Anisotropic polarization-induced conductance at a ferroelectric-insulator interface

Intrinsic Elastomer with Remarkable Dielectric Constant via Elastification of Relaxor Ferroelectric Polymer

High-dielectric-constant elastomers always play a critical role in the development of wearable electronics for actuation, energy storage, and sensing; therefore, there is an urgent need for effective strategies to enhance dielectric constants. The present methods mainly involve adding inorganic or conductive fillers to the polymer elastomers, however, the addition of fillers causes a series of problems, such as large dielectric loss, increased modulus, and deteriorating interface conditions. Here, the elastification of relaxor ferroelectric polymers is investigated through slight cross-linking, aiming to obtain intrinsic elastomers with high-dielectric constants. By cross-linking of the relaxor ferroelectric polymer poly(vinylidene fluoride-ter-trifluoroethylene-ter-chlorofluoroethylene) with a long soft chain cross-linker, a relaxor ferroelectric elastomer with an enhanced dielectric constant is obtained, twice that of the pristine relaxor ferroelectric polymer and surpassing all reported intrinsic elastomers. This elastomer maintains its high-dielectric constant over a wide temperature range and exhibits robust mechanical fatigue resistance, chemical stability, and thermal stability. Moreover, the ferroelectricity of the elastomer remains stable under strains up to 80%. This study offers a simple and effective way to enhance the dielectric constant of intrinsic elastomers, thus facilitating advancements in soft robots, biosensors, and wearable electronics.

The Investigation of Neuromimetic Dynamics in Ferroelectrics via In Situ TEM

The core task of neuromorphic devices is to effectively simulate the behavior of neurons and synapses. Based on the functionality of ferroelectric domains with the advantages of low power consumption and high-speed response, great progress has been made in realizing neuromimetic behaviors such as ferroelectric synaptic devices. However, the correlation between the ferroelectric domain dynamics and neuromimetic behavior remains unclear. Here, we reveal the correlation between domain/domain wall dynamics and neuromimetic behaviors from a microscopic perspective in real-time by using high temporal and spatial resolution in situ transmission electron microscopy. Furthermore, we propose utilizing ferroelectric microstructures for the simultaneous simulation of neuronal and synaptic plasticity, which is expected to improve the integration and performance of ferroelectric neuromorphic devices. We believe that this work to study neuromimetic behavior from the perspective of domain dynamics is instructive for the development of ferroelectric neuromorphic devices.

Phase Conductance of BiFeO3 Film

In this work, the local conductance of the tetragonal-like (T-like) and rhombohedral-like (R-like) phases of epitaxial BiFeO3 film is systematically studied via conductive atomic force microscopy. At higher tip voltage, there is a mutual transition between the T-like and R-like phases, which could be attributed to the strain relaxation in the T-like phase induced by electric poling, as well as local polarization switching. The T-like phase exhibits a higher conductance, which is related to the lower interface potential barrier between the tip and film surface. Reversible low- and high-current states in the T-like phase can be tuned by polarization switching. These results will be helpful for designing novel nanoelectronic devices, such as voltage and strain sensors.

Intrinsically elastic polymer ferroelectric by precise slight cross-linking

Ferroelectrics are an integral component of the modern world and are of importance in electrics, electronics, and biomedicine. However, their usage in emerging wearable electronics is limited by inelastic deformation. We developed intrinsically elastic ferroelectrics by combining ferroelectric response and elastic resilience into one material by slight cross-linking of plastic ferroelectric polymers. The precise slight cross-linking can realize the complex balance between crystallinity and resilience. Thus, we obtained an elastic ferroelectric with a stable ferroelectric response under mechanical deformation up to 70% strain. This elastic ferroelectric exerts potentials in applications related to wearable electronics, such as elastic ferroelectric sensors, information storage, and energy transduction.

Magneto-Electric-Optical Coupling in Multiferroic BiFeO3 -Based Films

Manipulating ferroic orders and realizing their coupling in multiferroics at room temperature are promising for designing future multifunctional devices. Single external stimulation has been extensively proved to demonstrate the ability of ferroelastic switching in multiferroic oxides, which is crucial to bridge the ferroelectricity and magnetism. However, it is still challenging to directly realize multi-field-driven magnetoelectric coupling in multiferroic oxides as potential multifunctional electrical devices. Here, novel magneto-electric-optical coupling in multiferroic BiFeO₃ -based thin films at room temperature mediated by deterministic ferroelastic switching using piezoresponse/magnetic force microscopy and aberration-corrected transmission electron microscopy are shown. Reversible photoinduced ferroelastic switching exhibiting magnetoelectric responses is confirmed in BiFeO₃ -based films, which works at flexible strain states. This work directly demonstrates room-temperature magneto-electric-optical coupling in multiferroic films, which provides a framework for designing potential multi-field-driven magnetoelectric devices such as energy conservation memories.

