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Duan S, Zhang X, Xi Y, Liu D, Zhang X, Li C, Jiang L, Li L, Chen H, Ren X, Hu W. Solution-Processed Ultralow Voltage Organic Transistors With Sharp Switching for Adaptive Visual Perception. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2405030. [PMID: 38808576 DOI: 10.1002/adma.202405030] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/08/2024] [Revised: 05/26/2024] [Indexed: 05/30/2024]
Abstract
Neuromorphic visual systems can emulate biological retinal systems to perceive visual information under different levels of illumination, making them have considerable potential for future intelligent vehicles and vision automation. However, the complex circuits and high operating voltages of conventional artificial vision systems present great challenges for device integration and power consumption. Here, bioinspired synaptic transistors based on organic single crystal phototransistors are reported, which exhibit excitation and inhibition synaptic plasticity with time-varying. By manipulating the charge dynamics of the trapping centers of organic crystal-electret vertical stacks, organic transistors can operate below 1 V with record high on/off ratios close to 108 and sharp switching with a subthreshold swing of 59.8 mV dec-1. Moreover, the approach offers visual adaptation with highly localized modulation and over 98.2% recognition accuracy under different illumination levels. These bioinspired visual adaptation transistors offer great potential for simplifying the circuitry of artificial vision systems and will contribute to the development of machine vision applications.
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Affiliation(s)
- Shuming Duan
- Key Laboratory of Organic Integrated Circuits, Ministry of Education, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, China
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou, 350207, China
| | - Xianghong Zhang
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
| | - Yue Xi
- Key Laboratory of Organic Integrated Circuits, Ministry of Education, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, China
| | - Di Liu
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
| | - Xiaotao Zhang
- Key Laboratory of Organic Integrated Circuits, Ministry of Education, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, China
| | - Chunlei Li
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
| | - Lang Jiang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
| | - Liqiang Li
- Key Laboratory of Organic Integrated Circuits, Ministry of Education, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, China
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou, 350207, China
| | - Huipeng Chen
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
| | - Xiaochen Ren
- Key Laboratory of Organic Integrated Circuits, Ministry of Education, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, China
| | - Wenping Hu
- Key Laboratory of Organic Integrated Circuits, Ministry of Education, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, China
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou, 350207, China
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Song H, Chen S, Sun X, Cui Y, Yildirim T, Kang J, Yang S, Yang F, Lu Y, Zhang L. Enhancing 2D Photonics and Optoelectronics with Artificial Microstructures. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2403176. [PMID: 39031754 PMCID: PMC11348073 DOI: 10.1002/advs.202403176] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/26/2024] [Revised: 06/04/2024] [Indexed: 07/22/2024]
Abstract
By modulating subwavelength structures and integrating functional materials, 2D artificial microstructures (2D AMs), including heterostructures, superlattices, metasurfaces and microcavities, offer a powerful platform for significant manipulation of light fields and functions. These structures hold great promise in high-performance and highly integrated optoelectronic devices. However, a comprehensive summary of 2D AMs remains elusive for photonics and optoelectronics. This review focuses on the latest breakthroughs in 2D AM devices, categorized into electronic devices, photonic devices, and optoelectronic devices. The control of electronic and optical properties through tuning twisted angles is discussed. Some typical strategies that enhance light-matter interactions are introduced, covering the integration of 2D materials with external photonic structures and intrinsic polaritonic resonances. Additionally, the influences of external stimuli, such as vertical electric fields, enhanced optical fields and plasmonic confinements, on optoelectronic properties is analysed. The integrations of these devices are also thoroughly addressed. Challenges and future perspectives are summarized to stimulate research and development of 2D AMs for future photonics and optoelectronics.
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Affiliation(s)
- Haizeng Song
- Henan Key Laboratory of Rare Earth Functional MaterialsZhoukou Normal UniversityZhoukou466001China
- College of Physics, Nanjing University of Aeronautics and AstronauticsKey Laboratory of Aerospace Information Materials and Physics (NUAA), MIITNanjing211106China
| | - Shuai Chen
- College of Physics, Nanjing University of Aeronautics and AstronauticsKey Laboratory of Aerospace Information Materials and Physics (NUAA), MIITNanjing211106China
| | - Xueqian Sun
- School of Engineering, College of Engineering and Computer Sciencethe Australian National UniversityCanberraACT2601Australia
| | - Yichun Cui
- National Key Laboratory of Science and Technology on Test Physics and Numerical MathematicsBeijing100190China
| | - Tanju Yildirim
- Faculty of Science and EngineeringSouthern Cross UniversityEast LismoreNSW2480Australia
| | - Jian Kang
- College of Physics, Nanjing University of Aeronautics and AstronauticsKey Laboratory of Aerospace Information Materials and Physics (NUAA), MIITNanjing211106China
| | - Shunshun Yang
- College of Physics, Nanjing University of Aeronautics and AstronauticsKey Laboratory of Aerospace Information Materials and Physics (NUAA), MIITNanjing211106China
| | - Fan Yang
- College of Physics, Nanjing University of Aeronautics and AstronauticsKey Laboratory of Aerospace Information Materials and Physics (NUAA), MIITNanjing211106China
| | - Yuerui Lu
- School of Engineering, College of Engineering and Computer Sciencethe Australian National UniversityCanberraACT2601Australia
| | - Linglong Zhang
- College of Physics, Nanjing University of Aeronautics and AstronauticsKey Laboratory of Aerospace Information Materials and Physics (NUAA), MIITNanjing211106China
- Laboratory of Solid State MicrostructuresNanjing UniversityNanjing210093China
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3
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Zhang T, Chen Z, Zhang W, Wang L, Yu G. Recent Progress of Fluorinated Conjugated Polymers. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2403961. [PMID: 38830614 DOI: 10.1002/adma.202403961] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/18/2024] [Revised: 05/16/2024] [Indexed: 06/05/2024]
Abstract
In recent years, conjugated polymers have received widespread attention due to their characteristic advantages of light weight, favorable solution processability, and structural modifiability. Among various conjugated polymers, fluorinated ones have developed rapidly to achieve high-performance n-type or ambipolar polymeric semiconductors. The uniqueness of fluorinated conjugated polymers contains the high coplanarity of their structures, lower frontier molecular orbital energy levels, and strong nonbonding interactions. In this review, first the fluorinated building blocks, including fluorinated benzene and thiophene rings, fluorinated B←N bridged units, and fluoroalkyl side chains are summarized. Subsequently, different synthetic methods of fluorinated conjugated polymers are described, with a special focus on their respective advantages and disadvantages. Then, with these numerous fluorinated structures and appropriate synthetic methods bear in mind, the properties and applications of the fluorinated conjugated polymers, such as cyclopentadithiophene-, amide-, and imide-based polymers, and B←N embedded polymers, are systematically discussed. The introduction of fluorine atoms can further enhance the electron-deficiency of the backbone, influencing the charge carrier transport performance. The promising fluorinated conjugated polymers are applied widely in organic field-effect transistors, organic solar cells, organic thermoelectric devices, and other organic opto-electric devices. Finally, the outlook on the challenges and future development of fluorinated conjugated polymers is systematically discussed.
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Affiliation(s)
- Tianhao Zhang
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Zhihui Chen
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Weifeng Zhang
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Liping Wang
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Gui Yu
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
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Sheng F, Deng W, Ren X, Liu X, Meng X, Shi J, Grigorian S, Jie J, Zhang X. Breaking Fundamental Limitation of Flow-Induced Anisotropic Growth for Large-Scale and Fast Printing of Organic Single-Crystal Films. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2401822. [PMID: 38555558 DOI: 10.1002/adma.202401822] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/02/2024] [Revised: 03/19/2024] [Indexed: 04/02/2024]
Abstract
Advanced organic electronic technologies have put forward a pressing demand for cost-effective and high-throughput fabrication of organic single-crystal films (OSCFs). However, solution-printed OSCFs are typically plagued by the existence of abundant structural defects, which pose a formidable challenge to achieving large-scale and high-performance organic electronics. Here, it is elucidated that these structural defects are mainly originated from printing flow-induced anisotropic growth, an important factor that is overlooked for too long. In light of this, a surfactant-additive printing method is proposed to effectively overcome the anisotropic growth, enabling the deposition of uniform OSCFs over the wafer scale at a high speed of 1.2 mm s-1 at room temperature. The resulting OSCF exhibits appealing performance with a high average mobility up to 10.7 cm2 V-1 s-1, which is one of the highest values for flexible organic field-effect transistor arrays. Moreover, large-scale OSCF-based flexible logic circuits, which can be bent without degradation to a radius as small as 4.0 mm and over 1000 cycles are realized. The work provides profound insights into breaking the limitation of flow-induced anisotropic growth and opens new avenues for printing large-scale organic single-crystal electronics.
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Affiliation(s)
- Fangming Sheng
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, China
| | - Wei Deng
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, China
| | - Xiaobin Ren
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, China
| | - Xinyue Liu
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, China
| | - Xinghan Meng
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, China
| | - Jialin Shi
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, China
| | - Souren Grigorian
- Department of Physics, University of Siegen, 57072, Siegen, Germany
| | - Jiansheng Jie
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, China
- Macao Institute of Materials Science and Engineering (MIMSE), MUST-SUDA Joint Research Center for Advanced Functional Materials, Macau University of Science and Technology, Taipa, Macau SAR, 999078, China
| | - Xiujuan Zhang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, China
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Qu H, Zhang S, Cao J, Wu Z, Chai Y, Li W, Li LJ, Ren W, Wang X, Zeng H. Identifying atomically thin isolated-band channels for intrinsic steep-slope transistors by high-throughput study. Sci Bull (Beijing) 2024; 69:1427-1436. [PMID: 38531717 DOI: 10.1016/j.scib.2024.03.017] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/22/2023] [Revised: 01/22/2024] [Accepted: 03/04/2024] [Indexed: 03/28/2024]
Abstract
Developing low-power FETs holds significant importance in advancing logic circuits, especially as the feature size of MOSFETs approaches sub-10 nanometers. However, this has been restricted by the thermionic limitation of SS, which is limited to 60 mV per decade at room temperature. Herein, we proposed a strategy that utilizes 2D semiconductors with an isolated-band feature as channels to realize sub-thermionic SS in MOSFETs. Through high-throughput calculations, we established a guiding principle that combines the atomic structure and orbital interaction to identify their sub-thermionic transport potential. This guides us to screen 192 candidates from the 2D material database comprising 1608 systems. Additionally, the physical relationship between the sub-thermionic transport performances and electronic structures is further revealed, which enables us to predict 15 systems with promising device performances for low-power applications with supply voltage below 0.5 V. This work opens a new way for the low-power electronics based on 2D materials and would inspire extensive interests in the experimental exploration of intrinsic steep-slope MOSFETs.
