Bevel Structure Based XPS Analysis as a Non-Destructive Chemical Probe for Complex Interfacial Structures of Organic Semiconductors

The bevel structure of organic multilayers produced by finely controlled Ar gas cluster ion beam sputtering preserves both the molecular distribution and chemical states. Nevertheless, there is still an important question of whether this method can be applicable to organic multilayer structures composed of complex or ambiguous interfaces used in real organic optoelectronic devices. Herein, various bevel structures are fabricated from different types of organic semiconductors using a solution-based deposition technique: complicatedly intermixed electron-donor and electron-acceptor bulk heterojunction structure, thin film structure with an internal donor-acceptor concentration gradient, and multi-layered structure with more than three layers. For these organic material combinations listed above, the bevel structure is fabricated with finely tuned Ar gas cluster ion beam sputtering. The location-dependent X-ray photoelectron spectroscopy (XPS) results obtained for each bevel structure exactly correspond to the XPS depth profiles. This result demonstrates that the bevel structure analysis is a powerful method to distinguish subtle differences in chemical component distributions and chemical states of organic semiconductors even with complex or ambiguous interfaces. Ultimately, due to its reliability as verified by this study, the proposed bevel structure analysis is expected to greatly expand other analytical techniques with a limited spatial or depth resolution.

Fabrication of Two-Dimensional Crystalline Organic Films by Tilted Spin Coating for High-Performance Organic Field-Effect Transistors

We developed a facile method for fabricating large-area, two-dimensional (2D), organic, highly crystalline films and extended it to organic thin-film transistor arrays. Tilted spinning provided oriented flow at the three-phase contact line, and a 2D crystalline film that consisted of layer-by-layer stacked 2,7-diocty[1]benzothieno[3,2- b]benzothiophene (C₈-BTBT) was obtained facilely for organic thin-film transistors (OTFTs). The extracted field-effect mobility is 4.6 cm² V^-1 s^-1, but with nonideal features. By applying this method to microdroplet arrays, an oriented crystal was fabricated, and the channel region for OTFTs was covered by adjusting the spinning speed. By tuning the tilt angle (θ) of the revolving substrate, we fabricated high-performance OTFT arrays with average and maximum mobilities of 7.5 and 10.1 cm² V^-1 s^-1, respectively, which exhibited high reliability factors of over 90% and were close to that of ideal transistors. These results suggest that high-quality crystalline films can be obtained via a facile tilted-spinning method.

Fully rubbery integrated electronics from high effective mobility intrinsically stretchable semiconductors

An intrinsically stretchable rubbery semiconductor with high mobility is critical to the realization of high-performance stretchable electronics and integrated devices for many applications where large mechanical deformation or stretching is involved. Here, we report fully rubbery integrated electronics from a rubbery semiconductor with a high effective mobility, obtained by introducing metallic carbon nanotubes into a rubbery semiconductor composite. This enhancement in effective carrier mobility is enabled by providing fast paths and, therefore, a shortened carrier transport distance. Transistors and their arrays fully based on intrinsically stretchable electronic materials were developed, and they retained electrical performances without substantial loss when subjected to 50% stretching. Fully rubbery integrated electronics and logic gates were developed, and they also functioned reliably upon mechanical stretching. A rubbery active matrix based elastic tactile sensing skin to map physical touch was demonstrated to illustrate one of the applications.

Intrinsically ionic conductive cellulose nanopapers applied as all solid dielectrics for low voltage organic transistors

Biodegradability, low-voltage operation, and flexibility are important trends for the future organic electronics. High-capacitance dielectrics are essential for low-voltage organic field-effect transistors. Here we report the application of environmental-friendly cellulose nanopapers as high-capacitance dielectrics with intrinsic ionic conductivity. Different with the previously reported liquid/electrolyte-gated dielectrics, cellulose nanopapers can be applied as all-solid dielectrics without any liquid or gel. Organic field-effect transistors fabricated with cellulose nanopaper dielectrics exhibit good transistor performances under operation voltage below 2 V, and no discernible drain current change is observed when the device is under bending with radius down to 1 mm. Interesting properties of the cellulose nanopapers, such as ionic conductivity, ultra-smooth surface (~0.59 nm), high transparency (above 80%) and flexibility make them excellent candidates as high-capacitance dielectrics for flexible, transparent and low-voltage electronics.

