korea
| | - Dong Gwon Heo
- Department of Physics, Research Institute of Physics and Chemistry, Jeonbuk National University, Jeonju, 54896, Republic of Korea
| | - Soo Ho Choi
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon, 16419, Republic of Korea
| | - Huitae Joo
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Mingu Kang
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Radwanul Hasan Siddique
- Department of Medical Engineering, California Institute of Technology (Caltech), Pasadena, CA, 91125, USA
- Meta Vision Lab, Samsung Advanced Institute of Technology (SAIT), Pasadena, CA, 91101, USA
| | - Ki Kang Kim
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon, 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Hong Seok Lee
- Department of Physics, Research Institute of Physics and Chemistry, Jeonbuk National University, Jeonju, 54896, Republic of Korea.
| | - Sangmin An
- Department of Physics, Research Institute of Physics and Chemistry, Jeonbuk National University, Jeonju, 54896, Republic of Korea
| | - Hyuck Choo
- Department of Medical Engineering, California Institute of Technology (Caltech), Pasadena, CA, 91125, USA.
- Advanced Sensor Lab, Device Research Center, Samsung Advanced Institute of Technology (SAIT), Suwon, 16678, Republic of Korea.
| | - Kyoung-Duck Park
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea.
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11
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Faria Junior PE, Fabian J. Signatures of Electric Field and Layer Separation Effects on the Spin-Valley Physics of MoSe 2/WSe 2 Heterobilayers: From Energy Bands to Dipolar Excitons. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:1187. [PMID: 37049281 PMCID: PMC10096971 DOI: 10.3390/nano13071187] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/28/2023] [Revised: 03/22/2023] [Accepted: 03/24/2023] [Indexed: 06/19/2023]
Abstract
Multilayered van der Waals heterostructures based on transition metal dichalcogenides are suitable platforms on which to study interlayer (dipolar) excitons, in which electrons and holes are localized in different layers. Interestingly, these excitonic complexes exhibit pronounced valley Zeeman signatures, but how their spin-valley physics can be further altered due to external parameters-such as electric field and interlayer separation-remains largely unexplored. Here, we perform a systematic analysis of the spin-valley physics in MoSe2/WSe2 heterobilayers under the influence of an external electric field and changes of the interlayer separation. In particular, we analyze the spin (Sz) and orbital (Lz) degrees of freedom, and the symmetry properties of the relevant band edges (at K, Q, and Γ points) of high-symmetry stackings at 0° (R-type) and 60° (H-type) angles-the important building blocks present in moiré or atomically reconstructed structures. We reveal distinct hybridization signatures on the spin and the orbital degrees of freedom of low-energy bands, due to the wave function mixing between the layers, which are stacking-dependent, and can be further modified by electric field and interlayer distance variation. We find that H-type stackings favor large changes in the g-factors as a function of the electric field, e.g., from -5 to 3 in the valence bands of the Hhh stacking, because of the opposite orientation of Sz and Lz of the individual monolayers. For the low-energy dipolar excitons (direct and indirect in k-space), we quantify the electric dipole moments and polarizabilities, reflecting the layer delocalization of the constituent bands. Furthermore, our results show that direct dipolar excitons carry a robust valley Zeeman effect nearly independent of the electric field, but tunable by the interlayer distance, which can be rendered experimentally accessible via applied external pressure. For the momentum-indirect dipolar excitons, our symmetry analysis indicates that phonon-mediated optical processes can easily take place. In particular, for the indirect excitons with conduction bands at the Q point for H-type stackings, we find marked variations of the valley Zeeman (∼4) as a function of the electric field, which notably stands out from the other dipolar exciton species. Our analysis suggests that stronger signatures of the coupled spin-valley physics are favored in H-type stackings, which can be experimentally investigated in samples with twist angle close to 60°. In summary, our study provides fundamental microscopic insights into the spin-valley physics of van der Waals heterostructures, which are relevant to understanding the valley Zeeman splitting of dipolar excitonic complexes, and also intralayer excitons.
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Affiliation(s)
- Paulo E. Faria Junior
- Institute for Theoretical Physics, University of Regensburg, 93040 Regensburg, Germany
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