1
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Wu SD, Weller H, Vossmeyer T, Hsu SH. Motion Sensing by a Highly Sensitive Nanogold Strain Sensor in a Biomimetic 3D Environment. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 39253872 DOI: 10.1021/acsami.4c08105] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/11/2024]
Abstract
Recent advancements in flexible electronics have highlighted their potential in biomedical applications, primarily due to their human-friendly nature. This study introduces a new flexible electronic system designed for motion sensing in a biomimetic three-dimensional (3D) environment. The system features a self-healing gel matrix (chitosan-based hydrogel) that effectively mimics the dynamics of the extracellular matrix (ECM), and is integrated with a highly sensitive thin-film resistive strain sensor, which is fabricated by incorporating a cross-linked gold nanoparticle (GNP) thin film as the active conductive layer onto a biocompatible microphase-separated polyurethane (PU) substrate through a clean, rapid, and high-precision contact printing method. The GNP-PU strain sensor demonstrates high sensitivity (a gauge factor of ∼50), good stability, and waterproofing properties. The feasibility of detecting small motion was evaluated by sensing the beating of human induced pluripotent stem cell (hiPSC)-derived cardiomyocyte spheroids embedded in the gel matrix. The integration of these components exemplifies a proof-of-concept for using flexible electronics comprising self-healing hydrogel and thin-film nanogold in cardiac sensing and offers promising insights into the development of next-generation biomimetic flexible electronic devices.
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Affiliation(s)
- Shin-Da Wu
- Institute of Polymer Science and Engineering, National Taiwan University, No. 1, Sec. 4 Roosevelt Road, Taipei 106319, Taiwan
- Institute of Physical Chemistry, University of Hamburg, Grindelallee 117, Hamburg 20146, Germany
| | - Horst Weller
- Institute of Physical Chemistry, University of Hamburg, Grindelallee 117, Hamburg 20146, Germany
- Fraunhofer Center for Applied Nanotechnology CAN, Grindelallee 117, Hamburg 20146, Germany
| | - Tobias Vossmeyer
- Institute of Physical Chemistry, University of Hamburg, Grindelallee 117, Hamburg 20146, Germany
| | - Shan-Hui Hsu
- Institute of Polymer Science and Engineering, National Taiwan University, No. 1, Sec. 4 Roosevelt Road, Taipei 106319, Taiwan
- Institute of Cellular and System Medicine, National Health Research Institutes, Miaoli 350401, Taiwan
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2
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Deepak, Saini D, Naskar S, Mandal D, Roy RK. Room Temperature Single-Component Organic Multiferroics with Large Magnetoelectric Coupling: Proficient Approach for Stray-Magnetic Field Harvesting. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2405248. [PMID: 39240077 DOI: 10.1002/smll.202405248] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/27/2024] [Revised: 08/17/2024] [Indexed: 09/07/2024]
Abstract
Magnetoelectric materials are highly desirable for technological applications due to their ability to produce electricity under a magnetic field. Among the various types of magnetoelectric materials studied, their organic counterparts provide an opportunity to develop solution-processable, flexible, lightweight, and wearable electronic devices. However, there is a rare choice of solution-processable, flexible, lightweight magnetoelectric materials which has tremendous technological interest. A supramolecular scaffold with precisely positioned structure-forming and functional units (electrical dipoles and magnetic spins) is designed so that self-assembly results in functional unit organization. Structure-forming segments allow these scaffolds to self-assemble into hierarchically ordered structures in nonpolar solvents, creating nanofibrous organogel networks. In particular, the xerogel derived from this organogel exhibits the highest magnetoelectric coupling coefficient (αME ≈ 216 mV Oe-1 cm-1) reported to date for organic materials. This is even greater than commonly envisioned composite materials made of piezoelectric polymers and inorganic magnets. This single-component organic multiferroic material displays ferroelectricity (Tc ≈ 46 °C) and paramagnetic behavior at room temperature. With this, it is demonstrated that the possibilities of effectively harvesting stray magnetic fields that are copiously available in the surroundings and wasted otherwise.
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Affiliation(s)
- Deepak
- Department of Chemical Sciences, Indian Institute of Science Education and Research Mohali, Knowledge City, Sector 81, SAS Nagar, Punjab, India
| | - Dalip Saini
- Quantum Materials and Devices Unit, Institute of Nanoscience and Technology, Knowledge City, Sector 81, SAS Nagar, Mohali, 140306, India
| | - Sudip Naskar
- Quantum Materials and Devices Unit, Institute of Nanoscience and Technology, Knowledge City, Sector 81, SAS Nagar, Mohali, 140306, India
| | - Dipankar Mandal
- Quantum Materials and Devices Unit, Institute of Nanoscience and Technology, Knowledge City, Sector 81, SAS Nagar, Mohali, 140306, India
| | - Raj Kumar Roy
- Department of Chemical Sciences, Indian Institute of Science Education and Research Mohali, Knowledge City, Sector 81, SAS Nagar, Punjab, India
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3
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Gao M, Lu X, Yang Y, Qin W. Photon-Dipole-Spin Interactions in M(TCNE) x/P(VDF-TrFE) Multiferroic Heterostructure Available for Bimodal Control of Multistate Data-Storage. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2405024. [PMID: 38736201 DOI: 10.1002/adma.202405024] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/08/2024] [Revised: 05/09/2024] [Indexed: 05/14/2024]
Abstract
Organic multiferroic heterostructure is one of the most promising structures for the future design of high-density flexible energy-efficient data storage. Here, organic ferromagnetic metal(tetracyanoethylene) (M(TCNE))x/ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) (P(VDF-TrFE)) multiferroic heterostructures are fabricated, where the excited state in M(TCNE)x interacted with localized dipole in P(VDF-TrFE) provides a key link for the interfacial coupling. Thus, aligned dipoles in P(VDF-TrFE) by external electric field can affect the magnetization of Fe(TCNE)x effectively to result in a pronounced magnetization-voltage (M-V) hysteresis loop. Moreover, light-induced electron-hole pairs in Fe(TCNE)x with long lifetime effectively interact with the dipoles in P(VDF-TrFE) to lead to an effect in external light control of electric polarization of P(VDF-TrFE). Overall, the organic multiferroic heterostructure provides the possibility of realizing two storage modes, light control of dipole as well as electric field control of spin, which can broaden multifunctional applications of organic multiferroic materials in the area of multistate storage.
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Affiliation(s)
- Mingsheng Gao
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Xiangqian Lu
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Yuying Yang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Wei Qin
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China
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4
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Ganguly S, Pesquera D, Garcia DM, Saeed U, Mirzamohammadi N, Santiso J, Padilla J, Roque JMC, Laulhé C, Berenguer F, Villanueva LG, Catalan G. Photostrictive Actuators Based on Freestanding Ferroelectric Membranes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2310198. [PMID: 38546029 DOI: 10.1002/adma.202310198] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/02/2023] [Revised: 03/12/2024] [Indexed: 04/26/2024]
Abstract
Complex oxides offer a wide range of functional properties, and recent advances in the fabrication of freestanding membranes of these oxides are adding new mechanical degrees of freedom to this already rich functional ecosystem. Here, photoactuation is demonstrated in freestanding thin film resonators of ferroelectric Barium Titanate (BaTiO3) and paraelectric Strontium Titanate (SrTiO3). The free-standing films, transferred onto perforated supports, act as nano-drums, oscillating at their natural resonance frequency when illuminated by a frequency-modulated laser. The light-induced deflections in the ferroelectric BaTiO3 membranes are two orders of magnitude larger than in the paraelectric SrTiO3 ones. Time-resolved X-ray micro-diffraction under illumination and temperature-dependent holographic interferometry provide combined evidence for the photostrictive strain in BaTiO3 originating from a partial screening of ferroelectric polarization by photo-excited carriers, which decreases the tetragonality of the unit cell. These findings showcase the potential of photostrictive freestanding ferroelectric films as wireless actuators operated by light.