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Affiliation(s)
- Hengze Qu
- MIIT Key Laboratory of Advanced Display Materials and Devices, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Shengli Zhang
- MIIT Key Laboratory of Advanced Display Materials and Devices, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
| | - Jiang Cao
- School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Zhenhua Wu
- Key Laboratory of Microelectronics Device and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China
| | - Yang Chai
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong 999077, China
| | - Weisheng Li
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, China
| | - Lain-Jong Li
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong 999077, China
| | - Wencai Ren
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
| | - Xinran Wang
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, China; School of Integrated Circuits, Nanjing University, Suzhou 215163, China; Suzhou Laboratory, Suzhou 215009, China
| | - Haibo Zeng
- MIIT Key Laboratory of Advanced Display Materials and Devices, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
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Luo Z, Yu Z, Lu X, Niu W, Yu Y, Yao Y, Tian F, Tan CL, Sun H, Gao L, Qin W, Xu Y, Zhao Q, Song XX. Van der Waals Magnetic Electrode Transfer for Two-Dimensional Spintronic Devices. NANO LETTERS 2024; 24:6183-6191. [PMID: 38728596 DOI: 10.1021/acs.nanolett.4c01885] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2024]
Abstract
Two-dimensional (2D) materials are promising candidates for spintronic applications. Maintaining their atomically smooth interfaces during integration of ferromagnetic (FM) electrodes is crucial since conventional metal deposition tends to induce defects at the interfaces. Meanwhile, the difficulties in picking up FM metals with strong adhesion and in achieving conductance match between FM electrodes and spin transport channels make it challenging to fabricate high-quality 2D spintronic devices using metal transfer techniques. Here, we report a solvent-free magnetic electrode transfer technique that employs a graphene layer to assist in the transfer of FM metals. It also serves as part of the FM electrode after transfer for optimizing spin injection, which enables the realization of spin valves with excellent performance based on various 2D materials. In addition to two-terminal devices, we demonstrate that the technique is applicable for four-terminal spin valves with nonlocal geometry. Our results provide a promising future of realizing 2D spintronic applications using the developed magnetic electrode transfer technique.
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Affiliation(s)
- Zhongzhong Luo
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), State Key Laboratory of Organic Electronics and Information Displays, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China
| | - Zhihao Yu
- Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Xiangqian Lu
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Wei Niu
- School of Science, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Yao Yu
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Yu Yao
- Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Fuguo Tian
- Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Chee Leong Tan
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Huabin Sun
- Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Li Gao
- School of Science, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Wei Qin
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Yong Xu
- Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Qiang Zhao
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), State Key Laboratory of Organic Electronics and Information Displays, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Xiang-Xiang Song
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
- Suzhou Institute for Advanced Research, University of Science and Technology of China Suzhou 215123, China
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Song J, Liu H, Zhao Z, Lin P, Yan F. Flexible Organic Transistors for Biosensing: Devices and Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2300034. [PMID: 36853083 DOI: 10.1002/adma.202300034] [Citation(s) in RCA: 16] [Impact Index Per Article: 16.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/02/2023] [Revised: 02/20/2023] [Indexed: 06/18/2023]
Abstract
Flexible and stretchable biosensors can offer seamless and conformable biological-electronic interfaces for continuously acquiring high-fidelity signals, permitting numerous emerging applications. Organic thin film transistors (OTFTs) are ideal transducers for flexible and stretchable biosensing due to their soft nature, inherent amplification function, biocompatibility, ease of functionalization, low cost, and device diversity. In consideration of the rapid advances in flexible-OTFT-based biosensors and their broad applications, herein, a timely and comprehensive review is provided. It starts with a detailed introduction to the features of various OTFTs including organic field-effect transistors and organic electrochemical transistors, and the functionalization strategies for biosensing, with a highlight on the seminal work and up-to-date achievements. Then, the applications of flexible-OTFT-based biosensors in wearable, implantable, and portable electronics, as well as neuromorphic biointerfaces are detailed. Subsequently, special attention is paid to emerging stretchable organic transistors including planar and fibrous devices. The routes to impart stretchability, including structural engineering and material engineering, are discussed, and the implementations of stretchable organic transistors in e-skin and smart textiles are included. Finally, the remaining challenges and the future opportunities in this field are summarized.
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Affiliation(s)
- Jiajun Song
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 999077, P. R. China
| | - Hong Liu
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 999077, P. R. China
| | - Zeyu Zhao
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 999077, P. R. China
| | - Peng Lin
- Shenzhen Key Laboratory of Special Functional Materials and Guangdong Research Center for Interfacial Engineering of Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Feng Yan
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 999077, P. R. China
- Research Institute of Intelligent Wearable Systems, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 999077, P. R. China
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8
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Yao ZF, Wu HT, Zhuang FD, Zhang PF, Li QY, Wang JY, Pei J. Achieving Ideal and Environmentally Stable n-Type Charge Transport in Polymer Field-Effect Transistors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2306010. [PMID: 37884476 DOI: 10.1002/smll.202306010] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/06/2023] [Revised: 10/15/2023] [Indexed: 10/28/2023]
Abstract
Realizing ideal charge transport in field-effect transistors (FETs) of conjugated polymers is crucial for evaluating device performance, such as carrier mobility and practical applications of conjugated polymers. However, the current FETs using conjugated polymers as the active layers generally show certain non-ideal transport characteristics and poor stability. Here, ideal charge transport of n-type polymer FETs is achieved on flexible polyimide substrates by using an organic-inorganic hybrid double-layer dielectric. Deposited conjugated polymer films show highly ordered structures and low disorder, which are supported by grazing-incidence wide-angle X-ray scattering, near-edge X-ray absorption fine structure, and molecular dynamics simulations. Furthermore, the organic-inorganic hybrid double-layer dielectric provides low interfacial defects, leading to excellent charge transport in FETs with high electron mobility (1.49 ± 0.46 cm2 V-1 s-1) and ideal reliability factors (102 ± 7%). Fabricated polymer FETs show a self-encapsulation effect, resulting in high stability of the FET charge transport. The polymer FETs still work with high mobility above 1 cm2 V-1 s-1 after storage in air for more than 300 days. Compared with state-of-the-art conjugated polymer FETs, this work simultaneously achieves ideal charge transport and environmental stability in n-type polymer FETs, facilitating rapid device optimization of high-performance polymer electronics.
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Affiliation(s)
- Ze-Fan Yao
- Beijing National Laboratory for Molecular Sciences (BNLMS), Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, Center of Soft Matter Science and Engineering, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
| | - Hao-Tian Wu
- Beijing National Laboratory for Molecular Sciences (BNLMS), Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, Center of Soft Matter Science and Engineering, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
| | - Fang-Dong Zhuang
- Ningbo Boya Poly Advanced Materials Co. Ltd., Ningbo, 315042, China
| | - Peng-Fei Zhang
- Ningbo Boya Poly Advanced Materials Co. Ltd., Ningbo, 315042, China
| | - Qi-Yi Li
- Beijing National Laboratory for Molecular Sciences (BNLMS), Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, Center of Soft Matter Science and Engineering, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
| | - Jie-Yu Wang
- Beijing National Laboratory for Molecular Sciences (BNLMS), Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, Center of Soft Matter Science and Engineering, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
| | - Jian Pei
- Beijing National Laboratory for Molecular Sciences (BNLMS), Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, Center of Soft Matter Science and Engineering, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
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9
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Yuan M, Qiu Y, Gao H, Feng J, Jiang L, Wu Y. Molecular Electronics: From Nanostructure Assembly to Device Integration. J Am Chem Soc 2024; 146:7885-7904. [PMID: 38483827 DOI: 10.1021/jacs.3c14044] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/28/2024]
Abstract
Integrated electronics and optoelectronics based on organic semiconductors have attracted considerable interest in displays, photovoltaics, and biosensing owing to their designable electronic properties, solution processability, and flexibility. Miniaturization and integration of devices are growing trends in molecular electronics and optoelectronics for practical applications, which requires large-scale and versatile assembly strategies for patterning organic micro/nano-structures with simultaneously long-range order, pure orientation, and high resolution. Although various integration methods have been developed in past decades, molecular electronics still needs a versatile platform to avoid defects and disorders due to weak intermolecular interactions in organic materials. In this perspective, a roadmap of organic integration technologies in recent three decades is provided to review the history of molecular electronics. First, we highlight the importance of long-range-ordered molecular packing for achieving exotic electronic and photophysical properties. Second, we classify the strategies for large-scale integration of molecular electronics through the control of nucleation and crystallographic orientation, and evaluate them based on factors of resolution, crystallinity, orientation, scalability, and versatility. Third, we discuss the multifunctional devices and integrated circuits based on organic field-effect transistors (OFETs) and photodetectors. Finally, we explore future research directions and outlines the need for further development of molecular electronics, including assembly of doped organic semiconductors and heterostructures, biological interfaces in molecular electronics and integrated organic logics based on complementary FETs.
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Affiliation(s)
- Meng Yuan
- Key Laboratory of Bio-inspired Materials and Interfacial Science, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
- University of Chinese Academy of Sciences (UCAS), Beijing 100049, P. R. China
| | - Yuchen Qiu
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun 130012, P. R. China
| | - Hanfei Gao
- Suzhou Institute for Advanced Research, University of Science and Technology of China, Suzhou 215123, P. R. China
| | - Jiangang Feng
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore
| | - Lei Jiang
- Key Laboratory of Bio-inspired Materials and Interfacial Science, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Yuchen Wu
- Key Laboratory of Bio-inspired Materials and Interfacial Science, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
- University of Chinese Academy of Sciences (UCAS), Beijing 100049, P. R. China
- Key Laboratory for Special Functional Materials of Ministry of Education, National and Local Joint Engineering Research Center for High-Efficiency Display and Lighting Technology, Collaborative Innovation Center of Nano Functional Materials and Applications, Henan University, Kaifeng 475004, P. R. China
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10
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Wang B, Yin X, Yu S, Wang H. Hysteresis-Free and Bias-Stable Organic Transistors Fabricated by Dip-Coating with a Vertical-Phase-Separation Structure. MATERIALS (BASEL, SWITZERLAND) 2024; 17:1465. [PMID: 38611980 PMCID: PMC11012522 DOI: 10.3390/ma17071465] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/14/2024] [Revised: 03/15/2024] [Accepted: 03/20/2024] [Indexed: 04/14/2024]
Abstract
The morphology of organic films plays a pivotal role in determining the performance of transistor devices. While the dip-coating technique is capable of producing highly oriented organic films, it often encounters challenges such as limited coverage and the presence of defects in gaps between strips, adversely affecting device performance. In this study, we address these challenges by increasing solution viscosity through the incorporation of a substantial proportion of dielectric polymers, thereby enhancing the participation of additional molecules during the film formation process when pulled up. This method produces continuous and oriented organic films with a notable absence of gaps, significantly improving the carrier mobility of transistor devices by more than twofold. Importantly, the fabricated devices exhibit remarkable reliability, showing no hysteresis even after 200 cycles of measurement. Furthermore, the current and threshold voltages of the devices demonstrate exceptional stability, maintaining steady after 10,000 s of bias measurement. This approach provides a solution for the cost-effective and large-scale production of organic transistors, contributing significantly to the advancement of organic electronics.
