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Sun F, Wu M, Ren J, Wang X, Yang H, Zhang X, Chen W, Zheng Y. Reversible Mechanical Switching of Ferroelastic Stripe Domains in Multiferroic Thin Films. ACS APPLIED MATERIALS & INTERFACES 2024; 16:32425-32433. [PMID: 38865279 DOI: 10.1021/acsami.4c04405] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2024]
Abstract
The application potential of ferroelectric thin films largely relies on the controllability of their domain structure. Among the various proposed strategies, mechanical switching is being considered as a potential alternative to replace electrical switching for control of the domain structure of ferroelectric thin films via, e.g., the flexoelectric effect. So far, studies on mechanical switching are confined to out-of-plane polarization switching in ferroelectric thin films, which are in pristine or prepoled single-domain states. In this work, we report reversible in-plane mechanical switching of the monoclinic phase (MC phase) stripe domains in BiFeO3 thin films can be realized by scanning tip force. Via controlling the fast scan direction of the scanning probe microscopy tip and the magnitude of the tip force, the effective trailing field induced by the local tip force can be rotated to consequently switch the net in-plane polarization of the two-variant stripe domain patterns by either 90° or 180°. Moreover, the monoclinic to rhombohedral (MC-R) phase transition occurs during mechanical switching with the distribution of R-phase domains dependent on the switching paths. These results extend our current understanding of the mechanical switching behavior in ferroelectric thin films and should be instructive for their future applications.
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Affiliation(s)
- Fei Sun
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Mengjun Wu
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- School of Materials, Shenzhen Campus of Sun Yat-sen University, Shenzhen 518107, China
| | - Jianhua Ren
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Xintong Wang
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Hui Yang
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Xiaoyue Zhang
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Weijin Chen
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- School of Materials, Shenzhen Campus of Sun Yat-sen University, Shenzhen 518107, China
| | - Yue Zheng
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
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Zheng S, Du F, Zheng L, Han D, Li Q, Shi J, Chen J, Shi X, Huang H, Luo Y, Yang Y, O'Reilly P, Wei L, de Souza N, Hong L, Qian X. Colossal electrocaloric effect in an interface-augmented ferroelectric polymer. Science 2023; 382:1020-1026. [PMID: 38033074 DOI: 10.1126/science.adi7812] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/18/2023] [Accepted: 10/30/2023] [Indexed: 12/02/2023]
Abstract
The electrocaloric effect demands the maximized degree of freedom (DOF) of polar domains and the lowest energy barrier to facilitate the transition of polarization. However, optimization of the DOF and energy barrier-including domain size, crystallinity, multiconformation coexistence, polar correlation, and other factors in bulk ferroelectrics-has reached a limit. We used organic crystal dimethylhexynediol (DMHD) as a three-dimensional sacrificial master to assemble polar conformations at the heterogeneous interface in poly(vinylidene fluoride)-based terpolymer. DMHD was evaporated, and the epitaxy-like process induced an ultrafinely distributed, multiconformation-coexisting polar interface exhibiting a giant conformational entropy. Under a low electric field, the interface-augmented terpolymer had a high entropy change of 100 J/(kg·K). This interface polarization strategy is generally applicable to dielectric capacitors, supercapacitors, and other related applications.
