1
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Li Y, Chen S, Yu Y, Li C, Xiao TH. Inverse design of mid-infrared diamond waveguide beam splitter. OPTICS LETTERS 2024; 49:3620-3623. [PMID: 38950224 DOI: 10.1364/ol.526023] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/10/2024] [Accepted: 06/03/2024] [Indexed: 07/03/2024]
Abstract
Diamond is a supreme material for mid-infrared (MIR) integrated photonics as it has a transparency window up to 20 µm that covers the entire fingerprint region. However, its relatively low refractive index poses a challenge in designing an MIR diamond functional device with both small footprint and high transmission efficiency. Here we propose and demonstrate the inverse design of an MIR diamond waveguide beam splitter operating at the wavelength of 15 µm with a small footprint of ∼15 µm × ∼15 µm and a total transmission efficiency above 95%. Our work paves a new avenue for the design of compact and high-efficiency MIR diamond photonic devices.
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2
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Krumrein M, Nold R, Davidson-Marquis F, Bouamra A, Niechziol L, Steidl T, Peng R, Körber J, Stöhr R, Gross N, Smet JH, Ul-Hassan J, Udvarhelyi P, Gali A, Kaiser F, Wrachtrup J. Precise Characterization of a Waveguide Fiber Interface in Silicon Carbide. ACS PHOTONICS 2024; 11:2160-2170. [PMID: 38911842 PMCID: PMC11192030 DOI: 10.1021/acsphotonics.4c00538] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/22/2024] [Revised: 04/29/2024] [Accepted: 05/01/2024] [Indexed: 06/25/2024]
Abstract
Spin-active optical emitters in silicon carbide are excellent candidates toward the development of scalable quantum technologies. However, efficient photon collection is challenged by undirected emission patterns from optical dipoles, as well as low total internal reflection angles due to the high refractive index of silicon carbide. Based on recent advances with emitters in silicon carbide waveguides, we now demonstrate a comprehensive study of nanophotonic waveguide-to-fiber interfaces in silicon carbide. We find that across a large range of fabrication parameters, our experimental collection efficiencies remain above 90%. Further, by integrating silicon vacancy color centers into these waveguides, we demonstrate an overall photon count rate of 181 kilo-counts per second, which is an order of magnitude higher compared to standard setups. We also quantify the shift of the ground state spin states due to strain fields, which can be introduced by waveguide fabrication techniques. Finally, we show coherent electron spin manipulation with waveguide-integrated emitters with state-of-the-art coherence times of T 2 ∼ 42 μs. The robustness of our methods is very promising for quantum networks based on multiple orchestrated emitters.
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Affiliation(s)
- Marcel Krumrein
- 3rd
Institute of Physics, IQST, and Research Centre Scope, University of Stuttgart, Stuttgart 70569, Germany
| | - Raphael Nold
- 3rd
Institute of Physics, IQST, and Research Centre Scope, University of Stuttgart, Stuttgart 70569, Germany
| | - Flavie Davidson-Marquis
- Materials
Research and Technology (MRT) Department, Luxembourg Institute of Science and Technology, Belvaux 4362, Luxembourg
- Department
of Physics and Materials Science, University
of Luxembourg, Belvaux 4362, Luxembourg
| | - Arthur Bouamra
- 3rd
Institute of Physics, IQST, and Research Centre Scope, University of Stuttgart, Stuttgart 70569, Germany
| | - Lukas Niechziol
- 3rd
Institute of Physics, IQST, and Research Centre Scope, University of Stuttgart, Stuttgart 70569, Germany
| | - Timo Steidl
- 3rd
Institute of Physics, IQST, and Research Centre Scope, University of Stuttgart, Stuttgart 70569, Germany
| | - Ruoming Peng
- 3rd
Institute of Physics, IQST, and Research Centre Scope, University of Stuttgart, Stuttgart 70569, Germany
| | - Jonathan Körber
- 3rd
Institute of Physics, IQST, and Research Centre Scope, University of Stuttgart, Stuttgart 70569, Germany
| | - Rainer Stöhr
- 3rd
Institute of Physics, IQST, and Research Centre Scope, University of Stuttgart, Stuttgart 70569, Germany
| | - Nils Gross
- Solid
State Nanophysics, Max Planck Institute
for Solid State Research, Stuttgart 70569, Germany
| | - Jurgen H. Smet
- Solid
State Nanophysics, Max Planck Institute
for Solid State Research, Stuttgart 70569, Germany
| | - Jawad Ul-Hassan
- Department
of Physics, Chemistry and Biology, Linköping
University, Linköping 581 83, Sweden
| | - Péter Udvarhelyi
- Wigner
Research
Centre for Physics, Budapest 1121, Hungary
- Institute
of Physics, Department of Atomic Physics, Budapest University of Technology and Economics, Budapest 1117, Hungary
- MTA-WFK
Lendület “Momentum” Semiconductor Nanostructures
Research Group, Budapest 1525, Hungary
| | - Adam Gali
- Wigner
Research
Centre for Physics, Budapest 1121, Hungary
- Institute
of Physics, Department of Atomic Physics, Budapest University of Technology and Economics, Budapest 1117, Hungary
- MTA-WFK
Lendület “Momentum” Semiconductor Nanostructures
Research Group, Budapest 1525, Hungary
| | - Florian Kaiser
- 3rd
Institute of Physics, IQST, and Research Centre Scope, University of Stuttgart, Stuttgart 70569, Germany
- Materials
Research and Technology (MRT) Department, Luxembourg Institute of Science and Technology, Belvaux 4362, Luxembourg
- Department
of Physics and Materials Science, University
of Luxembourg, Belvaux 4362, Luxembourg
| | - Jörg Wrachtrup
- 3rd
Institute of Physics, IQST, and Research Centre Scope, University of Stuttgart, Stuttgart 70569, Germany
- Max
Planck
Institute for Solid State Research, Stuttgart 70569, Germany
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3
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Lai XY, Fang RZ, Li T, Su RZ, Huang J, Li H, You LX, Bao XH, Pan JW. Single-Shot Readout of a Nuclear Spin in Silicon Carbide. PHYSICAL REVIEW LETTERS 2024; 132:180803. [PMID: 38759186 DOI: 10.1103/physrevlett.132.180803] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/08/2024] [Accepted: 03/22/2024] [Indexed: 05/19/2024]
Abstract
Solid-state qubits with a photonic interface is very promising for quantum networks. Color centers in silicon carbide have shown excellent optical and spin coherence, even when integrated with membranes and nanostructures. Additionally, nuclear spins coupled with electron spins can serve as long-lived quantum memories. Pioneering work previously has realized the initialization of a single nuclear spin and demonstrated its entanglement with an electron spin. In this Letter, we report the first realization of single-shot readout for a nuclear spin in SiC. We obtain a deterministic nuclear spin initialization and readout fidelity of 94.95% with a measurement duration of 1 ms. With a dual-step readout scheme, we obtain a readout fidelity as high as 99.03% within 0.28 ms by sacrificing the success efficiency. Our Letter complements the experimental toolbox of harnessing both electron and nuclear spins in SiC for future quantum networks.