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Affiliation(s)
- Bingxi Wang
- Key Laboratory of Automobile Materials, Ministry of Education, School of Materials Science and Engineering, Jilin University, Changchun 130012, China; (B.W.)
| | - Xiaowen Yin
- Key Laboratory of Automobile Materials, Ministry of Education, School of Materials Science and Engineering, Jilin University, Changchun 130012, China; (B.W.)
| | - Shuwen Yu
- Division of Energy Research Resources, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, China
| | - Haibo Wang
- Key Laboratory of Automobile Materials, Ministry of Education, School of Materials Science and Engineering, Jilin University, Changchun 130012, China; (B.W.)
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11
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Jiang X, Shi C, Wang Z, Huang L, Chi L. Healthcare Monitoring Sensors Based on Organic Transistors: Surface/Interface Strategy and Performance. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2308952. [PMID: 37951211 DOI: 10.1002/adma.202308952] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/01/2023] [Revised: 10/16/2023] [Indexed: 11/13/2023]
Abstract
Organic transistors possess inherent advantages such as flexibility, biocompatibility, customizable chemical structures, solution-processability, and amplifying capabilities, making them highly promising for portable healthcare sensor applications. Through convenient and diverse modifications at the material and device surfaces or interfaces, organic transistors allow for a wide range of sensor applications spanning from chemical and biological to physical sensing. In this comprehensive review, the surface and interface engineering aspect associated with four types of typical healthcare sensors is focused. The device operation principles and sensing mechanisms are systematically analyzed and highlighted, and particularly surface/interface functionalization strategies that contribute to the enhancement of sensing performance are focused. An outlook and perspective on the critical issues and challenges in the field of healthcare sensing using organic transistors are provided as well.
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Affiliation(s)
- Xingyu Jiang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, P. R. China
| | - Cheng Shi
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, P. R. China
| | - Zi Wang
- Suzhou Laboratory, 388 Ruoshui Road, Suzhou, 215123, P. R. China
| | - Lizhen Huang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, P. R. China
| | - Lifeng Chi
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, P. R. China
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12
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Wang S, Han L, Zou Y, Liu B, He ZH, Huang Y, Wang Z, Zheng L, Hu YX, Zhao Q, Sun Y, Li ZQ, Gao P, Chen X, Guo X, Li L, Hu W. Ultrahigh-gain organic transistors based on van der Waals metal-barrier interlayer-semiconductor junction. SCIENCE ADVANCES 2023; 9:eadj4656. [PMID: 38055810 DOI: 10.1126/sciadv.adj4656] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/29/2023] [Accepted: 11/06/2023] [Indexed: 12/08/2023]
Abstract
Intrinsic gain is a vital figure of merit in transistors, closely related to signal amplification, operation voltage, power consumption, and circuit simplification. However, organic thin-film transistors (OTFTs) targeted at high gain have suffered from challenges such as narrow subthreshold operating voltage, low-quality interface, and uncontrollable barrier. Here, we report a van der Waals metal-barrier interlayer-semiconductor junction-based OTFT, which shows ultrahigh performance including ultrahigh gain of ~104, low saturation voltage, negligible hysteresis, and good stability. The high-quality van der Waals-contacted junctions are mainly attributed to patterning EGaIn liquid metal electrodes by low-energy microfluidic processes. The wide-bandgap semiconductor Ga2O3 as barrier interlayer is achieved by in situ surface oxidation of EGaIn electrodes, allowing for an adjustable barrier height and expected thermionic emission properties. The organic inverters with a high gain of 5130 and a simplified current stabilizer are further demonstrated, paving a way for high-gain and low-power organic electronics.
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Affiliation(s)
- Shuguang Wang
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, Tianjin 300072, China
| | - Lei Han
- School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Ye Zou
- Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - Bingyao Liu
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Zhi-Hao He
- Department of Physics, Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Tianjin University, Tianjin 300350, China
| | - Yinan Huang
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, Tianjin 300072, China
| | - Zhongwu Wang
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, Tianjin 300072, China
| | - Lei Zheng
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, Tianjin 300072, China
| | - Yong-Xu Hu
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, Tianjin 300072, China
| | - Qiang Zhao
- College of Science, Civil Aviation University of China (CAUC), Tianjin 300300, China
| | - Yajing Sun
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, Tianjin 300072, China
| | - Zhi-Qing Li
- Department of Physics, Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Tianjin University, Tianjin 300350, China
| | - Peng Gao
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
| | - Xiaosong Chen
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, Tianjin 300072, China
| | - Xiaojun Guo
- School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Liqiang Li
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, Tianjin 300072, China
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin 300192, China
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou 350207, China
| | - Wenping Hu
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, Tianjin 300072, China
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin 300192, China
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou 350207, China
- Collaborative Innovation Center of Chemical Science and Engineering, Tianjin 300072, China
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13
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Wang F, Xie L, Sun N, Zhi T, Zhang M, Liu Y, Luo Z, Yi L, Zhao Q, Wang L. Deformable Catalytic Material Derived from Mechanical Flexibility for Hydrogen Evolution Reaction. NANO-MICRO LETTERS 2023; 16:32. [PMID: 37999792 PMCID: PMC10673806 DOI: 10.1007/s40820-023-01251-x] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2023] [Accepted: 10/21/2023] [Indexed: 11/25/2023]
Abstract
Deformable catalytic material with excellent flexible structure is a new type of catalyst that has been applied in various chemical reactions, especially electrocatalytic hydrogen evolution reaction (HER). In recent years, deformable catalysts for HER have made great progress and would become a research hotspot. The catalytic activities of deformable catalysts could be adjustable by the strain engineering and surface reconfiguration. The surface curvature of flexible catalytic materials is closely related to the electrocatalytic HER properties. Here, firstly, we systematically summarized self-adaptive catalytic performance of deformable catalysts and various micro-nanostructures evolution in catalytic HER process. Secondly, a series of strategies to design highly active catalysts based on the mechanical flexibility of low-dimensional nanomaterials were summarized. Last but not least, we presented the challenges and prospects of the study of flexible and deformable micro-nanostructures of electrocatalysts, which would further deepen the understanding of catalytic mechanisms of deformable HER catalyst.
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Affiliation(s)
- Fengshun Wang
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts & Telecommunications (NJUPT), 9 Wenyuan, Nanjing, 210023, People's Republic of China
| | - Lingbin Xie
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts & Telecommunications (NJUPT), 9 Wenyuan, Nanjing, 210023, People's Republic of China
| | - Ning Sun
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts & Telecommunications (NJUPT), 9 Wenyuan, Nanjing, 210023, People's Republic of China
| | - Ting Zhi
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts & Telecommunications (NJUPT), 9 Wenyuan, Nanjing, 210023, People's Republic of China.
| | - Mengyang Zhang
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts & Telecommunications (NJUPT), 9 Wenyuan, Nanjing, 210023, People's Republic of China
| | - Yang Liu
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts & Telecommunications (NJUPT), 9 Wenyuan, Nanjing, 210023, People's Republic of China
| | - Zhongzhong Luo
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts & Telecommunications (NJUPT), 9 Wenyuan, Nanjing, 210023, People's Republic of China
| | - Lanhua Yi
- Key Laboratory of Environmentally Friendly Chemistry and Applications of Ministry of Education, School of Chemistry, Xiangtan University, Xiangtan, 411105, People's Republic of China
| | - Qiang Zhao
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts & Telecommunications (NJUPT), 9 Wenyuan, Nanjing, 210023, People's Republic of China.
- State Key Laboratory of Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM) & Institute of Flexible Electronics (Future Technology), Nanjing University of Posts & Telecommunications, 9 Wenyuan, Nanjing, 210023, People's Republic of China.
| | - Longlu Wang
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts & Telecommunications (NJUPT), 9 Wenyuan, Nanjing, 210023, People's Republic of China.
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14
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Lee JA, Yoon J, Hwang S, Hwang H, Kwon JD, Lee SK, Kim Y. Integrated Logic Circuits Based on Wafer-Scale 2D-MoS 2 FETs Using Buried-Gate Structures. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2870. [PMID: 37947714 PMCID: PMC10649149 DOI: 10.3390/nano13212870] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/14/2023] [Revised: 10/20/2023] [Accepted: 10/25/2023] [Indexed: 11/12/2023]
Abstract
Two-dimensional (2D) transition-metal dichalcogenides (TMDs) materials, such as molybdenum disulfide (MoS2), stand out due to their atomically thin layered structure and exceptional electrical properties. Consequently, they could potentially become one of the main materials for future integrated high-performance logic circuits. However, the local back-gate-based MoS2 transistors on a silicon substrate can lead to the degradation of electrical characteristics. This degradation is caused by the abnormal effect of gate sidewalls, leading to non-uniform field controllability. Therefore, the buried-gate-based MoS2 transistors where the gate electrodes are embedded into the silicon substrate are fabricated. The several device parameters such as field-effect mobility, on/off current ratio, and breakdown voltage of gate dielectric are dramatically enhanced by field-effect mobility (from 0.166 to 1.08 cm2/V·s), on/off current ratio (from 4.90 × 105 to 1.52 × 107), and breakdown voltage (from 15.73 to 27.48 V) compared with a local back-gate-based MoS2 transistor, respectively. Integrated logic circuits, including inverters, NAND, NOR, AND, and OR gates, were successfully fabricated by 2-inch wafer-scale through the integration of a buried-gate MoS2 transistor array.
