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Verma RS, Raj RK, Verma G, Kaushik BK. Energy-efficient synthetic antiferromagnetic skyrmion-based artificial neuronal device. NANOTECHNOLOGY 2024; 35:435401. [PMID: 39084230 DOI: 10.1088/1361-6528/ad6997] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/01/2024] [Accepted: 07/31/2024] [Indexed: 08/02/2024]
Abstract
Magnetic skyrmions offer unique characteristics such as nanoscale size, particle-like behavior, topological stability, and low depinning current density. These properties make them promising candidates for next-generation spintronics-based memory and neuromorphic computing. However, one of their distinctive features is their tendency to deviate from the direction of the applied driving force that may lead to the skyrmion annihilation at the edge of nanotrack during skyrmion motion, known as the skyrmion Hall effect (SkHE). To overcome this problem, synthetic antiferromagnetic (SAF) skyrmions that having bilayer coupling effect allows them to follow a straight path by nullifying SkHE making them alternative for ferromagnetic (FM) counterpart. This study proposes an integrate-and-fire (IF) artificial neuron model based on SAF skyrmions with asymmetric wedge-shaped nanotrack having self-sustainability of skyrmion numbers at the device window. The model leverages inter-skyrmion repulsion to replicate the IF mechanism of biological neuron. The device threshold, determined by the maximum number of pinned skyrmions at the device window, can be adjusted by tuning the current density applied to the nanotrack. Neuronal spikes occur when initial skyrmion reaches the detection unit after surpassing the device window by the accumulation of repulsive force that result in reduction of the device's contriving current results to design of high energy efficient for neuromorphic computing. Furthermore, work implements a binarized neuronal network accelerator using proposed IF neuron and SAF-SOT-MRAM based synaptic devices for national institute of standards and technology database image classification. The presented approach achieves significantly higher energy efficiency compared to existing technologies like SRAM and STT-MRAM, with improvements of 2.31x and 1.36x, respectively. The presented accelerator achieves 1.42x and 1.07x higher throughput efficiency per Watt as compared to conventional SRAM and STT-MRAM based designs.
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Affiliation(s)
- Ravi Shankar Verma
- Department of Electronics and Communication Engineering, Indian Institute of Technology, Roorkee 247667, India
| | - Ravish Kumar Raj
- Department of Electronics and Communication Engineering, Indian Institute of Technology, Roorkee 247667, India
| | - Gaurav Verma
- Department of Electronics and Communication Engineering, Indian Institute of Technology, Roorkee 247667, India
| | - Brajesh Kumar Kaushik
- Department of Electronics and Communication Engineering, Indian Institute of Technology, Roorkee 247667, India
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2
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Pham VT, Sisodia N, Di Manici I, Urrestarazu-Larrañaga J, Bairagi K, Pelloux-Prayer J, Guedas R, Buda-Prejbeanu LD, Auffret S, Locatelli A, Menteş TO, Pizzini S, Kumar P, Finco A, Jacques V, Gaudin G, Boulle O. Fast current-induced skyrmion motion in synthetic antiferromagnets. Science 2024; 384:307-312. [PMID: 38635712 DOI: 10.1126/science.add5751] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/21/2022] [Accepted: 03/14/2024] [Indexed: 04/20/2024]
Abstract
Magnetic skyrmions are topological magnetic textures that hold great promise as nanoscale bits of information in memory and logic devices. Although room-temperature ferromagnetic skyrmions and their current-induced manipulation have been demonstrated, their velocity has been limited to about 100 meters per second. In addition, their dynamics are perturbed by the skyrmion Hall effect, a motion transverse to the current direction caused by the skyrmion topological charge. Here, we show that skyrmions in compensated synthetic antiferromagnets can be moved by current along the current direction at velocities of up to 900 meters per second. This can be explained by the cancellation of the net topological charge leading to a vanishing skyrmion Hall effect. Our results open an important path toward the realization of logic and memory devices based on the fast manipulation of skyrmions in tracks.