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Affiliation(s)
- Shanyu Zheng
- State Key Laboratory of Mechanical System and Vibration, Interdisciplinary Research Center, Institute of Refrigeration and Cryogenics, and MOE Key Laboratory for Power Machinery and Engineering, School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Feihong Du
- State Key Laboratory of Mechanical System and Vibration, Interdisciplinary Research Center, Institute of Refrigeration and Cryogenics, and MOE Key Laboratory for Power Machinery and Engineering, School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Lirong Zheng
- School of Physics and Astronomy, Institute of Natural Sciences, Shanghai National Center for Applied Mathematics (SJTU Center) and MOE-LSC, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Donglin Han
- State Key Laboratory of Mechanical System and Vibration, Interdisciplinary Research Center, Institute of Refrigeration and Cryogenics, and MOE Key Laboratory for Power Machinery and Engineering, School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Qiang Li
- State Key Laboratory of Mechanical System and Vibration, Interdisciplinary Research Center, Institute of Refrigeration and Cryogenics, and MOE Key Laboratory for Power Machinery and Engineering, School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Junye Shi
- State Key Laboratory of Mechanical System and Vibration, Interdisciplinary Research Center, Institute of Refrigeration and Cryogenics, and MOE Key Laboratory for Power Machinery and Engineering, School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Jiangping Chen
- State Key Laboratory of Mechanical System and Vibration, Interdisciplinary Research Center, Institute of Refrigeration and Cryogenics, and MOE Key Laboratory for Power Machinery and Engineering, School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Xiaoming Shi
- School of Materials Science and Engineering and Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
| | - Houbing Huang
- School of Materials Science and Engineering and Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
| | - Yaorong Luo
- National Laboratory of Solid State Microstructures and Collaborative Innovation Center of Advanced Microstructures, Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, China
| | - Yurong Yang
- National Laboratory of Solid State Microstructures and Collaborative Innovation Center of Advanced Microstructures, Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, China
| | | | - Linlin Wei
- Bruker (Beijing) Scientific Technology, Beijing 100192, China
| | - Nicolas de Souza
- Australian Nuclear Science and Technology Organisation (ANSTO), Sydney, NSW 2232, Australia
| | - Liang Hong
- School of Physics and Astronomy, Institute of Natural Sciences, Shanghai National Center for Applied Mathematics (SJTU Center) and MOE-LSC, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Xiaoshi Qian
- State Key Laboratory of Mechanical System and Vibration, Interdisciplinary Research Center, Institute of Refrigeration and Cryogenics, and MOE Key Laboratory for Power Machinery and Engineering, School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
- Shanghai Jiao Tong University ZhongGuanCun Research Institute, Liyang 213300, China
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3
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Grabec T, Soudná Z, Repček K, Lünser K, Fähler S, Stoklasová P, Sedlák P, Seiner H. Guided acoustic waves in thin epitaxial films: Experiment and inverse problem solution for NiTi. ULTRASONICS 2023; 138:107211. [PMID: 38056319 DOI: 10.1016/j.ultras.2023.107211] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/11/2023] [Revised: 11/09/2023] [Accepted: 11/23/2023] [Indexed: 12/08/2023]
Abstract
Despite the fundamental and technological importance of the elastic constants, a suitable method for their full characterization in epitaxial films is missing. Here we show that transient grating spectroscopy (TGS) with highly k-vector-selective generation and detection of acoustic waves is capable of determination of all independent elastic coefficients of an epitaxial thin film grown on a single-crystalline substrate. This experimental setup enables detection of various types of guided acoustic waves and evaluation of the directional dependence of their speeds of propagation. For the studied model system, which is a 3μm thin epitaxial film of the NiTi shape memory alloy on an MgO substrate, the TGS angular maps include Rayleigh-type surface acoustic waves as well as Sezawa-type and Love-type modes, delivering rich information on the elastic response of the film under different straining modes. The resulting inverse problem, which means the calculation of the elastic constants from the TGS maps, is subsequently solved using the Ritz-Rayleigh numerical method. Using this approach, tetragonal elastic constants of the NiTi film and their changes with the austenite→martensite phase transition are analyzed.
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Affiliation(s)
- Tomáš Grabec
- Institute of Thermomechanics, Czech Academy of Sciences, Dolejškova 5, 182 00 Prague, Czechia.