Suppression of metal-to-insulator transition using strong interfacial coupling at cubic and orthorhombic perovskite oxide heterointerfaces

A quasi-two-dimensional electron gas (2DEG) evolved at the LaAlO3 (LAO)/SrTiO3 (STO) interface has attracted significant attention, because the insertion of perovskite titanates can tune the 2DEG conductivity. However, this depends on the Ti-O-Ti bonding angle and structural symmetry. In this study, we controlled the octahedral tilt of the LAO/CaTiO3 (CTO) interface by heterostructuring it with CTO grown on STO substrates of various thicknesses. The 2DEG was maintained when the thickness of CTO was below the critical thickness of 5 unit cells (uc); however, it was suppressed when the CTO thickness was above the critical thickness. High-angle annular dark-field (HAADF) scanning transmission electron microscopy (STEM) combined with integrated differential phase contrast (iDPC) STEM imaging was used to visualize the TiO6 octahedral tilt propagation and symmetry of the 5 uc and 24 uc CTO films. The symmetry of the 5 uc CTO film resembled that of the STO substrate, whereas the octahedral tilt propagated in the 24 uc CTO film due to the structural relaxation. These results show that the interface engineering of the octahedral tilt can enable or suppress the formation of the 2DEG in perovskite oxides.

Electric Polarization Switching on an Atomically Thin Metallic Oxide

Materials with reduced dimensions have been shown to host a wide variety of exotic properties and novel quantum states that often defy textbook wisdom. Polarization switching and metallic screening are well-known examples of mutually exclusive properties that cannot coexist in bulk solids. Here we report the fabrication of (SrRuO₃)₁/(BaTiO₃)₁₀ superlattices that exhibits reversible polarization switching in an atomically thin metallic layer. A multipronged investigation combining structural analyses, electrical measurements, and first-principles electronic structure calculations unravels the coexistence of two-dimensional (2D) metallicity in the SrRuO₃ layer accompanied by the breaking of inversion symmetry, supporting electric polarization along the out-of-plane direction. Such a 2D ferroelectric-like metal paves a novel way to engineer a quantum multistate with unusual coexisting properties, such as ferroelectrics and metals, manipulated by external fields.

Negative-Pressure-Induced Large Polarization in Nanosized PbTiO3

Ferroelectric materials usually undergo decay with particle size decreasing into the nanoscale. At the critical value, the crystal structure undergoes a transition from the ferroelectric to paraelectric phase and the ferroelectricity vanishes. It is a big issue to sufficiently maintain strong ferroelectricity at the nanoscale. Herein, it is reported that synthesized 0D freestanding PbTiO₃ nanoparticles (NPs) present negative pressure along the c axis (Δc/c_bulk × 100% = -2.406), inducing large spontaneous polarization P_S (71.2 µC cm^-2 in 12 nm). Further local structural studies by atomic pair distribution functions and extended X-ray absorption fine structure indicate the structural evolution of nanosized PbTiO₃ . High-angle annular dark-field STEM images reveal the existence of preponderant PbO-terminations on the surface of the PbTiO₃ NPs. Ab initio calculation reveals the enhanced hybridization between Pb and O ions, which gives rise to the negative pressure and tensile stress to stabilize the high tetragonality and large polarization. The present work demonstrates an untraditional route to enhance the ferroelectricity and related properties in functional nanostructured materials, being of significance to nanodevices.

Electrostatics and domains in ferroelectric superlattices

The electrostatics arising in ferroelectric/dielectric two-dimensional heterostructures and superlattices is revisited within a Kittel model in order to define and complete a clear paradigmatic reference for domain formation. The screening of the depolarizing field in isolated ferroelectric or polar thin films via the formation of 180° domains is well understood, where the width of the domains w grows as the square-root of the film thickness d, following Kittel's Law for thick enough films (w ≪ d). For thinner films, a minimum is reached for w before diverging to a monodomain. Although this behaviour is known to be qualitatively unaltered when the dielectric environment of the film is modified, we consider the quantitative changes in that behaviour induced on the ferroelectric film by different dielectric settings: as deposited on a dielectric substrate, sandwiched between dielectrics, and in a superlattice of alternating ferroelectric/dielectric films. The model assumes infinitely thin domain walls, and therefore is not expected to be reliable for film thickness in the nanometre scale. The polarization field P(r) does vary in space, deviating from ±P _S , following the depolarizing field in linear response, but the model does not include a polarization-gradient term as would appear in a Ginzburg-Landau free energy. The model is, however, worth characterizing, both as paradigmatic reference, and as applicable to not-so-thin films. The correct renormalization of parameters is obtained for the thick-film square-root behaviour in the mentioned settings, and the sub-Kittel regime is fully characterized. New results are presented alongside well-known ones for a comprehensive description. Among the former, a natural separation between strong and weak ferroelectric coupling in superlattices is found, which depends exclusively on the dielectric anisotropy of the ferroelectric layer.