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Affiliation(s)
- Van Tuong Pham
- Université Grenoble Alpes, CNRS, CEA, SPINTEC, 38054 Grenoble, France
- Université Grenoble Alpes, CNRS, Institut Néel, 38042 Grenoble, France
| | - Naveen Sisodia
- Université Grenoble Alpes, CNRS, CEA, SPINTEC, 38054 Grenoble, France
- Department of Physics, Indian Institute of Technology Gandhinagar, Gandhinagar 382355, Gujarat, India
| | - Ilaria Di Manici
- Université Grenoble Alpes, CNRS, CEA, SPINTEC, 38054 Grenoble, France
| | | | - Kaushik Bairagi
- Université Grenoble Alpes, CNRS, CEA, SPINTEC, 38054 Grenoble, France
| | | | - Rodrigo Guedas
- Université Grenoble Alpes, CNRS, CEA, SPINTEC, 38054 Grenoble, France
- Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM), Universidad Politécnica de Madrid, 28040 Madrid, Spain
| | | | - Stéphane Auffret
- Université Grenoble Alpes, CNRS, CEA, SPINTEC, 38054 Grenoble, France
| | - Andrea Locatelli
- Elettra-Sincrotrone Trieste S.C.p.A., 34149 Basovizza, Trieste, Italy
| | | | - Stefania Pizzini
- Université Grenoble Alpes, CNRS, Institut Néel, 38042 Grenoble, France
| | - Pawan Kumar
- Laboratoire Charles Coulomb, Université de Montpellier, CNRS, 34095 Montpellier, France
| | - Aurore Finco
- Laboratoire Charles Coulomb, Université de Montpellier, CNRS, 34095 Montpellier, France
| | - Vincent Jacques
- Laboratoire Charles Coulomb, Université de Montpellier, CNRS, 34095 Montpellier, France
| | - Gilles Gaudin
- Université Grenoble Alpes, CNRS, CEA, SPINTEC, 38054 Grenoble, France
| | - Olivier Boulle
- Université Grenoble Alpes, CNRS, CEA, SPINTEC, 38054 Grenoble, France
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3
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Yang S, Shen L, Zhao Y, Wu K, Li X, Shen K, Zhang S, Xu X, Åkerman J, Zhou Y. Generation of skyrmions by combining thermal and spin-orbit torque: breaking half skyrmions into skyrmions. NANOSCALE 2024; 16:7068-7075. [PMID: 38450557 DOI: 10.1039/d3nr05803d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/08/2024]
Abstract
Skyrmions, swirling spin textures with topologically protected stability and low critical driven-current density, can be generated from the stripe domain with current pulses, bringing them closer to practical applications in racetrack memory. However, the mechanism of this topological transition from the stripe domain to the skyrmion remains unclear because the transition process occurs at a nanosecond timescale, giving rise to difficulties in observing this process using imaging tools. In this study, we controlled the domain wall - skyrmion transition by combining Joule heating with spin-orbit torque (SOT) and experimentally observed the details of this process, by which we confirmed the mechanism: the spatial variation of the topological charge density induces half skyrmions branching from the stripe domains, and these half skyrmions overcome the surface tension and break away from the stripe domain, resulting in the generation of skyrmions. The details were observed by employing Joule heating to overcome the pinning effect and manipulating the strength of the SOT to induce the branching and breaking of half skyrmions. These findings offer new insights into skyrmion generation and serve as an important step towards the development of highly efficient devices for processing and computing based on skyrmionics.
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Affiliation(s)
- Sheng Yang
- School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen, 518172, China.
| | - Laichuan Shen
- The Center for Advanced Quantum Studies and Department of Physics, Beijing Normal University, Beijing, 100875, China
- Key Laboratory of Multi-scale Spin Physics, Ministry of Education, Beijing Normal University, Beijing, 100875, China
| | - Yuelei Zhao
- School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen, 518172, China.
| | - Kai Wu
- School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen, 518172, China.
| | - Xiaoguang Li
- Center for Advanced Material Diagnostic Technology, College of Engineering Physics, Shenzhen Technology University, Shenzhen, 518118, China
| | - Ka Shen
- The Center for Advanced Quantum Studies and Department of Physics, Beijing Normal University, Beijing, 100875, China
- Key Laboratory of Multi-scale Spin Physics, Ministry of Education, Beijing Normal University, Beijing, 100875, China
| | - Senfu Zhang
- Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou, 730000, China
| | - Xiaohong Xu
- School of Chemistry and Materials Science of Shanxi Normal University & Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, Taiyuan, 030006, China
- Research Institute of Materials Science of Shanxi Normal University & Collaborative Innovation Center for Shanxi Advanced Permanent Magnetic Materials and Technology, Taiyuan, 030006, China
| | - Johan Åkerman
- Department of Physics, University of Gothenburg, Gothenburg, 41296, Sweden
- Science and Innovation in Spintronics Research Institute of Electrical Communication, Tohoku University, Aoba-ku, 980-8577, Japan
| | - Yan Zhou
- School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen, 518172, China.
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4
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Urrestarazu Larrañaga J, Sisodia N, Guedas R, Pham VT, Di Manici I, Masseboeuf A, Garello K, Disdier F, Fernandez B, Wintz S, Weigand M, Belmeguenai M, Pizzini S, Sousa RC, Buda-Prejbeanu LD, Gaudin G, Boulle O. Electrical Detection and Nucleation of a Magnetic Skyrmion in a Magnetic Tunnel Junction Observed via Operando Magnetic Microscopy. NANO LETTERS 2024; 24:3557-3565. [PMID: 38499397 DOI: 10.1021/acs.nanolett.4c00316] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/20/2024]
Abstract
Magnetic skyrmions are topological spin textures which are envisioned as nanometer scale information carriers in magnetic memory and logic devices. The recent demonstrations of room temperature skyrmions and their current induced manipulation in ultrathin films were first steps toward the realization of such devices. However, important challenges remain regarding the electrical detection and the low-power nucleation of skyrmions, which are required for the read and write operations. Here, we demonstrate, using operando magnetic microscopy experiments, the electrical detection of a single magnetic skyrmion in a magnetic tunnel junction (MTJ) and its nucleation and annihilation by gate voltage via voltage control of magnetic anisotropy. The nucleated skyrmion can be manipulated by both gate voltages and external magnetic fields, leading to tunable intermediate resistance states. Our results unambiguously demonstrate the readout and voltage controlled write operations in a single MTJ device, which is a major milestone for low power skyrmion based technologies.
