1
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Wu Y, Deng L, Yin X, Tong J, Tian F, Zhang X. Valley-Related Multipiezo Effect and Noncollinear Spin Current in an Altermagnet Fe 2Se 2O Monolayer. NANO LETTERS 2024; 24:10534-10539. [PMID: 39145607 DOI: 10.1021/acs.nanolett.4c02554] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/16/2024]
Abstract
An altermagnet exhibits many novel physical phenomena because of its intrinsic antiferromagnetic coupling and natural band spin splitting, which are expected to give rise to new types of magnetic electronic components. In this study, an Fe2Se2O monolayer is proven to be an altermagnet with out-of-plane magnetic anisotropy, and its Néel temperature is determined to be 319 K. The spin splitting of the Fe2Se2O monolayer reaches 860 meV. Moreover, an Fe2Se2O monolayer presents a pair of energy valleys, which can be polarized and reversed by applying uniaxial strains along different directions, resulting in a piezovalley effect. Under the strain, the net magnetization can be induced in the Fe2Se2O monolayer by doping with holes, thereby realizing a piezomagnetic property. Interestingly, noncollinear spin current can be generated by applying an in-plane electric field on an unstrained Fe2Se2O monolayer doped with 0.2 hole/formula unit. These excellent physical properties make the Fe2Se2O monolayer a promising candidate for multifunctional spintronic and valleytronic devices.
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Affiliation(s)
- Yanzhao Wu
- Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Material Science and Engineering, Northeastern University, Shenyang 110819, China
| | - Li Deng
- Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Material Science and Engineering, Northeastern University, Shenyang 110819, China
| | - Xiang Yin
- Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Material Science and Engineering, Northeastern University, Shenyang 110819, China
| | - Junwei Tong
- Department of Physics, Freie Universität Berlin, Berlin 14195, Germany
| | - Fubo Tian
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China
| | - Xianmin Zhang
- Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Material Science and Engineering, Northeastern University, Shenyang 110819, China
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2
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Song H, Chen S, Sun X, Cui Y, Yildirim T, Kang J, Yang S, Yang F, Lu Y, Zhang L. Enhancing 2D Photonics and Optoelectronics with Artificial Microstructures. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2403176. [PMID: 39031754 PMCID: PMC11348073 DOI: 10.1002/advs.202403176] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/26/2024] [Revised: 06/04/2024] [Indexed: 07/22/2024]
Abstract
By modulating subwavelength structures and integrating functional materials, 2D artificial microstructures (2D AMs), including heterostructures, superlattices, metasurfaces and microcavities, offer a powerful platform for significant manipulation of light fields and functions. These structures hold great promise in high-performance and highly integrated optoelectronic devices. However, a comprehensive summary of 2D AMs remains elusive for photonics and optoelectronics. This review focuses on the latest breakthroughs in 2D AM devices, categorized into electronic devices, photonic devices, and optoelectronic devices. The control of electronic and optical properties through tuning twisted angles is discussed. Some typical strategies that enhance light-matter interactions are introduced, covering the integration of 2D materials with external photonic structures and intrinsic polaritonic resonances. Additionally, the influences of external stimuli, such as vertical electric fields, enhanced optical fields and plasmonic confinements, on optoelectronic properties is analysed. The integrations of these devices are also thoroughly addressed. Challenges and future perspectives are summarized to stimulate research and development of 2D AMs for future photonics and optoelectronics.
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Affiliation(s)
- Haizeng Song
- Henan Key Laboratory of Rare Earth Functional MaterialsZhoukou Normal UniversityZhoukou466001China
- College of Physics, Nanjing University of Aeronautics and AstronauticsKey Laboratory of Aerospace Information Materials and Physics (NUAA), MIITNanjing211106China
| | - Shuai Chen
- College of Physics, Nanjing University of Aeronautics and AstronauticsKey Laboratory of Aerospace Information Materials and Physics (NUAA), MIITNanjing211106China
| | - Xueqian Sun
- School of Engineering, College of Engineering and Computer Sciencethe Australian National UniversityCanberraACT2601Australia
| | - Yichun Cui
- National Key Laboratory of Science and Technology on Test Physics and Numerical MathematicsBeijing100190China
| | - Tanju Yildirim
- Faculty of Science and EngineeringSouthern Cross UniversityEast LismoreNSW2480Australia
| | - Jian Kang
- College of Physics, Nanjing University of Aeronautics and AstronauticsKey Laboratory of Aerospace Information Materials and Physics (NUAA), MIITNanjing211106China
| | - Shunshun Yang
- College of Physics, Nanjing University of Aeronautics and AstronauticsKey Laboratory of Aerospace Information Materials and Physics (NUAA), MIITNanjing211106China
| | - Fan Yang
- College of Physics, Nanjing University of Aeronautics and AstronauticsKey Laboratory of Aerospace Information Materials and Physics (NUAA), MIITNanjing211106China
| | - Yuerui Lu
- School of Engineering, College of Engineering and Computer Sciencethe Australian National UniversityCanberraACT2601Australia
| | - Linglong Zhang
- College of Physics, Nanjing University of Aeronautics and AstronauticsKey Laboratory of Aerospace Information Materials and Physics (NUAA), MIITNanjing211106China
- Laboratory of Solid State MicrostructuresNanjing UniversityNanjing210093China
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3
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Chang Y, Zhang Z, Deng L, Wu Y, Zhang X. Ferrovalley and Quantum Anomalous Hall Effect in Janus TiTeCl Monolayer. MATERIALS (BASEL, SWITZERLAND) 2024; 17:3331. [PMID: 38998413 PMCID: PMC11243056 DOI: 10.3390/ma17133331] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/11/2024] [Revised: 06/30/2024] [Accepted: 07/03/2024] [Indexed: 07/14/2024]
Abstract
Ferrovalley materials are garnering significant interest for their potential roles in advancing information processing and enhancing data storage capabilities. This study utilizes first-principles calculations to determine that the Janus monolayer TiTeCl exhibits the properties of a ferrovalley semiconductor. This material demonstrates valley polarization with a notable valley splitting of 80 meV. Additionally, the Berry curvature has been computed across the first Brillouin zone of the monolayer TiTeCl. The research also highlights that topological phase transitions ranging from ferrovalley and half-valley metals to quantum anomalous Hall effect states can occur in monolayer TiTeCl under compressive strains ranging from -1% to 0%. Throughout these strain changes, monolayer TiTeCl maintains its ferromagnetic coupling. These characteristics make monolayer TiTeCl a promising candidate for the development of new valleytronic and topological devices.
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Affiliation(s)
- Yufang Chang
- Public Basic Department, Shenyang Conservatory of Music, Shenyang 110818, China;
| | - Zhijun Zhang
- School of Electrical and Automation Engineering, Liaoning Institute of Science and Technology, Benxi 117004, China;
| | - Li Deng
- School of Material Science and Engineering, Northeastern University, Shenyang 110819, China; (L.D.); (Y.W.)
| | - Yanzhao Wu
- School of Material Science and Engineering, Northeastern University, Shenyang 110819, China; (L.D.); (Y.W.)
| | - Xianmin Zhang
- School of Material Science and Engineering, Northeastern University, Shenyang 110819, China; (L.D.); (Y.W.)
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4
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Wan Z, Chen Z, Shi L, Zheng A, Min J, Shen C, Du B, Guo Y, Gao X, Yin J, Ge H, Niu S, Lu H, Yin K, Wu D, Liu Z, Xia Y. Room-Temperature Growth of Square-Millimeter Single-Crystalline Two-Dimensional Metal Halides on Silicon. ACS NANO 2024; 18:15096-15106. [PMID: 38810232 DOI: 10.1021/acsnano.4c02336] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2024]
Abstract
Silicon is the cornerstone of electronics and photonics. In this context, almost all integrated devices derived from two-dimensional (2D) materials stay rooted in silicon technology. However, as the growth substrate, silicon has long been thought to be a hindrance for growing 2D materials through bottom-up methods that require high growth temperatures, and thus, indirect routes are usually considered instead. Although promising growth of large-area 2D materials on silicon has been demonstrated, the direct growth of single-crystalline materials using low-thermal-budget synthesis methods remains challenging. Here, we report the room-temperature growth of millimeter-scale single-crystal 2D metal halides on silicon substrates with a hydroxyl-terminated surface. Theoretical calculations reveal that the activation energy for surface diffusion can be reduced by an order of magnitude by terminating the surface with hydroxyl groups, from which on-silicon growth is greatly facilitated at room temperature and enables a 4-order-of-magnitude increase in area. The high quality and uniformity of the resulting single crystals are further evidenced. The optoelectronic devices employing the as-grown materials show an ultralow dark current of 10-13 A and a high detectivity of 1013 Jones, thereby corroborating a weak-light detection ability. These results would point to a rich space of surface modulation that can be used to surmount current limitations and demonstrate a promising strategy for growing 2D materials directly on silicon at room temperature to produce large single crystals.
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Affiliation(s)
- Zuteng Wan
- Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Zhiwen Chen
- Department of Materials Science and Engineering, University of Toronto, Toronto, Ontario M5S3E4, Canada
| | - Lei Shi
- Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
| | - Anqi Zheng
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing 210096, China
| | - Jin Min
- Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Cong Shen
- Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Bingfeng Du
- Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Yanhua Guo
- College of Materials Science and Engineering, Tech Institute for Advanced Materials, Nanjing Tech University, Nanjing 211816, China
| | - Xu Gao
- Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou 215123, China
| | - Jiang Yin
- Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Haixiong Ge
- Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Shanyuan Niu
- Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Haiming Lu
- Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Kuibo Yin
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing 210096, China
| | - Di Wu
- Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Zhiguo Liu
- Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Yidong Xia
- Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
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5
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Hu Z, Wang H, Wang L, Wang H. A new charge transfer pathway in the MoSe 2-WSe 2 heterostructure under the conditions of B-excitons being resonantly pumped. Phys Chem Chem Phys 2024; 26:9424-9431. [PMID: 38446138 DOI: 10.1039/d3cp05282f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/07/2024]
Abstract
Most transition metal dichalcogenide (TMD) heterostructures (HSs) exhibit a type II band alignment, leading to a charge transfer process accompanied by the transfer of spin-valley polarization and spontaneous formation of interlayer excitons. This unique band structure facilitates achieving a longer exciton lifetime and extended spin-valley polarization lifetime. However, the mechanism of charge transfer in type II TMD HSs is not fully comprehended. Here, the ultrafast charge transfer process is studied in MoSe2-WSe2 HS via valley-solved broadband pump-probe spectroscopy. Under the conditions of B-excitons of WSe2 and MoSe2 being resonantly pumped, a new charge transfer pathway through the higher energy state associated with the B-exciton is found. Meanwhile, the holes (electrons) in the WSe2 (MoSe2) layer of MoSe2-WSe2 HS produce obvious spin-valley polarization even under the condition of B-exciton of WSe2 (MoSe2) being resonantly pumped, and the lifetime can reach tens of ps, which is in stark contrast to the absence of A-exciton spin-valley polarization in monolayer WSe2 (MoSe2) under the same pumping condition. The results deepen the insight into the charge transfer process in type II TMD HSs and show the great potential of TMD HSs in the application of spin-valley electronics devices.