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Affiliation(s)
- Saptam Ganguly
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, Barcelona, 08193, Catalonia, Spain
| | - David Pesquera
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, Barcelona, 08193, Catalonia, Spain
| | - Daniel Moreno Garcia
- Advanced NEMS Laboratory, Institute of Mechanical Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, 1015, Switzerland
| | - Umair Saeed
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, Barcelona, 08193, Catalonia, Spain
| | - Nona Mirzamohammadi
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, Barcelona, 08193, Catalonia, Spain
| | - José Santiso
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, Barcelona, 08193, Catalonia, Spain
| | - Jessica Padilla
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, Barcelona, 08193, Catalonia, Spain
| | - José Manuel Caicedo Roque
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, Barcelona, 08193, Catalonia, Spain
| | - Claire Laulhé
- Université Paris-Saclay, Synchrotron SOLEIL, Saint-Aubin, 91190, France
| | - Felisa Berenguer
- Synchrotron SOLEIL, L'Orme des Merisiers, Saint-Aubin BP 48, Gif-sur-Yvette, 91190, France
| | - Luis Guillermo Villanueva
- Advanced NEMS Laboratory, Institute of Mechanical Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, 1015, Switzerland
| | - Gustau Catalan
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, Barcelona, 08193, Catalonia, Spain
- ICREA - Institució Catalana de Recerca i Estudis Avançats, Barcelona, 08010, Catalonia
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5
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Zhang S, Deliyore-Ramírez J, Deng S, Nair B, Pesquera D, Jing Q, Vickers ME, Crossley S, Ghidini M, Guzmán-Verri GG, Moya X, Mathur ND. Highly reversible extrinsic electrocaloric effects over a wide temperature range in epitaxially strained SrTiO 3 films. NATURE MATERIALS 2024; 23:639-647. [PMID: 38514844 PMCID: PMC11068575 DOI: 10.1038/s41563-024-01831-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/07/2023] [Accepted: 02/06/2024] [Indexed: 03/23/2024]
Abstract
Electrocaloric effects have been experimentally studied in ferroelectrics and incipient ferroelectrics, but not incipient ferroelectrics driven ferroelectric using strain. Here we use optimally oriented interdigitated surface electrodes to investigate extrinsic electrocaloric effects in low-loss epitaxial SrTiO3 films near the broad second-order 243 K ferroelectric phase transition created by biaxial in-plane coherent tensile strain from DyScO3 substrates. Our extrinsic electrocaloric effects are an order of magnitude larger than the corresponding effects in bulk SrTiO3 over a wide range of temperatures including room temperature, and unlike electrocaloric effects associated with first-order transitions they are highly reversible in unipolar applied fields. Additionally, the canonical Landau description for strained SrTiO3 films works well if we set the low-temperature zero-field polarization along one of the in-plane pseudocubic <100> directions. In future, similar strain engineering could be exploited for other films, multilayers and bulk samples to increase the range of electrocaloric materials for energy efficient cooling.
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Affiliation(s)
- S Zhang
- College of Science, National University of Defense Technology, Changsha, China.
- Department of Materials Science, University of Cambridge, Cambridge, UK.
| | - J Deliyore-Ramírez
- Centro de Investigación en Ciencia e Ingeniería de Materiales (CICIMA), Universidad de Costa Rica, San José, Costa Rica
- Escuela de Física, Universidad de Costa Rica, San José, Costa Rica
| | - S Deng
- Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, China
| | - B Nair
- Department of Materials Science, University of Cambridge, Cambridge, UK
| | - D Pesquera
- Department of Materials Science, University of Cambridge, Cambridge, UK
| | - Q Jing
- Department of Materials Science, University of Cambridge, Cambridge, UK
- James Watt School of Engineering, University of Glasgow, Glasgow, UK
| | - M E Vickers
- Department of Materials Science, University of Cambridge, Cambridge, UK
| | - S Crossley
- Department of Materials Science, University of Cambridge, Cambridge, UK
| | - M Ghidini
- Department of Materials Science, University of Cambridge, Cambridge, UK
- DiFeST, University of Parma, Parma, Italy
- Diamond Light Source, Chilton, Didcot, UK
| | - G G Guzmán-Verri
- Department of Materials Science, University of Cambridge, Cambridge, UK.
- Centro de Investigación en Ciencia e Ingeniería de Materiales (CICIMA), Universidad de Costa Rica, San José, Costa Rica.
- Escuela de Física, Universidad de Costa Rica, San José, Costa Rica.
| | - X Moya
- Department of Materials Science, University of Cambridge, Cambridge, UK.
| | - N D Mathur
- Department of Materials Science, University of Cambridge, Cambridge, UK.
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6
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López-Sánchez J, Del Campo A, Quesada A, Rivelles A, Abuín M, Sainz R, Sebastiani-Tofano E, Rubio-Zuazo J, Ochoa DA, Fernández JF, García JE, Rubio-Marcos F. Concomitant Light-Reversible Magnetic Response in Multiferroic Oxide Heterostructures for Multiphysics Applications. ACS APPLIED MATERIALS & INTERFACES 2024; 16:19866-19876. [PMID: 38587105 DOI: 10.1021/acsami.4c02551] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/09/2024]
Abstract
The concept of multiphysics, where materials respond to diverse external stimuli, such as magnetic fields, electric fields, light irradiation, stress, heat, and chemical reactions, plays a fundamental role in the development of innovative devices. Nanomanufacturing, especially in low-dimensional systems, enhances the synergistic interactions taking place on the nanoscale. Light-matter interaction, rather than electric fields, holds great promise for achieving low-power, wireless control over magnetism, solving two major technological problems: the feasibility of electrical contacts at smaller scales and the undesired heating of the devices. Here, we shed light on the remarkable reversible modulation of magnetism using visible light in epitaxial Fe3O4/BaTiO3 heterostructure. This achievement is underpinned by the convergence of two distinct mechanisms. First, the magnetoelastic effect, triggered by ferroelectric domain switching, induces a proportional change in coercivity and remanence upon laser illumination. Second, light-matter interaction induces charged ferroelectric domain walls' electrostatic decompensations, acting intimately on the magnetization of the epitaxial Fe3O4 film by magnetoelectric coupling. Crucially, our experimental results vividly illustrate the capability to manipulate magnetic properties using visible light. This concomitant mechanism provides a promising avenue for low-intensity visible-light manipulation of magnetism, offering potential applications in multiferroic devices.
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Affiliation(s)
- Jesús López-Sánchez
- Department of Electroceramics, Instituto de Cerámica y Vidrio─Consejo Superior de Investigaciones Científicas (ICV─CSIC), 28049 Madrid, Spain
| | - Adolfo Del Campo
- Department of Electroceramics, Instituto de Cerámica y Vidrio─Consejo Superior de Investigaciones Científicas (ICV─CSIC), 28049 Madrid, Spain
| | - Adrián Quesada
- Department of Electroceramics, Instituto de Cerámica y Vidrio─Consejo Superior de Investigaciones Científicas (ICV─CSIC), 28049 Madrid, Spain
| | - Alejandro Rivelles
- Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM), Universidad Politécnica de Madrid (UPM), 28040 Madrid, Spain
| | - Manuel Abuín
- Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM), Universidad Politécnica de Madrid (UPM), 28040 Madrid, Spain
| | - Raquel Sainz
- Instituto de Catálisis y Petroleoquímica─Consejo Superior de Investigaciones Científicas, (ICP─CSIC), 28049 Madrid, Spain
| | - Eugenia Sebastiani-Tofano
- Instituto de Ciencia de Materiales de Madrid─Consejo Superior de Investigaciones Científicas (ICMM─CSIC), 28049 Madrid, Spain
- Spanish CRG BM25─SpLine at the ESRF─The European Synchrotron, 38000 Grenoble, France
| | - Juan Rubio-Zuazo
- Instituto de Ciencia de Materiales de Madrid─Consejo Superior de Investigaciones Científicas (ICMM─CSIC), 28049 Madrid, Spain
- Spanish CRG BM25─SpLine at the ESRF─The European Synchrotron, 38000 Grenoble, France
| | - Diego A Ochoa
- Department of Physics, Universitat Politècnica de Catalunya (UPC), 08034 Barcelona, Spain
| | - José F Fernández
- Department of Electroceramics, Instituto de Cerámica y Vidrio─Consejo Superior de Investigaciones Científicas (ICV─CSIC), 28049 Madrid, Spain
| | - José E García
- Department of Physics, Universitat Politècnica de Catalunya (UPC), 08034 Barcelona, Spain
| | - Fernando Rubio-Marcos
- Department of Electroceramics, Instituto de Cerámica y Vidrio─Consejo Superior de Investigaciones Científicas (ICV─CSIC), 28049 Madrid, Spain
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7
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Sun W, Zhang Y, Cao K, Lu S, Du A, Huang H, Zhang S, Hu C, Feng C, Liang W, Liu Q, Mi S, Cai J, Lu Y, Zhao W, Zhao Y. Electric field control of perpendicular magnetic tunnel junctions with easy-cone magnetic anisotropic free layers. SCIENCE ADVANCES 2024; 10:eadj8379. [PMID: 38579008 PMCID: PMC10997210 DOI: 10.1126/sciadv.adj8379] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/02/2023] [Accepted: 03/05/2024] [Indexed: 04/07/2024]
Abstract
Magnetic tunnel junctions (MTJs) are the core element of spintronic devices. Currently, the mainstream writing operation of MTJs is based on electric current with high energy dissipation, and it can be notably reduced if an electric field is used instead. In this regard, it is promising for electric field control of MTJ in the multiferroic heterostructure composed of MTJ and ferroelectrics via strain-mediated magnetoelectric coupling. However, there are only reports on MTJs with in-plane anisotropy so far. Here, we investigate electric field control of the resistance state of MgO-based perpendicular MTJs with easy-cone anisotropic free layers through strain-mediated magnetoelectric coupling in multiferroic heterostructures. A remarkable, nonvolatile, and reversible modulation of resistance at room temperature is demonstrated. Through local reciprocal space mapping under different electric fields for Pb(Mg1/3Nb2/3)0.7Ti0.3O3 beneath the MTJ pillar, the modulation mechanism is deduced. Our work represents a crucial step toward electric field control of spintronic devices with non-in-plane magnetic anisotropy.