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Affiliation(s)
- Xiao-Yi Lai
- Hefei National Research Center for Physical Sciences at the Microscale and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Ren-Zhou Fang
- Hefei National Research Center for Physical Sciences at the Microscale and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Tao Li
- Hefei National Research Center for Physical Sciences at the Microscale and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Ren-Zhu Su
- Hefei National Research Center for Physical Sciences at the Microscale and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Jia Huang
- Shanghai Key Laboratory of Superconductor Integrated Circuit Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Hao Li
- Shanghai Key Laboratory of Superconductor Integrated Circuit Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Li-Xing You
- Shanghai Key Laboratory of Superconductor Integrated Circuit Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Xiao-Hui Bao
- Hefei National Research Center for Physical Sciences at the Microscale and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Jian-Wei Pan
- Hefei National Research Center for Physical Sciences at the Microscale and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
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4
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Zhuang ZP, Zeng HL, Chen XD, He XT, Dong JW. Topological Nature of Radiation Asymmetry in Bilayer Metagratings. PHYSICAL REVIEW LETTERS 2024; 132:113801. [PMID: 38563935 DOI: 10.1103/physrevlett.132.113801] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/16/2023] [Accepted: 02/13/2024] [Indexed: 04/04/2024]
Abstract
Manipulating radiation asymmetry of photonic structures is of particular interest in many photonic applications such as directional optical antenna, high efficiency on-chip lasers, and coherent light control. Here, we proposed a term of pseudopolarization to reveal the topological nature of radiation asymmetry in bilayer metagratings. Robust pseudopolarization vortex with an integer topological charge exists in P-symmetry metagrating, allowing for tunable directionality ranging from -1 to 1 in synthetic parameter space. When P-symmetry breaking, such vortex becomes pairs of C points due to the conservation law of charge, leading to the phase difference of radiation asymmetry from π/2 to 3π/2. Furthermore, topologically enabled coherent perfect absorption is robust with customized phase difference at will between two counterpropagating external light sources. This Letter can not only enrich the understanding of two particular topological photonic behaviors, i.e., bound state in the continuum and unidirectional guided resonance, but also provide a topological view on radiation asymmetry, opening an unexplored avenue for asymmetric light manipulation in on-chip laser, light-light switch, and quantum emitters.
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Affiliation(s)
- Ze-Peng Zhuang
- School of Physics and State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
| | - Hao-Long Zeng
- School of Physics and State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
| | - Xiao-Dong Chen
- School of Physics and State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
| | - Xin-Tao He
- School of Physics and State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
| | - Jian-Wen Dong
- School of Physics and State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
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5
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Xu F, Zhang S, Ma L, Hou Y, Li J, Denisenko A, Li Z, Spatz J, Wrachtrup J, Lei H, Cao Y, Wei Q, Chu Z. Quantum-enhanced diamond molecular tension microscopy for quantifying cellular forces. SCIENCE ADVANCES 2024; 10:eadi5300. [PMID: 38266085 PMCID: PMC10807811 DOI: 10.1126/sciadv.adi5300] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/02/2023] [Accepted: 12/22/2023] [Indexed: 01/26/2024]
Abstract
The constant interplay and information exchange between cells and the microenvironment are essential to their survival and ability to execute biological functions. To date, a few leading technologies such as traction force microscopy, optical/magnetic tweezers, and molecular tension-based fluorescence microscopy are broadly used in measuring cellular forces. However, the considerable limitations, regarding the sensitivity and ambiguities in data interpretation, are hindering our thorough understanding of mechanobiology. Here, we propose an innovative approach, namely, quantum-enhanced diamond molecular tension microscopy (QDMTM), to precisely quantify the integrin-based cell adhesive forces. Specifically, we construct a force-sensing platform by conjugating the magnetic nanotags labeled, force-responsive polymer to the surface of a diamond membrane containing nitrogen-vacancy centers. Notably, the cellular forces will be converted into detectable magnetic variations in QDMTM. After careful validation, we achieved the quantitative cellular force mapping by correlating measurement with the established theoretical model. We anticipate our method can be routinely used in studies like cell-cell or cell-material interactions and mechanotransduction.
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Affiliation(s)
- Feng Xu
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Materials and Engineering, Sichuan University, Chengdu 610065, China
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Pok Fu Lam, Hong Kong, China
| | - Shuxiang Zhang
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Materials and Engineering, Sichuan University, Chengdu 610065, China
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Pok Fu Lam, Hong Kong, China
| | - Linjie Ma
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Pok Fu Lam, Hong Kong, China
| | - Yong Hou
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Pok Fu Lam, Hong Kong, China
| | - Jie Li
- College of Biomass Science and Engineering, Sichuan University, Chengdu 610065, China
| | - Andrej Denisenko
- 3rd Institute of Physics, Research Center SCoPE and IQST, University of Stuttgart, 70569 Stuttgart, Germany
| | - Zifu Li
- National Engineering Research Center for Nanomedicine, College of Life Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Joachim Spatz
- Department for Cellular Biophysics, Max Planck Institute for Medical Research, Jahnstraße 29, 69120 Heidelberg, Germany
- Institute for Molecular Systems Engineering and Advanced Materials (IMSEAM), University of Heidelberg, Im Neuenheimer Feld 225, 69120 Heidelberg, Germany
| | - Jörg Wrachtrup
- 3rd Institute of Physics, Research Center SCoPE and IQST, University of Stuttgart, 70569 Stuttgart, Germany
- Max Planck Institute for Solid State Research, Stuttgart, Germany
| | - Hai Lei
- National Laboratory of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing 210093, China
| | - Yi Cao
- National Laboratory of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing 210093, China
| | - Qiang Wei
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Materials and Engineering, Sichuan University, Chengdu 610065, China
| | - Zhiqin Chu
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Pok Fu Lam, Hong Kong, China
- School of Biomedical Sciences, The University of Hong Kong, Pok Fu Lam, Hong Kong, China
- Advanced Biomedical Instrumentation Centre, Hong Kong Science Park, Shatin, New Territories, Hong Kong, China
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6
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Ngan K, Zhan Y, Dory C, Vučković J, Sun S. Quantum Photonic Circuits Integrated with Color Centers in Designer Nanodiamonds. NANO LETTERS 2023; 23:9360-9366. [PMID: 37782048 DOI: 10.1021/acs.nanolett.3c02645] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/03/2023]
Abstract
Diamond has emerged as a leading host material for solid-state quantum emitters, quantum memories, and quantum sensors. However, the challenges in fabricating photonic devices in diamond have limited its potential for use in quantum technologies. While various hybrid integration approaches have been developed for coupling diamond color centers with photonic devices defined in a heterogeneous material, these methods suffer from either large insertion loss at the material interface or evanescent light-matter coupling. Here, we present a new technique that enables the deterministic assembly of diamond color centers in a silicon nitride photonic circuit. Using this technique, we observe Purcell enhancement of silicon vacancy centers coupled to a silicon nitride ring resonator. Our hybrid integration approach has the potential for achieving the maximum possible light-matter interaction strength while maintaining low insertion loss and paves the way toward scalable manufacturing of large-scale quantum photonic circuits integrated with high-quality quantum emitters and spins.
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Affiliation(s)
- Kinfung Ngan
- JILA and Department of Physics, University of Colorado, Boulder, Colorado 80309, United States
| | - Yuan Zhan
- JILA and Department of Physics, University of Colorado, Boulder, Colorado 80309, United States
| | - Constantin Dory
- E. L. Ginzton Laboratory, Stanford University, Stanford, California 94305, United States
| | - Jelena Vučković
- E. L. Ginzton Laboratory, Stanford University, Stanford, California 94305, United States
| | - Shuo Sun
- JILA and Department of Physics, University of Colorado, Boulder, Colorado 80309, United States
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7
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Wang Y, Yang Z, Hu P, Hossain S, Liu Z, Ou TH, Ye J, Wu W. End-to-End Diverse Metasurface Design and Evaluation Using an Invertible Neural Network. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2561. [PMID: 37764590 PMCID: PMC10534592 DOI: 10.3390/nano13182561] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/06/2023] [Revised: 09/11/2023] [Accepted: 09/14/2023] [Indexed: 09/29/2023]
Abstract
Employing deep learning models to design high-performance metasurfaces has garnered significant attention due to its potential benefits in terms of accuracy and efficiency. A deep learning-based metasurface design framework typically comprises a forward prediction path for predicting optical responses and a backward retrieval path for generating geometrical configurations. In the forward design path, a specific geometrical configuration corresponds to a unique optical response. However, in the inverse design path, a single performance metric can correspond to multiple potential designs. This one-to-many mapping poses a significant challenge for deep learning models and can potentially impede their performance. Although representing the inverse path as a probabilistic distribution is a widely adopted method for tackling this problem, accurately capturing the posterior distribution to encompass all potential solutions remains an ongoing challenge. Furthermore, in most pioneering works, the forward and backward paths are captured using separate models. However, the knowledge acquired from the forward path does not contribute to the training of the backward model. This separation of models adds complexity to the system and can hinder the overall efficiency and effectiveness of the design framework. Here, we utilized an invertible neural network (INN) to simultaneously model both the forward and inverse process. Unlike other frameworks, INN focuses on the forward process and implicitly captures a probabilistic model for the inverse process. Given a specific optical response, the INN enables the recovery of the complete posterior over the parameter space. This capability allows for the generation of novel designs that are not present in the training data. Through the integration of the INN with the angular spectrum method, we have developed an efficient and automated end-to-end metasurface design and evaluation framework. This novel approach eliminates the need for human intervention and significantly speeds up the design process. Utilizing this advanced framework, we have effectively designed high-efficiency metalenses and dual-polarization metasurface holograms. This approach extends beyond dielectric metasurface design, serving as a general method for modeling optical inverse design problems in diverse optical fields.
