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Fasani D, Barbieri L, Villa A, Palladini D, Malgesini R, D'Avanzo G, Buccella G, Gadia P. Diagnostics of Internal Defects in Composite Overhead Insulators Using an Optic E-Field Sensor. SENSORS (BASEL, SWITZERLAND) 2024; 24:1359. [PMID: 38474895 DOI: 10.3390/s24051359] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/23/2024] [Revised: 02/16/2024] [Accepted: 02/18/2024] [Indexed: 03/14/2024]
Abstract
Composite insulators for high-voltage overhead lines have better performances and are lighter than traditional designs, especially in heavily polluted areas. However, since it is a relatively recent technology, reliable methods to perform live-line diagnostics are still under development, especially with regard to internal defects, which provide few external symptoms. Thermal cameras can be employed, but their use is not always straightforward as the sun radiation can hide the thermal footprint of internal degenerative effects. In this work, an optical E-field sensor has been used to diagnose the internal defects of a set of composite insulators (bandwidth 200 mHz-50 MHz, min. detectable E-field 100 V/m). Moreover, a modelling activity using finite elements has been carried out to identify the possible nature of the defects by comparing experimental E-field profiles with those simulated assuming a specific defect geometry. The results show that the sensor can detect the presence of an internal defect, since its presence distorts the E-field profile when compared to the profile of a sound insulator. Moreover, the measured E-field profiles are compatible with the corresponding simulated ones when a conductive defect is considered. However, it was observed that a defect whose conductivity is not at least two orders of magnitude greater than the conductivity of the surroundings remains undetected.
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Affiliation(s)
- Damiano Fasani
- RSE SpA-Ricerca sul Sistema Energetico, Via Raffaele Rubattino, 54, 20134 Milano, Italy
| | - Luca Barbieri
- RSE SpA-Ricerca sul Sistema Energetico, Via Raffaele Rubattino, 54, 20134 Milano, Italy
| | - Andrea Villa
- RSE SpA-Ricerca sul Sistema Energetico, Via Raffaele Rubattino, 54, 20134 Milano, Italy
| | - Daniele Palladini
- RSE SpA-Ricerca sul Sistema Energetico, Via Raffaele Rubattino, 54, 20134 Milano, Italy
| | - Roberto Malgesini
- RSE SpA-Ricerca sul Sistema Energetico, Via Raffaele Rubattino, 54, 20134 Milano, Italy
| | - Giovanni D'Avanzo
- RSE SpA-Ricerca sul Sistema Energetico, Via Raffaele Rubattino, 54, 20134 Milano, Italy
| | - Giacomo Buccella
- RSE SpA-Ricerca sul Sistema Energetico, Via Raffaele Rubattino, 54, 20134 Milano, Italy
| | - Paolo Gadia
- RSE SpA-Ricerca sul Sistema Energetico, Via Raffaele Rubattino, 54, 20134 Milano, Italy
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Picelli L, van Veldhoven PJ, Verhagen E, Fiore A. Hybrid electronic-photonic sensors on a fibre tip. NATURE NANOTECHNOLOGY 2023; 18:1162-1167. [PMID: 37415039 DOI: 10.1038/s41565-023-01435-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/15/2022] [Accepted: 05/28/2023] [Indexed: 07/08/2023]
Abstract
Most sensors rely on a change in an electrical parameter to the measurand of interest. Their direct readout via an electrical wire and an electronic circuit is, in principle, technically simple, but it is subject to electromagnetic interference, preventing its application in several industrial environments. Fibre-optic sensors can overcome these limitations because the sensing region and readout region can be spaced apart, sometimes by kilometres. However, fibre-optic sensing typically requires complex interrogation equipment due to the extremely high wavelength accuracy that is required. Here we combine the sensitivity and flexibility of electronic sensors with the advantages of optical readout, by demonstrating a hybrid electronic-photonic sensor integrated on the tip of a fibre. The sensor is based on an electro-optical nanophotonic structure that uses the strong co-localization of static and electromagnetic fields to simultaneously achieve a voltage-to-wavelength transduction and a modulation of reflectance. We demonstrate the possibility of reading the current-voltage characteristics of the electro-optic diode through the fibre and therefore its changes due to the environment. As a proof of concept, we show the application of this method to cryogenic temperature sensing. This approach allows fibre-optic sensing to take advantage of the vast toolbox of electrical sensing modalities for many different measurands.