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Affiliation(s)
- Weideng Sun
- Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Tsinghua University, Beijing 100084, China
| | - Yike Zhang
- Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Tsinghua University, Beijing 100084, China
| | - Kaihua Cao
- Fert Beijing Institute, School of Integrated Science and Engineering, Beihang University, Beijing 100191, China
| | - Shiyang Lu
- Fert Beijing Institute, School of Integrated Science and Engineering, Beihang University, Beijing 100191, China
| | - Ao Du
- Fert Beijing Institute, School of Integrated Science and Engineering, Beihang University, Beijing 100191, China
| | - Haoliang Huang
- Anhui Laboratory of Advanced Photon Science and Technology and Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Sen Zhang
- College of Science, National University of Defense Technology, Changsha 410073, China
| | - Chaoqun Hu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Ce Feng
- Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Tsinghua University, Beijing 100084, China
| | - Wenhui Liang
- Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Tsinghua University, Beijing 100084, China
| | - Quan Liu
- Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Tsinghua University, Beijing 100084, China
| | - Shu Mi
- Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Tsinghua University, Beijing 100084, China
| | - Jianwang Cai
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yalin Lu
- Anhui Laboratory of Advanced Photon Science and Technology and Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
| | - Weisheng Zhao
- Fert Beijing Institute, School of Integrated Science and Engineering, Beihang University, Beijing 100191, China
| | - Yonggang Zhao
- Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Tsinghua University, Beijing 100084, China
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8
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Zheng H, Loh KP. Ferroics in Hybrid Organic-Inorganic Perovskites: Fundamentals, Design Strategies, and Implementation. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2308051. [PMID: 37774113 DOI: 10.1002/adma.202308051] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/09/2023] [Revised: 09/13/2023] [Indexed: 10/01/2023]
Abstract
Hybrid organic-inorganic perovskites (HOIPs) afford highly versatile structure design and lattice dimensionalities; thus, they are actively researched as material platforms for the tailoring of ferroic behaviors. Unlike single-phase organic or inorganic materials, the interlayer coupling between organic and inorganic components in HOIPs allows the modification of strain and symmetry by chirality transfer or lattice distortion, thereby enabling the coexistence of ferroic orders. This review focuses on the principles for engineering one or multiple ferroic orders in HOIPs, and the conditions for achieving multiferroicity and magnetoelectric properties. The prospects of multilevel ferroic modulation, chiral spin textures, and spin orbitronics in HOIPs are also presented.
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Affiliation(s)
- Haining Zheng
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou, 350207, China
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore
| | - Kian Ping Loh
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou, 350207, China
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore
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9
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Nian L, Sun H, Wang Z, Xu D, Hao B, Yan S, Li Y, Zhou J, Deng Y, Hao Y, Nie Y. Sr 4Al 2O 7: A New Sacrificial Layer with High Water Dissolution Rate for the Synthesis of Freestanding Oxide Membranes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2307682. [PMID: 38238890 DOI: 10.1002/adma.202307682] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/31/2023] [Revised: 12/18/2023] [Indexed: 02/01/2024]
Abstract
Freestanding perovskite oxide membranes have drawn great attention recently since they offer exceptional structural tunability and stacking ability, providing new opportunities in fundamental research and potential device applications in silicon-based semiconductor technology. Among different types of sacrificial layers, the (Ca, Sr, Ba)3Al2O6 compounds are most widely used since they can be dissolved in water and prepare high-quality perovskite oxide membranes with clean and sharp surfaces and interfaces; However, the typical transfer process takes a long time (up to hours) in obtaining millimeter-size freestanding membranes, let alone realize wafer-scale samples with high yield. Here, a new member of the SrO-Al2O3 family, Sr4Al2O7 is introduced, and its high dissolution rate, ≈10 times higher than that of Sr3Al2O6 is demonstrated. The high-dissolution-rate of Sr4Al2O7 is most likely related to the more discrete Al-O networks and higher concentration of water-soluble Sr-O species in this compound. This work significantly facilitates the preparation of freestanding membranes and sheds light on the integration of multifunctional perovskite oxides in practical electronic devices.
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Affiliation(s)
- Leyan Nian
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
- Suzhou Laboratory, Suzhou, 215125, P. R. China
| | - Haoying Sun
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
| | - Zhichao Wang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
| | - Duo Xu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
| | - Bo Hao
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
| | - Shengjun Yan
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
| | - Yueying Li
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
| | - Jian Zhou
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
| | - Yu Deng
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
| | - Yufeng Hao
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
| | - Yuefeng Nie
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
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10
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Varshney S, Choo S, Thompson L, Yang Z, Shah J, Wen J, Koester SJ, Mkhoyan KA, McLeod AS, Jalan B. Hybrid Molecular Beam Epitaxy for Single-Crystalline Oxide Membranes with Binary Oxide Sacrificial Layers. ACS NANO 2024; 18:6348-6358. [PMID: 38314696 DOI: 10.1021/acsnano.3c11192] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/07/2024]
Abstract
The advancement in thin-film exfoliation for synthesizing oxide membranes has led to possibilities for creating artificially assembled heterostructures with structurally and chemically incompatible materials. The sacrificial layer method is a promising approach to exfoliate as-grown films from a compatible material system, allowing for their integration with dissimilar materials. Nonetheless, the conventional sacrificial layers often possess an intricate stoichiometry, thereby constraining their practicality and adaptability, particularly when considering techniques such as molecular beam epitaxy (MBE). This is where easy-to-grow binary alkaline-earth-metal oxides with a rock salt crystal structure are useful. These oxides, which include (Mg, Ca, Sr, Ba)O, can be used as a sacrificial layer covering a much broader range of lattice parameters compared to conventional sacrificial layers and are easily dissolvable in deionized water. In this study, we show the epitaxial growth of the single-crystalline perovskite SrTiO3 (STO) on sacrificial layers consisting of crystalline SrO, BaO, and Ba1-xCaxO films, employing a hybrid MBE method. Our results highlight the rapid (≤5 min) dissolution of the sacrificial layer when immersed in deionized water, facilitating the fabrication of millimeter-sized STO membranes. Using high-resolution X-ray diffraction, atomic-force microscopy, scanning transmission electron microscopy, impedance spectroscopy, and scattering-type near-field optical microscopy (SNOM), we demonstrate single-crystalline STO membranes with bulk-like intrinsic dielectric properties. The employment of alkaline earth metal oxides as sacrificial layers is likely to simplify membrane synthesis, particularly with MBE, thus expanding the research and application possibilities.
