Piezo Voltage Controlled Planar Hall Effect Devices

Selectively Controlled Ferromagnets by Electric Fields in van der Waals Ferromagnetic Heterojunctions

Charge transfer plays a key role at the interfaces of heterostructures, which can affect electronic structures and ultimately the physical properties of the materials. However, charge transfer is difficult to manipulate externally once the interface is formed. The recently discovered van der Waals ferromagnets with atomically sharp interfaces provided a perfect platform for the electrical control of interfacial charge transfer. Here, we report magnetoresistance experiments revealing electrically tunable charge transfer in Fe₃GeTe₂/Cr₂Ge₂Te₆/Fe₃GeTe₂ all-magnetic van der Waals heterostructures, which can be exploited to selectively modify the switching fields of the top or bottom Fe₃GeTe₂ electrodes. The directional charge transfer from metallic Fe₃GeTe₂ to semiconducting Cr₂Ge₂Te₆ is revealed by first-principles calculations, which remarkably modifies the magnetic anisotropy energy of Fe₃GeTe₂, leading to the dramatically suppressed coercivity. The electrically selective control of magnetism demonstrated in this study could stimulate the development of spintronic devices based on van der Waals magnets.

Dual-axis control of magnetic anisotropy in a single crystal Co2MnSi thin film through piezo-voltage-induced strain

Voltage controlled magnetic anisotropy (VCMA) has been considered as an effective method in traditional magnetic devices with lower power consumption. In this article, we have investigated the dual-axis control of magnetic anisotropy in Co₂MnSi/GaAs/PZT hybrid heterostructures through piezo-voltage-induced strain using longitudinal magneto-optical Kerr effect (LMOKE) microscopy. The major modification of in-plane magnetic anisotropy of the Co₂MnSi thin film is controlled obviously by the piezo-voltages of the lead zirconate titanate (PZT) piezotransducer, accompanied by the coercivity field and magnetocrystalline anisotropy significantly manipulated. Because in-plane cubic magnetic anisotropy and uniaxial magnetic anisotropy coexist in the Co₂MnSi thin film, the initial double easy axes of cubic split to an easiest axis (square loop) and an easier axis (two-step loop). While the stress direction is parallel to the [1-10] easiest axis (sample I), the square loop of the [1-10] direction could transform to a two-step loop under the negative piezo-voltages (compressed state). At the same time, the initial two-step loop of the [110] axis simultaneously changes to a square loop (the easiest axis). Otherwise, we designed and fabricated the sample II in which the PZT stress is parallel to the [110] two-step axis. The phenomenon of VCMA was also obtained along the [110] and [1-10] directions. However, the manipulated results of sample II were in contrast to those of the sample I under the piezo-voltages. Thus, an effective dual-axis regulation of the in-plane magnetization rotation was demonstrated in this work. Such a finding proposes a more optimized method for the magnetic logic gates and memories based on voltage-controlled magnetic anisotropy in the future.

Boosting Polarization Switching-Induced Current Injection by Mechanical Force in Ferroelectric Thin Films

When scaling the lateral size of a ferroelectric random access memory (FeRAM) device down to the nanometer range, the polarization switching-induced displacement current becomes small and challenging to detect, which greatly limits the storage density of FeRAM. Here, we report the observation of significantly enhanced injection currents, much larger than typical switching currents, induced by polarization switching in BiFeO₃ thin films via conductive atomic force microscopy. Interestingly, this injected current can be effectively modulated by applying mechanical force. As the loading force increases from ∼50 to ∼750 nN, the magnitude of the injected current increases and the critical voltage to trigger the current injection decreases. Notably, changing the loading force by an order of magnitude increases the peak current by 2-3 orders of magnitude. The mechanically boosted injected current could be useful for the development of high-density FeRAM devices. The mechanical modulation of the injected current may be attributed to the mechanical force-induced changes in the barrier height and interfacial layer width.

Non-Volatile Regulation of Magnetism via Electric Fields in Polycrystal FeSi/(011) PMN-0.32PT Heterostructures

The choice and configuration of the ferroelectric (FE) substrate and the ferromagnetic (FM) layer in FM/FE heterostructures play an important role in magnetism modification with regard to amplitude and efficiency. In this study, we fabricated FeSi films on low crystalline (011) [Pb(Mg1/3Nb2/3)O3]0.7-[PbTiO3]0.3 (PMN-0.32PT) using radio frequency magnetron sputtering. In the annealed FeSi/(011) PMN-0.32PT heterostructures, the FeSi film presented with a (011) preferred orientated polycrystalline structure and low magnetocrystalline anisotropy. Both loop-like and butterfly-like magnetism modifications were observed by applying bipolar electric fields, and the weak and abnormal electrically mediated magnetism behaviors were significantly different from the prominent magnetic anisotropy transition in FeSi/(011) PMN-0.3PT. The comparative analyses suggest that the resulting high-quality single-crystalline PMN-xPT and FM films with low coercivity are of great significance for exploring giant, reversible, and non-volatile magnetism regulation.

