1
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Xu T, Wang L, Gao L, Li F, Hu B, Li B, Shen H, Liu Z, Hu BL. Intrinsic Elastomer with Remarkable Dielectric Constant via Elastification of Relaxor Ferroelectric Polymer. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2404001. [PMID: 38838735 DOI: 10.1002/adma.202404001] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/18/2024] [Revised: 06/03/2024] [Indexed: 06/07/2024]
Abstract
High-dielectric-constant elastomers always play a critical role in the development of wearable electronics for actuation, energy storage, and sensing; therefore, there is an urgent need for effective strategies to enhance dielectric constants. The present methods mainly involve adding inorganic or conductive fillers to the polymer elastomers, however, the addition of fillers causes a series of problems, such as large dielectric loss, increased modulus, and deteriorating interface conditions. Here, the elastification of relaxor ferroelectric polymers is investigated through slight cross-linking, aiming to obtain intrinsic elastomers with high-dielectric constants. By cross-linking of the relaxor ferroelectric polymer poly(vinylidene fluoride-ter-trifluoroethylene-ter-chlorofluoroethylene) with a long soft chain cross-linker, a relaxor ferroelectric elastomer with an enhanced dielectric constant is obtained, twice that of the pristine relaxor ferroelectric polymer and surpassing all reported intrinsic elastomers. This elastomer maintains its high-dielectric constant over a wide temperature range and exhibits robust mechanical fatigue resistance, chemical stability, and thermal stability. Moreover, the ferroelectricity of the elastomer remains stable under strains up to 80%. This study offers a simple and effective way to enhance the dielectric constant of intrinsic elastomers, thus facilitating advancements in soft robots, biosensors, and wearable electronics.
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Affiliation(s)
- Tianhua Xu
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Linping Wang
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
| | - Liang Gao
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
| | - Fangzhou Li
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Bing Hu
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
| | - Bowen Li
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
| | - Haoyu Shen
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Zhiwen Liu
- Oxford Instruments Technology China, Beijing, 100034, P. R. China
| | - Ben-Lin Hu
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
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2
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Wu Y, Yang H, He Q, Jiang H, Chen W, Tan C, Zhang Y, Zheng Y. The Investigation of Neuromimetic Dynamics in Ferroelectrics via In Situ TEM. NANO LETTERS 2024. [PMID: 38825790 DOI: 10.1021/acs.nanolett.4c01626] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2024]
Abstract
The core task of neuromorphic devices is to effectively simulate the behavior of neurons and synapses. Based on the functionality of ferroelectric domains with the advantages of low power consumption and high-speed response, great progress has been made in realizing neuromimetic behaviors such as ferroelectric synaptic devices. However, the correlation between the ferroelectric domain dynamics and neuromimetic behavior remains unclear. Here, we reveal the correlation between domain/domain wall dynamics and neuromimetic behaviors from a microscopic perspective in real-time by using high temporal and spatial resolution in situ transmission electron microscopy. Furthermore, we propose utilizing ferroelectric microstructures for the simultaneous simulation of neuronal and synaptic plasticity, which is expected to improve the integration and performance of ferroelectric neuromorphic devices. We believe that this work to study neuromimetic behavior from the perspective of domain dynamics is instructive for the development of ferroelectric neuromorphic devices.
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Affiliation(s)
- Yiwei Wu
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
| | - Hui Yang
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
| | - Qian He
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
| | - He Jiang
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
| | - Weijin Chen
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
| | - Congbing Tan
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- Hunan Provincial Key Laboratory of Intelligent Sensors and Sensor Materials, School of Physics and Electronics, Hunan University of Science and Technology, Xiangtan 411201, People's Republic of China
| | - Yi Zhang
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
| | - Yue Zheng
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
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3
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Wang Y, Zhou P, Fetisov L, Fetisov Y, Qi Y, Zhang T. Phase Conductance of BiFeO 3 Film. SENSORS (BASEL, SWITZERLAND) 2023; 23:9123. [PMID: 38005511 PMCID: PMC10674323 DOI: 10.3390/s23229123] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/03/2023] [Revised: 11/03/2023] [Accepted: 11/09/2023] [Indexed: 11/26/2023]
Abstract
In this work, the local conductance of the tetragonal-like (T-like) and rhombohedral-like (R-like) phases of epitaxial BiFeO3 film is systematically studied via conductive atomic force microscopy. At higher tip voltage, there is a mutual transition between the T-like and R-like phases, which could be attributed to the strain relaxation in the T-like phase induced by electric poling, as well as local polarization switching. The T-like phase exhibits a higher conductance, which is related to the lower interface potential barrier between the tip and film surface. Reversible low- and high-current states in the T-like phase can be tuned by polarization switching. These results will be helpful for designing novel nanoelectronic devices, such as voltage and strain sensors.