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Affiliation(s)
- Shivasheesh Varshney
- Department of Chemical Engineering and Materials Science, University of Minnesota, Twin Cities, Minnesota 55455, United States
| | - Sooho Choo
- Department of Chemical Engineering and Materials Science, University of Minnesota, Twin Cities, Minnesota 55455, United States
| | - Liam Thompson
- School of Physics and Astronomy, University of Minnesota, Twin Cities, Minnesota 55455, United States
| | - Zhifei Yang
- Department of Chemical Engineering and Materials Science, University of Minnesota, Twin Cities, Minnesota 55455, United States
- School of Physics and Astronomy, University of Minnesota, Twin Cities, Minnesota 55455, United States
| | - Jay Shah
- Department of Chemical Engineering and Materials Science, University of Minnesota, Twin Cities, Minnesota 55455, United States
| | - Jiaxuan Wen
- Department of Electrical and Computer Engineering, University of Minnesota, Twin Cities, Minnesota 55455, United States
| | - Steven J Koester
- Department of Electrical and Computer Engineering, University of Minnesota, Twin Cities, Minnesota 55455, United States
| | - K Andre Mkhoyan
- Department of Chemical Engineering and Materials Science, University of Minnesota, Twin Cities, Minnesota 55455, United States
| | - Alexander S McLeod
- School of Physics and Astronomy, University of Minnesota, Twin Cities, Minnesota 55455, United States
| | - Bharat Jalan
- Department of Chemical Engineering and Materials Science, University of Minnesota, Twin Cities, Minnesota 55455, United States
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11
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Salles P, Machado P, Yu P, Coll M. Chemical synthesis of complex oxide thin films and freestanding membranes. Chem Commun (Camb) 2023; 59:13820-13830. [PMID: 37921594 DOI: 10.1039/d3cc03030j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/04/2023]
Abstract
Oxides offer unique physical and chemical properties that inspire rapid advances in materials chemistry to design and nanoengineer materials compositions and implement them in devices for a myriad of applications. Chemical deposition methods are gaining attention as a versatile approach to develop complex oxide thin films and nanostructures by properly selecting compatible chemical precursors and designing an accurate cost-effective thermal treatment. Here, upon describing the basics of chemical solution deposition (CSD) and atomic layer deposition (ALD), some examples of the growth of chemically-deposited functional complex oxide films that can have applications in energy and electronics are discussed. To go one step further, the suitability of these techniques is presented to prepare freestanding complex oxides which can notably broaden their applications. Finally, perspectives on the use of chemical methods to prepare future materials are given.
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Affiliation(s)
- Pol Salles
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC) Campus UAB, 08193 Bellaterra (Barcelona), Spain.
| | - Pamela Machado
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC) Campus UAB, 08193 Bellaterra (Barcelona), Spain.
| | - Pengmei Yu
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC) Campus UAB, 08193 Bellaterra (Barcelona), Spain.
| | - Mariona Coll
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC) Campus UAB, 08193 Bellaterra (Barcelona), Spain.
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12
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Yang G, Dong G, Zhang B, Xu X, Zhao Y, Hu Z, Liu M. Twisted Integration of Complex Oxide Magnetoelectric Heterostructures via Water-Etching and Transfer Process. NANO-MICRO LETTERS 2023; 16:19. [PMID: 37975933 PMCID: PMC10656404 DOI: 10.1007/s40820-023-01233-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/26/2023] [Accepted: 10/09/2023] [Indexed: 11/19/2023]
Abstract
HIGHLIGHTS The (001)-oriented ferromagnetic La0.67Sr0.33MnO3 films are stuck onto the (011)-oriented ferroelectric single-crystal 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 substrate with 0° and 45° twist angle. By applying a 7.2 kV cm-1 electric field, the coexistence of uniaxial and fourfold in-plane magnetic anisotropy is observed in 45° Sample, while a typical uniaxial anisotropy is found in 0° Sample. Manipulating strain mode and degree that can be applied to epitaxial complex oxide thin films have been a cornerstone of strain engineering. In recent years, lift-off and transfer technology of the epitaxial oxide thin films have been developed that enabled the integration of heterostructures without the limitation of material types and crystal orientations. Moreover, twisted integration would provide a more interesting strategy in artificial magnetoelectric heterostructures. A specific twist angle between the ferroelectric and ferromagnetic oxide layers corresponds to the distinct strain regulation modes in the magnetoelectric coupling process, which could provide some insight in to the physical phenomena. In this work, the La0.67Sr0.33MnO3 (001)/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (011) (LSMO/PMN-PT) heterostructures with 45º and 0º twist angles were assembled via water-etching and transfer process. The transferred LSMO films exhibit a fourfold magnetic anisotropy with easy axis along LSMO < 110 >. A coexistence of uniaxial and fourfold magnetic anisotropy with LSMO [110] easy axis is observed for the 45° Sample by applying a 7.2 kV cm-1 electrical field, significantly different from a uniaxial anisotropy with LSMO [100] easy axis for the 0° Sample. The fitting of the ferromagnetic resonance field reveals that the strain coupling generated by the 45° twist angle causes different lattice distortion of LSMO, thereby enhancing both the fourfold and uniaxial anisotropy. This work confirms the twisting degrees of freedom for magnetoelectric coupling and opens opportunities for fabricating artificial magnetoelectric heterostructures.
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Affiliation(s)
- Guannan Yang
- State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Engineering Research Center of Spin Quantum Sensor Chips, Universities of Shaanxi Province, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China
| | - Guohua Dong
- State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Engineering Research Center of Spin Quantum Sensor Chips, Universities of Shaanxi Province, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China.
| | - Butong Zhang
- State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Engineering Research Center of Spin Quantum Sensor Chips, Universities of Shaanxi Province, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China
| | - Xu Xu
- State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Engineering Research Center of Spin Quantum Sensor Chips, Universities of Shaanxi Province, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China
| | - Yanan Zhao
- State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Engineering Research Center of Spin Quantum Sensor Chips, Universities of Shaanxi Province, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China
| | - Zhongqiang Hu
- State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Engineering Research Center of Spin Quantum Sensor Chips, Universities of Shaanxi Province, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China.
| | - Ming Liu
- State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Engineering Research Center of Spin Quantum Sensor Chips, Universities of Shaanxi Province, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China
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13
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Wu SD, Hsu SH, Ketelsen B, Bittinger SC, Schlicke H, Weller H, Vossmeyer T. Fabrication of Eco-Friendly Wearable Strain Sensor Arrays via Facile Contact Printing for Healthcare Applications. SMALL METHODS 2023; 7:e2300170. [PMID: 37154264 DOI: 10.1002/smtd.202300170] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/13/2023] [Revised: 03/28/2023] [Indexed: 05/10/2023]
Abstract
Wearable flexible strain sensors with spatial resolution enable the acquisition and analysis of complex actions for noninvasive personalized healthcare applications. To provide secure contact with skin and to avoid environmental pollution after usage, sensors with biocompatibility and biodegradability are highly desirable. Herein, wearable flexible strain sensors composed of crosslinked gold nanoparticle (GNP) thin films as the active conductive layer and transparent biodegradable polyurethane (PU) films as the flexible substrate are developed. The patterned GNP films (micrometer- to millimeter-scale square and rectangle geometry, alphabetic characters, and wave and array patterns) are transferred onto the biodegradable PU film via a facile, clean, rapid and high-precision contact printing method, without the need of a sacrificial polymer carrier or organic solvents. The GNP-PU strain sensor with low Young's modulus (≈17.8 MPa) and high stretchability showed good stability and durability (10 000 cycles) as well as degradability (42% weight loss after 17 days at 74 °C in water). The GNP-PU strain sensor arrays with spatiotemporal strain resolution are applied as wearable eco-friendly electronics for monitoring subtle physiological signals (e.g., mapping of arterial lines and sensing pulse waveforms) and large-strain actions (e.g., finger bending).
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Affiliation(s)
- Shin-Da Wu
- Institute of Polymer Science and Engineering, National Taiwan University, Taipei, 10617, Taiwan
- Institute of Physical Chemistry, University of Hamburg, 20146, Hamburg, Germany
| | - Shan-Hui Hsu
- Institute of Polymer Science and Engineering, National Taiwan University, Taipei, 10617, Taiwan
- Institute of Cellular and System Medicine, National Health Research Institutes, Miaoli, 35053, Taiwan
| | - Bendix Ketelsen
- Institute of Physical Chemistry, University of Hamburg, 20146, Hamburg, Germany
| | - Sophia C Bittinger
- Institute of Physical Chemistry, University of Hamburg, 20146, Hamburg, Germany
| | - Hendrik Schlicke
- Fraunhofer Center for Applied Nanotechnology CAN, 20146, Hamburg, Germany
| | - Horst Weller
- Institute of Physical Chemistry, University of Hamburg, 20146, Hamburg, Germany
- Fraunhofer Center for Applied Nanotechnology CAN, 20146, Hamburg, Germany
| | - Tobias Vossmeyer
- Institute of Physical Chemistry, University of Hamburg, 20146, Hamburg, Germany
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14
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MacManus-Driscoll JL, Wu R, Li W. Interface-related phenomena in epitaxial complex oxide ferroics across different thin film platforms: opportunities and challenges. MATERIALS HORIZONS 2023; 10:1060-1086. [PMID: 36815609 PMCID: PMC10068909 DOI: 10.1039/d2mh01527g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/15/2022] [Accepted: 02/16/2023] [Indexed: 06/18/2023]
Abstract
Interfaces in complex oxides give rise to fascinating new physical phenomena arising from the interconnected spin, lattice, charge and orbital degrees of freedom. Most commonly, interfaces are engineered in epitaxial superlattice films. Of growing interest also are epitaxial vertically aligned nanocomposite films where interfaces form by self-assembly. These two thin film forms offer different capabilities for materials tuning and have been explored largely separately from one another. Ferroics (ferroelectric, ferromagnetic, multiferroic) are among the most fascinating phenomena to be manipulated using interface effects. Hence, in this review we compare and contrast the ferroic properties that arise in these two different film forms, highlighting exemplary materials combinations which demonstrate novel, enhanced and/or emergent ferroic functionalities. We discuss the origins of the observed functionalities and propose where knowledge can be translated from one materials form to another, to potentially produce new functionalities. Finally, for the two different film forms we present a perspective on underexplored/emerging research directions.