Next-generation organic electronics require flexible organic field effect transistors that show low-voltage operation and are biodegradable. Here, Huang and co-workers demonstrate high-performance transistors that utilize solid-state ionic conductive cellulose nanopaper as the dielectric.

Interface Engineering for Controlling Device Properties of Organic Antiambipolar Transistors

The main purpose of this study is to establish a guideline for controlling the device properties of organic antiambipolar transistors. Our key strategy is to use interface engineering to promote carrier injection at channel/electrode interfaces and carrier accumulation at a channel/dielectric interface. The effective use of carrier injection interlayers and an insulator layer with a high dielectric constant (high-k) enabled the fine tuning of device parameters and, in particular, the onset (V_on) and offset (V_off) voltages. A well-matched combination of the interlayers and a high-k dielectric layer achieved a low peak voltage (0.25 V) and a narrow on-state bias range (2.2 V), indicating that organic antiambipolar transistors have high potential as negative differential resistance devices for multivalued logic circuits.

Direct characterization of graphene doping state by in situ photoemission spectroscopy with Ar gas cluster ion beam sputtering

On the basis of an in situ photoemission spectroscopy (PES) system, we propose a novel, direct diagnosis method for the characterization of graphene (Gr) doping states at organic semiconductor (OSC)/electrode interfaces. Our in situ PES system enables ultraviolet/X-ray photoelectron spectroscopy (UPS/XPS) measurements during the OSC growth or removal process. We directly deposit C₆₀ films on three different p-type dopants-gold chloride (AuCl₃), (trifluoromethyl-sulfonyl)imide (TFSI), and nitric acid (HNO₃). We periodically characterize the chemical/electronic state changes of the C₆₀/Gr structures during their aging processes under ambient conditions. Depositing the OSC on the p-type doped Gr also prevents severe degradation of the electrical properties, with almost negligible transition over one month, while the p-type doped Gr without an OSC changes a lot following one month of aging. Our results indicate that the chemical/electronic structures of the Gr layer are completely reflected in the energy level alignments at the C₆₀/Gr interfaces. Therefore, we strongly believe that the variation of energy level alignments at the OSC/graphene interface is a key standard for determining the doping state of graphene after a certain period of aging.

Doped Organic Transistors

Organic field-effect transistors hold the promise of enabling low-cost and flexible electronics. Following its success in organic optoelectronics, the organic doping technology is also used increasingly in organic field-effect transistors. Doping not only increases device performance, but it also provides a way to fine-control the transistor behavior, to develop new transistor concepts, and even improve the stability of organic transistors. This Review summarizes the latest progress made in the understanding of the doping technology and its application to organic transistors. It presents the most successful doping models and an overview of the wide variety of materials used as dopants. Further, the influence of doping on charge transport in the most relevant polycrystalline organic semiconductors is reviewed, and a concise overview on the influence of doping on transistor behavior and performance is given. In particular, recent progress in the understanding of contact doping and channel doping is summarized.

Nanoscale Chemical and Electrical Stabilities of Graphene-covered Silver Nanowire Networks for Transparent Conducting Electrodes

The hybrid structure of Ag nanowires (AgNWs) covered with graphene (Gr) shows synergetic effects on the performance of transparent conducting electrodes (TCEs). However, these effects have been mainly observed via large-scale characterization, and precise analysis at the nanoscale level remains inadequate. Here, we present the nanoscale verification and visualization of the improved chemical and electrical stabilities of Gr-covered AgNW networks using conductive atomic force microscopy (C-AFM), Auger electron spectroscopy (AES), and X-ray photoelectron spectroscopy (XPS) combined with the gas cluster ion beam (GCIB) sputtering technique. Specifically by transferring island Gr on top of the AgNW network, we were able to create samples in which both covered and uncovered AgNWs are simultaneously accessible to various surface-characterization techniques. Furthermore, our ab initio molecular dynamics (AIMD) simulation elucidated the specific mechanistic pathway and a strong propensity for AgNW sulfidation, even in the presence of ambient oxidant gases.