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Affiliation(s)
- Ju-Ah Lee
- Department of Energy and Electronic Materials, Surface Materials Division, Korea Institute of Materials Science (KIMS), Changwon 51508, Republic of Korea; (J.-A.L.); (J.Y.); (S.H.); (J.-D.K.)
- School of Materials Science and Engineering, Pusan National University, Busan 46241, Republic of Korea
| | - Jongwon Yoon
- Department of Energy and Electronic Materials, Surface Materials Division, Korea Institute of Materials Science (KIMS), Changwon 51508, Republic of Korea; (J.-A.L.); (J.Y.); (S.H.); (J.-D.K.)
| | - Seungkwon Hwang
- Department of Energy and Electronic Materials, Surface Materials Division, Korea Institute of Materials Science (KIMS), Changwon 51508, Republic of Korea; (J.-A.L.); (J.Y.); (S.H.); (J.-D.K.)
| | - Hyunsang Hwang
- Center for Single Atom-Based Semiconductor Device, Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea;
| | - Jung-Dae Kwon
- Department of Energy and Electronic Materials, Surface Materials Division, Korea Institute of Materials Science (KIMS), Changwon 51508, Republic of Korea; (J.-A.L.); (J.Y.); (S.H.); (J.-D.K.)
| | - Seung-Ki Lee
- School of Materials Science and Engineering, Pusan National University, Busan 46241, Republic of Korea
| | - Yonghun Kim
- Department of Energy and Electronic Materials, Surface Materials Division, Korea Institute of Materials Science (KIMS), Changwon 51508, Republic of Korea; (J.-A.L.); (J.Y.); (S.H.); (J.-D.K.)
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15
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Wang J, Ren Z, Pan J, Wu X, Jie J, Zhang X, Zhang X. Wafer-Scale Epitaxial Growth of Two-dimensional Organic Semiconductor Single Crystals toward High-Performance Transistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2301017. [PMID: 37436692 DOI: 10.1002/adma.202301017] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/02/2023] [Revised: 06/17/2023] [Accepted: 07/11/2023] [Indexed: 07/13/2023]
Abstract
The success of state-of-the-art electronics and optoelectronics relies heavily on the capability to fabricate semiconductor single-crystal wafers. However, the conventional epitaxial growth strategy for inorganic wafers is invalid for growing organic semiconductor single crystals due to the lack of lattice-matched epitaxial substrates and intricate nucleation behaviors, severely impeding the advancement of organic single-crystal electronics. Here, an anchored crystal-seed epitaxial growth method for wafer-scale growth of 2D organic semiconductor single crystals is developed for the first time. The crystal seed is firmly anchored on the viscous liquid surface, ensuring the steady epitaxial growth of organic single crystals from the crystal seed. The atomically flat liquid surface effectively eliminates the disturbance from substrate defects and greatly enhances the 2D growth of organic crystals. Using this approach, a wafer-scale few-layer bis(triethylsilythynyl)-anthradithphene (Dif-TES-ADT) single crystal is formed, yielding a breakthrough for organic field-effect transistors with a high reliable mobility up to 8.6 cm2 V-1 s-1 and an ultralow mobility variable coefficient of 8.9%. This work opens a new avenue to fabricate organic single-crystal wafers for high-performance organic electronics.
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Affiliation(s)
- Jinwen Wang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Zheng Ren
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Jing Pan
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Xiaofeng Wu
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Jiansheng Jie
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
- Macao Institute of Materials Science and Engineering, MUST-SUDA Joint Research Center for Advanced Functional Materials, Macau University of Science and Technology, Taipa, Macau, 999078, P. R. China
| | - Xiaohong Zhang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Xiujuan Zhang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
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16
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Huang Y, Wang Z, Chen X, Li L, Hu W. Stability bottleneck of organic field-effect transistors: from mechanism to solution. Sci Bull (Beijing) 2023; 68:1469-1473. [PMID: 37407360 DOI: 10.1016/j.scib.2023.06.016] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/07/2023]
Affiliation(s)
- Yinan Huang
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, Tianjin 300072, China; Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou 350207, China
| | - Zhongwu Wang
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, Tianjin 300072, China
| | - Xiaosong Chen
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, Tianjin 300072, China
| | - Liqiang Li
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, Tianjin 300072, China; Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou 350207, China; Haihe Laboratory of Sustainable Chemical Transformations, Tianjin 300192, China.
| | - Wenping Hu
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, Tianjin 300072, China; Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou 350207, China; Haihe Laboratory of Sustainable Chemical Transformations, Tianjin 300192, China.
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17
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Rezaee A, Carrabina J. Dual-Gate Organic Thin-Film Transistor and Multiplexer Chips for the Next Generation of Flexible EG-ISFET Sensor Chips. SENSORS (BASEL, SWITZERLAND) 2023; 23:6577. [PMID: 37514871 PMCID: PMC10384797 DOI: 10.3390/s23146577] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/15/2023] [Revised: 07/10/2023] [Accepted: 07/17/2023] [Indexed: 07/30/2023]
Abstract
Ion-sensitive field-effect transistors (ISFETs) are used as elementary devices to build many types of chemical sensors and biosensors. Organic thin-film transistor (OTFT) ISFETs use either small molecules or polymers as semiconductors together with an additive manufacturing process of much lower cost than standard silicon sensors and have the additional advantage of being environmentally friendly. OTFT ISFETs' drawbacks include limited sensitivity and higher variability. In this paper, we propose a novel design technique for integrating extended-gate OTFT ISFETs (OTFT EG-ISFETs) together with dual-gate OTFT multiplexers (MUXs) made in the same process. The achieved results show that our OTFT ISFET sensors are of the state of the art of the literature. Our microsystem architecture enables switching between the different ISFETs implemented in the chip. In the case of sensors with the same gain, we have a fault-tolerant architecture since we are able to replace the faulty sensor with a fault-free one on the chip. For a chip including sensors with different gains, an external processor can select the sensor with the required sensitivity.
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Affiliation(s)
- Ashkan Rezaee
- Department of Microelectronic and System, Autonomous University of Barcelona, 08193 Barcelona, Spain
| | - Jordi Carrabina
- Department of Microelectronic and System, Autonomous University of Barcelona, 08193 Barcelona, Spain
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18
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Affiliation(s)
- Jie Liu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - Wenping Hu
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Sciences, Tianjin University, Tianjin 300072, China
| | - Lang Jiang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China; Department of Chemistry, University of Chinese Academy of Sciences, Beijing 100049, China.
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19
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Zhao X, Zhang H, Zhang J, Liu J, Lei M, Jiang L. Organic Semiconductor Single Crystal Arrays: Preparation and Applications. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2300483. [PMID: 36967565 DOI: 10.1002/advs.202300483] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/20/2023] [Revised: 02/20/2023] [Indexed: 05/27/2023]
Abstract
The study of organic semiconductor single crystal (OSSC) arrays has recently attracted considerable interest given their potential applications in flexible displays, smart wearable devices, biochemical sensors, etc. Patterning of OSSCs is the prerequisite for the realization of organic integrated circuits. Patterned OSSCs can not only decrease the crosstalk between adjacent organic field-effect transistors (OFETs), but also can be conveniently integrated with other device elements which facilitate circuits application. Tremendous efforts have been devoted in the controllable preparation of OSSC arrays, and great progress has been achieved. In this review, the general strategies for patterning OSSCs are summarized, along with the discussion of the advantages and limitations of different patterning methods. Given the identical thickness of monolayer molecular crystals (MMCs) which is beneficial to achieve super uniformity of OSSC arrays and devices, patterning of MMCs is also emphasized. Then, OFET performance is summarized with comparison of the mobility and coefficient of variation based on the OSSC arrays prepared by different methods. Furthermore, advances of OSSC array-based circuits and flexible devices of different functions are highlighted. Finally, the challenges that need to be tackled in the future are presented.
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Affiliation(s)
- Xiaotong Zhao
- State Key Laboratory of Information Photonics and Optical Communications & School of Integrated Circuits, Beijing University of Posts and Telecommunications, Beijing, 100876, China
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
| | - Hantang Zhang
- College of Chemistry and Material Science, Shandong Agricultural University, Taian, 271018, China
| | - Jing Zhang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
- School of Chemistry and Materials Science of Shanxi Normal University & Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, Taiyuan, 031000, China
| | - Jie Liu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
| | - Ming Lei
- State Key Laboratory of Information Photonics and Optical Communications & School of Integrated Circuits, Beijing University of Posts and Telecommunications, Beijing, 100876, China
| | - Lang Jiang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
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20
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Luo Z, Yao Y, Liang M, Tian F, Sun H, Xu Y, Zhao Q, Yu Z. Molecular layer modulation of two-dimensional organic ferroelectric transistors. NANOTECHNOLOGY 2023; 34:27LT01. [PMID: 37015219 DOI: 10.1088/1361-6528/acca28] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/21/2022] [Accepted: 04/03/2023] [Indexed: 06/19/2023]
Abstract
Ferroelectric transistors hold great potential in low consumption devices. Due to the high film quality and clean system, two dimensional organic semiconductors are widely employed to fabricate high performance organic electronic devices and explore the modulation mechanism of the molecular packing on device performance. Here, we combine the ferroelectric hafnium oxide HfZrOxand two-dimensional molecular crystal 2,9-didecyldinaphtho[2,3-b:2',3'-f]thieno[3,2b]thiophene (C10-DNTT) with controllable layers to study the molecular layer modulation of ferroelectric organic thin-film transistors (OTFTs). The contact resistance, driving current and transconductance are directly affected by the additional access resistance across the upper molecular layers at the source/drain contact region. Simultaneously, the capacitance of Schottky junction related to the molecular layer thickness could effectively adjust the gate potential acting on the organic channel, further controlling the devices' subthreshold swing and transconductance efficiency. This work would promote the development of low voltage and high performance OTFTs.