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Affiliation(s)
- Yunxiang Wang
- Ming Hsieh Department of Electrical Engineering, University of Southern California, Los Angeles, CA 90089, USA
| | - Ziyuan Yang
- The High School Affiliated to Renmin University of China, CUIWEI Campus, Beijing 100086, China
| | - Pan Hu
- Ming Hsieh Department of Electrical Engineering, University of Southern California, Los Angeles, CA 90089, USA
| | - Sushmit Hossain
- Ming Hsieh Department of Electrical Engineering, University of Southern California, Los Angeles, CA 90089, USA
| | - Zerui Liu
- Ming Hsieh Department of Electrical Engineering, University of Southern California, Los Angeles, CA 90089, USA
| | - Tse-Hsien Ou
- Ming Hsieh Department of Electrical Engineering, University of Southern California, Los Angeles, CA 90089, USA
| | - Jiacheng Ye
- Ming Hsieh Department of Electrical Engineering, University of Southern California, Los Angeles, CA 90089, USA
| | - Wei Wu
- Ming Hsieh Department of Electrical Engineering, University of Southern California, Los Angeles, CA 90089, USA
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8
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Yang J, Guidry MA, Lukin DM, Yang K, Vučković J. Inverse-designed silicon carbide quantum and nonlinear photonics. LIGHT, SCIENCE & APPLICATIONS 2023; 12:201. [PMID: 37607918 PMCID: PMC10444789 DOI: 10.1038/s41377-023-01253-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/29/2023] [Revised: 08/05/2023] [Accepted: 08/06/2023] [Indexed: 08/24/2023]
Abstract
Inverse design has revolutionized the field of photonics, enabling automated development of complex structures and geometries with unique functionalities unmatched by classical design. However, the use of inverse design in nonlinear photonics has been limited. In this work, we demonstrate quantum and classical nonlinear light generation in silicon carbide nanophotonic inverse-designed Fabry-Pérot cavities. We achieve ultra-low reflector losses while targeting a pre-specified anomalous dispersion to reach optical parametric oscillation. By controlling dispersion through inverse design, we target a second-order phase-matching condition to realize second- and third-order nonlinear light generation in our devices, thereby extending stimulated parametric processes into the visible spectrum. This first realization of computational optimization for nonlinear light generation highlights the power of inverse design for nonlinear optics, in particular when combined with highly nonlinear materials such as silicon carbide.
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Affiliation(s)
- Joshua Yang
- E.L. Ginzton Laboratory, Stanford University, Stanford, CA, USA
| | | | - Daniil M Lukin
- E.L. Ginzton Laboratory, Stanford University, Stanford, CA, USA
| | - Kiyoul Yang
- E.L. Ginzton Laboratory, Stanford University, Stanford, CA, USA
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, USA
| | - Jelena Vučković
- E.L. Ginzton Laboratory, Stanford University, Stanford, CA, USA.
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9
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He L, Liu D, Gao J, Zhang W, Zhang H, Feng X, Huang Y, Cui K, Liu F, Zhang W, Zhang X. Super-compact universal quantum logic gates with inverse-designed elements. SCIENCE ADVANCES 2023; 9:eadg6685. [PMID: 37235652 DOI: 10.1126/sciadv.adg6685] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/13/2023] [Accepted: 04/20/2023] [Indexed: 05/28/2023]
Abstract
Integrated quantum photonic circuit is a promising platform for the realization of quantum information processing in the future. To achieve the large-scale quantum photonic circuits, the applied quantum logic gates should be as small as possible for the high-density integration on chips. Here, we report the implementation of super-compact universal quantum logic gates on silicon chips by the method of inverse design. In particular, the fabricated controlled-NOT gate and Hadamard gate are both nearly a vacuum wavelength, being the smallest optical quantum gates reported up to now. We further design the quantum circuit by cascading these fundamental gates to perform arbitrary quantum processing, where the corresponding size is about several orders smaller than that of previous quantum photonic circuits. Our study paves the way for the realization of large-scale quantum photonic chips with integrated sources and can have important applications in the field of quantum information processes.
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Affiliation(s)
- Lu He
- Key Laboratory of advanced optoelectronic quantum architecture and measurements of Ministry of Education, Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081 Beijing, China
| | - Dongning Liu
- Frontier Science Center for Quantum Information, Beijing National Research Center for Information Science and Technology (BNRist), Electronic Engineering Department, Tsinghua University, Beijing 100084, China
| | - Jingxing Gao
- Frontier Science Center for Quantum Information, Beijing National Research Center for Information Science and Technology (BNRist), Electronic Engineering Department, Tsinghua University, Beijing 100084, China
| | - Weixuan Zhang
- Key Laboratory of advanced optoelectronic quantum architecture and measurements of Ministry of Education, Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081 Beijing, China
| | - Huizhen Zhang
- Key Laboratory of advanced optoelectronic quantum architecture and measurements of Ministry of Education, Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081 Beijing, China
| | - Xue Feng
- Frontier Science Center for Quantum Information, Beijing National Research Center for Information Science and Technology (BNRist), Electronic Engineering Department, Tsinghua University, Beijing 100084, China
| | - Yidong Huang
- Frontier Science Center for Quantum Information, Beijing National Research Center for Information Science and Technology (BNRist), Electronic Engineering Department, Tsinghua University, Beijing 100084, China
- Beijing Academy of Quantum Information Sciences, 100193 Beijing, China
| | - Kaiyu Cui
- Frontier Science Center for Quantum Information, Beijing National Research Center for Information Science and Technology (BNRist), Electronic Engineering Department, Tsinghua University, Beijing 100084, China
| | - Fang Liu
- Frontier Science Center for Quantum Information, Beijing National Research Center for Information Science and Technology (BNRist), Electronic Engineering Department, Tsinghua University, Beijing 100084, China
| | - Wei Zhang
- Frontier Science Center for Quantum Information, Beijing National Research Center for Information Science and Technology (BNRist), Electronic Engineering Department, Tsinghua University, Beijing 100084, China
- Beijing Academy of Quantum Information Sciences, 100193 Beijing, China
| | - Xiangdong Zhang
- Key Laboratory of advanced optoelectronic quantum architecture and measurements of Ministry of Education, Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081 Beijing, China
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10
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Hansen SE, Arregui G, Babar AN, Albrechtsen M, Vosoughi Lahijani B, Christiansen RE, Stobbe S. Efficient low-reflection fully etched vertical free-space grating couplers for suspended silicon photonics. OPTICS EXPRESS 2023; 31:17424-17436. [PMID: 37381477 DOI: 10.1364/oe.485356] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/10/2023] [Accepted: 04/27/2023] [Indexed: 06/30/2023]
Abstract
We design and fabricate a grating coupler for interfacing suspended silicon photonic membranes with free-space optics while being compatible with single-step lithography and etching in 220 nm silicon device layers. The grating coupler design simultaneously and explicitly targets both high transmission into a silicon waveguide and low reflection back into the waveguide by means of a combination of a two-dimensional shape-optimization step followed by a three-dimensional parameterized extrusion. The designed coupler has a transmission of -6.6 dB (21.8 %), a 3 dB bandwidth of 75 nm, and a reflection of -27 dB (0.2 %). We experimentally validate the design by fabricating and optically characterizing a set of devices that allow the subtraction of all other sources of transmission losses as well as the inference of back-reflections from Fabry-Pérot fringes, and we measure a transmission of 19 % ± 2 %, a bandwidth of 65 nm and a reflection of 1.0 % ± 0.8 %.