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Affiliation(s)
- Yufeng Wang
- Ministry of Education Key Laboratory for Green Preparation and Application of Functional Materials, Hubei Provincial Key Laboratory of Polymers, Collaborative Innovation Center for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, School of Materials Science and Engineering, Hubei University, Wuhan 430062, China; (Y.W.); (T.Z.)
| | - Peng Zhou
- Ministry of Education Key Laboratory for Green Preparation and Application of Functional Materials, Hubei Provincial Key Laboratory of Polymers, Collaborative Innovation Center for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, School of Materials Science and Engineering, Hubei University, Wuhan 430062, China; (Y.W.); (T.Z.)
| | - Leonid Fetisov
- Research-Education Center “Magnetoelectric Materials and Devices”, MIREA—Russian Technological University, Moscow 119454, Russia
| | - Yuri Fetisov
- Research-Education Center “Magnetoelectric Materials and Devices”, MIREA—Russian Technological University, Moscow 119454, Russia
| | - Yajun Qi
- Ministry of Education Key Laboratory for Green Preparation and Application of Functional Materials, Hubei Provincial Key Laboratory of Polymers, Collaborative Innovation Center for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, School of Materials Science and Engineering, Hubei University, Wuhan 430062, China; (Y.W.); (T.Z.)
| | - Tianjin Zhang
- Ministry of Education Key Laboratory for Green Preparation and Application of Functional Materials, Hubei Provincial Key Laboratory of Polymers, Collaborative Innovation Center for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, School of Materials Science and Engineering, Hubei University, Wuhan 430062, China; (Y.W.); (T.Z.)
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4
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Gao L, Hu BL, Wang L, Cao J, He R, Zhang F, Wang Z, Xue W, Yang H, Li RW. Intrinsically elastic polymer ferroelectric by precise slight cross-linking. Science 2023; 381:540-544. [PMID: 37535722 DOI: 10.1126/science.adh2509] [Citation(s) in RCA: 10] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/21/2023] [Accepted: 06/06/2023] [Indexed: 08/05/2023]
Abstract
Ferroelectrics are an integral component of the modern world and are of importance in electrics, electronics, and biomedicine. However, their usage in emerging wearable electronics is limited by inelastic deformation. We developed intrinsically elastic ferroelectrics by combining ferroelectric response and elastic resilience into one material by slight cross-linking of plastic ferroelectric polymers. The precise slight cross-linking can realize the complex balance between crystallinity and resilience. Thus, we obtained an elastic ferroelectric with a stable ferroelectric response under mechanical deformation up to 70% strain. This elastic ferroelectric exerts potentials in applications related to wearable electronics, such as elastic ferroelectric sensors, information storage, and energy transduction.
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Affiliation(s)
- Liang Gao
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, China
| | - Ben-Lin Hu
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Linping Wang
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Jinwei Cao
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Ri He
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Fengyuan Zhang
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Zhiming Wang
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Wuhong Xue
- Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Shanxi Normal University, Taiyuan 030032, China
| | - Huali Yang
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Run-Wei Li
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
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5
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Er X, Chen P, Yu X, Wang Q, Bian Z, Zhan Q. Artificially induced ferroelectric-like behavior in an antiferroelectric sandwich structure by interface engineering. Ann Ital Chir 2022. [DOI: 10.1016/j.jeurceramsoc.2022.09.011] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
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6
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Geng WR, Tang YL, Zhu YL, Wang YJ, Wu B, Yang LX, Feng YP, Zou MJ, Shi TT, Cao Y, Ma XL. Magneto-Electric-Optical Coupling in Multiferroic BiFeO 3 -Based Films. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2106396. [PMID: 35730916 DOI: 10.1002/adma.202106396] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/15/2021] [Revised: 06/17/2022] [Indexed: 06/15/2023]
Abstract
Manipulating ferroic orders and realizing their coupling in multiferroics at room temperature are promising for designing future multifunctional devices. Single external stimulation has been extensively proved to demonstrate the ability of ferroelastic switching in multiferroic oxides, which is crucial to bridge the ferroelectricity and magnetism. However, it is still challenging to directly realize multi-field-driven magnetoelectric coupling in multiferroic oxides as potential multifunctional electrical devices. Here, novel magneto-electric-optical coupling in multiferroic BiFeO3 -based thin films at room temperature mediated by deterministic ferroelastic switching using piezoresponse/magnetic force microscopy and aberration-corrected transmission electron microscopy are shown. Reversible photoinduced ferroelastic switching exhibiting magnetoelectric responses is confirmed in BiFeO3 -based films, which works at flexible strain states. This work directly demonstrates room-temperature magneto-electric-optical coupling in multiferroic films, which provides a framework for designing potential multi-field-driven magnetoelectric devices such as energy conservation memories.
