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Hou S, Fang S, Fan Y, Li Y, Ma Z, Li J. MCML-BF: A Metal-Column Embedded Microstrip Line Transmission Structure with Bias Feeders for Beam-Scanning Leakage Antenna Design. SENSORS (BASEL, SWITZERLAND) 2024; 24:3467. [PMID: 38894261 PMCID: PMC11174548 DOI: 10.3390/s24113467] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/02/2024] [Revised: 05/13/2024] [Accepted: 05/26/2024] [Indexed: 06/21/2024]
Abstract
This article proposes a novel fixed-frequency beam scanning leakage antenna based on a liquid crystal metamaterial (LCM) and adopting a metal column embedded microstrip line (MCML) transmission structure. Based on the microstrip line (ML) transmission structure, it was observed that by adding two rows of metal columns in the dielectric substrate, electromagnetic waves can be more effectively transmitted to reduce dissipation, and attenuation loss can be lowered to improve energy radiation efficiency. This antenna couples TEM mode electromagnetic waves into free space by periodically arranging 72 complementary split ring resonators (CSRRs). The LC layer is encapsulated in the transmission medium between the ML and the metal grounding plate. The simulation results show that the antenna can achieve a 106° continuous beam turning from reverse -52° to forward 54° at a frequency of 38 GHz with the holographic principle. In practical applications, beam scanning is achieved by applying a DC bias voltage to the LC layer to adjust the LC dielectric constant. We designed a sector-blocking bias feeder structure to minimize the impact of RF signals on the DC source and avoid the effect of DC bias on antenna radiation. Further comparative experiments revealed that the bias feeder can significantly diminish the influence between the two sources, thereby reducing the impact of bias voltage introduced by LC layer feeding on antenna performance. Compared with existing approaches, the antenna array simultaneously combines the advantages of high frequency band, high gain, wide beam scanning range, and low loss.
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Affiliation(s)
- Shunhu Hou
- Graduate School, Space Engineering University, Beijing 101416, China; (S.H.); (Y.L.); (Z.M.)
| | - Shengliang Fang
- School of Space Information, Space Engineering University, Beijing 101416, China; (Y.F.); (J.L.)
| | - Youchen Fan
- School of Space Information, Space Engineering University, Beijing 101416, China; (Y.F.); (J.L.)
| | - Yuhai Li
- Graduate School, Space Engineering University, Beijing 101416, China; (S.H.); (Y.L.); (Z.M.)
| | - Zhao Ma
- Graduate School, Space Engineering University, Beijing 101416, China; (S.H.); (Y.L.); (Z.M.)
| | - Jinming Li
- School of Space Information, Space Engineering University, Beijing 101416, China; (Y.F.); (J.L.)
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Abbas A, Hussain N, Sufian MA, Awan WA, Lee J, Kim N. An Electronically Reconfigurable Highly Selective Stop-Band Ultra-Wideband Antenna Applying Electromagnetic Bandgaps and Positive-Intrinsic-Negative Diodes. MICROMACHINES 2024; 15:638. [PMID: 38793211 PMCID: PMC11123323 DOI: 10.3390/mi15050638] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/11/2024] [Revised: 04/30/2024] [Accepted: 05/08/2024] [Indexed: 05/26/2024]
Abstract
In this article, an ultra-wideband (UWB) antenna featuring two reconfigurable quasi-perfect stop bands at WLAN (5.25-5.75 GHz) and lower 5G (3.4-3.8 GHz) utilizing electromagnetic bandgaps (EBGs) and positive-intrinsic-negative (P-I-N) diodes is proposed. A pair of EBG structures are applied to generate sharp notch bands in the targeted frequency spectrum. Each EBG creates a traditional notch, while two regular notches are combined to make a quasi-perfect, sharp, notch band. Four P-I-N diodes are engraved into the EBG structures to enable notch band reconfigurability. By switching the operational condition of the four diodes, the UWB antenna can dynamically adjust its notching characteristics to enhance its adaptability to various communication standards and applications. The antenna can be reconfigured as a UWB (3-11.6 GHz) without any notch band, a UWB with a single sharp notch (either at WLAN or 5G), or a UWB with two quasi-perfect notch bands. Moreover, the antenna's notch bands can also be switched from a traditional notch to a quasi-perfect notch and vice versa. To confirm the validity of the simulated outcomes, the proposed reconfigurable UWB antenna is fabricated and measured. The experimental findings are aligned closely with simulation results, and the antenna offers notch band reconfigurability. The antenna shows a consistently favorable radiation pattern and gain. The dimension of the presented antenna is 20 × 27 × 1.52 mm3 (0.45 λc × 0.33 λc × 0.025 λc, where λc is the wavelength in free space).