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11
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Carfagno HS, McCabe LN, Zide JMO, Doty MF. A sleeve and bulk method for fabrication of photonic structures with features on multiple length scales. NANOTECHNOLOGY 2022; 34:035302. [PMID: 36130532 DOI: 10.1088/1361-6528/ac9391] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/26/2022] [Accepted: 09/20/2022] [Indexed: 06/15/2023]
Abstract
Traditional photonic structures such as photonic crystals utilize (a) large arrays of small features with the same size and pitch and (b) a small number of larger features such as diffraction outcouplers. In conventional nanofabrication, separate lithography and etch steps are used for small and large features in order to employ process parameters that lead to optimal pattern transfer and side-wall profiles for each feature-size category, thereby overcoming challenges associated with reactive ion etching lag. This approach cannot be scaled to more complex photonic structures such as those emerging from inverse design protocols. Those structures include features with a large range of sizes such that no distinction between small and large can be made. We develop a sleeve and bulk etch protocol that can be employed to simultaneously pattern features over a wide range of sizes while preserving the desired pattern transfer fidelity and sidewall profiles. This approach reduces the time required to develop a robust process flow, simplifies the fabrication of devices with wider ranges of feature sizes, and enables the fabrication of devices with increasingly complex structure.
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Affiliation(s)
- H S Carfagno
- Dept. of Materials Science and Engineering, University of Delaware, United States of America
| | - L N McCabe
- Dept. of Materials Science and Engineering, University of Delaware, United States of America
| | - J M O Zide
- Dept. of Materials Science and Engineering, University of Delaware, United States of America
| | - M F Doty
- Dept. of Materials Science and Engineering, University of Delaware, United States of America
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12
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Koch M, Hoese M, Bharadwaj V, Lang J, Hadden JP, Ramponi R, Jelezko F, Eaton SM, Kubanek A. Super-Poissonian Light Statistics from Individual Silicon Vacancy Centers Coupled to a Laser-Written Diamond Waveguide. ACS PHOTONICS 2022; 9:3366-3373. [PMID: 36281332 PMCID: PMC9585639 DOI: 10.1021/acsphotonics.2c00774] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/20/2022] [Indexed: 06/16/2023]
Abstract
Modifying light fields at the single-photon level is a key challenge for upcoming quantum technologies and can be realized in a scalable manner through integrated quantum photonics. Laser-written diamond photonics offers 3D fabrication capabilities and large mode-field diameters matched to fiber optic technology, though limiting the cooperativity at the single-emitter level. To realize large coupling efficiencies, we combine excitation of single shallow-implanted silicon vacancy centers via high numerical aperture optics with detection assisted by laser-written type-II waveguides. We demonstrate single-emitter extinction measurements with a cooperativity of 0.0050 and a relative beta factor of 13%. The transmission of resonant photons reveals single-photon subtraction from a quasi-coherent field resulting in super-Poissonian light statistics. Our architecture enables light field engineering in an integrated design on the single quantum level although the intrinsic cooperativity is low. Laser-written structures can be fabricated in three dimensions and with a natural connectivity to optical fiber arrays.
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Affiliation(s)
- Michael
K. Koch
- Institute
for Quantum Optics, Ulm University, UlmD-89081, Germany
- Center
for Integrated Quantum Science and Technology (IQst), Ulm University, UlmD-89081, Germany
| | - Michael Hoese
- Institute
for Quantum Optics, Ulm University, UlmD-89081, Germany
| | - Vibhav Bharadwaj
- Institute
for Quantum Optics, Ulm University, UlmD-89081, Germany
- Institute
for Photonics and Nanotechnologies (IFN)—CNR, Piazza Leonardo da Vinci, 32, Milano20133, Italy
| | - Johannes Lang
- Institute
for Quantum Optics, Ulm University, UlmD-89081, Germany
- Diatope
GmbH, UmmendorfD-88444, Germany
| | - John P. Hadden
- School
of Physics and Astronomy, Cardiff University, CardiffCF24 3AA, U.K.
| | - Roberta Ramponi
- Institute
for Photonics and Nanotechnologies (IFN)—CNR, Piazza Leonardo da Vinci, 32, Milano20133, Italy
| | - Fedor Jelezko
- Institute
for Quantum Optics, Ulm University, UlmD-89081, Germany
- Center for
Integrated Quantum Science and Technology (IQst), Ulm University, UlmD-89081, Germany
| | - Shane M. Eaton
- Institute
for Photonics and Nanotechnologies (IFN)—CNR, Piazza Leonardo da Vinci, 32, Milano20133, Italy
| | - Alexander Kubanek
- Institute
for Quantum Optics, Ulm University, UlmD-89081, Germany
- Center for
Integrated Quantum Science and Technology (IQst), Ulm University, UlmD-89081, Germany
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13
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Hammond AM, Slaby JB, Probst MJ, Ralph SE. Multi-layer inverse design of vertical grating couplers for high-density, commercial foundry interconnects. OPTICS EXPRESS 2022; 30:31058-31072. [PMID: 36242197 DOI: 10.1364/oe.466015] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/07/2022] [Accepted: 07/15/2022] [Indexed: 06/16/2023]
Abstract
Density-based topology optimization is used to design large-scale, multi-layer grating couplers that comply with commercial foundry fabrication constraints while simultaneously providing beam profiles that efficiently couple to a single-mode optical fiber without additional optics. Specifically, we describe the design process and experimentally demonstrate both single- and dual-polarization grating couplers that couple at normal incidence (0° from the normal) with low backreflections (-13.7 dB and -15.4 dB at the center wavelength), broad 3 dB bandwidths (75 nm and 89 nm), and standard coupling efficiencies (-4.7 dB and -7.0 dB). The dual-polarization grating couplers exhibit over 30 dB of polarization extinction across the entire band. The devices were fabricated on the GlobalFoundries 45CLO CMOS platform and characterized across three separate wafers. This new design approach produces distinct features for multiple foundry layers and yields emitters with arbitrary, user-specified far-field profiles.
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14
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Masnad MM, Zhang G, Xu DX, Grinberg Y, Liboiron-Ladouceur O. Fabrication error tolerant broadband mode converters and their working principles. OPTICS EXPRESS 2022; 30:25817-25829. [PMID: 36237103 DOI: 10.1364/oe.461979] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/05/2022] [Accepted: 06/20/2022] [Indexed: 06/16/2023]
Abstract
Computational inverse design techniques have shown potential to become reliable means for designing compact nanophotonic devices without compromising the performance. Much effort has been made to reduce the computation cost involved in the optimization process and obtain final designs that are robust to fabrication imperfections. In this work, we experimentally demonstrate TE0-TE1 and TE1-TE3 mode converters (MCs) on the silicon-on-insulator platform designed using the computationally efficient shape optimization method. These MCs have mode conversion efficiencies above 95%, and the insertion loss ranges from 0.3 dB to 1 dB over a wavelength span of 80 nm ranging from 1.5 µm to 1.58 µm. Maximum modal crosstalk found experimentally in the C-band is -19 dB. The conversion efficiency drops at most by 2.2% at 1.55 µm for 10 nm over/under etch, implying good robustness to dimensional variations. We present the mode conversion mechanism of these MCs by studying the simulated electromagnetic field patterns and validate with supportive data. We also demonstrate their performance in the time domain with a 28 Gbps OOK and a 20 GBaud PAM-4 payload transmissions, which supports their utility for high throughput data communications. The open eye diagrams exhibit Q-factors of 8 dB.