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Affiliation(s)
- Zifan Hu
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China.
| | - Hai Wang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China.
| | - Lei Wang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China.
| | - Haiyu Wang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China.
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6
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Pettine J, Padmanabhan P, Shi T, Gingras L, McClintock L, Chang CC, Kwock KWC, Yuan L, Huang Y, Nogan J, Baldwin JK, Adel P, Holzwarth R, Azad AK, Ronning F, Taylor AJ, Prasankumar RP, Lin SZ, Chen HT. Light-driven nanoscale vectorial currents. Nature 2024; 626:984-989. [PMID: 38326619 PMCID: PMC10901733 DOI: 10.1038/s41586-024-07037-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/11/2023] [Accepted: 01/05/2024] [Indexed: 02/09/2024]
Abstract
Controlled charge flows are fundamental to many areas of science and technology, serving as carriers of energy and information, as probes of material properties and dynamics1 and as a means of revealing2,3 or even inducing4,5 broken symmetries. Emerging methods for light-based current control5-16 offer particularly promising routes beyond the speed and adaptability limitations of conventional voltage-driven systems. However, optical generation and manipulation of currents at nanometre spatial scales remains a basic challenge and a crucial step towards scalable optoelectronic systems for microelectronics and information science. Here we introduce vectorial optoelectronic metasurfaces in which ultrafast light pulses induce local directional charge flows around symmetry-broken plasmonic nanostructures, with tunable responses and arbitrary patterning down to subdiffractive nanometre scales. Local symmetries and vectorial currents are revealed by polarization-dependent and wavelength-sensitive electrical readout and terahertz (THz) emission, whereas spatially tailored global currents are demonstrated in the direct generation of elusive broadband THz vector beams17. We show that, in graphene, a detailed interplay between electrodynamic, thermodynamic and hydrodynamic degrees of freedom gives rise to rapidly evolving nanoscale driving forces and charge flows under the extremely spatially and temporally localized excitation. These results set the stage for versatile patterning and optical control over nanoscale currents in materials diagnostics, THz spectroscopies, nanomagnetism and ultrafast information processing.
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Affiliation(s)
- Jacob Pettine
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, USA.
| | - Prashant Padmanabhan
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Teng Shi
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, USA
| | | | - Luke McClintock
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, USA
- Department of Physics, University of California, Davis, Davis, CA, USA
| | - Chun-Chieh Chang
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Kevin W C Kwock
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, USA
- Fu Foundation School of Engineering and Applied Science, Columbia University, New York, NY, USA
| | - Long Yuan
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Yue Huang
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - John Nogan
- Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, NM, USA
| | - Jon K Baldwin
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, USA
| | | | | | - Abul K Azad
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Filip Ronning
- Institute for Materials Science, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Antoinette J Taylor
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Rohit P Prasankumar
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, USA
- Intellectual Ventures, Bellevue, WA, USA
| | - Shi-Zeng Lin
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Hou-Tong Chen
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, USA.
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7
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Wang Y, Liu C, Duan H, Li Z, Wang C, Tan H, Feng S, Liu R, Li P, Yan W. Controlled synthesis of van der Waals CoS 2for improved p-type transistor contact. NANOTECHNOLOGY 2023; 35:025601. [PMID: 37797610 DOI: 10.1088/1361-6528/ad0059] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/10/2023] [Accepted: 10/05/2023] [Indexed: 10/07/2023]
Abstract
Two-dimensional (2D) van der Waals (vdW) p-type semiconductors have shown attractive application prospects as atomically thin channels in electronic devices. However, the high Schottky hole barrier of p-type semiconductor-metal contacts induced by Fermi-level pinning is hardly removed. Herein, we prepare a vdW 1T-CoS2nanosheet as the contact electrode of a WSe2field-effect transistor (FET), which shows a considerably high on/off ratio > 107and a hole mobility of ∼114.5 cm2V-1s-1. The CoS2nanosheets exhibit metallic conductivity with thickness dependence, which surpasses most 2D transition metal dichalcogenide metals or semimetals. The excellent FET performance of the CoS2-contacted WSe2FET device can be attributed to the high work function of CoS2, which lowers the Schottky hole barrier. Our work provides an effective method for growing vdW CoS2and opens up more possibilities for the application of 2D p-type semiconductors in electronic devices.
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Affiliation(s)
- Yao Wang
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, People's Republic of China
| | - Chaocheng Liu
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, People's Republic of China
| | - Hengli Duan
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, People's Republic of China
| | - Zhi Li
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, People's Republic of China
| | - Chao Wang
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, People's Republic of China
| | - Hao Tan
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, People's Republic of China
| | - Sihua Feng
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, People's Republic of China
| | - Ruiqi Liu
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, People's Republic of China
| | - Pai Li
- Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Wensheng Yan
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, People's Republic of China
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8
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Pettine J, Padmanabhan P, Sirica N, Prasankumar RP, Taylor AJ, Chen HT. Ultrafast terahertz emission from emerging symmetry-broken materials. LIGHT, SCIENCE & APPLICATIONS 2023; 12:133. [PMID: 37258515 PMCID: PMC10232484 DOI: 10.1038/s41377-023-01163-w] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/02/2023] [Revised: 03/28/2023] [Accepted: 04/16/2023] [Indexed: 06/02/2023]
Abstract
Nonlinear optical spectroscopies are powerful tools for investigating both static material properties and light-induced dynamics. Terahertz (THz) emission spectroscopy has emerged in the past several decades as a versatile method for directly tracking the ultrafast evolution of physical properties, quasiparticle distributions, and order parameters within bulk materials and nanoscale interfaces. Ultrafast optically-induced THz radiation is often analyzed mechanistically in terms of relative contributions from nonlinear polarization, magnetization, and various transient free charge currents. While this offers material-specific insights, more fundamental symmetry considerations enable the generalization of measured nonlinear tensors to much broader classes of systems. We thus frame the present discussion in terms of underlying broken symmetries, which enable THz emission by defining a system directionality in space and/or time, as well as more detailed point group symmetries that determine the nonlinear response tensors. Within this framework, we survey a selection of recent studies that utilize THz emission spectroscopy to uncover basic properties and complex behaviors of emerging materials, including strongly correlated, magnetic, multiferroic, and topological systems. We then turn to low-dimensional systems to explore the role of designer nanoscale structuring and corresponding symmetries that enable or enhance THz emission. This serves as a promising route for probing nanoscale physics and ultrafast light-matter interactions, as well as facilitating advances in integrated THz systems. Furthermore, the interplay between intrinsic and extrinsic material symmetries, in addition to hybrid structuring, may stimulate the discovery of exotic properties and phenomena beyond existing material paradigms.
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Affiliation(s)
- Jacob Pettine
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Prashant Padmanabhan
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Nicholas Sirica
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Rohit P Prasankumar
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
- Deep Science Fund, Intellectual Ventures, Bellevue, WA, 98005, USA
| | - Antoinette J Taylor
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Hou-Tong Chen
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA.
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9
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Lau CS, Das S, Verzhbitskiy IA, Huang D, Zhang Y, Talha-Dean T, Fu W, Venkatakrishnarao D, Johnson Goh KE. Dielectrics for Two-Dimensional Transition-Metal Dichalcogenide Applications. ACS NANO 2023. [PMID: 37257134 DOI: 10.1021/acsnano.3c03455] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
Despite over a decade of intense research efforts, the full potential of two-dimensional transition-metal dichalcogenides continues to be limited by major challenges. The lack of compatible and scalable dielectric materials and integration techniques restrict device performances and their commercial applications. Conventional dielectric integration techniques for bulk semiconductors are difficult to adapt for atomically thin two-dimensional materials. This review provides a brief introduction into various common and emerging dielectric synthesis and integration techniques and discusses their applicability for 2D transition metal dichalcogenides. Dielectric integration for various applications is reviewed in subsequent sections including nanoelectronics, optoelectronics, flexible electronics, valleytronics, biosensing, quantum information processing, and quantum sensing. For each application, we introduce basic device working principles, discuss the specific dielectric requirements, review current progress, present key challenges, and offer insights into future prospects and opportunities.
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Affiliation(s)
- Chit Siong Lau
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Sarthak Das
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Ivan A Verzhbitskiy
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Ding Huang
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Yiyu Zhang
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Teymour Talha-Dean
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
- Department of Physics and Astronomy, Queen Mary University of London, London E1 4NS, United Kingdom
| | - Wei Fu
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Dasari Venkatakrishnarao
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Kuan Eng Johnson Goh
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
- Department of Physics, National University of Singapore, 2 Science Drive 3, 117551, Singapore
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue 639798, Singapore
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10
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Jia K, Dong XJ, Li SS, Ji WX, Zhang CW. Electronic-correlation induced sign-reversible Berry phase and quantum anomalous valley Hall effects in Janus monolayer OsClBr. Phys Chem Chem Phys 2023. [PMID: 37254578 DOI: 10.1039/d3cp01504a] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/01/2023]
Abstract
Topological phase transition can be induced by electronic correlation effects combined with spin-orbit coupling (SOC). Here, based on the first-principles calculations +U approach, the influence of electronic correlation effects and SOC on topological and electronic properties of the Janus monolayer OsClBr is investigated. With intrinsic out-of-plane (OOP) magnetic anisotropy, the Janus monolayer OsClBr exhibits a sequence of states, namely, the ferrovalley (FV) to half-valley-metal (HVM) to quantum anomalous valley Hall effect (QAVHE) to HVM to FV states with increasing U values. The QAVHE is characterized by a chiral edge state linking the conduction and valence bands with a Chern number C = 1, which is closely associated with the band inversion between dx2-y2/dxy and dz2 orbitals, and sign-reversible Berry curvature. The section with larger U values (2.31-2.35 eV) is very essential for determining the new HVM and QAVHE states, and also proves that a strong electron correlation effect exists in the interior of the Janus monolayer OsClBr. When taking into consideration a representative U value (U = 2.5 eV), a valley polarization value of 157 meV can be observed, which can be switched by reversing the magnetization direction of Os atoms. It is noteworthy that the Curie temperature (TC) strongly depends on the electronic correlation effects. Our work provides a comprehensive discussion on the electronic and topological properties of the Janus monolayer OsClBr, and demonstrates that the electronic correlation effects combined with SOC can drive the emergence of QAVHE, which will open up new opportunities for valleytronic, spintronic, and topological nanoelectronic applications.