Direct characterization of the energy level alignments and molecular components in an organic hetero-junction by integrated photoemission spectroscopy and reflection electron energy loss spectroscopy analysis

A novel, direct method for the characterization of the energy level alignments at bulk-heterojunction (BHJ)/electrode interfaces on the basis of electronic spectroscopy measurements is proposed. The home-made in situ photoemission system is used to perform x-ray/ultraviolet photoemission spectroscopy (XPS/UPS), reflection electron energy loss spectroscopy (REELS) and inverse photoemission spectroscopy of organic-semiconductors (OSCs) deposited onto a Au substrate. Through this analysis system, we are able to obtain the electronic structures of a boron subphthalocyanine chloride:fullerene (SubPC:C60) BHJ and those of the separate OSC/electrode structures (SubPC/Au and C60/Au). Morphology and chemical composition analyses confirm that the original SubPC and C60 electronic structures remain unchanged in the electrodes prepared. Using this technique, we ascertain that the position and area of the nearest peak to the Fermi energy (EF = 0 eV) in the UPS (REELS) spectra of SubPC:C60 BHJ provide information on the highest occupied molecular orbital level (optical band gap) and combination ratio of the materials, respectively. Thus, extracting the adjusted spectrum from the corresponding SubPC:C60 BHJ UPS (REELS) spectrum reveals its electronic structure, equivalent to that of the C60 materials. This novel analytical approach allows complete energy-level determination for each combination ratio by separating its electronic structure information from the BHJ spectrum.

Study on the disparate transition behaviors of the electrical/physical properties in PEDOT:PSS film depending on solvent species under a follow-up solution-treatment process

In most solution-processed organic devices, a poly(3,4-ethylenedioxythiophene) (PEDOT) polymerized with poly(4-styrenesulfonate) (PSS) film is inevitably affected by various conditions during the subsequent solution-coating processes. To investigate the effects of direct solvent exposure on the properties of PEDOT polymerized with PSS (PEDOT:PSS) films, photoemission spectroscopy-based analytical methods were used before and after solvent-coating processes. Our results clearly indicate that

PEDOT

PSS films undergo a different transition mechanism depending on the solubility of the solvent in water. The water-miscible solvents induce the solvation of hydrophilic PSS chains. As a result, this process allows the solvent to diffuse into the

PEDOT

PSS film, and a conformational change between PEDOT and PSS occurs. On the other hand, the water-immiscible organic solvents cause the partial adsorption of solvent molecules at the PE surface, which leads to changes in the surface properties, including work function. Based on our finding, we demonstrate that the energy-level alignments at the organic semiconductor/electrode interface for the

PEDOT

PSS films can be controlled by simple solvent treatments.

Direct analytical method of contact position effects on the energy-level alignments at organic semiconductor/electrode interfaces using photoemission spectroscopy combined with Ar gas cluster ion beam sputtering

Poly(3, 4-ethylenedioxythiophene) (PEDOT) polymerized with poly(4-styrenesulfonate) (PSS) is one of the most widely used conducting organic electrodes owing to its outstanding optical/electrical properties and high work function. Because its work function depends significantly on the molecular arrangements between PEDOT and PSS molecules on the surface, the contact position of

PEDOT

PSS films on organic semiconductors (OSCs) must also be an essential consideration. However, existing analysis methods based on in situ deposition/analysis are limited in their ability to accurately investigate the electronic structures of the buried interface regions under the solution-processed electrode or OSC layer in organic devices. Therefore, to overcome such limitations, we propose a top-down method based on photoemission spectroscopy analysis combined with Ar gas cluster ion beam (GCIB) sputtering. Through this method, both energy-level alignments and molecular distributions at various OSC/electrode interfaces can be successfully characterized without reference to any deposition process.

Superhydrophobic SAM Modified Electrodes for Enhanced Current Limiting Properties in Intrinsic Conducting Polymer Surge Protection Devices

Surface interface engineering using superhydrophobic gold electrodes made with 1-dodecanethiol self-assembled monolayer (SAM) has been used to enhance the current limiting properties of novel surge protection devices based on the intrinsic conducting polymer, polyaniline doped with methanesulfonic acid. The resulting devices show significantly enhanced current limiting characteristics, including current saturation, foldback, and negative differential effects. We show how SAM modification changes the morphology of the polymer film directly adjacent to the electrodes, leading to the formation of an interfacial compact thin film that lowers the contact resistance at the Au-polymer interface. We attribute the enhanced current limiting properties of the devices to a combination of lower contact resistance and increased Joule heating within this interface region which during a current surge produces a current blocking resistive barrier due to a thermally induced dedoping effect caused by the rapid diffusion of moisture away from this region. The effect is exacerbated at higher applied voltages as the higher temperature leads to stronger depletion of charge carriers in this region, resulting in a negative differential resistance effect.