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Affiliation(s)
- Wan-Rong Geng
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Yun-Long Tang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang, 110016, China
| | - Yin-Lian Zhu
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang, 110016, China
| | - Yu-Jia Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang, 110016, China
| | - Bo Wu
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Li-Xin Yang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang, 110016, China
| | - Yan-Peng Feng
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Min-Jie Zou
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Tong-Tong Shi
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang, 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Wenhua Road 72, Shenyang, 110016, China
| | - Yi Cao
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang, 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Wenhua Road 72, Shenyang, 110016, China
| | - Xiu-Liang Ma
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang, 110016, China
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7
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Wei L, Li C, Guan L, Guo J. Enhancing ferroelectric photovoltaic effect of BaTiO
3
by the lateral interface. SURF INTERFACE ANAL 2021. [DOI: 10.1002/sia.6978] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/31/2023]
Affiliation(s)
- Lijing Wei
- School of Computer and Information Engineering Hebei Finance University Baoding China
| | - Changliang Li
- Key Laboratory of High‐precision Computation and Application of Quantum Field Theory of Hebei Province, College of Physics Science and Technology Hebei University Baoding China
| | - Li Guan
- Key Laboratory of High‐precision Computation and Application of Quantum Field Theory of Hebei Province, College of Physics Science and Technology Hebei University Baoding China
| | - Jianxin Guo
- Key Laboratory of High‐precision Computation and Application of Quantum Field Theory of Hebei Province, College of Physics Science and Technology Hebei University Baoding China
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8
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Sohn W, Kim TL, Lee TH, Yoon S, Kim C, Yoo JW, Roh KC, Kim M, Jang HW. Suppression of metal-to-insulator transition using strong interfacial coupling at cubic and orthorhombic perovskite oxide heterointerfaces. NANOSCALE 2021; 13:708-715. [PMID: 33367436 DOI: 10.1039/d0nr07545k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
A quasi-two-dimensional electron gas (2DEG) evolved at the LaAlO3 (LAO)/SrTiO3 (STO) interface has attracted significant attention, because the insertion of perovskite titanates can tune the 2DEG conductivity. However, this depends on the Ti-O-Ti bonding angle and structural symmetry. In this study, we controlled the octahedral tilt of the LAO/CaTiO3 (CTO) interface by heterostructuring it with CTO grown on STO substrates of various thicknesses. The 2DEG was maintained when the thickness of CTO was below the critical thickness of 5 unit cells (uc); however, it was suppressed when the CTO thickness was above the critical thickness. High-angle annular dark-field (HAADF) scanning transmission electron microscopy (STEM) combined with integrated differential phase contrast (iDPC) STEM imaging was used to visualize the TiO6 octahedral tilt propagation and symmetry of the 5 uc and 24 uc CTO films. The symmetry of the 5 uc CTO film resembled that of the STO substrate, whereas the octahedral tilt propagated in the 24 uc CTO film due to the structural relaxation. These results show that the interface engineering of the octahedral tilt can enable or suppress the formation of the 2DEG in perovskite oxides.
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Affiliation(s)
- Woonbae Sohn
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea and Energy Storage Materials Centre, Korea Institute of Ceramic Engineering and Technology, Jinju 52851, Republic of Korea
| | - Taemin Ludvic Kim
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
| | - Tae Hyung Lee
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
| | - Sangmoon Yoon
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
| | - Chungsoo Kim
- Technology of Analysis Centre, Korea Institute of Ceramic Engineering and Technology, Jinju 52851, Republic of Korea
| | - Jung-Woo Yoo
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
| | - Kwang Chul Roh
- Energy Storage Materials Centre, Korea Institute of Ceramic Engineering and Technology, Jinju 52851, Republic of Korea
| | - Miyoung Kim
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
| | - Ho Won Jang
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
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9
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Ye M, Hu S, Zhu Y, Zhang Y, Ke S, Xie L, Zhang Y, Hu S, Zhang D, Luo Z, Gu M, He J, Zhang P, Zhang W, Chen L. Electric Polarization Switching on an Atomically Thin Metallic Oxide. NANO LETTERS 2021; 21:144-150. [PMID: 33306405 DOI: 10.1021/acs.nanolett.0c03417] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Materials with reduced dimensions have been shown to host a wide variety of exotic properties and novel quantum states that often defy textbook wisdom. Polarization switching and metallic screening are well-known examples of mutually exclusive properties that cannot coexist in bulk solids. Here we report the fabrication of (SrRuO3)1/(BaTiO3)10 superlattices that exhibits reversible polarization switching in an atomically thin metallic layer. A multipronged investigation combining structural analyses, electrical measurements, and first-principles electronic structure calculations unravels the coexistence of two-dimensional (2D) metallicity in the SrRuO3 layer accompanied by the breaking of inversion symmetry, supporting electric polarization along the out-of-plane direction. Such a 2D ferroelectric-like metal paves a novel way to engineer a quantum multistate with unusual coexisting properties, such as ferroelectrics and metals, manipulated by external fields.