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Affiliation(s)
| | - Naveen Sisodia
- Univ. Grenoble Alpes, CNRS, CEA, Grenoble INP, SPINTEC, 38000 Grenoble, France
| | - Rodrigo Guedas
- Univ. Grenoble Alpes, CNRS, CEA, Grenoble INP, SPINTEC, 38000 Grenoble, France
| | - Van Tuong Pham
- Univ. Grenoble Alpes, CNRS, CEA, Grenoble INP, SPINTEC, 38000 Grenoble, France
- Univ. Grenoble Alpes, CNRS, Institut Néel, 38042 Grenoble, France
| | - Ilaria Di Manici
- Univ. Grenoble Alpes, CNRS, CEA, Grenoble INP, SPINTEC, 38000 Grenoble, France
| | - Aurélien Masseboeuf
- Univ. Grenoble Alpes, CNRS, CEA, Grenoble INP, SPINTEC, 38000 Grenoble, France
| | - Kevin Garello
- Univ. Grenoble Alpes, CNRS, CEA, Grenoble INP, SPINTEC, 38000 Grenoble, France
| | - Florian Disdier
- Univ. Grenoble Alpes, CNRS, CEA, Grenoble INP, SPINTEC, 38000 Grenoble, France
| | - Bruno Fernandez
- Univ. Grenoble Alpes, CNRS, Institut Néel, 38042 Grenoble, France
| | - Sebastian Wintz
- Max Planck Institute for Intelligent Systems, Heisenbergstraße 3, 70569 Stuttgart, Germany
- Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, D-14109 Berlin, Germany
| | - Markus Weigand
- Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, D-14109 Berlin, Germany
| | - Mohamed Belmeguenai
- LSPM (CNRS-UPR 3407), Université Paris 13, Sorbonne Paris Cité, 99 Avenue Jean-Baptiste Clément, 93430 Villetaneuse, France
| | - Stefania Pizzini
- Univ. Grenoble Alpes, CNRS, Institut Néel, 38042 Grenoble, France
| | - Ricardo C Sousa
- Univ. Grenoble Alpes, CNRS, CEA, Grenoble INP, SPINTEC, 38000 Grenoble, France
| | | | - Gilles Gaudin
- Univ. Grenoble Alpes, CNRS, CEA, Grenoble INP, SPINTEC, 38000 Grenoble, France
| | - Olivier Boulle
- Univ. Grenoble Alpes, CNRS, CEA, Grenoble INP, SPINTEC, 38000 Grenoble, France
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Bhukta M, Dohi T, Bharadwaj VK, Zarzuela R, Syskaki MA, Foerster M, Niño MA, Sinova J, Frömter R, Kläui M. Homochiral antiferromagnetic merons, antimerons and bimerons realized in synthetic antiferromagnets. Nat Commun 2024; 15:1641. [PMID: 38409221 PMCID: PMC10897388 DOI: 10.1038/s41467-024-45375-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/30/2023] [Accepted: 01/23/2024] [Indexed: 02/28/2024] Open
Abstract
The ever-growing demand for device miniaturization and energy efficiency in data storage and computing technology has prompted a shift towards antiferromagnetic topological spin textures as information carriers. This shift is primarily owing to their negligible stray fields, leading to higher possible device density and potentially ultrafast dynamics. We realize in this work such chiral in-plane topological antiferromagnetic spin textures namely merons, antimerons, and bimerons in synthetic antiferromagnets by concurrently engineering the effective perpendicular magnetic anisotropy, the interlayer exchange coupling, and the magnetic compensation ratio. We demonstrate multimodal vector imaging of the three-dimensional Néel order parameter, revealing the topology of those spin textures and a globally well-defined chirality, which is a crucial requirement for controlled current-induced dynamics. Our analysis reveals that the interplay between interlayer exchange and interlayer magnetic dipolar interactions plays a key role to significantly reduce the critical strength of the Dzyaloshinskii-Moriya interaction required to stabilize topological spin textures, such as antiferromagnetic merons, in synthetic antiferromagnets, making them a promising platform for next-generation spintronics applications.
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Affiliation(s)
- Mona Bhukta
- Institute of Physics, Johannes Gutenberg-University Mainz, 55099, Mainz, Germany
| | - Takaaki Dohi
- Institute of Physics, Johannes Gutenberg-University Mainz, 55099, Mainz, Germany.
- Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba, Sendai, 980-8577, Japan.
| | | | - Ricardo Zarzuela
- Institute of Physics, Johannes Gutenberg-University Mainz, 55099, Mainz, Germany
| | - Maria-Andromachi Syskaki
- Institute of Physics, Johannes Gutenberg-University Mainz, 55099, Mainz, Germany
- Singulus Technologies AG, Hanauer Landstrasse 107, 63796, Kahl am Main, Germany
| | - Michael Foerster
- ALBA Synchrotron Light Facility, 08290, Cerdanyola del Vallés, Barcelona, Spain
| | - Miguel Angel Niño
- ALBA Synchrotron Light Facility, 08290, Cerdanyola del Vallés, Barcelona, Spain
| | - Jairo Sinova
- Institute of Physics, Johannes Gutenberg-University Mainz, 55099, Mainz, Germany
| | - Robert Frömter
- Institute of Physics, Johannes Gutenberg-University Mainz, 55099, Mainz, Germany.
| | - Mathias Kläui
- Institute of Physics, Johannes Gutenberg-University Mainz, 55099, Mainz, Germany.
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6
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He B, Jin H, Zheng D, Liu Y, Li J, Hu Y, Wang Y, Zhang J, Peng Y, Wan C, Zhu T, Han X, Zhang S, Yu G. Creation of Room-Temperature Sub-100 nm Antiferromagnetic Skyrmions in an Antiferromagnet IrMn through Interfacial Exchange Coupling. NANO LETTERS 2024; 24:2196-2202. [PMID: 38329428 DOI: 10.1021/acs.nanolett.3c04221] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/09/2024]
Abstract
Antiferromagnetic (AFM) skyrmions are magnetic vortices composed of antiparallell-aligned neighboring spins. In stark contrast to conventional skyrmions based on ferromagnetic order, AFM skyrmions have vanished stray fields, higher response frequencies, and rectified translational motion driven by an external force. Therefore, AFM skyrmions promise highly efficient spintronics devices with high bit mobility and density. Nevertheless, the experimental realization of intrinsic AFM skyrmions remains elusive. Here, we show that AFM skyrmions can be nucleated via interfacial exchange coupling at the surface of a room-temperature AFM material, IrMn, exploiting the particular response from uncompensated moments to the thermal annealing and imprinting effects. Further systematic magnetic characterizations validate the existence of such an AFM order at the IrMn/CoFeB interfaces. Such AFM skyrmions have a typical size of 100 nm, which presents pronounced robustness against field and temperature. Our work opens new pathways for magnetic topological devices based on AFM skyrmions.
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Affiliation(s)
- Bin He
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Haonan Jin
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 200031, China
| | - Dongfeng Zheng
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Yizhou Liu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Jialiang Li
- Spallation Neutron Source Science Center, Dongguan 523803, China
| | - Yue Hu
- Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education, Lanzhou University, Lanzhou 730000, China
| | - Yuqiang Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Junwei Zhang
- Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education, Lanzhou University, Lanzhou 730000, China
| | - Yong Peng
- Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education, Lanzhou University, Lanzhou 730000, China
| | - Caihua Wan
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Tao Zhu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
- Spallation Neutron Source Science Center, Dongguan 523803, China
| | - Xiufeng Han
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Shilei Zhang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 200031, China
| | - Guoqiang Yu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
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7
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Belrhazi H, Fattouhi M, El Hafidi MY, El Hafidi M. Reconfigurable Skyrmion-Based Logic Gates: Versatile Design and Full-Scale Implementation. ACS APPLIED MATERIALS & INTERFACES 2024; 16:3703-3718. [PMID: 38214036 DOI: 10.1021/acsami.3c16542] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/13/2024]
Abstract
Herein, we investigate the behavior of skyrmions within a racetrack design incorporating voltage-controlled magnetic anisotropy (VCMA) gates. Our analysis encompassed multiple forces, including spin currents and anisotropy gradients induced by bias voltages. As a result, the efficient control of skyrmion dynamics was achieved across various VCMA gate configurations. Building upon these findings, we propose an efficient approach to reconfigurable skyrmion logic (RSL) in a thin antiferromagnetic (AFM) film through a versatile design. Our RSL harnesses the selective integration of VCMA, spin-polarized currents, and skyrmion-skyrmion (sky-sky) interactions to implement multiple logic gates, including AND, OR, XOR, NOT, NAND, XNOR, and NOR. The design brings a significant advantage with its simplified fabrication process, making the implementation of the RSL practical and accessible for various applications. Furthermore, the RSL enables seamless dynamic switching between logic gates, thereby enhancing its multifunctionality. Additionally, the strategic incorporation of sky-sky interactions and skyrmion-edge repulsion prominently facilitates the realization of complex gates, such as NAND, XNOR, and NOR gates, that typically require intricate design efforts. Hence, this streamlined integration of RSL, coupled with its adaptability to changing computational needs, underscores its potential as a practical solution for implementing high-functionality skyrmion-based logic gates.