Controlling charge injection properties in polymer field-effect transistors by incorporation of solution processed molybdenum trioxide

A simply synthesized MoO₃ is used as charge injection layers for printed p-type organic field-effect transistors (OFETs).

Probing the persistence of energy-level control effects at organic semiconductor/electrode interfaces based on photoemission spectroscopy combined with Ar gas cluster ion beam sputtering

Thein situPES – Ar GCIB sputtering combined analysis enable to characterize the persistence of controlled energy-level at organic semiconductor/electrode interfaces.

Efficient charge injection in p-type polymer field-effect transistors with low-cost molybdenum electrodes through V2O5 interlayer

Here we report high-performance polymer OFETs with a low-cost Mo source/drain electrode by efficient charge injection through the formation of a thermally deposited V2O5 thin film interlayer. A thermally deposited V2O5 interlayer is formed between a regioregular poly(3-hexylthiophene) (rr-P3HT) or a p-type polymer semiconductor containing dodecyl-substituted thienylenevinylene (TV) and dodecylthiophene (PC12TV12T) and the Mo source/drain electrode. The P3HT or PC12TV12T OFETs with the bare Mo electrode exhibited lower charge carrier mobility than those with Au owing to a large barrier height for hole injection (0.5-1.0 eV). By forming the V2O5 layer, the P3HT or PC12TV12T OFETs with V2O5 on the Mo electrode exhibited charge carrier mobility comparable to that of a pristine Au electrode. Best P3HT or PC12TV12T OFETs with 5 nm thick V2O5 on Mo electrode show the charge carrier mobility of 0.12 and 0.38 cm(2)/(V s), respectively. Ultraviolet photoelectron spectroscopy results exhibited the work-function of the Mo electrode progressively changed from 4.3 to 4.9 eV with an increase in V2O5 thickness from 0 to 5 nm, respectively. Interestingly, the V2O5-deposited Mo exhibits comparable Rc to Au, which mainly results from the decreased barrier height for hole carrier injection from the low-cost metal electrode to the frontier molecular orbital of the p-type polymer semiconductor after the incorporation of the transition metal oxide hole injection layer, such as V2O5. This enables the development of large-area, low-cost electronics with the Mo electrodes and V2O5 interlayer.

Low-voltage bendable pentacene thin-film transistor with stainless steel substrate and polystyrene-coated hafnium silicate dielectric

The hafnium silicate and aluminum oxide high-k dielectrics were deposited on stainless steel substrate using atomic layer deposition process and octadecyltrichlorosilane (OTS) and polystyrene (PS) were treated improve crystallinity of pentacene grown on them. Besides, the effects of the pentacene deposition condition on the morphologies, crystallinities and electrical properties of pentacene were characterized. Therefore, the surface treatment condition on dielectric and pentacene deposition conditions were optimized. The pentacene grown on polystyrene coated high-k dielectric at low deposition rate and temperature (0.2-0.3 Å/s and R.T.) showed the largest grain size (0.8-1.0 μm) and highest crystallinity among pentacenes deposited various deposition conditions, and the pentacene TFT with polystyrene coated high-k dielectric showed excellent device-performance. To decrease threshold voltage of pentacene TFT, the polystyrene-thickness on high-k dielectric was controlled using different concentration of polystyrene solution. As the polystyrene-thickness on hafnium silicate decreases, the dielectric constant of polystyrene/hafnium silicate increases, while the crystallinity of pentacene grown on polystyrene/hafnium silicate did not change. Using low-thickness polystyrene coated hafnium silicate dielectric, the high-performance and low voltage operating (<5 V) pentacene thin film transistor (μ: ~2 cm(2)/(V s), on/off ratio, >1 × 10(4)) and complementary inverter (DC gains, ~20) could be fabricated.