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Affiliation(s)
- L Picelli
- Department of Applied Physics and Science Education, and Eindhoven Hendrik Casimir Institute, Eindhoven University of Technology, Eindhoven, The Netherlands.
| | - P J van Veldhoven
- Department of Applied Physics and Science Education, and Eindhoven Hendrik Casimir Institute, Eindhoven University of Technology, Eindhoven, The Netherlands
| | - E Verhagen
- Department of Applied Physics and Science Education, and Eindhoven Hendrik Casimir Institute, Eindhoven University of Technology, Eindhoven, The Netherlands
- Center for Nanophotonics, AMOLF, Amsterdam, The Netherlands
| | - A Fiore
- Department of Applied Physics and Science Education, and Eindhoven Hendrik Casimir Institute, Eindhoven University of Technology, Eindhoven, The Netherlands
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Electric Field Sensor Based on High Q Fano Resonance of Nano-Patterned Electro-Optic Materials. PHOTONICS 2022. [DOI: 10.3390/photonics9060431] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/10/2022]
Abstract
This paper presents theoretical studies of Fano resonance based electric-field (E-field) sensors. E-field sensor based on two electro-optical (EO) materials i.e., barium titanate (BaTiO3, BTO) nanoparticles and relaxor ferroelectric material Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) combined with nanostructure are studied. As for the BTO based E-field sensor, a configuration of filling the BTO nanoparticles into a nano-patterned thin film silicon is proposed. The achieved resonance quality factor (Q) is 11,855 and a resonance induced electric field enhancement factor is of around 105. As for the design of PMN-PT based E-field sensor, a configuration by combining two square lattice air holes in PMN-PT thin film but with one offsetting hole left is chosen. The achieved resonance Q is of 9,273 and an electric field enhancement factor is of around 96. The resonance wavelength shift sensitivity of PMN-PT nanostructured can reach up to 4.768 pm/(V/m), while the BTO based nanostructure has a sensitivity of 0.1213 pm/(V/m). If a spectrum analyzer with 0.1 pm resolution is considered, then the minimum detection of the electric field Emin is 20 mV/m and 0.82 V/m for PMN-PT and BTO based nanostructures, respectively. The nano-patterned E-field sensor studied here are all dielectric, it has therefore the advantage of large measurement bandwidth, high measurement fidelity, high spatial resolution and high sensitivity.
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Togan E, Li Y, Faelt S, Wegscheider W, Imamoglu A. Polariton Electric-Field Sensor. PHYSICAL REVIEW LETTERS 2020; 125:067402. [PMID: 32845676 DOI: 10.1103/physrevlett.125.067402] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/07/2020] [Revised: 06/02/2020] [Accepted: 07/08/2020] [Indexed: 06/11/2023]
Abstract
We experimentally demonstrate a dipolar polariton based electric-field sensor. We tune and optimize the sensitivity of the sensor by varying the dipole moment of polaritons. We show polariton interactions play an important role in determining the conditions for optimal electric-field sensing, and achieve a sensitivity of 0.12 V m^{-1} Hz^{-0.5}. Finally, we apply the sensor to illustrate that excitation of polaritons modifies the electric field in a spatial region much larger than the optical excitation spot.
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Affiliation(s)
- Emre Togan
- Institute of Quantum Electronics, ETH Zurich, CH-8093 Zurich, Switzerland
| | - Yufan Li
- Institute of Quantum Electronics, ETH Zurich, CH-8093 Zurich, Switzerland
| | - Stefan Faelt
- Institute of Quantum Electronics, ETH Zurich, CH-8093 Zurich, Switzerland
- Solid State Physics Laboratory, ETH Zurich, CH-8093 Zurich, Switzerland
| | | | - Atac Imamoglu
- Institute of Quantum Electronics, ETH Zurich, CH-8093 Zurich, Switzerland
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Abstract
For sensors based on the electromagnetic resonance whether the surface plasmon resonance (SPR) or localized surface plasmon resonance (LSPR), enhancing the light-matter interactions is the most critical and important way to improve their performance. Plasmonic nano-arrays are a kind of periodic metal or dielectric nanostructure formed by nanofabrication technology and can effectively enhance the light-matter interactions by tuning structural parameters to cause different optical effects due to their ultra-high degree of freedom. At the same time, a plug-and-play, remote microsensor suitable for limited environments (such as in vivo systems) may be realized due to the rise of lab-on-fiber technology and the progress of nanofabrication technology for unconventional substrates (such as an optical fiber tip). In this paper, the advantages and disadvantages of different nanofabrication technologies are briefly introduced and compared firstly, and then the applications of optical fiber sensors (OFS) based on different plasmonic nano-arrays are reviewed. Plasmonic nano-array OFS are divided into two categories: refractive index sensors based on the sensitivity of the array to the surrounding environment and surface enhanced Raman scattering (SERS) sensors based on the enhancement ability of the local electric field around the array. In this review, the present sensors are compared and analyzed from the aspects of the geometry, material and dimensions of plasmonic nano-arrays and the main research directions and progress are summarized. Finally, the future development trend is proposed.
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Affiliation(s)
- Qi Wang
- College of Information Science and Engineering, Northeastern University, Shenyang 110819, China.
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