| | - Zuzana Soudná
- Czech Technical University in Prague, Faculty of Nuclear Sciences and Physical Engineering, Trojanova 13, 120 00 Prague, Czechia
| | - Kristýna Repček
- Czech Technical University in Prague, Faculty of Nuclear Sciences and Physical Engineering, Trojanova 13, 120 00 Prague, Czechia
| | - Klara Lünser
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, 01328 Dresden, Germany
| | - Sebastian Fähler
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, 01328 Dresden, Germany
| | - Pavla Stoklasová
- Institute of Thermomechanics, Czech Academy of Sciences, Dolejškova 5, 182 00 Prague, Czechia
| | - Petr Sedlák
- Institute of Thermomechanics, Czech Academy of Sciences, Dolejškova 5, 182 00 Prague, Czechia
| | - Hanuš Seiner
- Institute of Thermomechanics, Czech Academy of Sciences, Dolejškova 5, 182 00 Prague, Czechia
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4
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Bae IT, Lingley ZR, Foran BJ, Adams PM, Paik H. Large bi-axial tensile strain effect in epitaxial BiFeO 3 film grown on single crystal PrScO 3. Sci Rep 2023; 13:19018. [PMID: 37923812 PMCID: PMC10624869 DOI: 10.1038/s41598-023-45980-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/19/2023] [Accepted: 10/26/2023] [Indexed: 11/06/2023] Open
Abstract
A BiFeO3 film is grown epitaxially on a PrScO3 single crystal substrate which imparts ~ 1.45% of biaxial tensile strain to BiFeO3 resulting from lattice misfit. The biaxial tensile strain effect on BiFeO3 is investigated in terms of crystal structure, Poisson ratio, and ferroelectric domain structure. Lattice resolution scanning transmission electron microscopy, precession electron diffraction, and X-ray diffraction results clearly show that in-plane interplanar distance of BiFeO3 is the same as that of PrScO3 with no sign of misfit dislocations, indicating that the biaxial tensile strain caused by lattice mismatch between BiFeO3 and PrScO3 are stored as elastic energy within BiFeO3 film. Nano-beam electron diffraction patterns compared with structure factor calculation found that the BiFeO3 maintains rhombohedral symmetry, i.e., space group of R3c. The pattern analysis also revealed two crystallographically distinguishable domains. Their relations with ferroelectric domain structures in terms of size and spontaneous polarization orientations within the domains are further understood using four-dimensional scanning transmission electron microscopy technique.
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Affiliation(s)
- In-Tae Bae
- Microeletronics Technology Department, The Aerospace Corporation, El Segundo, CA, 90009, USA.
| | - Zachary R Lingley
- Microeletronics Technology Department, The Aerospace Corporation, El Segundo, CA, 90009, USA
| | - Brendan J Foran
- Microeletronics Technology Department, The Aerospace Corporation, El Segundo, CA, 90009, USA
| | - Paul M Adams
- Materials Processing Department, The Aerospace Corporation, El Segundo, CA, 90009, USA
| | - Hanjong Paik
- School of Electrical and Computer Engineering, University of Oklahoma, Norman, OK, 73019, USA
- Center for Quantum Research and Technology, University of Oklahoma, Norman, OK, 73019, USA
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5
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Han L, Yang X, Lun Y, Guan Y, Huang F, Wang S, Yang J, Gu C, Gu ZB, Liu L, Wang Y, Wang P, Hong J, Pan X, Nie Y. Tuning Piezoelectricity via Thermal Annealing at a Freestanding Ferroelectric Membrane. NANO LETTERS 2023; 23:2808-2815. [PMID: 36961344 DOI: 10.1021/acs.nanolett.3c00096] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Tuning the ferroelectric domain structure by a combination of elastic and electrostatic engineering provides an effective route for enhanced piezoelectricity. However, for epitaxial thin films, the clamping effect imposed by the substrate does not allow aftergrowth tuning and also limits the electromechanical response. In contrast, freestanding membranes, which are free of substrate constraints, enable the tuning of a subtle balance between elastic and electrostatic energies, giving new platforms for enhanced and tunable functionalities. Here, highly tunable piezoelectricity is demonstrated in freestanding PbTiO3 membranes, by varying the ferroelectric domain structures from c-dominated to c/a and a domains via aftergrowth thermal treatment. Significantly, the piezoelectric coefficient of the c/a domain structure is enhanced by a factor of 2.5 compared with typical c domain PbTiO3. This work presents a new strategy to manipulate the piezoelectricity in ferroelectric membranes, highlighting their great potential for nano actuators, transducers, sensors and other NEMS device applications.