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Affiliation(s)
- Mao Ye
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Songbai Hu
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Yuanmin Zhu
- Academy for Advanced Interdisciplinary Studies, Southern University of Science and Technology, Shenzhen 518055, China
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Yubo Zhang
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Shanming Ke
- School of Materials Science and Engineering, Nanchang University, Nanchang 330031, China
| | - Lin Xie
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Yuan Zhang
- School of Materials Science and Engineering, Xiangtan University, Hunan 411105, China
| | - Sixia Hu
- Core Research Facilities, Southern University of Science and Technology, Shenzhen 518055, China
| | - Dongwen Zhang
- College of Science, National University of Defense Technology, Hunan 410073, China
| | - Zhenlin Luo
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China
| | - Meng Gu
- Academy for Advanced Interdisciplinary Studies, Southern University of Science and Technology, Shenzhen 518055, China
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Jiaqing He
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Peihong Zhang
- Department of Physics, State University of New York at Buffalo, Buffalo, New York 14260, United States
| | - Wenqing Zhang
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Lang Chen
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
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10
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Sun J, Li Q, Zhu H, Liu Z, Lin K, Wang N, Zhang Q, Gu L, Deng J, Chen J, Xing X. Negative-Pressure-Induced Large Polarization in Nanosized PbTiO 3. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2002968. [PMID: 33118254 DOI: 10.1002/adma.202002968] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/02/2020] [Revised: 09/27/2020] [Indexed: 06/11/2023]
Abstract
Ferroelectric materials usually undergo decay with particle size decreasing into the nanoscale. At the critical value, the crystal structure undergoes a transition from the ferroelectric to paraelectric phase and the ferroelectricity vanishes. It is a big issue to sufficiently maintain strong ferroelectricity at the nanoscale. Herein, it is reported that synthesized 0D freestanding PbTiO3 nanoparticles (NPs) present negative pressure along the c axis (Δc/cbulk × 100% = -2.406), inducing large spontaneous polarization PS (71.2 µC cm-2 in 12 nm). Further local structural studies by atomic pair distribution functions and extended X-ray absorption fine structure indicate the structural evolution of nanosized PbTiO3 . High-angle annular dark-field STEM images reveal the existence of preponderant PbO-terminations on the surface of the PbTiO3 NPs. Ab initio calculation reveals the enhanced hybridization between Pb and O ions, which gives rise to the negative pressure and tensile stress to stabilize the high tetragonality and large polarization. The present work demonstrates an untraditional route to enhance the ferroelectricity and related properties in functional nanostructured materials, being of significance to nanodevices.
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Affiliation(s)
- Jing Sun
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute of Solid State Chemistry, Department of Physical Chemistry, University of Science and Technology Beijing, Beijing, 100083, China
| | - Qiang Li
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute of Solid State Chemistry, Department of Physical Chemistry, University of Science and Technology Beijing, Beijing, 100083, China
| | - He Zhu
- Department of Physics, City University of Hong Kong, Hong Kong, 999077, China
| | - Zhanning Liu
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute of Solid State Chemistry, Department of Physical Chemistry, University of Science and Technology Beijing, Beijing, 100083, China
| | - Kun Lin
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute of Solid State Chemistry, Department of Physical Chemistry, University of Science and Technology Beijing, Beijing, 100083, China
| | - Na Wang
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute of Solid State Chemistry, Department of Physical Chemistry, University of Science and Technology Beijing, Beijing, 100083, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Lin Gu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Jinxia Deng
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute of Solid State Chemistry, Department of Physical Chemistry, University of Science and Technology Beijing, Beijing, 100083, China
| | - Jun Chen
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute of Solid State Chemistry, Department of Physical Chemistry, University of Science and Technology Beijing, Beijing, 100083, China
| | - Xianran Xing
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute of Solid State Chemistry, Department of Physical Chemistry, University of Science and Technology Beijing, Beijing, 100083, China
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11
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Bennett D, Muñoz Basagoiti M, Artacho E. Electrostatics and domains in ferroelectric superlattices. ROYAL SOCIETY OPEN SCIENCE 2020; 7:201270. [PMID: 33391805 PMCID: PMC7735331 DOI: 10.1098/rsos.201270] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/20/2020] [Accepted: 10/14/2020] [Indexed: 06/10/2023]
Abstract
The electrostatics arising in ferroelectric/dielectric two-dimensional heterostructures and superlattices is revisited within a Kittel model in order to define and complete a clear paradigmatic reference for domain formation. The screening of the depolarizing field in isolated ferroelectric or polar thin films via the formation of 180° domains is well understood, where the width of the domains w grows as the square-root of the film thickness d, following Kittel's Law for thick enough films (w ≪ d). For thinner films, a minimum is reached for w before diverging to a monodomain. Although this behaviour is known to be qualitatively unaltered when the dielectric environment of the film is modified, we consider the quantitative changes in that behaviour induced on the ferroelectric film by different dielectric settings: as deposited on a dielectric substrate, sandwiched between dielectrics, and in a superlattice of alternating ferroelectric/dielectric films. The model assumes infinitely thin domain walls, and therefore is not expected to be reliable for film thickness in the nanometre scale. The polarization field P(r) does vary in space, deviating from ±P S , following the depolarizing field in linear response, but the model does not include a polarization-gradient term as would appear in a Ginzburg-Landau free energy. The model is, however, worth characterizing, both as paradigmatic reference, and as applicable to not-so-thin films. The correct renormalization of parameters is obtained for the thick-film square-root behaviour in the mentioned settings, and the sub-Kittel regime is fully characterized. New results are presented alongside well-known ones for a comprehensive description. Among the former, a natural separation between strong and weak ferroelectric coupling in superlattices is found, which depends exclusively on the dielectric anisotropy of the ferroelectric layer.