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Affiliation(s)
- Zhongzhong Luo
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China
| | - Yu Yao
- State Key Laboratory of Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China
| | - Mingshan Liang
- State Key Laboratory of Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China
| | - Fuguo Tian
- State Key Laboratory of Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China
| | - Huabin Sun
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China
- Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, People's Republic of China
| | - Yong Xu
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China
- Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, People's Republic of China
| | - Qiang Zhao
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China
- State Key Laboratory of Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China
| | - Zhihao Yu
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China
- Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, People's Republic of China
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21
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Zong H, Wang M, Chen W, Zhang ZD, Cai JW, Shen C, Li LX, Kang SL, Fang Y, Zhou G, Wang SD. Reducing Contact Resistance in Organic Field-Effect Transistors: A Comprehensive Comparison between 2D and Microrod Single Crystals. ACS APPLIED MATERIALS & INTERFACES 2023; 15:19300-19306. [PMID: 37014251 DOI: 10.1021/acsami.3c01044] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
A comprehensive comparison of organic single crystals based on a single material but with different dimensions provides a unique approach to probe their carrier injection mechanism. In this report, both two-dimensional (2D) and microrod single crystals with the same crystalline structure of an identical thiopyran derivative, 7,14-dioctylnaphtho[2,1-f:6,5-f']bis(cyclopentane[b]thiopyran) (C8-SS), are grown on a glycerol surface with the space-confined method. Organic field-effect transistors (OFETs) based on the 2D C8-SS single crystal exhibit superior performance compared with those based on the microrod single crystal, particularly in their contact resistance (RC). It is demonstrated that the resistance of the crystal bulk in the contact region plays a key role in RC of the OFETs. Thus, among the 30 devices tested, the microrod OFETs typically appear contact-limited, whereas the 2D OFETs possess significantly reduced RC arising from the tiny thickness of the 2D single crystal. The 2D OFETs show high operational stability and high channel mobility up to 5.7 cm2/V·s. The elucidation of the contact behavior highlights the merits and great potential of 2D molecular single crystals in organic electronics.
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Affiliation(s)
- Hao Zong
- Laboratory of Advanced Materials, State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai 200438, P. R. China
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, Jiangsu, P. R. China
| | - Min Wang
- Laboratory of Advanced Materials, State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai 200438, P. R. China
| | - Weinan Chen
- Laboratory of Advanced Materials, State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai 200438, P. R. China
| | - Zhong-Da Zhang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, Jiangsu, P. R. China
| | - Jia-Wei Cai
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, Jiangsu, P. R. China
| | - Cong Shen
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, Jiangsu, P. R. China
| | - Li-Xing Li
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, Jiangsu, P. R. China
| | - Shui-Long Kang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, Jiangsu, P. R. China
| | - Yuan Fang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, Jiangsu, P. R. China
| | - Gang Zhou
- Laboratory of Advanced Materials, State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai 200438, P. R. China
| | - Sui-Dong Wang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, Jiangsu, P. R. China
- Macao Institute of Materials Science and Engineering (MIMSE), MUST-SUDA Joint Research Center for Advanced Functional Materials, Macau University of Science and Technology, Taipa 999078, Macao, P. R. China
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22
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Luo Z, Song X, Liu X, Lu X, Yao Y, Zeng J, Li Y, He D, Zhao H, Gao L, Yu Z, Niu W, Sun H, Xu Y, Liu S, Qin W, Zhao Q. Revealing the key role of molecular packing on interface spin polarization at two-dimensional limit in spintronic devices. SCIENCE ADVANCES 2023; 9:eade9126. [PMID: 37018394 PMCID: PMC10075958 DOI: 10.1126/sciadv.ade9126] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/19/2022] [Accepted: 03/03/2023] [Indexed: 06/19/2023]
Abstract
Understanding spinterfaces between magnetic metals and organic semiconductors is essential to unlock the great potentials that organic materials host for spintronic applications. Although plenty of efforts have been devoted to studying organic spintronic devices, exploring the role of metal/molecule spinterfaces at two-dimensional limit remains challenging because of excessive disorders and traps at the interfaces. Here, we demonstrate atomically smooth metal/molecule interfaces through nondestructively transferring magnetic electrodes on epitaxial grown single-crystalline layered organic films. Using such high-quality interfaces, we investigate spin injection of spin-valve devices based on organic films of different layers, in which molecules are packed in different manners. We find that the measured magnetoresistance and the estimated spin polarization increase markedly for bilayer devices compared with their monolayer counterparts. These observations reveal the key role of molecular packing on spin polarization, which is supported by density functional theory calculations. Our findings provide promising routes toward designing spinterfaces for organic spintronic devices.
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Affiliation(s)
- Zhongzhong Luo
- College of Electronic and Optical Engineering and College of Flexible Electronics (Future Technology), State Key Laboratory of Organic Electronics and Information Displays, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Xiangxiang Song
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
- Suzhou Institute for Advanced Research, University of Science and Technology of China, Suzhou 215123, China
| | - Xiaolong Liu
- School of New Energy, North China Electric Power University, Beijing 102206, China
| | - Xiangqian Lu
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Yu Yao
- Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Junpeng Zeng
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Yating Li
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Daowei He
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Huijuan Zhao
- Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Li Gao
- Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Zhihao Yu
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Wei Niu
- New Energy Technology Engineering Laboratory of Jiangsu Province and School of Science, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Huabin Sun
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Yong Xu
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China
| | - Shujuan Liu
- Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Wei Qin
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Qiang Zhao
- College of Electronic and Optical Engineering and College of Flexible Electronics (Future Technology), State Key Laboratory of Organic Electronics and Information Displays, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
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23
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Zou T, Kim HJ, Kim S, Liu A, Choi MY, Jung H, Zhu H, You I, Reo Y, Lee WJ, Kim YS, Kim CJ, Noh YY. High-Performance Solution-Processed 2D P-Type WSe 2 Transistors and Circuits through Molecular Doping. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2208934. [PMID: 36418776 DOI: 10.1002/adma.202208934] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/28/2022] [Revised: 11/05/2022] [Indexed: 06/16/2023]
Abstract
Semiconducting ink based on 2D single-crystal flakes with dangling-bond-free surfaces enables the implementation of high-performance devices on form-free substrates by cost-effective and scalable printing processes. However, the lack of solution-processed p-type 2D semiconducting inks with high mobility is an obstacle to the development of complementary integrated circuits. Here, a versatile strategy of doping with Br2 is reported to enhance the hole mobility by orders of magnitude for p-type transistors with 2D layered materials. Br2 -doped WSe2 transistors show a field-effect hole mobility of more than 27 cm2 V-1 s-1 , and a high on/off current ratio of ≈107 , and exhibits excellent operational stability during the on-off switching, cycling, and bias stressing testing. Moreover, complementary inverters composed of patterned p-type WSe2 and n-type MoS2 layered films are demonstrated with an ultra-high gain of 1280 under a driving voltage (VDD ) of 7 V. This work unveils the high potential of solution-processed 2D semiconductors with low-temperature processability for flexible devices and monolithic circuitry.
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Affiliation(s)
- Taoyu Zou
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
| | - Hyun-Jun Kim
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
| | - Soonhyo Kim
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
- Korea Research Institute of Standards and Science, Daejeon, 34113, Republic of Korea
| | - Ao Liu
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
| | - Min-Yeong Choi
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
| | - Haksoon Jung
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
| | - Huihui Zhu
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
| | - Insang You
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
| | - Youjin Reo
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
| | - Woo-Ju Lee
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
| | - Yong-Sung Kim
- Korea Research Institute of Standards and Science, Daejeon, 34113, Republic of Korea
- Department of Nano Science, University of Science and Technology, Daejeon, 34113, Republic of Korea
| | - Cheol-Joo Kim
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
| | - Yong-Young Noh
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
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24
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Liu K, Wang C, Liu B, Bian Y, Kuang J, Hou Y, Pan Z, Liu G, Huang X, Zhu Z, Qin M, Zhao Z, Jiang C, Liu Y, Guo Y. Low-Voltage Intrinsically Stretchable Organic Transistor Amplifiers for Ultrasensitive Electrophysiological Signal Detection. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2207006. [PMID: 36385514 DOI: 10.1002/adma.202207006] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/02/2022] [Revised: 10/18/2022] [Indexed: 06/16/2023]
Abstract
Stretchability is a prerequisite for electronic skin devices. However, state-of-the-art stretchable thin-film transistors do not possess sufficiently low operating voltages and good stability, significantly limiting their use in real-world biomedical applications. Herein, a van der Waals-controlling elastomer/carbon quantum dot interfacial polarization methodology is proposed to form a hybrid polymer dielectric with 620% tensile strain and large-area film uniformity (>A4 paper size). Using the hybrid polymer dielectrics, the prepared intrinsically stretchable organic thin-film transistors demonstrate a low operating voltage below 5 V, 100% strain tolerance, and excellent operational stability, as well as a high on-current/off-current ratio of 105 and a steep subthreshold slope of 500 mV dec-1 . Based on this device technology, an amplifier with a high gain of 90 V V-1 among the highest values of reported stretchable transistors is realized. This amplifier is at the first time applied to detect human electrophysical signals with an output signal amplitude of over 0.2 V, which even outperforms other types of the state-of-the-art organic amplifiers for human electrophysiology monitoring. This stretchable device technology sufficiently meets the safety and portability requirements of wearable biomedical applications, opening a new opportunity to e-skin with signal control and amplification capabilities.
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Affiliation(s)
- Kai Liu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Chemistry and Chemical Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Chengyu Wang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Chemistry and Chemical Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Bowen Liu
- BNRist/ICFC/CFET, Department of Electronic Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Yangshuang Bian
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Chemistry and Chemical Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Junhua Kuang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Chemistry and Chemical Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Yangkun Hou
- BNRist/ICFC/CFET, Department of Electronic Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Zhichao Pan
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Chemistry and Chemical Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Guocai Liu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Chemistry and Chemical Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Xin Huang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Chemistry and Chemical Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Zhiheng Zhu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Chemistry and Chemical Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Mingcong Qin
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Chemistry and Chemical Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Zhiyuan Zhao
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Chemistry and Chemical Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Chen Jiang
- BNRist/ICFC/CFET, Department of Electronic Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Yunqi Liu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Chemistry and Chemical Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Yunlong Guo
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Chemistry and Chemical Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
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25
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Ultralow contact resistance in organic transistors via orbital hybridization. Nat Commun 2023; 14:324. [PMID: 36658167 PMCID: PMC9852566 DOI: 10.1038/s41467-023-36006-0] [Citation(s) in RCA: 11] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/27/2022] [Accepted: 01/11/2023] [Indexed: 01/20/2023] Open
Abstract
Organic field-effect transistors (OFETs) are of interest in unconventional form of electronics. However, high-performance OFETs are currently contact-limited, which represent a major challenge toward operation in the gigahertz regime. Here, we realize ultralow total contact resistance (Rc) down to 14.0 Ω ∙ cm in C10-DNTT OFETs by using transferred platinum (Pt) as contact. We observe evidence of Pt-catalyzed dehydrogenation of side alkyl chains which effectively reduces the metal-semiconductor van der Waals gap and promotes orbital hybridization. We report the ultrahigh performance OFETs, including hole mobility of 18 cm2 V-1 s-1, saturation current of 28.8 μA/μm, subthreshold swing of 60 mV/dec, and intrinsic cutoff frequency of 0.36 GHz. We further develop resist-free transfer and patterning strategies to fabricate large-area OFET arrays, showing 100% yield and excellent variability in the transistor metrics. As alkyl chains widely exist in conjugated molecules and polymers, our strategy can potentially enhance the performance of a broad range of organic optoelectronic devices.