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Affiliation(s)
- Hamza Belrhazi
- Condensed Matter Physics Laboratory, Department of Physics, Faculty of Science Ben M'sik, Hassan II University of Casablanca, D. El Harty Av., B.P 7955, 20165 Casablanca, Morocco
| | - Mouad Fattouhi
- Department of Applied Physics, University of Salamanca, 37008 Salamanca, Spain
| | - M Youssef El Hafidi
- Condensed Matter Physics Laboratory, Department of Physics, Faculty of Science Ben M'sik, Hassan II University of Casablanca, D. El Harty Av., B.P 7955, 20165 Casablanca, Morocco
| | - Mohamed El Hafidi
- Condensed Matter Physics Laboratory, Department of Physics, Faculty of Science Ben M'sik, Hassan II University of Casablanca, D. El Harty Av., B.P 7955, 20165 Casablanca, Morocco
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8
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Darwin E, Tomasello R, Shepley PM, Satchell N, Carpentieri M, Finocchio G, Hickey BJ. Antiferromagnetic interlayer exchange coupled Co 68B 32/Ir/Pt multilayers. Sci Rep 2024; 14:95. [PMID: 38168577 PMCID: PMC10761723 DOI: 10.1038/s41598-023-49976-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/21/2023] [Accepted: 12/14/2023] [Indexed: 01/05/2024] Open
Abstract
Synthetic antiferromagnetic structures can exhibit the advantages of high velocity similarly to antiferromagnets with the additional benefit of being imaged and read-out through techniques applied to ferromagnets. Here, we explore the potential and limits of synthetic antiferromagnets to uncover ways to harness their valuable properties for applications. Two synthetic antiferromagnetic systems have been engineered and systematically investigated to provide an informed basis for creating devices with maximum potential for data storage, logic devices, and skyrmion racetrack memories. The two systems considered are (system 1) CoB/Ir/Pt of N repetitions with Ir inducing the negative coupling between the ferromagnetic layers and (system 2) two ferromagnetically coupled multilayers of CoB/Ir/Pt, coupled together antiferromagnetically with an Ir layer. From the hysteresis, it is found that system 1 shows stable antiferromagnetic interlayer exchange coupling between each magnetic layer up to N = 7. Using Kerr imaging, the two ferromagnetic multilayers in system 2 are shown to undergo separate maze-like switches during hysteresis. Both systems are also studied as a function of temperature and show different behaviors. Micromagnetic simulations predict that in both systems the skyrmion Hall angle is suppressed with the skyrmion velocity five times higher in system 1 than system 2.
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Affiliation(s)
- Emily Darwin
- School of Physics and Astronomy, University of Leeds, Leeds, LS2 9JT, UK
- Department of Electrical and Information Engineering, Politecnico Di Bari, Via E. Orabona 4, 70125, Bari, Italy
| | - Riccardo Tomasello
- Department of Electrical and Information Engineering, Politecnico Di Bari, Via E. Orabona 4, 70125, Bari, Italy
| | - Philippa M Shepley
- School of Physics and Astronomy, University of Leeds, Leeds, LS2 9JT, UK
| | - Nathan Satchell
- School of Physics and Astronomy, University of Leeds, Leeds, LS2 9JT, UK
- Department of Physics, Texas State University, San Marcos, TX, 78666, USA
| | - Mario Carpentieri
- Department of Electrical and Information Engineering, Politecnico Di Bari, Via E. Orabona 4, 70125, Bari, Italy
| | - Giovanni Finocchio
- Department of Mathematical and Computer Sciences, Physical Sciences and Earth Sciences, University of Messina, 98166, Messina, Italy.
| | - B J Hickey
- School of Physics and Astronomy, University of Leeds, Leeds, LS2 9JT, UK.
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9
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Raj RK, Bindal N, Kaushik BK. Skyrmion motion under temperature gradient and application in logic devices. NANOTECHNOLOGY 2023; 35:075703. [PMID: 38014695 DOI: 10.1088/1361-6528/acfd33] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/21/2023] [Accepted: 09/25/2023] [Indexed: 11/29/2023]
Abstract
Under the presence of temperature gradient (TG) on a nanotrack, it is necessary to investigate the skyrmion dynamics in various magnetic systems under the combined effect of forces due to magnonic spin transfer torque(μSTT),thermal STT (τSTT), entropic difference(dS),as well as thermal induced dipolar field (DF). Hence, in this work, the dynamics of skyrmions in ferromagnets (FM), synthetic antiferromagnets (SAF), and antiferromagnets (AFM) have been studied under different TGs and damping constants (αG). It is observed thatαGplays a major role in deciding the direction of skyrmion motion either towards the hotter or colder side in different magnetic structures. Later, FM skyrmion based logic device is proposed that consists of a cross-coupled nanotrack, where the skyrmions on horizontal and vertical nanotrack are controlled by exploiting TG and electrical STT (eSTT), respectively by taking the advantages of thermal induced skyrmion Hall effect (SkHE). The proposed device performs AND and OR logic functionalities simultaneously, when the applied current density is2×1011Am-2.Moreover, the proposed device is also able to exhibit the half adder functionality by tuning the applied current density to3×1011Am-2.The total energy consumption for AND and OR logic operation and half adder are 33.63 fJ and 25.06 fJ, respectively. This paves the way for the development of energy-efficient logic devices with ultra-high storage density.
