Bipolar and Unipolar Silylene-Diphenylene σ-π Conjugated Polymer Route for Highly Efficient Electrophosphorescence

Creation of Dual Thermally Activated Delayed-Fluorescence Exciplexes in a Bulk Emitting Layer and Its Interface with an Electron Transport Layer for Promoting the Performance of Thermally Activated Delayed-Fluorescence Organic Light-Emitting Diodes Fabricated by a Solution Process

An exciplex, which is composed of electron donor and acceptor molecules and formed by intermolecular charge transfer, is an excited-state species that is able to emit light or transfer its energy to a lower-energy emitter. In reported exciplex-based organic light-emitting diodes (OLEDs), their working mechanism is to generate exciplexes either in the bulk emitting layer (bulk exciplex) or at its interface with an electron transport layer (interface exciplex); both types give promising device performance. Here, we propose a novel strategy of creating both types of exciplexes simultaneously (dual exciplexes) for the generation of more exciplexes for better device performance as indicated in the improved photoluminescence quantum yield (PLQY). Impressively, the dual exciplex-based device with blue thermally activated delayed fluorescence (TADF) emitter 9,9-dimethyl-9,10-dihydroacridine-2,4,6-triphenyl-1,3,5-triazine (DMAC-TRZ) exhibits a record-high maximum external quantum efficiency (EQE_max) of 26.7% among the solution-processed TADF blue OLEDs. By further doping with the red-emitting phosphor emitter into the EML, the white device also gives a record-high EQE_max of 24.1% among the solution-processed TADF-phosphor hybrid white OLEDs (T-P WOLEDs) with the Commission Internationale de L'Eclairage (CIE) coordinates of (0.34, 0.42), color rendering index of 70, and correlated color temperature of 5198 K. Furthermore, both blue and white devices show an ultralow efficiency roll-off with external quantum efficiencies at a practical brightness value of 1000 cd m^-2 (EQE₁₀₀₀) of 25.1 and 23.9%, respectively. This is the first report of employing a dual exciplex-based OLED with excellent device performance.

Poly(acridan-grafted biphenyl germanium) with High Triplet Energy as a Universal Host for High-Efficiency Thermally Activated Delayed Fluorescence Full-Color Devices and Their Hybrid with Phosphor for White Light Electroluminescence

Developing an effective host for highly efficient full-color electroluminescence devices through a solution-process is still a challenge at present. Here, we use the σ-π conjugated polymer, poly(acridan grafted biphenyl germanium) P(DMAC-Ge), having the highest triplet energy (E_T) 2.86 eV among conjugated polymers as the host in sky-blue phosphorescence, TADFs (blue (B), green (G), and red (R)), and hybrid white (W) PLEDs. Upon doping with a sky-blue phosphor-emitter (Firpic), the resulting device gives the high EQE_max 19.7% with B_max 24,918 cd/m². The Ge-containing polymer backbone can provide as a channel for electron transport and charge trap into the guest as manifested by the electroluminescence dynamics. Further introducing the bipolar material DCzPPy as cohost, the devices with a sky-blue phosphor (Firpic) and each of the TADF-guests─B (DMAC-TRZ), G (DACT-II), and R (TPA-DCPP) in the EML─achieve the high maximum EQEs as 19.7%, 19.4%, 21.5% and 3.82% with the emission peaks at 470, 485, 508, and 630 nm, respectively. As the three guests (DMAC-TRZ, Ir-O, Ir-R) are doped together into the emitting layer, we obtain a TADF-phosphor (T-P) hybrid white PLED giving a record-high EQE 22.5% among the solution processed hybrid OLED with CIE (0.34, 0.40) and B_max 28,945 cd/m². These results manifest that P(DMAC-Ge) is a potential polymer host for full-color TADF and hybrid white light PLEDs with high performance.

Optoelectronic Properties of High Triplet σ-π-Conjugated Poly[(biphenyl group IV-A atom (C, Si, Ge, Sn)] Backbones

A series of σ-π-conjugated polymers composed of biphenyl and X atom as backbone repeat unit (where X is the group IV-A atom: carbon, silicon, germanium, or tin) grafted with two alkoxy-substituted biphenyls at the X atom as side chains are synthesized and their optoelectronic properties are studied systematically. We choose biphenyl rather than alkyl as the side chain because its frontier molecular orbital distributions are close to those of our previously reported σ-π-conjugated polymer grafted with transport moieties. The present σ-π polymers with various X atoms show significant differences in triplet energy (E_T) ranging from 2.58 to 2.83 eV with the sequence Ge > Si > C > Sn and in charge mobilities from 10^-9 to 10^-7 cm²/(V s) with the sequence Si > Ge > Sn > C, indicating that the properties of the σ-π polymers are largely affected by their X atoms. The Ge- and Sn-based σ-π-conjugated polymers show the highest and lowest E_T values, respectively, due to their different levels of π-electron delocalization caused by size effects and (d-p)π orbital interaction. For their charge transport properties, the Si-based conjugated σ-π polymer gives the highest hole and electron mobilities due to the stronger σ-π conjugation and shorter Si-C bond length between the attached carbon atom in biphenyl and Si. On the contrary, the C-based σ-π-conjugated polymer gives the lowest charge mobilities due to a lack of d orbital in the C atom leading to a poor σ-π conjugation characteristic. These σ-π polymers with different E_T levels and charge transport properties show a significant effect on their electroluminescence characteristics. Among them, the Ge-based σ-π-conjugated polymer when used as host shows the best device performance due to its higher E_T and reasonable charge mobility. Such findings of different optoelectronic properties of these σ-π-conjugated polymers provide useful guidelines for the selection of backbone for designing σ-π-conjugated polymer host grafted with charge transport moieties.