Hartman effect for spin waves in exchange regime

Controllable Hartman effect by vortex beam in a one dimensional photonic crystal doped by graphene quantum dots

The Hartman effect is studied in a one dimensional photonic crystal doped with graphene quantum dots. It is shown that the Hartman effect can be switched from negative to positive by increasing the Rabi-frequency of the controlling field and also by manipulating the relative phase of the applied fields. The effect of the vortex beam on the Hartman effect is also presented. We show that the orbital angular momentum (OAM) and the azimuthal phase of the vortex beam do not affect the probe filed transmission while they change the Hartman effect from positive to negative.

Voltage controlled on-demand magnonic nanochannels

Development of energy-efficient on-demand magnonic nanochannels (MNCs) can revolutionize on-chip data communication and processing. We have developed a dynamic MNC array by periodically tailoring perpendicular magnetic anisotropy using the electric field. Brillouin light scattering spectroscopy is used to probe the spin wave (SW) dispersion of MNCs formed by applying a static electric field at the CoFeB/MgO interface through the one-dimensional stripe-like array of indium tin oxide electrodes placed on top of Ta/CoFeB/MgO/Al2O3 heterostructures. Magnonic bands, consisting of two SW frequency modes, appear with a bandgap under the application of moderate gate voltage, which can be switched off by withdrawing the voltage. The experimental results are reproduced by plane wave method-based numerical calculations, and simulated SW mode profiles show propagating SWs through nanochannels with different magnetic properties. The anticrossing between these two modes gives rise to the observed magnonic bandgap.

Klein tunnelling and Hartman effect in graphene junctions with proximity exchange field

Tunnelling of electrons in graphene-based junctions is studied theoretically. Graphene is assumed to be deposited either directly on a ferromagnetic insulator or on a few atomic layers of boron nitride which separate graphene from a metallic ferromagnetic substrate. Such junctions can be formed by appropriate external gating of the corresponding system. To describe low-energy electronic states near the Dirac points, certain effective Hamiltonians available in the relevant literature are used. These Hamiltonians include staggered potential and exchange interaction due to ferromagnetic substrates. Tunnelling in the systems under consideration is then spin-dependent. The main focus is on Klein tunnelling and also on the group delay and the associated Hartman effect. The impact of a gap induced in the spectrum at the Dirac points on tunnelling is analysed in detail.