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Park SH, Kim TJ, Lee HE, Ma BS, Song M, Kim MS, Shin JH, Lee SH, Lee JH, Kim YB, Nam KY, Park HJ, Kim TS, Lee KJ. Universal selective transfer printing via micro-vacuum force. Nat Commun 2023; 14:7744. [PMID: 38008810 PMCID: PMC10679119 DOI: 10.1038/s41467-023-43342-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/28/2023] [Accepted: 11/07/2023] [Indexed: 11/28/2023] Open
Abstract
Transfer printing of inorganic thin-film semiconductors has attracted considerable attention to realize high-performance soft electronics on unusual substrates. However, conventional transfer technologies including elastomeric transfer printing, laser-assisted transfer, and electrostatic transfer still have challenging issues such as stamp reusability, additional adhesives, and device damage. Here, a micro-vacuum assisted selective transfer is reported to assemble micro-sized inorganic semiconductors onto unconventional substrates. 20 μm-sized micro-hole arrays are formed via laser-induced etching technology on a glass substrate. The vacuum controllable module, consisting of a laser-drilled glass and hard-polydimethylsiloxane micro-channels, enables selective modulation of micro-vacuum suction force on microchip arrays. Ultrahigh adhesion switchability of 3.364 × 106, accomplished by pressure control during the micro-vacuum transfer procedure, facilitates the pick-up and release of thin-film semiconductors without additional adhesives and chip damage. Heterogeneous integration of III-V materials and silicon is demonstrated by assembling microchips with diverse shapes and sizes from different mother wafers on the same plane. Multiple selective transfers are implemented by independent pressure control of two separate vacuum channels with a high transfer yield of 98.06%. Finally, flexible micro light-emitting diodes and transistors with uniform electrical/optical properties are fabricated via micro-vacuum assisted selective transfer.
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Affiliation(s)
- Sang Hyun Park
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Tae Jin Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Han Eol Lee
- Division of Advanced Materials Engineering, Jeonbuk National University, 567 Baekje-daero, Deokjin-gu, Jeonju-si, Jeollabuk-do, 54896, Republic of Korea
| | - Boo Soo Ma
- Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Myoung Song
- Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Min Seo Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Jung Ho Shin
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Seung Hyung Lee
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Jae Hee Lee
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Young Bin Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Ki Yun Nam
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Hong-Jin Park
- BSP Co., Ltd., 41-4, 170 Burim-ro, Dongan-gu, Anyang-si, Gyeonggi-do, 14055, Republic of Korea
| | - Taek-Soo Kim
- Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Keon Jae Lee
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea.
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Wang Y, Li G, Gu X, Kong Y, Zheng Y, Shi Y. Responsibility optimization of a high-speed InP/InGaAs photodetector with a back reflector structure. OPTICS EXPRESS 2022; 30:4919-4929. [PMID: 35209464 DOI: 10.1364/oe.447596] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/17/2021] [Accepted: 01/15/2022] [Indexed: 06/14/2023]
Abstract
Top-illuminated PIN photodetectors (PDs) are widely utilized in telecommunication systems, and more efforts have been focused on optimizing the optical responsibility and bandwidth for high-speed and capacity applications. In this work, we develop an integrated top-illuminated InP/InGaAs PIN PD with a back reflector by using a microtransfer printing (µ-TP) process. An improved µ-TP process, where the tether of silicon nitride instead of photoresist, is selected to support an underetched III-V device on an InP substrate before transfer. According to theoretical simulations and experimental measurements, the seamless integration of the PD with a back reflector through µ-TP process makes full use of the 2nd or even multiple reflecting light in the absorption layer to optimize the maximum responsibility. The integrated device with a 5 µm square p-mesa possesses a high optical responsibility of 0.78 A/W and 3 dB bandwidth of 54 GHz using a 500 nm i-InGaAs absorption layer. The present approach for top-illuminated PIN PDs demonstrates an advanced route in which a thin intrinsic layer is available for application in high-performance systems.
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Yulianto N, Refino AD, Syring A, Majid N, Mariana S, Schnell P, Wahyuono RA, Triyana K, Meierhofer F, Daum W, Abdi FF, Voss T, Wasisto HS, Waag A. Wafer-scale transfer route for top-down III-nitride nanowire LED arrays based on the femtosecond laser lift-off technique. MICROSYSTEMS & NANOENGINEERING 2021; 7:32. [PMID: 34567746 PMCID: PMC8433433 DOI: 10.1038/s41378-021-00257-y] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/07/2021] [Revised: 02/24/2021] [Accepted: 02/24/2021] [Indexed: 05/31/2023]
Abstract
The integration of gallium nitride (GaN) nanowire light-emitting diodes (nanoLEDs) on flexible substrates offers opportunities for applications beyond rigid solid-state lighting (e.g., for wearable optoelectronics and bendable inorganic displays). Here, we report on a fast physical transfer route based on femtosecond laser lift-off (fs-LLO) to realize wafer-scale top-down GaN nanoLED arrays on unconventional platforms. Combined with photolithography and hybrid etching processes, we successfully transferred GaN blue nanoLEDs from a full two-inch sapphire substrate onto a flexible copper (Cu) foil with a high nanowire density (~107 wires/cm2), transfer yield (~99.5%), and reproducibility. Various nanoanalytical measurements were conducted to evaluate the performance and limitations of the fs-LLO technique as well as to gain insights into physical material properties such as strain relaxation and assess the maturity of the transfer process. This work could enable the easy recycling of native growth substrates and inspire the development of large-scale hybrid GaN nanowire optoelectronic devices by solely employing standard epitaxial LED wafers (i.e., customized LED wafers with additional embedded sacrificial materials and a complicated growth process are not required).