Flexoelectronics of centrosymmetric semiconductors

Interface engineering by local polarization using piezoelectric^1-4, pyroelectric^5,6 and ferroelectric^7-9 effects has attracted considerable attention as a promising approach for tunable electronics/optoelectronics, human-machine interfacing and artificial intelligence. However, this approach has mainly been applied to non-centrosymmetric semiconductors, such as wurtzite-structured ZnO and GaN, limiting its practical applications. Here we demonstrate an electronic regulation mechanism, the flexoelectronics, which is applicable to any semiconductor type, expanding flexoelectricity^10-13 to conventional semiconductors such as Si, Ge and GaAs. The inner-crystal polarization potential generated by the flexoelectric field serving as a 'gate' can be used to modulate the metal-semiconductor interface Schottky barrier and further tune charge-carrier transport. We observe a giant flexoelectronic effect in bulk centrosymmetric semiconductors of Si, TiO₂ and Nb-SrTiO₃ with high strain sensitivity (>2,650), largely outperforming state-of-the-art Si-nanowire strain sensors and even piezoresistive, piezoelectric and ferroelectric nanodevices¹⁴. The effect can be used to mechanically switch the electronics in the nanoscale with fast response (<4 ms) and high resolution (~0.78 nm). This opens up the possibility of realizing strain-modulated electronics in centrosymmetric semiconductors, paving the way for local polarization field-controlled electronics and high-performance electromechanical applications.

Structure, Performance, and Application of BiFeO3 Nanomaterials

Multiferroic nanomaterials have attracted great interest due to simultaneous two or more properties such as ferroelectricity, ferromagnetism, and ferroelasticity, which can promise a broad application in multifunctional, low-power consumption, environmentally friendly devices. Bismuth ferrite (BiFeO3, BFO) exhibits both (anti)ferromagnetic and ferroelectric properties at room temperature. Thus, it has played an increasingly important role in multiferroic system. In this review, we systematically discussed the developments of BFO nanomaterials including morphology, structures, properties, and potential applications in multiferroic devices with novel functions. Even the opportunities and challenges were all analyzed and summarized. We hope this review can act as an updating and encourage more researchers to push on the development of BFO nanomaterials in the future.

Two-Dimensional Ferroelastic Semiconductors in Nb2SiTe4 and Nb2GeTe4 with Promising Electronic Properties

Two-dimensional crystals with coupling of ferroelasticity and attractive electronic properties offer unprecedented opportunities for achieving long-sought controllable devices. However, to date, the reported proposals are mainly based on hypothetical structures. Here, using first-principles calculations, we identify single-layer Nb₂ATe₄ (A = Si, Ge), which can be exfoliated from its layered bulk, as a promising candidate. Single-layer Nb₂ATe₄ is found to be dynamically, thermally, and chemically stable. It possesses excellent ferroelasticity with high reversible ferroelastic strain and a moderate ferroelastic transition energy barrier, which are beneficial for practical applications. Meanwhile, it harbors outstanding anisotropic electronic properties, including anisotropic carrier mobility and optical properties. More importantly, the anisotropic properties of single-layer Nb₂ATe₄ can be efficiently controlled through ferroelastic switching. These appealing properties combined with the experimental feasibility render single-layer Nb₂ATe₄ an extraordinary platform for realizing controllable devices.

Progress in BiFeO3-based heterostructures: materials, properties and applications

BiFeO3-based heterostructures have attracted much attention for potential applications due to their room-temperature multiferroic properties, proper band gaps and ultrahigh ferroelectric polarization of BiFeO3, such as data storage, optical utilization in visible light regions and synapse-like function. Here, this work aims to offer a systematic review on the progress of BiFeO3-based heterostructures. In the first part, the optical, electric, magnetic, and valley properties and their interactions in BiFeO3-based heterostructures are briefly reviewed. In the second part, the morphologies of BiFeO3 and medium materials in the heterostructures are discussed. Particularly, in the third part, the physical properties and underlying mechanism in BiFeO3-based heterostructures are discussed thoroughly, such as the photovoltaic effect, electric field control of magnetism, resistance switching, and two-dimensional electron gas and valley characteristics. The fourth part illustrates the applications of BiFeO3-based heterostructures based on the materials and physical properties discussed in the second and third parts. This review also includes a future prospect, which can provide guidance for exploring novel physical properties and designing multifunctional devices.