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Affiliation(s)
- Kang Jia
- School of Physics and Physical Engineering, Qufu Normal University, Qufu, Shandong, 273100, People's Republic of China
| | - Xiao-Jing Dong
- School of Physics and Physical Engineering, Qufu Normal University, Qufu, Shandong, 273100, People's Republic of China
| | - Sheng-Shi Li
- School of Physics and Technology, Institute of Spintronics, University of Jinan, Jinan, Shandong, 250022, People's Republic of China.
| | - Wei-Xiao Ji
- School of Physics and Technology, Institute of Spintronics, University of Jinan, Jinan, Shandong, 250022, People's Republic of China.
| | - Chang-Wen Zhang
- School of Physics and Physical Engineering, Qufu Normal University, Qufu, Shandong, 273100, People's Republic of China
- School of Physics and Technology, Institute of Spintronics, University of Jinan, Jinan, Shandong, 250022, People's Republic of China.
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11
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Pham PV, Mai TH, Do HB, Ponnusamy VK, Chuang FC. Integrated Graphene Heterostructures in Optical Sensing. MICROMACHINES 2023; 14:mi14051060. [PMID: 37241683 DOI: 10.3390/mi14051060] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/15/2023] [Revised: 05/14/2023] [Accepted: 05/14/2023] [Indexed: 05/28/2023]
Abstract
Graphene-an outstanding low-dimensional material-exhibited many physics behaviors that are unknown over the past two decades, e.g., exceptional matter-light interaction, large light absorption band, and high charge carrier mobility, which can be adjusted on arbitrary surfaces. The deposition approaches of graphene on silicon to form the heterostructure Schottky junctions was studied, unveiling new roadmaps to detect the light at wider-ranged absorption spectrums, e.g., far-infrared via excited photoemission. In addition, heterojunction-assisted optical sensing systems enable the active carriers' lifetime and, thereby, accelerate the separation speed and transport, and then they pave new strategies to tune high-performance optoelectronics. In this mini-review, an overview is considered concerning recent advancements in graphene heterostructure devices and their optical sensing ability in multiple applications (ultrafast optical sensing system, plasmonic system, optical waveguide system, optical spectrometer, or optical synaptic system) is discussed, in which the prominent studies for the improvement of performance and stability, based on the integrated graphene heterostructures, have been reported and are also addressed again. Moreover, the pros and cons of graphene heterostructures are revealed along with the syntheses and nanofabrication sequences in optoelectronics. Thereby, this gives a variety of promising solutions beyond the ones presently used. Eventually, the development roadmap of futuristic modern optoelectronic systems is predicted.
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Affiliation(s)
- Phuong V Pham
- Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
| | - The-Hung Mai
- Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
| | - Huy-Binh Do
- Faculty of Applied Science, Ho Chi Minh City University of Technology and Education, Ho Chi Minh City 700000, Vietnam
| | - Vinoth Kumar Ponnusamy
- Department of Medicinal and Applied Chemistry and Research Center for Precision Environmental Medicine, Kaohsiung Medical University (KMU), Kaohsiung 807, Taiwan
- Department of Medical Research, Kaohsiung Medical University Hospital (KMUH), Kaohsiung 807, Taiwan
- Department of Chemistry, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
| | - Feng-Chuan Chuang
- Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
- Physics Division, National Center for Theoretical Sciences, Taipei 10617, Taiwan
- Center for Theoretical and Computational Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
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12
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Rong R, Liu Y, Nie X, Zhang W, Zhang Z, Liu Y, Guo W. The Interaction of 2D Materials With Circularly Polarized Light. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2206191. [PMID: 36698292 PMCID: PMC10074140 DOI: 10.1002/advs.202206191] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/24/2022] [Revised: 12/16/2022] [Indexed: 06/17/2023]
Abstract
2D materials (2DMs), due to spin-valley locking degree of freedom, exhibit strongly bound exciton and chiral optical selection rules and become promising material candidates for optoelectronic and spin/valleytronic devices. Over the last decade, the manifesting of 2D materials by circularly polarized lights expedites tremendous fascinating phenomena, such as valley/exciton Hall effect, Moiré exciton, optical Stark effect, circular dichroism, circularly polarized photoluminescence, and spintronic property. In this review, recent advance in the interaction of circularly polarized light with 2D materials covering from graphene, black phosphorous, transition metal dichalcogenides, van der Waals heterostructures as well as small proportion of quasi-2D perovskites and topological materials, is overviewed. The confronted challenges and theoretical and experimental opportunities are also discussed, attempting to accelerate the prosperity of chiral light-2DMs interactions.
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Affiliation(s)
- Rong Rong
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
| | - Ying Liu
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
| | - Xuchen Nie
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
| | - Wei Zhang
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
| | - Zhuhua Zhang
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
| | - Yanpeng Liu
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
| | - Wanlin Guo
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
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13
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Niebur A, Söll A, Haizmann P, Strolka O, Rudolph D, Tran K, Renz F, Frauendorf AP, Hübner J, Peisert H, Scheele M, Lauth J. Untangling the intertwined: metallic to semiconducting phase transition of colloidal MoS 2 nanoplatelets and nanosheets. NANOSCALE 2023; 15:5679-5688. [PMID: 36861175 DOI: 10.1039/d3nr00096f] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
2D semiconducting transition metal dichalcogenides (TMDCs) are highly promising materials for future spin- and valleytronic applications and exhibit an ultrafast response to external (optical) stimuli which is essential for optoelectronics. Colloidal nanochemistry on the other hand is an emerging alternative for the synthesis of 2D TMDC nanosheet (NS) ensembles, allowing for the control of the reaction via tunable precursor and ligand chemistry. Up to now, wet-chemical colloidal syntheses yielded intertwined/agglomerated NSs with a large lateral size. Here, we show a synthesis method for 2D mono- and bilayer MoS2 nanoplatelets with a particularly small lateral size (NPLs, 7.4 nm ± 2.2 nm) and MoS2 NSs (22 nm ± 9 nm) as a reference by adjusting the molybdenum precursor concentration in the reaction. We find that in colloidal 2D MoS2 syntheses initially a mixture of the stable semiconducting and the metastable metallic crystal phase is formed. 2D MoS2 NPLs and NSs then both undergo a full transformation to the semiconducting crystal phase by the end of the reaction, which we quantify by X-ray photoelectron spectroscopy. Phase pure semiconducting MoS2 NPLs with a lateral size approaching the MoS2 exciton Bohr radius exhibit strong additional lateral confinement, leading to a drastically shortened decay of the A and B exciton which is characterized by ultrafast transient absorption spectroscopy. Our findings represent an important step for utilizing colloidal TMDCs, for example small MoS2 NPLs represent an excellent starting point for the growth of heterostructures for future colloidal photonics.
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Affiliation(s)
- André Niebur
- Institute of Physical Chemistry and Electrochemistry, Leibniz University Hannover, Callinstr. 3a, D-30167 Hannover, Germany.
- Cluster of Excellence PhoenixD (Photonics, Optics, and Engineering - Innovation Across Disciplines), Hannover, Germany
| | - Aljoscha Söll
- Institute of Physical Chemistry and Electrochemistry, Leibniz University Hannover, Callinstr. 3a, D-30167 Hannover, Germany.
| | - Philipp Haizmann
- Institute of Physical and Theoretical Chemistry, University of Tübingen, Auf der Morgenstelle 18, D-72076 Tübingen, Germany
| | - Onno Strolka
- Institute of Physical Chemistry and Electrochemistry, Leibniz University Hannover, Callinstr. 3a, D-30167 Hannover, Germany.
- Cluster of Excellence PhoenixD (Photonics, Optics, and Engineering - Innovation Across Disciplines), Hannover, Germany
- Institute of Physical and Theoretical Chemistry, University of Tübingen, Auf der Morgenstelle 18, D-72076 Tübingen, Germany
| | - Dominik Rudolph
- Institute of Physical Chemistry and Electrochemistry, Leibniz University Hannover, Callinstr. 3a, D-30167 Hannover, Germany.
- Cluster of Excellence PhoenixD (Photonics, Optics, and Engineering - Innovation Across Disciplines), Hannover, Germany
| | - Kevin Tran
- Institute of Inorganic Chemistry, Leibniz University Hannover, Callinstr. 9, D-30167 Hannover, Germany
- Laboratory of Nano and Quantum Engineering (LNQE), Leibniz University Hannover, Schneiderberg 39, D-30167 Hannover, Germany
| | - Franz Renz
- Institute of Inorganic Chemistry, Leibniz University Hannover, Callinstr. 9, D-30167 Hannover, Germany
- Laboratory of Nano and Quantum Engineering (LNQE), Leibniz University Hannover, Schneiderberg 39, D-30167 Hannover, Germany
| | - André Philipp Frauendorf
- Institute of Solid State Physics, Leibniz University Hannover, Appelstr. 2, D-30167 Hannover, Germany
| | - Jens Hübner
- Laboratory of Nano and Quantum Engineering (LNQE), Leibniz University Hannover, Schneiderberg 39, D-30167 Hannover, Germany
- Institute of Solid State Physics, Leibniz University Hannover, Appelstr. 2, D-30167 Hannover, Germany
| | - Heiko Peisert
- Institute of Physical and Theoretical Chemistry, University of Tübingen, Auf der Morgenstelle 18, D-72076 Tübingen, Germany
| | - Marcus Scheele
- Institute of Physical and Theoretical Chemistry, University of Tübingen, Auf der Morgenstelle 18, D-72076 Tübingen, Germany
| | - Jannika Lauth
- Institute of Physical Chemistry and Electrochemistry, Leibniz University Hannover, Callinstr. 3a, D-30167 Hannover, Germany.