Voltage control of magnetic domain wall injection into strain-mediated multiferroic heterostructures

Effective control of domain wall (DW) injection into magnetic nanowires is of great importance for future novel device applications in spintronics, and currently relies on magnetization switching by the local external magnetic field obtained from metal contact lines or a spin-transfer torque (STT) effect from spin-polarized current. However, the external field is an obstacle for realizing practical spintronic devices with all-electric operation, and high current density can occasionally damage the devices. In this work, voltage controlled in-plane magnetic DW injection into a magnetic nanowire in the strain-mediated multiferroic heterostructures is studied by means of fully coupled micromagnetic-mechanical Finite Element Method (FEM) simulations. We propose an engineered shaped nano-magnet on a piezoelectric thin film in which a 180° magnetization rotation in the DW injection region is accomplished with in-plane piezostrain and magnetic shape anisotropy, thereby, leading to a DW injection into the nanowire. In this architecture, we computationally demonstrate repeated creation of DWs by voltage-induced strains without using any magnetic fields. Our FEM simulation results demonstrated an ultralow area energy consumption per injection (∼52.48 mJ m^-2), which is drastically lower than the traditional magnetic field and STT driven magnetization switching. A fast-overall injection time within ∼3.4 ns under continuous injection is also demonstrated. Further reduction of energy consumption and injection time can be achieved by optimization of the structure and material selections. The present design and computational analyses can provide an additional efficient method to realize low-power and high-speed spintronic and magnonic devices.

Modulating the Spin Seebeck Effect in Co2FeAl Heusler Alloy for Sensor Applications

The thermoelectric conversion technique has been explored in a broad range of heat-flow sensors. In this context, the Spin Seebeck Effect emerges as an attractive candidate for biosensor applications, not only for the sensibility improvement but also for the power-saving electronic devices development. Here, we investigate the Longitudinal Spin Seebeck Effect in films with a Co2FeAl/W bilayer structure grown onto GaAs (100) substrate, systems having induced uniaxial magnetic anisotropy combined with cubic magnetic anisotropy. From numerical calculations, we address the magnetic behavior and thermoelectric response of the films. By comparing experiment and theory, we explore the possibility of modulating a thermoelectric effect by magnetic anisotropy. We show that the thermoelectric voltage curves may be modulated by the association of magnetic anisotropy induction and experimental parameters employed in the LSSE experiment.

Multilevel information storage using magnetoelastic layer stacks

The use of voltages to control magnetisation via the inverse magnetostriction effect in piezoelectric/ferromagnet heterostructures holds promise for ultra-low energy information storage technologies. Epitaxial galfenol, an alloy of iron and gallium, has been shown to be a highly suitable material for such devices because it possesses biaxial anisotropy and large magnetostriction. Here we experimentally investigate the properties of galfenol/spacer/galfenol structures in which the compositions of the galfenol layers are varied in order to produce different strengths of the magnetic anisotropy and magnetostriction constants. Based upon these layers, we propose and simulate the operation of an information storage device that can operate as an energy efficient multilevel memory cell.

New design for inertial piezoelectric motors

We have designed, implemented, and tested a novel inertial piezoelectric motor (IPM) that is the first IPM to have controllable total friction force, which means that it sticks with large total friction forces and slips with severely reduced total friction forces. This allows the IPM to work with greater robustness and produce a larger output force at a lower threshold voltage while also providing higher rigidity. This is a new IPM design that means that the total friction force can be dramatically reduced or even canceled where necessary by pushing the clamping points at the ends of a piezoelectric tube that contains the sliding shaft inside it in the opposite directions during piezoelectric deformation. Therefore, when the shaft is propelled forward by another exterior piezoelectric tube, the inner piezoelectric tube can deform to reduce the total friction force acting on the shaft instantly and cause more effective stepping movement of the shaft. While our new IPM requires the addition of another piezoelectric tube, which leads to an increase in volume of 120% when compared with traditional IPMs, the average step size has increased by more than 400% and the threshold voltage has decreased by more than 50 V. The improvement in performance is far more significant than the increase in volume. This enhanced performance will allow the proposed IPM to work under large load conditions where a simple and powerful piezoelectric motor is needed.

A two-dimensional Fe-doped SnS2 magnetic semiconductor

Magnetic two-dimensional materials have attracted considerable attention for their significant potential application in spintronics. In this study, we present a high-quality Fe-doped SnS₂ monolayer exfoliated using a micromechanical cleavage method. Fe atoms were doped at the Sn atom sites, and the Fe contents are ∼2.1%, 1.5%, and 1.1%. The field-effect transistors based on the Fe_0.021Sn_0.979S₂ monolayer show n-type behavior and exhibit high optoelectronic performance. Magnetic measurements show that pure SnS₂ is diamagnetic, whereas Fe_0.021Sn_0.979S₂ exhibits ferromagnetic behavior with a perpendicular anisotropy at 2 K and a Curie temperature of ~31 K. Density functional theory calculations show that long-range ferromagnetic ordering in the Fe-doped SnS₂ monolayer is energetically stable, and the estimated Curie temperature agrees well with the results of our experiment. The results suggest that Fe-doped SnS₂ has significant potential in future nanoelectronic, magnetic, and optoelectronic applications.

Non-volatile logic gates based on planar Hall effect in magnetic films with two in-plane easy axes

We discuss the use of planar Hall effect (PHE) in a ferromagnetic GaMnAs film with two in-plane easy axes as a means for achieving novel logic functionalities. We show that the switching of magnetization between the easy axes in a GaMnAs film depends strongly on the magnitude of the current flowing through the film due to thermal effects that modify its magnetic anisotropy. Planar Hall resistance in a GaMnAs film with two in-plane easy axes shows well-defined maxima and minima that can serve as two binary logic states. By choosing appropriate magnitudes of the input current for the GaMnAs Hall device, magnetic logic functions can then be achieved. Specifically, non-volatile logic functionalities such as AND, OR, NAND, and NOR gates can be obtained in such a device by selecting appropriate initial conditions. These results, involving a simple PHE device, hold promise for realizing programmable logic elements in magnetic electronics.