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15
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Atikian HA, Sinclair N, Latawiec P, Xiong X, Meesala S, Gauthier S, Wintz D, Randi J, Bernot D, DeFrances S, Thomas J, Roman M, Durrant S, Capasso F, Lončar M. Diamond mirrors for high-power continuous-wave lasers. Nat Commun 2022; 13:2610. [PMID: 35545622 PMCID: PMC9095672 DOI: 10.1038/s41467-022-30335-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/19/2021] [Accepted: 04/26/2022] [Indexed: 12/02/2022] Open
Abstract
High-power continuous-wave (CW) lasers are used in a variety of areas including industry, medicine, communications, and defense. Yet, conventional optics, which are based on multi-layer coatings, are damaged when illuminated by high-power CW laser light, primarily due to thermal loading. This hampers the effectiveness, restricts the scope and utility, and raises the cost and complexity of high-power CW laser applications. Here we demonstrate monolithic and highly reflective mirrors that operate under high-power CW laser irradiation without damage. In contrast to conventional mirrors, ours are realized by etching nanostructures into the surface of single-crystal diamond, a material with exceptional optical and thermal properties. We measure reflectivities of greater than 98% and demonstrate damage-free operation using 10 kW of CW laser light at 1070 nm, focused to a spot of 750 μm diameter. In contrast, we observe damage to a conventional dielectric mirror when illuminated by the same beam. Our results initiate a new category of optics that operate under extreme conditions, which has potential to improve or create new applications of high-power lasers. Mirrors that demonstrate 98% reflectivity and withstand 10 kilowatts of focused continuous-wave laser light are created by nanoscale fabrication of single-crystal diamond. The work finds applications in medicine, defence, industry, and communications.
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Affiliation(s)
- Haig A Atikian
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, 01238, USA
| | - Neil Sinclair
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, 01238, USA.,Division of Physics, Mathematics and Astronomy, and Alliance for Quantum Technologies (AQT), California Institute of Technology, Pasadena, CA, 91125, USA
| | - Pawel Latawiec
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, 01238, USA
| | - Xiao Xiong
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, 01238, USA.,Key Laboratory of Quantum Information and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Srujan Meesala
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, 01238, USA
| | - Scarlett Gauthier
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, 01238, USA
| | - Daniel Wintz
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, 01238, USA
| | - Joseph Randi
- Pennsylvania State University Applied Research Laboratory, Electro-Optics Center, Freeport, PA, 16229, USA
| | - David Bernot
- Pennsylvania State University Applied Research Laboratory, Electro-Optics Center, Freeport, PA, 16229, USA
| | - Sage DeFrances
- Pennsylvania State University Applied Research Laboratory, Electro-Optics Center, Freeport, PA, 16229, USA
| | - Jeffrey Thomas
- Pennsylvania State University Applied Research Laboratory, Electro-Optics Center, Freeport, PA, 16229, USA
| | - Michael Roman
- Laser Technology and Analysis Branch, Naval Surface Warfare Center, Dahlgren Division, Dahlgren, VA, 22448, USA
| | - Sean Durrant
- Laser Technology and Analysis Branch, Naval Surface Warfare Center, Dahlgren Division, Dahlgren, VA, 22448, USA
| | - Federico Capasso
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, 01238, USA
| | - Marko Lončar
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, 01238, USA.
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16
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Li Z, Pestourie R, Park JS, Huang YW, Johnson SG, Capasso F. Inverse design enables large-scale high-performance meta-optics reshaping virtual reality. Nat Commun 2022; 13:2409. [PMID: 35504864 PMCID: PMC9064995 DOI: 10.1038/s41467-022-29973-3] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/23/2021] [Accepted: 04/11/2022] [Indexed: 12/30/2022] Open
Abstract
Meta-optics has achieved major breakthroughs in the past decade; however, conventional forward design faces challenges as functionality complexity and device size scale up. Inverse design aims at optimizing meta-optics design but has been currently limited by expensive brute-force numerical solvers to small devices, which are also difficult to realize experimentally. Here, we present a general inverse-design framework for aperiodic large-scale (20k × 20k λ2) complex meta-optics in three dimensions, which alleviates computational cost for both simulation and optimization via a fast approximate solver and an adjoint method, respectively. Our framework naturally accounts for fabrication constraints via a surrogate model. In experiments, we demonstrate aberration-corrected metalenses working in the visible with high numerical aperture, poly-chromatic focusing, and large diameter up to the centimeter scale. Such large-scale meta-optics opens a new paradigm for applications, and we demonstrate its potential for future virtual-reality platforms by using a meta-eyepiece and a laser back-illuminated micro-Liquid Crystal Display.
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Affiliation(s)
- Zhaoyi Li
- Harvard John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, USA.
| | - Raphaël Pestourie
- Department of Mathematics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Joon-Suh Park
- Harvard John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, USA
- Nanophotonics Research Center, Korea Institute of Science and Technology, Seoul, Republic of Korea
| | - Yao-Wei Huang
- Harvard John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, USA
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore
- Department of Photonics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan
| | - Steven G Johnson
- Department of Mathematics, Massachusetts Institute of Technology, Cambridge, MA, USA.
| | - Federico Capasso
- Harvard John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, USA.
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17
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Chia C, Machielse B, Shams-Ansari A, Lončar M. Development of hard masks for reactive ion beam angled etching of diamond. OPTICS EXPRESS 2022; 30:14189-14201. [PMID: 35473168 DOI: 10.1364/oe.452826] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/12/2022] [Accepted: 02/24/2022] [Indexed: 06/14/2023]
Abstract
Diamond offers good optical properties and hosts bright color centers with long spin coherence times. Recent advances in angled-etching of diamond, specifically with reactive ion beam angled etching (RIBAE), have led to successful demonstration of quantum photonic devices operating at visible wavelengths. However, larger devices operating at telecommunication wavelengths have been difficult to fabricate due to the increased mask erosion, arising from the increased size of devices requiring longer etch times. We evaluated different mask materials for RIBAE of diamond photonic crystal nanobeams and waveguides, and how their thickness, selectivity, aspect ratio and sidewall smoothness affected the resultant etch profiles and optical performance. We found that a thick hydrogen silesquioxane (HSQ) layer on a thin alumina adhesion layer provided the best etch profile and optical performance. The techniques explored in this work can also be adapted to other bulk materials that are not available heteroepitaxially or as thin films-on-insulator.
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18
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Chen H, Zhang Z, Wang G, Shang Z, Li J, Zhao Z, Zhang M, Guo K, Yang J, Yan P. Nonlinear optical response of inverse-designed integrated photonic devices. OPTICS LETTERS 2022; 47:1254-1257. [PMID: 35230340 DOI: 10.1364/ol.453299] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/07/2022] [Accepted: 02/14/2022] [Indexed: 06/14/2023]
Abstract
Gradient-based optimization combined with the adjoint method has been demonstrated to be an efficient way to design a nano-structure with a vast number of degrees of freedom. However, most inverse-designed photonic devices are applied as linear photonic devices. Here, we demonstrate the nonlinear optical response in inverse-designed integrated splitters fabricated on a SiN platform. The splitting ratio is tunable under different incident powers. The thermo-optical effect can be used as an effective approach for adjusting the nonlinear optical response threshold and modulation depth of the device. These promising results indicate the great potential of inverse-designed photonic devices in nonlinear optics and optical communications.