- Cluster of Excellence PhoenixD (Photonics, Optics, and Engineering - Innovation Across Disciplines), Hannover, Germany
- Institute of Physical and Theoretical Chemistry, University of Tübingen, Auf der Morgenstelle 18, D-72076 Tübingen, Germany
- Laboratory of Nano and Quantum Engineering (LNQE), Leibniz University Hannover, Schneiderberg 39, D-30167 Hannover, Germany
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14
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Pincelli T, Vasileiadis T, Dong S, Beaulieu S, Dendzik M, Zahn D, Lee SE, Seiler H, Qi Y, Xian RP, Maklar J, Coy E, Mueller NS, Okamura Y, Reich S, Wolf M, Rettig L, Ernstorfer R. Observation of Multi-Directional Energy Transfer in a Hybrid Plasmonic-Excitonic Nanostructure. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2209100. [PMID: 36482148 DOI: 10.1002/adma.202209100] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/03/2022] [Revised: 11/29/2022] [Indexed: 06/17/2023]
Abstract
Hybrid plasmonic devices involve a nanostructured metal supporting localized surface plasmons to amplify light-matter interaction, and a non-plasmonic material to functionalize charge excitations. Application-relevant epitaxial heterostructures, however, give rise to ballistic ultrafast dynamics that challenge the conventional semiclassical understanding of unidirectional nanometal-to-substrate energy transfer. Epitaxial Au nanoislands are studied on WSe2 with time- and angle-resolved photoemission spectroscopy and femtosecond electron diffraction: this combination of techniques resolves material, energy, and momentum of charge-carriers and phonons excited in the heterostructure. A strong non-linear plasmon-exciton interaction that transfers the energy of sub-bandgap photons very efficiently to the semiconductor is observed, leaving the metal cold until non-radiative exciton recombination heats the nanoparticles on hundreds of femtoseconds timescales. The results resolve a multi-directional energy exchange on timescales shorter than the electronic thermalization of the nanometal. Electron-phonon coupling and diffusive charge-transfer determine the subsequent energy flow. This complex dynamics opens perspectives for optoelectronic and photocatalytic applications, while providing a constraining experimental testbed for state-of-the-art modelling.
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Affiliation(s)
- Tommaso Pincelli
- Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 14195, Berlin, Germany
- Institut für Optik und Atomare Physik, Technische Universität Berlin, Straße des 17. Juni 135, 10623, Berlin, Germany
| | - Thomas Vasileiadis
- Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 14195, Berlin, Germany
- Faculty of Physics, Adam Mickiewicz University, Uniwersytetu Poznanskiego 2, Poznan, 61-614, Poland
| | - Shuo Dong
- Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 14195, Berlin, Germany
| | - Samuel Beaulieu
- Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 14195, Berlin, Germany
- Université de Bordeaux - CNRS - CEA, CELIA, UMR5107, Talence, F33405, France
| | - Maciej Dendzik
- Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 14195, Berlin, Germany
- Department of Applied Physics, KTH Royal Institute of Technology, Hannes Alfvéns väg 12, Stockholm, 114 19, Sweden
| | - Daniela Zahn
- Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 14195, Berlin, Germany
| | - Sang-Eun Lee
- Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 14195, Berlin, Germany
| | - Hélène Seiler
- Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 14195, Berlin, Germany
- Freie Universität Berlin, Arnimallee 14, 14195, Berlin, Germany
| | - Yingpeng Qi
- Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 14195, Berlin, Germany
- Center for Ultrafast Science and Technology, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - R Patrick Xian
- Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 14195, Berlin, Germany
- Department of Statistical Sciences, University of Toronto, 700 University Avenue, Toronto, M5G 1Z5, Canada
| | - Julian Maklar
- Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 14195, Berlin, Germany
| | - Emerson Coy
- NanoBioMedical Centre, Adam Mickiewicz University, ul. Wszechnicy Piastowskiej 3, Poznań, PL 61614, Poland
| | - Niclas S Mueller
- Freie Universität Berlin, Arnimallee 14, 14195, Berlin, Germany
- NanoPhotonics Centre, Cavendish Laboratory, Department of Physics, University of Cambridge, JJ Thomson Avenue, Cambridge, CB30HE, UK
| | - Yu Okamura
- Freie Universität Berlin, Arnimallee 14, 14195, Berlin, Germany
| | - Stephanie Reich
- Freie Universität Berlin, Arnimallee 14, 14195, Berlin, Germany
| | - Martin Wolf
- Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 14195, Berlin, Germany
| | - Laurenz Rettig
- Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 14195, Berlin, Germany
| | - Ralph Ernstorfer
- Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 14195, Berlin, Germany
- Institut für Optik und Atomare Physik, Technische Universität Berlin, Straße des 17. Juni 135, 10623, Berlin, Germany
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15
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Lai S, Zhang Z, Wang N, Rasmita A, Deng Y, Liu Z, Gao WB. Dual-Gate All-Electrical Valleytronic Transistors. NANO LETTERS 2023; 23:192-197. [PMID: 36594477 DOI: 10.1021/acs.nanolett.2c03947] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
The development of integrated circuits (ICs) based on a complementary metal-oxide-semiconductor through transistor scaling has reached the technology bottleneck; thus, alternative approaches from new physical mechanisms are highly demanded. Valleytronics in two-dimensional (2D) material systems has recently emerged as a strong candidate, which utilizes the valley degree of freedom to process information for electronic applications. However, for all-electrical valleytronic transistors, very low room-temperature "valley on-off" ratios (around 10) have been reported so far, which seriously limits their practical applications. In this work, we successfully illustrated both n- and p-type valleytronic transistor performances in monolayer MoS2 and WSe2 devices, with measured "valley on-off" ratios improved up to 3 orders of magnitude greater compared to previous reports. Our work shows a promising way for the electrically controllable manipulation of valley degree of freedom toward practical device applications.
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Affiliation(s)
- Shen Lai
- Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macau SAR 999078, People's Republic of China
| | - Zhaowei Zhang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
| | - Naizhou Wang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
| | - Abdullah Rasmita
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
| | - Ya Deng
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Wei-Bo Gao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
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16
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Li X, Yang C, Xia Y, Zeng X, Shen P, Li L, Xu F, Cai D, Wu Y, Wu Z, Li S, Kang J. Nonvolatile Electrical Valley Manipulation in WS 2 by Ferroelectric Gating. ACS NANO 2022; 16:20598-20606. [PMID: 36414329 DOI: 10.1021/acsnano.2c07469] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Valleytronics in transition metal dichalcogenides has been intensively investigated for potential applications in next-generation information storage, data processing, and signal transmission devices. Here a ferroelectric gating approach is engaged in achieving nonvolatile electrical tuning of the valley-excitonic properties of monolayer and bilayer WS2. The gating effects include carrier doping and ferroelectric coupling, which are further distinguished by comparing two geometries where the gate electrodes are in direct contact with or insulated from the WS2 crystal. The results show that the carrier doping from gate electrodes acts on WS2 through carrier screening, which only moderately alters the valley polarization. In contrast, the ferroelectric gating promotes electron-phonon interaction, introduces a strong surface polarization field, and controls the interfacial charge trapping/detrapping, causing a Stark shift in exciton energy and strongly enhancing room-temperature valley polarization. In bilayer WS2, the intralayer-interlayer exciton transition is further induced, contributing to even higher valley polarization. The ferroelectric coupling effect can still be maintained after the removal of gate voltage, showing its nonvolatile nature. The role of ferroelectricity is further verified by the anomalous temperature dependence in valley polarization. This work has revealed effective electrical control over valley excitons in semiconductors through interaction with ferroelectric materials. The reported high room-temperature valley polarization in WS2 will boost the development of valleytronics devices.
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Affiliation(s)
- Xu Li
- Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices, Ministry of Education, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Jiujiang Research Institute, Xiamen University, Xiamen361005, P.R. China
| | - Chengbiao Yang
- Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices, Ministry of Education, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Jiujiang Research Institute, Xiamen University, Xiamen361005, P.R. China
| | - Yuanzheng Xia
- Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices, Ministry of Education, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Jiujiang Research Institute, Xiamen University, Xiamen361005, P.R. China
| | - Xinlong Zeng
- Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices, Ministry of Education, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Jiujiang Research Institute, Xiamen University, Xiamen361005, P.R. China
| | - Peng Shen
- Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices, Ministry of Education, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Jiujiang Research Institute, Xiamen University, Xiamen361005, P.R. China
| | - Linglong Li
- School of Physics, Southeast University, Nanjing211189, P.R. China
| | - Feiya Xu
- Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices, Ministry of Education, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Jiujiang Research Institute, Xiamen University, Xiamen361005, P.R. China
| | - Duanjun Cai
- Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices, Ministry of Education, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Jiujiang Research Institute, Xiamen University, Xiamen361005, P.R. China
| | - Yaping Wu
- Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices, Ministry of Education, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Jiujiang Research Institute, Xiamen University, Xiamen361005, P.R. China
| | - Zhiming Wu
- Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices, Ministry of Education, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Jiujiang Research Institute, Xiamen University, Xiamen361005, P.R. China
| | - Shuping Li
- Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices, Ministry of Education, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Jiujiang Research Institute, Xiamen University, Xiamen361005, P.R. China
| | - Junyong Kang
- Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices, Ministry of Education, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Jiujiang Research Institute, Xiamen University, Xiamen361005, P.R. China
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17
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Chen J, Zhou Y, Yan J, Liu J, Xu L, Wang J, Wan T, He Y, Zhang W, Chai Y. Room-temperature valley transistors for low-power neuromorphic computing. Nat Commun 2022; 13:7758. [PMID: 36522374 PMCID: PMC9755139 DOI: 10.1038/s41467-022-35396-x] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/18/2022] [Accepted: 11/29/2022] [Indexed: 12/23/2022] Open
Abstract
Valley pseudospin is an electronic degree of freedom that promises highly efficient information processing applications. However, valley-polarized excitons usually have short pico-second lifetimes, which limits the room-temperature applicability of valleytronic devices. Here, we demonstrate room-temperature valley transistors that operate by generating free carrier valley polarization with a long lifetime. This is achieved by electrostatic manipulation of the non-trivial band topology of the Weyl semiconductor tellurium (Te). We observe valley-polarized diffusion lengths of more than 7 μm and fabricate valley transistors with an ON/OFF ratio of 105 at room temperature. Moreover, we demonstrate an ion insertion/extraction device structure that enables 32 non-volatile memory states with high linearity and symmetry in the Te valley transistor. With ultralow power consumption (~fW valley contribution), we enable the inferring process of artificial neural networks, exhibiting potential for applications in low-power neuromorphic computing.