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Affiliation(s)
- Daniel Bennett
- Theory of Condensed Matter, Cavendish Laboratory, Department of Physics, J J Thomson Avenue, Cambridge CB3 0HE, UK
| | - Maitane Muñoz Basagoiti
- Faculty of Science and Technology, University of the Basque Country, Barrio Sarriena 48940 Leioa, Spain
- Gulliver Lab UMR 7083, ESPCI PSL Research University, 75005 Paris, France
- CIC Nanogune and DIPC, Tolosa Hiribidea 76, 20018 San Sebastian, Spain
| | - Emilio Artacho
- Theory of Condensed Matter, Cavendish Laboratory, Department of Physics, J J Thomson Avenue, Cambridge CB3 0HE, UK
- CIC Nanogune and DIPC, Tolosa Hiribidea 76, 20018 San Sebastian, Spain
- Ikerbasque, Basque Foundation for Science, 48011 Bilbao, Spain
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12
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Wang L, Liu S, Feng X, Zhang C, Zhu L, Zhai J, Qin Y, Wang ZL. Flexoelectronics of centrosymmetric semiconductors. NATURE NANOTECHNOLOGY 2020; 15:661-667. [PMID: 32572230 DOI: 10.1038/s41565-020-0700-y] [Citation(s) in RCA: 56] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/05/2020] [Accepted: 04/27/2020] [Indexed: 06/11/2023]
Abstract
Interface engineering by local polarization using piezoelectric1-4, pyroelectric5,6 and ferroelectric7-9 effects has attracted considerable attention as a promising approach for tunable electronics/optoelectronics, human-machine interfacing and artificial intelligence. However, this approach has mainly been applied to non-centrosymmetric semiconductors, such as wurtzite-structured ZnO and GaN, limiting its practical applications. Here we demonstrate an electronic regulation mechanism, the flexoelectronics, which is applicable to any semiconductor type, expanding flexoelectricity10-13 to conventional semiconductors such as Si, Ge and GaAs. The inner-crystal polarization potential generated by the flexoelectric field serving as a 'gate' can be used to modulate the metal-semiconductor interface Schottky barrier and further tune charge-carrier transport. We observe a giant flexoelectronic effect in bulk centrosymmetric semiconductors of Si, TiO2 and Nb-SrTiO3 with high strain sensitivity (>2,650), largely outperforming state-of-the-art Si-nanowire strain sensors and even piezoresistive, piezoelectric and ferroelectric nanodevices14. The effect can be used to mechanically switch the electronics in the nanoscale with fast response (<4 ms) and high resolution (~0.78 nm). This opens up the possibility of realizing strain-modulated electronics in centrosymmetric semiconductors, paving the way for local polarization field-controlled electronics and high-performance electromechanical applications.
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Affiliation(s)
- Longfei Wang
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, P. R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, P. R. China
- School of Material Science and Engineering, Georgia Institute of Technology, Atlanta, GA, USA
| | - Shuhai Liu
- School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, P. R. China
| | - Xiaolong Feng
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore, Singapore
| | - Chunli Zhang
- Key Laboratory of Soft Machines and Smart Devices of Zhejiang Province, Department of Engineering Mechanics, Zhejiang University, Hangzhou, P. R. China
| | - Laipan Zhu
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, P. R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, P. R. China
| | - Junyi Zhai
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, P. R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, P. R. China
| | - Yong Qin
- Institute of Nanoscience and Nanotechnology, School of Physical Science and Technology, Lanzhou University, Gansu, P. R. China.
| | - Zhong Lin Wang
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, P. R. China.
- School of Material Science and Engineering, Georgia Institute of Technology, Atlanta, GA, USA.
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13
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Affiliation(s)
- Nazanin Bassiri-Gharb
- G.W. Woodruff School of Mechanical Engineering and School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, USA.
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14
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Wang N, Luo X, Han L, Zhang Z, Zhang R, Olin H, Yang Y. Structure, Performance, and Application of BiFeO 3 Nanomaterials. NANO-MICRO LETTERS 2020; 12:81. [PMID: 34138095 PMCID: PMC7770668 DOI: 10.1007/s40820-020-00420-6] [Citation(s) in RCA: 30] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/18/2020] [Accepted: 02/28/2020] [Indexed: 05/27/2023]
Abstract
Multiferroic nanomaterials have attracted great interest due to simultaneous two or more properties such as ferroelectricity, ferromagnetism, and ferroelasticity, which can promise a broad application in multifunctional, low-power consumption, environmentally friendly devices. Bismuth ferrite (BiFeO3, BFO) exhibits both (anti)ferromagnetic and ferroelectric properties at room temperature. Thus, it has played an increasingly important role in multiferroic system. In this review, we systematically discussed the developments of BFO nanomaterials including morphology, structures, properties, and potential applications in multiferroic devices with novel functions. Even the opportunities and challenges were all analyzed and summarized. We hope this review can act as an updating and encourage more researchers to push on the development of BFO nanomaterials in the future.