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26
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Haldar T, Wollandt T, Weis J, Zschieschang U, Klauk H, Weitz RT, Burghartz JN, Geiger M. High-gain, low-voltage unipolar logic circuits based on nanoscale flexible organic thin-film transistors with small signal delays. SCIENCE ADVANCES 2023; 9:eadd3669. [PMID: 36608119 PMCID: PMC9821857 DOI: 10.1126/sciadv.add3669] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/09/2022] [Accepted: 12/08/2022] [Indexed: 06/17/2023]
Abstract
One of the circuit topologies for the implementation of unipolar integrated circuits (circuits that use either p-channel or n-channel transistors, but not both) is the zero-VGS architecture. Zero-VGS circuits often provide excellent static performance (large small-signal gain and large noise margins), but they suffer from the large signal delay imposed by the load transistor. To address this limitation, we have used electron-beam lithography to fabricate zero-VGS circuits based on organic transistors with channel lengths as small as 120 nm on flexible polymeric substrates. For a supply voltage of 3 V, these circuits have characteristic signal-delay time constants of 14 ns for the low-to-high transition and 560 ns for the high-to-low transition of the circuit's output voltage. These signal delays represent the best dynamic performance reported to date for organic transistor-based zero-VGS circuits. The signal-delay time constant of 14 ns is also the smallest signal delay reported to date for flexible organic transistors.
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Affiliation(s)
- Tanumita Haldar
- Max Planck Institute for Solid State Research, Heisenbergstr. 1, Stuttgart 70569, Germany
| | - Tobias Wollandt
- Max Planck Institute for Solid State Research, Heisenbergstr. 1, Stuttgart 70569, Germany
| | - Jürgen Weis
- Max Planck Institute for Solid State Research, Heisenbergstr. 1, Stuttgart 70569, Germany
| | - Ute Zschieschang
- Max Planck Institute for Solid State Research, Heisenbergstr. 1, Stuttgart 70569, Germany
| | - Hagen Klauk
- Max Planck Institute for Solid State Research, Heisenbergstr. 1, Stuttgart 70569, Germany
| | - R Thomas Weitz
- First Institute of Physics, Georg August University of Göttingen, Friedrich-Hund-Platz 1, Göttingen 37077, Germany
| | - Joachim N Burghartz
- Institute for Microelectronics (IMS CHIPS), Allmandring 30a, Stuttgart 70569, Germany
| | - Michael Geiger
- Max Planck Institute for Solid State Research, Heisenbergstr. 1, Stuttgart 70569, Germany
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27
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Zhao Y, Wang W, He Z, Peng B, Di CA, Li H. High-performance and multifunctional organic field-effect transistors. CHINESE CHEM LETT 2022. [DOI: 10.1016/j.cclet.2022.108094] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/28/2022]
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28
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Liu Z, Kong J, Qu M, Zhao G, Zhang C. Progress in Data Acquisition of Wearable Sensors. BIOSENSORS 2022; 12:889. [PMID: 36291026 PMCID: PMC9599646 DOI: 10.3390/bios12100889] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/08/2022] [Revised: 10/10/2022] [Accepted: 10/13/2022] [Indexed: 06/16/2023]
Abstract
Wearable sensors have demonstrated wide applications from medical treatment, health monitoring to real-time tracking, human-machine interface, smart home, and motion capture because of the capability of in situ and online monitoring. Data acquisition is extremely important for wearable sensors, including modules of probes, signal conditioning, and analog-to-digital conversion. However, signal conditioning, analog-to-digital conversion, and data transmission have received less attention than probes, especially flexible sensing materials, in research on wearable sensors. Here, as a supplement, this paper systematically reviews the recent progress of characteristics, applications, and optimizations of transistor amplifiers and typical filters in signal conditioning, and mainstream analog-to-digital conversion strategies. Moreover, possible research directions on the data acquisition of wearable sensors are discussed at the end of the paper.
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29
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Chen Z, Duan S, Zhang X, Geng B, Xiao Y, Jie J, Dong H, Li L, Hu W. Organic Semiconductor Crystal Engineering for High-Resolution Layer-Controlled 2D Crystal Arrays. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2104166. [PMID: 34416051 DOI: 10.1002/adma.202104166] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2021] [Revised: 06/27/2021] [Indexed: 06/13/2023]
Abstract
2D organic semiconductor crystals (2DOSCs) have extraordinary charge transport capability, adjustable photoelectric properties, and superior flexibility, and have stimulated continuous research interest for next-generation electronic and optoelectronic applications. The prerequisite for achieving large-area and high-throughput optoelectronic device integration is to fabricate high-resolution 2DOSC arrays. Patterned substrate- and template-assisted self-assembly is an effective strategy to fabricate OSC arrays. However, the film thickness is difficult to control due to the complicated crystallization process during solvent evaporation. Therefore, the manufacturing of 2DOSC arrays with high-resolution and controllable molecular-layer numbers through solution-based patterning methods remains a challenge. Herein, a two-step strategy to produce high-resolution layer-controlled 2DOSC arrays is reported. First, large-scale 2DOSCs with well-defined layer numbers are obtained by a solution-processed organic semiconductor crystal engineering method. Next, the high-resolution layer-controlled 2DOSC arrays are fabricated by a polydimethylsiloxane mold-assisted selective contact evaporation printing technique. The organic field-effect transistors (OFETs) based on 2DOSC arrays have high electrical performance and excellent uniformity. The 2,6-bis(4-hexylphenyl)anthracene 2DOSC arrays-based OFETs have a small variation of 12.5% in mobility. This strategy can be applied to various organic semiconductors and pattern arrays. These demonstrations will offer more opportunities for 2DOSCs for integrated optoelectronic devices.
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Affiliation(s)
- Zheng Chen
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University & Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, China
| | - Shuming Duan
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University & Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, China
- Joint School of National University of Singapore and Tianjin University, Fuzhou International Campus of Tianjin University, Binhai New City, Fuzhou, 350207, China
| | - Xiaotao Zhang
- Institute of Molecular Aggregation Sciences, Tianjin University, Tianjin, 300072, China
| | - Bowen Geng
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University & Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, China
| | - Yanling Xiao
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, 215123, China
| | - Jiansheng Jie
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, 215123, China
| | - Huanli Dong
- National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
| | - Liqiang Li
- Institute of Molecular Aggregation Sciences, Tianjin University, Tianjin, 300072, China
| | - Wenping Hu
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University & Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, China
- Joint School of National University of Singapore and Tianjin University, Fuzhou International Campus of Tianjin University, Binhai New City, Fuzhou, 350207, China
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30
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Wearable Near-Field Communication Sensors for Healthcare: Materials, Fabrication and Application. MICROMACHINES 2022; 13:mi13050784. [PMID: 35630251 PMCID: PMC9146494 DOI: 10.3390/mi13050784] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/05/2022] [Revised: 04/18/2022] [Accepted: 04/21/2022] [Indexed: 01/27/2023]
Abstract
The wearable device industry is on the rise, with technology applications ranging from wireless communication technologies to the Internet of Things. However, most of the wearable sensors currently on the market are expensive, rigid and bulky, leading to poor data accuracy and uncomfortable wearing experiences. Near-field communication sensors are low-cost, easy-to-manufacture wireless communication technologies that are widely used in many fields, especially in the field of wearable electronic devices. The integration of wireless communication devices and sensors exhibits tremendous potential for these wearable applications by endowing sensors with new features of wireless signal transferring and conferring radio frequency identification or near-field communication devices with a sensing function. Likewise, the development of new materials and intensive research promotes the next generation of ultra-light and soft wearable devices for healthcare. This review begins with an introduction to the different components of near-field communication, with particular emphasis on the antenna design part of near-field communication. We summarize recent advances in different wearable areas of near-field communication sensors, including structural design, material selection, and the state of the art of scenario-based development. The challenges and opportunities relating to wearable near-field communication sensors for healthcare are also discussed.
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Jiao H, Wang X, Chen Y, Guo S, Wu S, Song C, Huang S, Huang X, Tai X, Lin T, Shen H, Yan H, Hu W, Meng X, Chu J, Zhang Y, Wang J. HgCdTe/black phosphorus van der Waals heterojunction for high-performance polarization-sensitive midwave infrared photodetector. SCIENCE ADVANCES 2022; 8:eabn1811. [PMID: 35544556 PMCID: PMC9094662 DOI: 10.1126/sciadv.abn1811] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/09/2021] [Accepted: 03/25/2022] [Indexed: 05/05/2023]
Abstract
New-generation infrared detectors call for higher operation temperature and polarization sensitivity. For traditional HgCdTe infrared detectors, the additional polarization optics and cryogenic cooling are necessary to achieve high-performance infrared polarization detection, while they can complicate this system and limit the integration. Here, a mixed-dimensional HgCdTe/black phosphorous van der Waals heterojunction photodiode is proposed for polarization-sensitive midwave infrared photodetection. Benefiting from van der Waals integration, type III broken-gap band alignment heterojunctions are achieved. Anisotropy optical properties of black phosphorous bring polarization sensitivity from visible light to midwave infrared without external optics. Our devices show an outstanding performance at room temperature without applied bias, with peak blackbody detectivity as high as 7.93 × 1010 cm Hz1/2 W-1 and average blackbody detectivity over 2.1 × 1010 cm Hz1/2 W-1 in midwave infrared region. This strategy offers a possible practical solution for next-generation infrared detector with high operation temperature, high performance, and multi-information acquisition.