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Affiliation(s)
- Jiewei Chen
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China
| | - Yue Zhou
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, 430074, Wuhan, China
| | - Jianmin Yan
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China
| | - Jidong Liu
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Shenzhen University, 518060, Shenzhen, China
| | - Lin Xu
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China
| | - Jingli Wang
- Frontier Institute of Chip and System, Fudan University, Shanghai, China
| | - Tianqing Wan
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China
| | - Yuhui He
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, 430074, Wuhan, China
| | - Wenjing Zhang
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Shenzhen University, 518060, Shenzhen, China
| | - Yang Chai
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China.
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China.
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18
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Zhuo X, Mychinko M, Heyvaert W, Larios D, Obelleiro-Liz M, Taboada JM, Bals S, Liz-Marzán LM. Morphological and Optical Transitions during Micelle-Seeded Chiral Growth on Gold Nanorods. ACS NANO 2022; 16:19281-19292. [PMID: 36288463 DOI: 10.1021/acsnano.2c08668] [Citation(s) in RCA: 12] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Chiral plasmonics is a rapidly developing field where breakthroughs and unsolved problems coexist. We have recently reported binary surfactant-assisted seeded growth of chiral gold nanorods (Au NRs) with high chiroptical activity. Such a seeded-growth process involves the use of a chiral cosurfactant that induces micellar helicity, in turn driving the transition from achiral to chiral Au NRs, from both the morphological and the optical points of view. We report herein a detailed study on both transitions, which reveals intermediate states that were hidden so far. The correlation between structure and optical response is carefully analyzed, including the (linear and CD) spectral evolution over time, electron tomography, the impact of NR dimensions on their optical response, the variation of the absorption-to-scattering ratio during the evolution from achiral to chiral Au NRs, and the near-field enhancement related to chiral plasmon modes. Our findings provide further understanding of the growth process of chiral Au NRs and the associated optical changes, which will facilitate further study and applications of chiral nanomaterials.
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Affiliation(s)
- Xiaolu Zhuo
- CIC biomaGUNE, Basque Research and Technology Alliance (BRTA), Paseo de Miramón 182, 20014 Donostia-San, Sebastián, Spain
- Centro de Investigación Biomédica en Red de Bioingeniería, Biomateriales y Nanomedicina (CIBER-BBN), Paseo de Miramón 182, 20014 Donostia-San, Sebastián, Spain
| | - Mikhail Mychinko
- Electron Microscopy for Materials Research (EMAT) and NANOlab Centre of Excellence, University of Antwerp, 2020 Antwerp, Belgium
| | - Wouter Heyvaert
- Electron Microscopy for Materials Research (EMAT) and NANOlab Centre of Excellence, University of Antwerp, 2020 Antwerp, Belgium
| | - David Larios
- Departamento de Tecnología de los Computadores y de las Comunicaciones, University of Extremadura, 10003 Cáceres, Spain
| | - Manuel Obelleiro-Liz
- EM3 Works, Spin-off of the University of Vigo and the University of Extremadura, PTL Valladares, 36315 Vigo, Spain
| | - José M Taboada
- Departamento de Tecnología de los Computadores y de las Comunicaciones, University of Extremadura, 10003 Cáceres, Spain
| | - Sara Bals
- Electron Microscopy for Materials Research (EMAT) and NANOlab Centre of Excellence, University of Antwerp, 2020 Antwerp, Belgium
| | - Luis M Liz-Marzán
- CIC biomaGUNE, Basque Research and Technology Alliance (BRTA), Paseo de Miramón 182, 20014 Donostia-San, Sebastián, Spain
- Centro de Investigación Biomédica en Red de Bioingeniería, Biomateriales y Nanomedicina (CIBER-BBN), Paseo de Miramón 182, 20014 Donostia-San, Sebastián, Spain
- Ikerbasque, Basque Foundation for Science, 48013 Bilbao, Spain
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19
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Ren X, Wang Y, Ji W, Ren M, Wang P, Zhang S, Li S, Zhang C. Possibility of regulating valley-contrasting physics and topological properties by ferroelectricity in functionalized arsenene. Phys Chem Chem Phys 2022; 24:23910-23918. [PMID: 36165573 DOI: 10.1039/d2cp03196e] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
A two-dimensional (2D) multifunctional material, which couples multiple physical properties together, is both fundamentally intriguing and practically appealing. Here, based on first-principles calculations and tight-binding (TB) model analysis, the possibility of regulating the valley-contrasting physics and nontrivial topological properties via ferroelectricity is investigated in monolayer AsCH2OH. Reversible electric polarization is accessible via the rotation operation on the ligand. The broken inversion symmetry and the spin-orbit coupling (SOC) would lead to valley spin splitting, spin-valley coupling and valley-contrasting Berry curvature. More importantly, the reversal of electric polarization can realize the nonvolatile control of valley-dependent properties. Besides, the nontrivial topological state is confirmed in the monolayer AsCH2OH, which is robust against the rotation operation on the ligand. The magnitude of polarization, valley spin splitting and bulk band gap can be effectively modulated by the biaxial strain. The H-terminated SiC is demonstrated to be an appropriate candidate for encapsulating monolayer AsCH2OH, without affecting its exotic properties. These findings provide insights into the fundamental physics for the coupling of the valley-contrasting phenomenon, topological properties and ferroelectricity, and open avenues for exploiting innovative device applications.
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Affiliation(s)
- Xiaohan Ren
- Spintronics Institute, School of Physics and Technology, University of Jinan, Jinan, 250022, China.
| | - Yaping Wang
- State Key Lab of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan 250100, China
| | - Weixiao Ji
- Spintronics Institute, School of Physics and Technology, University of Jinan, Jinan, 250022, China.
| | - Miaojuan Ren
- Spintronics Institute, School of Physics and Technology, University of Jinan, Jinan, 250022, China.
| | - Peiji Wang
- Spintronics Institute, School of Physics and Technology, University of Jinan, Jinan, 250022, China.
| | - Shufeng Zhang
- Spintronics Institute, School of Physics and Technology, University of Jinan, Jinan, 250022, China.
| | - Shengshi Li
- Spintronics Institute, School of Physics and Technology, University of Jinan, Jinan, 250022, China.
| | - Changwen Zhang
- Spintronics Institute, School of Physics and Technology, University of Jinan, Jinan, 250022, China.
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20
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Jariwala D. Functionalizing Van der Waals materials by shaping them. LIGHT, SCIENCE & APPLICATIONS 2022; 11:206. [PMID: 35790723 PMCID: PMC9256612 DOI: 10.1038/s41377-022-00900-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
A number of van der Waals materials can be gradually tuned from electron to hole conductance with an increasing or decreasing thickness, which offers a novel route to modulate nanoscale charge-carrier distribution and thus functionality in devices.
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Affiliation(s)
- Deep Jariwala
- School of Engineering and Applied Sciences, University of Pennsylvania, Philadelphia, PA, 19104, USA.
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21
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Chen J, Zhang T, Wang J, Xu L, Lin Z, Liu J, Wang C, Zhang N, Lau SP, Zhang W, Chhowalla M, Chai Y. Topological phase change transistors based on tellurium Weyl semiconductor. SCIENCE ADVANCES 2022; 8:eabn3837. [PMID: 35687677 PMCID: PMC9187226 DOI: 10.1126/sciadv.abn3837] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/22/2021] [Accepted: 04/26/2022] [Indexed: 06/15/2023]
Abstract
Modern electronics demand transistors with extremely high performance and energy efficiency. Charge-based transistors with conventional semiconductors experience substantial heat dissipation because of carrier scattering. Here, we demonstrate low-loss topological phase change transistors (TPCTs) based on tellurium, a Weyl semiconductor. By modulating the energy separation between the Fermi level and the Weyl point of tellurium through electrostatic gate modulation, the device exhibits topological phase change between Weyl (Chern number ≠ 0) and conventional (Chern number = 0) semiconductors. In the Weyl ON state, the device has low-loss transport characteristics due to the global topology of gauge fields against external perturbations; the OFF state exhibits trivial charge transport in the conventional phase by moving the Fermi level into the bandgap. The TPCTs show a high ON/OFF ratio (108) at low operation voltage (≤2 volts) and high ON-state conductance (39 mS/μm). Our studies provide alternative strategies for realizing ultralow power electronics.
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Affiliation(s)
- Jiewei Chen
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China
| | - Ting Zhang
- Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China
| | - Jingli Wang
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
- Frontier Institute of Chip and System, Fudan University, Shanghai, China
| | - Lin Xu
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
| | - Ziyuan Lin
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
| | - Jidong Liu
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Shenzhen University, Shenzhen 518060, China
| | - Cong Wang
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China
| | - Ning Zhang
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China
| | - Shu Ping Lau
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China
| | - Wenjing Zhang
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Shenzhen University, Shenzhen 518060, China
| | - Manish Chhowalla
- Materials Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS, UK
| | - Yang Chai
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China
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22
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Liu Y, Elbanna A, Gao W, Pan J, Shen Z, Teng J. Interlayer Excitons in Transition Metal Dichalcogenide Semiconductors for 2D Optoelectronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2107138. [PMID: 34700359 DOI: 10.1002/adma.202107138] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/08/2021] [Revised: 10/13/2021] [Indexed: 06/13/2023]
Abstract
Optoelectronic materials that allow on-chip integrated light signal emitting, routing, modulation, and detection are crucial for the development of high-speed and high-throughput optical communication and computing technologies. Interlayer excitons in 2D van der Waals heterostructures, where electrons and holes are bounded by Coulomb interaction but spatially localized in different 2D layers, have recently attracted intense attention for their enticing properties and huge potential in device applications. Here, a general view of these 2D-confined hydrogen-like bosonic particles and the state-of-the-art developments with respect to the frontier concepts and prototypes is presented. Staggered type-II band alignment enables expansion of the interlayer direct bandgap from the intrinsic visible in monolayers up to the near- or even mid-infrared spectrum. Owing to large exciton binding energy, together with ultralong lifetime, room-temperature exciton devices and observation of quantum behaviors are demonstrated. With the rapid advances, it can be anticipated that future studies of interlayer excitons will not only allow the construction of all-exciton information processing circuits but will also continue to enrich the panoply of ideas on quantum phenomena.