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Affiliation(s)
- Lu Han
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
| | - Xinrui Yang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
| | - Yingzhuo Lun
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Yue Guan
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
| | - Futao Huang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
| | - Shuhao Wang
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, Jiangsu, People's Republic of China
| | - Jiangfeng Yang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
| | - Chenyi Gu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
| | - Zheng-Bin Gu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
| | - Lisha Liu
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, Jiangsu, People's Republic of China
| | - Yaojin Wang
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, Jiangsu, People's Republic of China
| | - Peng Wang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
- Department of Physics, University of Warwick, Coventry CV4 7AL, U.K
| | - Jiawang Hong
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Xiaoqing Pan
- Department of Physics and Astronomy, University of California, Irvine, California 92697, United States
- Department of Materials Science and Engineering, University of California, Irvine, California 92697, United States
- Irvine Materials Research Institute, University of California, Irvine, California 92697, United States
| | - Yuefeng Nie
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
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6
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Luo Y, Wang Z, Chen Y, Qin M, Fan Z, Zeng M, Zhou G, Lu X, Gao X, Chen D, Liu JM. Strain Tuning of Negative Capacitance in Ferroelectric KNbO 3 Thin Films. ACS APPLIED MATERIALS & INTERFACES 2023; 15:16902-16909. [PMID: 36966506 DOI: 10.1021/acsami.3c01866] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Ferroelectrics with negative capacitance effects can amplify the gate voltage in field-effect transistors to achieve low power operation beyond the limits of Boltzmann's Tyranny. The reduction of power consumption depends on the capacitance matching between the ferroelectric layer and gate dielectrics, which can be well controlled by adjusting the negative capacitance effect in ferroelectrics. However, it is a great challenge to experimentally tune the negative capacitance effect. Here, the observation of the tunable negative capacitance effect in ferroelectric KNbO3 through strain engineering is demonstrated. The magnitude of the voltage reduction and negative slope in polarization-electric field (P-E) curves as the symbol of negative capacitance effects can be controlled by imposing various epitaxial strains. The adjustment of the negative curvature region in the polarization-energy landscape under different strain states is responsible for the tunable negative capacitance. Our work paves the way for fabricating low-power devices and further reducing energy consumption in electronics.
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Affiliation(s)
- Yongjian Luo
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Zhen Wang
- Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100049, China
| | - Yu Chen
- Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
| | - Minghui Qin
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Zhen Fan
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Min Zeng
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Guofu Zhou
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Xubing Lu
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Xingsen Gao
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Deyang Chen
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Jun-Ming Liu
- Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
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7
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Kwok MH, Huang J, Rui G, Bohannon CA, Li R, Zhang H, Zhao B, Zhu L. Achieving High Permittivity Paraelectric Behavior in Mesogen-Free Sulfonylated Chiral Polyethers with Smectic C Liquid Crystalline Self-Assembly. Macromolecules 2023. [DOI: 10.1021/acs.macromol.2c02549] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/25/2023]
Affiliation(s)
- Man-Hin Kwok
- Department of Macromolecular Science and Engineering and Department of Chemistry, Case Western Reserve University, Cleveland, Ohio 44106-7202, United States
| | - Jiahao Huang
- Department of Macromolecular Science and Engineering and Department of Chemistry, Case Western Reserve University, Cleveland, Ohio 44106-7202, United States
| | - Guanchun Rui
- Department of Macromolecular Science and Engineering and Department of Chemistry, Case Western Reserve University, Cleveland, Ohio 44106-7202, United States
| | - Caleb A. Bohannon
- Department of Chemistry, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Ruipeng Li
- National Synchrotron Light Source II, Brookhaven National Laboratory, Upton, New York, New York 11973, United States
| | - Honghu Zhang
- National Synchrotron Light Source II, Brookhaven National Laboratory, Upton, New York, New York 11973, United States
| | - Bin Zhao
- Department of Chemistry, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Lei Zhu
- Department of Macromolecular Science and Engineering and Department of Chemistry, Case Western Reserve University, Cleveland, Ohio 44106-7202, United States
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8
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Cao Y, Tang YL, Zhu YL, Wang Y, Liu N, Zou MJ, Feng YP, Geng WR, Li C, Li D, Li Y, Wu B, Liu J, Gong F, Zhang Z, Ma XL. Polar Magnetism Above 600 K with High Adaptability in Perovskite Oxides. ACS APPLIED MATERIALS & INTERFACES 2022; 14:48052-48060. [PMID: 36226575 DOI: 10.1021/acsami.2c15286] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
High magnetic order temperature, sustainable polar insulating state, and tolerance to device integrations are substantial advantages for applications in next-generation spintronics. However, engineering such functionality in a single-phase system remains a challenge owing to the contradicted chemical and electronic requirements for polar nature and magnetism, especially with an ordering state highly above room temperature. Perovskite-related oxides with unique flexibility allow electron-unpaired subsystems to merge into the polar lattice to induce magnetic interactions, combined with their inherent asymmetry, thereby promising polar magnet design. Herein, by atomic-level composition assembly, a family of Ti/Fe co-occupied perovskite oxide films Pb(Ti1-x,Fex)O3 (PFT(x)) with a Ruddlesden-Popper superstructure are successfully synthesized on several different substrates, demonstrating exceptional adaptability to different integration conditions. Furthermore, second-harmonic generation measurements convince the symmetry-breaking polar character. Notably, a ferromagnetic ground state up to 600 K and a steady insulating state far beyond room temperature were achieved simultaneously in these films. This strategy of constructing layered modular superlattices in perovskite oxides could be extended to other strongly correlated systems for triggering nontrivial quantum physical phenomena.