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19
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Hammond AM, Oskooi A, Chen M, Lin Z, Johnson SG, Ralph SE. High-performance hybrid time/frequency-domain topology optimization for large-scale photonics inverse design. OPTICS EXPRESS 2022; 30:4467-4491. [PMID: 35209683 DOI: 10.1364/oe.442074] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/31/2021] [Accepted: 01/10/2022] [Indexed: 06/14/2023]
Abstract
We present a photonics topology optimization (TO) package capable of addressing a wide range of practical photonics design problems, incorporating robustness and manufacturing constraints, which can scale to large devices and massive parallelism. We employ a hybrid algorithm that builds on a mature time-domain (FDTD) package Meep to simultaneously solve multiple frequency-domain TO problems over a broad bandwidth. This time/frequency-domain approach is enhanced by new filter-design sources for the gradient calculation and new material-interpolation methods for optimizing dispersive media, as well as by multiple forms of computational parallelism. The package is available as free/open-source software with extensive tutorials and multi-platform support.
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20
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Babin C, Stöhr R, Morioka N, Linkewitz T, Steidl T, Wörnle R, Liu D, Hesselmeier E, Vorobyov V, Denisenko A, Hentschel M, Gobert C, Berwian P, Astakhov GV, Knolle W, Majety S, Saha P, Radulaski M, Son NT, Ul-Hassan J, Kaiser F, Wrachtrup J. Fabrication and nanophotonic waveguide integration of silicon carbide colour centres with preserved spin-optical coherence. NATURE MATERIALS 2022; 21:67-73. [PMID: 34795400 DOI: 10.1038/s41563-021-01148-3] [Citation(s) in RCA: 39] [Impact Index Per Article: 19.5] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/14/2021] [Accepted: 09/30/2021] [Indexed: 06/13/2023]
Abstract
Optically addressable spin defects in silicon carbide (SiC) are an emerging platform for quantum information processing compatible with nanofabrication processes and device control used by the semiconductor industry. System scalability towards large-scale quantum networks demands integration into nanophotonic structures with efficient spin-photon interfaces. However, degradation of the spin-optical coherence after integration in nanophotonic structures has hindered the potential of most colour centre platforms. Here, we demonstrate the implantation of silicon vacancy centres (VSi) in SiC without deterioration of their intrinsic spin-optical properties. In particular, we show nearly lifetime-limited photon emission and high spin-coherence times for single defects implanted in bulk as well as in nanophotonic waveguides created by reactive ion etching. Furthermore, we take advantage of the high spin-optical coherences of VSi centres in waveguides to demonstrate controlled operations on nearby nuclear spin qubits, which is a crucial step towards fault-tolerant quantum information distribution based on cavity quantum electrodynamics.
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Affiliation(s)
- Charles Babin
- 3rd Institute of Physics, IQST, and Research Centre SCoPE, University of Stuttgart, Stuttgart, Germany
| | - Rainer Stöhr
- 3rd Institute of Physics, IQST, and Research Centre SCoPE, University of Stuttgart, Stuttgart, Germany
| | - Naoya Morioka
- 3rd Institute of Physics, IQST, and Research Centre SCoPE, University of Stuttgart, Stuttgart, Germany
- Institute for Chemical Research, Kyoto University, Uji, Japan
| | - Tobias Linkewitz
- 3rd Institute of Physics, IQST, and Research Centre SCoPE, University of Stuttgart, Stuttgart, Germany
| | - Timo Steidl
- 3rd Institute of Physics, IQST, and Research Centre SCoPE, University of Stuttgart, Stuttgart, Germany
| | - Raphael Wörnle
- 3rd Institute of Physics, IQST, and Research Centre SCoPE, University of Stuttgart, Stuttgart, Germany
| | - Di Liu
- 3rd Institute of Physics, IQST, and Research Centre SCoPE, University of Stuttgart, Stuttgart, Germany
| | - Erik Hesselmeier
- 3rd Institute of Physics, IQST, and Research Centre SCoPE, University of Stuttgart, Stuttgart, Germany
| | - Vadim Vorobyov
- 3rd Institute of Physics, IQST, and Research Centre SCoPE, University of Stuttgart, Stuttgart, Germany
| | - Andrej Denisenko
- 3rd Institute of Physics, IQST, and Research Centre SCoPE, University of Stuttgart, Stuttgart, Germany
| | - Mario Hentschel
- 4th Institute of Physics, IQST, and Research Centre SCoPE, University of Stuttgart, Stuttgart, Germany
| | - Christian Gobert
- Fraunhofer Institute for Integrated Systems and Device Technology IISB, Erlangen, Germany
| | - Patrick Berwian
- Fraunhofer Institute for Integrated Systems and Device Technology IISB, Erlangen, Germany
| | - Georgy V Astakhov
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Dresden, Germany
| | - Wolfgang Knolle
- Department of Sensoric Surfaces and Functional Interfaces, Leibniz-Institute of Surface Engineering (IOM), Leipzig, Germany
| | - Sridhar Majety
- Department of Electrical and Computer Engineering, University of California, Davis, CA, USA
| | - Pranta Saha
- Department of Electrical and Computer Engineering, University of California, Davis, CA, USA
| | - Marina Radulaski
- Department of Electrical and Computer Engineering, University of California, Davis, CA, USA
| | - Nguyen Tien Son
- Department of Physics, Chemistry and Biology, Linköping University, Linköping, Sweden
| | - Jawad Ul-Hassan
- Department of Physics, Chemistry and Biology, Linköping University, Linköping, Sweden
| | - Florian Kaiser
- 3rd Institute of Physics, IQST, and Research Centre SCoPE, University of Stuttgart, Stuttgart, Germany.
| | - Jörg Wrachtrup
- 3rd Institute of Physics, IQST, and Research Centre SCoPE, University of Stuttgart, Stuttgart, Germany
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21
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Meng Y, Chen Y, Lu L, Ding Y, Cusano A, Fan JA, Hu Q, Wang K, Xie Z, Liu Z, Yang Y, Liu Q, Gong M, Xiao Q, Sun S, Zhang M, Yuan X, Ni X. Optical meta-waveguides for integrated photonics and beyond. LIGHT, SCIENCE & APPLICATIONS 2021; 10:235. [PMID: 34811345 PMCID: PMC8608813 DOI: 10.1038/s41377-021-00655-x] [Citation(s) in RCA: 72] [Impact Index Per Article: 24.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/22/2021] [Revised: 09/17/2021] [Accepted: 09/28/2021] [Indexed: 05/13/2023]
Abstract
The growing maturity of nanofabrication has ushered massive sophisticated optical structures available on a photonic chip. The integration of subwavelength-structured metasurfaces and metamaterials on the canonical building block of optical waveguides is gradually reshaping the landscape of photonic integrated circuits, giving rise to numerous meta-waveguides with unprecedented strength in controlling guided electromagnetic waves. Here, we review recent advances in meta-structured waveguides that synergize various functional subwavelength photonic architectures with diverse waveguide platforms, such as dielectric or plasmonic waveguides and optical fibers. Foundational results and representative applications are comprehensively summarized. Brief physical models with explicit design tutorials, either physical intuition-based design methods or computer algorithms-based inverse designs, are cataloged as well. We highlight how meta-optics can infuse new degrees of freedom to waveguide-based devices and systems, by enhancing light-matter interaction strength to drastically boost device performance, or offering a versatile designer media for manipulating light in nanoscale to enable novel functionalities. We further discuss current challenges and outline emerging opportunities of this vibrant field for various applications in photonic integrated circuits, biomedical sensing, artificial intelligence and beyond.