A Hybrid Artificial Photocatalysis System Splits Atmospheric Water for Simultaneous Dehumidification and Power Generation

A new approach for artificial photocatalysis of electrical generation directly from atmospheric water is reported. A hybrid system comprising a hydrogel incorporated with Cu₂ O and BaTiO₃ nanoparticles is developed, wherein the Cu₂ O is designed to expose two different crystal planes, namely (100) and (111). These planes exhibit different surface potentials and form a polarization electric field of 2.3 kV cm^-1 that acts on a ferroelectric dipole. With the help of this electric field, the dipole is redirected for aiding in positive and negative polarizations with (100) and (111) planes, then boosting water reduction and oxidation kinetics separately at (100) and (111) planes. Additonally, zinc-/cobalt-based superhygroscopic hydrogels serve as a water-capturing "hand" to harness humidity from the ambient environment. The integrated hydrogel-Cu₂ O@BaTiO₃ hybrid is used to dehumidify air, which can split 36.5 mg of water by employing only 150 mg hydrogel and simultaneously generate a photocurrent of 224.3 µA cm^-2 under 10 mW cm^-2 illumination.

Real-time studies of ferroelectric domain switching: a review

Ferroelectric materials have been utilized in a broad range of electronic, optical, and electromechanical applications and hold the promise for the design of future high-density nonvolatile memories and multifunctional nano-devices. The applications of ferroelectric materials stem from the ability to switch polarized domains by applying an electric field, and therefore a fundamental understanding of the switching dynamics is critical for design of practical devices. In this review, we summarize the progress in the study of the microscopic process of ferroelectric domain switching using recently developed in situ transmission electron microscopy (TEM). We first briefly introduce the instrumentation, experimental procedures, imaging mechanisms, and analytical methods of the state-of-the-art in situ TEM techniques. The application of these techniques to studying a wide range of complex switching phenomena, including domain nucleation, domain wall motion, domain relaxation, domain-defect interaction, and the interplay between different types of domains, is demonstrated. The underlying physics of these dynamic processes are discussed.

Intrinsic Conductance of Domain Walls in BiFeO3

Ferroelectric domain walls exhibit a number of new functionalities that are not present in their host material. One of these functional characteristics is electrical conductivity that may lead to future device applications. Although progress has been made, the intrinsic conductivity of BiFeO₃ domain walls is still elusive. Here, the intrinsic conductivity of 71° and 109° domain walls is reported by probing the local conductance over a cross section of the BiFeO₃ /TbScO₃ (001) heterostructure. Through a combination of conductive atomic force microscopy, high-resolution electron energy loss spectroscopy, and phase-field simulations, it is found that the 71° domain wall has an inherently charged nature, while the 109° domain wall is close to neutral. Hence, the intrinsic conductivity of the 71° domain walls is an order of magnitude larger than that of the 109° domain walls associated with bound-charge-induced bandgap lowering. Furthermore, the interaction of adjacent 71° domain walls and domain wall curvature leads to a variation of the charge distribution inside the walls, and causes a discontinuity of potential in the [110]_p direction, which results in an alternative conductivity of the neighboring 71° domain walls, and a low conductivity of the 71° domain walls when measurement is taken from the film top surface.

Structures and electronic properties of domain walls in BiFeO3 thin films

Domain walls (DWs) in ferroelectrics are atomically sharp and can be created, erased, and reconfigured within the same physical volume of ferroelectric matrix by external electric fields. They possess a myriad of novel properties and functionalities that are absent in the bulk of the domains, and thus could become an essential element in next-generation nanodevices based on ferroelectrics. The knowledge about the structure and properties of ferroelectric DWs not only advances the fundamental understanding of ferroelectrics, but also provides guidance for the design of ferroelectric-based devices. In this article, we provide a review of structures and properties of DWs in one of the most widely studied ferroelectric systems, BiFeO₃ thin films. We correlate their conductivity and photovoltaic properties to the atomic-scale structure and dynamic behaviors of DWs.

Understanding the influence of defects and surface chemistry on ferroelectric switching: a ReaxFF investigation of BaTiO3

Ferroelectric materials such as barium titanate (BaTiO3) have a wide range of applications in nano scale electronic devices due to their outstanding properties. In this study, we developed an easily extendable atomistic ReaxFF reactive force field for BaTiO3 that can capture both its field- and temperature-induced ferroelectric hysteresis and corresponding changes due to surface chemistry and bulk defects. Using our force field, we were able to reproduce and explain a number of experimental observations: (1) the existence of a critical thickness of 4.8 nm below which ferroelectricity vanishes in BaTiO3; (2) migration and clustering of oxygen vacancies (OVs) in BaTiO3 and a reduction in the polarization and the Curie temperature due to the OVs; (3) domain wall interaction with the surface chemistry to influence the ferroelectric switching and polarization magnitude. This new computational tool opens up a wide range of possibilities for making predictions for realistic ferroelectric interfaces in energy-conversion, electronic and neuromorphic systems.