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Affiliation(s)
- Anees Abbas
- Department of Information and Communication, Chungbuk National University, Cheongju 28644, Republic of Korea; (A.A.); (M.A.S.); (W.A.A.); (J.L.)
| | - Niamat Hussain
- Department of Intelligent Mechatronics Engineering, Sejong University, Seoul 05006, Republic of Korea;
| | - Md. Abu Sufian
- Department of Information and Communication, Chungbuk National University, Cheongju 28644, Republic of Korea; (A.A.); (M.A.S.); (W.A.A.); (J.L.)
| | - Wahaj Abbas Awan
- Department of Information and Communication, Chungbuk National University, Cheongju 28644, Republic of Korea; (A.A.); (M.A.S.); (W.A.A.); (J.L.)
| | - Jaemin Lee
- Department of Information and Communication, Chungbuk National University, Cheongju 28644, Republic of Korea; (A.A.); (M.A.S.); (W.A.A.); (J.L.)
| | - Nam Kim
- Department of Information and Communication, Chungbuk National University, Cheongju 28644, Republic of Korea; (A.A.); (M.A.S.); (W.A.A.); (J.L.)
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Takeshita H, Fathnan AA, Nita D, Nagata A, Sugiura S, Wakatsuchi H. Frequency-hopping wave engineering with metasurfaces. Nat Commun 2024; 15:196. [PMID: 38172183 PMCID: PMC10764809 DOI: 10.1038/s41467-023-44627-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/27/2023] [Accepted: 12/20/2023] [Indexed: 01/05/2024] Open
Abstract
Wave phenomena can be artificially engineered by scattering from metasurfaces, which aids in the design of radio-frequency and optical devices for wireless communication, sensing, imaging, wireless power transfer and bio/medical applications. Scattering responses vary with changing frequency; conversely, they remain unchanged at a constant frequency, which has been a long-standing limitation in the design of devices leveraging wave scattering phenomena. Here, we present metasurfaces that can scatter incident waves according to two variables-the frequency and pulse width-in multiple bands. Significantly, these scattering profiles are characterized by how the frequencies are used in different time windows due to transient circuits. In particular, by using more than one frequency with coupled transient circuits, we demonstrate variable scattering profiles in response to unique frequency sequences, which can break a conventional linear frequency concept and markedly increase the available frequency channels in accordance with a factorial number of frequencies used. Our proposed concept, which is analogous to frequency hopping in wireless communication, advances wave engineering in electromagnetics and related fields.
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Affiliation(s)
- Hiroki Takeshita
- Department of Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa, Nagoya, Aichi, 466-8555, Japan
| | - Ashif Aminulloh Fathnan
- Department of Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa, Nagoya, Aichi, 466-8555, Japan
- Research Center for Telecommunication (PRT), National Research and Innovation Agency (BRIN), Bandung, 40135, Indonesia
| | - Daisuke Nita
- Department of Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa, Nagoya, Aichi, 466-8555, Japan
| | - Atsuko Nagata
- Department of Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa, Nagoya, Aichi, 466-8555, Japan
| | - Shinya Sugiura
- Institute of Industrial Science, The University of Tokyo, Meguro, Tokyo, 153-8505, Japan
| | - Hiroki Wakatsuchi
- Department of Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa, Nagoya, Aichi, 466-8555, Japan.