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Affiliation(s)
- Yuanda Liu
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore, 138634, Singapore
| | - Ahmed Elbanna
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore, 138634, Singapore
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 637371, Singapore
| | - Weibo Gao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 637371, Singapore
- The Photonics Institute and Center for Disruptive Photonic Technologies, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Jisheng Pan
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore, 138634, Singapore
| | - Zexiang Shen
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 637371, Singapore
- The Photonics Institute and Center for Disruptive Photonic Technologies, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Jinghua Teng
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore, 138634, Singapore
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23
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Huang L, Zhu X, Hu G, Deng C, Sun Y, Wang D, Lu M, Yun B, Zhang R, Zhang Y, Cui Y. Electrical Switching of the Off-Resonance Room-Temperature Valley Polarization in Monolayer MoS 2 by a Double-Resonance Chiral Microstructure. ACS APPLIED MATERIALS & INTERFACES 2022; 14:22381-22388. [PMID: 35511437 DOI: 10.1021/acsami.2c03688] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Enhancing and expanding the manipulated range of room-temperature valley polarization at off-resonance wavelength is extremely crucial to developing various functional valleytronic devices. Although these have been realized through the double-resonance strategy or twist-angle engineering, the demand for electrical control over the concepts remains elusive. Here, we fabricate a gate-tunable double-resonance chiral microstructure using a molybdenum disulfides (MoS2) monolayer. On the basis of the varied interface charge density, we demonstrate the huge photoluminescence (PL) tuning ability of this configuration. Furthermore, benefiting predominately from the screening of long-range e-h exchange interactions and the chiral Purcell effect, the electrical switching of the room-temperature valley polarization at off-resonance wavelength is also realized. Our work enriches the functions of TMDs-based optoelectronic devices and may create important applications in future valley-polarized encode and information processing devices.
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Affiliation(s)
- Lei Huang
- Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing, Jiangsu 210096, China
| | - Xiaofan Zhu
- Jiangsu Key Laboratory for Design and Manufacture of Micro-Nano Biomedical Instruments, School of Mechanical Engineering, Southeast University, Nanjing 211189, China
| | - Guohua Hu
- Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing, Jiangsu 210096, China
| | - Chunyu Deng
- Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing, Jiangsu 210096, China
| | - Yu Sun
- Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing, Jiangsu 210096, China
| | - Dongyu Wang
- Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing, Jiangsu 210096, China
| | - Mengjia Lu
- Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing, Jiangsu 210096, China
| | - Binfeng Yun
- Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing, Jiangsu 210096, China
| | - Ruohu Zhang
- Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing, Jiangsu 210096, China
| | - Yan Zhang
- Jiangsu Key Laboratory for Design and Manufacture of Micro-Nano Biomedical Instruments, School of Mechanical Engineering, Southeast University, Nanjing 211189, China
| | - Yiping Cui
- Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing, Jiangsu 210096, China
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24
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You Q, Li Z, Li Y, Qiu L, Bi X, Zhang L, Zhang D, Fang Y, Wang P. Resonance Photoluminescence Enhancement of Monolayer MoS 2 via a Plasmonic Nanowire Dimer Optical Antenna. ACS APPLIED MATERIALS & INTERFACES 2022; 14:23756-23764. [PMID: 35575696 DOI: 10.1021/acsami.2c02684] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Two-dimensional transition-metal dichalcogenides (TMDs) such as monolayer MoS2 exhibit remarkable optical properties. However, the intrinsic absorption and emission rates of MoS2 are very low, thus severely hindering its application in electronics and photonics. Combining MoS2 with a plasmonic optical antenna is an alternative solution to enhance the emission rates of the 2D semiconductor, and this can drastically increase the photoresponsivity of the corresponding photodetector. Herein, we have constructed a plasmonic gap cavity of a nanowire dimer (NWD) system as an optical antenna to brighten the emission of MoS2 off the hot spot. Different from the conventional enhancement concept which occurred in the plasmonic hot spot, the light emission off the nanogap hot spot was thoroughly investigated. We demonstrate that this new plasmonic optical nanostructure leads to a strong enhancement due to the Purcell effect. The NWD optical antenna can trap light to the near field through a high-efficiency plasmonic gap mode (PGM); then the PL emission was enhanced drastically up to 14.5-fold due to the resonance of the plasmonic gap mode (PGM) in the NWD with the excitonic band of monolayer MoS2. Theoretical simulations reveal that this NWD can alter the efficiency of convergence and excitation, which was consistent with our experimental results. This study can provide a pathway toward enhancing and controlling PGM-enhanced light emission of TMD materials beyond the plasmonic hot spot.
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Affiliation(s)
- Qingzhang You
- The Beijing Key Laboratory for Nano-Photonics and Nano-Structure, Department of Physics, Capital Normal University, Beijing 100048, People's Republic of China
| | - Ze Li
- The Beijing Key Laboratory for Nano-Photonics and Nano-Structure, Department of Physics, Capital Normal University, Beijing 100048, People's Republic of China
| | - Yang Li
- The Beijing Key Laboratory for Nano-Photonics and Nano-Structure, Department of Physics, Capital Normal University, Beijing 100048, People's Republic of China
| | - Lilong Qiu
- The Beijing Key Laboratory for Nano-Photonics and Nano-Structure, Department of Physics, Capital Normal University, Beijing 100048, People's Republic of China
| | - Xinxin Bi
- The Beijing Key Laboratory for Nano-Photonics and Nano-Structure, Department of Physics, Capital Normal University, Beijing 100048, People's Republic of China
| | - Lisheng Zhang
- The Beijing Key Laboratory for Nano-Photonics and Nano-Structure, Department of Physics, Capital Normal University, Beijing 100048, People's Republic of China
| | - Duan Zhang
- The Beijing Key Laboratory for Nano-Photonics and Nano-Structure, Department of Physics, Capital Normal University, Beijing 100048, People's Republic of China
- Elementary Educational College, Capital Normal University, Beijing 100048, People's Republic of China
| | - Yan Fang
- The Beijing Key Laboratory for Nano-Photonics and Nano-Structure, Department of Physics, Capital Normal University, Beijing 100048, People's Republic of China
| | - Peijie Wang
- The Beijing Key Laboratory for Nano-Photonics and Nano-Structure, Department of Physics, Capital Normal University, Beijing 100048, People's Republic of China
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25
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Luo M, Sun H, Qi Z, Lu K, Chen M, Kang D, Kim Y, Burt D, Yu X, Wang C, Kim YD, Wang H, Wang QJ, Nam D. Triaxially strained suspended graphene for large-area pseudo-magnetic fields. OPTICS LETTERS 2022; 47:2174-2177. [PMID: 35486753 DOI: 10.1364/ol.455569] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/08/2022] [Accepted: 03/26/2022] [Indexed: 05/22/2023]
Abstract
Strain-engineered graphene has garnered much attention recently owing to the possibilities of creating substantial energy gaps enabled by pseudo-magnetic fields (PMFs). While theoretical works proposed the possibility of creating large-area PMFs by straining monolayer graphene along three crystallographic directions, clear experimental demonstration of such promising devices remains elusive. Herein, we experimentally demonstrate a triaxially strained suspended graphene structure that has the potential to possess large-scale and quasi-uniform PMFs. Our structure employs uniquely designed metal electrodes that function both as stressors and metal contacts for current injection. Raman characterization and tight-binding simulations suggest the possibility of achieving PMFs over a micrometer-scale area. Current-voltage measurements confirm an efficient current injection into graphene, showing the potential of our devices for a new class of optoelectronic applications. We also theoretically propose a photonic crystal-based laser structure that obtains strongly localized optical fields overlapping with the spatial area under uniform PMFs, thus presenting a practical route toward the realization of graphene lasers.
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26
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Pal A, Zhang S, Chavan T, Agashiwala K, Yeh CH, Cao W, Banerjee K. Quantum-Engineered Devices Based on 2D Materials for Next-Generation Information Processing and Storage. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022:e2109894. [PMID: 35468661 DOI: 10.1002/adma.202109894] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/05/2021] [Revised: 04/11/2022] [Indexed: 06/14/2023]
Abstract
As an approximation to the quantum state of solids, the band theory, developed nearly seven decades ago, fostered the advance of modern integrated solid-state electronics, one of the most successful technologies in the history of human civilization. Nonetheless, their rapidly growing energy consumption and accompanied environmental issues call for more energy-efficient electronics and optoelectronics, which necessitate the exploration of more advanced quantum mechanical effects, such as band-to-band tunneling, spin-orbit coupling, spin-valley locking, and quantum entanglement. The emerging 2D layered materials, featured by their exotic electrical, magnetic, optical, and structural properties, provide a revolutionary low-dimensional and manufacture-friendly platform (and many more opportunities) to implement these quantum-engineered devices, compared to the traditional electronic materials system. Here, the progress in quantum-engineered devices is reviewed and the opportunities/challenges of exploiting 2D materials are analyzed to highlight their unique quantum properties that enable novel energy-efficient devices, and useful insights to quantum device engineers and 2D-material scientists are provided.
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Affiliation(s)
- Arnab Pal
- ECE Department, University of California, Santa Barbara, Santa Barbara, CA, 93106, USA
| | - Shuo Zhang
- ECE Department, University of California, Santa Barbara, Santa Barbara, CA, 93106, USA
- College of ISEE, Zhejiang University, Hangzhou, 310027, China
| | - Tanmay Chavan
- ECE Department, University of California, Santa Barbara, Santa Barbara, CA, 93106, USA
| | - Kunjesh Agashiwala
- ECE Department, University of California, Santa Barbara, Santa Barbara, CA, 93106, USA
| | - Chao-Hui Yeh
- ECE Department, University of California, Santa Barbara, Santa Barbara, CA, 93106, USA
| | - Wei Cao
- ECE Department, University of California, Santa Barbara, Santa Barbara, CA, 93106, USA
| | - Kaustav Banerjee
- ECE Department, University of California, Santa Barbara, Santa Barbara, CA, 93106, USA
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27
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Huang L, Krasnok A, Alú A, Yu Y, Neshev D, Miroshnichenko AE. Enhanced light-matter interaction in two-dimensional transition metal dichalcogenides. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2022; 85:046401. [PMID: 34939940 DOI: 10.1088/1361-6633/ac45f9] [Citation(s) in RCA: 31] [Impact Index Per Article: 15.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/19/2021] [Accepted: 12/16/2021] [Indexed: 05/27/2023]
Abstract
Two-dimensional (2D) transition metal dichalcogenide (TMDC) materials, such as MoS2, WS2, MoSe2, and WSe2, have received extensive attention in the past decade due to their extraordinary electronic, optical and thermal properties. They evolve from indirect bandgap semiconductors to direct bandgap semiconductors while their layer number is reduced from a few layers to a monolayer limit. Consequently, there is strong photoluminescence in a monolayer (1L) TMDC due to the large quantum yield. Moreover, such monolayer semiconductors have two other exciting properties: large binding energy of excitons and valley polarization. These properties make them become ideal materials for various electronic, photonic and optoelectronic devices. However, their performance is limited by the relatively weak light-matter interactions due to their atomically thin form factor. Resonant nanophotonic structures provide a viable way to address this issue and enhance light-matter interactions in 2D TMDCs. Here, we provide an overview of this research area, showcasing relevant applications, including exotic light emission, absorption and scattering features. We start by overviewing the concept of excitons in 1L-TMDC and the fundamental theory of cavity-enhanced emission, followed by a discussion on the recent progress of enhanced light emission, strong coupling and valleytronics. The atomically thin nature of 1L-TMDC enables a broad range of ways to tune its electric and optical properties. Thus, we continue by reviewing advances in TMDC-based tunable photonic devices. Next, we survey the recent progress in enhanced light absorption over narrow and broad bandwidths using 1L or few-layer TMDCs, and their applications for photovoltaics and photodetectors. We also review recent efforts of engineering light scattering, e.g., inducing Fano resonances, wavefront engineering in 1L or few-layer TMDCs by either integrating resonant structures, such as plasmonic/Mie resonant metasurfaces, or directly patterning monolayer/few layers TMDCs. We then overview the intriguing physical properties of different van der Waals heterostructures, and their applications in optoelectronic and photonic devices. Finally, we draw our opinion on potential opportunities and challenges in this rapidly developing field of research.