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Affiliation(s)
- Yi Cao
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, 110016 Shenyang, China
- School of Materials Science and Engineering, University of Science and Technology of China, Wenhua Road 72, 110016 Shenyang, China
| | - Yun-Long Tang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, 110016 Shenyang, China
| | - Yin-Lian Zhu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, 110016 Shenyang, China
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan 523808, Guangdong, China
| | - Yujia Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, 110016 Shenyang, China
| | - Nan Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, 110016 Shenyang, China
- School of Materials Science and Engineering, University of Science and Technology of China, Wenhua Road 72, 110016 Shenyang, China
| | - Min-Jie Zou
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan 523808, Guangdong, China
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Yan-Peng Feng
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan 523808, Guangdong, China
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Wan-Rong Geng
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan 523808, Guangdong, China
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Changji Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, 110016 Shenyang, China
| | - Da Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, 110016 Shenyang, China
| | - Yong Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, 110016 Shenyang, China
- School of Materials Science and Engineering, University of Science and Technology of China, Wenhua Road 72, 110016 Shenyang, China
| | - Bo Wu
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan 523808, Guangdong, China
| | - Jiaqi Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, 110016 Shenyang, China
- School of Materials Science and Engineering, University of Science and Technology of China, Wenhua Road 72, 110016 Shenyang, China
| | - Fenghui Gong
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, 110016 Shenyang, China
- School of Materials Science and Engineering, University of Science and Technology of China, Wenhua Road 72, 110016 Shenyang, China
| | - Zhidong Zhang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, 110016 Shenyang, China
| | - Xiu-Liang Ma
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, 110016 Shenyang, China
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan 523808, Guangdong, China
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
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Hu YQ, Liu NT, Lao J, Liang RH, Deng X, Guan Z, Chen BB, Peng H, Zhong N, Xiang PH, Duan CG. Ultrahigh Ferroelectric and Piezoelectric Properties in BiFeO 3-BaTiO 3 Epitaxial Films Near Morphotropic Phase Boundary. ACS APPLIED MATERIALS & INTERFACES 2022; 14:36825-36833. [PMID: 35929806 DOI: 10.1021/acsami.2c09062] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Ferroelectric solid solutions with composition near the morphotropic phase boundary (MPB) have gained extensive attention recently due to their excellent ferroelectric and piezoelectric properties. Here, we have demonstrated a strategy to realize the controllable preparation of BiFeO3-BaTiO3 (BF-BT) epitaxial films near the MPB. A series of high-quality BF-BT films were fabricated by pulsed laser deposition via adjusting oxygen partial pressure (PO2) using a BF-BT ceramic target. A continuous transition from rhombohedral to tetragonal phase was observed upon increasing PO2. Particularly, the film with a pure tetragonal phase exhibited a large remnant polarization of ∼90.6 μC/cm2, while excellent piezoelectric performance with an ultrahigh strain (∼0.48%) was obtained in the film with coexisting rhombohedral and tetragonal phases. The excellent ferroelectric and piezoelectric properties endow the BF-BT system near the MPB with great application prospects in lead-free electronic devices.