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Affiliation(s)
| | - Rui Wu
- Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, CB3 0FS, UK.
- Spin-X Institute, School of Physics and Optoelectronics, State Key Laboratory of Luminescent Materials and Devices, Guangdong-Hong Kong-Macao Joint Laboratory of Optoelectronic and Magnetic Functional Materials, South China University of Technology, Guangzhou 511442, China
| | - Weiwei Li
- Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, CB3 0FS, UK.
- MIIT Key Laboratory of Aerospace Information Materials and Physics, State Key Laboratory of Mechanics and Control of Mechanical Structures, College of Physics, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, China
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15
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Peng B, Lu Q, Tang H, Zhang Y, Cheng Y, Qiu R, Guo Y, Zhou Z, Liu M. Large in-plane piezo-strain enhanced voltage control of magnetic anisotropy in Si-compatible multiferroic thin films. MATERIALS HORIZONS 2022; 9:3013-3021. [PMID: 36196984 DOI: 10.1039/d2mh01020h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Voltage control of magnetic anisotropy (VCMA) in Si-compatible ferroelectric/ferromagnetic multiferroic thin films is promising to enable power-efficient and integrated magnetic memories. However, their VCMA effect is weak and is always smaller than that of the bulk counterparts. Here, we achieve a more substantial VCMA effect in thin films than in the bulk, benefiting from the large in-plane piezo-strain mediated magnetoelectric coupling under strong fields. Si-compatible ferroelectric Pb(Zr,Ti)O3 (PZT) thin films with large breakdown strength of up to 3.2 MV cm-1 are fabricated to further construct multiferroic thin films. Since conventional methods fail to measure the VCMA effect under strong fields, we establish a micro-ferromagnetic resonance method based on micro-fabrication. An enhanced VCMA effect is demonstrated in PZT/CoFeB thin films, whose voltage-induced effective magnetic field (Heff) could experimentally reach 26.1 Oe, which is much stronger than that in bulk control samples "PZT ceramic/CoFeB" (2.6 Oe) and "PMN-PT single crystal/CoFeB" (18.5 Oe) as well as previous reports. Theoretically, the Heff in thin films could be > 60 Oe near the breakdown strength, resulting from a giant in-plane piezo-strain S31 < -0.3%, which is comparable to that of the best ferroelectric single crystals. Si-compatible multiferroic thin films with enhanced VCMA will be a useful platform for developing integrated magnetic and spintronic devices.
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Affiliation(s)
- Bin Peng
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronics and Information Engineering, State Key Laboratory for Mechanical Behavior of Materials, International Joint Laboratory for Micro/Nano Manufacture and Measurement Technology, Xi'an Jiaotong University, Xi'an 710049, P. R. China.
| | - Qi Lu
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronics and Information Engineering, State Key Laboratory for Mechanical Behavior of Materials, International Joint Laboratory for Micro/Nano Manufacture and Measurement Technology, Xi'an Jiaotong University, Xi'an 710049, P. R. China.
| | - Haowen Tang
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronics and Information Engineering, State Key Laboratory for Mechanical Behavior of Materials, International Joint Laboratory for Micro/Nano Manufacture and Measurement Technology, Xi'an Jiaotong University, Xi'an 710049, P. R. China.
| | - Yao Zhang
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronics and Information Engineering, State Key Laboratory for Mechanical Behavior of Materials, International Joint Laboratory for Micro/Nano Manufacture and Measurement Technology, Xi'an Jiaotong University, Xi'an 710049, P. R. China.
| | - Yuxin Cheng
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronics and Information Engineering, State Key Laboratory for Mechanical Behavior of Materials, International Joint Laboratory for Micro/Nano Manufacture and Measurement Technology, Xi'an Jiaotong University, Xi'an 710049, P. R. China.
| | - Ruibin Qiu
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronics and Information Engineering, State Key Laboratory for Mechanical Behavior of Materials, International Joint Laboratory for Micro/Nano Manufacture and Measurement Technology, Xi'an Jiaotong University, Xi'an 710049, P. R. China.
| | - Yunting Guo
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronics and Information Engineering, State Key Laboratory for Mechanical Behavior of Materials, International Joint Laboratory for Micro/Nano Manufacture and Measurement Technology, Xi'an Jiaotong University, Xi'an 710049, P. R. China.
| | - Ziyao Zhou
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronics and Information Engineering, State Key Laboratory for Mechanical Behavior of Materials, International Joint Laboratory for Micro/Nano Manufacture and Measurement Technology, Xi'an Jiaotong University, Xi'an 710049, P. R. China.
| | - Ming Liu
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronics and Information Engineering, State Key Laboratory for Mechanical Behavior of Materials, International Joint Laboratory for Micro/Nano Manufacture and Measurement Technology, Xi'an Jiaotong University, Xi'an 710049, P. R. China.
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16
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Hu YQ, Liu NT, Lao J, Liang RH, Deng X, Guan Z, Chen BB, Peng H, Zhong N, Xiang PH, Duan CG. Ultrahigh Ferroelectric and Piezoelectric Properties in BiFeO 3-BaTiO 3 Epitaxial Films Near Morphotropic Phase Boundary. ACS APPLIED MATERIALS & INTERFACES 2022; 14:36825-36833. [PMID: 35929806 DOI: 10.1021/acsami.2c09062] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Ferroelectric solid solutions with composition near the morphotropic phase boundary (MPB) have gained extensive attention recently due to their excellent ferroelectric and piezoelectric properties. Here, we have demonstrated a strategy to realize the controllable preparation of BiFeO3-BaTiO3 (BF-BT) epitaxial films near the MPB. A series of high-quality BF-BT films were fabricated by pulsed laser deposition via adjusting oxygen partial pressure (PO2) using a BF-BT ceramic target. A continuous transition from rhombohedral to tetragonal phase was observed upon increasing PO2. Particularly, the film with a pure tetragonal phase exhibited a large remnant polarization of ∼90.6 μC/cm2, while excellent piezoelectric performance with an ultrahigh strain (∼0.48%) was obtained in the film with coexisting rhombohedral and tetragonal phases. The excellent ferroelectric and piezoelectric properties endow the BF-BT system near the MPB with great application prospects in lead-free electronic devices.
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Affiliation(s)
- Yu-Qing Hu
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai 200241, China
| | - Ning-Tao Liu
- Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Jie Lao
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai 200241, China
| | - Rui-Hong Liang
- Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China
| | - Xing Deng
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai 200241, China
| | - Zhao Guan
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai 200241, China
| | - Bin-Bin Chen
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai 200241, China
| | - Hui Peng
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China
| | - Ni Zhong
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China
| | - Ping-Hua Xiang
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China
| | - Chun-Gang Duan
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China
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17
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Pesquera D, Fernández A, Khestanova E, Martin LW. Freestanding complex-oxide membranes. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:383001. [PMID: 35779514 DOI: 10.1088/1361-648x/ac7dd5] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/22/2022] [Accepted: 07/01/2022] [Indexed: 06/15/2023]
Abstract
Complex oxides show a vast range of functional responses, unparalleled within the inorganic solids realm, making them promising materials for applications as varied as next-generation field-effect transistors, spintronic devices, electro-optic modulators, pyroelectric detectors, or oxygen reduction catalysts. Their stability in ambient conditions, chemical versatility, and large susceptibility to minute structural and electronic modifications make them ideal subjects of study to discover emergent phenomena and to generate novel functionalities for next-generation devices. Recent advances in the synthesis of single-crystal, freestanding complex oxide membranes provide an unprecedented opportunity to study these materials in a nearly-ideal system (e.g. free of mechanical/thermal interaction with substrates) as well as expanding the range of tools for tweaking their order parameters (i.e. (anti-)ferromagnetic, (anti-)ferroelectric, ferroelastic), and increasing the possibility of achieving novel heterointegration approaches (including interfacing dissimilar materials) by avoiding the chemical, structural, or thermal constraints in synthesis processes. Here, we review the recent developments in the fabrication and characterization of complex-oxide membranes and discuss their potential for unraveling novel physicochemical phenomena at the nanoscale and for further exploiting their functionalities in technologically relevant devices.