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Affiliation(s)
- Yuan Meng
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, 100084, Beijing, China
| | - Yizhen Chen
- Shanghai Engineering Research Center of Ultra-Precision Optical Manufacturing and School of Information, Science and Technology, Fudan University, Shanghai, 200433, China
| | - Longhui Lu
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Yimin Ding
- Department of Electrical Engineering, Pennsylvania State University, University Park, PA, 16802, USA
| | - Andrea Cusano
- Optoelectronic Division, Department of Engineering, University of Sannio, I-82100, Benevento, Italy
| | - Jonathan A Fan
- Department of Electrical Engineering, Stanford University, Stanford, CA, 94305, USA
| | - Qiaomu Hu
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Kaiyuan Wang
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Zhenwei Xie
- Nanophotonics Research Centre, Shenzhen Key Laboratory of Micro-Scale Optical Information Technology, Shenzhen University, Shenzhen, 518060, China
| | - Zhoutian Liu
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, 100084, Beijing, China
| | - Yuanmu Yang
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, 100084, Beijing, China
| | - Qiang Liu
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, 100084, Beijing, China
- Key Laboratory of Photonic Control Technology, Ministry of Education, Tsinghua University, 100084, Beijing, China
| | - Mali Gong
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, 100084, Beijing, China
- Key Laboratory of Photonic Control Technology, Ministry of Education, Tsinghua University, 100084, Beijing, China
| | - Qirong Xiao
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, 100084, Beijing, China.
- Key Laboratory of Photonic Control Technology, Ministry of Education, Tsinghua University, 100084, Beijing, China.
| | - Shulin Sun
- Shanghai Engineering Research Center of Ultra-Precision Optical Manufacturing and School of Information, Science and Technology, Fudan University, Shanghai, 200433, China.
- Yiwu Research Institute of Fudan University, Chengbei Road, Yiwu City, 322000, Zhejiang, China.
| | - Minming Zhang
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China.
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, Hubei, China.
| | - Xiaocong Yuan
- Nanophotonics Research Centre, Shenzhen Key Laboratory of Micro-Scale Optical Information Technology, Shenzhen University, Shenzhen, 518060, China
| | - Xingjie Ni
- Department of Electrical Engineering, Pennsylvania State University, University Park, PA, 16802, USA
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22
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Hammond AM, Oskooi A, Johnson SG, Ralph SE. Photonic topology optimization with semiconductor-foundry design-rule constraints. OPTICS EXPRESS 2021; 29:23916-23938. [PMID: 34614647 DOI: 10.1364/oe.431188] [Citation(s) in RCA: 13] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/13/2021] [Accepted: 06/25/2021] [Indexed: 06/13/2023]
Abstract
We present a unified density-based topology-optimization framework that yields integrated photonic designs optimized for manufacturing constraints including all those of commercial semiconductor foundries. We introduce a new method to impose minimum-area and minimum-enclosed-area constraints, and simultaneously adapt previous techniques for minimum linewidth, linespacing, and curvature, all of which are implemented without any additional re-parameterizations. Furthermore, we show how differentiable morphological transforms can be used to produce devices that are robust to over/under-etching while also satisfying manufacturing constraints. We demonstrate our methodology by designing three broadband silicon-photonics devices for nine different foundry-constraint combinations.
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23
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Regan B, Trycz A, Fröch JE, Schaeper OC, Kim S, Aharonovich I. Nanofabrication of high Q, transferable diamond resonators. NANOSCALE 2021; 13:8848-8854. [PMID: 33949563 DOI: 10.1039/d1nr00749a] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Advancement of diamond based photonic circuitry requires robust fabrication protocols of key components - including diamond resonators and cavities. Here, we present 1D (nanobeam) photonic crystal cavities generated from single crystal diamond membranes utilising a metallic tungsten layer as a restraining, conductive and removable hard mask. The use of tungsten instead of a more conventional silicon oxide layer enables good repeatability and reliability of the fabrication procedures. The process yields high quality diamond cavities with quality factors (Q-factors) approaching 1 × 104. Finally, we show that the cavities can be picked up and transferred onto a trenched substrate to realise fully suspended diamond cavities. Our fabrication process demonstrates the capability of diamond membranes as modular components for broader diamond based quantum photonic circuitry.
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Affiliation(s)
- Blake Regan
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia.
| | - Aleksandra Trycz
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia.
| | - Johannes E Fröch
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia.
| | - Otto Cranwell Schaeper
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia.
| | - Sejeong Kim
- Department of Electrical and Electronic Engineering, University of Melbourne, Melbourne, Victoria 3010, Australia
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia. and Centre of Excellence for Transformative Meta-Optical Systems, University of Technology Sydney, Ultimo, NSW 2007, Australia
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Gao X, Erhard M, Zeilinger A, Krenn M. Computer-Inspired Concept for High-Dimensional Multipartite Quantum Gates. PHYSICAL REVIEW LETTERS 2020. [PMID: 32794870 DOI: 10.1038/s42254-020-0230-4] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/11/2023]
Abstract
An open question in quantum optics is how to manipulate and control complex quantum states in an experimentally feasible way. Here we present concepts for transformations of high-dimensional multiphotonic quantum systems. The proposals rely on two new ideas: (i) a novel high-dimensional quantum nondemolition measurement, (ii) the encoding and decoding of the entire quantum transformation in an ancillary state for sharing the necessary quantum information between the involved parties. Many solutions can readily be performed in laboratories around the world and thereby we identify important pathways for experimental research in the near future. The concepts have been found using the computer algorithm melvin for designing computer-inspired quantum experiments. As opposed to the field of machine learning, here the human learns new scientific concepts by interpreting and analyzing the results presented by the machine. This demonstrates that computer algorithms can inspire new ideas in science, which has a widely unexplored potential that goes far beyond experimental quantum information science.
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Affiliation(s)
- Xiaoqin Gao
- Faculty of Physics, University of Vienna, Vienna, 1190, Austria
- Institute for Quantum Optics and Quantum Information (IQOQI) Vienna, Austrian Academy of Sciences, Vienna, 1190, Austria
- National Mobile Communications Research Laboratory and Quantum Information Research Center, Southeast University, Nanjing, 210096, China
| | - Manuel Erhard
- Faculty of Physics, University of Vienna, Vienna, 1190, Austria
- Institute for Quantum Optics and Quantum Information (IQOQI) Vienna, Austrian Academy of Sciences, Vienna, 1190, Austria
| | - Anton Zeilinger
- Faculty of Physics, University of Vienna, Vienna, 1190, Austria
- Institute for Quantum Optics and Quantum Information (IQOQI) Vienna, Austrian Academy of Sciences, Vienna, 1190, Austria
| | - Mario Krenn
- Faculty of Physics, University of Vienna, Vienna, 1190, Austria
- Institute for Quantum Optics and Quantum Information (IQOQI) Vienna, Austrian Academy of Sciences, Vienna, 1190, Austria
- Department of Chemistry and Computer Science, University of Toronto, Toronto, Ontario M5S 3G4, Canada
- Vector Institute for Artificial Intelligence, Toronto, Ontario M5G 1M1, Canada
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25
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Wildi T, Kiss M, Quack N. Diffractive optical elements in single crystal diamond. OPTICS LETTERS 2020; 45:3458-3461. [PMID: 32630871 DOI: 10.1364/ol.393679] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/25/2020] [Accepted: 05/18/2020] [Indexed: 06/11/2023]
Abstract
We demonstrate the design, fabrication, and experimental characterization of near-field binary phase transmission diffractive optical elements (DOEs) in single crystal diamond. Top-hat and arbitrary pattern DOE beam shapers were numerically optimized using an iterative Fourier transform algorithm (IFTA). Commercially available single crystal diamond plates (3mm×3mm×0.3mm) were patterned using hardmask deposition (α-Si), e-beam lithography, and O2 plasma-based diamond reactive ion etching. The resulting binary phase relief patterns were characterized using scanning electron microscopy (SEM) and atomic force microscopy (AFM). Experimental characterization of the single crystal diamond DOEs in transmission at λ=532nm confirms excellent uniformity of the resulting top-hat beam profile as required in copper welding applications.