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Affiliation(s)
- Nan Wang
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, People's Republic of China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Xudong Luo
- School of Materials and Metallurgy, University of Science and Technology Liaoning, 185 Qianshan Zhong Road, Anshan, 114051, Liaoning, People's Republic of China
| | - Lu Han
- School of Materials and Metallurgy, University of Science and Technology Liaoning, 185 Qianshan Zhong Road, Anshan, 114051, Liaoning, People's Republic of China.
| | - Zhiqiang Zhang
- School of Chemical Engineering, University of Science and Technology Liaoning, 185 Qianshan Zhong Road, Anshan, 114051, Liaoning, People's Republic of China
| | - Renyun Zhang
- Department of Natural Sciences, Mid Sweden University, Holmgatan 10, 85170, Sundsvall, Sweden
| | - Håkan Olin
- Department of Natural Sciences, Mid Sweden University, Holmgatan 10, 85170, Sundsvall, Sweden
| | - Ya Yang
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, People's Republic of China.
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China.
- Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning, 530004, Guangxi, People's Republic of China.
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15
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Zhang T, Ma Y, Xu X, Lei C, Huang B, Dai Y. Two-Dimensional Ferroelastic Semiconductors in Nb 2SiTe 4 and Nb 2GeTe 4 with Promising Electronic Properties. J Phys Chem Lett 2020; 11:497-503. [PMID: 31885269 DOI: 10.1021/acs.jpclett.9b03433] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Two-dimensional crystals with coupling of ferroelasticity and attractive electronic properties offer unprecedented opportunities for achieving long-sought controllable devices. However, to date, the reported proposals are mainly based on hypothetical structures. Here, using first-principles calculations, we identify single-layer Nb2ATe4 (A = Si, Ge), which can be exfoliated from its layered bulk, as a promising candidate. Single-layer Nb2ATe4 is found to be dynamically, thermally, and chemically stable. It possesses excellent ferroelasticity with high reversible ferroelastic strain and a moderate ferroelastic transition energy barrier, which are beneficial for practical applications. Meanwhile, it harbors outstanding anisotropic electronic properties, including anisotropic carrier mobility and optical properties. More importantly, the anisotropic properties of single-layer Nb2ATe4 can be efficiently controlled through ferroelastic switching. These appealing properties combined with the experimental feasibility render single-layer Nb2ATe4 an extraordinary platform for realizing controllable devices.
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Affiliation(s)
- Ting Zhang
- School of Physics, State Key Laboratory of Crystal Materials , Shandong University , Shandanan Street 27 , Jinan 250100 , China
| | - Yandong Ma
- School of Physics, State Key Laboratory of Crystal Materials , Shandong University , Shandanan Street 27 , Jinan 250100 , China
| | - Xilong Xu
- School of Physics, State Key Laboratory of Crystal Materials , Shandong University , Shandanan Street 27 , Jinan 250100 , China
| | - Chengan Lei
- School of Physics, State Key Laboratory of Crystal Materials , Shandong University , Shandanan Street 27 , Jinan 250100 , China
| | - Baibiao Huang
- School of Physics, State Key Laboratory of Crystal Materials , Shandong University , Shandanan Street 27 , Jinan 250100 , China
| | - Ying Dai
- School of Physics, State Key Laboratory of Crystal Materials , Shandong University , Shandanan Street 27 , Jinan 250100 , China
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16
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Yin L, Mi W. Progress in BiFeO 3-based heterostructures: materials, properties and applications. NANOSCALE 2020; 12:477-523. [PMID: 31850428 DOI: 10.1039/c9nr08800h] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
BiFeO3-based heterostructures have attracted much attention for potential applications due to their room-temperature multiferroic properties, proper band gaps and ultrahigh ferroelectric polarization of BiFeO3, such as data storage, optical utilization in visible light regions and synapse-like function. Here, this work aims to offer a systematic review on the progress of BiFeO3-based heterostructures. In the first part, the optical, electric, magnetic, and valley properties and their interactions in BiFeO3-based heterostructures are briefly reviewed. In the second part, the morphologies of BiFeO3 and medium materials in the heterostructures are discussed. Particularly, in the third part, the physical properties and underlying mechanism in BiFeO3-based heterostructures are discussed thoroughly, such as the photovoltaic effect, electric field control of magnetism, resistance switching, and two-dimensional electron gas and valley characteristics. The fourth part illustrates the applications of BiFeO3-based heterostructures based on the materials and physical properties discussed in the second and third parts. This review also includes a future prospect, which can provide guidance for exploring novel physical properties and designing multifunctional devices.
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Affiliation(s)
- Li Yin
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin 300354, China.