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Affiliation(s)
- David Pesquera
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST Campus UAB, Bellaterra, Barcelona 08193, Spain
| | - Abel Fernández
- Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, United States of America
| | | | - Lane W Martin
- Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, United States of America
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, United States of America
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18
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Choi E, Sim KI, Burch KS, Lee YH. Emergent Multifunctional Magnetic Proximity in van der Waals Layered Heterostructures. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2200186. [PMID: 35596612 PMCID: PMC9313546 DOI: 10.1002/advs.202200186] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/11/2022] [Revised: 04/01/2022] [Indexed: 05/10/2023]
Abstract
Proximity effect, which is the coupling between distinct order parameters across interfaces of heterostructures, has attracted immense interest owing to the customizable multifunctionalities of diverse 3D materials. This facilitates various physical phenomena, such as spin order, charge transfer, spin torque, spin density wave, spin current, skyrmions, and Majorana fermions. These exotic physics play important roles for future spintronic applications. Nevertheless, several fundamental challenges remain for effective applications: unavoidable disorder and lattice mismatch limits in the growth process, short characteristic length of proximity, magnetic fluctuation in ultrathin films, and relatively weak spin-orbit coupling (SOC). Meanwhile, the extensive library of atomically thin, 2D van der Waals (vdW) layered materials, with unique characteristics such as strong SOC, magnetic anisotropy, and ultraclean surfaces, offers many opportunities to tailor versatile and more effective functionalities through proximity effects. Here, this paper focuses on magnetic proximity, i.e., proximitized magnetism and reviews the engineering of magnetism-related functionalities in 2D vdW layered heterostructures for next-generation electronic and spintronic devices. The essential factors of magnetism and interfacial engineering induced by magnetic layers are studied. The current limitations and future challenges associated with magnetic proximity-related physics phenomena in 2D heterostructures are further discussed.
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Affiliation(s)
- Eun‐Mi Choi
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS)Sungkyunkwan University (SKKU)Suwon16419Republic of Korea
| | - Kyung Ik Sim
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS)Sungkyunkwan University (SKKU)Suwon16419Republic of Korea
| | - Kenneth S. Burch
- Department of PhysicsBoston College140 Commonwealth AveChestnut HillMA02467‐3804USA
| | - Young Hee Lee
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS)Sungkyunkwan University (SKKU)Suwon16419Republic of Korea
- Department of Energy ScienceSungkyunkwan UniversitySuwon16419Republic of Korea
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19
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Garten LM, Staruch ML, Bussmann K, Wollmershauser J, Finkel P. Enhancing Converse Magnetoelectric Coupling Through Strain Engineering in Artificial Multiferroic Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2022; 14:25701-25709. [PMID: 35608249 DOI: 10.1021/acsami.2c03869] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Magnetoelectric materials present a unique opportunity for electric field-controlled magnetism. Even though strain-mediated multiferroic heterostructures have shown unprecedented increase in magnetoelectric coupling compared to single-phase materials, further improvements must be made before ultra-low power memory, logic, magnetic sensors, and wide spectrum antennas can be realized. This work presents how magnetoelectric coupling can be enhanced by simultaneously exploiting multiple strain engineering approaches in heterostructures composed of Fe0.5Co0.5/Ag multilayers on (011) Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 piezoelectric crystals. When grown and measured under strain, these heterostructures exhibit an effective converse magnetoelectric coefficient in the order of 10-5 s m-1: the highest directly measured, non-resonant value to-date. This response occurred at room temperature and at low electric fields (<2 kV cm-1). This large effect is enabled by magnetization reorientation caused by changing the magnetic anisotropy with strain from the substrate and the use of multilayered magnetic materials to minimize the internal stress from deposition. Additionally, the coercive field dependence of the magnetoelectric response under strain suggests contributions from domain-mediated magnetization switching modified by voltage-induced magnetoelastic anisotropy. This work highlights how multicomponent strain engineering enables enhanced magnetoelectric coupling in heterostructures and provides an approach to realize energy-efficient magnetoelectric applications.
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Affiliation(s)
- Lauren M Garten
- Material Science and Technology Division, U.S. Naval Research Laboratory, Washington D.C., Washington 20375, United States
- The School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Margo L Staruch
- Material Science and Technology Division, U.S. Naval Research Laboratory, Washington D.C., Washington 20375, United States
| | - Konrad Bussmann
- Material Science and Technology Division, U.S. Naval Research Laboratory, Washington D.C., Washington 20375, United States
| | - James Wollmershauser
- Material Science and Technology Division, U.S. Naval Research Laboratory, Washington D.C., Washington 20375, United States
| | - Peter Finkel
- Material Science and Technology Division, U.S. Naval Research Laboratory, Washington D.C., Washington 20375, United States
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20
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Zhong H, Li M, Zhang Q, Yang L, He R, Liu F, Liu Z, Li G, Sun Q, Xie D, Meng F, Li Q, He M, Guo EJ, Wang C, Zhong Z, Wang X, Gu L, Yang G, Jin K, Gao P, Ge C. Large-Scale Hf 0.5 Zr 0.5 O 2 Membranes with Robust Ferroelectricity. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2109889. [PMID: 35397192 DOI: 10.1002/adma.202109889] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/05/2021] [Revised: 04/05/2022] [Indexed: 06/14/2023]
Abstract
Hafnia-based compounds have considerable potential for use in nanoelectronics due to their compatibility with complementary metal-oxide-semiconductor devices and robust ferroelectricity at nanoscale sizes. However, the unexpected ferroelectricity in this class of compounds often remains elusive due to the polymorphic nature of hafnia, as well as the lack of suitable methods for the characterization of the mixed/complex phases in hafnia thin films. Herein, the preparation of centimeter-scale, crack-free, freestanding Hf0.5 Zr0.5 O2 (HZO) nanomembranes that are well suited for investigating the local crystallographic phases, orientations, and grain boundaries at both the microscopic and mesoscopic scales is reported. Atomic-level imaging of the plan-view crystallographic patterns shows that more than 80% of the grains are the ferroelectric orthorhombic phase, and that the mean equivalent diameter of these grains is about 12.1 nm, with values ranging from 4 to 50 nm. Moreover, the ferroelectric orthorhombic phase is stable in substrate-free HZO membranes, indicating that strain from the substrate is not responsible for maintaining the polar phase. It is also demonstrated that HZO capacitors prepared on flexible substrates are highly uniform, stable, and robust. These freestanding membranes provide a viable platform for the exploration of HZO polymorphic films with complex structures and pave the way to flexible nanoelectronics.