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Affiliation(s)
- Ravish Kumar Raj
- Department of Electronics and Communication Engineering, Indian Institute of Technology, Roorkee 247667, India
| | - Namita Bindal
- Department of Electronics and Communication Engineering, Indian Institute of Technology, Roorkee 247667, India
| | - Brajesh Kumar Kaushik
- Department of Electronics and Communication Engineering, Indian Institute of Technology, Roorkee 247667, India
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10
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He B, Tomasello R, Luo X, Zhang R, Nie Z, Carpentieri M, Han X, Finocchio G, Yu G. All-Electrical 9-Bit Skyrmion-Based Racetrack Memory Designed with Laser Irradiation. NANO LETTERS 2023; 23:9482-9490. [PMID: 37818857 DOI: 10.1021/acs.nanolett.3c02978] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/13/2023]
Abstract
Racetrack memories with magnetic skyrmions have recently been proposed as a promising storage technology. To be appealing, several challenges must still be faced for the deterministic generation of skyrmions, their high-fidelity transfer, and accurate reading. Here, we realize the first proof-of-concept of a 9-bit skyrmion racetrack memory with all-electrical controllable functionalities implemented in the same device. The key ingredient is the generation of a tailored nonuniform distribution of magnetic anisotropy via laser irradiation in order to (i) create a well-defined skyrmion nucleation center, (ii) define the memory cells hosting the information coded as the presence/absence of skyrmions, and (iii) improve the signal-to-noise ratio of anomalous Hall resistance measurements. This work introduces a strategy to unify previous findings and predictions for the development of a generation of racetrack memories with robust control of skyrmion nucleation and position, as well as effective skyrmion electrical detection.
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Affiliation(s)
- Bin He
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Riccardo Tomasello
- Department of Electrical and Information Engineering, Politecnico of Bari, Bari 70125, Italy
| | - Xuming Luo
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Ran Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Zhuyang Nie
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Mario Carpentieri
- Department of Electrical and Information Engineering, Politecnico of Bari, Bari 70125, Italy
| | - Xiufeng Han
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, People's Republic of China
| | - Giovanni Finocchio
- Department of Mathematical and Computer Sciences, Physical Sciences and Earth Sciences, University of Messina, Messina 98166, Italy
| | - Guoqiang Yu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, People's Republic of China
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11
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Aldarawsheh A, Sallermann M, Abusaa M, Lounis S. Intrinsic Néel Antiferromagnetic Multimeronic Spin Textures in Ultrathin Films. J Phys Chem Lett 2023; 14:8970-8978. [PMID: 37773009 PMCID: PMC10577774 DOI: 10.1021/acs.jpclett.3c02419] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/29/2023] [Accepted: 09/27/2023] [Indexed: 09/30/2023]
Abstract
Topological antiferromagnetism is a vibrant and captivating research field, generating considerable enthusiasm with the aim of identifying topologically protected magnetic states of key importance in the hybrid realm of topology, magnetism, and spintronics. While topological antiferromagnetic (AFM) solitons bear various advantages with respect to their ferromagnetic cousins, their observation is scarce. Utilizing first-principles simulations, here we predict new chiral particles in the realm of AFM topological magnetism, exchange-frustrated multimeronic spin textures hosted by a Néel magnetic state, arising universally in single Mn layers directly grown on an Ir(111) surface or interfaced with Pd-based films. These nanoscale topological structures are intrinsic; i.e. they form in a single AFM material, can carry distinct topological charges, and can combine in various multimeronic sequences with enhanced stability against external magnetic fields. We envision the frustrated Néel AFM multimerons as exciting highly sought after AFM solitons having the potential to be utilized in novel spintronic devices hinging on nonsynthetic AFM quantum materials, further advancing the frontiers of nanotechnology and nanophysics.
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Affiliation(s)
- Amal Aldarawsheh
- Peter
Grünberg Institute and Institute for Advanced Simulation, Forschungszentrum Jülich and JARA, D-52425 Jülich, Germany
- Faculty
of Physics, University of Duisburg-Essen
and CENIDE, 47053 Duisburg, Germany
| | - Moritz Sallermann
- Peter
Grünberg Institute and Institute for Advanced Simulation, Forschungszentrum Jülich and JARA, D-52425 Jülich, Germany
- RWTH
Aachen University, 52056 Aachen, Germany
- Science
Institute and Faculty of Physical Sciences, University of Iceland, VR-III, 107 Reykjavík, Iceland
| | - Muayad Abusaa
- Department
of Physics, Arab American University, 240 Jenin, Palestine
| | - Samir Lounis
- Peter
Grünberg Institute and Institute for Advanced Simulation, Forschungszentrum Jülich and JARA, D-52425 Jülich, Germany
- Faculty
of Physics, University of Duisburg-Essen
and CENIDE, 47053 Duisburg, Germany
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12
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Yagan R, Cheghabouri AM, Onbasli MC. Stabilization and adiabatic control of antiferromagnetically coupled skyrmions without the topological Hall effect. NANOSCALE ADVANCES 2023; 5:4470-4479. [PMID: 37638152 PMCID: PMC10448311 DOI: 10.1039/d3na00236e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/13/2023] [Accepted: 07/26/2023] [Indexed: 08/29/2023]
Abstract
Synthetic antiferromagnetically coupled (SAF) multilayers provide different physics of stabilizing skyrmions while eliminating the topological Hall effect (THE), enabling efficient and stable control. The effects of material parameters, external current drive, and a magnetic field on the skyrmion equilibrium and propagation characteristics are largely unresolved. Here, we present a computational and theoretical demonstration of the large window of material parameters that stabilize SAF skyrmions determined by saturation magnetization, uniaxial anisotropy, and Dzyaloshinskii-Moriya interaction. Current-driven SAF skyrmion velocities reach ∼200 m s-1 without the THE. The SAF velocities are about 3-10 times greater than the typical ferromagnetic skyrmion velocities. The current densities needed for driving SAF skyrmions could be reduced to 108 A m-2, while 1011 A m-2 or above is needed for ferromagnetic skyrmions. By reducing the SAF skyrmion drive current by 3 orders, Joule heating is reduced by 6 orders of magnitude. These results pave the way for new SAF interfaces with improved equilibrium, dynamics, and power savings in THE-free skyrmionics.