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Affiliation(s)
- Yu-Qing Hu
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai 200241, China
| | - Ning-Tao Liu
- Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Jie Lao
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai 200241, China
| | - Rui-Hong Liang
- Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China
| | - Xing Deng
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai 200241, China
| | - Zhao Guan
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai 200241, China
| | - Bin-Bin Chen
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai 200241, China
| | - Hui Peng
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China
| | - Ni Zhong
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China
| | - Ping-Hua Xiang
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China
| | - Chun-Gang Duan
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China
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Cui A, Ye Y, Dai K, Li Y, Zhu L, Jiang K, Shang L, Xu G, Hu Z, Zhang S, Chu J. Designing Monoclinic Heterophase Coexistence for the Enhanced Piezoelectric Performance in Ternary Lead-Based Relaxor Ferroelectrics. ACS APPLIED MATERIALS & INTERFACES 2022; 14:10535-10545. [PMID: 35175024 DOI: 10.1021/acsami.1c22983] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Enhanced piezoelectric, dielectric properties and thermal stability in ternary relaxor-PbTiO3 based ferroelectric crystals are expected to develop the next-generation of electromechanical devices. However, due to their increased disorder compared to other ferroelectrics, designing a controllable phase boundary structure and engineered domain remains a challenging task. Here, we construct a monoclinic heterophase coexisting in a ternary Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 single crystal with optimized composition and an ultrahigh piezoelectric coefficient of 1400 pC N-1, to quantify the correlation between spontaneous nanopolarity and phase heterogeneity, in an attempt to understand the origin of the exceptional functionalities. By designing an in situ high-resolution spectroscopic-microscopic technique, we have observed Ma and Mc heterophase mixtures spatially separated by the monoclinic heterophase boundary (MHB), which are responsible for the ferroelectric-dominated and relaxor-ferroelectric-dominated nanodomain structure, respectively. Internal energy mapping from optical soft mode dynamics reveals the inhomogeneous polarization and local symmetry on both sides of the MHB. Various molecular polarizabilities and localized octahedral distortions correlate directly with monoclinic regions and electromechanical contribution. This work clarifies the heterogeneity between structure, energy, and polar order and provides a new design freedom for advanced relaxor ferroelectrics.
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Affiliation(s)
- Anyang Cui
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, P. R. China
| | - Yan Ye
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, P. R. China
| | - Kai Dai
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, P. R. China
| | - Yawei Li
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, P. R. China
| | - Liangqing Zhu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, P. R. China
| | - Kai Jiang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, P. R. China
| | - Liyan Shang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, P. R. China
| | - Guisheng Xu
- R&D Center of Synthetic Crystals, Chinese Academy of Sciences Shanghai Institute of Ceramics, 585 Heshuo Road, Shanghai 201899, P. R. China
| | - Zhigao Hu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, P. R. China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, P. R. China
- Shanghai Institute of Intelligent Electronics & Systems, Fudan University, Shanghai 200433, P. R. China
| | - Shujun Zhang
- Institute for Superconducting and Electronic Materials, Australian Institute for Innovative Materials, University of Wollongong, Wollongong, New South Wales 2500, Australia
| | - Junhao Chu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, P. R. China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, P. R. China
- Shanghai Institute of Intelligent Electronics & Systems, Fudan University, Shanghai 200433, P. R. China
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11
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Sando D. Strain and orientation engineering in ABO 3perovskite oxide thin films. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:153001. [PMID: 35042194 DOI: 10.1088/1361-648x/ac4c61] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/15/2021] [Accepted: 01/18/2022] [Indexed: 06/14/2023]
Abstract
Perovskite oxides with chemical formula ABO3are widely studied for their properties including ferroelectricity, magnetism, strongly correlated physics, optical effects, and superconductivity. A thriving research direction using such materials is through their integration as epitaxial thin films, allowing many novel and exotic effects to be discovered. The integration of the thin film on a single crystal substrate, however, can produce unique and powerful effects, and can even induce phases in the thin film that are not stable in bulk. The substrate imposed mechanical boundary conditions such as strain, crystallographic orientation, octahedral rotation patterns, and symmetry can also affect the functional properties of perovskite films. Here, the author reviews the current state of the art in epitaxial strain and orientation engineering in perovskite oxide thin films. The paper begins by introducing the effect of uniform conventional biaxial strain, and then moves to describe how the substrate crystallographic orientation can induce symmetry changes in the film materials. Various material case studies, including ferroelectrics, magnetically ordered materials, and nonlinear optical oxides are covered. The connectivity of the oxygen octahedra between film and substrate depending on the strain level as well as the crystallographic orientation is then discussed. The review concludes with open questions and suggestions worthy of the community's focus in the future.
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Affiliation(s)
- Daniel Sando
- School of Materials Science and Engineering, UNSW Sydney, Kensington, 2052, Australia
- ARC Centre of Excellence in Future Low Energy Electronics Technologies (FLEET), UNSW Sydney, Kensington, 2052, Australia
- Mark Wainwright Analytical Centre, UNSW Sydney, Kensington, 2052, Australia
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