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Affiliation(s)
- Hanxue Jiao
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
| | - Xudong Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
| | - Yan Chen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
| | - Shuaifei Guo
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200438, China
| | - Shuaiqin Wu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
| | - Chaoyu Song
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200438, China
| | - Shenyang Huang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200438, China
| | - Xinning Huang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
| | - Xiaochi Tai
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
| | - Tie Lin
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
| | - Hong Shen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
| | - Hugen Yan
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200438, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
| | - Xiangjian Meng
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
| | - Junhao Chu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
| | - Yuanbo Zhang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200438, China
| | - Jianlu Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
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Kumagai S, Koguma T, Annaka T, Sawabe C, Tani Y, Sugiura H, Watanabe T, Hashizume D, Takeya J, Okamoto T. Regioselective Functionalization of Nitrogen-Embedded Perylene Diimides for High-Performance Organic Electron-Transporting Materials. BULLETIN OF THE CHEMICAL SOCIETY OF JAPAN 2022. [DOI: 10.1246/bcsj.20220051] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
Affiliation(s)
- Shohei Kumagai
- Material Innovation Research Center (MIRC) and Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, Kashiwa, Chiba 277-8561, Japan
| | - Takeru Koguma
- Material Innovation Research Center (MIRC) and Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, Kashiwa, Chiba 277-8561, Japan
| | - Tatsuro Annaka
- Material Innovation Research Center (MIRC) and Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, Kashiwa, Chiba 277-8561, Japan
| | - Chizuru Sawabe
- Material Innovation Research Center (MIRC) and Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, Kashiwa, Chiba 277-8561, Japan
| | - Yukio Tani
- Fujifilm Corp., Kaisei-machi, Ashigarakami-gun, Kanagawa 258-8577, Japan
| | - Hiroki Sugiura
- Fujifilm Corp., Kaisei-machi, Ashigarakami-gun, Kanagawa 258-8577, Japan
| | - Tetsuya Watanabe
- Fujifilm Corp., Kaisei-machi, Ashigarakami-gun, Kanagawa 258-8577, Japan
| | - Daisuke Hashizume
- RIKEN Center for Emergent Matter Science (CEMS), 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
| | - Jun Takeya
- Material Innovation Research Center (MIRC) and Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, Kashiwa, Chiba 277-8561, Japan
- MANA, National Institute for Materials Science (NIMS), Tsukuba 205-0044, Japan
| | - Toshihiro Okamoto
- Material Innovation Research Center (MIRC) and Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, Kashiwa, Chiba 277-8561, Japan
- PRESTO, JST, Kawaguchi, Saitama 332-0012, Japan
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Deng W, Lei H, Zhang X, Sheng F, Shi J, Zhang X, Liu X, Grigorian S, Zhang X, Jie J. Scalable Growth of Organic Single-Crystal Films via an Orientation Filter Funnel for High-Performance Transistors with Excellent Uniformity. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2109818. [PMID: 35073612 DOI: 10.1002/adma.202109818] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/02/2021] [Revised: 01/12/2022] [Indexed: 06/14/2023]
Abstract
Organic single-crystal films (OSCFs) provide an unprecedented opportunity for the development of new-generation organic single-crystal electronics. However, crystallization of organic films is normally governed by stochastic nucleation and incoherent growth, posing a formidable challenge to grow large-sized OSCFs. Here, an "orientation filter funnel" concept is presented for the scalable growth of OSCFs with well-aligned, singly orientated crystals. By rationally designing solvent wetting/dewetting patterns on the substrate, this approach can produce seed crystals with the same crystallographic orientation and then maintain epitaxial growth of these crystals, enabling the formation of large-area OSCFs. As a result, this unique concept for crystal growth not only enhances the average mobility of organic film by 4.5-fold but also improves its uniformity of electrical properties, with a low mobility variable coefficient of 9.8%, the new lowest record among organic devices. The method offers a general and scalable route to produce OSCFs toward real-word electronic applications.
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Affiliation(s)
- Wei Deng
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Hemeng Lei
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Xiujuan Zhang
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Fangming Sheng
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Jialin Shi
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Xiali Zhang
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Xinyue Liu
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Souren Grigorian
- Department of Physics, University of Siegen, 57072, Siegen, Germany
| | - Xiaohong Zhang
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Jiansheng Jie
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
- Macao Institute of Materials Science and Engineering, Macau University of Science and Technology, Taipa, Macau SAR, 999078, P. R. China
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Chen M, Peng B, Sporea RA, Podzorov V, Chan PKL. The Origin of Low Contact Resistance in Monolayer Organic Field‐Effect Transistors with van der Waals Electrodes. SMALL SCIENCE 2022. [DOI: 10.1002/smsc.202100115] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/05/2022] Open
Affiliation(s)
- Ming Chen
- Department of Mechanical Engineering The University of Hong Kong Pok Fu Lam Road Hong Kong China
| | - Boyu Peng
- Department of Mechanical Engineering The University of Hong Kong Pok Fu Lam Road Hong Kong China
| | - Radu A. Sporea
- Department of Electrical and Electronic Engineering Advanced Technology Institute University of Surrey Guildford GU2 7XH UK
| | - Vitaly Podzorov
- Department of Physics and Astronomy Rutgers University Piscataway 08854 NJ USA
| | - Paddy Kwok Leung Chan
- Department of Mechanical Engineering The University of Hong Kong Pok Fu Lam Road Hong Kong China
- Advanced Biomedical Instrumentation Centre Hong Kong Science Park Shatin Hong Kong China
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Abstract
Si-based complementary metal-oxide-semiconductor (CMOS) transistors for logic computing have represented the most essential foundation of digital electronic technologies for decades toward the modern information era. The continuous scaling down of the transistor feature size has promoted significant improvements in the computing performance while gradually tending to its limit. Ubiquitous intelligent technologies have quickly penetrated daily life, yielding a tremendous increase in highly data-centric computing applications. Hence, emerging logic devices extending and even transcending the existing CMOS technology are urgently needed to meet the rapidly growing demand for information processing capability, involving revolutionary innovations from material science and architecture design to device applications. This thus gives us the opportunity to realize logic devices for state-of-the-art computing that are fundamentally far beyond the current devices. In this Perspective, we discuss the recent innovative design strategies of emerging logic devices along with the opportunities and challenges, providing a promising avenue toward high-performance and diversiform logic computing in the post-Moore era.
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Affiliation(s)
- Ziqian Hao
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China
| | - Yang Yan
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China
| | - Yi Shi
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China
| | - Yun Li
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China
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Wei P, Shen Z, Qin X, Zhang P, Bu L, Chen Q, Roth SV, Lu G. Improving Charge Injection at Gold/Conjugated Polymer Contacts by Polymer Insulator-Assisted Annealing for Transistors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2105896. [PMID: 34913586 DOI: 10.1002/smll.202105896] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/26/2021] [Revised: 11/17/2021] [Indexed: 06/14/2023]
Abstract
The poor chemical miscibility between metal and organic materials usually leads to both structural and energetic mismatches at gold/organic interfaces, and thereby, high contact resistance of organic electronic devices. This study shows that the contact resistance of organic field-effect transistors is significantly reduced by one order of magnitude, by reforming the contact interface between gold electrodes and conjugated polymers upon a polymer insulator-assisted thermal annealing. Upon an optimized solution process, the conjugated polymer is homogenously distributed within the amorphous polymer insulator matrix with relatively low glass transition temperature, and thus, even a moderate annealing temperature can induce sufficient motion of conjugated polymer chains to simultaneously adjust the polymer orientation and improve the packing of gold atoms. Consequently, gold/conjugated polymer contact is reorganized after annealing, which improves both charge transport from bulk gold to interface and charge injection from gold into conjugated polymers. This method, with appropriate insulator matrix, is effective for improving the injection of both holes and electrons, and widely applicable for many unipolar and ambipolar conjugated polymers to optimize the device performance and simultaneously increase the optical transparency (over 80%). A frequency doubler and a phase modulator are demonstrated, respectively, using the ambipolar transistors with optimized charge injection properties.
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Affiliation(s)
- Peng Wei
- State Key Laboratory of Electrical Insulation and Power Equipment, and Frontier Institute of Science and Technology, Xi'an Jiaotong University, Xi'an, Shaanxi, 710054, China
| | - Zichao Shen
- State Key Laboratory of Electrical Insulation and Power Equipment, and Frontier Institute of Science and Technology, Xi'an Jiaotong University, Xi'an, Shaanxi, 710054, China
| | - Xinsu Qin
- School of Chemistry, Xi'an Jiaotong University, Xi'an, Shaanxi, 710049, China
| | - Peng Zhang
- School of Material Science and Engineering, PCFM Lab, Sun Yat-sen University, Guangzhou, Guangdong, 510275, China
| | - Laju Bu
- School of Chemistry, Xi'an Jiaotong University, Xi'an, Shaanxi, 710049, China
| | - Qing Chen
- Deutsches Elektronen-Synchrotron (DESY), Notkestr. 85, D-22607, Hamburg, Germany
| | - Stephan V Roth
- Deutsches Elektronen-Synchrotron (DESY), Notkestr. 85, D-22607, Hamburg, Germany
| | - Guanghao Lu
- State Key Laboratory of Electrical Insulation and Power Equipment, and Frontier Institute of Science and Technology, Xi'an Jiaotong University, Xi'an, Shaanxi, 710054, China
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37
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Dai DSHS, Peng B, Chen M, He Z, Leung TKW, Chik GKK, Fan S, Lu Y, Chan PKL. Organic Field-Effect Transistor Fabricated on Internal Shrinking Substrate. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2106066. [PMID: 34881811 DOI: 10.1002/smll.202106066] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/05/2021] [Revised: 11/10/2021] [Indexed: 06/13/2023]
Abstract
In the development of flexible organic field-effect transistors (OFET), downsizing and reduction of the operating voltage are essential for achieving a high current density with a low operating power. Although the bias voltage of the OFETs can be reduced by a high-k dielectric, achieving a threshold voltage close to zero remains a challenge. Moreover, the scaling down of OFETs demands the use of photolithography, and may lead to compatibility issues in organic semiconductors. Herein, a new strategy based on the ductile properties of organic semiconductors is developed to control the threshold voltage at close to zero while concurrently downsizing the OFETs. The OFETs are fabricated on prestressed polystyrene shrink film substrates at room temperature, then thermal energy (160 °C) is used to release the strain. The OFETs conformally attached to the wrinkled structure are shown to locally amplify the electric field. After shrinking, the horizontal device area is reduced by 75%, and the threshold voltage is decreased from -1.44 to -0.18 V, with a subthreshold swing of 74 mV dec-1 and intrinsic gain of 4.151 × 104 . These results reveal that the shrink film can be generally used as a substrate for downsizing OFETs and improving their performance.