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Affiliation(s)
- Rawana Yagan
- Department of Electrical and Electronics Engineering, Koç University Sarıyer Istanbul 34450 Turkey
| | | | - Mehmet C Onbasli
- Department of Electrical and Electronics Engineering, Koç University Sarıyer Istanbul 34450 Turkey
- Department of Physics, Koç University Sarıyer Istanbul 34450 Turkey
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13
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Xu T, Zhang Y, Wang Z, Bai H, Song C, Liu J, Zhou Y, Je SG, N'Diaye AT, Im MY, Yu R, Chen Z, Jiang W. Systematic Control of Ferrimagnetic Skyrmions via Composition Modulation in Pt/Fe 1-xTb x/Ta Multilayers. ACS NANO 2023; 17:7920-7928. [PMID: 37010987 DOI: 10.1021/acsnano.3c02006] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Magnetic skyrmions are topological spin textures that can be used as memory and logic components for advancing the next generation spintronics. In this regard, control of nanoscale skyrmions, including their sizes and densities, is of particular importance for enhancing the storage capacity of skyrmionic devices. Here, we propose a viable route for engineering ferrimagnetic skyrmions via tuning the magnetic properties of the involved ferrimagnets Fe1-xTbx. Via tuning the composition of Fe1-xTbx that alters the magnetic anisotropy and the saturation magnetization, the size of the ferrimagnetic skyrmion (ds) and the average density (ηs) can be effectively tailored in [Pt/Fe1-xTbx/Ta]10 multilayers. In particular, a stabilization of sub-50 nm skyrmions with a high density is demonstrated at room temperature. Our work provides an effective approach for designing ferrimagnetic skyrmions with the desired size and density, which could be useful for enabling high-density ferrimagnetic skyrmionics.
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Affiliation(s)
- Teng Xu
- State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Tsinghua University, Beijing 100084, China
| | - Yuxuan Zhang
- School of Materials Science and Engineering, The State Key Laboratory of New Ceramics and Fine Processing, MOE Key Laboratory of Advanced Materials, Tsinghua University, Beijing 100084, China
| | - Zidong Wang
- State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Tsinghua University, Beijing 100084, China
- School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen, Guangdong 518172, China
| | - Hao Bai
- State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Tsinghua University, Beijing 100084, China
| | - Chengkun Song
- State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Tsinghua University, Beijing 100084, China
| | - Jiahao Liu
- State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Tsinghua University, Beijing 100084, China
| | - Yan Zhou
- School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen, Guangdong 518172, China
| | - Soong-Geun Je
- Lawrence Berkeley National Laboratory, Cyclotron Road, Berkeley, California 94720, United States
| | - Alpha T N'Diaye
- Lawrence Berkeley National Laboratory, Cyclotron Road, Berkeley, California 94720, United States
| | - Mi-Young Im
- Lawrence Berkeley National Laboratory, Cyclotron Road, Berkeley, California 94720, United States
| | - Rong Yu
- School of Materials Science and Engineering, The State Key Laboratory of New Ceramics and Fine Processing, MOE Key Laboratory of Advanced Materials, Tsinghua University, Beijing 100084, China
| | - Zhen Chen
- School of Materials Science and Engineering, The State Key Laboratory of New Ceramics and Fine Processing, MOE Key Laboratory of Advanced Materials, Tsinghua University, Beijing 100084, China
| | - Wanjun Jiang
- State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Tsinghua University, Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100084, China
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14
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Zhang H, Li F, Song H, Liu Y, Huang L, Zhao S, Xiong Z, Wang Z, Dong Y, Liu H. Random Silica-Glass Microlens Arrays Based on the Molding Technology of Photocurable Nanocomposites. ACS APPLIED MATERIALS & INTERFACES 2023; 15:19230-19240. [PMID: 37039331 DOI: 10.1021/acsami.3c02040] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Random microlens arrays (rMLAs) have been widely applied as a beam-shaping component within an optical system. Silica glass is undoubtedly the best choice for rMLAs because of its wide range of spectra with high transmission and high damage threshold. Yet, machining silica glass with user-defined shapes is still challenging. In this work, novel design and fabrication methods of random silica-glass microlens arrays (rSMLAs) are proposed and a detailed investigation of this technology is presented. Based on the molding technology, the fabricated rSMLAs with tunable divergent angles demonstrate superior physical properties with 1.81 nm roughness, 1074.33 HV hardness, and excellent thermal stability at 1250 °C for 3 h. Meanwhile, their characterized optical performance shows a high transmission of over 90% in the ultraviolet spectrum. The fabricated two types of rSMLAs exhibit excellent effects of beam homogenization with surprising energy utilization (more than 90%) and light spot uniformity (more than 80%). This innovative process paves a new route for fabricating rMLAs on solid silica glass and breaking down the barrier of rMLAs to broader applications.