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Affiliation(s)
- Lujun Huang
- School of Engineering and Information Technology, University of New South Wales, Canberra, ACT, 2600, Australia
| | - Alex Krasnok
- Department of Electrical and Computer Engineering, Florida International University, Miami, FL 33174, United States of America
| | - Andrea Alú
- Photonics Initiative, Advanced Science Research Center, City University of New York, New York, NY 10031, United States of America
- Physics Program, Graduate Center, City University of New York, New York, NY 10016, United States of America
| | - Yiling Yu
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, United States of America
| | - Dragomir Neshev
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Andrey E Miroshnichenko
- School of Engineering and Information Technology, University of New South Wales, Canberra, ACT, 2600, Australia
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28
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Abstract
Si-based complementary metal-oxide-semiconductor (CMOS) transistors for logic computing have represented the most essential foundation of digital electronic technologies for decades toward the modern information era. The continuous scaling down of the transistor feature size has promoted significant improvements in the computing performance while gradually tending to its limit. Ubiquitous intelligent technologies have quickly penetrated daily life, yielding a tremendous increase in highly data-centric computing applications. Hence, emerging logic devices extending and even transcending the existing CMOS technology are urgently needed to meet the rapidly growing demand for information processing capability, involving revolutionary innovations from material science and architecture design to device applications. This thus gives us the opportunity to realize logic devices for state-of-the-art computing that are fundamentally far beyond the current devices. In this Perspective, we discuss the recent innovative design strategies of emerging logic devices along with the opportunities and challenges, providing a promising avenue toward high-performance and diversiform logic computing in the post-Moore era.
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Affiliation(s)
- Ziqian Hao
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China
| | - Yang Yan
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China
| | - Yi Shi
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China
| | - Yun Li
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China
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29
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Pham PV, Bodepudi SC, Shehzad K, Liu Y, Xu Y, Yu B, Duan X. 2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges. Chem Rev 2022; 122:6514-6613. [PMID: 35133801 DOI: 10.1021/acs.chemrev.1c00735] [Citation(s) in RCA: 111] [Impact Index Per Article: 55.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
Abstract
A grand family of two-dimensional (2D) materials and their heterostructures have been discovered through the extensive experimental and theoretical efforts of chemists, material scientists, physicists, and technologists. These pioneering works contribute to realizing the fundamental platforms to explore and analyze new physical/chemical properties and technological phenomena at the micro-nano-pico scales. Engineering 2D van der Waals (vdW) materials and their heterostructures via chemical and physical methods with a suitable choice of stacking order, thickness, and interlayer interactions enable exotic carrier dynamics, showing potential in high-frequency electronics, broadband optoelectronics, low-power neuromorphic computing, and ubiquitous electronics. This comprehensive review addresses recent advances in terms of representative 2D materials, the general fabrication methods, and characterization techniques and the vital role of the physical parameters affecting the quality of 2D heterostructures. The main emphasis is on 2D heterostructures and 3D-bulk (3D) hybrid systems exhibiting intrinsic quantum mechanical responses in the optical, valley, and topological states. Finally, we discuss the universality of 2D heterostructures with representative applications and trends for future electronics and optoelectronics (FEO) under the challenges and opportunities from physical, nanotechnological, and material synthesis perspectives.
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Affiliation(s)
- Phuong V Pham
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Srikrishna Chanakya Bodepudi
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Khurram Shehzad
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Yuan Liu
- School of Physics and Electronics, Hunan University, Hunan 410082, China
| | - Yang Xu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Bin Yu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California, Los Angeles (UCLA), Los Angeles, California 90095-1569, United States
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30
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Kim SW, Kim HJ, Cheon S, Kim TH. Circular Dichroism of Emergent Chiral Stacking Orders in Quasi-One-Dimensional Charge Density Waves. PHYSICAL REVIEW LETTERS 2022; 128:046401. [PMID: 35148124 DOI: 10.1103/physrevlett.128.046401] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/04/2021] [Accepted: 12/22/2021] [Indexed: 06/14/2023]
Abstract
Chirality-driven optical properties in charge density waves are of fundamental and practical importance. Here, we investigate the interaction between circularly polarized light and emergent chiral stacking orders in quasi-one-dimensional (quasi-1D) charge-density waves (CDWs) with density-functional theory calculations. In our specific system, self-assembled In nanowires on a Si(111) surface, spontaneous mirror symmetry breaking leads to four symmetrically distinct degenerate quasi-1D CDW structures, which exhibit geometrical chirality. Such geometrical chirality may naturally induce optically active phenomena even when the quasi-1D CDW structures are stacked perpendicular to the CDW chain direction. Indeed, we find that left- and right-chiral stacking orders show distinct circular dichroism responses while a nonchiral stacking order has no circular dichroism. Such optical responses are attributed to the existence of glide mirror symmetry of the CDW stacking orders. Our findings suggest that the CDW chiral stacking orders can lead to diverse active optical phenomena such as chirality-dependent circular dichroism, which can be observed in scanning tunneling luminescence measurements with circularly polarized light.
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Affiliation(s)
- Sun-Woo Kim
- Department of Physics and Research Institute for Natural Science, Hanyang University, Seoul 04763, Korea
- Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon 34141, Korea
| | - Hyun-Jung Kim
- Peter Grünberg Institut and Institute for Advanced Simulation, Forschungszentrum Jülich and JARA, D-52425 Jülich, Germany
| | - Sangmo Cheon
- Department of Physics and Research Institute for Natural Science, Hanyang University, Seoul 04763, Korea
- Institute for High Pressure, Hanyang University, Seoul 04763, Korea
| | - Tae-Hwan Kim
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 37673, Korea
- MPPHC-CPM, Max Planck POSTECH/Korea Research Initiative, Pohang 37673, Korea
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31
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Nguyen LAT, Dhakal KP, Lee Y, Choi W, Nguyen TD, Hong C, Luong DH, Kim YM, Kim J, Lee M, Choi T, Heinrich AJ, Kim JH, Lee D, Duong DL, Lee YH. Spin-Selective Hole-Exciton Coupling in a V-Doped WSe 2 Ferromagnetic Semiconductor at Room Temperature. ACS NANO 2021; 15:20267-20277. [PMID: 34807575 DOI: 10.1021/acsnano.1c08375] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
While valley polarization with strong Zeeman splitting is the most prominent characteristic of two-dimensional (2D) transition metal dichalcogenide (TMD) semiconductors under magnetic fields, enhancement of the Zeeman splitting has been demonstrated by incorporating magnetic dopants into the host materials. Unlike Fe, Mn, and Co, V is a distinctive dopant for ferromagnetic semiconducting properties at room temperature with large Zeeman shifting of band edges. Nevertheless, little known is the excitons interacting with spin-polarized carriers in V-doped TMDs. Here, we report anomalous circularly polarized photoluminescence (CPL) in a V-doped WSe2 monolayer at room temperature. Excitons couple to V-induced spin-polarized holes to generate spin-selective positive trions, leading to differences in the populations of neutral excitons and trions between left and right CPL. Using transient absorption spectroscopy, we elucidate the origin of excitons and trions that are inherently distinct for defect-mediated and impurity-mediated trions. Ferromagnetic characteristics are further confirmed by the significant Zeeman splitting of nanodiamonds deposited on the V-doped WSe2 monolayer.
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Affiliation(s)
- Lan-Anh T Nguyen
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Krishna P Dhakal
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Yuhan Lee
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
| | - Wooseon Choi
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Tuan Dung Nguyen
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Chengyun Hong
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Dinh Hoa Luong
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
| | - Young-Min Kim
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jeongyong Kim
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Myeongwon Lee
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
| | - Taeyoung Choi
- Center for Quantum Nanoscience, Institute for Basic Science (IBS), Seoul 03760, Korea
- Department of Physics, Ewha Womans University, Seoul 03760, Korea
| | - Andreas J Heinrich
- Center for Quantum Nanoscience, Institute for Basic Science (IBS), Seoul 03760, Korea
- Department of Physics, Ewha Womans University, Seoul 03760, Korea
| | - Ji-Hee Kim
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Donghun Lee
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
| | - Dinh Loc Duong
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Young Hee Lee
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Department of Physics, Sungkyunkwan University, Suwon 16419, Republic of Korea
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Huang S, Li J, Fang J, Ding H, Huang W, Zhao X, Zheng Y. Self-Limiting Opto-Electrochemical Thinning of Transition-Metal Dichalcogenides. ACS APPLIED MATERIALS & INTERFACES 2021; 13:58966-58973. [PMID: 34851616 DOI: 10.1021/acsami.1c19163] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional monolayer and few-layer transition-metal dichalcogenides (TMDs) are promising for advanced electronic and photonic applications due to their extraordinary optoelectronic and mechanical properties. However, it has remained challenging to produce high-quality TMD thin films with controlled thickness and desired micropatterns, which are essential for their practical implementation in functional devices. In this work, a self-limiting opto-electrochemical thinning (sOET) technique is developed for on-demand thinning and patterning of TMD flakes at high efficiency. Benefiting from optically enhanced electrochemical reactions, sOET features a low operational optical power density of down to 70 μW μm-2 to avoid photodamage and thermal damage to the thinned TMD flakes. Through selective optical excitation with different laser wavelengths based on the thickness-dependent band gaps of TMD materials, sOET enables precise control over the final thickness of TMD flakes. With the capability of thickness control and site-specific patterning, our sOET offers an effective route to fabricating high-quality TMD materials for a broad range of applications in nanoelectronics, nanomechanics, and nanophotonics.