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Affiliation(s)
- Hai Zhong
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Mingqiang Li
- Electron microscopy laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Lihong Yang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Ri He
- Key Laboratory of Magnetic Materials Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Fang Liu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Zhuohui Liu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Ge Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Qinchao Sun
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- College of Physics, University-Industry Joint Center for Ocean Observation and Broadband Communication, State Key Laboratory of Bio-Fibers and Eco-Textiles Qingdao University, Qingdao, 266071, China
| | - Donggang Xie
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Fanqi Meng
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Qiang Li
- College of Physics, University-Industry Joint Center for Ocean Observation and Broadband Communication, State Key Laboratory of Bio-Fibers and Eco-Textiles Qingdao University, Qingdao, 266071, China
| | - Meng He
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Er-Jia Guo
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Can Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhicheng Zhong
- University of Chinese Academy of Sciences, Beijing, 100049, China
- Key Laboratory of Magnetic Materials Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Xinqiang Wang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
- Collaborative Innovation Centre of Quantum Matter, Beijing, 100871, China
| | - Lin Gu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Guozhen Yang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Kuijuan Jin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Peng Gao
- Electron microscopy laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
- Collaborative Innovation Centre of Quantum Matter, Beijing, 100871, China
| | - Chen Ge
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
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21
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Ramazanov S, Sobola D, Ţălu Ş, Orudzev F, Arman A, Kaspar P, Dallaev R, Ramazanov G. Multiferroic behavior of the functionalized surface of a flexible substrate by deposition of Bi 2 O 3 and Fe 2 O 3. Microsc Res Tech 2022; 85:1300-1310. [PMID: 34820938 DOI: 10.1002/jemt.23996] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/21/2021] [Revised: 10/07/2021] [Accepted: 11/10/2021] [Indexed: 02/05/2023]
Abstract
Thin films of bismuth and iron oxides were obtained by atomic layer deposition (ALD) on the surface of a flexible substrate poly(4,4'-oxydiphenylene-pyromellitimide) (Kapton) at a temperature of 250°C. The layer thickness was 50 nm. The samples were examined by secondary-ion mass spectrometry, and uniform distribution of elements in the film layer was observed. Surface morphology, electrical polarization, and mechanical properties were investigated by atomic force microscope, piezoelectric force microscopy, and force modulation microscopy. The values of current in the near-surface layer varied in the range of ±80 pA when a potential of 5 V was applied. Chemical analysis was performed by X-ray photoelectron spectroscopy, where the formation of Bi2 O3 and Fe2 O3 phases, as well as intermediate phases in the Bi-Fe-O system, was observed. Magnetic measurements were carried out by a vibrating sample magnetometer that showed a ferromagnetic response. The low-temperature method of functionalization of the Kapton surface with bismuth and iron oxides will make it possible to adapt the Bi-Fe-O system to flexible electronics.
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Affiliation(s)
- Shikhgasan Ramazanov
- Faculty of Chemistry, Department of Physical and Organic Chemistry, Dagestan State University, Makhachkala, Russia
| | - Dinara Sobola
- Department of Physics, Faculty of Electrical Engineering and Communication, Brno University of Technology, Brno, Czech Republic
- Academy of Sciences ČR, Institute of Physics of Materials, Brno, Czech Republic
| | - Ştefan Ţălu
- The Technical University of Cluj-Napoca, The Directorate of Research, Development and Innovation Management (DMCDI), Cluj-Napoca, Romania
| | - Farid Orudzev
- Faculty of Chemistry, Department of Physical and Organic Chemistry, Dagestan State University, Makhachkala, Russia
| | - Ali Arman
- Vacuum Technology Research Group, ACECR, Sharif University Branch, Tehran, Iran
| | - Pavel Kaspar
- Department of Physics, Faculty of Electrical Engineering and Communication, Brno University of Technology, Brno, Czech Republic
| | - Rashid Dallaev
- Department of Physics, Faculty of Electrical Engineering and Communication, Brno University of Technology, Brno, Czech Republic
| | - Guseyn Ramazanov
- Faculty of Technology, Course "Design", Dagestan State Technical University, Makhachkala, Russia
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22
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Salles P, Guzmán R, Zanders D, Quintana A, Fina I, Sánchez F, Zhou W, Devi A, Coll M. Bendable Polycrystalline and Magnetic CoFe 2O 4 Membranes by Chemical Methods. ACS APPLIED MATERIALS & INTERFACES 2022; 14:12845-12854. [PMID: 35232015 PMCID: PMC8931725 DOI: 10.1021/acsami.1c24450] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/17/2021] [Accepted: 02/21/2022] [Indexed: 06/14/2023]
Abstract
The preparation and manipulation of crystalline yet bendable functional complex oxide membranes has been a long-standing issue for a myriad of applications, in particular, for flexible electronics. Here, we investigate the viability to prepare magnetic and crystalline CoFe2O4 (CFO) membranes by means of the Sr3Al2O6 (SAO) sacrificial layer approach using chemical deposition techniques. Meticulous chemical and structural study of the SAO surface and SAO/CFO interface properties have allowed us to identify the formation of an amorphous SAO capping layer and carbonates upon air exposure, which dictate the crystalline quality of the subsequent CFO film growth. Vacuum annealing at 800 °C of SAO films promotes the elimination of the surface carbonates and the reconstruction of the SAO surface crystallinity. Ex-situ atomic layer deposition of CFO films at 250 °C on air-exposed SAO offers the opportunity to avoid high-temperature growth while achieving polycrystalline CFO films that can be successfully transferred to a polymer support preserving the magnetic properties under bending. Float on and transfer provides an alternative route to prepare freestanding and wrinkle-free CFO membrane films. The advances and challenges presented in this work are expected to help increase the capabilities to grow different oxide compositions and heterostructures of freestanding films and their range of functional properties.
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Affiliation(s)
- Pol Salles
- ICMAB-CSIC, Campus UAB, Bellaterra, Barcelona 08193, Spain
| | - Roger Guzmán
- School
of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing 100049, China
| | - David Zanders
- Inorganic
Materials Chemistry, Ruhr University Bochum, Universitätsstrasse 150, Bochum 44801, Germany
| | | | - Ignasi Fina
- ICMAB-CSIC, Campus UAB, Bellaterra, Barcelona 08193, Spain
| | | | - Wu Zhou
- School
of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Anjana Devi
- Inorganic
Materials Chemistry, Ruhr University Bochum, Universitätsstrasse 150, Bochum 44801, Germany
| | - Mariona Coll
- ICMAB-CSIC, Campus UAB, Bellaterra, Barcelona 08193, Spain
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23
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Shi Q, Parsonnet E, Cheng X, Fedorova N, Peng RC, Fernandez A, Qualls A, Huang X, Chang X, Zhang H, Pesquera D, Das S, Nikonov D, Young I, Chen LQ, Martin LW, Huang YL, Íñiguez J, Ramesh R. The role of lattice dynamics in ferroelectric switching. Nat Commun 2022; 13:1110. [PMID: 35236832 PMCID: PMC8891289 DOI: 10.1038/s41467-022-28622-z] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/09/2021] [Accepted: 02/03/2022] [Indexed: 11/10/2022] Open
Abstract
Reducing the switching energy of ferroelectric thin films remains an important goal in the pursuit of ultralow-power ferroelectric memory and logic devices. Here, we elucidate the fundamental role of lattice dynamics in ferroelectric switching by studying both freestanding bismuth ferrite (BiFeO3) membranes and films clamped to a substrate. We observe a distinct evolution of the ferroelectric domain pattern, from striped, 71° ferroelastic domains (spacing of ~100 nm) in clamped BiFeO3 films, to large (10's of micrometers) 180° domains in freestanding films. By removing the constraints imposed by mechanical clamping from the substrate, we can realize a ~40% reduction of the switching voltage and a consequent ~60% improvement in the switching speed. Our findings highlight the importance of a dynamic clamping process occurring during switching, which impacts strain, ferroelectric, and ferrodistortive order parameters and plays a critical role in setting the energetics and dynamics of ferroelectric switching.
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Affiliation(s)
- Qiwu Shi
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.
- College of Materials Science and Engineering, Sichuan University, Chengdu, 610065, China.
| | - Eric Parsonnet
- Department of Physics, University of California, Berkeley, CA, 94720, USA
| | - Xiaoxing Cheng
- Department of Materials Science and Engineering, Penn State University, University Park, Pennsylvania, 16802, PA, USA
| | - Natalya Fedorova
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology, L-4362, Esch/Alzette, Luxembourg
| | - Ren-Ci Peng
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Information and Engineering, Xi'an Jiaotong University, 710049, Xi'an, China
- School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, China
| | - Abel Fernandez
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - Alexander Qualls
- Department of Physics, University of California, Berkeley, CA, 94720, USA
| | - Xiaoxi Huang
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - Xue Chang
- College of Materials Science and Engineering, Sichuan University, Chengdu, 610065, China
| | - Hongrui Zhang
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - David Pesquera
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - Sujit Das
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
- Material Research Centre, Indian Institute of Science, Bangalore, 560012, India
| | - Dmitri Nikonov
- Components Research, Intel Corporation, Hillsboro, OR, 97142, USA
| | - Ian Young
- Components Research, Intel Corporation, Hillsboro, OR, 97142, USA
| | - Long-Qing Chen
- Department of Materials Science and Engineering, Penn State University, University Park, Pennsylvania, 16802, PA, USA
| | - Lane W Martin
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Yen-Lin Huang
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan.
| | - Jorge Íñiguez
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology, L-4362, Esch/Alzette, Luxembourg
- Department of Physics and Materials Science, University of Luxembourg, L-4422, Belvaux, Luxembourg
| | - Ramamoorthy Ramesh
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.