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Affiliation(s)
- Han Zhang
- Center for Advanced Optoelectronic Functional Materials Research, and Key Laboratory for UV Emitting Materials and Technology of Ministry of Education, National Demonstration Center for Experimental Physics Education, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China
| | - Feng Li
- Center for Advanced Optoelectronic Functional Materials Research, and Key Laboratory for UV Emitting Materials and Technology of Ministry of Education, National Demonstration Center for Experimental Physics Education, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China
| | - Huiying Song
- Center for Advanced Optoelectronic Functional Materials Research, and Key Laboratory for UV Emitting Materials and Technology of Ministry of Education, National Demonstration Center for Experimental Physics Education, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China
| | - Yuqing Liu
- Center for Advanced Optoelectronic Functional Materials Research, and Key Laboratory for UV Emitting Materials and Technology of Ministry of Education, National Demonstration Center for Experimental Physics Education, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China
| | - Long Huang
- Center for Advanced Optoelectronic Functional Materials Research, and Key Laboratory for UV Emitting Materials and Technology of Ministry of Education, National Demonstration Center for Experimental Physics Education, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China
| | - Shaoqing Zhao
- Center for Advanced Optoelectronic Functional Materials Research, and Key Laboratory for UV Emitting Materials and Technology of Ministry of Education, National Demonstration Center for Experimental Physics Education, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China
| | - Zheng Xiong
- Corning Research & Development Corporation, 1 Riverfront Plaza, Corning, New York 14831, United States
| | - Zhengxiao Wang
- High School Attached to Northeast Normal University, Changchun 130024, China
| | - Yongjun Dong
- Center for Advanced Optoelectronic Functional Materials Research, and Key Laboratory for UV Emitting Materials and Technology of Ministry of Education, National Demonstration Center for Experimental Physics Education, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China
| | - Hua Liu
- Center for Advanced Optoelectronic Functional Materials Research, and Key Laboratory for UV Emitting Materials and Technology of Ministry of Education, National Demonstration Center for Experimental Physics Education, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China
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15
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Olleros-Rodríguez P, Strungaru M, Ruta S, Gavriloaea PI, Gudín A, Perna P, Chantrell R, Chubykalo-Fesenko O. Non-equilibrium heating path for the laser-induced nucleation of metastable skyrmion lattices. NANOSCALE 2022; 14:15701-15712. [PMID: 36124690 DOI: 10.1039/d2nr03903f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Understanding formation of metastable phases by rapid energy pumping and quenching has been intriguing scientists for a long time. This issue is crucial for technologically relevant systems such as magnetic skyrmions which are frequently metastable at zero field. Using Atomistic Spin Dynamics simulations, we show the possibility of creating metastable skyrmion lattices in cobalt-based trilayers by femtosecond laser heating. Similar to the formation of supercooled ice droplets in the gas phase, high temperature ultrafast excitation creates magnon drops and their fast relaxation leads to acquisition and quenching of the skyrmion topological protection. The interplay between different processes corresponds to a specific excitation window which can be additionally controlled by external fields. The results are contrasted with longer-scale heating leading to a phase transition to the stable states. Our results provide insight into the dynamics of the highly non-equilibrium pathway for spin excitations and pave additional routes for skyrmion-based information technologies.
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Affiliation(s)
| | - Mara Strungaru
- Department of Physics, University of York, YO10 5DD, York, UK
| | - Sergiu Ruta
- Department of Physics, University of York, YO10 5DD, York, UK
| | - Paul-Iulian Gavriloaea
- Department of Physics, University of York, YO10 5DD, York, UK
- Materials Science Institute ICMM-CSIC, Campus de Cantoblanco, 28049, Madrid, Spain.
| | - Adrián Gudín
- IMDEA Nanoscience Institute, Campus de Cantoblanco, 28049, Madrid, Spain.
| | - Paolo Perna
- IMDEA Nanoscience Institute, Campus de Cantoblanco, 28049, Madrid, Spain.
| | - Roy Chantrell
- Department of Physics, University of York, YO10 5DD, York, UK
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