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Affiliation(s)
- Derek Shui Hong Siddhartha Dai
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam, Hong Kong, China
- Advanced Biomedical Instrumentation Centre, Hong Kong, China
| | - Boyu Peng
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam, Hong Kong, China
| | - Ming Chen
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam, Hong Kong, China
| | - Zhenfei He
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam, Hong Kong, China
| | - Timothy Ka Wai Leung
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam, Hong Kong, China
| | - Gary Kwok Ki Chik
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam, Hong Kong, China
- Advanced Biomedical Instrumentation Centre, Hong Kong, China
| | - Sufeng Fan
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Yang Lu
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Paddy K L Chan
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam, Hong Kong, China
- Advanced Biomedical Instrumentation Centre, Hong Kong, China
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Liu J, Yu Y, Liu J, Li T, Li C, Zhang J, Hu W, Liu Y, Jiang L. Capillary-Confinement Crystallization for Monolayer Molecular Crystal Arrays. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2107574. [PMID: 34837661 DOI: 10.1002/adma.202107574] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/22/2021] [Revised: 11/03/2021] [Indexed: 06/13/2023]
Abstract
Organic single-crystalline semiconductors are highly desired for the fabrication of integrated electronic circuits, yet their uniform growth and efficient patterning is a huge challenge. Here, a general solution procedure named the "soft-template-assisted-assembly method" is developed to prepare centimeter-scale monolayer molecular crystal (MMC) arrays with precise regulation over their size and location via a capillary-confinement crystallization process. It is remarkable that the field-effect mobility of the array is highly uniform, with variation less than 4.4%, which demonstrates the most uniform organic single-crystal arrays ever reported so far. Simulations based on fluid dynamics are carried out to understand the function mechanism of this method. Thanks to the ultrasmooth crystalline orientation surface of MMCs, high-quality p-n heterojunction arrays can be prepared by weak epitaxy growth of n-type material atop the MMC. The p-n heterojunction field-effect transistors show ambipolar characteristics and the corresponding inverters constructed by these heterojunctions exhibit a competitive gain of 155. This work provides a general strategy to realize the preparation and application of logic complementary circuits based on patterned organic single crystals.
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Affiliation(s)
- Jie Liu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
| | - Yamin Yu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
| | - Jie Liu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
| | - Tao Li
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
| | - Chunlei Li
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
- University of the Chinese Academy of Sciences, Beijing, 100049, China
| | - Jing Zhang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
- University of the Chinese Academy of Sciences, Beijing, 100049, China
| | - Wenping Hu
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin, 300072, China
| | - Yunqi Liu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
- University of the Chinese Academy of Sciences, Beijing, 100049, China
| | - Lang Jiang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
- University of the Chinese Academy of Sciences, Beijing, 100049, China
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Ni Y, Feng J, Liu J, Yu H, Wei H, Du Y, Liu L, Sun L, Zhou J, Xu W. An Artificial Nerve Capable of UV-Perception, NIR-Vis Switchable Plasticity Modulation, and Motion State Monitoring. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2102036. [PMID: 34716679 PMCID: PMC8728819 DOI: 10.1002/advs.202102036] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/23/2021] [Revised: 08/26/2021] [Indexed: 06/02/2023]
Abstract
The first flexible organic-heterojunction neuromorphic transistor (OHNT) that senses broadband light, including near-ultraviolet (NUV), visible (vis), and near-infrared (NIR), and processes multiplexed-neurotransmission signals is demonstrated. For UV perception, electrical energy consumption down to 536 aJ per synaptic event is demonstrated, at least one order of magnitude lower than current UV-sensitive synaptic devices. For NIR- and vis-perception, switchable plasticity by alternating light sources is yielded for recognition and memory. The device emulates multiplexed neurochemical transition of different neurotransmitters such as dopamine and noradrenaline to form short-term and long-term responses. These facilitate the first realization of human-integrated motion state monitoring and processing using a synaptic hardware, which is then used for real-time heart monitoring of human movement. Motion state analysis with the 96% accuracy is then achieved by artificial neural network. This work provides important support to future biomedical electronics and neural prostheses.
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Affiliation(s)
- Yao Ni
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai UniversityTianjin300350P. R. China
- Key Laboratory of Optoelectronic Thin Film Devices and Technology of TianjinTianjin300350P. R. China
- Engineering Research Center of Thin Film Optoelectronics Technology of Ministry of EducationNankai UniversityTianjin300350P. R. China
- College of Electronic Information and Optical Engineering of Nankai UniversityNational Institute for Advanced MaterialsNankai UniversityTianjin300350P. R. China
| | - Jiulong Feng
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai UniversityTianjin300350P. R. China
- Key Laboratory of Optoelectronic Thin Film Devices and Technology of TianjinTianjin300350P. R. China
- Engineering Research Center of Thin Film Optoelectronics Technology of Ministry of EducationNankai UniversityTianjin300350P. R. China
- College of Electronic Information and Optical Engineering of Nankai UniversityNational Institute for Advanced MaterialsNankai UniversityTianjin300350P. R. China
| | - Jiaqi Liu
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai UniversityTianjin300350P. R. China
- Key Laboratory of Optoelectronic Thin Film Devices and Technology of TianjinTianjin300350P. R. China
- Engineering Research Center of Thin Film Optoelectronics Technology of Ministry of EducationNankai UniversityTianjin300350P. R. China
- College of Electronic Information and Optical Engineering of Nankai UniversityNational Institute for Advanced MaterialsNankai UniversityTianjin300350P. R. China
| | - Hang Yu
- College of Microelectronics and Communication EngineeringChongqing UniversityChongqing400044P. R. China
- No. 24 Research Institute of China Electronics Technology Group CorporationChongqing400060P. R. China
| | - Huanhuan Wei
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai UniversityTianjin300350P. R. China
- Key Laboratory of Optoelectronic Thin Film Devices and Technology of TianjinTianjin300350P. R. China
- Engineering Research Center of Thin Film Optoelectronics Technology of Ministry of EducationNankai UniversityTianjin300350P. R. China
- College of Electronic Information and Optical Engineering of Nankai UniversityNational Institute for Advanced MaterialsNankai UniversityTianjin300350P. R. China
| | - Yi Du
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai UniversityTianjin300350P. R. China
- Key Laboratory of Optoelectronic Thin Film Devices and Technology of TianjinTianjin300350P. R. China
- Engineering Research Center of Thin Film Optoelectronics Technology of Ministry of EducationNankai UniversityTianjin300350P. R. China
- College of Electronic Information and Optical Engineering of Nankai UniversityNational Institute for Advanced MaterialsNankai UniversityTianjin300350P. R. China
| | - Lu Liu
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai UniversityTianjin300350P. R. China
- Key Laboratory of Optoelectronic Thin Film Devices and Technology of TianjinTianjin300350P. R. China
- Engineering Research Center of Thin Film Optoelectronics Technology of Ministry of EducationNankai UniversityTianjin300350P. R. China
- College of Electronic Information and Optical Engineering of Nankai UniversityNational Institute for Advanced MaterialsNankai UniversityTianjin300350P. R. China
| | - Lin Sun
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai UniversityTianjin300350P. R. China
- Key Laboratory of Optoelectronic Thin Film Devices and Technology of TianjinTianjin300350P. R. China
- Engineering Research Center of Thin Film Optoelectronics Technology of Ministry of EducationNankai UniversityTianjin300350P. R. China
- College of Electronic Information and Optical Engineering of Nankai UniversityNational Institute for Advanced MaterialsNankai UniversityTianjin300350P. R. China
| | - Jianlin Zhou
- College of Microelectronics and Communication EngineeringChongqing UniversityChongqing400044P. R. China
| | - Wentao Xu
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai UniversityTianjin300350P. R. China
- Key Laboratory of Optoelectronic Thin Film Devices and Technology of TianjinTianjin300350P. R. China
- Engineering Research Center of Thin Film Optoelectronics Technology of Ministry of EducationNankai UniversityTianjin300350P. R. China
- College of Electronic Information and Optical Engineering of Nankai UniversityNational Institute for Advanced MaterialsNankai UniversityTianjin300350P. R. China
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Feng X, Peng X, Peng B, Li Z, Huang W, Yang S, Pei K, Sun Z, Huang F, Li H, Shuai Z, Zhai T. Effect of Strong Intermolecular Interaction in 2D Inorganic Molecular Crystals. J Am Chem Soc 2021; 143:20192-20201. [PMID: 34780690 DOI: 10.1021/jacs.1c08030] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
Strong intermolecular interactions in 2D organic molecular crystals arising from π-π stacking have been widely explored to achieve high thermal stability, high carrier mobility, and novel physical properties, which have already produced phenomenal progress. However, strong intermolecular interactions in 2D inorganic molecular crystals (2DIMCs) have rarely been investigated, severely limiting both the fundamental research in molecular physics and the potential applications of 2DIMCs for optoelectronics. Here, the effect of strong intermolecular interactions induced by unique short intermolecular Se-Se and P-Se contacts in 2D α-P4Se3 nanoflakes is reported. On the basis of theoretical calculations of the charge density distribution and an analysis of the thermal expansion and plastic-crystal transition, the physical picture of strong intermolecular interactions can be elucidated as a higher charge density between adjacent P4Se3 molecules, arising from an orderly and close packing of P4Se3 molecules. More importantly, encouraged by the strong intermolecular coupling, the in-plane mobility of α-P4Se3 nanoflakes is first calculated with a quantum nuclear tunneling model, and a competitive hole mobility of 0.4 cm2 V-1 s-1 is obtained. Our work sheds new light on the intermolecular interactions in 2D inorganic molecular crystals and is highly significant for promoting the development of molecular physics and optoelectronics.
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Affiliation(s)
- Xin Feng
- State Key Laboratory of Materials Processing and Die & Mould Technology and School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Xingliang Peng
- MOE Key Laboratory of Organic OptoElectronics and Molecular Engineering, Department of Chemistry, Tsinghua University, Beijing 100084, People's Republic of China
| | - Baixin Peng
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
| | - Zexin Li
- State Key Laboratory of Materials Processing and Die & Mould Technology and School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Wentao Huang
- State Key Laboratory of Materials Processing and Die & Mould Technology and School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Sijie Yang
- State Key Laboratory of Materials Processing and Die & Mould Technology and School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Ke Pei
- State Key Laboratory of Materials Processing and Die & Mould Technology and School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Zongdong Sun
- State Key Laboratory of Materials Processing and Die & Mould Technology and School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Fuqiang Huang
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China.,State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Huiqiao Li
- State Key Laboratory of Materials Processing and Die & Mould Technology and School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Zhigang Shuai
- MOE Key Laboratory of Organic OptoElectronics and Molecular Engineering, Department of Chemistry, Tsinghua University, Beijing 100084, People's Republic of China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology and School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
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