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Affiliation(s)
- Suichu Huang
- Key Laboratory of Micro-Systems and Micro-Structures Manufacturing of Ministry of Education and School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 15001, China
- Walker Department of Mechanical Engineering, Material Science and Engineering Program and Texas Material Institute, The University of Texas at Austin, Austin, Texas 78712, United States
| | - Jingang Li
- Walker Department of Mechanical Engineering, Material Science and Engineering Program and Texas Material Institute, The University of Texas at Austin, Austin, Texas 78712, United States
| | - Jie Fang
- Walker Department of Mechanical Engineering, Material Science and Engineering Program and Texas Material Institute, The University of Texas at Austin, Austin, Texas 78712, United States
| | - Hongru Ding
- Walker Department of Mechanical Engineering, Material Science and Engineering Program and Texas Material Institute, The University of Texas at Austin, Austin, Texas 78712, United States
| | - Wentao Huang
- Key Laboratory of Micro-Systems and Micro-Structures Manufacturing of Ministry of Education and School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 15001, China
| | - Xuezeng Zhao
- Key Laboratory of Micro-Systems and Micro-Structures Manufacturing of Ministry of Education and School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 15001, China
| | - Yuebing Zheng
- Walker Department of Mechanical Engineering, Material Science and Engineering Program and Texas Material Institute, The University of Texas at Austin, Austin, Texas 78712, United States
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Li S, Wang H, Wang J, Chen H, Shao L. Control of light-valley interactions in 2D transition metal dichalcogenides with nanophotonic structures. NANOSCALE 2021; 13:6357-6372. [PMID: 33885520 DOI: 10.1039/d0nr08000d] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Electronic valley in two-dimensional transition-metal dichalcogenides (2D TMDCs) offers a new degree of freedom for information storage and processing. The valley pseudospin can be optically encoded by photons with specific helicity, enabling the construction of electronic information devices with both high performance and low power consumption. Robust detection, manipulation and transport of the valley pseudospins at room temperature are still challenging because of the short lifetime of valley-polarized carriers and excitons. Integrating 2D TMDCs with nanophotonic objects such as plasmonic nanostructures provides a competitive solution to address the challenge. The research in this field is of practical interest and can also present rich physics of light-matter interactions. In this minireview, recent progress on using nanophotonic strategies to enhance the valley polarization degree, especially at room temperature, is highlighted. Open questions, major challenges, and interesting future developments in manipulating the valley information in 2D semiconductors with the help of nanophotonic structures will also be discussed.
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Affiliation(s)
- Shasha Li
- Beijing Computational Science Research Center, Beijing 100193, China.
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Ai H, Liu D, Geng J, Wang S, Lo KH, Pan H. Theoretical evidence of the spin-valley coupling and valley polarization in two-dimensional MoSi 2X 4 (X = N, P, and As). Phys Chem Chem Phys 2021; 23:3144-3151. [PMID: 33496290 DOI: 10.1039/d0cp05926a] [Citation(s) in RCA: 31] [Impact Index Per Article: 10.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/17/2022]
Abstract
Very recently, the centimeter-scale MoSi2N4 monolayer was synthesized experimentally and exhibited a semiconducting nature with high mobility (Hong et al., Science, 2020, 369, 670-674). Here, we show that MoSi2N4 and its analogues, MoSi2P4 and MoSi2As4, are potential two-dimensional (2D) materials for valleytronics based on first-principles calculations. We demonstrate that the intrinsic inversion symmetry breaking and strong spin-orbital coupling lead to the remarkable spin-valley coupling in the inequivalent valleys at K and K' points, which result in not only the valley-contrasting transport properties, but also the spin and valley coupled optical selection rules. Moreover, the in-plane strain can tune the bandgaps and spin splitting or even induce an indirect-to-direct bandgap transition for promising application in the strain-tunable valleytronics. We find that the valley polarization can be generated by doping magnetic element. Our findings offer theoretical insight into the exotic physical properties of novel MoSi2N4-family materials beyond transition metal dichalcogenides.
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Affiliation(s)
- Haoqiang Ai
- Department of Electromechanical Engineering, Faculty of Science and Technology, University of Macau, Macao SAR, 999078, P. R. China.
| | - Di Liu
- Institute of Applied Physics and Materials Engineering, University of Macau, Macao SAR, 999078, P. R. China.
| | - Jiazhong Geng
- Institute of Applied Physics and Materials Engineering, University of Macau, Macao SAR, 999078, P. R. China.
| | - Shuangpeng Wang
- Institute of Applied Physics and Materials Engineering, University of Macau, Macao SAR, 999078, P. R. China.
| | - Kin Ho Lo
- Department of Electromechanical Engineering, Faculty of Science and Technology, University of Macau, Macao SAR, 999078, P. R. China.
| | - Hui Pan
- Institute of Applied Physics and Materials Engineering, University of Macau, Macao SAR, 999078, P. R. China. and Department of Physics and Chemistry, Faculty of Science and Technology, University of Macau, Macao SAR, 999078, P. R. China
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Zhao S, Li X, Dong B, Wang H, Wang H, Zhang Y, Han Z, Zhang H. Valley manipulation in monolayer transition metal dichalcogenides and their hybrid systems: status and challenges. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2021; 84:026401. [PMID: 33440363 DOI: 10.1088/1361-6633/abdb98] [Citation(s) in RCA: 20] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Recently, the emerging conceptual valley-related devices have attracted much attention due to the progress on generating, controlling, and detecting the valley degree of freedom in the transition metal dichalcogenide (TMD) monolayers. In general, it is known that achieving valley degree of freedom with long valley lifetime is crucial in the implementation of valleytronic devices. Here, we provide a brief introduction of the basic understandings of valley degree of freedom. We as well review the recent experimental advancement in the modulation of valley degree of freedom. The strategies include optical/magnetic/electric field tuning, moiré patterns, plasmonic metasurface, defects and strain engineering. In addition, we summarize the corresponding mechanisms, which can help to obtain large degree of polarization and long valley lifetimes in monolayer TMDs. Based on these methods, two-dimensional valley-optoelectronic systems based on TMD heterostructures can be constructed, providing opportunities for such as the new paradigm in data processing and transmission. Challenges and perspectives on the development of valleytronics are highlighted as well.
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Affiliation(s)
- Siwen Zhao
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, People's Republic of China
- College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Xiaoxi Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, People's Republic of China
- School of Material Science and Engineering, University of Science and Technology of China, Hefei 230026, People's Republic of China
| | - Baojuan Dong
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Opto-Electronics, Shanxi University, Taiyuan 030006, People's Republic of China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, People's Republic of China
| | - Huide Wang
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Hanwen Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, People's Republic of China
- School of Material Science and Engineering, University of Science and Technology of China, Hefei 230026, People's Republic of China
| | - Yupeng Zhang
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Zheng Han
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Opto-Electronics, Shanxi University, Taiyuan 030006, People's Republic of China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, People's Republic of China
| | - Han Zhang
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, People's Republic of China
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Suntornwipat N, Majdi S, Gabrysch M, Kovi KK, Djurberg V, Friel I, Twitchen DJ, Isberg J. A Valleytronic Diamond Transistor: Electrostatic Control of Valley Currents and Charge-State Manipulation of NV Centers. NANO LETTERS 2021; 21:868-874. [PMID: 33337898 PMCID: PMC7872423 DOI: 10.1021/acs.nanolett.0c04712] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/28/2020] [Revised: 12/08/2020] [Indexed: 05/22/2023]
Abstract
The valley degree of freedom in many-valley semiconductors provides a new paradigm for storing and processing information in valleytronic and quantum-computing applications. Achieving practical devices requires all-electric control of long-lived valley-polarized states, without the use of strong external magnetic fields. Because of the extreme strength of the carbon-carbon bond, diamond possesses exceptionally stable valley states that provide a useful platform for valleytronic devices. Using ultrapure single-crystalline diamond, we demonstrate electrostatic control of valley currents in a dual-gate field-effect transistor, where the electrons are generated with a short ultraviolet pulse. The charge current and the valley current measured at the receiving electrodes are controlled separately by varying the gate voltages. We propose a model to interpret experimental data, based on drift-diffusion equations coupled through rate terms, with the rates computed by microscopic Monte Carlo simulations. As an application, we demonstrate valley-current charge-state modulation of nitrogen-vacancy centers.
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Affiliation(s)
- Nattakarn Suntornwipat
- Division
for Electricity, Department of Electrical Engineering, Uppsala University, Box 65, 751 03, Uppsala, Sweden
| | - Saman Majdi
- Division
for Electricity, Department of Electrical Engineering, Uppsala University, Box 65, 751 03, Uppsala, Sweden
| | - Markus Gabrysch
- Division
for Electricity, Department of Electrical Engineering, Uppsala University, Box 65, 751 03, Uppsala, Sweden
| | - Kiran Kumar Kovi
- Division
for Electricity, Department of Electrical Engineering, Uppsala University, Box 65, 751 03, Uppsala, Sweden
- Center
for Nanoscale Materials, Argonne National
Laboratory, Argonne, Illinois 60439, United
States
| | - Viktor Djurberg
- Division
for Electricity, Department of Electrical Engineering, Uppsala University, Box 65, 751 03, Uppsala, Sweden
| | - Ian Friel
- Global
Innovation Centre, Element Six, Fermi Ave, Harwell Oxford, Oxfordshire OX11 0QR, United Kingdom
| | - Daniel J. Twitchen
- Global
Innovation Centre, Element Six, Fermi Ave, Harwell Oxford, Oxfordshire OX11 0QR, United Kingdom
| | - Jan Isberg
- Division
for Electricity, Department of Electrical Engineering, Uppsala University, Box 65, 751 03, Uppsala, Sweden
- E-mail:
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Affiliation(s)
- Alex Krasnok
- Advanced Science Research Center, City University of New York, New York, NY, USA.
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