- Department of Physics, University of California, Berkeley, CA, 94720, USA.
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
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24
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Wang J, Chen A, Li P, Zhang S. Magnetoelectric Memory Based on Ferromagnetic/Ferroelectric Multiferroic Heterostructure. MATERIALS 2021; 14:ma14164623. [PMID: 34443144 PMCID: PMC8401036 DOI: 10.3390/ma14164623] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/28/2021] [Revised: 07/24/2021] [Accepted: 08/13/2021] [Indexed: 12/03/2022]
Abstract
Electric-field control of magnetism is significant for the next generation of large-capacity and low-power data storage technology. In this regard, the renaissance of a multiferroic compound provides an elegant platform owing to the coexistence and coupling of ferroelectric (FE) and magnetic orders. However, the scarcity of single-phase multiferroics at room temperature spurs zealous research in pursuit of composite systems combining a ferromagnet with FE or piezoelectric materials. So far, electric-field control of magnetism has been achieved in the exchange-mediated, charge-mediated, and strain-mediated ferromagnetic (FM)/FE multiferroic heterostructures. Concerning the giant, nonvolatile, and reversible electric-field control of magnetism at room temperature, we first review the theoretical and representative experiments on the electric-field control of magnetism via strain coupling in the FM/FE multiferroic heterostructures, especially the CoFeB/PMN–PT [where PMN–PT denotes the (PbMn1/3Nb2/3O3)1−x-(PbTiO3)x] heterostructure. Then, the application in the prototype spintronic devices, i.e., spin valves and magnetic tunnel junctions, is introduced. The nonvolatile and reversible electric-field control of tunneling magnetoresistance without assistant magnetic field in the magnetic tunnel junction (MTJ)/FE architecture shows great promise for the future of data storage technology. We close by providing the main challenges of this and the different perspectives for straintronics and spintronics.
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Affiliation(s)
- Jiawei Wang
- College of Science, Zhejiang University of Technology, Hangzhou 310023, China;
| | - Aitian Chen
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
- Correspondence: (A.C.); (P.L.); (S.Z.)
| | - Peisen Li
- College of Intelligence Science and Technology, National University of Defense Technology, Changsha 410073, China
- Correspondence: (A.C.); (P.L.); (S.Z.)
| | - Sen Zhang
- College of Liberal Arts and Sciences, National University of Defense Technology, Changsha 410073, China
- Correspondence: (A.C.); (P.L.); (S.Z.)
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25
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Datt G, Kotnana G, Maddu R, Vallin Ö, Joshi DC, Peddis D, Barucca G, Kamalakar MV, Sarkar T. Combined Bottom-Up and Top-Down Approach for Highly Ordered One-Dimensional Composite Nanostructures for Spin Insulatronics. ACS APPLIED MATERIALS & INTERFACES 2021; 13:37500-37509. [PMID: 34325507 PMCID: PMC8397244 DOI: 10.1021/acsami.1c09582] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/24/2021] [Accepted: 07/19/2021] [Indexed: 06/13/2023]
Abstract
Engineering magnetic proximity effects-based devices requires developing efficient magnetic insulators. In particular, insulators, where magnetic phases show dramatic changes in texture on the nanometric level, could allow us to tune the proximity-induced exchange splitting at such distances. In this paper, we report the fabrication and characterization of highly ordered two-dimensional arrays of LaFeO3 (LFO)-CoFe2O4 (CFO) biphasic magnetic nanowires, grown on silicon substrates using a unique combination of bottom-up and top-down synthesis approaches. The regularity of the patterns was confirmed using atomic force microscopy and scanning electron microscopy techniques, whereas magnetic force microscopy images established the magnetic homogeneity of the patterned nanowires and absence of any magnetic debris between the wires. Transmission electron microscopy shows a close spatial correlation between the LFO and CFO phases, indicating strong grain-to-grain interfacial coupling, intrinsically different from the usual core-shell structures. Magnetic hysteresis loops reveal the ferrimagnetic nature of the composites up to room temperature and the presence of a strong magnetic coupling between the two phases, and electrical transport measurements demonstrate the strong insulating behavior of the LFO-CFO composite, which is found to be governed by Mott-variable range hopping conduction mechanisms. A shift in the Raman modes in the composite sample compared to those of pure CFO suggests the existence of strain-mediated elastic coupling between the two phases in the composite sample. Our work offers ordered composite nanowires with strong interfacial coupling between the two phases that can be directly integrated for developing multiphase spin insulatronic devices and emergent magnetic interfaces.
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Affiliation(s)
- Gopal Datt
- Department
of Materials Science and Engineering, Uppsala
University, Box 35, Uppsala SE-751
03, Sweden
| | - Ganesh Kotnana
- Department
of Materials Science and Engineering, Uppsala
University, Box 35, Uppsala SE-751
03, Sweden
| | - Ramu Maddu
- Department
of Materials Science and Engineering, Uppsala
University, Box 35, Uppsala SE-751
03, Sweden
| | - Örjan Vallin
- Department
of Materials Science and Engineering, Uppsala
University, Box 35, Uppsala SE-751
03, Sweden
| | - Deep Chandra Joshi
- Department
of Materials Science and Engineering, Uppsala
University, Box 35, Uppsala SE-751
03, Sweden
| | - Davide Peddis
- Dipartimento
di Chimica e Chimica Industriale, Università
di Genova, Via Dodecaneso
31, Genova I-16146, Italy
- Institute
of Structure of Matter, Italian National
Research Council (CNR), Monterotondo
Scalo, 00015 Rome, Italy
| | - Gianni Barucca
- Department
SIMAU, Università Politecnica delle
Marche, Via Brecce Bianche
12, Ancona 60131, Italy
| | - M. Venkata Kamalakar
- Department
of Physics and Astronomy, Uppsala University, Uppsala SE-751 20, Sweden
| | - Tapati Sarkar
- Department
of Materials Science and Engineering, Uppsala
University, Box 35, Uppsala SE-751
03, Sweden
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26
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Pesquera D, Parsonnet E, Qualls A, Xu R, Gubser AJ, Kim J, Jiang Y, Velarde G, Huang YL, Hwang HY, Ramesh R, Martin LW. Beyond Substrates: Strain Engineering of Ferroelectric Membranes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2003780. [PMID: 32964567 DOI: 10.1002/adma.202003780] [Citation(s) in RCA: 27] [Impact Index Per Article: 6.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/02/2020] [Revised: 08/19/2020] [Indexed: 06/11/2023]
Abstract
Strain engineering in perovskite oxides provides for dramatic control over material structure, phase, and properties, but is restricted by the discrete strain states produced by available high-quality substrates. Here, using the ferroelectric BaTiO3 , production of precisely strain-engineered, substrate-released nanoscale membranes is demonstrated via an epitaxial lift-off process that allows the high crystalline quality of films grown on substrates to be replicated. In turn, fine structural tuning is achieved using interlayer stress in symmetric trilayer oxide-metal/ferroelectric/oxide-metal structures fabricated from the released membranes. In devices integrated on silicon, the interlayer stress provides deterministic control of ordering temperature (from 75 to 425 °C) and releasing the substrate clamping is shown to dramatically impact ferroelectric switching and domain dynamics (including reducing coercive fields to <10 kV cm-1 and improving switching times to <5 ns for a 20 µm diameter capacitor in a 100-nm-thick film). In devices integrated on flexible polymers, enhanced room-temperature dielectric permittivity with large mechanical tunability (a 90% change upon ±0.1% strain application) is demonstrated. This approach paves the way toward the fabrication of ultrafast CMOS-compatible ferroelectric memories and ultrasensitive flexible nanosensor devices, and it may also be leveraged for the stabilization of novel phases and functionalities not achievable via direct epitaxial growth.
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Affiliation(s)
- David Pesquera
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, Barcelona, 08193, Spain
| | - Eric Parsonnet
- Department of Physics, University of California, Berkeley, CA, 94720, USA
| | - Alexander Qualls
- Department of Physics, University of California, Berkeley, CA, 94720, USA
| | - Ruijuan Xu
- Department of Applied Physics, Stanford University, Stanford, CA, 94305, USA
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Andrew J Gubser
- Department of Nuclear Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
| | - Jieun Kim
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
| | - Yizhe Jiang
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
| | - Gabriel Velarde
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
| | - Yen-Lin Huang
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
| | - Harold Y Hwang
- Department of Applied Physics, Stanford University, Stanford, CA, 94305, USA
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Ramamoorthy Ramesh
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Lane W Martin
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
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