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Wang B, Zhao L, Jia X, Yang P, Yu S. Enhanced Tunability Achieving at Low Permittivity and Electric Field in (Ba 0.91Ca 0.09)(Sn xZr 0.2-xTi 0.8)O 3-2 mol% CuO-1 mol% Li 2CO 3 Ceramics. MATERIALS (BASEL, SWITZERLAND) 2023; 16:5226. [PMID: 37569928 PMCID: PMC10419635 DOI: 10.3390/ma16155226] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/04/2023] [Revised: 07/18/2023] [Accepted: 07/21/2023] [Indexed: 08/13/2023]
Abstract
Ferroelectric varactors should have high tunability at low permittivity and a working electric field to obtain better impedance matching and stable tunability. In this work, (Ba0.91Ca0.09)(SnxZr0.2-xTi0.8)O3-2 mol% CuO-1 mol% Li2CO3 (abbreviated as BCSZT100x, x = 0.05, 0.10, 0.15 and 0.20, respectively) are prepared to achieve high tunability at low permittivity and a working electric field. The tunable mechanisms are investigated based on crystal structure, micro-morphology and the permittivity-temperature spectrum. The results show that the shrink of oxygen octahedron and weaker interaction force between Sn4+ and O2- make BCSZT5 ceramic have a higher tunability value of 26.55% at low permittivity (1913) and a working electric field (7.3 kV/cm). The tunability value of BCSZT5 ceramic increases by 58%, while its permittivity decreases by 25%, compared with x = 0. Those advantages make BCSZT5 ceramic have substantial application prospects in varactors.
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Affiliation(s)
- Bo Wang
- Department of Electrical Engineering and Automation, Luoyang Institute of Science and Technology, Luoyang 471023, China
| | - Le Zhao
- School of Microelectronics, Tianjin University, Tianjin 300072, China
| | - Xiuhuai Jia
- School of Microelectronics, Tianjin University, Tianjin 300072, China
| | - Pan Yang
- Department of Electrical Engineering and Automation, Luoyang Institute of Science and Technology, Luoyang 471023, China
| | - Shihui Yu
- Department of Electrical Engineering and Automation, Luoyang Institute of Science and Technology, Luoyang 471023, China
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Naqvi AH, Pham DA, Shah SIH, Lim S. 1-Bit Transmission-Type Digital Programmable Coding Metasurface with Multi-Functional Beam-Shaping Capability for Ka-Band Applications. MICROMACHINES 2023; 14:1250. [PMID: 37374835 PMCID: PMC10303042 DOI: 10.3390/mi14061250] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/15/2023] [Revised: 06/12/2023] [Accepted: 06/12/2023] [Indexed: 06/29/2023]
Abstract
Digital programmable coding metasurfaces (DPCMs) have recently attracted enormous attention and have been broadly applied, owing to their ability to manipulate electromagnetic (EM) wave behaviours and programmable multi-functionality. Recent DPCM works are divided into reflection and transmission types (R-DPCM and T-DPCM, respectively); however, there are only a few reported T-DPCM works in the millimetre-wave spectrum, owing to the difficulty of realising the large-phase controllable range while maintaining low transmission losses with electronic control components. Consequently, most millimetre-wave T-DPCMs are demonstrated only with limited functions in a single design. Additionally, all these designs use high-cost substrate materials that constrain practical applicability, owing to cost-ineffectiveness. Herein, we propose a 1-bit T-DPCM that simultaneously performs three dynamic beam-shaping functions with a single structure for millimetre-wave applications. The proposed structure is completely constructed using low-cost FR-4 materials, and operation of each meta-cell is manipulated using PIN-diodes, thus driving the achievement of multiple effective dynamic functionalities including dual-beam scanning, multi-beam shaping, and orbital-angular-momentum-mode generation. It should be noted that there are no reported millimetre-wave T-DPCMs demonstrating multi-function design, thus showing a gap in the recent literature of millimetre-wave T-DPCMs. Moreover, cost-effectiveness can be significantly enhanced, owing to the construction of the proposed T-DPCM using only low-cost material.