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Affiliation(s)
- Nursidik Yulianto
- Institute of Semiconductor Technology (IHT), Technische Universität Braunschweig, Hans-Sommer-Straße 66, Braunschweig, 38106 Germany
- Laboratory for Emerging Nanometrology (LENA), Technische Universität Braunschweig, Langer Kamp 6, Braunschweig, 38106 Germany
- Research Center for Physics, Indonesian Institute of Sciences (LIPI), Jl. Kawasan Puspiptek No. 441-442, Tangerang, Selatan 15314 Indonesia
| | - Andam Deatama Refino
- Institute of Semiconductor Technology (IHT), Technische Universität Braunschweig, Hans-Sommer-Straße 66, Braunschweig, 38106 Germany
- Laboratory for Emerging Nanometrology (LENA), Technische Universität Braunschweig, Langer Kamp 6, Braunschweig, 38106 Germany
- Engineering Physics Program, Institut Teknologi Sumatera (ITERA), Jl. Terusan Ryacudu, Way Huwi, Lampung Selatan, Lampung 35365 Indonesia
| | - Alina Syring
- Institute of Semiconductor Technology (IHT), Technische Universität Braunschweig, Hans-Sommer-Straße 66, Braunschweig, 38106 Germany
- Laboratory for Emerging Nanometrology (LENA), Technische Universität Braunschweig, Langer Kamp 6, Braunschweig, 38106 Germany
| | - Nurhalis Majid
- Research Center for Physics, Indonesian Institute of Sciences (LIPI), Jl. Kawasan Puspiptek No. 441-442, Tangerang, Selatan 15314 Indonesia
- Institute of Energy Research and Physical Technologies, Technische Universität Clausthal, Leibnizstraße 4, Clausthal-Zellerfeld, 38678 Germany
| | - Shinta Mariana
- Institute of Semiconductor Technology (IHT), Technische Universität Braunschweig, Hans-Sommer-Straße 66, Braunschweig, 38106 Germany
- Laboratory for Emerging Nanometrology (LENA), Technische Universität Braunschweig, Langer Kamp 6, Braunschweig, 38106 Germany
| | - Patrick Schnell
- Institute for Solar Fuels, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, Berlin, 14109 Germany
| | - Ruri Agung Wahyuono
- Department of Engineering Physics, Institut Teknologi Sepuluh Nopember (ITS), Jl. Arif Rahman Hakim, ITS Campus Sukolilo, Surabaya, 60111 Indonesia
| | - Kuwat Triyana
- Department of Physics, Faculty of Mathematics and Natural Sciences, Universitas Gadjah Mada, Sekip Utara PO Box BLS 21, Yogyakarta, 55281 Indonesia
| | - Florian Meierhofer
- Institute of Semiconductor Technology (IHT), Technische Universität Braunschweig, Hans-Sommer-Straße 66, Braunschweig, 38106 Germany
- Laboratory for Emerging Nanometrology (LENA), Technische Universität Braunschweig, Langer Kamp 6, Braunschweig, 38106 Germany
| | - Winfried Daum
- Institute of Energy Research and Physical Technologies, Technische Universität Clausthal, Leibnizstraße 4, Clausthal-Zellerfeld, 38678 Germany
| | - Fatwa F. Abdi
- Institute for Solar Fuels, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, Berlin, 14109 Germany
| | - Tobias Voss
- Institute of Semiconductor Technology (IHT), Technische Universität Braunschweig, Hans-Sommer-Straße 66, Braunschweig, 38106 Germany
- Laboratory for Emerging Nanometrology (LENA), Technische Universität Braunschweig, Langer Kamp 6, Braunschweig, 38106 Germany
| | - Hutomo Suryo Wasisto
- Institute of Semiconductor Technology (IHT), Technische Universität Braunschweig, Hans-Sommer-Straße 66, Braunschweig, 38106 Germany
- Laboratory for Emerging Nanometrology (LENA), Technische Universität Braunschweig, Langer Kamp 6, Braunschweig, 38106 Germany
| | - Andreas Waag
- Institute of Semiconductor Technology (IHT), Technische Universität Braunschweig, Hans-Sommer-Straße 66, Braunschweig, 38106 Germany
- Laboratory for Emerging Nanometrology (LENA), Technische Universität Braunschweig, Langer Kamp 6, Braunschweig, 38106 Germany
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