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17
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Yang L, Ravi SK, Nandakumar DK, Alzakia FI, Lu W, Zhang Y, Yang J, Zhang Q, Zhang X, Tan SC. A Hybrid Artificial Photocatalysis System Splits Atmospheric Water for Simultaneous Dehumidification and Power Generation. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1902963. [PMID: 31650636 DOI: 10.1002/adma.201902963] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/09/2019] [Revised: 07/30/2019] [Indexed: 06/10/2023]
Abstract
A new approach for artificial photocatalysis of electrical generation directly from atmospheric water is reported. A hybrid system comprising a hydrogel incorporated with Cu2 O and BaTiO3 nanoparticles is developed, wherein the Cu2 O is designed to expose two different crystal planes, namely (100) and (111). These planes exhibit different surface potentials and form a polarization electric field of 2.3 kV cm-1 that acts on a ferroelectric dipole. With the help of this electric field, the dipole is redirected for aiding in positive and negative polarizations with (100) and (111) planes, then boosting water reduction and oxidation kinetics separately at (100) and (111) planes. Additonally, zinc-/cobalt-based superhygroscopic hydrogels serve as a water-capturing "hand" to harness humidity from the ambient environment. The integrated hydrogel-Cu2 O@BaTiO3 hybrid is used to dehumidify air, which can split 36.5 mg of water by employing only 150 mg hydrogel and simultaneously generate a photocurrent of 224.3 µA cm-2 under 10 mW cm-2 illumination.
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Affiliation(s)
- Lin Yang
- Department of Materials Science and Engineering, National University of Singapore, 9 Engineering drive 1, Singapore, 117574, Singapore
| | - Sai Kishore Ravi
- Department of Materials Science and Engineering, National University of Singapore, 9 Engineering drive 1, Singapore, 117574, Singapore
| | - Dilip Krishna Nandakumar
- Department of Materials Science and Engineering, National University of Singapore, 9 Engineering drive 1, Singapore, 117574, Singapore
| | - Fuad Indra Alzakia
- Department of Materials Science and Engineering, National University of Singapore, 9 Engineering drive 1, Singapore, 117574, Singapore
| | - Wanheng Lu
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
| | - Yaoxin Zhang
- Department of Materials Science and Engineering, National University of Singapore, 9 Engineering drive 1, Singapore, 117574, Singapore
| | - Jiachen Yang
- Department of Materials Science and Engineering, National University of Singapore, 9 Engineering drive 1, Singapore, 117574, Singapore
| | - Qian Zhang
- Department of Materials Science and Engineering, National University of Singapore, 9 Engineering drive 1, Singapore, 117574, Singapore
| | - Xueping Zhang
- Department of Materials Science and Engineering, National University of Singapore, 9 Engineering drive 1, Singapore, 117574, Singapore
| | - Swee Ching Tan
- Department of Materials Science and Engineering, National University of Singapore, 9 Engineering drive 1, Singapore, 117574, Singapore
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18
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Li L, Xie L, Pan X. Real-time studies of ferroelectric domain switching: a review. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2019; 82:126502. [PMID: 31185460 DOI: 10.1088/1361-6633/ab28de] [Citation(s) in RCA: 22] [Impact Index Per Article: 4.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Ferroelectric materials have been utilized in a broad range of electronic, optical, and electromechanical applications and hold the promise for the design of future high-density nonvolatile memories and multifunctional nano-devices. The applications of ferroelectric materials stem from the ability to switch polarized domains by applying an electric field, and therefore a fundamental understanding of the switching dynamics is critical for design of practical devices. In this review, we summarize the progress in the study of the microscopic process of ferroelectric domain switching using recently developed in situ transmission electron microscopy (TEM). We first briefly introduce the instrumentation, experimental procedures, imaging mechanisms, and analytical methods of the state-of-the-art in situ TEM techniques. The application of these techniques to studying a wide range of complex switching phenomena, including domain nucleation, domain wall motion, domain relaxation, domain-defect interaction, and the interplay between different types of domains, is demonstrated. The underlying physics of these dynamic processes are discussed.
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Affiliation(s)
- Linze Li
- Department of Materials Science and Engineering, University of California, Irvine, CA 92697, United States of America
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19
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Zhang Y, Lu H, Yan X, Cheng X, Xie L, Aoki T, Li L, Heikes C, Lau SP, Schlom DG, Chen L, Gruverman A, Pan X. Intrinsic Conductance of Domain Walls in BiFeO 3. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1902099. [PMID: 31353633 DOI: 10.1002/adma.201902099] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/02/2019] [Revised: 06/30/2019] [Indexed: 06/10/2023]
Abstract
Ferroelectric domain walls exhibit a number of new functionalities that are not present in their host material. One of these functional characteristics is electrical conductivity that may lead to future device applications. Although progress has been made, the intrinsic conductivity of BiFeO3 domain walls is still elusive. Here, the intrinsic conductivity of 71° and 109° domain walls is reported by probing the local conductance over a cross section of the BiFeO3 /TbScO3 (001) heterostructure. Through a combination of conductive atomic force microscopy, high-resolution electron energy loss spectroscopy, and phase-field simulations, it is found that the 71° domain wall has an inherently charged nature, while the 109° domain wall is close to neutral. Hence, the intrinsic conductivity of the 71° domain walls is an order of magnitude larger than that of the 109° domain walls associated with bound-charge-induced bandgap lowering. Furthermore, the interaction of adjacent 71° domain walls and domain wall curvature leads to a variation of the charge distribution inside the walls, and causes a discontinuity of potential in the [110]p direction, which results in an alternative conductivity of the neighboring 71° domain walls, and a low conductivity of the 71° domain walls when measurement is taken from the film top surface.