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Affiliation(s)
| | | | - Syed Imran Hussain Shah
- School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, Republic of Korea; (A.H.N.); (D.A.P.)
| | - Sungjoon Lim
- School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, Republic of Korea; (A.H.N.); (D.A.P.)
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Imai S, Homma H, Takimoto K, Tanikawa M, Nakamura J, Kaneko M, Osaki Y, Niitsu K, Cheng Y, Fathnan AA, Wakatsuchi H. Design and analysis for the SPICE parameters of waveform-selective metasurfaces varying with the incident pulse width at a constant oscillation frequency. Sci Rep 2023; 13:7202. [PMID: 37138046 PMCID: PMC10156664 DOI: 10.1038/s41598-023-34112-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/26/2022] [Accepted: 04/24/2023] [Indexed: 05/05/2023] Open
Abstract
In this study, we numerically demonstrate how the response of recently reported circuit-based metasurfaces is characterized by their circuit parameters. These metasurfaces, which include a set of four diodes as a full wave rectifier, are capable of sensing different waves even at the same frequency in response to the incident waveform, or more specifically the pulse width. This study reveals the relationship between the electromagnetic response of such waveform-selective metasurfaces and the SPICE parameters of the diodes used. In particular, we draw conclusions about how the SPICE parameters are related to (1) the high-frequency operation, (2) input power requirement and (3) dynamic range of waveform-selective metasurfaces with supporting simulation results. First, we show that reducing a parasitic capacitive component of the diodes is important for realization of the waveform-selective metasurfaces in a higher frequency regime. Second, we report that the operating power level is closely related to the saturation current and the breakdown voltage of the diodes. Moreover, the operating power range is found to be broadened by introducing an additional resistor into the inside of the diode bridge. Our study is expected to provide design guidelines for circuit-based waveform-selective metasurfaces to select/fabricate optimal diodes and enhance the waveform-selective performance at the target frequency and power level. Our results are usefully exploited to ensure the selectivity based on the pulse duration of the incident wave in a range of potential applications including electromagnetic interference, wireless power transfer, antenna design, wireless communications, and sensing.
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Affiliation(s)
- Shiori Imai
- Department of Electrical and Mechanical Engineering, Faculty of Engineering, Nagoya Institute of Technology, Nagoya, Aichi, 466-8555, Japan
| | - Haruki Homma
- Department of Engineering, Graduate School of Engineering, Nagoya Institute of Technology, Nagoya, Aichi, 466-8555, Japan
| | - Kairi Takimoto
- Department of Engineering, Graduate School of Engineering, Nagoya Institute of Technology, Nagoya, Aichi, 466-8555, Japan
| | - Mizuki Tanikawa
- Department of Engineering, Graduate School of Engineering, Nagoya Institute of Technology, Nagoya, Aichi, 466-8555, Japan
| | - Jin Nakamura
- Kyoto Engineering Center, Meitec Corporation, Kyoto, 600-8216, Japan
| | - Masaya Kaneko
- Kyoto Engineering Center, Meitec Corporation, Kyoto, 600-8216, Japan
| | - Yuya Osaki
- Kyoto Engineering Center, Meitec Corporation, Kyoto, 600-8216, Japan
| | - Kiichi Niitsu
- Graduate School of Informatics, Kyoto University, Kyoto, 606-8501, Japan
| | - Yongzhi Cheng
- School of Information Science and Engineering, Wuhan University of Science and Technology, Wuhan, 430081, China
| | - Ashif Aminulloh Fathnan
- Department of Engineering, Graduate School of Engineering, Nagoya Institute of Technology, Nagoya, Aichi, 466-8555, Japan
| | - Hiroki Wakatsuchi
- Department of Engineering, Graduate School of Engineering, Nagoya Institute of Technology, Nagoya, Aichi, 466-8555, Japan.
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