Composite films of oxidized multiwall carbon nanotube and poly(3,4-ethylenedioxythiophene): polystyrene sulfonate (PEDOT:PSS) as a contact electrode for transistor and inverter devices

Composite films of multiwall carbon nanotube (MWNT)/poly(3,4-ethylenedioxythiophene) polymerized with poly(4-styrenesulfonate) (PEDOT:PSS) were prepared by spin-coating a mixture solution. The effect of the MWNT loading and the MWNT oxidation, with acid solution or ultraviolet (UV)-ozone treatment, on the film properties such as surface roughness, work function, surface energy, optical transparency and conductivity were studied. Also pentacene thin film transistors and inverters were made with these composite films as a contact metal and the device characteristics were measured. The oxidation of MWNT reduced the conductivity of MWNT/PEDOT:PSS composite film but increased the work function and transparency. UV-ozone treated MWNT/PEDOT:PSS composite film showed higher conductivity (14000 Ω/□) and work function (4.9 eV) than acid-oxidized MWNT/PEDOT:PSS composite film and showed better performance as a source/drain electrode in organic thin film transistor (OTFT) than other types of MWNT/PEDOT:PSS composite films. Hole injection barrier of the UV-ozone treated MWNT/PEDOT:PSS composite film with pentacene was significantly lower than any other films because of the higher work function.

Electroless silver plating of the surface of organic semiconductors

The integration of nanoscale processes and devices demands fabrication routes involving rapid, cost-effective steps, preferably carried out under ambient conditions. The realization of the metal/organic semiconductor interface is one of the most demanding steps of device fabrication, since it requires mechanical and/or thermal treatments which increment costs and are often harmful in respect to the active layer. Here, we provide a microscopic analysis of a room temperature, electroless process aimed at the deposition of a nanostructured metallic silver layer with controlled coverage atop the surface of single crystals and thin films of organic semiconductors. This process relies on the reaction of aqueous AgF solutions with the nonwettable crystalline surface of donor-type organic semiconductors. It is observed that the formation of a uniform layer of silver nanoparticles can be accomplished within 20 min contact time. The electrical characterization of two-terminal devices performed before and after the aforementioned treatment shows that the metal deposition process is associated with a redox reaction causing the p-doping of the semiconductor.

Independently driven four-probe method for local electrical characteristics in organic thin-film transistors under controlled channel potential

We describe an independently driven four-probe method to investigate local channel mobility in organic field-effect transistors (OFETs). In OFET devices, probe-organic contact resistance affects device characteristics even in four-probe measurement because a change in contact resistance at the source probe induces a change in channel potential, resulting in different local carrier density. To overcome this problem, we introduced a feedback circuit between the source probe and a channel voltage probe to keep the channel potential constant. We demonstrate four-probe I-V measurement on a pentacene thin film (50 nm thick) under controlled channel potential. The feedback successfully enables us to separate contact resistance and channel resistance even under different contact conditions. We also measured four-probe resistance as a function of gate bias and channel probe position. The present results were in good agreement with two-dimensional model calculation by arranging four probes in a defect-free area; the mobility of the pentacene single grain was evaluated to be 0.25 cm(2)/(V s).

Multiwall carbon nanotube and poly(3,4-ethylenedioxythiophene): polystyrene sulfonate (PEDOT:PSS) composite films for transistor and inverter devices

Highly conductive multiwalled carbon nanotube (MWNT)/Poly(3,4-ethylenedioxythiophene) polymerized with poly(4-styrenesulfonate) (PEDOT:PSS) films were prepared by spin coating a mixture solution. The solution was prepared by dispersing MWNT in the PEDOT:PSS solution in water using ultrasonication without any oxidation process. The effect of the MWNT loading in the solution on the film properties such as surface roughness, work function, surface energy, optical transparency, and conductivity was studied. The conductivity of MWNT/PEDOT:PSS composite film was increased with higher MWNT loading and the high conductivity of MWNT/PEDOT:PSS films enabled them to be used as a source/drain electrode in organic thin film transistor (OTFT). The pentacene TFT with MWNT/PEDOT:PSS S/D electrode showed much higher performance with mobility about 0.2 cm²/(V s) and on/off ratio about 5 × 10⁵ compared to that with PEDOT:PSS S/D electrode (∼0.05 cm²/(V s), 1 × 10⁵). The complementary inverters exhibited excellent characteristics, including high gain value of about 30.