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26
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Ondič L, Varga M, Fait J, Hruška K, Jurka V, Kromka A, Maňák J, Kapusta P, Nováková J. Photonic crystal cavity-enhanced emission from silicon vacancy centers in polycrystalline diamond achieved without postfabrication fine-tuning. NANOSCALE 2020; 12:13055-13063. [PMID: 32539056 DOI: 10.1039/c9nr10580h] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Diamond optical centers have recently emerged as promising single-photon sources for quantum photonics. Particularly, negatively charged silicon vacancy (SiV-) centers show great promise due to their narrow zero-phonon emission line present also at room temperature. However, due to fabrication tolerances it is challenging to prepare directly photonic structures with optical modes spectrally matching the emission of SiV- centers. To reach the spectral overlap, photonic structures must typically undergo complicated post-processing treatment. In this work, suspended photonic crystal cavities made of polycrystalline diamond are engineered and more than 2.5-fold enhancement of the SiV- center zero-phonon line intensity via coupling to the cavity photonic mode is demonstrated. The intrinsic non-homogeneous thickness of the diamond thin layer within the sample is taken as an advantage that enables reaching the spectral overlap between the emission from SiV- centers and the cavity modes without any post-processing. Even with lower optical quality compared to monocrystalline diamond, the fabricated photonic structures show comparable efficiency for intensity enhancement. Therefore, the results of this work may open up a promising route for the application of polycrystalline diamond in photonics.
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Affiliation(s)
- Lukáš Ondič
- Institute of Physics, Czech Academy of Sciences, v.v.i., Cukrovarnická 10, CZ-162 00, Prague 6, Czech Republic.
| | - Marian Varga
- Institute of Physics, Czech Academy of Sciences, v.v.i., Cukrovarnická 10, CZ-162 00, Prague 6, Czech Republic.
| | - Jan Fait
- Institute of Physics, Czech Academy of Sciences, v.v.i., Cukrovarnická 10, CZ-162 00, Prague 6, Czech Republic. and Faculty of Electrical Engineering, Czech Technical University in Prague, Technická 27, 16627 Prague, Czech Republic
| | - Karel Hruška
- Institute of Physics, Czech Academy of Sciences, v.v.i., Cukrovarnická 10, CZ-162 00, Prague 6, Czech Republic.
| | - Vlastimil Jurka
- Institute of Physics, Czech Academy of Sciences, v.v.i., Cukrovarnická 10, CZ-162 00, Prague 6, Czech Republic.
| | - Alexander Kromka
- Institute of Physics, Czech Academy of Sciences, v.v.i., Cukrovarnická 10, CZ-162 00, Prague 6, Czech Republic.
| | - Jan Maňák
- Institute of Physics, Czech Academy of Sciences, v.v.i., Cukrovarnická 10, CZ-162 00, Prague 6, Czech Republic.
| | - Peter Kapusta
- J. Heyrovský Institute of Physical Chemistry, Czech Academy of Sciences, v.v.i., Dolejškova 3, CZ-182 23, Prague 8, Czech Republic
| | - Jaroslava Nováková
- Charles University in Prague, Faculty of Mathematics and Physics, Department of Surface and Plasma Science, V Holešovičkách 742/2, 180 00 Prague 8, Czech Republic
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27
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Alagappan G, Png CE. Prediction of electromagnetic field patterns of optical waveguide using neural network. Neural Comput Appl 2020. [DOI: 10.1007/s00521-020-05061-9] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/24/2022]
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28
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Fröch JE, Kim S, Mendelson N, Kianinia M, Toth M, Aharonovich I. Coupling Hexagonal Boron Nitride Quantum Emitters to Photonic Crystal Cavities. ACS NANO 2020; 14:7085-7091. [PMID: 32401482 DOI: 10.1021/acsnano.0c01818] [Citation(s) in RCA: 28] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Quantum photonics technologies require a scalable approach for the integration of nonclassical light sources with photonic resonators to achieve strong light confinement and enhancement of quantum light emission. Point defects from hexagonal boron nitride (hBN) are among the front runners for single photon sources due to their ultra-bright emission; however, the coupling of hBN defects to photonic crystal cavities has so far remained elusive. Here we demonstrate on-chip integration of hBN quantum emitters with photonic crystal cavities from silicon nitride (Si3N4) and achieve an experimentally measured quality factor (Q-factor) of 3300 for hBN/Si3N4 hybrid cavities. We observed 6-fold photoluminescence enhancement of an hBN single photon emission at room temperature. Our work will be useful for further development of cavity quantum electrodynamic experiments and on-chip integration of two-dimensional (2D) materials.
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Affiliation(s)
- Johannes E Fröch
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Sejeong Kim
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Noah Mendelson
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Mehran Kianinia
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Milos Toth
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
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Rugar AE, Lu H, Dory C, Sun S, McQuade PJ, Shen ZX, Melosh NA, Vučković J. Generation of Tin-Vacancy Centers in Diamond via Shallow Ion Implantation and Subsequent Diamond Overgrowth. NANO LETTERS 2020; 20:1614-1619. [PMID: 32031821 DOI: 10.1021/acs.nanolett.9b04495] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Group IV color centers in diamond have garnered great interest for their potential as optically active solid-state spin qubits. The future utilization of such emitters requires the development of precise site-controlled emitter generation techniques that are compatible with high-quality nanophotonic devices. This task is more challenging for color centers with large group IV impurity atoms, which are otherwise promising because of their predicted long spin coherence times without a dilution refrigerator. For example, when applied to the negatively charged tin-vacancy (SnV-) center, conventional site-controlled color center generation methods either damage the diamond surface or yield bulk spectra with unexplained features. Here we demonstrate a novel method to generate site-controlled SnV- centers with clean bulk spectra. We shallowly implant Sn ions through a thin implantation mask and subsequently grow a layer of diamond via chemical vapor deposition. This method can be extended to other color centers and integrated with quantum nanophotonic device fabrication.
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Affiliation(s)
| | | | | | | | - Patrick J McQuade
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Zhi-Xun Shen
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Nicholas A Melosh
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
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Elshaari AW, Pernice W, Srinivasan K, Benson O, Zwiller V. Hybrid integrated quantum photonic circuits. NATURE PHOTONICS 2020; 14:10.1038/s41566-020-0609-x. [PMID: 34815738 PMCID: PMC8607459 DOI: 10.1038/s41566-020-0609-x] [Citation(s) in RCA: 141] [Impact Index Per Article: 35.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/05/2019] [Accepted: 02/24/2020] [Indexed: 05/06/2023]
Abstract
Recent developments in chip-based photonic quantum circuits has radically impacted quantum information processing. However, it is challenging for monolithic photonic platforms to meet the stringent demands of most quantum applications. Hybrid platforms combining different photonic technologies in a single functional unit have great potential to overcome the limitations of monolithic photonic circuits. Our review summarizes the progress of hybrid quantum photonics integration, discusses important design considerations including optical connectivity and operation conditions, then highlights several successful realizations of key physical resources for building a quantum-teleporter. We conclude by discussing the roadmap for realizing future advanced large-scale hybrid devices, beyond the solid state platform, which hold great potential for quantum information applications.
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Affiliation(s)
- Ali W Elshaari
- Department of Applied Physics, KTH Royal Institute of Technology, SE-100 44 Stockholm, Sweden
| | - Wolfram Pernice
- Institute of Physics, University of Muenster, Heisenbergstr, 11, 48149 Muenster, Germany
| | - Kartik Srinivasan
- Microsystems and Nanotechnology Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
- Joint Quantum Institute, NIST/University of Maryland, College Park, MD 20742, USA
| | - Oliver Benson
- Humboldt Universität zu Berlin & IRIS Adlershof, Nanooptics, Newtonstraße 15, 12489, Berlin, Germany
| | - Val Zwiller
- Department of Applied Physics, KTH Royal Institute of Technology, SE-100 44 Stockholm, Sweden
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