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Affiliation(s)
- Yi Zhang
- Department of Materials Science and Engineering, University of California Irvine, Irvine, CA, 92697, USA
| | - Haidong Lu
- Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, NE, 68588, USA
| | - Xingxu Yan
- Department of Materials Science and Engineering, University of California Irvine, Irvine, CA, 92697, USA
| | - Xiaoxing Cheng
- Department of Materials Science and Engineering, Pennsylvania State University, State College, PA, 16802, USA
| | - Lin Xie
- Department of Materials Science and Engineering, University of California Irvine, Irvine, CA, 92697, USA
| | - Toshihiro Aoki
- Irvine Materials Research Institute, University of California, Irvine, CA, 92697, USA
| | - Linze Li
- Department of Materials Science and Engineering, University of California Irvine, Irvine, CA, 92697, USA
| | - Colin Heikes
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY, 14850, USA
| | - Shu Ping Lau
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, 999077, Hong Kong
| | - Darrell G Schlom
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY, 14850, USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY, 14853, USA
| | - Longqing Chen
- Department of Materials Science and Engineering, Pennsylvania State University, State College, PA, 16802, USA
| | - Alexei Gruverman
- Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, NE, 68588, USA
| | - Xiaoqing Pan
- Department of Materials Science and Engineering, University of California Irvine, Irvine, CA, 92697, USA
- Department of Physics and Astronomy, University of California, Irvine, CA, 92697, USA
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20
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Huyan H, Li L, Addiego C, Gao W, Pan X. Structures and electronic properties of domain walls in BiFeO 3 thin films. Natl Sci Rev 2019; 6:669-683. [PMID: 34691922 PMCID: PMC8291563 DOI: 10.1093/nsr/nwz101] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/14/2019] [Revised: 07/12/2019] [Accepted: 07/14/2019] [Indexed: 11/14/2022] Open
Abstract
Domain walls (DWs) in ferroelectrics are atomically sharp and can be created, erased, and reconfigured within the same physical volume of ferroelectric matrix by external electric fields. They possess a myriad of novel properties and functionalities that are absent in the bulk of the domains, and thus could become an essential element in next-generation nanodevices based on ferroelectrics. The knowledge about the structure and properties of ferroelectric DWs not only advances the fundamental understanding of ferroelectrics, but also provides guidance for the design of ferroelectric-based devices. In this article, we provide a review of structures and properties of DWs in one of the most widely studied ferroelectric systems, BiFeO3 thin films. We correlate their conductivity and photovoltaic properties to the atomic-scale structure and dynamic behaviors of DWs.
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Affiliation(s)
- Huaixun Huyan
- Department of Materials Science and Engineering, University of California, Irvine, CA 92697, USA
| | - Linze Li
- Department of Materials Science and Engineering, University of California, Irvine, CA 92697, USA
| | - Christopher Addiego
- Department of Physics and Astronomy, University of California, Irvine, CA 92697, USA
| | - Wenpei Gao
- Department of Materials Science and Engineering, University of California, Irvine, CA 92697, USA
| | - Xiaoqing Pan
- Department of Materials Science and Engineering, University of California, Irvine, CA 92697, USA.,Department of Physics and Astronomy, University of California, Irvine, CA 92697, USA.,Irvine Materials Research Institute, University of California, Irvine, CA 92697, USA
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21
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Akbarian D, Yilmaz DE, Cao Y, Ganesh P, Dabo I, Munro J, Van Ginhoven R, van Duin ACT. Understanding the influence of defects and surface chemistry on ferroelectric switching: a ReaxFF investigation of BaTiO 3. Phys Chem Chem Phys 2019; 21:18240-18249. [PMID: 31393478 DOI: 10.1039/c9cp02955a] [Citation(s) in RCA: 31] [Impact Index Per Article: 6.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/19/2022]
Abstract
Ferroelectric materials such as barium titanate (BaTiO3) have a wide range of applications in nano scale electronic devices due to their outstanding properties. In this study, we developed an easily extendable atomistic ReaxFF reactive force field for BaTiO3 that can capture both its field- and temperature-induced ferroelectric hysteresis and corresponding changes due to surface chemistry and bulk defects. Using our force field, we were able to reproduce and explain a number of experimental observations: (1) the existence of a critical thickness of 4.8 nm below which ferroelectricity vanishes in BaTiO3; (2) migration and clustering of oxygen vacancies (OVs) in BaTiO3 and a reduction in the polarization and the Curie temperature due to the OVs; (3) domain wall interaction with the surface chemistry to influence the ferroelectric switching and polarization magnitude. This new computational tool opens up a wide range of possibilities for making predictions for realistic ferroelectric interfaces in energy-conversion, electronic and neuromorphic systems.
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Affiliation(s)
- Dooman Akbarian
- Department of Mechanical Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, USA.
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